CN104241349B - A kind of inverse conductivity type insulated gate bipolar transistor - Google Patents
A kind of inverse conductivity type insulated gate bipolar transistor Download PDFInfo
- Publication number
- CN104241349B CN104241349B CN201410488417.7A CN201410488417A CN104241349B CN 104241349 B CN104241349 B CN 104241349B CN 201410488417 A CN201410488417 A CN 201410488417A CN 104241349 B CN104241349 B CN 104241349B
- Authority
- CN
- China
- Prior art keywords
- type
- doped region
- collecting zone
- igbt
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 13
- 238000005530 etching Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
This application discloses a kind of inverse conductivity type insulated gate bipolar transistor, including colelctor electrode, p-type collecting zone, N-type tunnel doped region, N-type barrier layer, N-type drift region, MOS areas and grid.P-type collecting zone is degeneracy doped region, and fermi level enters in valence band；N-type tunnel doped region is the region that doping concentration is adulterated close to degeneracy, and fermi level is close to conduction band bottom but does not enter conduction band；The doping concentration of p-type collecting zone is higher than the doping concentration of N-type tunnel doped region.The transistor realizes reverse-conducting by introducing N-type tunnel doped region, therefore in technique making, the back side is without etching technics.At work, due to the N-type region domain without common inverse conductivity type IGBT collector terminals, the current convergence problem produced during in the absence of device forward conduction and reverse-conducting；Do not exist voltage rebound phenomenon during device forward conduction yet.
Description
Technical field
The application is related to power semiconductor, more particularly, to a kind of inverse conductivity type insulated gate bipolar transistor.
Background technology
Insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) is by metal-oxygen
Change layer-semiconductor field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor,
MOSFET) and bipolar junction transistor (Bipolar Junction Transistor, BJT) composition the emerging compound work(of a class
Rate semiconductor devices, is mainly used in the high-power scope of mesohigh.
IGBT works together with inductive load in many applications, than H bridge constructions as shown in Figure 1, ac electrode conduct
Inductive load, four IGBT and reverse diodes in parallel, i.e. IGBT-1, IGBT-2, IGBT-3 and IGBT-4 respectively with reversely
Diodes in parallel, play a part of afterflow and protection.MIT 2004 in the form of longitudinal direction by diode collection
Into to IGBT, as shown in Fig. 2 this structure is called inverse conductivity type insulated gate bipolar transistor (Reverse Conducting-
Insulated Gate Bipolar Transistor, RC IGBT), it includes colelctor electrode 201, p-type collecting zone 202, N-type collection
Electric area 203, N-type barrier layer 204, N-type drift region 205, p-type base 206, N+ launch sites 208, emitter stage 209 and grid 213.
When grid 213 is not added with voltage, 209 high potential of emitter stage, the IGBT can also be turned on.The advantage of this inverse conductivity type structure be it is aobvious and
It is clear to：Component number in saving system；Diode is integrated into IGBT, a terminal is shared, silicon chip consumption is less；Technique
Cost reduction, two devices can be encapsulated together.
However, the back side current collection region of the inverse conductivity type IGBT of tradition needs to make N-type collecting zone and p-type collecting zone, the back side needs
Want pattern-making so that the yield rate reduction of thin slice IGBT.If additionally, N areas ratio is too small, current convergence may be caused,
CURRENT DISTRIBUTION is uneven, then the current density that the inverse conductivity type IGBT of tradition can be turned under safe working conditions can not be too big；If N
Area's ratio is excessive, then during device forward conduction it is possible that voltage rebound phenomenon, as shown in figure 3, in same voltage
Correspondence multiple current value in value, when device is used in parallel, is susceptible to a device and takes the lead in entering high current working condition, separately
One, also in the situation of low current high-impedance state, may so cause device to be burned out.
The content of the invention
This application provides a kind of inverse conductivity type insulated gate bipolar transistor that reverse-conducting is realized by tunnel-effect, this
Invention avoids the pattern process of collecting zone manufacturing process, it is to avoid general inverse voltages of the conductivity type IGBT during forward conduction
Rebound phenomenon.Due to not needing photolithographic fabrication N+ current collections region at the back side of device, so present invention is particularly suitable for thin slice
Inverse conductivity type IGBT structure.
