CN110176504A - 部件金属化的方法 - Google Patents
部件金属化的方法 Download PDFInfo
- Publication number
- CN110176504A CN110176504A CN201910120364.6A CN201910120364A CN110176504A CN 110176504 A CN110176504 A CN 110176504A CN 201910120364 A CN201910120364 A CN 201910120364A CN 110176504 A CN110176504 A CN 110176504A
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- China
- Prior art keywords
- coating
- metal
- component
- layer
- passivating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 83
- 239000002184 metal Substances 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 61
- 150000002739 metals Chemical class 0.000 title claims description 9
- 238000000576 coating method Methods 0.000 claims abstract description 128
- 239000011248 coating agent Substances 0.000 claims abstract description 127
- 239000004020 conductor Substances 0.000 claims abstract description 46
- 230000008021 deposition Effects 0.000 claims abstract description 32
- 238000009713 electroplating Methods 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000003989 dielectric material Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 33
- 238000002161 passivation Methods 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 20
- 239000004411 aluminium Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 15
- 238000007639 printing Methods 0.000 claims description 15
- 239000002243 precursor Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910000510 noble metal Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims 2
- 238000013532 laser treatment Methods 0.000 abstract description 6
- 238000010329 laser etching Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 238000001465 metallisation Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005518 electrochemistry Effects 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000570 Cupronickel Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000009666 routine test Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
- C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
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Abstract
本发明涉及一种在部件上制备一个以上电触点的方法,包括:(a)在部件上施加一个以上涂层,其中,至少一个涂层是导电材料的涂层,(b)在涂覆的部件上施加自钝化金属或半导体和/或介电材料,(c)通过激光处理或蚀刻使钝化涂层结构化,(d)使结构化涂层与电镀浴接触,(e)蚀刻未用电镀沉积金属覆盖的区域。
Description
技术领域
本发明涉及一种在部件(尤其是电气部件,例如,太阳能电池或发光二极管,或印刷电路板的前体)上制造电触点(例如,以电导体线路(electrical conductor track)的形式)的方法。本发明还涉及可通过该方法获得的装置。
背景技术
对于许多部件的使用,必须将电触点(尤其是电导体线路形式的电触点)安装在部件上。电触点用于例如从部件迁移电流或从部件分接电压或在该部件上存在的电部件之间建立电连接。例如,如果该部件是太阳能电池,则可以通过电触点迁移由该半导体部件的光伏效应产生的光电流。或者,该部件可以例如是印刷电路板的前体,其通过应用导体线路最终转化为印刷电路板(PCB)。
在已知和常规方法中,将包含银颗粒的浆料应用到部件上,然后在足够高的温度下处理部件使银颗粒烧结。为此,可能需要至少800℃的温度。然而,对于许多部件来说,这样的高温是不可接受的。
异质结太阳能电池,例如硅异质结太阳能电池(SHJ太阳能电池),是不适合在相对高的温度下应用电触点的电气部件的例子。SHJ太阳能电池是基于晶片的晶体硅太阳能电池,其具有发射极和非晶硅的后表面场或前表面场。用于此目的的起始材料是晶体,特别是已被n型掺杂或p型掺杂(基极掺杂)的单晶硅。首先,将非常薄(约1~10nm)的本征(未掺杂)非晶硅层施加到其每一侧。接下来,在一侧上施加同样非常薄(约10~50nm)的掺杂非晶硅层,该非晶硅层具有与基极掺杂(非晶发射极层)相反的掺杂类型(n型或p型)。在另一侧施加薄(10~50nm)的非晶硅层,其具有对应于基极掺杂(后表面场或前表面场)的掺杂类型。最后,施加厚度为50~100nm的透明导电氧化物(TCO),例如氧化铟锡(ITO)。这种TCO层在25℃下通常具有不大于300Ω的薄层电阻。异质结太阳能电池的结构和作用模式例如描述于S.De Wolf等,Green,卷2(2012),7-24页。
为了避免SHJ太阳能电池的非晶硅层中不希望的结晶,应避免温度高于250℃。
对于其他太阳能电池类型或其他电气部件,如发光二极管,也希望应用具有最小热应力的电触点。
使用足够小的银纳米颗粒可以将银浆料的烧结温度降低到低于200℃。然而,这里有一个缺点是无法储存浆料,因为即使在室温下烧结过程也会逐渐地继续进行并且银纳米颗粒构成相当大的安全风险。此外,纳米颗粒的成本远高于大颗粒或电沉积的金属。
还已知使用含有有机粘合剂的浆料,例如热交联树脂和薄片形式的银颗粒。树脂形成将薄片保持在一起的基质并建立与电气部件外层(例如透明导电氧化物(TCO)层如ITO)的粘合强度。但是,与热烧结浆料相比,其实现的导电性明显更低。结果是,需要更多的银,并且导体线路对太阳能电池的正面的遮蔽增加。
