CN110208905A - For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip - Google Patents

For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip Download PDF

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Publication number
CN110208905A
CN110208905A CN201910440226.6A CN201910440226A CN110208905A CN 110208905 A CN110208905 A CN 110208905A CN 201910440226 A CN201910440226 A CN 201910440226A CN 110208905 A CN110208905 A CN 110208905A
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Prior art keywords
optical chip
optical
scribing
wafer
layer
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CN201910440226.6A
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Chinese (zh)
Inventor
布兰特·埃弗雷特·李特尔
尹兵
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Ningbo Dongli Consun Photoelectric Technology Co Ltd
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Ningbo Dongli Consun Photoelectric Technology Co Ltd
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Priority to CN201910440226.6A priority Critical patent/CN110208905A/en
Publication of CN110208905A publication Critical patent/CN110208905A/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/136Integrated optical circuits characterised by the manufacturing method by etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention belongs to optical chip manufacture fields, it is related to the production method and optical chip of a kind of scribing etching for improving optical chip cut quality and optical chip, solve the problems, such as that optical chip cutting causes optical chip to damage, deep etching is carried out by the scribing position on wafer, cut through entire optical layer (including light waveguide-layer and covering), form scribing groove, scribing system is allowed only to etch wafer substrate, without influencing optical layer, to be effectively reduced since wafer cuts caused optical chip chipping and optical chip is damaged.

