CN110176439A - A kind of module SiP structure and its manufacturing method - Google Patents
A kind of module SiP structure and its manufacturing method Download PDFInfo
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- CN110176439A CN110176439A CN201910457970.7A CN201910457970A CN110176439A CN 110176439 A CN110176439 A CN 110176439A CN 201910457970 A CN201910457970 A CN 201910457970A CN 110176439 A CN110176439 A CN 110176439A
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- ltcc
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- shell
- htcc
- stiffening plate
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 93
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000007789 sealing Methods 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000005422 blasting Methods 0.000 claims description 3
- 229920006332 epoxy adhesive Polymers 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 3
- 238000013475 authorization Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Combinations Of Printed Boards (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of module SiP structure and its manufacturing methods, shell including sealing and the circuit unit in shell, the circuit unit includes the horizontal multilager base plate being set in shell, it is spaced from each other between adjacent substrate, the substrate is equipped with circuit components, it is connected and is connected by connecting line between each base on-board circuitry component, be additionally provided with the connecting pin being connected to circuit unit on the shell.Module SiP structure and its manufacturing method of the present invention realize highly integrated integration by the circuit layout of HTCC, LTCC multilayer wiring and precision, and volume reduces more compared with existing capability module；By design optimization, multilayer wiring and assembled with high precision, while reducing module volume, weight can reduce 30% or more.
Description
Technical field
The present invention relates to a kind of electrical component assemblies, and in particular to a kind of module SiP structure and its manufacturing method.
Background technique
With large scale integrated circuit, semiconductor chip manufacture, it is integrated, encapsulation technology be constantly progressive, electronic system or
Complete machine gradually shows multi-functional, high-performance, miniaturization, light-duty/portable, high speed, the development trend of low consumption and high reliability.
This, which does not require nothing more than semiconductor chip, can integrate more different types of components, also to protection chip, increased thermal conductivity energy, play
More stringent requirements are proposed for the encapsulation of the effects of bridge of chip chamber and peripheral circuit.Encapsulation technology by original monolithic IC,
Discrete component encapsulation is integrated to develop to multi-chip, the system integration, high density, high reliability and high-performance package.
SiP is the abbreviation of " System in Package ", means that system encapsulates.SiP encapsulation can be by other such as passive group
Component integration needed for the systems such as part and antenna makes it have more complete system function in single structure dress.With printing
On circuit board carry out the system integration compare, SiP can to the maximum extent optimization system performance, avoid repeat encapsulate, shorten exploitation week
Phase reduces cost, improves integrated level.Compare SOC(System on Chip system level chip), SiP has flexibility ratio height, collection
At the features such as degree is high, the design cycle is short, development cost is low.
Authorization Notice No. provides for the Chinese invention patent of CN103765579B for manufacture system grade packaging
Improved method, and in particular to the method and system in package device of manufacture system grade packaging.It in the method, will at least
One first kind tube core, at least one second class tube core and system in package device with predetermined size with predetermined size
At least one other component of part covers in system in package device.Select the first kind tube core and the second class tube core
At least one of be used for resizing.To at least side added material of selected tube core, so that added material
The tube core structure of resizing is formed with selected tube core.Articulamentum is formed on the tube core structure of the resizing.It is right
The tube core structure of the resizing carries out scale cun, to allow non-selected tube core and at least one other portion
Part manufacture is contacted at via the articulamentum with the tube core structure of the resizing.
Authorization Notice No. provides a kind of system-in-package module component, institute for the Chinese invention patent of CN105489597B
State chip, inductance and electric elements that system-in-package module component includes substrate, is electrically connected with the substrate, the substrate packet
Include first surface, the second surface and container opposite with the first surface, the container through the second surface with
And the first surface；The inductance includes magnetic core and inductance coil, and the magnetic core includes matrix and is convexly equipped in described matrix
The boss of one outer surface, the outer surface that described matrix is convexly equipped with the boss are bonded with the second surface, the boss receiving
In in the container, the inductance coil is embedded in the boss, and the chip includes a manufacture face, the chip installing
It is opposite with the first surface interval on the first surface and manufacture face, boss orthographic projection in the container in
On the manufacture face of the chip, the electric elements are located at the chip periphery.A kind of system-level envelope that the invention provides
Die-filling piece and electronic equipment mainly can reduce system-in-package module component integral thickness space, and then realize electronic product
Slimming.Patent disclosed above, structure is all more complex, and manufacture is inconvenient, and not only volume is larger, and weight also compared with
Weight.
