CN106784226A - A kind of III-nitride micro-nano luminescent device of inverted structure and preparation method thereof - Google Patents
A kind of III-nitride micro-nano luminescent device of inverted structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 150000004767 nitrides Chemical class 0.000 claims abstract description 80
- 230000000873 masking effect Effects 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 229910004205 SiNX Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 230000026267 regulation of growth Effects 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000001451 molecular beam epitaxy Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 8
- 239000002086 nanomaterial Substances 0.000 description 7
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000035618 desquamation Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
The invention discloses a kind of III-nitride micro-nano luminescent device of inverted structure, including luminescent device body, the luminescent device body has the first N-shaped group III nitride layer (1), Patterned masking layer (2), the second N-shaped group III nitride layer (3), III-nitride active layer (4), p-type group III nitride layer (5), light reflective conductive layer (6), p-type electrode (7) successively from top to bottom, and the first N-shaped group III nitride layer (1) is provided with n-type electrode (8)；The second N-shaped group III nitride layer (3) is hexagonal pyramid structure or hexagonal truncated pyramid structure；The figure of the Patterned masking layer (2) is periodicity polygon or circular hole, and size is 1 μm~20 μm, and array period is 50 μm~200 μm；The invention also discloses a kind of preparation method of the III-nitride micro-nano luminescent device of inverted structure, this micro-nano luminescent device has that size is controllable, crystal mass is high, stable performance, luminous efficiency high the characteristics of.
Description
Technical field
The present invention relates to the field of light emitting semiconductor device, and in particular to a kind of III-nitride micro-nano hair of inverted structure
Optical device and preparation method.
Background technology
III-nitride is due to having broad stopband, high heat conductance, electronics saturation drift velocity high and big critical breakdown potential
The features such as pressure, the focus as the research of current semiconductor technology.(forbidden band is wide for III-nitride GaN (energy gap 3.4eV), AlN
Degree 6.2eV), InN (energy gap 0.7eV) and its composition alloy energy gap cover from infrared to visible ray, ultraviolet light
Energy range, therefore had a wide range of applications in optoelectronic areas, such as large power white light LED, laser, the day of ultraviolet band
Blind detector etc..Current III-nitride LED, laser and electronic device have been realized in merchandized handling, are widely used in
The fields such as display backlight source, illumination, information Store.
Because large scale III-nitride monocrystalline material growth is very difficult, this causes that isoepitaxial growth is difficult on a large scale
Realize.Presently mainly using the method for heteroepitaxial growth in Growns such as sapphire, carborundum, silicon.By extension
The continuous innovation of technology, has grown the light of the group III nitride material and its correlation that realize better quality in foreign substrate
Electrical part, and realize the commercialization of product.However, the technology for reaching its maturity is also promoted to III-nitride photoelectric device
The further requirement of energy, specifically in laser, quantum information storage, the application aspect of single-photon source device.But due to
The reason such as lattice mismatch and thermal mismatching, the inevasible dislocation that there is higher density of the group III nitride material of hetero-epitaxy,
The quantum efficiency of photoelectric device causes dramatic decrease due to the presence of dislocation, greatly affected device performance.
The content of the invention
To solve the problems, such as that III-nitride luminescent device is because of low quantum efficiency caused by high dislocation density in the prior art
And p-type electrode shadow problem, the III-nitride micro-nano luminescent device and preparation method for proposing a kind of inverted structure of the invention,
The III-nitride of selective area growth micro-nano structure in pattern mask, reduces the dislocation density of material, improves interior
Quantum efficiency.Then by flip device after substrate desquamation, using metal p-electrode as new support substrate, such device is led
Hot property is more superior, and metal p-electrode can be as speculum, and flip device solves p-type electrode shadow problem, carries
Luminous efficiency high.Additionally, the luminescent device of micro-nano structure as display when with resolution ratio higher.
To achieve these goals, the technical scheme is that：
A kind of III-nitride micro-nano luminescent device of inverted structure, including luminescent device body, the luminescent device sheet
Body has the first N-shaped group III nitride layer (1), Patterned masking layer (2), the second N-shaped group III nitride layer successively from top to bottom
(3), III-nitride active layer (4), p-type group III nitride layer (5), light reflective conductive layer (6), p-type electrode (7), a n
Type group III nitride layer (1) is provided with n-type electrode (8).
