CN110208905A - For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip - Google Patents
For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip Download PDFInfo
- Publication number
- CN110208905A CN110208905A CN201910440226.6A CN201910440226A CN110208905A CN 110208905 A CN110208905 A CN 110208905A CN 201910440226 A CN201910440226 A CN 201910440226A CN 110208905 A CN110208905 A CN 110208905A
- Authority
- CN
- China
- Prior art keywords
- optical chip
- optical
- scribing
- wafer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to optical chip manufacture fields, it is related to the production method and optical chip of a kind of scribing etching for improving optical chip cut quality and optical chip, solve the problems, such as that optical chip cutting causes optical chip to damage, deep etching is carried out by the scribing position on wafer, cut through entire optical layer (including light waveguide-layer and covering), form scribing groove, scribing system is allowed only to etch wafer substrate, without influencing optical layer, to be effectively reduced since wafer cuts caused optical chip chipping and optical chip is damaged.
Description
Technical field
The invention belongs to optical chip manufacture fields, and in particular to a kind of scribing etching for improving optical chip cut quality
And the production method of optical chip.
Background technique
Wafer level processing techniques are the mainstreams of current plane optical waveguide (planar lightwave circuits (PLCs))
Processing method.The wafer processing techniques of CMOS technology are based especially on, there is good equipment compatibility, can efficiently use existing
Semiconductor microelectronic process equipment processed, be the planar optical waveguide processing method presently most praised highly.This processing skill
The process of art is usually for example to select silicon as substrate since wafer substrate, then various transparent glass materials
Material deposits on the substrate, forms planar optical waveguide by photoetching, etching.On single wafer, can once it complete on hundred
The processing of thousand optical chips.
After completing optical chip processing, the separation of optical chip is usually that cutting machine is utilized to come in horizontal and vertical upper cutting crystal wafer
It realizes.Industrially, it cuts silicon or the process of other similar wafers is called scribing.Scribing be usually utilize it is one very thin,
Very accurate high speed rotation saw blade (saw blade) Lai Shixian wafer cutting.On the one hand, there are many variety classes on the market
The saw blade of unlike material, cutting performance are also different.Each material has the corresponding best saw blade of one kind to realize most
Good cutting performance.On the other hand, optical device is made of the optics layer material of wafer substrate and its upper surface deposition, they are two
Kind or a variety of very different materials.Without a certain kind saw blade optimal cutting can be realized simultaneously to two or more different materials
Performance, thus the saw blade of final choice is the characteristic according to two or more different materials and one kind for taking is split the difference.
The saw blade width of scribing system is generally between tens to several hundred microns, when being cut using this saw blade to wafer, saw blade
Mechanical force act directly on wafer, cut through whole wafer from top to bottom.In the process, it is easy to cause stress to damage wafer
Wound, and then chip performance is influenced, reduce optical chip yield.In addition, wafer is first usually cut into strip in optical field
(Bar), then one or two side of these Bar can be ground, polishing treatment, to be tested for the property.It completes
After test, then these Bars are further cut, separated, obtains simple grain optical chip.Certain grindings, polishing process can be led
It causes to form wedge angle on optical chip, be easy to cause side to damage when being subsequently cut into simple grain, lead to optical chip chipping and optical chip
It is damaged.
Summary of the invention
In order to solve the problems, such as that optical chip cutting causes optical chip to damage, the present invention provides one kind and cuts for improving optical chip
The scribing lithographic method for cutting quality forms groove by carrying out deep etching on optical chip dicing lane (dicing lane), carves saturating
Entire optical layer forms scribing groove.Depth of groove reaches wafer substrate surface, and recess width is more slightly larger than saw blade width,
When to guarantee using traditional dicing system cutting crystal wafer, saw blade does not need cutting and contact optical layer, and only cutting crystal wafer serves as a contrast
Bottom, to eliminate saw blade cutting bring optical chip chipping and optical chip breakage.
The technical solution of the present invention is to provide a kind of for improving the scribing lithographic method of optical chip cut quality, default
Wafer Dicing road (dicing lane) on perform etching to form scribing groove, the slot bottom of the scribing groove is wafer substrate
Upper surface, the width of the scribing groove are greater than the width of cutting saw blade.
Further, dicing lane is preset on wafer by following methods: dicing lane mask is designed according to optical chip structure
Dicing lane is transferred on the photoresist of wafer surface layer by plate using dicing lane mask plate.
Further, using photoetching, dry etching (including ion beam milling etching, plasma etching and reactive ion etching etc.)
Or wet etching method forms scribing groove.
