CN110197688A - A kind of memristor circuit - Google Patents
A kind of memristor circuit Download PDFInfo
- Publication number
- CN110197688A CN110197688A CN201910325862.4A CN201910325862A CN110197688A CN 110197688 A CN110197688 A CN 110197688A CN 201910325862 A CN201910325862 A CN 201910325862A CN 110197688 A CN110197688 A CN 110197688A
- Authority
- CN
- China
- Prior art keywords
- resistance
- pin
- module
- control module
- hysteresis control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
Landscapes
- Relay Circuits (AREA)
Abstract
The invention discloses a kind of memristor circuit, including input module, one-chip computer module U1, switch module U2, resistor network, hysteresis control module U3.Wherein, input module is connected with one-chip computer module U1, for configuring the threshold voltage and resistance value of memristor；One-chip computer module U1 is connected with switch module U2, and threshold voltage and the resistance value control to memristor are realized for control switch module U2；Switch module U2 is connected with input terminal Vin, one-chip computer module U1 and resistor network respectively, for realizing the selection to resistor network difference channel according to the control instruction of one-chip computer module U1；One end of resistor network is connected with switch module U2, and the other end is connected with hysteresis control module U3, for exporting the resistance of respective resistance values；Hysteresis control module U3 and resistor network, connect, for simulating the generation of the two-way hysteretic characteristic curve of memristor.
Description
Technical field
The invention belongs to technical field of circuit design, are related to a kind of memristor circuit, and in particular to realization meets memristor
The hardware simulation circuit of voltage, current relationship.
Background technique
Memristor is the two end passive devices for describing magnetic flux and charge relationship, is a kind of with the new of memory function
Type nonlinear resistance, its resistance sizes are determined by the direction and quantity for flowing through its internal charge, so can remember all the time
The quantity of electric charge flowed through, to have Memorability.Due to possessing extra small size, the erasable and writing speed being exceedingly fast, the erasable longevity of superelevation
Life, more resistance state switching characteristics and good CMOS compatibility, memristor is in nonvolatile memory, large scale integrated circuit, people
There is huge research potential in the directions such as artificial neural networks and artificial intelligence.The appearance of memristor has digital circuit huge
It influences.Therefore explore memristor equivalent model and can practice into circuit design, it appears it is particularly important.
Although overall study is based on simulation model currently, existing memristor equivalent circuit research success.Few is several
A memristor equivalent circuit being made of hardware circuit causes to be difficult to apply in actual circuit but because its principle is complex；
Or because circuit data error is larger, it is difficult to voltage, the current characteristics of the accurate practical memristor of simulation.Therefore, one kind is designed
Principle is simple, accurate memristor equivalent circuit simulates actual TiO2Memristor will have great importance.
Summary of the invention
For problem present on present technology and research cost, the present invention provides a kind of memristor circuit, using after
Electric appliance and peripheral circuit simulation memristor and by the controllable of chip microcontroller threshold value and resistance value, to conveniently realize TiO2
The C-V characteristic of memristor can replace practical memristor to carry out experiment test and application study.
The technical solution adopted for solving the technical problem of the present invention is as follows:
A kind of memristor circuit, including input module, one-chip computer module U1, switch module U2, resistor network, hysteresis control
Module U3, wherein hysteresis control module U3 further comprises the first hysteresis control module U3-1 and the second hysteresis control module U3-
2.Input module is connected with one-chip computer module U1, for configuring the threshold voltage and resistance value of memristor；One-chip computer module U1 with
Switch module U2 is connected, and threshold voltage and the resistance value control to memristor are realized for control switch module U2；Switch
Module U2 is connected with input terminal Vin, one-chip computer module U1 and resistor network respectively, for the control according to one-chip computer module U1
The selection to resistor network difference channel is realized in instruction；One end of resistor network is connected with switch module U2, the other end with it is stagnant
It returns control module U3 to be connected, for exporting the resistance of respective resistance values；Hysteresis control module U3 and resistor network, connect, use
In the generation of the simulation two-way hysteretic characteristic curve of memristor.
