CN110148657A - LED chip and manufacturing method with nanoparticle coating - Google Patents
LED chip and manufacturing method with nanoparticle coating Download PDFInfo
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- CN110148657A CN110148657A CN201910454776.3A CN201910454776A CN110148657A CN 110148657 A CN110148657 A CN 110148657A CN 201910454776 A CN201910454776 A CN 201910454776A CN 110148657 A CN110148657 A CN 110148657A
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- 239000002105 nanoparticle Substances 0.000 title claims abstract description 59
- 238000000576 coating method Methods 0.000 title claims abstract description 52
- 239000011248 coating agent Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004020 conductor Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
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- 229910002601 GaN Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
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- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000005137 deposition process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
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- 229910052718 tin Inorganic materials 0.000 description 2
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- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- 239000002019 doping agent Substances 0.000 description 1
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- 239000007792 gaseous phase Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention proposes a kind of LED chip and manufacturing method with nanoparticle coating, it is characterised by comprising: substrate, the first conductive type semiconductor layer formed over the substrate, the active layer formed on a part of region of the first conductive type semiconductor layer, the second conductive type semiconductor layer formed on the active layer, the nanoparticle coating formed on the second conductive type semiconductor layer, the second electrode for constituting the first electrode being electrically connected with the first conductive type semiconductor layer and being electrically connected with the second conductive type semiconductor layer composition；The refractive index of the nanoparticle coating is between the second conductive type semiconductor layer and the refractive index of air.Its is low in cost, manufacture craft is simple, its core innovative point is to realize the effect for reducing the total reflection in LED chip light extraction process using the scheme of nanoparticle coating, to improve the exterior light release efficiency of LED chip, there is good market application prospect.
Description
Technical field
The invention belongs to LED chip manufacturing field more particularly to a kind of LED chips and manufacture with nanoparticle coating
Method.
Background technique
Semiconductor light-emitting elements are when applying forward voltage to light-emitting component, the hole of p type semiconductor layer and N-type semiconductor
The electronics of layer is compound, discharges the light having with band-gap energy respective wavelength.Gallium nitride-based semiconductor (AlxInyGa1-x-yN；0≤x≤1, 0≤y≤1, 0≤x+y≤1) by the different ratio of aluminium, indium and gallium, the light of various wavelength can be discharged, thus as luminous member
The material of part and attract tremendous attention.
Refractive index inside gallium nitride-based semiconductor is about 2.4, is much larger than air refraction (n=1).Therefore, gallium nitride base
LED is easy to happen total reflection phenomenon in light out.At this point, light critical angle is no more than 23 °, the light of generation only has one minimum
Divide the outside for being discharged into LED, this becomes the main reason for light efficiency is insufficient.
Low smooth release efficiency problem caused by order to reduce because of inner full-reflection, the prior art is generally by making gallium nitride base
The increased method of the roughness at the interface that semiconductor is contacted with air.As to gallium nitride semiconductor surface or transparency conducting layer
Surface is patterned and is etched and make the increased method of surface roughness etc..But etching work procedure needs to utilize expensive system
Device is made to execute, thus manufacturing expense is caused to increase.
Summary of the invention
In order to fill up the deficiency and blank in the prior art, the present invention is intended to provide it is a kind of for reduce manufacturing expense,
Increase the light emitting diode construction and manufacturing method of exterior light release efficiency, the present invention specifically uses following technical scheme:
A kind of LED chip with nanoparticle coating characterized by comprising substrate, first formed over the substrate
Conductive-type semiconductor layer, the active layer formed on a part of region of the first conductive type semiconductor layer, in the activity
The second conductive type semiconductor layer that is formed on layer, the nanoparticle coating formed on the second conductive type semiconductor layer, with
The first conductive type semiconductor layer constitutes the first electrode of electrical connection and constitutes with the second conductive type semiconductor layer
The second electrode of electrical connection；Refraction of the refractive index of the nanoparticle coating between the second conductive type semiconductor layer and air
Between rate.