Preferably, the second N-shaped group III nitride layer (3) is hexagonal pyramid structure or hexagonal truncated pyramid knot
Structure.
Preferably, the figure of the Patterned masking layer (2) is periodicity polygon or circular hole, and size is 1 μm~20 μm,
Array period is 50 μm~200 μm.
Preferably, the material of the Patterned masking layer (2) is SiO2、TiO2、ZrO2、HfO2、Ta2O5、SiNxIt is therein
One kind, its thickness is 100nm~1000nm.
Preferably, the second N-shaped group III nitride layer (3) be AlN, the AlGaN of GaN, InN, different component, InGaN,
The individual layer or lamination layer structure of AlInN, AlInGaN.
Preferably, light reflective conductive layer (6) is Ti, Al, Ag, Pt one kind therein, and thickness is 100nm~1000nm.
Preferably, two kinds, three kinds or four kinds conjunctions during the n-type electrode (8) is for Ti, Al, Ni, Au, Ag, Cr, Pd, Pt
Gold, wherein the thickness of every kind of alloy is 50nm~1000nm.
Preferably, the p-type electrode (7) is Cu or Zn, and its thickness is 100 μm~500 μm.
A kind of preparation method of the III-nitride micro-nano luminescent device of inverted structure, it is characterised in that：Including following step
Suddenly：
Step 1：In Grown the first N-shaped group III nitride layer (1)；
Step 2：Patterned masking layer (2) is prepared on the first N-shaped group III nitride layer (1)；
Step 3：The N-shaped group III nitride layer (3) of growth regulation two on the window of above-mentioned Patterned masking layer (2)；
Step 4：Continued growth III-nitride active layer (4) and p-type three races on the second N-shaped group III nitride layer (3)
Nitride layer (5)；
Step 5：Light reflective conductive layer (6) is plated in p-type group III nitride layer (5)；
Step 6：P-type electrode (7) is electroplated on light reflective conductive layer (6)；
Step 7：Peeling liner bottom obtains luminescent device body；
Step 8：By luminescent device body upside-down mounting, prepare n-type electrode (8) in the first N-shaped group III nitride layer (1) and fallen
The III-nitride micro-nano luminescent device of assembling structure.
Further, the material of the substrate is the one kind in Si, sapphire, SiC, GaN, AlN or ZnO；
Further, the second N-shaped group III nitride layer (3) is hexagonal pyramid structure or hexagonal truncated pyramid knot
Structure；
Further, the figure of the Patterned masking layer (2) is periodicity polygon or circular hole, and size is 1 μm~20 μ
M, array period is 50 μm~200 μm, and the figure of the Patterned masking layer (2) is formed using wet method or dry etching；
Further, the material of the Patterned masking layer (2) is SiO2、TiO2、ZrO2、HfO2、Ta2O5、SiNxWherein
One kind, its thickness is 100nm~1000nm, and its preparation method is plasma reinforced chemical vapour deposition, electron beam evaporation or
Person's magnetron sputtering.；
Further, the second N-shaped group III nitride layer (3) be AlN, the AlGaN of GaN, InN, different component,
The individual layer or lamination layer structure of InGaN, AlInN, AlInGaN, its preparation method are the chemical deposition of metal organic vapors or molecule
Beam epitaxy；
Further, light reflective conductive layer (6) is Ti, Al, Ag, Pt one kind therein, thickness be 100nm~
1000nm；
Further, two kinds, three kinds or four kinds during the n-type electrode (8) is for Ti, Al, Ni, Au, Ag, Cr, Pd, Pt
Alloy, wherein the thickness of every kind of alloy is 50nm~1000nm, its preparation method is electron beam evaporation or magnetron sputtering；
Further, the p-type electrode (7) is Cu or Zn, and its thickness is 100 μm~500 μm, and its preparation method is electricity
Plating.