Summary of the invention
The purpose of the present invention is to provide a kind of module SiP structure and its manufacturing methods, pass through multilayer wiring and high-precision
Assembling, mitigates weight while reducing module volume.
To achieve the above object, the invention adopts the following technical scheme:
A kind of module SiP structure, the shell including sealing and the circuit unit in shell, the circuit unit include level
Multilager base plate in shell is spaced from each other between adjacent substrate, and the substrate is equipped with circuit components, on each substrate
It is connected and is connected by connecting line between circuit components, be additionally provided with the connecting pin being connected to circuit unit on the shell.
In above scheme, the circuit unit further includes stiffening plate, and the platform for fixing stiffening plate is equipped in the shell
Rank, the stiffening plate are manufactured in shell by step level, and the upside of the stiffening plate is equipped with LTCC upper substrate, and downside is
Equipped with LTCC lower substrate, the bottom of the shell is equipped with HTCC substrate, the LTCC upper substrate, LTCC lower substrate and HTCC substrate
Between be connected to connecting pin by metal wire.
In above scheme, the stiffening plate is equipped with for the manufacturing hole across metal wire.
AlN-HTCC multilayer wiring is used on the HTCC substrate, the HTCC substrate is equipped with (PCC) power and for connecting
Connect the connecting line of (PCC) power.
Further, the connecting pin uses glass insulator, and the glass insulator is introduced from shell side, passes through glass
Glass sintering and canned integralization structure realize inside and outside interconnection by connecting line；Under HTCC substrate and LTCC upper substrate, LTCC
It is connected between substrate by soft arranging wire.
Further, the stiffening plate is fixed in shell by detachable member, and LTCC upper substrate surface is pasted with naked
Chip, flip-chip, the bare chip and flip-chip are realized by metal wire and are electrically connected；On LTCC lower substrate manufacture whether there is or not
Source device；The LTCC upper substrate and LTCC lower substrate are all made of LTCC multilayer wiring, and pass through insulator or pottery between the two
Porcelain block wire bonding.
A kind of manufacturing method of module SiP structure, comprising the following steps:
(1) integrated case package: the welding of shell outer lead, peripheral frame welding；
(2) LTCC upper substrate and its device assembling: being processed by shot blasting LTCC upper substrate surface, and after implementing thin-film technique,
Filled under DSP back-off weldering and epoxy resin；Chip is buckled to postwelding, and surface protection is got up；By LTCC upper substrate surface device
Part welding and the welding of substrate and stiffening plate are completed at the same time；Then remaining chip, component welded, be adhered to LTCC
Substrate completes bonding；
(3) LTCC lower substrate device assembles: by the way that the passive device of signal circuit section is welded to LTCC lower substrate surface；
(4) HTCC substrate and its surface device assembling: entering shell for the device of driving circuit section and HTCC substrate synchronous welding,
Then the bonding and wire bonding of surface device are carried out, and carries out the test of the partial circuit function；
(5) LTCC lower substrate is fixedly connected with stiffening plate, and LTCC upper and lower base plate is connect with HTCC shell；
(6) stiffening plate is fixed in shell, then tests, seals.
In above scheme, in the LTCC lower substrate device assembling, solder melt point is 179 degree, technological temperature 230-
250 degree.
In above scheme, the LTCC lower substrate is connected to stiffening plate, the LTCC upper and lower base plate, HTCC using Wear Characteristics of Epoxy Adhesive
Substrate is connected with each other by gold wire bonding or soft arranging wire and shell, and the stiffening plate is fixed in shell by screw.
As shown from the above technical solution, module SiP structure and its manufacturing method of the present invention, pass through HTCC, LTCC
Multilayer wiring and accurate circuit layout, realize highly integrated integration, volume can reduce 60% compared with existing capability module；Pass through
Design optimization, multilayer wiring and assembled with high precision, while reducing module volume, weight can reduce 30% or more；Present invention tool
There is high reliable: highly integrated integral structure, closed type≤1 × 10-3pacm3/s, securely and reliably；System-level precision
Encapsulation, circuit performance are stablized: over-voltage, short circuit, overheat protector, resistance to temperature cycles, mechanical resistant impact.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is top view of the invention.
