CN110224048A - A kind of ultraviolet LED epitaxial structure - Google Patents
A kind of ultraviolet LED epitaxial structure Download PDFInfo
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- CN110224048A CN110224048A CN201910401361.XA CN201910401361A CN110224048A CN 110224048 A CN110224048 A CN 110224048A CN 201910401361 A CN201910401361 A CN 201910401361A CN 110224048 A CN110224048 A CN 110224048A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a kind of ultraviolet LED epitaxial structures.This ultraviolet LED epitaxial structure includes the substrate set gradually from bottom to top, buffer layer, N-shaped AlGaN layer, multiquantum well region, composite construction area and p-type GaN layer；Wherein, composite construction area is from bottom to top successively by AlxGa1‑xN concave layer, p-type AlyGa1‑yN electronic barrier layer and p-type AlzGa1‑zN hole injection layer composition.For the present invention by the Al component of each section AlGaN in regulation composite construction area alone or in combination, the composite construction area of acquisition not only can be reduced the electronics leakage of multiquantum well region, but also can increase hole injection.Epitaxial structure energy enhanced rad provided by the invention is compound, improves the optical output power of ultraviolet LED.
Description
Technical field
The invention belongs to technical field of semiconductor luminescence, and in particular to a kind of ultraviolet LED epitaxial structure.
Background technique
Ultraviolet (UV) LED is one kind of LED.With the traditional UVs such as the mercury lamp, xenon lamp and deuterium lamp that use on the market at present
Source is compared, and ultraviolet LED has long-life, cold light source, non-thermal radiation, service life not by opening and closing times influence, energy is high and is free of
The advantages that noxious material, it is expected to replace traditional UV sources, become the short wavelength light source of a new generation.
Ultraviolet LED has huge application value, such as biochemistry detection, air and Water warfare, and high-density optical storage is ultraviolet
Solidification and therapeutic treatment etc..For the deep ultraviolet LED of solar blind (being less than 280nm), it can be applied to communicate and analyse scientifically
Equal fields, therefore the market potential of ultraviolet LED is very big.Ultraviolet LED is the main material using AlGaN as structure growth at present,
Its basic structure includes: AlN buffer layer, N-shaped AlGaN layer, AlGaN multiple quantum well layer, AlGaN electronic barrier layer, the hole AlGaN
Implanted layer and p-type GaN layer.
Although ultraviolet LED recent years obtains the attention of industry, develop very slow, the energy unlike visible LED
Large-scale production and market application are fast implemented, it is a kind of the reason is that being influenced by amount low yield, high production cost, more major reason
Be current ultraviolet LED technology it is immature, LED internal quantum efficiency is lower, LED issue optical power it is not high, influence answering for product
With value.To accelerate the technological innovation and industry development of ultraviolet LED, it just be unable to do without the interior quantum effect for continuing to improve ultraviolet LED
The core technologies index such as rate and optical power, and the raising of LED internal quantum efficiency and optical power just needs to optimize the epitaxy junction of LED
Structure.Therefore the epitaxial structure that design improves ultraviolet LED optical output power is critically important work.
Summary of the invention
In order to solve the problems, such as that internal quantum efficiency existing for conventional ultra-violet LED and optical output power are low, the purpose of the present invention
It is to provide a kind of ultraviolet LED epitaxial structure.
In order to achieve the above purpose, the technical solution used in the present invention is:
A kind of ultraviolet LED epitaxial structure, including the substrate, buffer layer, N-shaped AlGaN layer, volume set gradually from bottom to top
Sub- well region, composite construction area and p-type GaN layer；Wherein, composite construction area is from bottom to top successively by AlxGa1-xN concave layer, p-type
AlyGa1-yN electronic barrier layer and p-type AlzGa1-zN hole injection layer composition；AlxGa1-xN concave layer includes identical or different x component
AlxGa1-xN；P-type AlyGa1-yN electronic barrier layer includes the p-type Al of identical or different y componentyGa1-yN；P-type AlzGa1-zN is empty
Cave implanted layer includes the p-type Al of identical or different z componentzGa1-zN；0<x<1；0<y<1；0<z<1.
