CN110197688B - Memristor circuit - Google Patents
Memristor circuit Download PDFInfo
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- CN110197688B CN110197688B CN201910325862.4A CN201910325862A CN110197688B CN 110197688 B CN110197688 B CN 110197688B CN 201910325862 A CN201910325862 A CN 201910325862A CN 110197688 B CN110197688 B CN 110197688B
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Abstract
The invention discloses a memristor circuit which comprises an input module, a single-chip microcomputer module U1, a switch module U2, a resistance network and a hysteresis control module U3. The input module is connected with the single chip microcomputer module U1 and is used for configuring the threshold voltage and the resistance value of the memristor; the singlechip module U1 is connected with the switch module U2 and is used for controlling the switch module U2 to realize the control of the threshold voltage and the resistance value of the memristor; the switch module U2 is respectively connected with the input end Vin, the singlechip module U1 and the resistor network, and is used for realizing selection of different channels of the resistor network according to a control instruction of the singlechip module U1; one end of the resistor network is connected with the switch module U2, and the other end of the resistor network is connected with the hysteresis control module U3 and used for outputting resistors with corresponding resistance values; the hysteresis control module U3 is connected with the resistor network and the ground and is used for simulating the generation of the bidirectional hysteresis characteristic curve of the memristor.
Description
Technical Field
The invention belongs to the technical field of circuit design, relates to a memristor circuit, and particularly relates to a hardware simulation circuit which meets the voltage and current relation of a memristor.
Background
The memristor is a two-end passive device for describing the relation between magnetic flux and electric charge, is a novel nonlinear resistor with a memory function, and the resistance of the resistor is determined by the direction and the quantity of the electric charge flowing through the resistor, so that the quantity of the electric charge flowing through the resistor at every moment can be memorized, and the memory property is realized. Due to the ultra-small size, extremely fast erasing speed, ultra-high erasing service life, multi-resistance state switching characteristics and good CMOS compatibility, the memristor has huge research potential in the directions of nonvolatile memories, large-scale integrated circuits, artificial neural networks, artificial intelligence and the like. The presence of memristors has a tremendous impact on digital circuits. Therefore, it is very important to explore the memristor equivalent model and to be practically applied to circuit design.
At present, although the research on equivalent circuits of memristors is successful, the overall research is mainly based on a simulation model. Few memristor equivalent circuits formed by hardware circuits are difficult to apply to actual circuits due to the complex principle; or because the circuit data error is large, the voltage and current characteristics of the actual memristor are difficult to accurately simulate. Therefore, the practical TiO simulated memristor equivalent circuit with simple and accurate principle is designed2Memristors will have important significance.
Disclosure of Invention
Aiming at the problems in the prior art and the research cost, the invention provides a memristor circuit which is prepared from a first resistor, a second resistor and a third resistorThe control of threshold and resistance is realized by simulating memristor by using relay and peripheral circuit and by using singlechip, thereby conveniently realizing TiO2The current-voltage characteristic of the memristor can replace an actual memristor to carry out experimental test and application research.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a memristor circuit comprises an input module, a single-chip microcomputer module U1, a switch module U2, a resistor network and a hysteresis control module U3, wherein the hysteresis control module U3 further comprises a first hysteresis control module U3-1 and a second hysteresis control module U3-2. The input module is connected with the single chip microcomputer module U1 and is used for configuring the threshold voltage and the resistance value of the memristor; the singlechip module U1 is connected with the switch module U2 and is used for controlling the switch module U2 to realize the control of the threshold voltage and the resistance value of the memristor; the switch module U2 is respectively connected with the input end Vin, the singlechip module U1 and the resistor network, and is used for realizing selection of different channels of the resistor network according to a control instruction of the singlechip module U1; one end of the resistor network is connected with the switch module U2, and the other end of the resistor network is connected with the hysteresis control module U3 and used for outputting resistors with corresponding resistance values; the hysteresis control module U3 is connected with the resistor network and the ground and is used for simulating the generation of the bidirectional hysteresis characteristic curve of the memristor.
Keys K1 and K2 in the input module are respectively connected with a 10 th pin and a 11 th pin of an STC89C51 chip in a singlechip module U1, and the other ends of the keys K1 and K2 are grounded.