The present invention also provides a kind of production methods of optical chip, comprising the following steps:
Step 1: processing wafer, designs dicing lane mask plate according to optical chip structure;
Step 2: dicing lane is transferred on the photoresist of wafer surface layer by photoetching, performs etching to be formed along dicing lane and draw
Piece groove, the slot bottom of the scribing groove are wafer substrate upper surface, and the width of the scribing groove is greater than the width of cutting saw blade
Degree;
Step 3: depth direction cutting crystal wafer substrate of the control cutting saw blade along scribing groove.
Further, in order to realize optimal cutting performance, above-mentioned cutting saw blade is the dedicated cutting saw blade of wafer substrate.
Further, above-mentioned steps three specifically:
3.1), control cutting saw blade forms bar along the depth direction cutting crystal wafer substrate of scribing groove;
3.2), the bar that cutting is formed is inputted and output end face polishes;
3.3) step 3.2) treated bar is cut again along the depth direction of scribing groove, forms simple grain light core
Piece.
The present invention also provides a kind of optical chips, the optical layer including substrate and setting on substrate, and the optical layer includes
Light waveguide-layer (optical waveguide layer) and covering (cladding layer), are characterized in that above-mentioned light
The width for learning layer is less than the width of substrate.
The beneficial effects of the present invention are:
1, dicing lane (dicing lane) pattern is processed into mask plate according to optical chip scribing demand by the present invention
(mask), the spin coating photoresist on the wafer surface layer (covering) completed after processing, dicing lane pattern is shifted cover by photoetching
Onto the photoresist on wafer surface layer.It is carried out using the region that glue is sheltered that will not be photo-etched of dry etching or wet etching selectivity
Etching forms scribing groove so that pattern is further transferred to wafer surface layer.The region that is etched (scribing groove) of wafer by
Mask plate, litho machine determine that it is (wet to etch plasma (dry etching) or chemical molecular used for precision height (1 micron or less)
Method etching) size is far smaller than the saw blade width (tens arrive several hundred microns) of scribing system, and groove side is thick after the completion of etching
Rugosity hereinafter, resulting stress is far smaller than stress caused by saw blade machine cuts, therefore will not make wafer at 1 micron
At stress damage, the chipping of wafer optical layer or breakage not will lead to.
2, scribing depth of groove of the present invention reaches wafer substrate, and width is greater than the width of cutting saw blade, it is ensured that scribing groove
It is fully able to accommodate cutting saw blade, to guarantee that the optical layer when carrying out scribing using traditional dicing system, on substrate (includes
Light waveguide-layer and covering) it has been cut open, the direct cutting crystal wafer substrate of saw blade is not contacted with the optical layer side on wafer, because
This optical chip not will receive the influence of saw blade mechanical stress, and optical chip chipping and wafer breakage is effectively reduced.
3, the method for the present invention, which also helps, optimizes saw blade performance, selects the saw specifically for wafer substrate material
Item, rather than select that can cut optical layer and cut all purpose saw blade of substrate, and then can further improve cutting matter
Amount.
4, be conducive to improve the alignment precision of scribing system by scribing groove, more accurately cut to realize.
Detailed description of the invention
Fig. 1 is to contain the semiconductor crystal wafer schematic diagram of countless simple grain optical chips;
Fig. 2 is cross-sectional view of the simple grain optical chip along xz plane;
Fig. 3 is cross-sectional view of the simple grain optical chip along x/y plane;
Fig. 4 is cross-sectional view of the simple grain optical chip along yz plane;
Fig. 5 is cross-sectional view of the strip comprising three optical chips along x/y plane;
Fig. 6 is the strip after etched recesses of the present invention comprising three optical chips along the cross-sectional view of x/y plane;
Fig. 7 is the simple grain optical chip schematic diagram obtained using the method for the present invention;
Fig. 8 is the top view of whole wafer after present invention etching.
Appended drawing reference in figure are as follows: 1- simple grain optical chip, 2- optical waveguide, 3- covering, 4- input face, 5- output face, the side 6-,
7- silicon substrate, the sharp side 8-, output end face of the 9- with angle, 10- scribing groove, 11- etch side, and 12- cuts side.
Specific embodiment
The present invention is further described through below in conjunction with drawings and the specific embodiments.