Compared with prior art, the beneficial effects of the invention are as follows：(1), present invention selection region on Patterned masking layer
III-nitride (such as the first N-shaped group III nitride layer (1), the second N-shaped group III nitride layer (3), the three races of growth of micro-nano structure
Nitride active layer (4), p-type group III nitride layer (5)), the dislocation density of material is reduced, improve internal quantum efficiency；
(2) it is, of the invention by flip device after substrate desquamation, using metal p-electrode as new support substrate, the thermal conductivity of such device
Can be more superior, and metal p-electrode is also used as speculum, flip device solves p-type electrode shadow problem, improves
Luminous efficiency.Additionally, the luminescent device of micro-nano structure as display when with resolution ratio higher；(3), preparation side of the invention
Method can be by controlling cycle and the dimension of picture of Patterned masking layer, so that the second N-shaped three races of control selections region growing
The size of nitride layer, and then control the size of luminescent device.
Brief description of the drawings
Fig. 1 is the figure used by a kind of III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 1 is provided
Shape mask schematic diagram.
Fig. 2 is a kind of preparation side of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 1 is provided
Method process flow diagram.
Fig. 3 is a kind of preparation side of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 1 is provided
The electron scanning micrograph of the step of method technological process the 3rd.
Fig. 4 is a kind of preparation side of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 1 is provided
The schematic perspective view of the step of method technological process the 4th.
Fig. 5 is that a kind of solid of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 1 is provided is shown
It is intended to.
Figure used by a kind of III-nitride micro-nano luminescent device of inverted structure that Fig. 6 embodiment of the present invention 2 is provided
Mask schematic diagram.
Fig. 7 is that a kind of section of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 2 is provided shows
It is intended to.
Fig. 8 is a kind of preparation side of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 2 is provided
The electron scanning micrograph of the step of method technological process the 3rd.
Fig. 9 is a kind of preparation side of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 2 is provided
The schematic perspective view of the step of method technological process the 4th.
Figure 10 is that a kind of solid of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 2 is provided is shown
It is intended to.
Specific embodiment
Technical scheme is further illustrated with reference to specific embodiment.
As Figure 1-10 shows, a kind of III-nitride micro-nano luminescent device of inverted structure, including luminescent device body, institute
State luminescent device body has the first N-shaped group III nitride layer (1), Patterned masking layer (2), the second N-shaped three successively from top to bottom
Group iii nitride layer (3), III-nitride active layer (4), p-type group III nitride layer (5), light reflective conductive layer (6), p-type electrode
(7), the first N-shaped group III nitride layer (1) is provided with n-type electrode (8).
In concrete technical scheme of the invention, the second N-shaped group III nitride layer (3) for hexagonal pyramid structure or
Hexagonal truncated pyramid structure, the figure of the Patterned masking layer (2) is periodicity polygon or circular hole, size is 1 μm~
20 μm, array period is 50 μm~200 μm, and the material of the Patterned masking layer (2) is SiO2、TiO2、ZrO2、HfO2、
Ta2O5、SiNxOne kind therein, its thickness is 100nm~1000nm, the second N-shaped group III nitride layer (3) is AlN,
GaN, InN, the individual layer or lamination layer structure of AlGaN, InGaN, AlInN, AlInGaN of different component.
The III-nitride of selective area growth micro-nano structure on Patterned masking layer, such as the first N-shaped III-nitride
Layer (1), the second N-shaped group III nitride layer (3), III-nitride active layer (4), p-type group III nitride layer (5), reduce material
The dislocation density of material, improves internal quantum efficiency.
In concrete technical scheme of the invention, light reflective conductive layer (6) is Ti, Al, Ag, Pt one kind therein, thick
It is 100nm~1000nm to spend, the n-type electrode (8) for Ti, Al, Ni, Au, Ag, Cr, Pd, Pt in two kinds, three kinds or four
Alloy is planted, wherein the thickness of every kind of alloy is 50nm~1000nm, the p-type electrode (7) is Cu or Zn, and its thickness is 100 μ
M~500 μm.