The 39 th pin, the 38 th pin and the 37 th pin of the STC89C51 chip in the single chip microcomputer module U1 are respectively connected with the 11 th pin, the 10 th pin and the 9 th pin of the switch module U2CD 4051; and other pins of the singlechip chip are normally connected according to the minimum system module of the singlechip.
The resistor network comprises a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9, wherein one end of each resistor is connected with the hysteresis control module U3, and the other end of each resistor is connected with the switch module U2.
16 th pin V of switch module CD4051 chipThe DD and the 7 th pin VEE are respectively connected to a positive power supply V and a negative power supply VCCand-VCCThe 6 th pin and the 8 th pin are grounded, the 3 rd pin is connected with the input end Vin, the 1 st pin is connected with one end of a sixth resistor R6, the 2 nd pin is connected with one end of an eighth resistor R8, the 4 th pin is connected with one end of a ninth resistor R9, the 5 th pin is connected with one end of a seventh resistor R7, the 12 th pin is connected with one end of a fifth resistor R5, the 13 th pin is connected with one end of a second resistor R2, the 14 th pin is connected with one end of a third resistor R3, and the 15 th pin is connected with one end of a fourth resistor R4.
The hysteresis control module U3 takes an SRD-5VDC-SL-C type relay as a main device; the circuit of the first hysteresis control module U3-1 further comprises a D1 diode 4007, the anode of D1 is connected with the other end of the second resistor R2, the other end of the third resistor R3, the other end of the fourth resistor R4, the other end of the fifth resistor R5, the other end of the sixth resistor R6, the other end of the seventh resistor R7, the other end of the eighth resistor R8 and the other end of the ninth resistor R9, the cathode of D1 is connected with one end of the first resistor R1 and the 4 th pin of the relay, and the other end of the first resistor R1 is connected with the 1 st pin of the relay; the second hysteresis control module U3-2 circuit also comprises an SRD-5VDC-SL-C and a D2 diode 4007, the cathode of the D2 is connected with the other end of the second resistor R2, the other end of the third resistor R3, the other end of the fourth resistor R4, the other end of the fifth resistor R5, the other end of the sixth resistor R6, the other end of the seventh resistor R7, the other end of the eighth resistor R8 and the other end of the ninth resistor R9, the anode of the D2 is connected with one end of the eleventh resistor R11 and the 4 th pin of the relay, and the other end of the eleventh resistor R11 is connected with the 1 st pin of the relay; the 2 nd pin and the 5 th pin of the relay of the first hysteresis control module U3-1 and the second hysteresis control module U3-2 are grounded.
In the technical scheme, the memristor equivalent analog circuit with adjustable threshold voltage and resistance value and capable of being controlled by a single chip microcomputer is designed. The analog circuit comprises a hysteresis control module, an input module, a CD4051 switch chip and a single chip microcomputer chip, and is simple in structure. At present even in the future if a single nanoscale TiO is not available2In the case of memristive devices, to replace the actualThe memristor can be applied to related circuit design, and has great significance for characteristic application and field range research of the memristor.
Compared with the prior art, the invention realizes the analog circuit of the memristor, thereby conveniently realizing TiO2The current-voltage characteristic of the memristor can replace an actual memristor to carry out experimental test and application research. The invention mainly uses the hysteresis control module U3 relay coil to pull in and release the armature to change the contact to cause the current of the whole circuit to change, and simulates the actual TiO2The current-voltage characteristic of the memristive device is memorized. The hysteretic characteristic of the memristor is realized by using a relay and a peripheral circuit, wherein the first hysteretic control module U3-1 and the second hysteretic control module U3-2 mainly realize the acquisition of positive and negative half waves of an input signal and the generation of hystereses. The single chip microcomputer module realizes control over a switch chip through the input module, and different load channels are selected, so that different resistance values of the memristor model resistor are changed, the effect of changing the threshold value of the memristor is realized, and the memristor volt-ampere characteristic of the analog circuit is changed.
Drawings
Fig. 1 is a block diagram of the circuit configuration of the present invention.