The batch production of optical chip is to exist on thousands of on a wafer with wafer (wafer) for basic process unit
Ten thousand optical chips, it is therefore desirable to wafer be cut into separation to obtain simple grain optical chip.Wafer is first usually cut into strip
(Bar), (in industry term, what strip referred to is to be formed by chip along the cutting of adjacent two column Chip Vertical, its length can
To be the length of wafer or smaller, the simple grain optical chip not being separated from each other comprising a column.) be then further cut into
Simple grain optical chip.Traditional dicing (cutting) system carries out scribing using high-speed rotating saw blade (saw blade), is by mechanical force
Crystal column surface is acted directly on, stress damage can be generated by cut portion in wafer.In addition, saw blade is generally be directed to a certain specific
The characteristic of material is designed optimization, but wafer is made of two or more material systems, therefore uses this saw
Item carries out optical chip cutting and is easy to be generated optical chip chipping due to stress and optical chip is damaged, and then reduced product yield.
The present invention carries out deep etching by scribing position on wafer, cut through entire optical layer (including light waveguide-layer and
Covering), formed scribing groove, allow scribing system only to etch wafer substrate, without influence optical layer, thus be effectively reduced due to
Optical chip chipping caused by wafer is cut and optical chip are damaged.The detail of the program is described in lower Fig. 1 to Fig. 7, sufficiently
Embody the advantage of the program.
For ease of description, defining the direction of propagation of the light in optical waveguide is z to plane is flat for xz where wafer upper surface
Face.
Fig. 1 describes one and typically contains the semiconductor crystal wafer of countless simple grain optical chips.By to semiconductor crystal wafer
Cutting or scribing are carried out to realize the separation of optical chip.Wafer is divided into numerous simple grain optical chip by the dash line of Fig. 1, these
The position that dash line represents is the position of scribing system cutting crystal wafer.Industrially, cutting line is also commonly referred to as drawing simultaneously
Film channel (dicing lanes).
For sun adjuster part, after wafer is cut into strip (Bar), it usually needs be polished directly.Polishing usually relates to
And side is realized to grind one or two side of strip to similar mud, liquid comprising dusty material particle
" optically smooth " (optically smooth).The size of the optically smooth scratch meaned on side or recess will be much smaller than
Corresponding optical wavelength, or it is much smaller than 1 micron.And before optical fiber is coupled with optical chip, also usually require to optical chip
One side carries out the polishing for the angle for having certain, usually polish with the state of Bar and then cut again, is dropped with this
Echo reflection between low optical fiber and optical chip.In general, the angle of polishing is usually to spend (here with vertical direction in 8 to 12
Vertically mean that the upper surface of optical chip, lower surface are all an angle of 90 degrees, i.e., side is " rectangular ").In addition, in the another of optical chip
A side usually requires to carry out a polishing close to 45 degree of angles.Signal light can be directly reflected into the upper table of optical chip in this way
Face is received by optical detector.
Fig. 2 to Fig. 4 describes the schematic diagram of three kinds of simple grain optical chips.Optowire in Fig. 2 is by the light included in covering 3
Waveguide 2 constitutes (simple grain optical chip 1 includes optical waveguide 2 and the covering 3 for being wrapped in optical waveguide outer peripheral surface), and typical case includes input
Face 4 and output face 5 (side).Input terminal receives optical signal, for example from fiber array, optical chip handles this optical signal,
And the optical signal handled well is exported from output end.Sometimes, the input of optical chip, output port are in the same side of optical chip
Face.On the whole, any side, the upper surface including optical chip all can serve as input port, output port, or simultaneously
As input, output port.Optical chip side as input or output port usually requires to be polished, and realizes that optics is flat
It is sliding.Side by polishing is generally termed " end face " (facet).Not by polishing, and without optics input or output end
Side existing for mouthful is called " side " (edge).
Simple grain optical chip is shown along the schematic sectional view in the face xy in Fig. 3, includes typical material stacked structure.Optical layer
For example light waveguide-layer and covering are deposited on the upper surface of wafer substrate.Typical wafer substrate is silicon, but according to application
Difference, substrate of other materials such as quartz, indium phosphide, GaAs etc. can also use.Fig. 3 can also be used to describe defeated simultaneously
Enter, output end face.
Simple grain optical chip is shown along the sectional schematic in the face yz in Fig. 4, in this drawing, the output end face 9 with angle
Angle is polished close to 45 degree, causes side very sharp.This sharp side is very crisp, when scribing system is cut, in machine
Fragmentation is easy under tool stress.
The strip comprising part optical chip is shown along the schematic sectional view in the face xy in Fig. 5.In Fig. 5, shown in sectional view
3 simple grain optical chips are shown.The strip can be cut into 3 individual light cores along the dash line shown in figure by scribing system
Piece.As seen from the figure, dash line passes through optical glass layer and wafer substrate.In wafer dicing process, if optical glass material
Rupture, then the optical property of optical chip will be affected, entire optical chip will be considered useless.Therefore, this
It may be decreased the product yield of whole wafer, increase cost.