或者,可通过电解施加导体线路。这实现了非常好的导体线路导电性。但是表面必须印刷电镀漆掩模作为导体线路图案的负极。在电沉积之后,必须在化学浴中除去漆。但是由于材料消耗和必要的废水净化,这种漆掩模的必要性使得该过程非常昂贵。而且,在某些情况下,TCO层上电解施加的金属层(即,诸如ITO的透明导电氧化物层)的粘合强度不令人满意。
在价值特别高的部件的情况下,首先,在工件的整个区域上施加薄金属层或金属层堆叠。在其上施加例如光致抗蚀剂,其通过光刻法以待形成的导体线路的负掩模的形式构造。或者,以已经结构化的形式(例如通过喷墨)施加负掩模。通过电解用铜使非漆涂层表面增厚,并且可选地通过附加的银层保护铜免受氧化。随后,在化学浴中除去漆,并在先前的漆涂层区域中蚀刻金属。例如,在US 8,399,287 B1中描述了相应的金属化方法。
US 2014/0295614 A1描述了一种用于背接触太阳能电池的金属化的方法。可以通过锌酸盐步骤在整个区域上活化气相沉积的铝种子层。随后,可以施加局部阻挡层。在电沉积之后,必须去除阻挡层并且必须蚀刻活化的铝种子层。
WO 2015/148572 A1描述了一种太阳能电池的金属化方法,其中铝层被局部阳极氧化。阳极氧化区域导致背接触太阳能电池的金属触点的电分离。
R.Rohit等,Energy Procedia,124(2017),901-906页描述了太阳能电池的金属化方法。在该方法中,首先将自钝化钛涂层沉积在SHJ太阳能电池上。没有发生钛层的结构化。镍沉积在该自钝化涂层的限定区域中。然后在镍上电沉积铜。
在印刷电路板(PCB)由塑料制成的情况下,由于板材缺乏热稳定性,无法印刷可烧结金属颗粒的导体线路。由于高成本、缺乏导电性以及缺乏对电气部件耦合的焊接方法的适应性,只有在特殊情况下,由树脂基质中的银薄片制成的导体线路才作为一种选择。
发明内容
本发明的一个目的是通过一种保持部件上低热应力、避免使用掩模(例如漆掩模)并且可以以最大效率地执行的方法,在部件上施加电触点(例如电导体线路)。
该目的通过一种在具有正面和背面的部件上制备一个以上电触点的方法来实现,包括以下步骤:
(a)在部件的正面和/或背面上施加一个以上涂层,获得涂覆的部件,其中,至少一个涂层是导电材料的涂层,
(b)在涂覆的部件上施加自钝化金属或半导体和/或介电材料,获得钝化涂层,
(c)用激光或蚀刻处理钝化涂层的限定区域,获得结构化涂层,
(d)使结构化涂层与电镀浴接触,其中,在用激光或蚀刻介质处理的区域中电镀沉积金属,
(e)蚀刻未用电镀沉积金属覆盖的区域,直到部件的正面和/或背面在这些区域中暴露。
附图说明
图1a-e中显示在各个工艺步骤后获得的结构。
具体实施方式
如本领域技术人员所知,自钝化金属(也称为“阀金属(valve metal)”)或自钝化半导体的涂层即使在室温下也在其表面上形成薄氧化膜(即,涂层具有自然氧化膜形式的介电表面)。在本发明的上下文中,利用该氧化膜的存在,防止或至少抑制自钝化金属或半导体上的电镀金属沉积。在诸如氧化硅或氧化铝的介电金属涂层上,金属的电镀沉积是不可能的,或至少被抑制。
如果用激光或蚀刻介质处理该钝化(即自钝化或介电)涂层的限定区域,随后可以在该已处理区域中进行电镀金属沉积,而对于未处理区域仍然存在仅发生很小程度的电镀沉积(如果有的话)的情况。例如,激光或蚀刻处理除去已处理区域中的钝化涂层,以便形成一个以上开口,并且这些区域中的导电材料的涂层至少部分地暴露。或者,例如,导电材料的涂层也可以扩散到已处理区域的钝化涂层中。导电材料涂层的部分暴露或该导电涂层扩散到钝化涂层中产生可以进行电镀金属沉积的限定区域。
在完成电镀金属沉积时,可以蚀刻掉未被电镀沉积金属覆盖的区域,直到部件的正面和/或背面在这些区域中暴露。