Description

For improve optical chip cut quality scribing etching and optical chip production method and Optical chip
Technical field
The invention belongs to optical chip manufacture fields, and in particular to a kind of scribing etching for improving optical chip cut quality And the production method of optical chip.
Background technique
Wafer level processing techniques are the mainstreams of current plane optical waveguide (planar lightwave circuits (PLCs)) Processing method.The wafer processing techniques of CMOS technology are based especially on, there is good equipment compatibility, can efficiently use existing Semiconductor microelectronic process equipment processed, be the planar optical waveguide processing method presently most praised highly.This processing skill The process of art is usually for example to select silicon as substrate since wafer substrate, then various transparent glass materials Material deposits on the substrate, forms planar optical waveguide by photoetching, etching.On single wafer, can once it complete on hundred The processing of thousand optical chips.
After completing optical chip processing, the separation of optical chip is usually that cutting machine is utilized to come in horizontal and vertical upper cutting crystal wafer It realizes.Industrially, it cuts silicon or the process of other similar wafers is called scribing.Scribing be usually utilize it is one very thin, Very accurate high speed rotation saw blade (saw blade) Lai Shixian wafer cutting.On the one hand, there are many variety classes on the market The saw blade of unlike material, cutting performance are also different.Each material has the corresponding best saw blade of one kind to realize most Good cutting performance.On the other hand, optical device is made of the optics layer material of wafer substrate and its upper surface deposition, they are two Kind or a variety of very different materials.Without a certain kind saw blade optimal cutting can be realized simultaneously to two or more different materials Performance, thus the saw blade of final choice is the characteristic according to two or more different materials and one kind for taking is split the difference. The saw blade width of scribing system is generally between tens to several hundred microns, when being cut using this saw blade to wafer, saw blade Mechanical force act directly on wafer, cut through whole wafer from top to bottom.In the process, it is easy to cause stress to damage wafer Wound, and then chip performance is influenced, reduce optical chip yield.In addition, wafer is first usually cut into strip in optical field (Bar), then one or two side of these Bar can be ground, polishing treatment, to be tested for the property.It completes After test, then these Bars are further cut, separated, obtains simple grain optical chip.Certain grindings, polishing process can be led It causes to form wedge angle on optical chip, be easy to cause side to damage when being subsequently cut into simple grain, lead to optical chip chipping and optical chip It is damaged.
Summary of the invention
In order to solve the problems, such as that optical chip cutting causes optical chip to damage, the present invention provides one kind and cuts for improving optical chip The scribing lithographic method for cutting quality forms groove by carrying out deep etching on optical chip dicing lane (dicing lane), carves saturating Entire optical layer forms scribing groove.Depth of groove reaches wafer substrate surface, and recess width is more slightly larger than saw blade width, When to guarantee using traditional dicing system cutting crystal wafer, saw blade does not need cutting and contact optical layer, and only cutting crystal wafer serves as a contrast Bottom, to eliminate saw blade cutting bring optical chip chipping and optical chip breakage.
The technical solution of the present invention is to provide a kind of for improving the scribing lithographic method of optical chip cut quality, default Wafer Dicing road (dicing lane) on perform etching to form scribing groove, the slot bottom of the scribing groove is wafer substrate Upper surface, the width of the scribing groove are greater than the width of cutting saw blade.
Further, dicing lane is preset on wafer by following methods: dicing lane mask is designed according to optical chip structure Dicing lane is transferred on the photoresist of wafer surface layer by plate using dicing lane mask plate.
Further, using photoetching, dry etching (including ion beam milling etching, plasma etching and reactive ion etching etc.) Or wet etching method forms scribing groove.
The present invention also provides a kind of production methods of optical chip, comprising the following steps:
Step 1: processing wafer, designs dicing lane mask plate according to optical chip structure;
Step 2: dicing lane is transferred on the photoresist of wafer surface layer by photoetching, performs etching to be formed along dicing lane and draw Piece groove, the slot bottom of the scribing groove are wafer substrate upper surface, and the width of the scribing groove is greater than the width of cutting saw blade Degree;
Step 3: depth direction cutting crystal wafer substrate of the control cutting saw blade along scribing groove.
Further, in order to realize optimal cutting performance, above-mentioned cutting saw blade is the dedicated cutting saw blade of wafer substrate.
Further, above-mentioned steps three specifically:
3.1), control cutting saw blade forms bar along the depth direction cutting crystal wafer substrate of scribing groove;
3.2), the bar that cutting is formed is inputted and output end face polishes;
3.3) step 3.2) treated bar is cut again along the depth direction of scribing groove, forms simple grain light core Piece.
The present invention also provides a kind of optical chips, the optical layer including substrate and setting on substrate, and the optical layer includes Light waveguide-layer (optical waveguide layer) and covering (cladding layer), are characterized in that above-mentioned light The width for learning layer is less than the width of substrate.