Key component of the invention is shown in Fig. 6.After wafer completes conventional production and processing step, according to light core
Dicing lane (dicing lanes) pattern is processed into mask plate (mask) by piece scribing demand, the wafer table after completing processing
Spin coating photoresist on layer (covering) is covered the transfer of dicing lane pattern on the photoresist on wafer surface layer by photoetching.Using dry
The region that glue is sheltered that will not be photo-etched of method etching or wet etching selectivity performs etching, so that pattern is further transferred to
Wafer surface layer, formation width are the scribing groove 10 of W, and W is greater than the saw blade (saw blade) that scribing system is used to cutting crystal wafer
Width, and depth of groove is D, has directly cut through entire optical layer, until (width direction is the direction y, depth side to wafer substrate
To for the direction x).When being cut to the wafer for having already passed through deep etching using scribing system, it is only necessary to be cut along groove
Wafer substrate is just.Since saw blade width is less than recess width W, saw blade will not encounter optical layer, will not be by optical layer
It is cut in wafer and introduces mechanical stress, optical chip chipping will not be generated and optical chip is damaged, and then promote optical chip yield.
Fig. 7 is shown on wafer using a simple grain optical chip after deep etching process cutting, it can be seen that optics
The width of layer is less than the width of substrate.Scribing system forms wafer substrate side by cutting crystal wafer, but the side of optical layer
While being by being formed after deep etching, the two is different.
An example being applied to after whole wafer using the method that deep etching forms dicing lane is shown in Fig. 8.In figure
Dash line cutting position is shown.The width of the optical chip optical layer is less than the width of substrate 7, wherein 11 be etching side
Side, 12 be cutting side.
According to the difference for the material that is etched, etched recesses can use accomplished in many ways on wafer, including reaction from
Son etching or various wet etchings.By designing optical mask, allows on wafer the region for not needing to be etched opaque, need
The place being etched keeps light transmission, so as to etch specific groove pattern on wafer.
Claims (7)
1. a kind of for improving the scribing lithographic method of optical chip cut quality, it is characterised in that: in preset Wafer Dicing road
(dicinglane) it performing etching to form scribing groove on, the slot bottom of the scribing groove is wafer substrate upper surface, described stroke
The width of piece groove is greater than the width of cutting saw blade.
2. according to claim 1 for improving the scribing lithographic method of optical chip cut quality, it is characterised in that: according to
Optical chip structure designs dicing lane mask plate, and dicing lane pattern is transferred to wafer surface layer photoresist using dicing lane mask plate
On.
3. according to claim 2 for improving the scribing lithographic method of optical chip cut quality, it is characterised in that: use
Photoetching, dry etching or wet etching method form scribing groove.
4. a kind of production method of optical chip, which comprises the following steps:
Step 1: processing wafer, designs dicing lane mask plate according to optical chip structure;
Step 2: dicing lane is transferred on the photoresist of wafer surface layer by photoetching, perform etching that form scribing recessed along dicing lane
Slot, the slot bottom of the scribing groove are wafer substrate upper surface, and the width of the scribing groove is greater than the width of cutting saw blade;
Step 3: depth direction cutting crystal wafer substrate of the control cutting saw blade along scribing groove.
5. the production method of optical chip according to claim 4, it is characterised in that: the cutting saw blade is that wafer substrate is special
Use cutting saw blade.
6. the production method of optical chip according to claim 5, which is characterized in that the step 3 specifically:
3.1), control cutting saw blade forms bar along the depth direction cutting crystal wafer substrate of scribing groove;
3.2), the bar that cutting is formed is inputted and output end face polishes;
3.3) step 3.2) treated bar is cut again along the depth direction of scribing groove, forms simple grain optical chip.