Further, ultraviolet LED epitaxial structure provided by the invention is successively substrate, AlN buffer layer, N-shaped from bottom to top
AlGaN layer, AlGaN multiquantum well region, AlxGa1-xN concave layer, p-type AlyGa1-yN electronic barrier layer, p-type AlzGa1-zThe injection of the hole N
Layer, p-type GaN layer；Wherein, N-shaped AlGaN layer can be subdivided into n+AlGaN layer and n-AlGaN layers.
In the present invention, x, y, z respectively indicates AlxGa1-xN concave layer, p-type AlyGa1-yN electronic barrier layer and p-type AlzGa1- zThe Al component numerical value of N hole injection layer.
Preferably, in this ultraviolet LED epitaxial structure, AlxGa1-xN concave layer is located at the last barrier layer of multiquantum well region and p
Type AlyGa1-yBetween N electronic barrier layer.
Preferably, in this ultraviolet LED epitaxial structure, regulate and control AlxGa1-xThe x value of N concave layer is greater than the trap of multiquantum well region
Layer Al component numerical value, and it is equal to or less than the barrier layer Al component numerical value of multiquantum well region, make AlxGa1-xN concave layer is relative to volume
The barrier layer difference of sub- well region is equal or recessed；It further illustrates, regulates and controls AlxGa1-xThe x value of N concave layer is greater than the trap of multiquantum well region
Layer Al component numerical value, and it is equal to the barrier layer Al component numerical value of multiquantum well region, make AlxGa1-xN concave layer is relative to multiquantum well region
Barrier layer it is equal；Either regulation AlxGa1-xThe x value of N concave layer is greater than the well layer Al component numerical value of multiquantum well region, and is less than more
The barrier layer Al component numerical value of quantum well region, makes AlxGa1-xN concave layer is recessed relative to the barrier layer of multiquantum well region.
Preferably, in this ultraviolet LED epitaxial structure, work as AlxGa1-xN concave layer is recessed relative to the barrier layer of multiquantum well region
When, recessed shape is rectangle, up-side down triangle or inverted trapezoidal.
Preferably, in this ultraviolet LED epitaxial structure, work as AlxGa1-xN concave layer includes the Al of not identical x componentxGa1-xN
When, the Al of not identical x componentxGa1-xN includes the Al of gradual changexGa1-xThe mode of N, the gradual change are selected from linear gradient or ladder gradually
Become.
Preferably, in this ultraviolet LED epitaxial structure, as p-type AlyGa1-yN electronic barrier layer includes not identical y component
P-type AlyGa1-yWhen N, by regulating and controlling p-type AlyGa1-yThe y value of N electronic barrier layer, can form unimodal or multi-peaks structure.
Preferably, in this ultraviolet LED epitaxial structure, p-type AlyGa1-yIn N electronic barrier layer, the y of at least one group point
Value is greater than the barrier layer Al component numerical value of multiquantum well region.
Preferably, in this ultraviolet LED epitaxial structure, as p-type AlyGa1-yN electronic barrier layer includes not identical y component
P-type AlyGa1-yWhen N, the p-type Al of not identical y componentyGa1-yN includes the p-type Al of gradual changeyGa1-yThe mode of N, the gradual change are selected from
Linear gradient or ladder gradual change.
Preferably, in this ultraviolet LED epitaxial structure, as p-type AlzGa1-zN hole injection layer includes not identical z component
P-type AlzGa1-zWhen N, by regulating and controlling p-type AlzGa1-zThe z value of N hole injection layer, can form unimodal or multi-peaks structure.
Preferably, in this ultraviolet LED epitaxial structure, p-type AlzGa1-zIn N hole injection layer, the z of at least one group point
Value is greater than or equal to the barrier layer Al component numerical value of multiquantum well region.