The beneficial effects of the present invention are:
1, dicing lane (dicing lane) pattern is processed into mask plate according to optical chip scribing demand by the present invention (mask), the spin coating photoresist on the wafer surface layer (covering) completed after processing, dicing lane pattern is shifted cover by photoetching Onto the photoresist on wafer surface layer.It is carried out using the region that glue is sheltered that will not be photo-etched of dry etching or wet etching selectivity Etching forms scribing groove so that pattern is further transferred to wafer surface layer.The region that is etched (scribing groove) of wafer by Mask plate, litho machine determine that it is (wet to etch plasma (dry etching) or chemical molecular used for precision height (1 micron or less) Method etching) size is far smaller than the saw blade width (tens arrive several hundred microns) of scribing system, and groove side is thick after the completion of etching Rugosity hereinafter, resulting stress is far smaller than stress caused by saw blade machine cuts, therefore will not make wafer at 1 micron At stress damage, the chipping of wafer optical layer or breakage not will lead to.
2, scribing depth of groove of the present invention reaches wafer substrate, and width is greater than the width of cutting saw blade, it is ensured that scribing groove It is fully able to accommodate cutting saw blade, to guarantee that the optical layer when carrying out scribing using traditional dicing system, on substrate (includes Light waveguide-layer and covering) it has been cut open, the direct cutting crystal wafer substrate of saw blade is not contacted with the optical layer side on wafer, because This optical chip not will receive the influence of saw blade mechanical stress, and optical chip chipping and wafer breakage is effectively reduced.
3, the method for the present invention, which also helps, optimizes saw blade performance, selects the saw specifically for wafer substrate material Item, rather than select that can cut optical layer and cut all purpose saw blade of substrate, and then can further improve cutting matter Amount.
4, be conducive to improve the alignment precision of scribing system by scribing groove, more accurately cut to realize.
Detailed description of the invention
Fig. 1 is to contain the semiconductor crystal wafer schematic diagram of countless simple grain optical chips;
Fig. 2 is cross-sectional view of the simple grain optical chip along xz plane;
Fig. 3 is cross-sectional view of the simple grain optical chip along x/y plane;
Fig. 4 is cross-sectional view of the simple grain optical chip along yz plane;
Fig. 5 is cross-sectional view of the strip comprising three optical chips along x/y plane;
Fig. 6 is the strip after etched recesses of the present invention comprising three optical chips along the cross-sectional view of x/y plane;
Fig. 7 is the simple grain optical chip schematic diagram obtained using the method for the present invention;
Fig. 8 is the top view of whole wafer after present invention etching.
Appended drawing reference in figure are as follows: 1- simple grain optical chip, 2- optical waveguide, 3- covering, 4- input face, 5- output face, the side 6-, 7- silicon substrate, the sharp side 8-, output end face of the 9- with angle, 10- scribing groove, 11- etch side, and 12- cuts side.
Specific embodiment
The present invention is further described through below in conjunction with drawings and the specific embodiments.
The batch production of optical chip is to exist on thousands of on a wafer with wafer (wafer) for basic process unit Ten thousand optical chips, it is therefore desirable to wafer be cut into separation to obtain simple grain optical chip.Wafer is first usually cut into strip (Bar), (in industry term, what strip referred to is to be formed by chip along the cutting of adjacent two column Chip Vertical, its length can To be the length of wafer or smaller, the simple grain optical chip not being separated from each other comprising a column.) be then further cut into Simple grain optical chip.Traditional dicing (cutting) system carries out scribing using high-speed rotating saw blade (saw blade), is by mechanical force Crystal column surface is acted directly on, stress damage can be generated by cut portion in wafer.In addition, saw blade is generally be directed to a certain specific The characteristic of material is designed optimization, but wafer is made of two or more material systems, therefore uses this saw Item carries out optical chip cutting and is easy to be generated optical chip chipping due to stress and optical chip is damaged, and then reduced product yield.
The present invention carries out deep etching by scribing position on wafer, cut through entire optical layer (including light waveguide-layer and Covering), formed scribing groove, allow scribing system only to etch wafer substrate, without influence optical layer, thus be effectively reduced due to Optical chip chipping caused by wafer is cut and optical chip are damaged.The detail of the program is described in lower Fig. 1 to Fig. 7, sufficiently Embody the advantage of the program.
For ease of description, defining the direction of propagation of the light in optical waveguide is z to plane is flat for xz where wafer upper surface Face.
Fig. 1 describes one and typically contains the semiconductor crystal wafer of countless simple grain optical chips.By to semiconductor crystal wafer Cutting or scribing are carried out to realize the separation of optical chip.Wafer is divided into numerous simple grain optical chip by the dash line of Fig. 1, these The position that dash line represents is the position of scribing system cutting crystal wafer.Industrially, cutting line is also commonly referred to as drawing simultaneously Film channel (dicing lanes).
