CN110246791B - Wafer conveying device, equipment and method for removing impurities - Google Patents
Wafer conveying device, equipment and method for removing impurities Download PDFInfo
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- CN110246791B CN110246791B CN201910420062.0A CN201910420062A CN110246791B CN 110246791 B CN110246791 B CN 110246791B CN 201910420062 A CN201910420062 A CN 201910420062A CN 110246791 B CN110246791 B CN 110246791B
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- supporting rod
- air inlet
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- airflow
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- 239000012535 impurity Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 36
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000005086 pumping Methods 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 238000010248 power generation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000013618 particulate matter Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 68
- 239000007789 gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer conveying device, impurity removing equipment and an impurity removing method, which are used for cleaning particles on the surface of a wafer, wherein the impurity removing equipment comprises a wafer conveying device and an airflow supply device; the wafer transfer device includes: the first supporting plate and the second supporting plate are connected through a plurality of supporting rods; the interior of each supporting rod is of a hollow structure, one end of each supporting rod is provided with an air inlet, and the air inlet is used for introducing an air flow; each bracing piece includes: and the exhaust holes are uniformly distributed on one surface of the supporting rod facing the interior of the wafer conveying device. The technical scheme of the invention has the beneficial effects that: through improving wafer transmission device's structure, at the in-process of conveying the wafer, get rid of the particulate matter on wafer surface to the yield of wafer has been improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer conveying device, impurity removing equipment and an impurity removing method.
Background
In semiconductor manufacturing technology, particle on wafer (hereinafter referred to as PA) is an important factor in considering wafer quality, and the Particle directly affects the performance of the wafer, so that it is very critical to control PA.
In furnace manufacturing, a wafer transfer apparatus is often required for transferring and processing wafers, and the wafer carrying tool is called a boat. Since the boat is in direct contact with the wafer during the manufacturing process, if the boat itself has PA, the PA condition of the wafer is directly affected during the contact friction with the wafer. However, if we can fully utilize the structural characteristics of the boat, not only the PA caused by the boat's own condition can be improved, but also the PA caused by other reasons, such as the PA dropped by the conveying apparatus, the PA sprayed from the gas inlet pipe, the oxide layer peeled off from the inner wall of the furnace tube, etc., can be solved. Therefore, a wafer boat with a novel structure is needed, which can effectively remove particles on the surface of the wafer and further improve the yield of the wafer.
Disclosure of Invention
In view of the above problems in the prior art, a wafer transfer apparatus, an apparatus for removing impurities, and a method for removing impurities are provided.
The specific technical scheme is as follows:
the present invention includes a wafer transfer apparatus comprising:
the first supporting plate and the second supporting plate are connected through a plurality of supporting rods;
the interior of each supporting rod is of a hollow structure, one end of each supporting rod is provided with an air inlet, and the air inlet is used for introducing an air flow;
each of the support rods includes:
and the exhaust holes are uniformly distributed on one surface of the supporting rod facing the interior of the wafer conveying device.
Preferably, each support rod further comprises a plurality of slots for bearing wafers, and each slot is correspondingly arranged right below one exhaust hole.
Preferably, the inner diameter of the support rod is 1/10 of the diameter of the support rod.
Preferably, the exhaust hole is square, and the side length of the square is equal to the inner diameter of the support rod.
Preferably, the gas stream is a nitrogen stream.
The invention comprises an apparatus for removing impurities, which is used for cleaning particles on the surface of a wafer, and comprises a wafer conveying device and also comprises:
and the air flow supply device is respectively connected with each air inlet and is used for supplying the air flow to carry away the particles on the surface of the wafer.
Preferably, the apparatus further comprises:
the wafer conveying device is arranged in the cavity;
the air pump is arranged at the air outlet of the cavity and used for pumping the air flow out of the cavity;
and the collecting device is connected with the air suction pump and is used for collecting the particulate matters carried in the air flow pumped by the air suction pump.
The invention comprises a method for removing impurities, comprising the following steps:
step S1, in a first preset time, introducing airflow at a first wind speed into an air inlet of a first supporting rod, and simultaneously introducing airflow at a second wind speed into an air inlet of a second supporting rod and an air inlet of a third supporting rod;
s2, in a second preset time, introducing airflow at a first wind speed into the air inlet of the second supporting rod, and simultaneously introducing airflow at a second wind speed into the air inlet of the first supporting rod and the air inlet of the third supporting rod;
and S3, in a third preset time, introducing airflow at a first wind speed into the air inlet of the third supporting rod, and simultaneously introducing airflow at a second wind speed into the air inlet of the first supporting rod and the air inlet of the second supporting rod.
Preferably, the first preset time, the second preset time and the third preset time are equal.
Preferably, the first wind speed is greater than the second wind speed.