Preferably, in this ultraviolet LED epitaxial structure, as p-type AlzGa1-zN hole injection layer includes not identical z component
P-type AlzGa1-zWhen N, the p-type Al of not identical z componentzGa1-zN includes the p-type Al of gradual changezGa1-zThe mode of N, the gradual change are selected from
Linear gradient or ladder gradual change.
Preferably, p-type Al described in this ultraviolet LED epitaxial structureyGa1-yN electronic barrier layer or p-type AlzGa1-zThe hole N
Implanted layer, in the unimodal or multi-peaks structure of formation, the shape at peak is selected from one of three horns, rectangle peak, trapezoidal peak or a variety of；
Multi-peaks structure is formed by multiple identical peak shapes or multiple and different peak shape any combination.
In the present invention, " multiple " described in multi-peaks structure refer to two or more.
Preferably, it in this ultraviolet LED epitaxial structure, by any one in regulation x, y, z, two or three, realizes
The structure in composite construction area changes；Further, individually regulate and control AlxGa1-xN concave layer, p-type AlyGa1-yN electronic barrier layer or p-type
AlzGa1-zThe Al component (in x, y, z any one) of any one structure sheaf in N hole injection layer, then cooperate conventional ultra-violet
The other parts in LED composite construction area come realize structure change；Alternatively, regulating and controlling Al simultaneouslyxGa1-xN concave layer, p-type AlyGa1-yN electricity
Sub- barrier layer and p-type AlzGa1-zThe Al component (any two kinds in x, y, z) of any two kinds of structure sheafs in N hole injection layer, then
Cooperate the other parts structure in conventional ultra-violet LED composite construction area to realize that structure changes；Alternatively, regulating and controlling Al simultaneouslyxGa1-xN is recessed
Layer, p-type AlyGa1-yN electronic barrier layer and p-type AlzGa1-zIn N hole injection layer three kinds of structure sheafs Al component (x, y, z this three
Kind) change of Lai Shixian structure.
The beneficial effects of the present invention are:
Al component of the present invention by each section AlGaN in regulation composite construction area alone or in combination, the composite junction of acquisition
Structure area not only can be reduced the electronics leakage of multiquantum well region, but also can increase hole injection.Epitaxial structure provided by the invention can enhance
Radiation recombination improves the optical output power of ultraviolet LED.
Compared with prior art, advantages of the present invention is specific as follows:
1) in order to improve LED luminescent properties, the prior art is improved primarily directed to a certain single layer of LED epitaxial structure
Design, and LED epitaxial structure provided by the invention designs, and is to carry out whole multi-section to the composite construction area of LED to set up meter separately.Phase
For existing single layer designs, the design philosophy that the present invention provides this multi-section separation structure has bigger regulation flexibility.
2) multi-section separation structure design provided by the invention had not only considered the characteristics of a certain layer structure designs, but also can be in view of being somebody's turn to do
Influence of the layer to adjacent layers obtains maximum efficiency by carrying out whole consideration and common optimization design to multi-section separation structure, this
Sample can more promote the luminous efficiency and optical output power of LED, and existing technology does not go to design in this way.
3) present invention proposes to devise Al in composite construction areaxGa1-xElectronics can be effectively limited in multiple quantum wells by N concave layer
Area.Devise the p-type Al of different y componentsyGa1-yN electronic barrier layer, be in order to reduce electronics in the leakage of p-type area, thus into
Electronics is limited in multiquantum well region, while the p-type Al of difference y component by one stepyGa1-yHole is injected in the design of N electronic barrier layer
It is also helpful to multiquantum well region.Design the p-type Al of different z componentszGa1-zN hole injection layer, plays reservoir and transporting holes
Effect, so that the hole of p-type GaN is more effectively injected to multiquantum well region.Composite construction area design in this way, can
It is obvious to inhibit electronics leakage, while increasing hole and being injected into multiquantum well region, enhance the rate of radiative recombination of electronics and hole, from
And improve the internal quantum efficiency and optical output power of LED.
