CN110164980A - A kind of fast soft-recovery diode of high pressure - Google Patents
A kind of fast soft-recovery diode of high pressure Download PDFInfo
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- CN110164980A CN110164980A CN201910439983.1A CN201910439983A CN110164980A CN 110164980 A CN110164980 A CN 110164980A CN 201910439983 A CN201910439983 A CN 201910439983A CN 110164980 A CN110164980 A CN 110164980A
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- 239000013078 crystal Substances 0.000 claims description 6
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- 238000009792 diffusion process Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 9
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Abstract
A kind of entitled fast soft-recovery diode of high pressure of the present invention.Belong to high-voltage semi-conductor diode design and manufacturing technology field.It mainly solves the problems, such as that existing high-voltage diode is not able to satisfy the reversed afterflow requirement of the above high-voltage semi-conductor device of high pressure 4000V.It is mainly characterized by comprising: the semiconductor wafer by anode P+Block or anode P+Area, the area anode P, growing base area N, cathode N+Ring, cathode P+Block and cathode N+Block composition；The anode P+Block or anode P+Area is distributed in the area anode P surface, anode P+Block or anode P+Area and anode P+Block or anode P+The area anode P between area constitutes anode region；The cathode N+Block is spaced apart on the growing base area surface N, cathode P+Block is located at cathode N+Between block, cathode P+Block and cathode N+It is isolated between block by growing base area N.The present invention has the characteristics that higher reverse BV, shorter reverse recovery time and improves the diode softness factor, is mainly used in the reversed afterflow of the devices such as IGBT, IGCT, IEGT.
Description
Technical field
The present invention relates to high-voltage semi-conductor diode design and manufacturing technology field, in particular to the soft recovery fastly of a kind of high pressure
Diode is mainly used in the reversed afterflow of the devices such as IGBT, IGCT, IEGT.
Background technique
Traditional semiconductor diode, using P+PNN+Structure, P+And N+It is distributed in anode and cathode face, such as Fig. 1 respectively
With shown in Fig. 2, according to voltage requirements difference, the area P and the area N thickness and impurities concentration distribution are adjusted；When improving fast recovery characteristics, often
PIN type structure diodes are formed with the thinned area N thickness, carrier Base Transit Time is reduced, passes through electron irradiation or heavy metal
Diffusion, reduce base area minority carrier life time, though this mode reduces reverse recovery time, because recovery characteristics compared with ' hard ' (i.e. softness because
Sub- S is smaller), it easily generates in circuit compared with high backward voltage and damages device；For high pressure (>=3000V) fast recovery diode,
The effect for reducing reverse recovery time is limited, continues to cause on-state voltage drop to deteriorate when reducing base area minority carrier life time.
Quick soft-recovery diode SIOD tube core structure is used, as shown in figure 3, its anode is by the area P diffusion into the surface high concentration
Impurity P+Area 420 constitute, cathodic region by multiple strips high concentration N+Block, two adjacent N+The Xiao Te of narrow strip is formed before area
Base area is constituted, such structure, and schottky region (N layers and metal contact zone) provides extracting channel to hole, under high voltages, greatly
Loading gage stream is collected in NN+At height knot, N+Layer, which forms hole, to be stopped, although schottky region provides extracting channel, because of sky
Cave still needs guiding through wider low doping concentration N layers, and the extraction time is still aobvious partially long, when still cannot reach optimal Reverse recovery
Between.
Using the SPEED diode chip structure of self-regulation emission effciency, as shown in figure 4, its anode region is by low concentration p-type
Impurity and multiple equally distributed high concentration p type impurity P+Area is constituted, and base area is made of low concentration N-type impurity, and cathodic region is by height
Concentration of impurities cathode N+Area 450 is constituted, and electronics passes through speed when the area P of anode-side low concentration improves diode reverse recovery
Degree improves the diode softness factor, but under high-pressure situations, because base area and the area P are still thicker, improvement is limited, diode
Reverse recovery time it is still not ideal enough.
With the continuous improvement of semiconductor devices voltage and continuing to increase for chip diameter, especially high pressure 4000V or more
It is badly in need of when IGBT, IGCT, IEGT afterflow using the fast two pole device architectures of soft recovery of new semiconductor high pressure and new semiconductor two
Pole pipe technology meets the needs of new.
Summary of the invention
The present invention is to overcome the shortcomings of prior art, is proposed a kind of with the more preferably reversed quick soft-recovery diode of high pressure
Structure, the diode and optimal parameter coordination manufactured using this structure, that is, improve reverse BV, has shorter
Reverse recovery time also substantially improves the diode softness factor.It is able to satisfy the reversed of the above high-voltage semi-conductor device of high pressure 4000V
Afterflow requirement.
