WO2002097902A1 - Semiconductor led device - Google Patents
Semiconductor led device Download PDFInfo
- Publication number
- WO2002097902A1 WO2002097902A1 PCT/KR2002/001027 KR0201027W WO02097902A1 WO 2002097902 A1 WO2002097902 A1 WO 2002097902A1 KR 0201027 W KR0201027 W KR 0201027W WO 02097902 A1 WO02097902 A1 WO 02097902A1
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- WIPO (PCT)
- Prior art keywords
- layer
- active layer
- led device
- light
- pumping
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000005086 pumping Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 161
- 238000010586 diagram Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 9
- 239000003086 colorant Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention generally relates to a semiconductor light emitting diode (hereinafter, referred to as 'LED') device, and more particularly, to an AlGalnN-based LED device comprising a pumping layer having high luminous efficiency and an active layer, wherein the pumping layer pumps light into the active layer emitting light of desired wavelength to convert the wavelength, thereby implementing LED device of a single color having its wavelength converted in one device, and LED device of white light by mixing two wavelengths.
- 'LED' semiconductor light emitting diode
- FIG. 1 is a cross-sectional diagram illustrating an embodiment of the conventional LED device using an insulating substrate.
- a conventional AlGalnN-based LED device 1 comprises an insulating substrate 10 consisting of sapphire or quartz.
- a buffer layer 11, an n-type AlGalnN layer 12, an AlGalnN active layer 13, a p-type AlGalnN layer 14 and a transparent electrode 15 are sequentially stacked on the substrate 10.
- a p-type metal electrode 18 is formed on a first portion of the transparent electrode 15.
- An n- type metal electrode 17 is formed on an exposed portion of the n-type AlGalnN layer 12 formed by removing a second portion of the transparent electrode 15, and portions of the p-type AlGalnN layer 14, the active layer 13 and the n-type AlGalnN layer 12 therebelow.
- FIG. 2 is a cross-sectional diagram illustrating another embodiment of the conventional LED device using a conductive substrate such as SiC or Si.
- a buffer layer 20, an n-type AlGalnN layer 21, an AlGalnN active layer 22 and a p- type AlGalnN layer 23 are sequentially epitaxially grown on a fist side of a conductive substrate 19 using an MOCVD (Metal Organic Chemical Vapor Deposition) method.
- MOCVD Metal Organic Chemical Vapor Deposition
- a p-type metal electrode 24 is formed on the p-type AlGalnN layer 23.
- An n-type metal electrode 24 is formed on a second side of the conductive substrate 19.
- a common compound semiconductor light device has a structure in which holes transmitted through a p-type metal electrode combine with electrons transmitted through an n- type metal electrode in a single or multi layered active layer to emit a light corresponding to a bandgap of an active layer composition. Most of the light emitted from the active layer is emitted through an upper and an lower surfaces of the active layer. This is possible because the AlGalnN-based LED devices comprises the transparent electrode on the top of the active layer and the substrate which is transparent to light on the lower portion of the device.
- a light with one wavelength is emitted from an active layer.
- an LED package 3 shown in Fig. 3 is required to obtain white light.
- An LED device 1 of Fig. 1 is mounted on an upper portion of a metal lead frame 29. Metal electrodes of the LED device are connected to the metal lead frame using wires. The LED device 1 is covered with fluorescent material 26. A body molded in a transparent resin is formed.
- a light with a first wavelength 27 is emitted from the LED device by a voltage current applied to the LED device.
- a light with a second wavelength 28 is generated by fluorescent materials, and a mixed light of the lights with the first and the second wavelength 27 and 28 is obtained.
- white light can be obtained from mixing only two lights of two wavelengths.
- fluorescent material containing a YAG is excited using the deep blue LED light having a wavelength of 450nm to generate a yellow light having a wavelength of 590nm which is a complementary color of a blue light having wavelength of 450nm
- an LED package of white light which is a mixture of the two colors is obtained.
- the white light is obtained by adjusting components of a YAG fluorescent layer to tune a yellow wavelength and adjusting a thickness of a fluorescent layer to adjust a ratio of intensity of two lights.
- the white light LED package can substitute a light bulb or a light source of a back light of a display.
- the conventional white light LED package has a relatively simple structure and manufacturing process, the reliability of fluorescent materials is inferior to an LED device resulting in fading of color or deterioration of luminous efficiency when used for a long period.