Detailed description of the invention
Fig. 1 is the schematic diagram of ultraviolet LED epitaxial structure of the present invention；
Fig. 2 is the Al change of component schematic diagram in the composite construction area of ultraviolet LED epitaxial structure difference embodiment of the present invention；
Fig. 3 is the luminescent spectrum figure of embodiment 1 and conventional ultra-violet LED epitaxial structure；
Fig. 4 is the optical output power figure of embodiment 1 and conventional ultra-violet LED epitaxial structure；
Fig. 5 is the luminescent spectrum figure of embodiment 2 and conventional ultra-violet LED epitaxial structure；
Fig. 6 is the optical output power figure of embodiment 2 and conventional ultra-violet LED epitaxial structure；
Fig. 7 is the luminescent spectrum figure of embodiment 3 and conventional ultra-violet LED epitaxial structure；
Fig. 8 is the optical output power figure of embodiment 3 and conventional ultra-violet LED epitaxial structure；
Fig. 9 is the luminescent spectrum figure of embodiment 4 and conventional ultra-violet LED epitaxial structure；
Figure 10 is the internal quantum efficiency figure of embodiment 4 and conventional ultra-violet LED epitaxial structure；
Figure 11 is the optical output power figure of embodiment 4 and conventional ultra-violet LED epitaxial structure.
Specific embodiment
Attached drawing 1 is the schematic diagram of ultraviolet LED epitaxial structure of the present invention.Referring to Fig. 1 it is found that ultraviolet LED provided by the invention
Epitaxial structure is successively Sapphire Substrate, AlN buffer layer, n from bottom to top+AlGaN layer, n-AlGaN layers, AlGaN multiple quantum wells
Area, AlxGa1-xN concave layer, p-type AlyGa1-yN electronic barrier layer, p-type AlzGa1-zN hole injection layer, p-type GaN layer.
Below in conjunction with Fig. 1, the contents of the present invention are described in further detail by specific embodiment.In embodiment
Raw material used unless otherwise specified, can be obtained from routine business approach.Preparation or test method mentioned in embodiment
It unless otherwise specified, is the conventional method of this field.
Comparative example (traditional LED structure)
Conventional ultra-violet LED epitaxial structure is in sapphire (Al2O3) about 1.5 μm of a layer thickness of AlN is grown on substrate first
Buffer layer, then successively growth concentration is 8 × 1018cm-3N-shaped Al0.65Ga0.35N layers of (with a thickness of 2 μm, Si is adulterated), concentration are
5×1018cm-3N-shaped Al0.65Ga0.35N layers of (with a thickness of 2 μm, Si is adulterated), 5 period Al0.65Ga0.35N/Al0.55Ga0.45N volume
Sub- well region (Al0.65Ga0.35N and Al0.55Ga0.45N thickness is respectively 10nm and 3nm), concentration be 3 × 1017cm-3P-type
Al0.75Ga0.25N electronic barrier layer (with a thickness of 30nm, Mg doping), concentration is 3 × 1017cm-3P-type Al0.65Ga0.35The hole N note
Enter layer (with a thickness of 15nm, Mg doping) and concentration is 5 × 1017cm-3P-type GaN layer (with a thickness of 0.1 μm, Mg doping), p-electrode
It is to be made of Ni/Au, n-electrode is made of Ti/Al/Ti/Au.The epitaxial structure of ultraviolet LED is obtained using MOCVD growing technology
?.