The technical scheme of the invention has the beneficial effects that: through improving wafer transmission device's structure, at the in-process of conveying the wafer, get rid of the particulate matter on wafer surface to the yield of wafer has been improved.
Drawings
Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings. The drawings are, however, to be regarded as illustrative and explanatory only and are not restrictive of the scope of the invention.
FIG. 1 is a schematic structural diagram of a wafer transfer apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a support rod according to an embodiment of the present invention;
FIG. 3 is a schematic structural view of an apparatus for removing impurities according to an embodiment of the present invention;
FIG. 4 is a flow chart illustrating steps of a method for removing impurities in an embodiment of the present invention;
fig. 5 is a schematic view of the direction of the airflow in the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive efforts based on the embodiments of the present invention, shall fall within the scope of protection of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
A first embodiment of the present invention provides a wafer transfer apparatus 1, as shown in fig. 1, including:
the first support plate 11 and the second support plate 12 are connected by a plurality of support rods 10;
the interior of each support rod 10 is a hollow structure, and one end of each support rod 10 is provided with an air inlet 101 for introducing an air flow;
as shown in fig. 2, each of the support rods 10 includes:
a plurality of exhaust holes 102 uniformly distributed on a surface of the support rod 10 facing the interior of the wafer transfer device;
a plurality of slots 103 for carrying wafers, each slot 103 being disposed right below an exhaust hole 102;
the inner diameter of the support rod 10 is 1/10 of the diameter of the support rod 10;
the exhaust holes 102 are square, and the side length of the square is equal to the inner diameter of the support rod 10.
Specifically, particles (PA) on a wafer (wafer) are an important factor in considering the wafer quality, and directly affect the wafer performance, so it is very critical to control the particles on the wafer. In semiconductor manufacturing technology, it is often necessary to use a wafer transfer apparatus 1 to transfer and process wafers, and the wafer transfer apparatus 1 in the embodiment of the present invention is a Boat (Boat). Generally, the wafer transfer apparatus 1 has two materials, one is Quartz (Quartz) and the other is silicon carbide (SiC).
Specifically, since the wafer is directly contacted with the wafer transfer device 1 during the manufacturing process, if the wafer transfer device 1 itself has PA, the PA condition of the wafer can be directly influenced during the contact friction with the wafer. However, if we can fully utilize the structural characteristics of the wafer transfer apparatus 1, not only the PA due to the self condition of the wafer transfer apparatus 1 can be improved, but also the PA due to other reasons can be solved.
In the present embodiment, the structure of the wafer conveying device 1, i.e. the wafer boat, is modified, and the wafer conveying device 1 includes three support rods 10 (Rod), which are defined as a first support Rod, a second support Rod, and a third support Rod, respectively, for convenience of description. Each support rod 10 is designed to be hollow, each support rod 10 is provided with an air inlet 101 arranged at one end connected with the second support plate 12, and an air outlet 102 is arranged right above each Slot 103 (Slot) for bearing a wafer.
Specifically, nitrogen flow is introduced from the air inlet 101 of the supporting rod 10, led out through the plurality of air exhaust holes 102, and taken away the PA on the wafer surface, and the nitrogen flow carrying the PA is pumped out by an air pump at the air exhaust port of the cavity and stored in a collection device (capture), and the PA captured in the collection device is cleaned periodically. In the present embodiment, the exhaust holes 102 are square to increase the contact area between the gas flow and the wafer, thereby enhancing the effect of cleaning the PA.
A second embodiment of the present invention provides an apparatus for removing impurities, which is used to clean particles on the surface of a wafer, and the apparatus includes the wafer transferring device in the first embodiment, as shown in fig. 3, and further includes:
an air flow supply device 2 respectively connected with the air inlet 101 of each support rod 10 and used for supplying air flow to carry away the particles on the surface of the wafer;
a chamber 3, wherein the chamber 3 comprises an exhaust port 30, and the wafer conveying device 1 is arranged in the chamber 3;
the air pump 4 is arranged at the air outlet 30 of the cavity 3 and is used for pumping air flow out of the cavity 3;
and the collecting device 5 is connected with the air suction pump 4 and is used for collecting the particles carried in the air flow pumped by the air suction pump 4.
Specifically, the gas flow supply device 2 is used to supply an inert gas, and nitrogen is used in this embodiment. After the wafer is conveyed into the cavity 3 by the wafer boat, nitrogen flows are respectively introduced to the three support rods 10 by the air flow supply device 2, the time for introducing the nitrogen flows to the support rods is divided into three sections, specifically, the three sections include a first preset time T1, a second preset time T2 and a third preset time T3, and the time lengths of the T1, the T2 and the T3 are equal. In a first preset time period, the wind speed in the first supporting rod is X, and the wind speeds in the second supporting rod and the third supporting rod are Y; in a second preset time period, the wind speed in the second supporting rod is X, and the wind speed in the first supporting rod and the third supporting rod is Y; and in a third preset time, the wind speed in the third supporting rod is X, and the wind speed in the first supporting rod and the second supporting rod is Y. In the above process, the wind speed X is greater than Y.