- a semiconductor LED device comprising: an active layer consisting of at least one Al x Ga y In z N/Al xl Ga y ,In zl N layer having homo-junction; a pumping layer consisting of at least Al a Ga b In c N/Al al Ga bl In cl N layer having hetero- junction, wherein the active layer and the pumpin layer are vertically stacked and a bandgap of an Al x Ga y In z N in a well portion of the active layer is smaller than that of an Al a Ga b In c N in a well portion of the pumping layer.
- the semiconductor LED device of the present invention is characterized in that an electrode formed on the active layer remote from the pumping layer is a front electrode, the front electrode comprises at least one window formed by patterning to emit light bilaterally, width of the window is 0 ⁇ 300 ⁇ m, and the substrate is a transparent or a conductive substrate.
- a semiconductor LED device comprising: an
- AlGalnN buffer layer an n-type AlGalnN layer, an active layer comprising repeatedly stacked Al x Ga y In z N/Al xl G ⁇ a yl In zl N layers having homo-junction, an n- type AlGalnN layer, a pumping layer comprising repeatedly stacked Al a Ga b In c N/Al al Ga bl In cl N layers having hetero-junction, a p-type AlGalnN layer, a p-type metal electrode sequentially stacked on the transparent substrate, and an n- type metal electrode formed on one portion of the n-type AlGalnN layer, wherein a bandgap Eg(Al x Ga y In z N) of an Al x Ga y In z N layer corresponding to the active layer is smaller than a bandgap Eg(Al xl Ga y iIn zl N) of an Al xl Ga yl In zl N layer
- the semiconductor LED device of the present invention is characterized in that the p-type AlGalnN layer and the active layer are interposed between the pumping layer and the p-type AlGalnN layer to emit light of single or multiple wavelengths, the p-type metal electrode comprises windows formed by patterning to emit light bilaterally, and the LED device comprises a conductive substrate instead of the transparent substrate, a transparent electrode instead of the p-type metal electrode.
- Fig. 1 is a cross-sectional diagram illustrating an embodiment of the conventional LED device
- Fig. 2 is a cross-sectional diagram illustrating another embodiment of the conventional LED device
- Fig. 3 is a cross-sectional diagram illustrating a white light LED package having the LED device of Fig. 1 mounted therein;
- Fig. 4 is a cross-sectional diagram illustrating an LED device in accordance with a first embodiment of the present invention
- Fig. 5 is a band diagram of the LED device of Fig. 4;
- Fig. 6 is a cross-sectional diagram illustrating a LED device in accordance with a second preferred embodiment of the present invention
- Fig. 7 is a cross-sectional diagram illustrating a LED device in accordance with a third embodiment of the present invention.
- the efficiency of an AlGalnN-based light device is decreased as the amount of In in an active layer is increased.
- a light emitted from an InGaN active layer containing about 35% of In has a wavelength of about 470nm.
- the power of output in this case is about 3 ⁇ 5mW depending on the structure of a device.
- active layers contains about 5% of In or about 22% of In
- lights from those active layers have wavelengths of 380nm or 430nm, respectively.
- powers of outputs are more than about lOmW even with the same structure. This is due to deterioration in the amount of crystal as the quantity of In in an active layer increases, resulting in low efficiency.
- a novel structure according to the present invention takes advantages of a pumping layer having low In composition and an active layer having high In composition, particularly the active layer absorbing light to convert into light without recombination of electrons and holes by a current.
- light with a desired wavelength can be obtained from the same conductive type such as n-n active layer rather than from the conventional p-n structure.
- inefficient lights having wavelengths of 470nm(blue), 525nm(green) and 635nm(red) can be easily obtained by using a pumping layer emitting highly efficient light having short wavelength such as wavelengths of 380 ⁇ 430nm.
- light having more than one wavelength can be obtained from one LED device.
- Lights with new colors can be obtained by properly combining lights having two or more wavelengths.
- white light when a deep blue light having a wavelength of 450nm generated from a pumping layer is absorbed in an active layer to generate a yellow light having a wavelength of 590nm, which is a complementary color of blue, white light can be obtained by adjusting a thickness of the number of active layers to adjust the amount of blue light absorbed in and penetrating through the active layer.
- a light having two wavelengths can also be obtained by emitting a portion of light of the pumping layer to combine with light from an active layer.
- FIG. 4 is a cross-sectional diagram illustrating a semiconductor LED device in accordance with a first embodiment of the present invention, wherein n-n type homo-junction active layers and pumping layers are vertically stacked.