For sun adjuster part, after wafer is cut into strip (Bar), it usually needs be polished directly.Polishing usually relates to And side is realized to grind one or two side of strip to similar mud, liquid comprising dusty material particle " optically smooth " (optically smooth).The size of the optically smooth scratch meaned on side or recess will be much smaller than Corresponding optical wavelength, or it is much smaller than 1 micron.And before optical fiber is coupled with optical chip, also usually require to optical chip One side carries out the polishing for the angle for having certain, usually polish with the state of Bar and then cut again, is dropped with this Echo reflection between low optical fiber and optical chip.In general, the angle of polishing is usually to spend (here with vertical direction in 8 to 12 Vertically mean that the upper surface of optical chip, lower surface are all an angle of 90 degrees, i.e., side is " rectangular ").In addition, in the another of optical chip A side usually requires to carry out a polishing close to 45 degree of angles.Signal light can be directly reflected into the upper table of optical chip in this way Face is received by optical detector.
Fig. 2 to Fig. 4 describes the schematic diagram of three kinds of simple grain optical chips.Optowire in Fig. 2 is by the light included in covering 3 Waveguide 2 constitutes (simple grain optical chip 1 includes optical waveguide 2 and the covering 3 for being wrapped in optical waveguide outer peripheral surface), and typical case includes input Face 4 and output face 5 (side).Input terminal receives optical signal, for example from fiber array, optical chip handles this optical signal, And the optical signal handled well is exported from output end.Sometimes, the input of optical chip, output port are in the same side of optical chip Face.On the whole, any side, the upper surface including optical chip all can serve as input port, output port, or simultaneously As input, output port.Optical chip side as input or output port usually requires to be polished, and realizes that optics is flat It is sliding.Side by polishing is generally termed " end face " (facet).Not by polishing, and without optics input or output end Side existing for mouthful is called " side " (edge).
Simple grain optical chip is shown along the schematic sectional view in the face xy in Fig. 3, includes typical material stacked structure.Optical layer For example light waveguide-layer and covering are deposited on the upper surface of wafer substrate.Typical wafer substrate is silicon, but according to application Difference, substrate of other materials such as quartz, indium phosphide, GaAs etc. can also use.Fig. 3 can also be used to describe defeated simultaneously Enter, output end face.
Simple grain optical chip is shown along the sectional schematic in the face yz in Fig. 4, in this drawing, the output end face 9 with angle Angle is polished close to 45 degree, causes side very sharp.This sharp side is very crisp, when scribing system is cut, in machine Fragmentation is easy under tool stress.
The strip comprising part optical chip is shown along the schematic sectional view in the face xy in Fig. 5.In Fig. 5, shown in sectional view 3 simple grain optical chips are shown.The strip can be cut into 3 individual light cores along the dash line shown in figure by scribing system Piece.As seen from the figure, dash line passes through optical glass layer and wafer substrate.In wafer dicing process, if optical glass material Rupture, then the optical property of optical chip will be affected, entire optical chip will be considered useless.Therefore, this It may be decreased the product yield of whole wafer, increase cost.
Key component of the invention is shown in Fig. 6.After wafer completes conventional production and processing step, according to light core Dicing lane (dicing lanes) pattern is processed into mask plate (mask) by piece scribing demand, the wafer table after completing processing Spin coating photoresist on layer (covering) is covered the transfer of dicing lane pattern on the photoresist on wafer surface layer by photoetching.Using dry The region that glue is sheltered that will not be photo-etched of method etching or wet etching selectivity performs etching, so that pattern is further transferred to Wafer surface layer, formation width are the scribing groove 10 of W, and W is greater than the saw blade (saw blade) that scribing system is used to cutting crystal wafer Width, and depth of groove is D, has directly cut through entire optical layer, until (width direction is the direction y, depth side to wafer substrate To for the direction x).When being cut to the wafer for having already passed through deep etching using scribing system, it is only necessary to be cut along groove Wafer substrate is just.Since saw blade width is less than recess width W, saw blade will not encounter optical layer, will not be by optical layer It is cut in wafer and introduces mechanical stress, optical chip chipping will not be generated and optical chip is damaged, and then promote optical chip yield.
Fig. 7 is shown on wafer using a simple grain optical chip after deep etching process cutting, it can be seen that optics The width of layer is less than the width of substrate.Scribing system forms wafer substrate side by cutting crystal wafer, but the side of optical layer While being by being formed after deep etching, the two is different.
An example being applied to after whole wafer using the method that deep etching forms dicing lane is shown in Fig. 8.In figure Dash line cutting position is shown.The width of the optical chip optical layer is less than the width of substrate 7, wherein 11 be etching side Side, 12 be cutting side.
According to the difference for the material that is etched, etched recesses can use accomplished in many ways on wafer, including reaction from Son etching or various wet etchings.By designing optical mask, allows on wafer the region for not needing to be etched opaque, need The place being etched keeps light transmission, so as to etch specific groove pattern on wafer.