Technical solution of the invention may is that a kind of fast soft-recovery diode of high pressure, including closure under shell, under
Closure on Mo wafer, injecting glue ring, semiconductor wafer, upper Mo wafer and shell, it is characterized in that: the semiconductor wafer is by anode
P+Block, the area anode P, growing base area N, cathode N+Ring, cathode P+Block and cathode N+Block composition；Wherein, the anode P+Block gap distribution
On the area anode P surface, anode P+Block and anode P+The area anode P between block constitutes anode region；Base area is the area low concentration impurity N, yin
Polar region is on the area N surface；The cathode N+Block is spaced apart on the growing base area surface N, cathode P+Block is located at cathode N+Between block, cathode P+Block and cathode N+It is isolated between block by growing base area N.
Technical solution of the invention may also is that a kind of fast soft-recovery diode of high pressure, including closure under shell,
Closure on lower Mo wafer, injecting glue ring, semiconductor wafer, upper Mo wafer and shell, it is characterized in that: the semiconductor wafer is by sun
Pole P+Area, the area anode P, growing base area N, cathode N+Ring, cathode P+Block and cathode N+Block composition；Wherein, the anode P+Area uniformly divides
Cloth is in the area anode P surface, the area anode P and anode P+Area constitutes anode region；Base area is the area low concentration impurity N, and cathodic region is in the area N table
Face；The cathode N+Block is spaced apart on the growing base area surface N, cathode P+Block is located at cathode N+Between block, cathode P+Block and cathode N+
It is isolated between block by growing base area N.
Cathode N described in the technology of the present invention solution+Block accounts for 50 ∽ 90% of the cathodic region gross area, cathode N+Block is cylinder
Or square column type, the cathode P+Block accounts for 10 ∽ 30% of the cathodic region gross area, cathode N+Block is in cathode P+During block surrounds, cathode P+
The junction depth of block is less than cathode N+The junction depth of block.
Cathode P described in the technology of the present invention solution+Block is vertical bar or moulding, and width is 80 μm of 20 ∽.
Anode P described in the technology of the present invention solution+Block accounts for 40 ∽ 88% of the anode region gross area, anode P+Block spacing is
50 200 μm of ∽, anode P+Block is cylinder or square column type.
Semiconductor wafer described in the technology of the present invention solution be N-type<100>crystal orientation high resistance monocrystalline silicon wafer or N-type<
111 > crystal orientation high resistance monocrystalline silicon wafer；The microcosmic vertical structure of semiconductor wafer inner wafer is by P+PNN+P+Structure is constituted, wherein the area P
The area P diffuseed to form using high concentration Al, anode P+It is diffuseed to form using high concentration boron, cathode P+Block uses anode P+Back-diffusion
It is formed.
Semiconductor wafer anode P described in the technology of the present invention solution+Block surface concentration is 5 × 1019∽3×1021 /
cm3, junction depth is 31 μm of 15 ∽；Anode P area's surface impurity concentration is 0.1 ∽ 9.8 × 1016 /cm3, junction depth is 125 μm of 60 ∽；Cathode
N+Ring and cathode N+Block surface impurity concentration is 0.5 ∽ 8 × 1021 /cm3, junction depth is 35 μm of 18 ∽；Cathode P+Block surface impurity is dense
Degree is 0.4 ∽ 8.5 × 1020 /cm3, junction depth is 16 μm of 4 ∽.
Semiconductor wafer anode P described in the technology of the present invention solution+Area's surface concentration is 5 × 1019∽3×1021 /
cm3, junction depth is 31 μm of 15 ∽；Anode P area's surface impurity concentration is 0.1 ∽ 9.8 × 1016 /cm3, junction depth is 125 μm of 60 ∽；Cathode
N+Ring and cathode N+Block surface impurity concentration is 0.5 ∽ 8 × 1021 /cm3, junction depth is 35 μm of 18 ∽；Cathode P+Block surface impurity is dense
Degree is 0.4 ∽ 8.5 × 1020 /cm3, junction depth is 16 μm of 4 ∽.