Key K1, K2 in the input module respectively with the 10th pin of STC89C51 chip in one-chip computer module U1,
The connection of 11st pin, the other end ground connection of key K1, K2.
The 39th pin, the 38th pin, the 37th pin of STC89C51 chip are opened with U2 respectively in the one-chip computer module U1
The 11st pin, the 10th pin, the 9th pin for closing module CD4051 are connected；Other pins of singlechip chip are according to single-chip microcontroller minimum
System module normally connect.
The resistor network includes second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th electricity
R6, the 7th resistance R7, the 8th resistance R8, the 9th resistance R9 are hindered, one end of all of above resistance is connected with hysteresis control module U3,
The other end accesses switch module U2.
The 16th pin VDD and the 7th pin VEE of the switch module CD4051 chip are respectively connected to positive-negative power VCCWith-
VCC, the 6th pin, the 8th pin ground connection, the 3rd pin meets input terminal Vin, and the 1st pin is connect with one end of the 6th resistance R6, and the 2nd draws
Foot is connect with one end of the 8th resistance R8, and the 4th pin is connect with one end of the 9th resistance R9, the 5th pin and the 7th resistance R7's
One end connection, the 12nd pin are connect with one end of the 5th resistance R5, and the 13rd pin is connect with one end of second resistance R2, and the 14th draws
Foot is connect with one end of 3rd resistor R3, and the 15th pin is connect with one end of the 4th resistance R4.
The hysteresis control module U3 is using SRD-5VDC-SL-C type relay as main devices；Wherein the first hysteresis controls
Also include D1 diode 4007 in module U3-1 circuit, the anode and the other end of second resistance R2 of D1,3rd resistor R3 it is another
One end, the other end of the 4th resistance R4, the other end of the 5th resistance R5, the other end of the 6th resistance R6, the 7th resistance R7 it is another
One end of the other end connection of one end, the other end of the 8th resistance R8, the 9th resistance R9, the cathode of D1 and first resistor R1, after
The connection of the 4th pin of electric appliance, the other end of first resistor R1 are connect with the 1st pin of relay；Second hysteresis control module U3-2 electricity
It equally include SRD-5VDC-SL-C and D2 diode 4007, the cathode of D2 and the other end, the 3rd resistor of second resistance R2 in road
The other end of R3, the other end of the 4th resistance R4, the other end of the 5th resistance R5, the 6th resistance R6 the other end, the 7th resistance
The other end connection of the other end of R7, the other end of the 8th resistance R8, the 9th resistance R9, anode and the eleventh resistor R11 of D2
One end, relay the connection of the 4th pin, the 1st pin of the other end of eleventh resistor R11 and relay connects；First is stagnant
Return the 2nd pin of relay, the 5th pin ground connection of control module U3-1 and the second hysteresis control module U3-2.
In above-mentioned technical proposal, the present invention devises that one kind can be realized monolithic processor controlled threshold voltage and resistance value can
Tune type memristor equivalent simulation circuit.The analog circuit contains hysteresis control module, input module, a CD4051 switch core
Piece, a singlechip chip, construction are succinct.If single nanoscale TiO even can not be obtained in future at present2Memory resistor
In the case where, for that can be applied in related circuit design instead of actual memristor, to the characteristic application of memristor and field
Range research is of great significance.
Compared with prior art, the present invention realizes the analog circuit of memristor, so as to conveniently realize TiO2Memristor
C-V characteristic, practical memristor can be replaced to carry out testing test and application study.The present invention is mainly with hysteresis control module U3
The process that middle relay coil actuation release armature carries out transformation contact causes the electric current of entire circuit to change, and simulation is practical
TiO2The C-V characteristic of memory resistor.The hysteretic characteristic that memristor is realized using relay and peripheral circuit, wherein the first hysteresis
Control module U3-1 and the second hysteresis control module U3-2 is mainly realized to the acquisition of the positive and negative half-wave of input signal and hysteresis generation.
One-chip computer module realizes the control to switch chip by input module, different load channels is selected, to change memristor
The different resistance values of model resistance realize the effect of memristor changes of threshold, change the memristor C-V characteristic of analog circuit.