The present invention by flip device after substrate desquamation, using metal p-electrode as new support substrate, lead by such device
Hot property is more superior, and metal p-electrode is also used as speculum, and flip device solves p-type electrode shadow problem, carries
Luminous efficiency high.Additionally, the luminescent device of micro-nano structure as display when with resolution ratio higher；
A kind of preparation method of the III-nitride micro-nano luminescent device of inverted structure, comprises the following steps：
Step 1：In Grown the first N-shaped group III nitride layer (1)；
Step 2：Patterned masking layer (2) is prepared on the first N-shaped group III nitride layer (1)；
Step 3：The N-shaped group III nitride layer (3) of growth regulation two on the window of above-mentioned Patterned masking layer (2)；
Step 4：Continued growth III-nitride active layer (4) and p-type three races on the second N-shaped group III nitride layer (3)
Nitride layer (5)；
Step 5：Light reflective conductive layer (6) is plated in p-type group III nitride layer (5)；
Step 6：P-type electrode (7) is electroplated on light reflective conductive layer (6)；
Step 7：Peeling liner bottom obtains luminescent device body；
Step 8：By luminescent device body upside-down mounting, prepare n-type electrode (8) in the first N-shaped group III nitride layer (1) and fallen
The III-nitride micro-nano luminescent device of assembling structure.
Further, the material of the substrate is the one kind in Si, sapphire, SiC, GaN, AlN or ZnO；
Further, the second N-shaped group III nitride layer (3) is hexagonal pyramid structure or hexagonal truncated pyramid knot
Structure；
Further, the figure of the Patterned masking layer (2) is periodicity polygon or circular hole, and size is 1 μm~20 μ
M, array period is 50 μm~200 μm, and the figure of the Patterned masking layer (2) is formed using wet method or dry etching；
Further, the material of the Patterned masking layer (2) is SiO2、TiO2、ZrO2、HfO2、Ta2O5、SiNxWherein
One kind, its thickness is 100nm~1000nm, and its preparation method is plasma reinforced chemical vapour deposition, electron beam evaporation or
Person's magnetron sputtering.；
Further, the second N-shaped group III nitride layer (3) be AlN, the AlGaN of GaN, InN, different component,
The individual layer or lamination layer structure of InGaN, AlInN, AlInGaN, its preparation method are the chemical deposition of metal organic vapors or molecule
Beam epitaxy；
Further, light reflective conductive layer (6) is Ti, Al, Ag, Pt one kind therein, thickness be 100nm~
1000nm；
Further, two kinds, three kinds or four kinds during the n-type electrode (8) is for Ti, Al, Ni, Au, Ag, Cr, Pd, Pt
Alloy, wherein the thickness of every kind of alloy is 50nm~1000nm, its preparation method is electron beam evaporation or magnetron sputtering；
Further, the p-type electrode (7) is Cu or Zn, and its thickness is 100 μm~500 μm, and its preparation method is electricity
Plating.
Preparation method of the invention can be by controlling cycle and the dimension of picture of Patterned masking layer, so that control selections
The size of the second N-shaped group III nitride layer of region growing, and then control the size of luminescent device.
Embodiment 1
As shown in the steps of Fig. 2 the 8th, a kind of III-nitride micro-nano luminescent device of inverted structure, including luminescent device sheet
Body, the luminescent device body has the first N-shaped group III nitride layer (1), Patterned masking layer (2), the 2nd n successively from top to bottom
Type group III nitride layer (3), III-nitride active layer (4), p-type group III nitride layer (5), light reflective conductive layer (6), p-type electricity
Pole (7), the first N-shaped group III nitride layer (1) is provided with n-type electrode (8).
In concrete technical scheme of the invention, substrate (9) is Si substrates, and the first N-shaped group III nitride layer (1) is to mix Si
AlGaN, the second N-shaped group III nitride layer (3) is hexagonal pyramid structure, and Patterned masking layer (2) material is
SiO2, thickness is 200nm, and the figure of Patterned masking layer (2) is periodicity circular hole, and size is 2 μm, and array period is 100 μm；
Second N-shaped group III nitride layer (3) is the GaN for mixing Si, its electron scanning micrograph as shown in figure 3, appearance is hexagonal gold
Word tower structure；III-nitride active layer (4) is InGN, and p-type group III nitride layer (5) is the AlGaN for mixing Mg, its stereochemical structure
Schematic diagram is as shown in Figure 4；.