7. a kind of optical chip, the optical layer including substrate and setting on substrate, the optical layer include light waveguide-layer
(optical waveguide layer) and covering (cladding layer), it is characterised in that: the width of the optical layer is small
In the width of substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910440226.6A CN110208905A (en) | 2019-05-24 | 2019-05-24 | For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910440226.6A CN110208905A (en) | 2019-05-24 | 2019-05-24 | For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110208905A true CN110208905A (en) | 2019-09-06 |
Family
ID=67788609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910440226.6A Pending CN110208905A (en) | 2019-05-24 | 2019-05-24 | For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110208905A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112758885A (en) * | 2020-12-25 | 2021-05-07 | 中国电子科技集团公司第十三研究所 | Cutting method of MEMS (micro-electromechanical systems) special-shaped chip |
CN113629165A (en) * | 2020-05-07 | 2021-11-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
CN115295409A (en) * | 2022-07-20 | 2022-11-04 | 武汉光谷信息光电子创新中心有限公司 | Wafer scribing method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101137463A (en) * | 2005-05-16 | 2008-03-05 | 宋健民 | Superhard cutters and associated methods |
CN102130238A (en) * | 2010-12-29 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Method for cutting sapphire substrate LED chip |
CN103235364A (en) * | 2013-04-28 | 2013-08-07 | 四川天邑康和通信股份有限公司 | Chip cutting process of planar lightwave circuit splitter |
CN108040505A (en) * | 2015-09-21 | 2018-05-15 | 华为技术有限公司 | Semiconductor optical device |
CN109449084A (en) * | 2018-09-27 | 2019-03-08 | 全球能源互联网研究院有限公司 | A kind of dicing method and semiconductor devices of power chip |
CN109449120A (en) * | 2018-09-29 | 2019-03-08 | 中国电子科技集团公司第十研究所 | A method of optimization scribing quality |
CN109461701A (en) * | 2018-09-27 | 2019-03-12 | 全球能源互联网研究院有限公司 | A kind of compound dicing method and semiconductor devices of power chip |
-
2019
- 2019-05-24 CN CN201910440226.6A patent/CN110208905A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101137463A (en) * | 2005-05-16 | 2008-03-05 | 宋健民 | Superhard cutters and associated methods |
CN102130238A (en) * | 2010-12-29 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Method for cutting sapphire substrate LED chip |
CN103235364A (en) * | 2013-04-28 | 2013-08-07 | 四川天邑康和通信股份有限公司 | Chip cutting process of planar lightwave circuit splitter |
CN108040505A (en) * | 2015-09-21 | 2018-05-15 | 华为技术有限公司 | Semiconductor optical device |
CN109449084A (en) * | 2018-09-27 | 2019-03-08 | 全球能源互联网研究院有限公司 | A kind of dicing method and semiconductor devices of power chip |
CN109461701A (en) * | 2018-09-27 | 2019-03-12 | 全球能源互联网研究院有限公司 | A kind of compound dicing method and semiconductor devices of power chip |
CN109449120A (en) * | 2018-09-29 | 2019-03-08 | 中国电子科技集团公司第十研究所 | A method of optimization scribing quality |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113629165A (en) * | 2020-05-07 | 2021-11-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
CN112758885A (en) * | 2020-12-25 | 2021-05-07 | 中国电子科技集团公司第十三研究所 | Cutting method of MEMS (micro-electromechanical systems) special-shaped chip |
CN115295409A (en) * | 2022-07-20 | 2022-11-04 | 武汉光谷信息光电子创新中心有限公司 | Wafer scribing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110208905A (en) | For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip | |
US6911672B2 (en) | Method and apparatus for preparing a plurality of dice in wafers | |
US6993225B2 (en) | Tapered structure for providing coupling between external optical device and planar optical waveguide and method of forming the same | |
US6909830B2 (en) | Method and apparatus for on-wafer testing of an individual optical chip | |
CN103235364B (en) | Planar optical waveguide splitter chip cutting technique | |
KR20110064460A (en) | Method of forming waveguide facet and photonics device embodying the same | |
CN101208624A (en) | Optical device with cantilevered fiber array and method thereof | |
CN113640925A (en) | Edge coupler with stacked layers | |
CN111952294A (en) | Semiconductor package structure and manufacturing method thereof | |
CN107464777A (en) | Semiconductor crystal wafer and its manufacture method | |
Brusberg et al. | Glass interposer for high-density photonic packaging | |
US10514502B2 (en) | Back-side etching and cleaving of substrates | |
US20110062111A1 (en) | Method of fabricating microscale optical structures | |
CN103698855A (en) | Self-aligning silicon-based optical fiber clamp and manufacturing method thereof | |
US20170068052A1 (en) | Frontside coupled waveguide with backside optical connection | |
CN114442223B (en) | Multimode optical waveguide structure with isolation absorber | |
EP0532229A1 (en) | Method of polishing silicon-based optical waveguides | |
JP4449088B2 (en) | Semiconductor wafer and manufacturing method thereof | |
JPH0536825A (en) | Semiconductor chip cutting method | |
JPH0212110A (en) | Production of optical integrated circuit | |
CN103698856B (en) | Silica-based optical fibers fixture and manufacture method | |
US11022757B1 (en) | Using an anti-reflection coating with a grating coupler | |
KR20040080274A (en) | Wafer dicing method using dry etching and back grinding | |
JP2004233757A (en) | Manufacture method of optical waveguide element | |
CN117970567A (en) | Preparation method applied to 2.5-dimensional heterogeneous integrated optical waveguide |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190906 |