Embodiment 1
Unlike traditional structure, the present embodiment be the electronic barrier layer in ultraviolet LED composite construction area is designed as it is double
Trapezoidal peak structure (similar dual hump structure), and the electronic barrier layer of traditional structure is only single Al component layers.Attached drawing 2 is this hair
Al change of component schematic diagram in the composite construction area of bright ultraviolet LED epitaxial structure difference embodiment, the structure of this example are detailed in Fig. 2
In 1 structural schematic diagram of embodiment.Here more Al component electrons barrier layer that double trapezoid peak structure is adulterated using Mg, according to
Secondary is 2nm thickness p-Al0.82Ga0.18N, 8nm thickness p-AlGaN graded bedding is (from Al0.82Ga0.18N linear gradient is Al0.65Ga0.35N)、
10nm thickness p-Al0.65Ga0.35N, 2nm thickness p-Al0.82Ga0.18N and 8nm thickness p-AlGaN graded bedding is (from Al0.82Ga0.18N is linearly gradually
Become Al0.65Ga0.35N), the p-type doping concentration of double trapezoid peak material is all 3 × 1017cm-3.The other structures layer of the present embodiment
Parameter is identical as traditional structure, and the epitaxial structures growth technology of use, process conditions and traditional structure are also identical.
In order to compare the photoelectric properties of two different epitaxial structures, first the ultraviolet LED extension of traditional structure and embodiment 1
Piece is cut into the LED chip (300 300 μm of μ m) of identical size, then carries out photoelectric measurement to them.Supplementary explanation,
UV LED chip ultraviolet light under electric current driving is to issue from multiquantum well region, and project outward through Sapphire Substrate.Conventional junction
The LED luminescent spectrum figure and optical output power figure of structure (comparative example) and embodiment 1 are respectively as shown in attached drawing 3 and attached drawing 4.By scheming
3 learn, the spectrum peak that the ultraviolet LED of embodiment 1 and traditional structure issues is identical, are 273nm, are in deep ultraviolet band.But
Under identical operating current, as shown in Figure 4, embodiment 1 has better optical output power than the ultraviolet LED of traditional structure, this shows
Embodiment 1 has better photoelectric properties.
Embodiment 2
The present embodiment has that two o'clock is different from traditional structure, uses Al in composite construction areaxGa1-xN concave layer and p-type sky
Cave implanted layer adds a rectangle peak.By regulating and controlling AlxGa1-xThe Al component of N material realizes the inverted trapezoidal peak structure of concave layer, in detail
See 2 structural schematic diagram of embodiment in attached drawing 2.The inverted trapezoidal peak structure of concave layer be by 2nm thickness AlGaN graded bedding (by
Al0.65Ga0.35N linear gradient is Al0.58Ga0.42) and 2nm thickness Al N0.58Ga0.42N composition, and hole injection layer is adulterated by Mg
Concentration is 3 × 1017cm-36nm thickness p-Al0.65Ga0.35N, 3nm thickness p-Al0.82Ga0.18N and 6nm thickness p-Al0.65Ga0.35N material
Composition, other structures layer parameter are identical as traditional structure.Epitaxial structures growth technology, process conditions and the traditional structure of use
It is identical.
In order to be compared to traditional structure with the LED light electrical property of embodiment 2, first the LED epitaxial wafer of embodiment 2 is cut
It is cut into the chip size (300 300 μm of μ m) of traditional structure, then carries out photoelectric properties test.Traditional structure (comparative example) and reality
The LED luminescent spectrum figure and optical output power figure for applying example 2 are respectively as shown in attached drawing 5 and attached drawing 6.It is learnt by Fig. 5, embodiment 2
Issue identical peak wavelength (273nm) with the LED chip of traditional structure, but it will be appreciated from fig. 6 that embodiment 2 optical output power
Higher (comparing under identical operating current), so embodiment 2 has more preferable photoelectric characteristic than traditional structure.