通过本发明的方法,金属触点可以以低热应力的有效方式安装在部件上。由于自钝化或介电层可以实际上以任何方式通过激光或蚀刻处理构造,因此金属触点也可以以任何形式(例如以指状和汇流条或叉指结构的形式)获得。介电或自钝化层的结构化不需要掩模。在随后的电镀步骤中,结构化涂层用作在限定的区域中可使金属沉积的“掩模”。
该部件是例如电气部件(例如光电部件或半导体部件)或其前体。
安装有电触点的部件也可以是印刷电路板的前体。印刷电路板的前体优选包含塑料(尤其是不导电的塑料),该塑料也可以可选地通过纤维强化。印刷电路板的前体可以是,例如,柔性薄膜(例如聚合物薄膜),或者是刚性或硬质薄片(例如聚合物薄片)。
优选的电气部件是,例如,太阳能电池,二极管(例如发光二极管)或显示屏,尤其是平面显示屏(平板显示屏),例如液晶显示屏(LCD)。
在太阳能电池的情况下,正面是部件的被照射面,即面向辐射源的一侧。通过本发明的方法,可以例如在部件的正面或背面施加电触点(例如,在仅为背接触的太阳能电池的情况下)或在每一面上施加电触点。
施加电触点的电气部件还不必处于其最终形式,但通常已经包含对其功能(例如实现光伏效应)必不可少的那些部件。或者,施加电触点的部件可以是电气部件的前体,并且仅在施加电触点之后才添加实现其功能模式所需的其他部件。
在本发明的上下文中,太阳能电池应理解为意指在辐射能(通常为太阳光)的作用下表现出光伏效应的半导体部件。
优选地,太阳能电池是硅太阳能电池。在优选实施方式中,该部件是异质结太阳能电池,尤其是硅异质结太阳能电池(SHJ太阳能电池)或其前体。如本领域技术人员所知,SHJ太阳能电池通常在其正面和/或背面具有透明导电氧化物(TCO)层。
太阳能电池也可以是仅通过其背面接触的太阳能电池。在这些太阳能电池中,电触点是例如叉指结构的形式。
本发明的方法特别关注于具有导电层的晶体硅太阳能电池类型,所述导电层具有导电性,该导电性必须通过在用作太阳能电池的基础材料的晶体硅基板的两个表面的至少一个上以金属形式施加的导体线路进一步改善。
它们包括,例如,如下的太阳能电池类型:在作为基础材料的晶体硅的至少一面上具有光学透明的导电涂层,所述导电涂层抑制晶体硅晶片的相应涂覆表面上的电子-空穴对的复合。
它们尤其包括硅异质结太阳能电池(SHJ),其中钝化层由非晶硅组成。或者,表面也可以由可隧穿的二氧化硅层(因此其在与层呈直角的方向上同样会导电)组成,随后在该二氧化硅层上施加导电多晶硅层、碳化硅层或导电金属氧化物,例如氧化钼、氧化钨、氧化镍或氧化钛。由于平行于表面的所有这些层的导电性非常低,因此优选另外将高导电率TCO层(例如ITO层)施加到复合抑制层系统。然而,由于即使在施加TCO层的情况下,平行于表面的导电性太低,因而无法有效地迁移电流,因此还必须将金属导体线路施加到表面上。
作为部件,本发明的方法对于太阳能电池(特别是对于上述太阳能电池类型,例如SHJ太阳能电池)具有极好的适用性,因为本发明的方法不需要用于将所施加的金属层烧结的高温步骤并且可以无需有机掩模。
SHJ太阳能电池可商购或可通过本领域技术人员已知的方法制备。
如上所述,在步骤(a)中,在部件的正面和/或背面上施加一个以上的涂层,至少一个涂层是导电材料的涂层。获得了涂覆的部件。如下文详述,导电材料的涂层至少部分地在钝化层的结构化的限定区域中再次暴露或者扩散到这些区域的钝化层中,所述钝化层的结构化的限定区域在后面的步骤(c)中实现,因此实现受控的局部限定的电解金属沉积。
优选地,步骤(a)中涂层的导电材料是金属(元素形式或合金形式)。金属在电化学电位表中的标准电位E0可以大于-1.0V,更优选大于-0.95V。金属是例如铜、镍、铟、锡、锌、铬、铁、钴或贵金属(例如银)或这些金属之一的合金(例如镍-钒合金)。通过电解沉积,可以在这些金属上非常有效地施加其他金属。
优选地,通过气相沉积,尤其是物理气相沉积(例如通过溅射)施加导电材料(尤其是金属)涂层。
导电材料的涂层的厚度优选10nm~150nm。导电材料的涂层可具有一个以上层。如果它具有多于一层,则它包含例如两层或更多层,每层由导电材料形成。