Detailed description of the invention
Fig. 1 is circuit structure block diagram of the invention.
Fig. 2 is memristor equivalent simulation circuit schematic diagram of the present invention.
Fig. 3 is memristor equivalent simulation hardware circuit test chart of the present invention
Specific embodiment
It elaborates with reference to the accompanying drawing to present example.
As shown in Figure 1, the functional block diagram of memristor circuit of the present invention, including input module, one-chip computer module U1, resistance net
Network, switch module U2 and hysteresis control module U3 composition.The first hysteresis control module U3-1 in hysteresis control module U3 and
Two hysteresis control module U3-2 cooperate the load resistance in resistor network to generate the two-way hysteresis unit with switching characteristic.Monolithic
Machine module U1 is then then to act on switch chip to single-chip microcontroller by the key-press input signal in input module, so as to adjust
Load resistance value in resistor network.Above four modules are the common component in laboratory, are easier to realize on hardware circuit, energy
It is enough that threshold value and resistance value controllable type memristor analog circuit are realized with a kind of simple circuit structure.
It is illustrated in figure 2 the circuit diagram of memristor circuit of the present invention, wherein key K1, K2 points in input module
It is not connect with the 10th pin, the 11st pin of STC89C51 chip in one-chip computer module U1, the other end ground connection of key K1, K2.
39th pin of STC89C51 chip, the 38th pin, the 37th pin respectively with U2 switch module CD4051 the 11st
Pin, the 10th pin, the 9th pin are connected.
Resistor network includes second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6,
One end of seven resistance R7, the 8th resistance R8, the 9th resistance R9, all of above resistance are connected with hysteresis control module U3, the other end
Access switch module U2.
16th pin VDD of CD4051 chip and the 7th pin VEE are respectively connected to positive-negative power VCCWith-VCC, the 6th pin,
8th pin ground connection, the 3rd pin meet input terminal Vin, and the 1st pin is connect with one end of the 6th resistance R6, the 2nd pin and the 8th electricity
One end connection of R8 is hindered, the 4th pin is connect with one end of the 9th resistance R9, and the 5th pin is connect with one end of the 7th resistance R7, the
12 pins are connect with one end of the 5th resistance R5, and the 13rd pin is connect with one end of second resistance R2, the 14th pin and third electricity
One end connection of R3 is hindered, the 15th pin is connect with one end of the 4th resistance R4.
In the first hysteresis control module U3-1 circuit of hysteresis control module U3 comprising SRD-5VDC-SL-C type relay,
D1 diode 4007, D1 anode and the other end of second resistance R2, the other end of 3rd resistor R3, the 4th resistance R4 it is another
End, the other end of the 5th resistance R5, the other end of the 6th resistance R6, the other end of the 7th resistance R7, the 8th resistance R8 it is another
The other end connection at end, the 9th resistance R9, the cathode of D1 are connect with one end of first resistor R1, the 4th pin of relay, the first electricity
The other end of resistance R1 is connect with the 1st pin of relay.
Second hysteresis control module U3-2 circuit includes SRD-5VDC-SL-C type relay, D2 diode 4007, and D2's is negative
The other end of pole and second resistance R2, the other end of 3rd resistor R3, the other end of the 4th resistance R4, the 5th resistance R5 it is another
End, the other end of the 6th resistance R6, the other end of the 7th resistance R7, the other end of the 8th resistance R8, the 9th resistance R9 it is another
The anode of end connection, D2 is connect with the 4th pin of one end of eleventh resistor R11, relay, and eleventh resistor R11's is another
End is connect with the 1st pin of relay；The relay the 2nd of first hysteresis control module U3-1 and the second hysteresis control module U3-2
Pin, the 5th pin ground connection.