The III-nitride of selective area growth micro-nano structure on Patterned masking layer, such as the first N-shaped III-nitride
Layer (1), the second N-shaped group III nitride layer (3), III-nitride active layer (4), p-type group III nitride layer (5), reduce material
The dislocation density of material, improves internal quantum efficiency.
In concrete technical scheme of the invention, light reflective conductive layer (6) is Ag, and thickness is 100nm；The p-type electricity
Pole (7) is Cu, and its thickness is 100 μm；Wherein, n-type electrode (8) is Ti (20nm)/Al (30nm)/Ni (50nm)/Au
(200nm)。
Its specific preparation process is：
Step 1：The N-shaped group III nitride layer (1) of growth regulation one on substrate (9), wherein, substrate (9) is Si substrates, first
N-shaped group III nitride layer (1) is the AlGaN for mixing Si；
Step 2：Patterned masking layer 2 is prepared on the first N-shaped group III nitride layer 1, wherein, Patterned masking layer (2)
Material is SiO2, thickness is 200nm；
Step 3：The N-shaped group III nitride layer (3) of growth regulation two on the window of above-mentioned Patterned masking layer (2), wherein, the
Two N-shaped group III nitride layers (3) are the GaN for mixing Si, its electron scanning micrograph as shown in figure 3, appearance is hexagonal gold word
Tower structure；
Step 4：Continued growth III-nitride active layer (9) and p-type three races on the second N-shaped group III nitride layer (3)
Nitride layer (5), wherein, III-nitride active layer (4) is InGN, and p-type group III nitride layer (5) is the AlGaN for mixing Mg, its
Dimensional structure diagram is as shown in Figure 4；
Step 5：Light reflective conductive layer (6) is plated in p-type group III nitride layer (5), wherein, light reflective conductive layer (6) is Ag, thick
It is 100nm to spend；
Step 6：P-type electrode (7) is electroplated on light reflective conductive layer (6), wherein, p-type electrode (7) is Cu, and thickness is 100 μ
m；
Step 7：Peeling liner bottom (9)；
Step 8：By sample upside-down mounting, n-type electrode (8) is prepared in the first N-shaped group III nitride layer 1, wherein, n-type electrode (8)
It is Ti (20nm)/Al (30nm)/Ni (50nm)/Au (200nm).
Finally, a kind of solid of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 1 is provided is shown
It is intended to as shown in Figure 5.
Embodiment 2
The present embodiment uses the preparation flow basically identical with embodiment 1, and difference is：Graphically covering in embodiment 1
Film (2) replaces with hexagonal array, and internal diameter is 3 μm, and the cycle is 150 μm, and mask material is TiO2, as shown in Figure 6.
Finally, a kind of section of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 2 is provided shows
It is intended to as shown in Figure 7.
Fig. 8 is III-nitride micro-nano luminescent device and the preparation side of a kind of inverted structure that the embodiment of the present invention 2 is provided
The electron scanning micrograph of the step of method technological process the 3rd, it is seen that its appearance is hexagonal truncated pyramid structure.
Fig. 9 is III-nitride micro-nano luminescent device and the preparation side of a kind of inverted structure that the embodiment of the present invention 2 is provided
The schematic perspective view of the step of method technological process the 4th.
Figure 10 is that a kind of solid of the III-nitride micro-nano luminescent device of inverted structure that the embodiment of the present invention 2 is provided is shown
It is intended to.
For a person skilled in the art, technical scheme that can be as described above and design, make other each
Plant corresponding change and deform, and all these changes and deforms the protection model that should all belong to the claims in the present invention
Within enclosing.
Claims (10)
1. the III-nitride micro-nano luminescent device of a kind of inverted structure, it is characterised in that：Including luminescent device body, the hair
Optical device body has the first N-shaped group III nitride layer (1), Patterned masking layer (2), the second N-shaped three races nitrogen successively from top to bottom
Compound layer (3), III-nitride active layer (4), p-type group III nitride layer (5), light reflective conductive layer (6), p-type electrode (7), institute
State the first N-shaped group III nitride layer (1) and be provided with n-type electrode (8).