According to an aspect of the present invention, there is provided a kind of inverse conductivity type insulated gate bipolar transistor, including p-type collecting zone, N-type
Tunnel doped region, N-type barrier layer, N-type drift region and MOS areas, the bottom of p-type collecting zone are provided as the electricity of colelctor electrode extraction
Pole, is followed successively by N-type tunnel doped region, N-type barrier layer, N-type drift region and MOS areas above p-type collecting zone；P-type collecting zone is
Degeneracy doped region, fermi level enters in valence band；N-type tunnel doped region is the region that doping concentration is adulterated close to degeneracy, is taken
Energy level is close to conduction band bottom but does not enter conduction band for rice；The doping concentration of p-type collecting zone is higher than the doping concentration of N-type tunnel doped region.
MOS areas include the p-well base above the N-type drift region, the P+ launch sites above p-well base and N+ launch sites and
From the electrode as emitter stage that the top of P+ launch sites and N+ launch sites is drawn.The transistor also includes being located at N-type drift region
Top Bing Bei MOS areas surround grid, grid include polysilicon gate, gate oxide and gate electrode, gate oxide cladding it is many
Crystal silicon grid, gate electrode is drawn from polysilicon gate.
The beneficial effect of the application is that the colelctor electrode back side does not need pattern process, real by introducing N-type tunnel doped region
Existing reverse-conducting, therefore in technique making, the back side is without etching technics.At work, due to without common inverse conductivity type IGBT
The N-type region domain of collector terminal, in the absence of the excessive or too small situation of N-type regional percentage, therefore device forward and reverse electric conduction
Current density distribution it is completely the same, in the absence of N-type regional percentage it is too small and produce current convergence problem, make this against conductivity type device
The working current density steady operation that is able to be lifted without influenceing device；Meanwhile, during in forward conduction, in the absence of N-type region
The voltage rebound phenomenon that domain ratio is excessive and produces.
Brief description of the drawings
Fig. 1 is the H bridge application scenarios schematic diagrams of traditional insulated gate bipolar transistor；
Fig. 2 is the structural representation of traditional inverse conductivity type insulated gate bipolar transistor；
Fig. 3 is the i-v curve figure of traditional inverse conductivity type insulated gate bipolar transistor；
Fig. 4 is the structural representation of the RC IGBT of the specific embodiment of the invention；
Fig. 5 is the PN junction that the p-type collecting zone of the RC IGBT of the specific embodiment of the invention and N-type tunnel doped region are formed
Energy band diagram during in the balance of voltage；
Fig. 6 is the PN junction that the p-type collecting zone of the RC IGBT of the specific embodiment of the invention and N-type tunnel doped region are formed
Energy band diagram during in forward voltage bias；
Fig. 7 is the PN junction that the p-type collecting zone of the RC IGBT of the specific embodiment of the invention and N-type tunnel doped region are formed
Energy band diagram during in reverse voltage bias；
Fig. 8 is the RC IGBT of the specific embodiment of the invention with traditional RC IGBT forward conduction IcVc characteristic curves
Figure；
Fig. 9 be the RC IGBT of the specific embodiment of the invention N-type tunnel doped region be in different-thickness when forward conduction
IcVc performance diagrams；
Figure 10 is the RC IGBT of the specific embodiment of the invention with traditional RC IGBT reverse-conducting IcVc characteristic curves
Figure；
Figure 11 is dividing with the forward and reverse conducting current density of traditional RC IGBT for the RC IGBT of the specific embodiment of the invention
Butut；
Figure 12 be the RC IGBT of the specific embodiment of the invention with the turn off process current density of traditional RC IGBT at any time
Between changing trend diagram；
Figure 13 is the reversely restoring process current density with traditional RC IGBT of the RC IGBT of the specific embodiment of the invention
Change with time tendency chart.
Specific embodiment
The present invention is described in further detail below by specific embodiment combination accompanying drawing.