The working principle of foregoing circuit is as follows:
The first hysteresis control module U3-1 in hysteresis control module U3, draws input relay the 4th by diode D1
The signal of foot is changed into half-wave sinusoidal.Under the driving of half-wave signa, relay coil work, first resistor R1 is through relay
The two articles of path in parallel in ground are arrived with the 4th pin to the 5th pin, due to relay again to ground by the 1st pin to the 2nd pin again inside device
Device coil resistance itself is 70 Europe, and entire first hysteresis control module U3-1 whole resistance value after parallel connection is about 65 Europe or so.By
Relay operation manuals know that, when input signal is greater than 3.75V, electromagnet coil attracts armature, and relay inner contact occurs
Transformation, is changed into the 3rd pin, i.e. the 1st pin of U3-1 unit relay shown in Fig. 2 and the 2nd pin phase by the 2nd original pin
Inside initial connection even is changed into the 1st pin and the 3rd pin is connected, and is transformed into U3-1 unit only by initial parallel circuit
An access of the flowing through coil to ground.When input signal is less than 0.5V voltage, the electromagnet coil of relay can not securely be inhaled
Draw armature, so contact is returned to original position by the very short time, circuit is made to be returned to original state.Pass through input terminal Vin
Input amplitude is 5V, and frequency is the sinusoidal signal of 100HZ, in hysteresis control module U3-1 relay coil be attracted release armature into
The process of row transformation contact causes the electric current of entire circuit to change, to generate positive hysteretic characteristic.If appropriate mix
Load resistance value can be improved the frequency of input terminal Vin input signal.Second hysteresis control module U3-2 principle and the first hysteresis
Control module U3-1 is identical, will generate reversed hysteretic characteristic under the action of diode D2.
Fig. 3 (a), (b), the test result figure obtained when (c) being gradually increased for the load resistance value in resistor network.Therefore logical
The size that single-chip microcontroller control changes the load resistance value in resistor network is crossed, realizes the function for adjusting the height change in resistance of this memristor
Can, while also can achieve the effect of changes of threshold.In this module basis, if the access of the 4th pin of relay is certain
Adjustable electric resistance value still is able to reach regulating effect.
One-chip computer module U1 and switch module U2 plays the work for adjusting memristor threshold value and resistance value in entire circuit
With.39th pin of STC89C51 chip, the 38th pin, the 37th pin respectively with the 11st pin of CD4051 switch chip,
10 pins and the connection of the 9th pin, after pressing the button, single-chip microcontroller passes through the 39th pin, the 38th pin, the under the action of program
37 pins select CD4051 switch chip channel, and the load resistor value that circuit is accessed in resistor network is adjusted with this.When load hinders
When value changes, the electric current of integrated circuit and the voltage of hysteresis module will change, with and influence relay module
Hysteretic characteristic realizes the effect of adjustable threshold voltage and resistance value on integrated circuit.The 16th pin of switch chip CD4051
VCC, the 7th pin-VCCInput voltage 5V and -5V, but input voltage-V are distinguished at this timeCC、VCCValue also drawn by CD4051 chip the 3rd
The applied signal voltage of foot Out/In controls, i.e. the 16th pin VCC, the 7th pin-VCCInput voltage, which has to be larger than, is equal to input letter
Number amplitude voltage.
Those skilled in the art are it should be appreciated that above embodiments are intended merely to the verifying present invention, and not make
For limitation of the invention, as long as within the scope of the invention, will all fall in the present invention to variation, the deformation of above embodiments
Protection scope in.
Claims (5)
1. a kind of memristor circuit, which is characterized in that including input module, one-chip computer module U1, switch module U2, resistance net
Network, hysteresis control module U3, wherein hysteresis control module U3 further comprises the first hysteresis control module U3-1 and the second hysteresis
Control module U3-2；Input module is connected with one-chip computer module U1, for configuring the threshold voltage and resistance value of memristor；Monolithic
Machine module U1 is connected with switch module U2, and threshold voltage and the resistance value control of memristor are realized for control switch module U2
System；Switch module U2 is connected with input terminal Vin, one-chip computer module U1 and resistor network respectively, for according to one-chip computer module
The control instruction of U1 realizes the selection to resistor network difference channel；One end of resistor network is connected with switch module U2,
The other end is connected with hysteresis control module U3, for the resistance according to the state output respective resistance values of switch module U2；Hysteresis
Control module U3 and resistor network and connect, for simulating the generation of the two-way hysteretic characteristic curve of memristor；
Hysteresis control module U3 is realized using relay.