The present invention has the effect that
1, the adjacent N of cathode two+Increase the high concentration cathode P of narrow strip between area+Block area, cathode N+And P+It is miscellaneous by low concentration between block
Matter N isolation, substantially reduces reverse recovery time of diode；
2, Waffer edge N+Ring can be thinned N thickness and realize high blocking voltage, reduce base area carrier quantity, can also reduce two poles
The reverse recovery time of pipe；
3, the adjacent P of anode two+Between block formed narrow strip low concentration P district's groups at, reverse recovery time of diode can be reduced, optimize
P+Block accounting can greatly improve in the case where that will not influence on-state voltage drop and restore the softness factor；
4, semiconductor wafer diameter of the invention can be 38 ∽ Φ 125 of Φ, and product blocking voltage can reach 3000 ∽ 8500V,
1.0 ∽ of its reverse recovery time, 10 μ S, the softness factor are improved to 0.7 or more；Reverse recovery current is about two poles of conventional fast recovery
The 50% of pipe.
The present invention improves the reverse BV of diode, that is, has shorter reverse recovery time, also substantially improve
The diode softness factor, with high voltage, quick soft-recovery, low reverse recovery current diode characteristic, can be used for IGBT,
The devices such as the reversed afterflow of the devices such as IGCT, IEGT.
Detailed description of the invention
Fig. 1 is traditional welding fast diode chip architecture schematic diagram.
Fig. 2 is tradition crimping fast diode chip architecture schematic diagram.
Fig. 3 is chip anode P+, cathode part N+ structural schematic diagram.
Fig. 4 is chip anode part P+, cathode N+ structural schematic diagram.
Fig. 5 is a kind of fast soft-recovery diode schematic diagram of high pressure of the present invention.
Fig. 6 is semiconductor wafer of embodiment of the present invention anode P+ structural schematic diagram.
Fig. 7 is the structural schematic diagram of edge of semiconductor wafer of the embodiment of the present invention and falope ring.
Fig. 8 is edge of semiconductor wafer of the embodiment of the present invention and the structural schematic diagram with groove falope ring.
Fig. 9 is semiconductor wafer of embodiment of the present invention cathode P+, N+ arrangement architecture schematic diagram.
Figure 10 is the product schematic diagram after present invention assembly.
In figure, A- anode, K- cathode, closure under 1- shell, Mo wafer under 2-, 3- injecting glue ring, 4- semiconductor wafer, 5-
Upper Mo wafer, closure on 6- shell, 7- positioning column, 30- injecting glue ring, the anode region 41- metal layer, 42- anode P+Block, 43- sun
The pole area P, the growing base area 44- N, 45- cathode N+ ring, 46- cathode P+Block, 47- cathode N+Block, 48- cathode metal layer, 49- groove,
420- anode P+Area, 450- cathode N+Area.
Specific embodiment
Below with reference to Fig. 5 to Figure 10, the embodiment of the present invention is fully described by.Obviously, described embodiment is only
Be only a part of the invention instead of all the embodiments.It is any based on the embodiment of the present invention, those skilled in the art exist
All other embodiment obtained under the premise of creative work is not made, shall fall within the protection scope of the present invention.
Embodiment 1 is a kind of fast soft-recovery diode of high pressure, as shown in Fig. 5, Fig. 7, Fig. 9, Figure 10, by closure under shell
1, lower Mo wafer 2, injecting glue ring 3, semiconductor wafer 4, upper Mo wafer 5, closure 6 encapsulates on shell.Semiconductor wafer 4 by
Anode P+Block 42, the area anode P 43, growing base area N44, cathode N+Ring 45, cathode P+Block 46 and cathode N+Block 47 form, anode region by
The area low concentration anode P 43 and be evenly distributed in the area anode P 43 in high concentration impurities anode P+Block 42 is constituted.Base area is low
The area concentration of impurities N, cathodic region is on the area N surface, by equally distributed high concentration cathode N+47th area of block and cathode N+Ring 45, two is adjacent
Cathode N+The high concentration cathode P of narrow strip is formed between block 47+46 district's groups of block are at cathode N+Block 47 and cathode P+By low between block 46
Concentration of impurities growing base area N44 isolation.Cathode N+Block 47 accounts for 50 ∽ 90% of the cathodic region gross area, cathode N+Block 47 is cylinder or square column
Shape, cathode P+Block 46 accounts for 10 ∽ 30% of the cathodic region gross area, cathode N+Block 47 is in cathode P+During block 46 surrounds.Cathode P+Block 46 is
Vertical bar or moulding, width are 80 μm of 20 ∽.Anode P+Block 42 accounts for 40 ∽ 88% of the anode region gross area, anode P+42 spacing of block is 50 ∽
200 μm, anode P+Block 42 is cylinder or square column type.Anode P+42 area of block is less than or equal to cathode N+47 area of block, improves through-flow face
Long-pending validity.Anode P+Block 42 can not be too wide, otherwise occupies cathode flow area.