如果除了导电材料的涂层之外,在步骤(a)中施加另外的层,则这些层优选同样是金属层。关于合适的金属,可以参考上面已经提到的金属。但是,也可以使用自钝化金属,例如铝或钛。如果在步骤(a)中施加另外的层,则这同样可以例如通过气相沉积(尤其是物理气相沉积,例如溅射)来实现。
如果在步骤(a)中,除了导电材料的涂层之外还施加了另外的涂层,则这些另外的涂层各自的厚度优选在10nm~150nm的范围内。在步骤(a)中施加的涂层的总厚度为例如≤1μm,更优选≤0.6μm,甚至更优选≤0.3μm。
如果在步骤(a)中施加多层,则优选导电材料的涂层是涂覆的部件的最外层(即,导电材料的涂层最后施加)。
或者,也可以在步骤(a)中,将(特别是通过激光处理)可热蒸发的材料的涂层施加到导电材料的涂层上,于是,这种可蒸发的涂层是步骤(a)中制备的涂覆的部件的最外层。在步骤(c)中用激光对钝化涂层的后续处理中,通过蒸发该可蒸发材料来辅助已处理区域中该钝化涂层的分离。激光处理还加热钝化涂层下面的涂层。如果该涂层含有挥发性足够的材料,其蒸发并帮助除去其上方的钝化涂层。在激光处理中具有足够高的蒸发性的材料可以是,例如,氟化镁、氧化镁、氧化铋、镁、锡,或这些材料中的至少两种的混合物。通过例如溅射施加该通过激光处理可以蒸发的涂层。
在本发明方法的步骤(b)中,将自钝化金属或半导体和/或介电材料施加在涂覆的部件之上,获得钝化涂层。
当使用自钝化金属或半导体时,钝化涂层在下文中也称为自钝化涂层。当使用介电材料(如氧化硅或氧化铝)时,钝化涂层在下文中也称为介电涂层。
如本领域技术人员所知,自钝化金属或半导体是那些能够在室温(25℃)下在空气中自发形成钝化的非常薄的氧化物层的金属或半导体。自钝化金属是例如在电化学电位表中的标准电位E0<0V、优选<-0.5V(因此可以有效地沉积铜而没有还原钝化氧化层的风险),更优选<-0.8(因此与氧化物层的还原相比,更容易发生水分解)的金属,并且可以形成具有≥3.0eV带隙的氧化物的金属。如果标准电位E0<-0.5V,则可以有效地沉积铜而没有还原钝化氧化物层的风险。如果标准电位E0<-0.8V,则与钝化氧化物层的还原相比,更容易发生水分解。优选地,自钝化金属是铝、钛、钽或铌或这些金属之一的合金。更优选地,自钝化金属是铝或钛或这些金属之一的合金。优选的自钝化半导体是硅。
用于形成介电涂层的合适介电材料是本领域技术人员已知的。介电材料例如是金属或半导体的氧化物、氮化物或氮氧化物。可以提及氧化硅、氧化铝或氮化硅的例子。
钝化涂层可以通过已知方法施加,例如通过物理气相沉积(例如溅射,也称为阴极雾化)、化学气相沉积(例如等离子体辅助气相沉积PECVD)来涂覆自钝化金属或半导体膜。这些涂覆方法仅导致部件上的低热应力。
钝化涂层的厚度可以为例如≤10μm,更优选≤1μm,甚至更优选≤300nm或甚至≤150nm。优选地,钝化涂层的厚度至少为10nm。
钝化层可以具有一个以上层。例如,可以首先沉积第一介电材料(或第一自钝化金属),然后沉积至少一种另外的介电材料(或第二自钝化金属)。或者,例如,可以首先施加介电涂层然后施加自钝化涂层,或者首先施加自钝化涂层然后施加介电涂层,然后形成多层钝化涂层。
在本发明方法的步骤(c)中,用激光或蚀刻处理钝化涂层的限定区域,获得结构化涂层。
因此,结构化涂层具有已处理的区域和未处理的区域。在未处理区域中,仍然存在在步骤(b)中施加的自钝化和/或介电材料。
例如,激光或蚀刻处理除去已处理区域的钝化涂层,以便形成一个以上开口,并且在步骤(a)中施加的导电材料的涂层至少部分地暴露在这些区域中。
优选小于20%或甚至小于10%的钝化涂层的面积被除去。开口可以是例如可选地交叉的线性沟槽的形式。开口限定例如太阳能电池的正面和/或背面的指状和汇流条。
或者,例如,导电材料的涂层也可以扩散到已处理区域(例如通过激光)的钝化涂层中。
在步骤(a)中施加的导电材料涂层的暴露或者该导电材料至钝化涂层中的扩散产生适于电镀金属沉积的限定区域。对于未处理的区域,仍然存在可能仅有很小程度的电镀沉积(如果有的话)的情况。