Preferably, the material of the nanoparticle coating includes Al2O3、Si3N4、SiO2At least one of.
Material described in be provided with transparency conducting layer on nanoparticle coating；Second conductive semiconductor layer is p-type half
Conductor layer, the transparency conducting layer are ITO or ZnO or metallic film.
Material described in further include having between substrate and the first conductive type semiconductor layer: buffer layer formed on a substrate and
The non-impurity-doped semiconductor layer formed on the buffer layer；The buffer layer is low-temperature gan layer or AlN layers.
A kind of manufacturing method of the LED chip with nanoparticle coating, which comprises the following steps:
Step S1: the first conductive type semiconductor layer is formed on the substrate；
Step S2: active layer is formed on the first conductive type semiconductor layer；
Step S3: the second conductive type semiconductor layer is formed on the active layer
Step S4: a part of region of the second conductive type semiconductor layer and active layer is etched to make the first conductive type partly lead
Expose in a part of region of body layer；
Step S5: nanoparticle coating is formed on the second conductive type semiconductor layer；
Step S6: it is formed with the first electrode of the first conductive type semiconductor layer electrical connection and with the second conductive type partly
The second electrode of conductor layer electrical connection.
Preferably, step S5 specifically includes the following steps:
Step S51: by Al2O3、Si3N4、SiO2One of nano particle or it is a variety of be scattered in water or organic solvent, formed outstanding
Supernatant liquid；
Step S52: the suspension is coated on the second conductive type semiconductor layer, forms nanoparticle coating.
And step S53: the nanoparticle coating is heat-treated.
The main advantage of the present invention and optimal technical scheme is that low in cost, manufacture craft is simple, core innovative point
It is to realize the effect for reducing the total reflection in LED chip light extraction process using the scheme of nanoparticle coating, to mention
The exterior light release efficiency of high LED chip has good market application prospect.
Detailed description of the invention
The present invention is described in more detail with reference to the accompanying drawings and detailed description:
Fig. 1 is structural schematic diagram of the embodiment of the present invention；
Fig. 2 is flow process of embodiment of the present invention schematic diagram 1；
Fig. 3 is flow process of embodiment of the present invention schematic diagram 2；
Fig. 4 is flow process of embodiment of the present invention schematic diagram 3；
Fig. 5 is flow process of embodiment of the present invention schematic diagram 4；
Fig. 6 is flow process of embodiment of the present invention schematic diagram 5；
In figure: 10- substrate；20- light emitting structure body；21- the first conductive type semiconductor layer；23- active layer；25- the second conductive type
Semiconductor layer；31- first electrode；33- second electrode；40- nanoparticle coating；41- nano particle；50- mask pattern.
Specific embodiment
For the feature and advantage of this patent can be clearer and more comprehensible, hereafter structure of the invention spy is made detailed for embodiment
It is described as follows:
As shown in Figure 1, the structure of LED chip provided in this embodiment specifically includes: substrate 10；First formed on substrate 10
Conductive-type semiconductor layer 21；The active layer 23 formed on a part of region of the first conductive type semiconductor layer 21；In active layer
The second conductive type semiconductor layer 25 formed on 23；The nanoparticle coating 40 formed on the second conductive type semiconductor layer 25；
The first electrode 31 being electrically connected with the first conductive type semiconductor layer 21；And be electrically connected with the second conductive type semiconductor layer 25
Second electrode 33.
Wherein, substrate 10 can use any known substance that can be used for gallium nitride based light emitting diode substrate, such as
One of SiC, Si, GaN, ZnO, GaAs, GaP, LiAl2O3, BN and AlN.The effect of substrate 10 is to nitrogenize high-quality
Gallium light emitting structure body 20 can grow and can reflect the light issued from active layer 23, preferably can be with to improve light extraction efficiency
Image conversion substrate on probation with relief pattern.