FIG. 2 is a schematic diagram of an equivalent analog circuit of the memristor of the present invention.
FIG. 3 is a test diagram of an equivalent simulation hardware circuit of a memristor
Detailed Description
The following describes an example of the present invention in detail with reference to the accompanying drawings.
As shown in fig. 1, the functional block diagram of the memristor circuit of the present invention includes an input module, a single-chip microcomputer module U1, a resistance network, a switch module U2, and a hysteresis control module U3. The first hysteretic control module U3-1 and the second hysteretic control module U3-2 in the hysteretic control module U3 cooperate with a load resistor in the resistor network to generate a bidirectional hysteretic unit with switching characteristics. The single chip microcomputer module U1 inputs signals to the single chip microcomputer through keys in the input module, and then acts on the switch chip, so as to adjust the load resistance value in the resistance network. The four modules are common components in a laboratory, are easy to realize on a hardware circuit, and can realize the memristor simulation circuit with a simple circuit structure and controllable threshold and resistance values.
Fig. 2 shows a schematic circuit diagram of the memristor circuit of the present invention, wherein keys K1 and K2 in the input module are respectively connected to the 10 th pin and the 11 th pin of an STC89C51 chip in a single chip microcomputer U1, and the other ends of the keys K1 and K2 are grounded.
The 39 th pin, the 38 th pin and the 37 th pin of the STC89C51 chip are respectively connected with the 11 th pin, the 10 th pin and the 9 th pin of the switch module U2CD 4051.
The resistor network comprises a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9, wherein one end of each resistor is connected with the hysteresis control module U3, and the other end of each resistor is connected with the switch module U2.
The 16 th pin VDD and the 7 th pin VEE of the CD4051 chip are respectively connected to a positive power supply V and a negative power supply VCCand-VCCThe 6 th pin and the 8 th pin are grounded, the 3 rd pin is connected with the input end Vin, the 1 st pin is connected with one end of a sixth resistor R6, the 2 nd pin is connected with one end of an eighth resistor R8, the 4 th pin is connected with one end of a ninth resistor R9, the 5 th pin is connected with one end of a seventh resistor R7, the 12 th pin is connected with one end of a fifth resistor R5, the 13 th pin is connected with one end of a second resistor R2, the 14 th pin is connected with one end of a third resistor R3, and the 15 th pin is connected with one end of a fourth resistor R4.
The circuit of a first hysteresis control module U3-1 of the hysteresis control module U3 comprises an SRD-5VDC-SL-C type relay and a D1 diode 4007, wherein the anode of the D1 is connected with the other end of a second resistor R2, the other end of a third resistor R3, the other end of a fourth resistor R4, the other end of a fifth resistor R5, the other end of a sixth resistor R6, the other end of a seventh resistor R7, the other end of an eighth resistor R8 and the other end of a ninth resistor R9, the cathode of the D1 is connected with one end of a first resistor R1 and a 4 th pin of the relay, and the other end of the first resistor R1 is connected with a 1 st pin of the relay.
The second hysteresis control module U3-2 circuit comprises an SRD-5VDC-SL-C type relay and a D2 diode 4007, wherein the cathode of D2 is connected with the other end of a second resistor R2, the other end of a third resistor R3, the other end of a fourth resistor R4, the other end of a fifth resistor R5, the other end of a sixth resistor R6, the other end of a seventh resistor R7, the other end of an eighth resistor R8 and the other end of a ninth resistor R9, the anode of D2 is connected with one end of an eleventh resistor R11 and a 4 th pin of the relay, and the other end of the eleventh resistor R11 is connected with a 1 st pin of the relay; the 2 nd pin and the 5 th pin of the relay of the first hysteresis control module U3-1 and the second hysteresis control module U3-2 are grounded.