Specifically, each supporting rod 10 is provided with a slot 103 for bearing a wafer, an exhaust hole 102 is formed right above the slot 103, and after the above ventilation process, nitrogen is led out of the supporting rod 10 through the exhaust hole 102, and an air flow is formed on the surface of the wafer to take away PA on the wafer. The air flow carrying the PA is pumped away by the air pump 4 at the air outlet 30 of the chamber 3.
Further, after each preset time is finished, nitrogen flow carrying the PA is discharged out of the cavity 3 through the exhaust port 30 by the air pump 4 and collected in the collecting device 5, and the collecting device 5 is cleaned regularly to achieve the purpose of cleaning particles in the cavity.
A third embodiment of the present invention provides a method of removing impurities, as shown in fig. 4, including the steps of:
step S1, in a first preset time, introducing airflow at a first wind speed into an air inlet of a first supporting rod, and simultaneously introducing airflow at a second wind speed into an air inlet of a second supporting rod and an air inlet of a third supporting rod;
s2, in a second preset time, introducing airflow at a first wind speed into the air inlet of the second supporting rod, and simultaneously introducing airflow at a second wind speed into the air inlet of the first supporting rod and the air inlet of the third supporting rod;
and S3, in a third preset time, introducing airflow at a first wind speed into the air inlet of the third supporting rod, and simultaneously introducing airflow at a second wind speed into the air inlet of the first supporting rod and the air inlet of the second supporting rod.
Specifically, the time for ventilating the support rod is divided into three sections, specifically including a first preset time T1, a second preset time T2, and a third preset time T3. In a first preset time, the wind speed in the first supporting rod is X, and the wind speeds in the second supporting rod and the third supporting rod are Y; in the second preset time, the wind speed in the second support rod is X, the wind speed in the first support rod and the third support rod is Y, the wind speed in the third support rod is X, and the wind speed in the first support rod and the second support rod is Y.
Specifically, the first wind speed X is greater than the second wind speed Y. As shown in fig. 5, during the first preset time, since the wind speed of the airflow discharged from the first support rod 10a is the largest, the main direction of the airflow is A1; in the second preset time, since the wind speed of the airflow discharged from the second support bar 10b is the largest, the main direction of the airflow is A2; in the third preset time, since the wind speed of the airflow discharged from the third support bar 10c is the maximum, the main direction of the airflow is A3. Furthermore, the time lengths of T1, T2 and T3 are equal, namely the time for the air flow to contact with each part of the wafer is the same, so that the PA of each part of the wafer is completely cleaned, and the yield of the wafer is improved.
The technical scheme of the invention has the beneficial effects that: through improving wafer transmission device's structure, at the in-process of conveying the wafer, get rid of the particulate matter on wafer surface to the yield of wafer has been improved.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (6)
1. A wafer transfer apparatus, comprising:
the first supporting plate and the second supporting plate are connected through a plurality of supporting rods;
the interior of each supporting rod is of a hollow structure, one end of each supporting rod is provided with an air inlet, and the air inlet is used for introducing an air flow;
each of the support rods includes:
the exhaust holes are uniformly distributed on one surface of the supporting rod facing the interior of the wafer conveying device; the exhaust hole is square, and the side length of the square is equal to the inner diameter of the support rod;
the airflow is nitrogen airflow, and the airflow carries away particles on the surface of the wafer through the exhaust hole;
the wind power generation device comprises a first supporting rod, a second supporting rod and a third supporting rod, wherein airflow with a first wind speed is led into an air inlet of the first supporting rod within a first preset time, and airflow with a second wind speed is led into an air inlet of the second supporting rod and an air inlet of the third supporting rod; guiding the airflow at the first wind speed into the air inlet of the second supporting rod within a second preset time, and simultaneously guiding the airflow at the second wind speed into the air inlet of the first supporting rod and the air inlet of the third supporting rod; and in a third preset time, introducing airflow at the first wind speed into an air inlet of the third supporting rod, and simultaneously introducing airflow at the second wind speed into an air inlet of the first supporting rod and an air inlet of the second supporting rod, wherein the first wind speed is greater than the second wind speed.
2. The wafer transfer device of claim 1, wherein each of the support rods further comprises a plurality of slots for supporting a wafer, and each slot is disposed directly below one of the exhaust holes.
3. The wafer transfer device of claim 1, wherein the inner diameter of the support rod is 1/10 of the diameter of the support rod.