用于结构化介电或自钝化涂层的合适的激光和工艺条件可由本领域技术人员在常规试验中确定。通过激光的功率和/或激光处理的持续时间,可以确定自钝化或介电材料是否至少部分地被除去(至少部分地暴露步骤(a)中施加的导电材料的涂层),或者涂层的导电材料是否扩散到已处理区域的钝化涂层中。
例如,可以使用蚀刻掩模进行蚀刻。然而,优选在不使用掩模的情况下实现蚀刻。在优选实施方式中,通过印刷方法(例如柔性版印刷、丝网印刷、挤压印刷或喷墨印刷)施加蚀刻剂(例如浆状蚀刻剂),从而实现蚀刻。蚀刻除去钝化涂层,并且至少部分暴露步骤(a)中施加的导电材料的涂层。
例如,蚀刻可以是电化学蚀刻操作。这里的蚀刻过程受到施加电位的影响。电化学蚀刻是本领域技术人员已知的。为了蚀刻限定区域,可以通过例如印刷方法(例如丝网印刷或挤压印刷)施加蚀刻介质。例如,在US 2016/0240699 A1中描述了通过使用印刷方法的电化学蚀刻方法来蚀刻限定区域。
特别优选使用电化学印刷方法进行蚀刻。在这种情况下,为印刷工具提供阴极电位,同时向部件提供阳极电位。然后电流通过印刷介质从部件的金属表面流向印刷工具。当使用合适的印刷介质时,导致自钝化和介电层的局部蚀刻,即使在印刷过程中它们被印刷介质所覆盖的区域也是如此。特别优选的印刷方法是丝网印刷和挤压印刷(点胶(dispensing))。在丝网印刷的情况下,部件连接到阳极触头,而金属丝网连接到阴极触头。在点胶的情况下,印刷头连接到阴极触点。合适的印刷介质可包含例如凝胶化的磷酸。
如上所述,在本发明方法的步骤(d)中,使步骤(c)中得到的结构化涂层与电镀浴接触。在这种情况下,金属在用激光或蚀刻介质处理的区域中电镀沉积,而在未处理区域中金属的电沉积(如果有的话)仅局部地进行。因此,未处理区域至少部分地不被电镀沉积的金属覆盖。
电镀浴含有待电镀沉积的金属盐。辅助电极通常也浸入电镀浴中,例如铜阳极(“牺牲阳极”)或钛电极。结构化涂层起反电极的作用。如果对结构化涂层施加合适的负(即阴极)电位,则金属离子被还原并且金属沉积在用激光或通过蚀刻处理的区域中。
电镀沉积可以通过DC电流或通过脉冲电流实现。使用改变符号的脉冲电流可以进一步改善金属在已处理区域中的选择性沉积。改变符号的脉冲电流具有交替的负(阴极)和正(阳极)电流脉冲。
电镀沉积的金属优选为铜或铜合金、镍或镍合金或贵金属如银或银合金。
如果在步骤(c)中,激光或蚀刻处理至少部分地除去钝化涂层,以形成一个以上开口,并且在步骤(a)中施加的导电材料的涂层在这些区域中至少部分地暴露,则金属在步骤(d)中在开口处电镀沉积。优选地,电镀金属沉积至少进行到开口已完全被电镀沉积的金属填充。
在一个优选的实施方案中,进行电镀金属沉积,直到电镀沉积的金属完全填充开口并形成过量(即一些电镀沉积的金属从开口溢出)。这对于步骤(e)中的后续蚀刻是有利的。如果在后续的蚀刻步骤(e)中,在步骤(d)中电镀沉积的金属也会受到蚀刻介质的侵蚀,该电镀沉积的金属以足够的量或厚度存在,从而在蚀刻步骤(e)结束后,存在充足的电镀沉积金属。
可选地,在电镀金属沉积步骤(d)之后和蚀刻步骤(e)之前,电镀沉积一种以上另外的金属。另外的金属的电镀沉积在各自的情况下选择性地在预先电镀沉积的金属之上实现。这些另外沉积的金属例如是铜或铜合金、镍或镍合金或贵金属如银或银合金。优选叠覆的金属(即直接接触的金属)是不同的金属。
电镀沉积的金属例如以1μm~30μm的厚度存在,更优选3μm~25μm。
在本发明方法的步骤(e)中,蚀刻未被电镀沉积金属覆盖的区域,直到部件的正面和/或背面暴露在这些区域中。
在印刷电路板(或印刷电路板的前体)的情况下,该暴露的正面和/或背面是例如塑料表面。如果该部件是SHJ太阳能电池,则该暴露的正面和/或背面是例如透明的导电氧化物层(即“TCO”层),例如,ITO层。