Embodiment one：
The structural representation of the RC IGBT of the specific embodiment of the invention is illustrated in figure 4, the RCIGBT of the present embodiment includes
P-type collecting zone 02, N-type tunnel doped region 03, N-type barrier layer 04, N-type drift region 05 and MOS areas, the bottom of p-type collecting zone sets
The electrode 01 drawn as colelctor electrode is put, N-type tunnel doped region, N-type barrier layer, N-type drift are followed successively by above p-type collecting zone
Area and MOS areas；P-type collecting zone is degeneracy doped region, and fermi level enters in valence band；N-type tunnel doped region is doping concentration
Close to the region of degeneracy doping, fermi level is close to conduction band bottom but does not enter conduction band；The doping concentration of p-type collecting zone is than N-type tunnel
The doping concentration of road doped region is high.MOS areas include p-well base 06, the P above p-well base above N-type drift region
+ launch site 07 and N+ launch sites 08 and the electrode 09 as emitter stage drawn from the top of P+ launch sites and N+ launch sites.
The transistor also includes the grid surrounded positioned at the top Bing Bei MOS areas of N-type drift region, and grid includes polysilicon gate 10, grid oxygen
Change layer 11 and gate electrode 12, gate oxide cladding polysilicon gate, gate electrode is drawn from polysilicon gate.
The doping concentration scope of N-type tunnel doped region is 8 × 1018cm-3To 2 × 1019cm-3, the doping of p-type collecting zone is dense
Spend is 2 × 1020cm-3More than, the parameter value in this number range is all suitable, the RC in this specific embodiment
The design parameter of IGBT is as shown in the table, and listed numerical value is a kind of citing of specific embodiment, has simply selected such parameter
To reflect the superperformance of RC IGBT of the present invention, device is realized by analogue simulation software SENTAURUS.
| Device parameters | Numerical value |
| Silicon wafer thickness L (μm) | 70 |
| Polysilicon gate thickness Lt (μm) | 3.2 |
| N-type tunnel doped region thickness Ld (μm) | 0.1 |
| P-type collecting zone thickness Lc (μm) | 0.4 |
| N-type barrier layer thickness Ls (μm) | 5 |
| Gate oxide thickness tox (μm) | 0.04 |
To compare in this specific embodiment RC IGBT (hereinafter referred to as new RC IGBT, structure is as shown in Figure 4) and passing
The performance of system RC IGBT (structure is as shown in Figure 2), sets the parameter of tradition RC IGBT, and traditional RC IGBT are relative to new RC
IGBT has 2 points of differences in structure：First, lack N-type tunnel doped region；Second, collecting zone is by N-type collecting zone and p-type collection
Electric area alternately constitutes, and N-type collecting zone is identical with the doping concentration of p-type collecting zone and p-type collecting zone of equal to new RC IGBT is mixed
Miscellaneous concentration.Remaining structural parameters of traditional RC IGBT set identical with this specific embodiment.
The explanation of the forward and reverse conducting mechanism on new RC IGBT, new RC IGBT performances are able to the key for being lifted
The PN junction that to be p-type collecting zone formed with N-type tunnel doped region.From the doping concentration in parameter list, p-type collector area
It is highly doped regions, is degeneracy doped semiconductor, fermi level enters in valence band；N-type tunnel doped region adulterates for higher concentration
Region, doping concentration is disposed proximate to degeneracy doping, and fermi level is close to conduction band bottom but does not enter conduction band.PN junction is flat in voltage
Energy band diagram during weighing apparatus as shown in figure 5, figure left side (scope of abscissa is 0.05-0.10 μm) can band be p-type collecting zone energy band,
For degeneracy adulterates；Figure right side (i.e. the scope of abscissa is 0.10-0.15 μm) can be close with being N-type tunnel doped region energy band
Degeneracy adulterates.Now, dissufion current (concentration difference of PN junction both sides carrier) and drift current (built-in field) are equal in magnitude, side
To conversely, being in a dynamic equilibrium, diode does not have electric current to flow through.
P-type collecting zone is in energy band diagram such as Fig. 6 institutes during forward voltage bias with the PN junction that N-type tunnel doped region is formed
Show, i.e., the energy band diagram when potential of p-type collecting zone is higher than N-type tunnel doped region.The barrier effect of PN junction built in field is additional
Voltage offset and substantially reduce, a large amount of carriers enter opposite side by diffusion, and diode realizes forward conduction.Due to big
Amount carrier enters the semiconductor of opposite side, when the carrier concentration profile in material compares thermal equilbrium state, there occurs very big
Change, this process is called the injection of nonequilibrium carrier.It can be seen that the forward conduction process of new RC IGBT and tradition RC
IGBT is almost not different.