- a buffer layer 31, an n-type AlGalnN layer 32, a multi- layered active layer 33 comprising repeatedly stacked Al x Ga y In z N/Al xl Ga yl In zl N layers, an n-type AlGalnN layer 34, a multi-layered pumping layer 35 comprising repeatedly stacked Al a Ga b In c N/Al al Ga bl In c ⁇ N layers and a p-type AlGalnN layer 36 are sequentially stacked on a transparent substrate 30 consisting of alumina, sapphire or quartz, preferably using MOCVD method.
- n-type AlGalnN layer 32 formed on a first portion of the transparent substrate 30 and stacked layers formed thereon are removed.
- An n-type metal electrode 37 is formed on the exposed portion of the n-type AlGalnN layer 32.
- a p-type metal electrode 38 consisting of opaque material is formed on the p-type AlGalnN layer 36.
- the active layer 33 which is n-type or p-type comprises a stacked structure of Al x Ga y In z N/Al xl Ga yl In zl N layers repeatedly stacked with different compositions.
- the pumping layer 35 comprises a multi- layer structure of Al a Ga b In c N/Al a
- a bandgap Eg(Al x Ga y In z N) of an Al x Ga y In z N layer corresponding to an active layer is smaller than a bandgap Eg(Al xl Ga yl In zl N) of an Al xl Ga yl In z ,N layer corresponding to a barrier layer.
- the principle of operation of the semiconductor LED device according to the present invention is described referring to Fig. 5.
- Fig. 5 is a band diagram of the LED device of Fig. 4, wherein barrier structures of the active layer 33 and the pumping layer 35 are simplified as an
- a bandgap 40 of the well portion, Eg(Al a Ga b In c N), of the pumping layer must be larger than a bandgap 41 of the well portion, Eg(Al x Ga y In z N), of the active layer 33.
- holes 43 passed through a p- type AlGalnN layer 36 are restrained in the pumping layer 35 and electrons 42 passed through an n-type AlGalnN layer 32 are restrained in the pumping layer 35.
- the electrons and the holes are combined in the pumping layer 35 to emit a light 45 corresponding to the bandgap Eg 40 of the pumping layer 35.
- the light 45 emitted into the lower portion of the pumping layer 35 is absorbed in the active layer 32.
- the light emitted into the upper portion of the pumping layer 35 is reflected on a p-type metal electrode 38 and reabsorbed in the active layer 32.
- the absorbed lights are transformed into electrodes 46 and holes 47.
- the electrons 46 and the holes 47 are restrained by a barrier layer of the active layer 33 and recombined in the active layer 33 to emit a light 48 corresponding to the bandgap Eg 41 of the active layer 33.
- This light has the lowest energy possible in an LED structure and is emitted entirely through a substrate without being absorbed in any layer.
- a bandgap increases as the amount of Al increases while a bandgap decreases as the amount of In increases.
- Bandgaps of the active layer 53 and the pumping layer 55 can be adjusted by utilizing these characteristics.
- Fig. 6 is a cross-sectional diagram illustrating a semiconductor LED device in accordance with a second embodiment of the present invention.
- the semiconductor LED device has a similar structure to that of the LED of Figure 4. However, an active layer is stacked on the upper portion of a pumping layer.
- An n-type metal electrode 60 is formed on the n-type AlGalnN layer 52 at one side of the substrate 50.
- Light with multiple wavelengths or white light can be obtained from one device by adjusting composition and thickness of the active layers 53 and 57 because the active layers 53 and 57 are provided on both sides of the pumping layer 55 to emit a light from the both sides.
- Fig. 7 is a cross-sectional diagram illustrating a semiconductor LED device in accordance with a third embodiment of the present invention.
- the semiconductor LED device has a similar structure to that of the LED of Fig. 4.
- the semiconductor LED device of Fig. 7 comprises a window for emitting a light formed by patterning one side of a p-type metal electrode.
- the p- type metal electrode 77 is partially removed to form a window 78 exposing the p- type AlGalnN layer 76 and emitting a light therethrough.
- An n-type metal electrode 80 is formed on one side of the n-type AlGalnN layer 52.
- the semiconductor LED device of Fig. 7 can be configured to control the amount of light emitted through the window by adjusting the size of window.
- a width of the window 78 Wo is preferably 0 ⁇ 300 ⁇ m.
- the wavelength of light emitted from each side of the substrate can be set to be different.
- a conductive substrate can be used instead of a transparent substrate.
- a transparent electrode is used for a p-type electrode so that a light is emitted therethrough.