Specific embodiment
The present invention will be further described with reference to the accompanying drawing:
As shown in Figure 1, the module SiP structure of the present embodiment, the circuit unit including shell 1 and in shell 1, the present embodiment
Shell 1 include bottom case 11 and upper cover 12, the bottom case 11 and upper cover 12 are fixed by flange 14, realization integrated sealing；Circuit
Component includes stiffening plate 2, and the step 13 for fixing stiffening plate 2 is equipped in shell 1, and stiffening plate 2 passes through the horizontal manufacture of step 13
In in shell 1, the upside of stiffening plate 2 is equipped with LTCC upper substrate 3, and the downside of stiffening plate 2 is equipped with LTCC lower substrate 4, shell 1
Bottom is equipped with HTCC substrate 5, is additionally provided with the connection being connected to circuit unit on shell 1, and 6, base under LTCC upper substrate 3, the LTCC
It is electrically connected between plate 4 and HTCC substrate 5 by metal wire 8 and connecting pin 6.It is equipped in stiffening plate 2 for across metal wire 8
Manufacturing hole 9.
The present embodiment uses AlN-HTCC circuit board, and top is using ltcc substrate wiring manufacture signal control circuit portion
Point, in order to promote the reliability of LTCC, use stiffening plate 2 as the support of ltcc substrate, control circuit interconnected, which uses, draws
The interconnection of line interconnection, control circuit and power circuit is connected using soft arranging wire 14.The present embodiment uses the ltcc substrate number of plies for 10
Layer, barrier enclosure ring frame thickness 2mm, pin interconnection use 25 μm of φ of spun gold.
On the HTCC substrate 5 of the present embodiment use AlN-HTCC multilayer wiring, HTCC substrate 5 be equipped with (PCC) power 7 and
For connecting the connecting line 8 of (PCC) power 7.
Connecting pin 6 uses glass insulator, and glass insulator is introduced from 1 side of shell, passes through glass sintering and 1 shape of shell
Integralization structure realizes inside and outside interconnection by connecting line.
Stiffening plate 2 is fixed in shell by detachable member, the detachable member such as screw or stud etc., on LTCC
3 surface mount of substrate has bare chip, flip-chip, and bare chip and flip-chip are realized by metal wire to be electrically connected；Under LTCC
Manufacture has passive device on substrate 5；LTCC upper substrate 3 and LTCC lower substrate 5 are all made of LTCC multilayer wiring, and lead between the two
Cross insulator or ceramic block wire bonding.
As shown in Fig. 2, being connected between HTCC substrate 5 and LTCC upper substrate 3, LTCC lower substrate 4 by soft arranging wire 10.
The specific manufacturing step of the module SiP structure of the present embodiment is as follows:
Step 1: integrated case package: the welding of shell outer lead, peripheral frame welding；
Step 2:LTCC upper substrate and its device assembling:
LTCC upper substrate surface is processed by shot blasting, and after implementing thin-film technique, filled out under DSP back-off weldering and epoxy resin
It fills；Chip is buckled to postwelding, and surface protection is got up；
The welding of the welding of upper substrate surface device, substrate and stiffening plate is completed at the same time；Then remaining chip, component are welded
It connects, be adhered to ltcc substrate, complete bonding；
The assembling of 4 device of step 3:LTCC lower substrate: the passive device of signal circuit section is fabricated under LTCC by reflow welding
4 surface of substrate: 179 degree of solder melt point, 240 degree of technological temperature；
Step 4:HTCC substrate 5 and its surface device assembling: the device of driving circuit section and 5 synchronous welding of HTCC substrate are entered
In shell 1, the bonding and wire bonding of surface device are then carried out, and carries out the test of the partial circuit function；
Step 5: LTCC lower substrate 4 is connected in stiffening plate 2 by Wear Characteristics of Epoxy Adhesive；
Step 6:LTCC upper and lower base plate 3 and 4 is connect by gold wire bonding or soft arranging wire with HTCC substrate 5, then leads to stiffening plate 2
Screw is crossed to be fixed in shell 1；
Step 7: completing test and sealing.
Embodiment described above only describe the preferred embodiments of the invention, not to model of the invention
It encloses and is defined, without departing from the spirit of the design of the present invention, those of ordinary skill in the art are to technical side of the invention
The various changes and improvements that case is made should all be fallen into the protection scope that claims of the present invention determines.
Claims (10)
1. a kind of module SiP structure, it is characterised in that: the shell including sealing and the circuit unit in shell, the electricity
Road component includes the horizontal multilager base plate being set in shell, is spaced from each other between adjacent substrate, the substrate is equipped with circuit elements
Device is connected between each base on-board circuitry component by connecting line and is connected, and is additionally provided on the shell and circuit unit connects
Logical connecting pin.