The working principle of the circuit is as follows:
the first hysteresis control module U3-1 in the hysteresis control modules U3 converts the signal input to the 4 th pin of the relay into a half-wave sinusoidal signal through the diode D1. Under the drive of a half-wave signal, a relay coil works, a first resistor R1 passes through the interior of the relay and is connected in parallel with two paths from a 1 st pin to a 2 nd pin to the ground and from a 4 th pin to a 5 th pin to the ground, and the coil resistor of the relay is 70 ohms, so that the overall resistance value of the whole first hysteresis control module U3-1 is about 65 ohms after the parallel connection. As known by the relay workbook, when an input signal is greater than 3.75V, the electromagnet coil attracts the armature, so that the internal contact of the relay is changed from the original 2 nd pin to the 3 rd pin, that is, the internal initial connection of the 1 st pin of the U3-1 unit relay shown in FIG. 2, which is connected with the 2 nd pin, is changed into the connection of the 1 st pin and the 3 rd pin, so that the U3-1 unit is changed from an initial parallel circuit to a path which only flows through the coil to the ground. When the input signal is less than 0.5V voltage, the electromagnet coil of the relay can not firmly attract the armature, so that after a very short time, the contact returns to the original position, and the circuit returns to the initial state. A sine signal with the amplitude of 5V and the frequency of 100HZ is input through an input end Vin, and the current of the whole circuit is changed due to the process that a relay coil in the hysteresis control module U3-1 is attracted to release an armature to change a contact, so that the forward hysteresis characteristic is generated. If the proper load resistance value is matched, the frequency of the input signal of the input end Vin can be improved. The second hysteretic control module U3-2 has the same principle as the first hysteretic control module U3-1, and will generate reverse hysteretic characteristics under the action of the diode D2.
Fig. 3(a), (b), (c) are graphs of the test results obtained when the values of the load resistances in the resistor network are gradually increased. Therefore, the load resistance value in the resistance network is changed through the control of the single chip microcomputer, the function of adjusting the change of the high-low resistance value of the memristor is achieved, and meanwhile the effect of changing the threshold value can be achieved. On the basis of the module, if the 4 th pin of the relay is connected into a certain adjustable resistance value, the adjusting effect can still be achieved.
The single chip microcomputer module U1 and the switch module U2 play a role in adjusting the threshold value and the resistance value of the memristor in the whole circuit. The 39 th pin, the 38 th pin and the 37 th pin of the STC89C51 chip are respectively connected with the 11 th pin, the 10 th pin and the 9 th pin of the CD4051 switch chip, and after a key is pressed down, the singlechip selects a CD4051 switch chip channel through the 39 th pin, the 38 th pin and the 37 th pin under the action of a program so as to adjust the load resistance value of an access circuit in the resistance network. When the load resistance value changes, the current of the whole circuit and the voltage of the hysteresis module will change, so that the hysteresis characteristic of the relay module is influenced, and the effect of adjusting the threshold voltage and the resistance value is realized on the whole circuit. 16 th pin V of switch chip CD4051CCPin 7-VCCAt this time, voltages 5V and-5V are inputted, respectively, but the voltage-V is inputtedCC、VCCIs also controlled by the input signal voltage of pin 3 Out/In of the CD4051 chip, i.e. pin 16VCCPin 7-VCCThe input voltage must be equal to or greater than the amplitude voltage of the input signal.
It should be appreciated by those skilled in the art that the above embodiments are only used for verifying the present invention, and are not to be construed as limiting the present invention, and that the changes and modifications of the above embodiments are within the scope of the present invention.
Claims (5)
1. A memristor circuit is characterized by comprising an input module, a single-chip microcomputer module U1, a switch module U2, a resistor network and a hysteresis control module U3, wherein the hysteresis control module U3 further comprises a first hysteresis control module U3-1 and a second hysteresis control module U3-2; the input module is connected with the single chip microcomputer module U1 and is used for configuring the threshold voltage and the resistance value of the memristor; the singlechip module U1 is connected with the switch module U2 and is used for controlling the switch module U2 to realize the control of the threshold voltage and the resistance value of the memristor; the switch module U2 is respectively connected with the input end Vin, the singlechip module U1 and the resistor network, and is used for realizing selection of different channels of the resistor network according to a control instruction of the singlechip module U1; one end of the resistor network is connected with the switch module U2, and the other end of the resistor network is connected with the hysteresis control module U3, and the resistor network is used for outputting a resistor with a corresponding resistance value according to the state of the switch module U2; the hysteresis control module U3 is connected with the resistor network and the ground and is used for simulating the generation of a bidirectional hysteresis characteristic curve of the memristor;
the hysteresis control module U3 is implemented using a relay.