Gallium nitride base light emitting structural body 20 is formed on substrate 10.Firstly, the first conductive type semiconductor layer 21 is in substrate
It is formed on 10.Active layer 23 is formed on the first conductive type semiconductor layer 21.The second conductive type is formed on active layer 23
Semiconductor layer 25.The second conductive type semiconductor layer 25 and active layer 23 are only in a part of region of the first conductive type semiconductor layer 21
Upper formation exposes a part of region of residue of the first conductive type semiconductor layer 21.
Light emitting structure body 20 as gallium nitride-based semiconductor AlxInyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤
1), the first conductive type semiconductor layer 21 and the second conductive type semiconductor layer 25 have mutually opposite conductivity type (respectively N-shaped half
Conductor layer or p-type semiconductor layer).N-type doping substance can be silicon Si, germanium Ge or tin Sn, and p-type dopant can be magnesium Mg, zinc
Zn or cadmium Cd.Active layer 23 can be used with single quantum well structure or multiple quantum trap structure.Such as use multiple quantum trap knot
The semiconductor layer that the active layer of structure preferably the uses band gap big structure cross layered with small semiconductor layer.
Nanoparticle coating 40 is formed in the upper surface of the second conductive type semiconductor layer 25.Nanoparticle coating 40 have than
The low refractive index of the gallium nitride-based semiconductor substance of light emitting structure body 20 is constituted, and includes the object with the refractive index higher than air
Matter (1 < n < 2.4).Nanoparticle coating can be metal oxide or metal nitride nano particle with high light transmittance.Example
Such as, nanoparticle coating can be using one of Al2O3, Si3N4, SiO2 or their mixture.
The nano particle for constituting nanoparticle coating 40 can have various form.Nano particle can have such as ball
Shape, cylinder, cone or pyramidal various form, can be the non-type nano particle without set form.It receives
Rice grain coating 40 reduces the refractive index difference occurred in the second conductive type semiconductor layer 25 with Air Interface periodically, adjusts
Section is incident on the incidence angle of the light at interface from active layer, reduces total reflection, so as to increase the exterior light of light emitting diode
Release efficiency.
It is formed with the first electrode 31 being electrically connected with the first conductive type semiconductor layer 21.First electrode 31 can be in non-shape
Shape on a part of region of Viability layer 23 and the second conductive type semiconductor layer 25 and the first conductive type semiconductor layer 21 exposed
At.
The second electrode 33 being electrically connected with the second conductive type semiconductor layer 25 shape on the second conductive type semiconductor layer 25
At.In order to be electrically connected second electrode 33 successfully with the second conductive type semiconductor layer 25, nanoparticle coating 40 is except the
It is formed except two 33, electrode forming regions.
When the second conductive type semiconductor layer 25 is p-type semiconductor layer, in order to overcome low conductivity, make the uniform expansion of electric current
It dissipates, transparency conducting layer can be formed on nanoparticle coating 40.The transparency conducting layer conductive material high as light transmission rate,
It can be ITO, ZnO or metallic film.
In order to improve the crystalloid of light emitting structure body 20, preferably, can also be formed on substrate 10 buffer layer and
Non-impurity-doped semiconductor layer.Buffer layer can be the GaN layer grown at low temperature or AlN layers.Non-impurity-doped semiconductor layer can be with foot
The thickness of defect caused by reduce differences between lattice constant and the thermal expansion coefficient difference because of substrate 10 and gallium nitride-based semiconductor
Degree is formed.
As shown in Fig. 2-Fig. 6, which show the specific implementation flows of the present embodiment technique.
As shown in Fig. 2, preparing substrate 10 first.Substrate 10 as make gallium nitride-based semiconductor grow substrate 10,
Patterned substrate can preferably be used.
