CN110148634A - 防止湿气进入的光感测器电极堆迭结构 - Google Patents
防止湿气进入的光感测器电极堆迭结构 Download PDFInfo
- Publication number
- CN110148634A CN110148634A CN201810366023.2A CN201810366023A CN110148634A CN 110148634 A CN110148634 A CN 110148634A CN 201810366023 A CN201810366023 A CN 201810366023A CN 110148634 A CN110148634 A CN 110148634A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- optical sensors
- entering
- stacking structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 230000000717 retained effect Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical group [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 136
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
本发明提供一种防止湿气进入的光感测器电极堆迭结构，包括：一半导体层；一内部电极层，设置于该半导体层上；一介电层，涂布于该半导体层侧壁上；一金属夹层，结合并导通设置于该内部电极层上，该金属夹层的下侧延伸并覆盖于该介电层上以构成气密；以及一抗反射层，涂布于该半导体层、该金属夹层、及该介电层的外侧，并于该金属夹层的上侧将该抗反射层保留或清出沟槽以镀上外部电极层。
Description
技术领域
本发明系有关于一种光感测器的电极堆迭结构，尤指一种用于光感测器上并可有效阻挡湿气的电极堆迭结构。
背景技术
光感测器(photodiode)是一种能够将光转换成电流或者电压讯号的光探测器。光感测器的结构通常是一个PN接面或者PIN结构，透过将光束冲击到二极体上，激发该二极体并于该二极体上产生自由电子(同时产生带正电的电洞)，这样的机制也被称作是内光电效应。如果光束的吸收发生在空乏层，则该区域的内电场将会消除其间的屏障，使得电洞能够向着阳极的方向运动，电子向着阴极的方向运动，藉此完成光电的转换。
对于光感测器传统的设计，如图1所示，常见的制作方式为，在半导体层N1侧壁涂布上一介电层N2作为绝缘及钝化使用，再涂布上一层抗反射层N4以减少光的损失，最后再移除电极N3附近的抗反射层，镀上金属层N5作为导通。然而介电层N2与抗反射层N4的粘着性并不高，若是用于非平整的表面，涂布上容易使得厚度不均匀，如此更加影响抗反射层N4与其之粘着性，特别是在电极导通区域的周围，其高度通常是元件(光感测器)最高的位置，因此介电层N2厚度在电极导通区域的位置是最薄的，若元件置于高温高湿的环境中，湿气很容易从这个弱点进入，造成光感测器的损坏。
发明内容
本发明的目的在于提供一种防止湿气进入的光感测器电极堆迭结构，其结构简单，能改善光感测器靠近电极附近的结构，以达到气密效果避免湿气经由介电层的间隙进入造成元件的损坏。
为达到上述目的，本发明公开了一种防止湿气进入的光感测器电极堆迭结构，其特征在于包括：
一半导体层；
一内部电极层，设置于该半导体层上；
一介电层，涂布于该半导体层的侧壁；
一金属夹层，结合并导通设置于该内部电极层上，该金属夹层的下侧延伸并覆盖于该介电层上以构成气密；以及
一抗反射层，涂布于该半导体层、该金属夹层、及该介电层的外侧，并于该金属夹层的上侧将该抗反射层保留或清出沟槽以镀上外部电极层。
其中，该金属夹层以蒸镀方式结合于该介电层及该内部电极层上。
其中，该金属夹层包括金属基层以及结合于该金属基层上下两侧的金属薄层以更好的与该半导体层、该介电层进行接合。
其中，该金属基层的材质为为金。
其中，该金属基层上下两侧的该金属薄层材质为钛、铬或镍。
其中，该介电层的材质为苯并环丁烯或聚酰亚胺。
其中，该抗反射层的材质为氮硅化合物、二氧化硅或氧化铝。
是以，本发明系比起习知技术具有以下优势功效：
1.本发明的堆迭结构可以有效的阻隔湿气，避免湿气经由介电层的间隙进入造成元件损毁。
2.本发明的金属夹层可以维持或增加电极的面积，将该电极维持于适当的阻抗值。
3.本发明的金属夹层可以覆盖于可能形成于介电层及内部电极层之间的间隙处，当黄光微影制程中形成的介电层有偏移的情况时仍可以透过金属夹层构成气密，藉此改善光罩对准的难易度。
附图说明
图1，为习知光感测器电极的剖面示意图。
图2，为本发明第一实施态样的外观示意图。
图3，为本发明第一实施态样的局部剖面示意图。
图4，为本发明第一实施态样的局部剖面放大示意图。
图5，为本发明第二实施态样的局部剖面示意图。
图6，为本发明第二实施态样的局部剖面放大示意图。
具体实施方式
有关本发明之详细说明及技术内容，现就配合图式说明如下。本发明中的图式只是实施态样范例及其比例未必按照实际比例绘制，该等图式态样及比例并非用以限制本案的专利范围，在此先行叙明。
请先参阅图2，本发明第一实施态样的外观示意图，如图所示：