用于除去自钝化和/或介电涂层的合适蚀刻剂或步骤(a)中施加的涂层(例如导电材料的涂层)是本领域技术人员已知的。
在蚀刻步骤(e)结束之后,在步骤(d)中电镀沉积的金属仍然至少部分存在并且可以用作电触点(以便例如迁移太阳能电池中产生的电流)。
任选地,可以在步骤(e)的过程中改变蚀刻剂,以便能够以最大的选择性除去相应的材料。蚀刻剂可以是液体或气体蚀刻剂。
如果步骤(e)中使用的蚀刻剂也攻击在步骤(d)中电镀沉积的金属,则这可以被例如足够高的电镀沉积金属厚度补偿。这可以确保在蚀刻步骤(e)结束之后,在步骤(d)中电镀沉积的金属仍然至少部分存在。
示例性蚀刻剂是例如NaOH水溶液,NH4OH-H2O2水溶液或磷酸。取决于待蚀刻的材料,可以替代地使用本领域技术人员已知的其他蚀刻剂。
本发明还涉及可通过上述方法获得的金属化部件。
参考下面的示例性实施方式详细描述本发明。在各个工艺步骤之后获得的结构也显示在图1a-e中。
作为要在其上安装一个以上电触点的部件1,提供硅异质结太阳能电池(SHJ)。其在正面和背面具有透明的导电氧化物(“TCO”)涂层,例如氧化铟锡(“ITO”)(图1a中未示出)。
在步骤(a)中,通过溅射在SHJ太阳能电池1的正面(或者在背面,或同时在正面和背面上)溅射施加导电材料的涂层2。得到的结构如图1a所示。该导电涂层可具有一层或多层。例如,首先通过溅射(层厚例如10~30nm)施加镍,然后施加铜(层厚例如50~70nm),最后施加镍(层厚例如10~30nm)。
在步骤(b)中,通过溅射施加层厚约为60~80nm的一层自钝化金属(例如铝)。由于在铝的表面形成自然氧化物层,因此得到自钝化涂层3。或者,可以施加(优选同样通过溅射)介电材料,例如氧化铝、氧化硅或氮化硅,提供了介电涂层3。步骤(b)中获得的示例性结构如图1b所示。
在步骤(c)中,通过印刷方法在自钝化铝层3的限定区域之上施加含HCl的蚀刻浆料,加热至80℃并用水冲洗。在这些蚀刻区域中,铝层3被除去并且下面的镍层2被暴露。得到结构化涂层4,其中在步骤(b)中沉积的铝层3被一个以上开口中断。图1c示出了在步骤(c)中得到的示例性结构。
在步骤(d)中,使结构化铝层4与含铜盐的电镀浴接触。对于电镀沉积,使用脉冲电流(即交替的阴极和阳极脉冲)。电流的沉积脉冲(即阴极脉冲)和溶解脉冲(即阳极脉冲)的交替导致开口(即,蚀刻使得镍层2暴露的区域)中选择性电沉积,而在结构化涂层4的自钝化铝表面上仅发生程度非常小的电镀金属沉积(如果有的话)。进行电镀铜沉积直到开口完全被铜5填充并且甚至形成过量的铜(即铜从开口溢出)。图1d示出了在步骤(d)中得到的示例性结构。
在步骤(e)中,将结构化涂层4的自钝化铝的暴露区域(即未覆盖电镀沉积铜的区域)以及步骤(a)中沉积的涂层2的下面区域蚀刻掉,到达SHJ太阳能电池1。在已经蚀刻掉的这些区域中,SHJ太阳能电池1的ITO表面因此再次暴露。这些已经蚀刻掉的区域附近保留有层叠层,其中,在步骤(a)中通过溅射沉积的涂层2以及在步骤(d)中电镀沉积的铜5各自存在。可选地,在电镀沉积的铜区域5的边缘处,结构化涂层4的自钝化金属的残留可能仍然存在(例如,当过量的铜5,即从开口溢出的铜覆盖自钝化铝的部分表面并因此在步骤(e)中提供针对蚀刻剂的保护时)。图1e示出了在步骤(e)中得到的示例性结构。
Claims (13)
1.一种在具有正面和背面的部件(1)上制备一个以上电触点的方法,包括以下步骤:
(a)在部件的正面和/或背面上施加一个以上涂层,获得涂覆的部件,其中,至少一个涂层是导电材料的涂层(2),
(b)在涂覆的部件上施加自钝化金属或半导体和/或介电材料,获得钝化涂层(3),
(c)用激光或蚀刻处理钝化涂层(3)的限定区域,获得结构化涂层(4),
(d)使结构化涂层(4)与电镀浴接触,其中,在用激光或蚀刻介质处理的区域中电镀沉积金属(5),
(e)蚀刻未用电镀沉积金属(5)覆盖的区域,直到部件(1)的正面和/或背面在这些区域中暴露。