2. The memristor circuit of claim 1, wherein the hysteretic control module U3 employs an SRD-5VDC-SL-C type relay.
3. The memristor circuit according to claim 1, wherein the single-chip microcomputer module U1 adopts an STC89C51 chip.
4. The memristor circuit of claim 1, wherein the switch module U2 is implemented as a CD4051 chip.
5. The memristor circuit according to claim 1, wherein keys K1 and K2 in the input module are respectively connected with the 10 th pin and the 11 th pin of an STC89C51 chip in a single chip microcomputer module U1, and the other ends of the keys K1 and K2 are grounded;
the 39 th pin, the 38 th pin and the 37 th pin of the STC89C51 chip are respectively connected with the 11 th pin, the 10 th pin and the 9 th pin of the switch module U2CD 4051;
the resistor network comprises a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8 and a ninth resistor R9, wherein one end of each resistor is connected with the hysteresis control module U3, and the other end of each resistor is connected with the switch module U2;
CD40the 16 th pin VDD and the 7 th pin VEE of the 51 chip are respectively connected to a positive power supply V and a negative power supply VCCand-VCCThe 6 th pin and the 8 th pin are grounded, the 3 rd pin is connected with the input end Vin, the 1 st pin is connected with one end of a sixth resistor R6, the 2 nd pin is connected with one end of an eighth resistor R8, the 4 th pin is connected with one end of a ninth resistor R9, the 5 th pin is connected with one end of a seventh resistor R7, the 12 th pin is connected with one end of a fifth resistor R5, the 13 th pin is connected with one end of a second resistor R2, the 14 th pin is connected with one end of a third resistor R3, and the 15 th pin is connected with one end of a fourth resistor R4;
the circuit of the first hysteresis control module U3-1 comprises an SRD-5VDC-SL-C type relay and a D1 diode 4007, wherein the anode of D1 is connected with the other end of a second resistor R2, the other end of a third resistor R3, the other end of a fourth resistor R4, the other end of a fifth resistor R5, the other end of a sixth resistor R6, the other end of a seventh resistor R7, the other end of an eighth resistor R8 and the other end of a ninth resistor R9, the cathode of D1 is connected with one end of a first resistor R1 and a 4 th pin of the relay, and the other end of the first resistor R1 is connected with a 1 st pin of the relay;
the second hysteresis control module U3-2 circuit comprises an SRD-5VDC-SL-C type relay and a D2 diode 4007, wherein the cathode of D2 is connected with the other end of a second resistor R2, the other end of a third resistor R3, the other end of a fourth resistor R4, the other end of a fifth resistor R5, the other end of a sixth resistor R6, the other end of a seventh resistor R7, the other end of an eighth resistor R8 and the other end of a ninth resistor R9, the anode of D2 is connected with one end of an eleventh resistor R11 and a 4 th pin of the relay, and the other end of the eleventh resistor R11 is connected with a 1 st pin of the relay; the 2 nd pin and the 5 th pin of the relay of the first hysteresis control module U3-1 and the second hysteresis control module U3-2 are grounded.
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| CN201910325862.4A CN110197688B (en) | 2019-04-23 | 2019-04-23 | Memristor circuit |
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| CN103219983B (en) * | 2013-04-16 | 2015-09-16 | 杭州电子科技大学 | A kind of memristor equivalent simulation circuit |
| CN103297025B (en) * | 2013-05-02 | 2016-01-20 | 杭州电子科技大学 | A kind of memristor emulator |
| CN103324979B (en) * | 2013-06-28 | 2017-02-01 | 电子科技大学 | Programmable threshold value circuit |
| CN103729518A (en) * | 2014-01-08 | 2014-04-16 | 电子科技大学 | Simple memristor emulator |
| CN108109654A (en) * | 2016-11-25 | 2018-06-01 | 李晓兵 | A kind of programmable analog circuit based on memristor |
| CN108736559A (en) * | 2017-04-24 | 2018-11-02 | 西华大学 | A kind of solar storage battery charging-discharging controller based on memristor |
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