于图2中系揭示光感测器100的外观示意图，本发明的防止湿气进入的光感测器电极堆迭结构10系位于该光感测器100最顶侧的位置，于该光感测器100顶侧的电极中间系具有收光区R用以接收光束并经由该光束激发半导体层以产生光电效应，藉此将光讯号转换为电讯号。
有关于电极堆迭结构的细节，以下请一并参阅图3，及图4，为本发明第一实施态样的局部剖面示意图及局部剖面放大示意图，如图所示：
本实施态样中，该光感测器100的电极堆迭结构10主要包括半导体层11、内部电极层12、介电层13、金属夹层14、抗反射层15、以及外部电极层16。
该半导体层11系设置于该电极堆迭结构中相对底侧的位置。于本实施态样中，该半导体层11作为收光的介面一般为P型半导体，于该P型半导体的底侧系与N型半导体之间的接面形成空乏区。于另一较佳实施态样中，该P型半导体及该N型半导体之间会再设置本征半导体层(Intrinsic)，用以避免寄生电容的产生，藉此增加元件的响应速度。
该内部电极层12系设置于该半导体层11上，作为P型半导体的电极垫区。为了保护半导体层11，于制程中，于该半导体层11的侧壁上系涂布该介电层13，并透过黄光微影制程进行图形转移，用以绝缘及钝化，以隔绝半导体层与外侧接触。于一较佳实施态样中，该介电层13的材质为苯并环丁烯(Benzocyclobutene,BCB)、或聚酰亚胺(Polyimide,PI)。
于本实施态样中，顶侧的内部电极层12相当靠近外围的位置，制程中涂布该介电层13时，一般为了确保半导体层11被完全的覆盖，介电层13将覆盖至该内部电极层12的部分表面。由于内部电极层12附近的介电层13已经相当靠近于光感测器100顶侧的位置，此处的介电层13厚度相当薄。为阻挡湿气由该介电层13的薄处进入，本发明系于该内部电极层12上额外设置一金属夹层14结合并导通设置于该内部电极层12上，而该金属夹层14的下侧系延伸并覆盖于该介电层13上以构成气密。于其中一较佳实施态样中，该金属夹层14系以蒸镀方式结合于该介电层13及该内部电极层12上。
该抗反射层15涂布于该半导体层11、该金属夹层14、及该介电层13的外侧，并于该金属夹层14的上侧将该抗反射层15保留或清出沟槽以镀上外部电极层16。于一较佳实施态样中，该抗反射层15的材质为氮硅化合物(SiNx)、二氧化硅(SiO2)、或氧化铝(Al2O3)。
为了提升气密性，该金属夹层14包括金属基层141、以及结合于该金属基层141上下两侧并与该抗反射层15、该介电层13具有较佳接合性(即更易于进行结合)的金属薄层142。由于金属薄层142与该抗反射层15、该介电层13具有较佳的接合性，抗反射层15及介电层13将紧密的粘着于金属薄层142上，使湿气不容易进入。其中，该金属夹层14可选用导电性较佳的金(Au)或其他类此的材料，于本发明中不予以限制；结合于该金属基层141上的金属薄层142系为钛(Ti)、铬(Cr)、镍(Ni)或其他类此与树脂或半导体材料间具有较佳接合性的材料，于本发明中不予以限制。
以下系针对本发明的另一较佳实施态样进行说明，请一并参阅图5、及图6，为本发明第二实施态样的局部剖面示意图及局部剖面放大示意图，如图所示：
本实施态样中光感测器的电极堆迭结构20主要包括半导体层21、内部电极层22、介电层23、金属夹层24、抗反射层25、以及外部电极层26。
该半导体层21设置于该电极堆迭结构20中相对底侧的位置。于本实施态样中，该半导体层21作为收光的介面一般为P型半导体，于该P型半导体的底侧系与N型半导体之间的接面形成空乏区。于另一较佳实施态样中，该P型半导体及该N型半导体之间会再设置本征半导体层(Intrinsic)，用以避免寄生电容的产生，藉此增加元件的响应速度。
该内部电极层22设置于该半导体层21上，作为P型半导体的电极垫区。为了保护半导体层21，于制程中，于该半导体层21的侧壁上系涂布该介电层23，用以绝缘及钝化，以隔绝半导体层21与外侧接触。于一较佳实施态样中，该介电层23系为苯并环丁烯(Benzocyclobutene,BCB)、或聚酰亚胺(Polyimide,PI)。
于本实施态样中，顶侧的内部电极层22相较于前一实施态样，较为靠近中间的位置，制程中涂布该介电层23时，可以将介电层23与该内部电极层22之间保留一余隙。将金属夹层24结合并导通设置于该内部电极层22上，该金属夹层24的下侧系延伸并覆盖于该介电层23及该介电层23与该内部电极层22之间的余隙上，藉以构成气密。于其中一较佳实施态样中，该金属夹层24系以蒸镀方式结合于该介电层23及该内部电极层22上。
该抗反射层25涂布于该半导体层21、该金属夹层24、及该介电层23的外侧，并于该金属夹层24的上侧将该抗反射层25保留或清出沟槽以镀上外部电极层26。于一较佳实施态样中，该抗反射层25系为氮硅化合物(SiNx)、二氧化硅(SiO2)、或氧化铝(Al2O3)。
为了提升气密性，该金属夹层24包括金属基层241、以及结合于该金属基层241上下两侧并与该抗反射层25、该介电层23具有较佳接合性的金属薄层242。由于金属薄层242与该抗反射层25、该介电层23具有较佳的接合性，抗反射层25及介电层23将紧密的粘着于金属薄层242上，使湿气不容易进入。其中，该金属夹层24可选用导电性较佳的金(Au)或其他类此的材料，于本发明中不予以限制；结合于该金属基层241上的金属薄层242系为钛(Ti)、铬(Cr)、镍(Ni)或其他类此与树脂或半导体材料间具有较佳接合性的材料，于本发明中不予以限制。