2.根据权利要求1所述的方法,其中,部件(1)是电气部件,尤其是太阳能电池或太阳能电池的前体、发光二极管或发光二极管的前体,或印刷电路板的前体。
3.根据权利要求2所述的方法,其中,太阳能电池是异质结太阳能电池。
4.根据前述权利要求中任一项所述的方法,其中,步骤(a)中的涂层(2)的导电材料是金属,尤其是铜、镍、铟、锡、锌、铬、铁、钴或贵金属或这些金属之一的合金。
5.根据前述权利要求中任一项所述的方法,其中,导电材料的涂层(2)是步骤(a)中施加的涂层的最外层;或者其中,在导电材料的涂层(2)之上施加另一层可热蒸发材料的涂层,特别是氟化镁、氧化镁、氧化铋、镁或锡的涂层,并且所述另一层涂层是步骤(a)中施加的涂层的最外层。
6.根据前述权利要求中任一项所述的方法,其中,在步骤(a)中通过气相沉积施加导电材料的涂层(2),以及如果存在的话,一层或多层的可选涂层。
7.根据前述权利要求中任一项所述的方法,其中,步骤(b)中的自钝化金属是铝或钛;和/或其中,步骤(b)中的自钝化半导体是硅。
8.根据权利要求1~6中任一项所述的方法,其中,步骤(b)中的介电材料是金属或半导体的氧化物、氮化物或氮氧化物。
9.根据前述权利要求中任一项所述的方法,其中,通过气相沉积施加步骤(b)中的钝化涂层(3)。
10.根据前述权利要求中任一项所述的方法,其中,在步骤(c)中,在已处理区域中除去钝化涂层(3),并且至少部分暴露在步骤(a)中施加的导电材料的涂层(2)。
11.根据前述权利要求中任一项所述的方法,其中,步骤(c)中的蚀刻包括通过印刷方法施加蚀刻剂;和/或蚀刻是电化学蚀刻操作。
12.根据前述权利要求中任一项所述的方法,其中,在步骤(d)中金属(5)的电镀沉积是通过具有阴极和阳极电流脉冲的脉冲电流法实现的。
13.金属化部件,其通过权利要求1~12中任一项所述的方法获得。
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CN113089063A (zh) * | 2021-04-14 | 2021-07-09 | 王曼曼 | 连续电镀装置及连续电镀方法 |
CN114351233A (zh) * | 2021-12-08 | 2022-04-15 | 江苏大学 | 一种利用激光进行阳极局部活化实现定域电沉积的方法及装置 |
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JP7354944B2 (ja) | 2020-07-06 | 2023-10-03 | トヨタ自動車株式会社 | 配線基板の製造方法 |
JP7456330B2 (ja) | 2020-08-21 | 2024-03-27 | トヨタ自動車株式会社 | 配線基板の製造方法 |
DE102021126402B4 (de) | 2021-10-12 | 2023-08-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Verfahren zum Herstellen elektrisch leitfähiger Strukturen |
CN115084312A (zh) * | 2022-03-11 | 2022-09-20 | 浙江爱旭太阳能科技有限公司 | 太阳能电池的制备方法及太阳能电池组件、发电系统 |
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CN110176504B (zh) | 2022-12-09 |
DE102018202513A1 (de) | 2019-08-22 |
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US10808330B2 (en) | 2020-10-20 |
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