Embodiment 3
The present embodiment is unlike traditional structure: designing three peaks in the electronic barrier layer in composite construction area, is three
Horn, rectangle peak and the combination of three horns are provided with a peak (by a rectangle peak and three horns in hole injection layer
It is formed by stacking), 3 structural schematic diagram of embodiment being detailed in attached drawing 2.The material structure of electronic barrier layer is followed successively by Mg doping concentration
It is 3 × 1017cm-36nm thickness graded bedding (by Al0.86Ga0.14N linear gradient is Al0.65Ga0.35N), 7nm thickness Al0.65Ga0.35N、
4nm thickness Al0.75Ga0.25N, 7nm thickness Al0.65Ga0.35N and 6nm thickness graded bedding is (by Al0.86Ga0.14N linear gradient is
Al0.65Ga0.35N).And it is 3 × 10 that hole injection layer, which is by Mg doping concentration,17cm-33nm thickness Al0.65Ga0.35N, 4.5nm thickness is gradually
Change layer is (by Al0.75Ga0.25N linear gradient is Al0.86Ga0.14N), 4.5nm thickness graded bedding is (by Al0.86Ga0.14N linear gradient is
Al0.75Ga0.25) and 3nm thickness Al N0.65Ga0.35N material composition.Other structures layer parameter is identical as traditional structure.The extension of use
Structure growth technology, process conditions and traditional structure are also identical.
Compared with making photoelectric properties with traditional structure, first the LED epitaxial wafer of embodiment 3 is cut into the core of traditional structure
Chip size (300 300 μm of μ m), then carry out photoelectric properties test.Traditional structure (comparative example) and the luminous light of the LED of embodiment 3
Spectrogram and optical output power figure are respectively as shown in attached drawing 7 and attached drawing 8.It is learnt by Fig. 7, under the forward current driving of 120mA,
Embodiment 3 and the LED chip of traditional structure issue identical peak wavelength (273nm).But as shown in Figure 8, embodiment 3 issues
Spectrum area is bigger, has more light energies to export.The result of Fig. 8 further confirms LED chip of the embodiment 3 than traditional structure
There is higher optical output power (comparing under identical operating current), therefore embodiment 3 has better photoelectric property than traditional structure.
Embodiment 4
The present embodiment is unlike traditional structure: by regulating and controlling Al component, being provided with up-side down triangle in composite construction area
AlxGa1-xIt is provided in three horns and a rectangle peak, hole injection layer in N concave layer, electronic barrier layer and is provided with one
A three horn, 4 structural schematic diagram of embodiment being detailed in attached drawing 2.AlxGa1-xThe material of N concave layer is the graded bedding using 4nm thickness
(by Al0.65Ga0.35N linear gradient is Al0.58Ga0.42N), the material structure of electronic barrier layer be followed successively by Mg doping concentration be 3 ×
1017cm-37nm thickness graded bedding (by Al0.86Ga0.14N linear gradient is Al0.65Ga0.35N), 16nm thickness Al0.65Ga0.35N and 7nm
Thick Al0.86Ga0.14N composition, and it is 3 × 10 that hole injection layer, which is by Mg doping concentration,17cm-33nm thickness Al0.65Ga0.35N、9nm
Thick graded bedding is (by Al0.86Ga0.14N linear gradient is Al0.65Ga0.35) and 3nm thickness Al N0.65Ga0.35N composition.Other structures layer ginseng
Number is identical as traditional structure.The epitaxial structures growth technology of use, process conditions and traditional structure are also identical.
In order to make comparisons with traditional structure, first the LED epitaxial wafer of embodiment 4 is cut into the chip size of traditional structure
(300 300 μm of μ m), then carry out photoelectric properties analysis, it is the LED luminescent spectrum figure of traditional structure (comparative example) and embodiment 4, interior
Quantum efficiency figure and optical output power figure are respectively as shown in attached drawing 9, attached drawing 10 and attached drawing 11.It is learnt by Fig. 9,4 He of embodiment
The LED chip of traditional structure issues peak wavelength all under 120mA driving current as the spectrum of 273nm, but the sending of embodiment 4
Spectrum area is bigger, has more light energies to export.The result of Figure 10 points out that embodiment 4 has more than the ultraviolet LED of traditional structure
Good internal quantum efficiency, it is under large driven current density that spy, which adds, and the internal quantum efficiency difference of the two becomes apparent from, this is primarily due to reality
The epitaxial structure for applying example 4 is more advantageous to the leakage of limitation electronics, increases the injection in hole, to enhance the radiation of multiquantum well region
It is compound, so the spectrum area ratio traditional structure that embodiment 4 issues is big.The result of Figure 11 further confirms that embodiment 4 compares
The LED chip of traditional structure has higher optical power output (comparing under identical operating current), therefore embodiment 4 compares traditional structure
There is better photoelectricity advantage.