2. module SiP structure according to claim 1, it is characterised in that: the circuit unit further includes stiffening plate, described
The step for fixing stiffening plate is equipped in shell, the stiffening plate is manufactured in shell by step level, the stiffening plate
Upside be equipped with LTCC upper substrate, downside is equipped with LTCC lower substrate, and the bottom of the shell is equipped with HTCC substrate, described
It is connected to by metal wire with connecting pin between LTCC upper substrate, LTCC lower substrate and HTCC substrate.
3. module SiP structure according to claim 2, it is characterised in that: the stiffening plate is equipped with for across metal
The manufacturing hole of line.
4. module SiP structure according to claim 1, it is characterised in that: more using AlN-HTCC on the HTCC substrate
Layer wiring, the HTCC substrate are equipped with (PCC) power and the connecting line for connecting (PCC) power.
5. module SiP structure according to claim 1, it is characterised in that: the connecting pin uses glass insulator, described
Glass insulator is introduced from shell side, by glass sintering and canned integralization structure, realized by connecting line inside and outside
Interconnection.
6. module SiP structure according to claim 1, it is characterised in that: the stiffening plate is fixed by detachable member
In in shell, LTCC upper substrate surface is pasted with bare chip, flip-chip, and the bare chip and flip-chip pass through metal wire reality
Now it is electrically connected；Manufacture has passive device on LTCC lower substrate；It is more that the LTCC upper substrate and LTCC lower substrate are all made of LTCC
Layer wiring, and pass through insulator or ceramic block wire bonding between the two.
7. module SiP structure according to claim 1, it is characterised in that: HTCC substrate and base under LTCC upper substrate, LTCC
It is connected between plate by soft arranging wire.
8. the manufacturing method of module SiP structure according to claim 1, which comprises the following steps:
(1) integrated case package: the welding of shell outer lead, peripheral frame welding；
(2) LTCC upper substrate and its device assembling: being processed by shot blasting LTCC upper substrate surface, and after implementing thin-film technique,
Filled under DSP back-off weldering and epoxy resin；Chip is buckled to postwelding, and surface protection is got up；By LTCC upper substrate surface device
Part welding and the welding of substrate and stiffening plate are completed at the same time；Then remaining chip, component welded, be adhered to LTCC
Substrate completes bonding；
(3) LTCC lower substrate device assembles: by the way that the passive device of signal circuit section is welded to LTCC lower substrate surface；
(4) HTCC substrate and its surface device assembling: entering shell for the device of driving circuit section and HTCC substrate synchronous welding,
Then the bonding and wire bonding of surface device are carried out, and carries out the test of the partial circuit function；
(5) LTCC lower substrate is fixedly connected with stiffening plate, and LTCC upper and lower base plate is connect with HTCC shell；
(6) stiffening plate is fixed in shell, then tests, seals.
9. the manufacturing method of module SiP structure according to claim 8, it is characterised in that: the LTCC lower substrate device
In assembling, solder melt point is 179 degree, and technological temperature is 230-250 degree.
10. the manufacturing method of module SiP structure according to claim 8, it is characterised in that: the LTCC lower substrate uses
Wear Characteristics of Epoxy Adhesive is connected to stiffening plate, and the LTCC upper and lower base plate, HTCC substrate are mutually interconnected by gold wire bonding or soft arranging wire with shell
It connects, the stiffening plate is fixed in shell by screw.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910457970.7A CN110176439B (en) | 2019-05-29 | 2019-05-29 | Module SiP structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910457970.7A CN110176439B (en) | 2019-05-29 | 2019-05-29 | Module SiP structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN110176439A true CN110176439A (en) | 2019-08-27 |
| CN110176439B CN110176439B (en) | 2024-06-18 |
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| CN201910457970.7A Active CN110176439B (en) | 2019-05-29 | 2019-05-29 | Module SiP structure and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627875A (en) * | 2020-06-28 | 2020-09-04 | 中国电子科技集团公司第十四研究所 | High heat conduction heat abstractor |
| CN114594351A (en) * | 2022-03-18 | 2022-06-07 | 国网浙江省电力有限公司电力科学研究院 | Transformer bushing partial discharge monitoring chip device and method |
| CN117202545A (en) * | 2023-08-30 | 2023-12-08 | 山东航天电子技术研究所 | High-density packaging structure and packaging method of aerospace module power supply |
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