Claims (7)

1. a kind of for improving the scribing lithographic method of optical chip cut quality, it is characterised in that: in preset Wafer Dicing road (dicinglane) it performing etching to form scribing groove on, the slot bottom of the scribing groove is wafer substrate upper surface, described stroke The width of piece groove is greater than the width of cutting saw blade.
2. according to claim 1 for improving the scribing lithographic method of optical chip cut quality, it is characterised in that: according to Optical chip structure designs dicing lane mask plate, and dicing lane pattern is transferred to wafer surface layer photoresist using dicing lane mask plate On.
3. according to claim 2 for improving the scribing lithographic method of optical chip cut quality, it is characterised in that: use Photoetching, dry etching or wet etching method form scribing groove.
4. a kind of production method of optical chip, which comprises the following steps:
Step 1: processing wafer, designs dicing lane mask plate according to optical chip structure;
Step 2: dicing lane is transferred on the photoresist of wafer surface layer by photoetching, perform etching that form scribing recessed along dicing lane Slot, the slot bottom of the scribing groove are wafer substrate upper surface, and the width of the scribing groove is greater than the width of cutting saw blade;
Step 3: depth direction cutting crystal wafer substrate of the control cutting saw blade along scribing groove.
5. the production method of optical chip according to claim 4, it is characterised in that: the cutting saw blade is that wafer substrate is special Use cutting saw blade.
6. the production method of optical chip according to claim 5, which is characterized in that the step 3 specifically:
3.1), control cutting saw blade forms bar along the depth direction cutting crystal wafer substrate of scribing groove;
3.2), the bar that cutting is formed is inputted and output end face polishes;
3.3) step 3.2) treated bar is cut again along the depth direction of scribing groove, forms simple grain optical chip.
7. a kind of optical chip, the optical layer including substrate and setting on substrate, the optical layer include light waveguide-layer (optical waveguide layer) and covering (cladding layer), it is characterised in that: the width of the optical layer is small In the width of substrate.
CN201910440226.6A 2019-05-24 2019-05-24 For improving the scribing etching of optical chip cut quality and the production method and optical chip of optical chip Pending CN110208905A (en)

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Publication number Priority date Publication date Assignee Title
CN112758885A (en) * 2020-12-25 2021-05-07 中国电子科技集团公司第十三研究所 Cutting method of MEMS (micro-electromechanical systems) special-shaped chip
CN113629165A (en) * 2020-05-07 2021-11-09 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
CN115295409A (en) * 2022-07-20 2022-11-04 武汉光谷信息光电子创新中心有限公司 Wafer scribing method

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CN109449120A (en) * 2018-09-29 2019-03-08 中国电子科技集团公司第十研究所 A method of optimization scribing quality
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Publication number Priority date Publication date Assignee Title
CN101137463A (en) * 2005-05-16 2008-03-05 宋健民 Superhard cutters and associated methods
CN102130238A (en) * 2010-12-29 2011-07-20 映瑞光电科技(上海)有限公司 Method for cutting sapphire substrate LED chip
CN103235364A (en) * 2013-04-28 2013-08-07 四川天邑康和通信股份有限公司 Chip cutting process of planar lightwave circuit splitter
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CN113629165A (en) * 2020-05-07 2021-11-09 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
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CN115295409A (en) * 2022-07-20 2022-11-04 武汉光谷信息光电子创新中心有限公司 Wafer scribing method

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Application publication date: 20190906