Semiconductor wafer 4 is N-type<100>crystal orientation high resistance monocrystalline silicon wafer or N-type<111>crystal orientation high resistance monocrystalline silicon wafer, is partly led
The microcosmic vertical structure of 4 inner wafer of body chip is by P+PNN+P+Structure is constituted.The wherein P that the area P uses high concentration Al to diffuse to form
Area, anode P+It is diffuseed to form using high concentration boron, cathode P+Block uses anode P+Back-diffusion is formed.Cathode dopant profiles such as Fig. 9 institute
Show, cathode N+Block 47 is uniformly distributed in cathode P+During block 46 surrounds, it is ensured that the uniformity that carrier extracts when Reverse recovery.
Anode P+42 surface concentration of block is 5 × 1019∽3×1021 /cm3, junction depth is 31 μm of 15 ∽.43 surfaces of the area anode P are miscellaneous
Matter concentration is 0.1 ∽ 9.8 × 1016 /cm3, junction depth is 125 μm of 60 ∽.Cathode N+Ring 45 and cathode N+47 surface impurity concentration of block is
0.5∽8×1021 /cm3, junction depth is 35 μm of 18 ∽.Cathode P+46 surface impurity concentration of block is 0.4 ∽ 8.5 × 1020 /cm3, junction depth
It is 16 μm of 4 ∽.Cathode P+46 surface impurity concentration of block is less than anode P+Block 42 and cathode N+47 surface impurity concentration of block, cathode P+
46 junction depth of block is less than cathode N+Ring 45 and cathode N+47 junction depth of block.
Seal cavity is formed in closure 1 and closure 6 on shell under shell, which is filled with lower than outside greatly
The inert gas of air pressure to not only guarantee that each component contacted with each other well, but also prevents chip high voltage arc.
4 edge of semiconductor wafer is as shown in fig. 7, the double negative angle table tops in two sides are equipped with annular right-angle cylinder insulation protection injecting glue
Ring 3, two-sided surface table top protection carry out table using the polyester imines, polyimides or silicon rubber of multilayer high-purity high-insulativity
Face passivation.4 yin-yang pole surface coating thickness of semiconductor wafer is the metal conducting layer of 40 μm of 10 ∽.
The Coating passivation layer of upper Mo wafer 5, lower Mo wafer 2, passivation layer are rhodium, ruthenium or silver, prevent upper and lower molybdenum circle
Piece thermal oxide improves device property stability and long-term reliability.
Lower Mo wafer 2 and 5 center of upper Mo wafer are equipped with location hole, and 6 center of closure is set on closure 1 and shell under shell
There are mounting-positioning holes, positioning hole is equipped with positioning column 7, and heated stress influence in the chip course of work is prevented to be subjected to displacement, grind
Damage.
Table top is inside and outside closure 1 under closure 6, shell on upper Mo wafer 5, the upper and lower surface of lower Mo wafer 2 and shell
Abradant surface, flatness or the depth of parallelism≤10 micron can reduce thermal resistance, overcurrent capability can be improved.
Embodiment 2 is as shown in Fig. 6, Fig. 7, Fig. 9, Figure 10, and unlike implementation 1, semiconductor wafer 4 is by anode P+Area
420, the area anode P 43, growing base area N44, cathode N+Ring 45, cathode P+Block 46, cathode N+Block 47 forms, and anode region is miscellaneous by low concentration
The area matter P and the anode P for being uniformly distributed 43 surface of the area anode P+Area 420 is constituted.Anode carrier injection area is improved, can be dropped
Low diode on-state voltage drop has shorter reverse recovery time, improves reverse BV.
Embodiment 3 is as shown in Fig. 5, Fig. 7 or Fig. 8, Fig. 9, Figure 10, and unlike implementation 1,3 superficies of injecting glue ring are set
Fluted 49, increase creepage distance, is applicable to higher voltage solution.
As the fast soft-recovery diode of a kind of high pressure that the present invention is implemented, it can be used for the anti-of the devices such as IGBT, IGCT, IEGT
To devices such as afterflows.
The above is only presently preferred embodiments of the present invention, is not intended to limit the present invention in any form.Therefore all
Be without departing from the contents of the present invention, according to the technical essence of the invention any modification made to the above embodiment, equivalent replacement,
Equivalence changes and modification still fall within the range of technical solution of the present invention protection.