- the substrates in the above embodiment are all transparent substrates such as sapphire, alumina or quartz substrates, but conductive substrates such as SiC or Si substrates can also be used.
- the semiconductor layers may be formed using the methods such as MOCVD (Metal-Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy) or VPE (Vapor Phase Epitaxy).
- MOCVD Metal-Organic Chemical Vapor Deposition
- MBE Molecular Beam Epitaxy
- VPE Vap Phase Epitaxy
- a semiconductor LED device in accordance with the present invention comprises a highly efficient multi-layered pumping layer having hetero-junctions and a multi-layered active layer having homo-junctions which has smaller bandgap than that of the pumping layer and converts a received light into light of a desired wavelength. Since light is generated in a pumping layer consisting of AlGalnN having low In composition, and then transmitted into the active layer having high In composition to emit a light of a desired wavelength, a blue shift by a current is reduced and luminous efficiency improved. Light of two or more wavelengths can be obtained from one LED device. Since the LED device is formed using one continuous growth process, reproducibility of a device is improved, thereby yield is improved. Since fluorescent materials with low efficiency for generating white light is not used, efficiency is improved.
- a single color LED having one wavelength wherein a light from a pumping layer is converted into a light with a wavelength of an active layer can be embodied by adjusting the thickness and the number of the active layer to increase absorptivity in the active layer.
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Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0030476A KR100422944B1 (en) | 2001-05-31 | 2001-05-31 | Semiconductor LED device |
KR2001/30476 | 2001-05-31 |
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WO2002097902A1 true WO2002097902A1 (en) | 2002-12-05 |
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PCT/KR2002/001027 WO2002097902A1 (en) | 2001-05-31 | 2002-05-30 | Semiconductor led device |
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WO (1) | WO2002097902A1 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10354936A1 (en) * | 2003-09-30 | 2005-04-28 | Osram Opto Semiconductors Gmbh | Light-emitting semiconductor component, includes active zone, mirror layer and semiconductor converter generating light of greater wavelength than produced in active zone |
EP1670068A1 (en) * | 2004-12-09 | 2006-06-14 | SuperNova Optoelectronics Corporation | Manufacturing method and device for white light emitting |
WO2006062588A1 (en) * | 2004-12-09 | 2006-06-15 | 3M Innovative Properties Company | Adapting short-wavelength led's for polychromatic, broadband, or 'white' emission |
DE102006059612A1 (en) * | 2006-12-12 | 2008-06-19 | Forschungsverbund Berlin E.V. | Semiconductor component and method for its production |
WO2009039815A1 (en) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor body |
US7719015B2 (en) | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
US7745814B2 (en) | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
CN102738341A (en) * | 2011-04-01 | 2012-10-17 | 山东华光光电子有限公司 | LED structure using AlGaInN quaternary material as quantum well and quantum barrier and manufacturing method thereof |
WO2013036346A2 (en) * | 2011-08-23 | 2013-03-14 | Micron Technology, Inc. | Wavelength converters for solid state lighting devices, and associated systems and methods |
WO2014140118A1 (en) * | 2013-03-14 | 2014-09-18 | Centre National De La Recherche Scientifique | Monolithic light-emitting device |
US8941566B2 (en) | 2007-03-08 | 2015-01-27 | 3M Innovative Properties Company | Array of luminescent elements |
US10096748B2 (en) | 2011-08-23 | 2018-10-09 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
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KR20010075185A (en) * | 1998-09-16 | 2001-08-09 | 크리 인코포레이티드 | Vertical geometry ingan led |
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JPH1075012A (en) * | 1996-06-27 | 1998-03-17 | Mitsubishi Electric Corp | Semiconductor laser device and its manufacture |
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- 2001-05-31 KR KR10-2001-0030476A patent/KR100422944B1/en active IP Right Grant
-
2002
- 2002-05-30 WO PCT/KR2002/001027 patent/WO2002097902A1/en not_active Application Discontinuation
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US11233179B2 (en) | 2011-08-23 | 2022-01-25 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
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US8975614B2 (en) | 2011-08-23 | 2015-03-10 | Micron Technology, Inc. | Wavelength converters for solid state lighting devices, and associated systems and methods |
US10096748B2 (en) | 2011-08-23 | 2018-10-09 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
US10468562B2 (en) | 2011-08-23 | 2019-11-05 | Micron Technology, Inc. | Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods |
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Also Published As
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KR100422944B1 (en) | 2004-03-12 |
KR20010070709A (en) | 2001-07-27 |
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