综上所述，本发明的堆迭结构可以有效的阻隔湿气，避免湿气经由介电层的间隙进入造成元件损毁。此外，本发明的金属夹层可以维持或增加电极的面积，将该电极维持于适当的阻抗值。再者，本发明的金属夹层可以覆盖于可能形成于介电层及内部电极层之间的间隙处，当黄光微影制程中形成的介电层有偏移的情况时仍可以透过金属夹层构成气密，藉此改善黄光微影制程时对准的难易度。
以上已将本发明做一详细说明，惟以上所述，仅为本发明之一较佳实施例而已，当不能以此限定本发明实施之范围，即凡依本发明申请专利范围所作之均等变化与修饰，皆应仍属本发明之专利涵盖范围内。
Claims (7)
1.一种防止湿气进入的光感测器电极堆迭结构，其特征在于包括：
一半导体层；
一内部电极层，设置于该半导体层上；
一介电层，涂布于该半导体层的侧壁；
一金属夹层，结合并导通设置于该内部电极层上，该金属夹层的下侧延伸并覆盖于该介电层上以构成气密；以及
一抗反射层，涂布于该半导体层、该金属夹层、及该介电层的外侧，并于该金属夹层的上侧将该抗反射层保留或清出沟槽以镀上外部电极层。
2.如权利要求1所述的防止湿气进入的光感测器电极堆迭结构，其特征在于，该金属夹层以蒸镀方式结合于该介电层及该内部电极层上。
3.如权利要求1所述的防止湿气进入的光感测器电极堆迭结构，其特征在于，该金属夹层包括金属基层以及结合于该金属基层上下两侧的金属薄层以更好的与该半导体层、该介电层进行接合。
4.如权利要求3所述的防止湿气进入的光感测器电极堆迭结构，其特征在于，该金属基层的材质为为金。
5.如权利要求3或4所述的防止湿气进入的光感测器电极堆迭结构，其特征在于，该金属基层上下两侧的该金属薄层材质为钛、铬或镍。
6.如权利要求1所述的防止湿气进入的光感测器电极堆迭结构，其特征在于，该介电层的材质为苯并环丁烯或聚酰亚胺。
7.如权利要求1所述的防止湿气进入的光感测器电极堆迭结构，其特征在于，该抗反射层的材质为氮硅化合物、二氧化硅或氧化铝。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107201632 | 2018-02-02 | ||
| TW107201632 | 2018-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110148634A true CN110148634A (zh) | 2019-08-20 |
Family
ID=66333789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810366023.2A Pending CN110148634A (zh) | 2018-02-02 | 2018-04-23 | 防止湿气进入的光感测器电极堆迭结构 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10283652B1 (zh) |
| CN (1) | CN110148634A (zh) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223266A (ja) * | 1999-02-02 | 2000-08-11 | Kawaguchiko Seimitsu Co Ltd | エレクトロルミネッセンス |
| US20070278649A1 (en) * | 2006-06-02 | 2007-12-06 | Nissan Motor Co., Ltd. | Semiconductor package, method of producing the same and semiconductor package assembly |
| US20100020469A1 (en) * | 2006-09-27 | 2010-01-28 | Kyocera Corporation | Capacitor, Capacitor Device, Electronic Component, Filter Device, Communication Apparatus, and Method of Manufacturing Capacitor Device |
| CN104637827A (zh) * | 2013-11-07 | 2015-05-20 | 精材科技股份有限公司 | 半导体结构及其制造方法 |
| CN104952904A (zh) * | 2014-03-27 | 2015-09-30 | 环球展览公司 | 有机发光装置及其制备方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015046539A (ja) * | 2013-08-29 | 2015-03-12 | ソニー株式会社 | 撮像素子、撮像装置、並びに、製造装置および方法 |
| TWI646641B (zh) * | 2016-08-24 | 2019-01-01 | 同欣電子工業股份有限公司 | Waterproof package module and waterproof packaging process |
-
2018
- 2018-04-23 CN CN201810366023.2A patent/CN110148634A/zh active Pending