The technological parameters such as structure sheaf shape, thickness and the doping concentration in composite construction area are the present invention in above embodiments
Preferable embodiment, but embodiment of the present invention are not limited by the above embodiments, it is other any without departing from this hair
Made changes, modifications, substitutions, combinations, simplifications under bright spiritual essence and principle, should be equivalent substitute mode, all wrap
Containing within protection scope of the present invention.
Claims (10)
1. a kind of ultraviolet LED epitaxial structure, it is characterised in that: including the substrate, buffer layer, N-shaped set gradually from bottom to top
AlGaN layer, multiquantum well region, composite construction area and p-type GaN layer；The composite construction area is from bottom to top successively by AlxGa1-xN
Concave layer, p-type AlyGa1-yN electronic barrier layer and p-type AlzGa1-zN hole injection layer composition；The AlxGa1-xN concave layer includes identical
Or the Al of difference x componentxGa1-xN；The p-type AlyGa1-yN electronic barrier layer includes the p-type Al of identical or different y componentyGa1- yN；The p-type AlzGa1-zN hole injection layer includes the p-type Al of identical or different z componentzGa1-zN；0<x<1；0<y<1；0<z<
1。
2. a kind of ultraviolet LED epitaxial structure according to claim 1, it is characterised in that: the AlxGa1-xN concave layer is located at more
The last barrier layer in quantum well region and p-type AlyGa1-yBetween N electronic barrier layer.
3. a kind of ultraviolet LED epitaxial structure according to claim 2, it is characterised in that: regulation AlxGa1-xThe x value of N concave layer
Greater than the well layer Al component numerical value of multiquantum well region, and it is equal to or less than the barrier layer Al component numerical value of multiquantum well region, makes
AlxGa1-xN concave layer is equal or recessed relative to the barrier layer difference of multiquantum well region.
4. a kind of ultraviolet LED epitaxial structure according to claim 3, it is characterised in that: the recessed shape be rectangle,
Up-side down triangle or inverted trapezoidal.
5. a kind of ultraviolet LED epitaxial structure according to claim 1, it is characterised in that: by regulating and controlling p-type AlyGa1-yN electricity
The y value on sub- barrier layer, can form unimodal or multi-peaks structure.
6. a kind of ultraviolet LED epitaxial structure according to claim 5, it is characterised in that: the p-type AlyGa1-yThe resistance of N electronics
In barrier, the y value of at least one group point is greater than the barrier layer Al component numerical value of multiquantum well region.
7. a kind of ultraviolet LED epitaxial structure according to claim 1, it is characterised in that: by regulating and controlling p-type AlzGa1-zN is empty
The z value of cave implanted layer, can form unimodal or multi-peaks structure.
8. a kind of ultraviolet LED epitaxial structure according to claim 7, it is characterised in that: the p-type AlzGa1-zThe hole N note
Enter in layer, the z value of at least one group point is greater than or equal to the barrier layer Al component numerical value of multiquantum well region.
9. a kind of ultraviolet LED epitaxial structure according to claim 5 or 7, it is characterised in that: described unimodal or multi-peaks structure
In, the shape at peak is selected from one of three horns, rectangle peak, trapezoidal peak or a variety of；Multi-peaks structure be by multiple identical peak shapes or
The multiple and different peak shape any combination of person are formed.
10. a kind of ultraviolet LED epitaxial structure according to claim 1, it is characterised in that: by any in regulation x, y, z
One kind, two or three realize that the structure in composite construction area changes.
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