2. the III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 1, it is characterised in that：It is described
Second N-shaped group III nitride layer (3) is hexagonal pyramid structure or hexagonal truncated pyramid structure.
3. the III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 1, it is characterised in that：It is described
The figure of Patterned masking layer (2) is periodicity polygon or circular hole, and size is 1 μm~20 μm, and array period is 50 μm~200
μm。
4. III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 1 and preparation method thereof, its
It is characterised by：The material of the Patterned masking layer (2) is SiO2、TiO2、ZrO2、HfO2、Ta2O5、SiNxOne kind therein, its
Thickness is 100nm~1000nm.
5. the III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 1, it is characterised in that：It is described
Second N-shaped group III nitride layer (3) is AlN, the individual layer of AlGaN, InGaN, AlInN, AlInGaN of GaN, InN, different component
Or lamination layer structure.
6. the III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 1, it is characterised in that：It is described
Light reflective conductive layer (6) is Ti, Al, Ag, Pt one kind therein, and thickness is 100nm~1000nm.
7. the III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 1, it is characterised in that：It is described
N-type electrode (8) for Ti, Al, Ni, Au, Ag, Cr, Pd, Pt in two kinds, three kinds or four kinds alloys, wherein the thickness of every kind of alloy
It is 50nm~1000nm to spend.
8. the III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 1, it is characterised in that：It is described
P-type electrode (7) is Cu or Zn, and its thickness is 100 μm~500 μm.
9. the preparation side of the III-nitride micro-nano luminescent device according to a kind of any described inverted structures of claim 1-8
Method, it is characterised in that：Comprise the following steps：
Step 1：In Grown the first N-shaped group III nitride layer (1)；
Step 2：Patterned masking layer (2) is prepared on the first N-shaped group III nitride layer (1)；
Step 3：The N-shaped group III nitride layer (3) of growth regulation two on the window of above-mentioned Patterned masking layer (2)；
Step 4：Continued growth III-nitride active layer (4) and p-type Group III nitride on the second N-shaped group III nitride layer (3)
Nitride layer (5)；
Step 5：Light reflective conductive layer (6) is plated in p-type group III nitride layer (5)；
Step 6：P-type electrode (7) is electroplated on light reflective conductive layer (6)；
Step 7：Peeling liner bottom obtains luminescent device body；
Step 8：By luminescent device body upside-down mounting, prepare n-type electrode (8) in the first N-shaped group III nitride layer (1) and obtain upside-down mounting knot
The III-nitride micro-nano luminescent device of structure.
10. the preparation method of the III-nitride micro-nano luminescent device of a kind of inverted structure according to claim 9, it is special
Levy and be, the material of the substrate is the one kind in Si, sapphire, SiC, GaN, AlN or ZnO；
The second N-shaped group III nitride layer (3) is hexagonal pyramid structure or hexagonal truncated pyramid structure；
The figure of the Patterned masking layer (2) is periodicity polygon or circular hole, and size is 1 μm~20 μm, and array period is
50 μm~200 μm, the figure of the Patterned masking layer (2) is formed using wet method or dry etching；
The material of the Patterned masking layer (2) is SiO2、TiO2、ZrO2、HfO2、Ta2O5、SiNxOne kind therein, its thickness is
100nm~1000nm, its preparation method is plasma reinforced chemical vapour deposition, electron beam evaporation or magnetron sputtering.；
The second N-shaped group III nitride layer (3) is AlN, the AlGaN of GaN, InN, different component, InGaN, AlInN,
The individual layer or lamination layer structure of AlInGaN, its preparation method are the chemical deposition of metal organic vapors or molecular beam epitaxy；
Light reflective conductive layer (6) is Ti, Al, Ag, Pt one kind therein, and thickness is 100nm~1000nm；
The n-type electrode (8) for Ti, Al, Ni, Au, Ag, Cr, Pd, Pt in two kinds, three kinds or four kinds alloys, wherein every kind of
The thickness of alloy is 50nm~1000nm, and its preparation method is electron beam evaporation or magnetron sputtering；
The p-type electrode (7) is Cu or Zn, and its thickness is 100 μm~500 μm, and its preparation method is plating.
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