2. memristor circuit according to claim 1, which is characterized in that hysteresis control module U3 uses SRD-5VDC-SL-C
Type relay.
3. memristor circuit according to claim 1, which is characterized in that one-chip computer module U1 uses STC89C51 chip.
4. memristor circuit according to claim 1, which is characterized in that U2 switch module uses CD4051 chip.
5. memristor circuit according to claim 1, which is characterized in that key K1, K2 in input module respectively with monolithic
10th pin of STC89C51 chip, the connection of the 11st pin in machine module U1, the other end ground connection of key K1, K2；
39th pin of STC89C51 chip, the 38th pin, the 37th pin respectively with the 11st pin of U2 switch module CD4051,
10th pin, the 9th pin are connected；
Resistor network includes second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th electricity
R7, the 8th resistance R8, the 9th resistance R9 are hindered, one end of all of above resistance is connected with hysteresis control module U3, other end access
Switch module U2；
16th pin VDD of CD4051 chip and the 7th pin VEE are respectively connected to positive-negative power VCCWith-VCC, the 6th pin, the 8th are drawn
Foot ground connection, the 3rd pin meets input terminal Vin, and the 1st pin is connect with one end of the 6th resistance R6, the 2nd pin and the 8th resistance R8's
One end connection, the 4th pin are connect with one end of the 9th resistance R9, and the 5th pin is connect with one end of the 7th resistance R7, the 12nd pin
It is connect with one end of the 5th resistance R5, the 13rd pin is connect with one end of second resistance R2, and the 14th pin is with 3rd resistor R3's
One end connection, the 15th pin are connect with one end of the 4th resistance R4；
It include SRD-5VDC-SL-C type relay, D1 diode 4007, the anode of D1 in first hysteresis control module U3-1 circuit
With the other end of second resistance R2, the other end of 3rd resistor R3, the other end of the 4th resistance R4, the 5th resistance R5 it is another
End, the other end of the 6th resistance R6, the other end of the 7th resistance R7, the other end of the 8th resistance R8, the 9th resistance R9 it is another
End connection, the cathode of D1 are connect with one end of first resistor R1, the 4th pin of relay, the other end and relay of first resistor R1
The connection of the 1st pin of device；
Second hysteresis control module U3-2 circuit includes SRD-5VDC-SL-C type relay, D2 diode 4007, the cathode of D2 with
The other end of second resistance R2, the other end of 3rd resistor R3, the other end of the 4th resistance R4, the 5th resistance R5 the other end,
The other end of 6th resistance R6, the other end of the 7th resistance R7, the other end of the 8th resistance R8, the 9th resistance R9 the other end connect
Connect, D2 anode connect with the 4th pin of one end of eleventh resistor R11, relay, the other end of eleventh resistor R11 and
1st pin of relay connects；The relay the 2nd of first hysteresis control module U3-1 and the second hysteresis control module U3-2 draw
Foot, the 5th pin ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910325862.4A CN110197688B (en) | 2019-04-23 | 2019-04-23 | Memristor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910325862.4A CN110197688B (en) | 2019-04-23 | 2019-04-23 | Memristor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110197688A true CN110197688A (en) | 2019-09-03 |
| CN110197688B CN110197688B (en) | 2020-10-16 |
Family
ID=67752076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910325862.4A Active CN110197688B (en) | 2019-04-23 | 2019-04-23 | Memristor circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110197688B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112910457A (en) * | 2021-01-21 | 2021-06-04 | 西南大学 | Memristor-based data selector and IC topological structure thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8113437B2 (en) * | 2009-12-23 | 2012-02-14 | Hynix Semiconductor, Inc. | RFID device with memory unit having memristor characteristics |
| CN103219983A (en) * | 2013-04-16 | 2013-07-24 | 杭州电子科技大学 | Memristor equivalent simulation circuit |
| CN103297025A (en) * | 2013-05-02 | 2013-09-11 | 杭州电子科技大学 | Memristor emulator |