- 2018-06-19 US US16/012,252 patent/US10283652B1/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000223266A (ja) * | 1999-02-02 | 2000-08-11 | Kawaguchiko Seimitsu Co Ltd | エレクトロルミネッセンス |
| US20070278649A1 (en) * | 2006-06-02 | 2007-12-06 | Nissan Motor Co., Ltd. | Semiconductor package, method of producing the same and semiconductor package assembly |
| US20100020469A1 (en) * | 2006-09-27 | 2010-01-28 | Kyocera Corporation | Capacitor, Capacitor Device, Electronic Component, Filter Device, Communication Apparatus, and Method of Manufacturing Capacitor Device |
| CN104637827A (zh) * | 2013-11-07 | 2015-05-20 | 精材科技股份有限公司 | 半导体结构及其制造方法 |
| CN104952904A (zh) * | 2014-03-27 | 2015-09-30 | 环球展览公司 | 有机发光装置及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10283652B1 (en) | 2019-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20110042650A1 (en) | Single and few-layer graphene based photodetecting devices | |
| US20110284064A1 (en) | Solar cell | |
| TW201212261A (en) | Optoelectronic semiconductor chip and method of producing optoelectronic semiconducotr chips | |
| CN108321291A (zh) | 具有二维电子气沟道势垒层局部凹槽结构的霍尔传感器及其制作方法 | |
| CN104956501A (zh) | 用ald层封装的光电子半导体芯片和相应的制造方法 | |
| CN105118762A (zh) | 倒装阳极的纳米真空三极管结构及制备方法 | |
| JP5636604B2 (ja) | 半導体受光素子 | |
| US20120042941A1 (en) | Back-Side Contact Solar Cell | |
| US20160172545A1 (en) | Optoelectronic Semiconductor Chip | |
| TWI502725B (zh) | Photodetector | |
| CN110148634A (zh) | 防止湿气进入的光感测器电极堆迭结构 | |
| US20220115571A1 (en) | Vertical light-emitting diode structure with metal layer capable of testing and protecting sidewalls | |
| CN116469943A (zh) | 光敏元件及光电部件 | |
| TWI645517B (zh) | Photosensor electrode stack structure for preventing moisture from entering | |
| CN208045550U (zh) | 霍尔元件和霍尔传感器 | |
| US9401465B2 (en) | Light emitting diode having mirror protection layer and method for manufacturing mirror protection layer | |
| US20140124905A1 (en) | Vibration noise shield in a semiconductor sensor | |
| CN111863776B (zh) | 一种低噪声双面集成可注入生物光电极微探针及制备方法 | |
| JP2007184410A (ja) | 半導体受光素子およびその製造方法 | |
| JP2022149786A (ja) | テスト可能で側壁を保護する金属層を備える垂直型発光ダイオード構造 | |
| JP2017228628A (ja) | 赤外線デバイス | |
| CN111129287A (zh) | 一种GaN基磁感应器及制备方法 | |
| CN205752223U (zh) | 一种led倒装芯片 | |
| TWI855344B (zh) | Iii-v族半導體晶粒 | |
| CN110767650B (zh) | 一种提高抗击穿能力的smim电容结构及制作方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20231208 |