Claims (8)
1. a kind of fast soft-recovery diode of high pressure, including closure (1), lower Mo wafer (2), injecting glue ring (3), semiconductor under shell
Closure (6) on chip (4), upper Mo wafer (5) and shell, it is characterized in that: the semiconductor wafer (4) is by anode P+Block
(42), the area anode P (43), growing base area N(44), cathode N+Ring (45), cathode P+Block (46) and cathode N+Block (47) composition；Wherein,
The anode P+Block (42) is distributed in the area anode P (43) surface, anode P+Block (42) and anode P+Anode between block (42)
The area P (43) constitutes anode region；The cathode N+Block (47) is spaced apart on the surface growing base area N(44), cathode P+Block (46) is located at yin
Pole N+Between block (47), cathode P+Block (46) and cathode N+It is isolated between block (47) by growing base area N(44).
2. a kind of fast soft-recovery diode of high pressure, including closure (1), lower Mo wafer (2), injecting glue ring (3), semiconductor under shell
Closure (6) on chip (4), upper Mo wafer (5) and shell, it is characterized in that: the semiconductor wafer (4) is by anode P+Area
(420), the area anode P (43), growing base area N(44), cathode N+Ring (45), cathode P+Block (46) and cathode N+Block (47) composition；Its
In, the anode P+Area (420) is evenly distributed on the area anode P (43) surface, the area anode P (43) and anode P+Area (420) constitutes sun
Polar region；The cathode N+Block (47) is spaced apart on the surface growing base area N(44), cathode P+Block (46) is located at cathode N+Block (47) it
Between, cathode P+Block (46) and cathode N+It is isolated between block (47) by growing base area N(44).
3. the fast soft-recovery diode of a kind of high pressure according to claim 1 or 2, it is characterised in that: the cathode N+Block
(47) 50 ∽ 90% of the cathodic region gross area, cathode N are accounted for+Block (47) is cylinder or square column type, the cathode P+Block (46) accounts for cathode
Area's gross area 10 ∽ 30%, cathode N+Block (47) is in cathode P+During block (46) surrounds.
4. the fast soft-recovery diode of a kind of high pressure according to claim 3, it is characterised in that: the cathode P+Block (46)
For vertical bar or moulding, width is 80 μm of 20 ∽.
5. the fast soft-recovery diode of a kind of high pressure according to claim 1 or 3, it is characterised in that: the anode P+Block
(42) 40 ∽ 88% of the anode region gross area, anode P are accounted for+Block (42) spacing is 200 μm of 50 ∽, anode P+Block (42) is cylinder or square column
Shape.
6. the fast soft-recovery diode of a kind of high pressure according to claim 1,2 or 3, it is characterised in that: the semiconductor die
Piece (4) is N-type<100>crystal orientation high resistance monocrystalline silicon wafer or N-type<111>crystal orientation high resistance monocrystalline silicon wafer；In semiconductor wafer (4) chip
The microcosmic vertical structure in portion is by P+PNN+P+Structure is constituted, the area P that wherein area P uses high concentration Al to diffuse to form, anode P+Using height
Concentration boron diffuses to form, cathode P+Block uses anode P+Back-diffusion is formed.
7. the fast soft-recovery diode of a kind of high pressure according to claim 1 or 3, it is characterised in that: the semiconductor die
Piece (4) anode P+Block (42) surface concentration is 5 × 1019∽3×1021 /cm3, junction depth is 31 μm of 15 ∽；The area anode P (43) surface
Impurity concentration is 0.1 ∽ 9.8 × 1016 /cm3, junction depth is 125 μm of 60 ∽；Cathode N+Ring (45) and cathode N+Block (47) surface impurity
Concentration is 0.5 ∽ 8 × 1021 /cm3, junction depth is 35 μm of 18 ∽；Cathode P+Block (46) surface impurity concentration is 0.4 ∽ 8.5 × 1020 /
cm3, junction depth is 16 μm of 4 ∽.
8. the fast soft-recovery diode of a kind of high pressure according to claim 2 or 3, it is characterised in that: the semiconductor die
Piece (4) anode P+Area's (420) surface concentration is 5 × 1019∽3×1021 /cm3, junction depth is 31 μm of 15 ∽；The area anode P (43) surface
Impurity concentration is 0.1 ∽ 9.8 × 1016 /cm3, junction depth is 125 μm of 60 ∽；Cathode N+Ring (45) and cathode N+Block (47) surface impurity
Concentration is 0.5 ∽ 8 × 1021 /cm3, junction depth is 35 μm of 18 ∽；Cathode P+Block (46) surface impurity concentration is 0.4 ∽ 8.5 × 1020 /
cm3, junction depth is 16 μm of 4 ∽.
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