Mechanism on tunnel-effect, is illustrated in figure 7 at the PN junction that p-type collecting zone is formed with N-type tunnel doped region
Energy band diagram when reverse voltage bias, the i.e. potential of p-type collecting zone are less than energy band diagram during N-type tunnel doped region.In PN junction
Both sides, N-type tunnel doped region conduction band has substantial amounts of empty quantum state, is not occupied by an electron, and Fermi's energy in p-type collecting zone valence band
Quantum state below level be can consider and be occupied by an electron completely, and the energy level for having same energy size is overlapped.In p-type collecting zone
Valence-band electrons can be tunneling in N-type tunnel doped region conduction band by quantum effect, produce reverse tunnel electric current.Additional negative electricity
Pressure numerical value is bigger, can be bigger with overlapping ranges, and p-type collecting zone valence band occurs the electricity of tunnel-effect to N-type tunnel doped region conduction band
Subnumber is also more, and reverse tunnel electric current can be greatly increased.As can be seen that the reverse-conducting of new RC IGBT is imitated by tunnel
Should realize, and tradition RC IGBT can only be realized reversely due to the presence without tunnel knot by integrated PIN diode
Conducting.
Below by way of to new RC IGBT and tradition RC IGBT in forward conduction IcVc characteristics, reverse-conducting IcVc characteristics
And the contrast of the aspect such as turn-off characteristic, liftings of the new RC IGBT in performance is described further.
(1) forward conduction IcVc characteristics
Forward conduction IcVc characteristic curves between new RC IGBT (TRC IGBT) and tradition RC IGBT are to such as Fig. 8
It is shown.It can be seen that there is obvious voltage rebound phenomenon in tradition RC IGBT, during in forward conduction state, due to being integrated with
PIN diode causes traditional RC IGBT to experienced monopole conducting (only electronic current) to bipolar-conduction (electronic current hole electricity
Stream simultaneously exist) transfer process；And the back side collecting zone of new RC IGBT is unified p-type doping, in forward conduction shape
During state, bipolar-conduction can be directly entered, therefore completely avoid voltage rebound phenomenon.
The forward conduction IcVc characteristics for being illustrated in figure 9 new RC IGBT when N-type tunnel doped region is in different-thickness are bent
Line.N-type tunnel doped region thickness is bigger, and the effect stopped to hole injection is stronger, and the electric current of device is gradually reduced.In addition can be with
See that the addition of highly doped N-type tunnel doped region does not have the big injection effect to the forward conduction of tunnel-effect RC IGBT
Have a huge impact.
(2) reverse-conducting IcVc characteristics
Reverse-conducting IcVc characteristic curves such as Figure 10 institutes between new RC IGBT (TRC IGBT) and tradition RC IGBT
Show, it can be seen that the reverse-conducting pressure drop ratio tradition RC IGBT of new RC IGBT are big, because during reverse-conducting, due to
N-type tunnel doped region is disposed proximate to the doping concentration of degeneracy doping, and PN junction reverse-conducting also needs to a voltage by two-layer half
Band difference between conductor is widened, and tunnel-effect can just greatly increased, and forms tunnelling current, therefore reverse-conducting characteristic is
Loss.
(3) forward and reverse conducting current density distribution character
The forward and reverse conducting current density J profiles versus of new RC IGBT and tradition RC IGBT are as shown in figure 11, can be with
No matter finding out that, for forward conduction or reverse-conducting, the CURRENT DISTRIBUTION of traditional RC IGBT is all very uneven, and this is also due to
Inevitable outcome caused by integrated PIN diode, according to explanation, the inhomogeneities distribution of electric current can have a strong impact on device during conducting
Trouble free service.But for new RC IGBT whether forward conduction state or reverse-conducting state, structure in transverse direction
Uniformity causes that the electric current distribution of device is highly uniform.