As shown in figure 3, light emitting structure body 20 is grown on substrate 10.Light emitting structure body 20 is by the first conductive type semiconductor layer
21, active layer 23 and the second conductive type semiconductor layer 25 are successively grown, using not homologous in a chamber, so as to continuous
Growth.That is, the first conductive type semiconductor layer 21, active layer 23 and the second conductive type semiconductor layer 25 can be by means of chemical gaseous phases
Sedimentation (Chemical vapor deposition, CVD) and formed, or can be by means of such as physical vapour deposition (PVD)
(Physical vapor deposition), sputtering (sputtering), hydrogen vapour deposition process (Hydride vapor phase
Epitaxy, HVPE) or atomic layer deposition (Atomic layer deposition) conventional deposition method and formed.At this point,
Although it is not shown, but for the high-quality crystalline growth of light emitting structure body 20, buffering is formed to the property of can choose on substrate 10
Layer and non-impurity-doped semiconductor layer.
As shown in figure 4, a part of region of the second conductive type semiconductor layer 25 and active layer 23 is etched, the first conductive type
Expose in a part of region of semiconductor layer 21.Thus, it is possible to form first electrode 31, shape on the first conductive type semiconductor layer 21
At for the region of 20 conducting electric current of light emitting structure body.
As shown in figure 5, forming mask pattern 50 on light emitting structure body 20.Mask pattern 50 makes to be formed with nano particle painting
Expose in the region of layer 40.Mask pattern 50 can be formed by the process of such as photoetching.In mask pattern 50 and light emitting structure
Nanoparticle coating 40 is formed on body 20.Nanoparticle coating 40 is that coating makes to have lower than gallium nitride-based semiconductor and be higher than sky
Suspension that the nano particle of the substance of the refractive index of gas is scattered in water or organic solvent etc. and formed.In order to which uniform coating is outstanding
The well known method for solution coating of such as dip-coating, roller coating, spraying or spin coating can be used in supernatant liquid.Mask pattern 50 is removed
(lift-off), so that nanoparticle coating 40 is only formed on a part of region of the second conductive type semiconductor layer 25.Pass through
The solution process of nano granule suspension is utilized and forms nanoparticle coating 40, thus without such as formation nanostructure
Deposition needed for object, patterned expensive process, can inexpensively mass production.
As shown in fig. 6, being heat-treated to light emitting structure body 20 and nanoparticle coating 40, so that nanoparticle coating 40
It is bonded on the second conductive type semiconductor layer 25.
As shown in Figure 1, the LED chip being ultimately produced further includes being formed with the first conductive type semiconductor layer 21 electrically
The first electrode 31 of connection and the second electrode 33 being electrically connected with the second conductive type semiconductor layer 25.First electrode 31 and second
Electrode 33 can by means of such as physical vapour deposition (PVD) (Physical vapor deposition), sputtering (sputtering),
Hydrogen vapour deposition process (Hydride vapor phase epitaxy, HVPE) or atomic layer deposition (Atomic layer
Deposition well known deposition method) and formed.
Specifically, the first conductive type semiconductor layer 21 can be n-type semiconductor layer, and the second conductive type semiconductor layer 25 can be with
For p-type semiconductor layer.P-type semiconductor layer due to conductivity is low and current spread is difficult, thus in order to make electric current entire second
The uniform diffusion of conductive-type semiconductor layer 25 can further include the shape on the second conductive type semiconductor layer 25 and nanoparticle coating 40
The step of at transparency conducting layer 40.
Light emitting diode provided in this embodiment forms the refraction having lower than gallium nitride-based semiconductor and higher than air
The nanoparticle coating of rate, so as to reduce the total reflection of the light formed from active layer.It is possible thereby to increase light emitting diode
Exterior light release efficiency.In addition, additionally providing a kind of manufacturing method of light emitting diode, replacing deposition nano-pattern and carrying out
Patterning, but by solution process coated with nano particle, so as to cheap expense mass production.
This patent is not limited to above-mentioned preferred forms, anyone can obtain other each under the enlightenment of this patent
The LED chip and manufacturing method with nanoparticle coating of kind form, all equalizations done according to scope of the present invention patent
Variation and modification, should all belong to the covering scope of this patent.