4. An apparatus for removing impurities, which is used for cleaning particles on the surface of a wafer, and is characterized by comprising the wafer conveying device as claimed in any one of claims 1 to 3, and further comprising:
the air flow supply device is connected with each air inlet respectively and used for supplying the air flow to take away the particles on the surface of the wafer, and the air flow supply device is used for ventilating the air inlets for a first preset time, a second preset time and a third preset time, wherein the first preset time, the second preset time and the third preset time are equal in duration;
in the first preset time, introducing airflow at a first wind speed into an air inlet of the first supporting rod, and simultaneously introducing the airflow at a second wind speed into an air inlet of the second supporting rod and an air inlet of the third supporting rod; guiding the airflow at the first wind speed into an air inlet of the second supporting rod within the second preset time, and simultaneously guiding the airflow at the second wind speed into an air inlet of the first supporting rod and an air inlet of the third supporting rod; and in the third preset time, introducing the airflow at the first wind speed into the air inlet of the third supporting rod, and simultaneously introducing the airflow at the second wind speed into the air inlets of the first supporting rod and the second supporting rod, wherein the first wind speed is greater than the second wind speed.
5. The apparatus of claim 4, further comprising:
the cavity comprises an exhaust port, and the wafer conveying device is arranged in the cavity;
the air pump is arranged at the air outlet of the cavity and used for pumping the air flow out of the cavity;
and the collecting device is connected with the air suction pump and is used for collecting the particulate matters carried in the air flow pumped by the air suction pump.
6. A method for removing impurities, applied to the apparatus as claimed in claim 4 or 5, comprising the steps of:
step S1, in a first preset time, introducing airflow at a first wind speed into an air inlet of a first supporting rod, and simultaneously introducing airflow at a second wind speed into an air inlet of a second supporting rod and an air inlet of a third supporting rod;
s2, in a second preset time, introducing airflow at a first wind speed into the air inlet of the second supporting rod, and simultaneously introducing airflow at a second wind speed into the air inlet of the first supporting rod and the air inlet of the third supporting rod;
s3, in a third preset time, introducing airflow at a first wind speed into an air inlet of a third supporting rod, and simultaneously introducing airflow at a second wind speed into the air inlet of the first supporting rod and the air inlet of the second supporting rod;
the first preset time, the second preset time and the third preset time are equal, and the first wind speed is greater than the second wind speed.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910420062.0A CN110246791B (en) | 2019-05-20 | 2019-05-20 | Wafer conveying device, equipment and method for removing impurities |
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| CN201910420062.0A CN110246791B (en) | 2019-05-20 | 2019-05-20 | Wafer conveying device, equipment and method for removing impurities |
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| CN110246791A CN110246791A (en) | 2019-09-17 |
| CN110246791B true CN110246791B (en) | 2022-10-28 |
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| USD908102S1 (en) | 2019-02-20 | 2021-01-19 | Veeco Instruments Inc. | Transportable semiconductor wafer rack |
| USD908103S1 (en) | 2019-02-20 | 2021-01-19 | Veeco Instruments Inc. | Transportable semiconductor wafer rack |
| CN114823445A (en) * | 2022-03-16 | 2022-07-29 | 东方晶源微电子科技（北京）有限公司 | Wafer transmission device, wafer pre-pumping device and rapid transmission piece system |
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| KR100290305B1 (en) * | 1999-06-04 | 2001-05-15 | 윤종용 | Boat for manufacturing semiconductor device and the process tube having its |
| CN106367805A (en) * | 2015-07-20 | 2017-02-01 | 株式会社Eugene科技 | Substrate processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100678475B1 (en) * | 2005-03-16 | 2007-02-02 | 삼성전자주식회사 | Wafer cleaning boat and storage having the same |
| TWI371076B (en) * | 2008-08-27 | 2012-08-21 | Gudeng Prec Industral Co Ltd | A wafer container with at least one supporting module having a long slot |
| KR101352555B1 (en) * | 2011-11-29 | 2014-01-16 | 우범제 | Wafer cassette having cleaning function |
| KR101439168B1 (en) * | 2012-09-19 | 2014-09-12 | 우범제 | A wafer treat equipment have the wafer purging cassette removal remain fume on the wafer |
| KR101432136B1 (en) * | 2013-02-14 | 2014-08-20 | 주식회사 싸이맥스 | Nitrogen gas injection device intergrated wafer stands |
| CN106409731B (en) * | 2016-11-09 | 2019-02-01 | 上海华力微电子有限公司 | A kind of nitrogen cooling system of boiler tube and the cooling means of wafer and cassette |
| CN107785255A (en) * | 2017-09-26 | 2018-03-09 | 合肥新汇成微电子有限公司 | A kind of temprature control method of semiconductor crystal wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100290305B1 (en) * | 1999-06-04 | 2001-05-15 | 윤종용 | Boat for manufacturing semiconductor device and the process tube having its |
| CN106367805A (en) * | 2015-07-20 | 2017-02-01 | 株式会社Eugene科技 | Substrate processing apparatus |
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