(4) turn-off characteristic
The turn off process current density of new RC IGBT and tradition RC IGBT with time t variation tendency such as Figure 12 institutes
Show, it can be seen that two curves are almost completely superposed, illustrate the number of cavities stored in device drift region under conducting state almost
Unanimously, the corresponding tail currents of hole-recombination process after beginning to turn off are about the same.
(5) reverse recovery characteristic
The current density of the reversely restoring process of new RC IGBT and tradition RC IGBT is with the variation tendency of time t as schemed
Shown in 13, for traditional RC IGBT, because the current convergence near colelctor electrode is in N-type collecting zone, so current density ratio
It is larger；And for new RC IGBT, in whole collecting zone, current density is only the 25% of traditional RC IGBT to CURRENT DISTRIBUTION
Left and right, therefore the peak point current of its reverse recovery characteristic curve is lower, the softness factor is bigger, for reducing device power consumption, preventing
Transistor burns effect very much.
Above content is to combine specific embodiment further description made for the present invention, it is impossible to assert this hair
Bright specific implementation is confined to these explanations.For general technical staff of the technical field of the invention, do not taking off
On the premise of present inventive concept, some simple deduction or replace can also be made.
Claims (8)
1. it is a kind of against conductivity type insulated gate bipolar transistor, it is characterised in that including p-type collecting zone, N-type tunnel doped region, N-type
Barrier layer, N-type drift region and MOS areas, the bottom of the p-type collecting zone are provided as the electrode of colelctor electrode extraction, the p-type collection
N-type tunnel doped region, the N-type barrier layer, the N-type drift region and the MOS areas are followed successively by above electric area；It is described
P-type collecting zone is degeneracy doped region, and fermi level enters in valence band；N-type tunnel doped region is doping concentration close to letter
And the region adulterated, fermi level is close to conduction band bottom but does not enter conduction band, and the energy difference of fermi level to conduction band is less than Fermi's energy
Energy difference of the level to valence band；The doping concentration of p-type collecting zone is higher than the doping concentration of N-type tunnel doped region.
2. transistor as claimed in claim 1, it is characterised in that the doping concentration scope of N-type tunnel doped region isExtremely
3. transistor as claimed in claim 1 or 2, it is characterised in that the fermi level and conduction band of N-type tunnel doped region
Energy difference be 0.01~0.03eV.
4. transistor as claimed in claim 1 or 2, it is characterised in that the thickness of N-type tunnel doped region is 0.1-0.4 μ
m。
5. transistor as claimed in claim 1, it is characterised in that the doping concentration of the p-type collecting zone is
More than.
6. transistor as claimed in claim 1, it is characterised in that the MOS areas include being located above the N-type drift region
P-well base, the P+ launch sites above the p-well base and N+ launch sites and from the upper of P+ launch sites and N+ launch sites
The electrode as emitter stage that side draws.
7. transistor as claimed in claim 6, it is characterised in that also including positioned at the top of the N-type drift region and by institute
The grid of MOS areas encirclement is stated, the grid includes polysilicon gate, gate oxide and gate electrode, and the gate oxide cladding is more
Crystal silicon grid, the gate electrode is drawn from polysilicon gate.
8. transistor as claimed in claim 1, it is characterised in that the concentration on the N-type barrier layer is, it is thick
Spend is 4-6 μm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410488417.7A CN104241349B (en) | 2014-09-22 | 2014-09-22 | A kind of inverse conductivity type insulated gate bipolar transistor |
| PCT/CN2015/077105 WO2016045373A1 (en) | 2014-09-22 | 2015-04-21 | Reverse conduction insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410488417.7A CN104241349B (en) | 2014-09-22 | 2014-09-22 | A kind of inverse conductivity type insulated gate bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104241349A CN104241349A (en) | 2014-12-24 |
| CN104241349B true CN104241349B (en) | 2017-06-20 |
Family
ID=52229112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410488417.7A Active CN104241349B (en) | 2014-09-22 | 2014-09-22 | A kind of inverse conductivity type insulated gate bipolar transistor |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104241349B (en) |
| WO (1) | WO2016045373A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241349B (en) * | 2014-09-22 | 2017-06-20 | 北京大学深圳研究生院 | A kind of inverse conductivity type insulated gate bipolar transistor |
| CN113725295B (en) * | 2021-09-01 | 2023-08-11 | 电子科技大学 | Reverse-conduction MOS gate-controlled thyristor and manufacturing method thereof |
| CN116314309B (en) * | 2023-05-23 | 2023-07-25 | 四川奥库科技有限公司 | Back gate structure of reverse-conduction IGBT device and processing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872113A (en) * | 2012-12-13 | 2014-06-18 | 中国科学院微电子研究所 | Tunneling type reverse guide IGBT and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4840482B2 (en) * | 2008-10-14 | 2011-12-21 | 株式会社デンソー | Semiconductor device |
| JP5695343B2 (en) * | 2010-05-13 | 2015-04-01 | 株式会社豊田中央研究所 | Semiconductor device |
| JP2012256628A (en) * | 2011-06-07 | 2012-12-27 | Renesas Electronics Corp | Igbt and diode |
| US9362349B2 (en) * | 2012-06-21 | 2016-06-07 | Infineon Technologies Ag | Semiconductor device with charge carrier lifetime reduction means |
| CN104241349B (en) * | 2014-09-22 | 2017-06-20 | 北京大学深圳研究生院 | A kind of inverse conductivity type insulated gate bipolar transistor |
-
2014
- 2014-09-22 CN CN201410488417.7A patent/CN104241349B/en active Active
-
2015
- 2015-04-21 WO PCT/CN2015/077105 patent/WO2016045373A1/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872113A (en) * | 2012-12-13 | 2014-06-18 | 中国科学院微电子研究所 | Tunneling type reverse guide IGBT and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| "Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode";Huaping Jiang et al;《IEEE ELECTRON DEVICE LETTERS》;20121026;第33卷(第12期);第1684-1686页，图1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104241349A (en) | 2014-12-24 |
| WO2016045373A1 (en) | 2016-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105322002B (en) | Reverse conduction IGBT | |
| CN107195678B (en) | A kind of superjunction IGBT of carrier storage enhancing | |
| CN101393928A (en) | Tunnel IGBT with anode in short circuit | |
| CN113571415B (en) | IGBT device and manufacturing method thereof | |
| CN108242465A (en) | A kind of door pole stream-exchanging thyristor and preparation method thereof | |
| CN104241349B (en) | A kind of inverse conductivity type insulated gate bipolar transistor | |
| CN104299991A (en) | Semiconductor device | |
| CN108336085A (en) | A kind of small island thyristor electrostatic protection device of grid insertion | |
| CN107305909A (en) | A kind of inverse conductivity type IGBT back structure and preparation method thereof | |
| JP2020031222A (en) | Semiconductor device | |
| CN105914192A (en) | Semiconductor packaging structure based on cascading circuit | |
| CN106067799B (en) | A kind of semiconductor devices | |
| CN104882475B (en) | Double channel superjunction IGBT | |
| CN116646401B (en) | Silicon carbide heterojunction cascode MOSFET device | |
| CN102637733B (en) | Super junction insulated-gate bipolar transistor | |
| CN106129125B (en) | Three ends carry the lateral constant current device and its manufacturing method of safeguard function | |
| CN107068742A (en) | The semiconductor devices of primitive cell structure is embedded in discontinuous p-type base | |
| CN106960867A (en) | A kind of insulated-gate bipolar transistor device | |
| WO2023109124A1 (en) | Igbt device | |
| CN104638022B (en) | A kind of SOI transverse directions current regulator diode and its manufacture method | |
| CN103531620A (en) | Insulated gate bipolar translator (IGBT) chip based on N-type injection layers and manufacturing method thereof | |
| CN114497190B (en) | Semiconductor device with non-uniformly distributed space life and manufacturing method | |
| CN108389899A (en) | RC-IGBT devices and its process | |
| CN105870176A (en) | Silicon carbide BJT (bipolar junction transistor) | |
| CN103839992A (en) | Structure and preparation method of power device - TI - IGBT |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20141224 Assignee: QIANHAI JUYING (SHENZHEN) PRECISION TECHNOLOGY Co.,Ltd. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980004832 Denomination of invention: A reverse conduction insulated gate bipolar transistor Granted publication date: 20170620 License type: Common License Record date: 20240424 |
|
| EE01 | Entry into force of recordation of patent licensing contract |