Claims (7)
1. a kind of LED chip with nanoparticle coating characterized by comprising substrate, formed over the substrate
One conductive-type semiconductor layer, the active layer formed on a part of region of the first conductive type semiconductor layer, in the work
The second conductive type semiconductor layer that is formed on property layer, the nanoparticle coating formed on the second conductive type semiconductor layer,
With the first conductive type semiconductor layer constitute electrical connection first electrode and with the second conductive type semiconductor layer structure
At the second electrode of electrical connection；Folding of the refractive index of the nanoparticle coating between the second conductive type semiconductor layer and air
It penetrates between rate.
2. the LED chip according to claim 1 with nanoparticle coating, it is characterised in that: the nano particle applies
The material of layer includes Al2O3、Si3N4、SiO2At least one of.
3. the LED chip according to claim 1 with nanoparticle coating, it is characterised in that: described second conductive half
Conductor layer is p-type semiconductor layer, is provided with transparency conducting layer on the nanoparticle coating；The transparency conducting layer be ITO or
ZnO or metallic film.
4. the LED chip according to claim 1 with nanoparticle coating, it is characterised in that: the substrate and first
It further include having between conductive-type semiconductor layer: buffer layer formed on a substrate and the non-impurity-doped semiconductor formed on the buffer layer
Layer；The buffer layer is low-temperature gan layer or AlN layers.
5. a kind of manufacturing method of the LED chip with nanoparticle coating, which comprises the following steps:
Step S1: the first conductive type semiconductor layer is formed on the substrate；
Step S2: active layer is formed on the first conductive type semiconductor layer；
Step S3: the second conductive type semiconductor layer is formed on the active layer
Step S4: a part of region of the second conductive type semiconductor layer and active layer is etched to make the first conductive type partly lead
Expose in a part of region of body layer；
Step S5: nanoparticle coating is formed on the second conductive type semiconductor layer；
Step S6: it is formed with the first electrode of the first conductive type semiconductor layer electrical connection and with the second conductive type partly
The second electrode of conductor layer electrical connection.
6. the manufacturing method of the LED chip according to claim 5 with nanoparticle coating, which is characterized in that step
S5 specifically includes the following steps:
Step S51: by Al2O3、Si3N4、SiO2One of nano particle or it is a variety of be scattered in water or organic solvent, formed and suspended
Liquid；
Step S52: the suspension is coated on the second conductive type semiconductor layer, forms nanoparticle coating.
7. the manufacturing method of the LED chip according to claim 6 with nanoparticle coating, which is characterized in that step
S5 is further comprising the steps of:
Step S53: the nanoparticle coating is heat-treated.
Priority Applications (1)
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| CN201910454776.3A CN110148657A (en) | 2019-05-29 | 2019-05-29 | LED chip and manufacturing method with nanoparticle coating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910454776.3A CN110148657A (en) | 2019-05-29 | 2019-05-29 | LED chip and manufacturing method with nanoparticle coating |
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| CN110148657A true CN110148657A (en) | 2019-08-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112186081A (en) * | 2020-09-28 | 2021-01-05 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US20140183448A1 (en) * | 2012-12-27 | 2014-07-03 | Agency For Science, Technology And Research | Vertical light emitting diode with photonic nanostructures and method of fabrication thereof |
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| US20140183448A1 (en) * | 2012-12-27 | 2014-07-03 | Agency For Science, Technology And Research | Vertical light emitting diode with photonic nanostructures and method of fabrication thereof |
| CN105633236A (en) * | 2016-01-06 | 2016-06-01 | 厦门市三安光电科技有限公司 | Light-emitting diode and manufacturing method thereof |
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| CN112186081A (en) * | 2020-09-28 | 2021-01-05 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN112186081B (en) * | 2020-09-28 | 2021-08-03 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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