| CN103324979A (en) * | 2013-06-28 | 2013-09-25 | 电子科技大学 | Programmable threshold value circuit |
| CN103729518A (en) * | 2014-01-08 | 2014-04-16 | 电子科技大学 | Simple memristor emulator |
| US9129676B2 (en) * | 2009-07-31 | 2015-09-08 | William Marsh Rice University | Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof |
| CN108109654A (en) * | 2016-11-25 | 2018-06-01 | 李晓兵 | A kind of programmable analog circuit based on memristor |
| CN108736559A (en) * | 2017-04-24 | 2018-11-02 | 西华大学 | A kind of solar storage battery charging-discharging controller based on memristor |
-
2019
- 2019-04-23 CN CN201910325862.4A patent/CN110197688B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9129676B2 (en) * | 2009-07-31 | 2015-09-08 | William Marsh Rice University | Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof |
| US8113437B2 (en) * | 2009-12-23 | 2012-02-14 | Hynix Semiconductor, Inc. | RFID device with memory unit having memristor characteristics |
| CN103219983A (en) * | 2013-04-16 | 2013-07-24 | 杭州电子科技大学 | Memristor equivalent simulation circuit |
| CN103297025A (en) * | 2013-05-02 | 2013-09-11 | 杭州电子科技大学 | Memristor emulator |
| CN103324979A (en) * | 2013-06-28 | 2013-09-25 | 电子科技大学 | Programmable threshold value circuit |
| CN103729518A (en) * | 2014-01-08 | 2014-04-16 | 电子科技大学 | Simple memristor emulator |
| CN108109654A (en) * | 2016-11-25 | 2018-06-01 | 李晓兵 | A kind of programmable analog circuit based on memristor |
| CN108736559A (en) * | 2017-04-24 | 2018-11-02 | 西华大学 | A kind of solar storage battery charging-discharging controller based on memristor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112910457A (en) * | 2021-01-21 | 2021-06-04 | 西南大学 | Memristor-based data selector and IC topological structure thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110197688B (en) | 2020-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106991221A (en) | A kind of sectional broken line model based on IGBT device transient physical process | |
| CN109302279A (en) | A kind of the memristor chaotic model and circuit of four-winged chaotic attractor rotation | |
| CN109343370A (en) | A kind of space power system controller dynamic environment analogue system and method | |
| CN110197688A (en) | A kind of memristor circuit | |
| CN101867192B (en) | Reactive compensation control simulation test system | |
| Liu et al. | Energy and dynamic analysis of quasi-static toggling mechanical energy harvester | |
| CN206620051U (en) | A kind of multi input high-gain Z source converters based on switching capacity unit | |
| CN105846990A (en) | Improved normative Chua's chaotic circuit | |
| CN110414118A (en) | A kind of Boost modeling method and application based on separate type modeling | |
| CN109473136A (en) | Remember body drive | |
| CN107064781A (en) | A kind of simple resistor network automatic test approach | |
| Palmintier et al. | Representative day selection using statistical bootstrapping for accelerating annual distribution simulations | |
| CN110209065A (en) | MMC power module level fault and protection logic dynamic simulation system and method | |
| CN204480250U (en) | Variable resistor simulation modeling circuit in a kind of RRAM storage unit | |
| CN206975897U (en) | A kind of memristor physical model characteristic demonstration device | |
| CN106877656A (en) | A kind of multi input high-gain Z source converters based on switching capacity unit | |
| Wang et al. | Research on Smart Home Assistance Control Model Based on Machine Learning | |
| CN104636548B (en) | Variable resistor simulation modeling circuit in a kind of RRAM storage units | |
| Gao et al. | Memristor-based logic gate circuit | |
| CN107092300B (en) | A kind of MPPT circuits of counting, stored digital and comparing function multiplexing | |
| CN207457780U (en) | A kind of pulsed programmable power supply | |
| CN100478705C (en) | Signal magnifying multiple circuit with digital control | |
| CN212379837U (en) | Active power distribution network real-time simulator digital-analog interface circuit based on FPGA | |
| CN206506627U (en) | A kind of building talkback terminating machine for possessing gateway function | |
| CN206332449U (en) | A kind of anti-interference filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |