CN110137130A - 一种干法刻蚀系统用尺寸转换托盘 - Google Patents

一种干法刻蚀系统用尺寸转换托盘 Download PDF

Info

Publication number
CN110137130A
CN110137130A CN201910404457.1A CN201910404457A CN110137130A CN 110137130 A CN110137130 A CN 110137130A CN 201910404457 A CN201910404457 A CN 201910404457A CN 110137130 A CN110137130 A CN 110137130A
Authority
CN
China
Prior art keywords
small
cooling air
electrode
wafer
size conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910404457.1A
Other languages
English (en)
Other versions
CN110137130B (zh
Inventor
韩大健
李娜
车东晨
许开东
蒋中原
谷志强
王珏斌
冯英雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Leuven Instruments Co Ltd
Original Assignee
Jiangsu Leuven Instruments Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Leuven Instruments Co Ltd filed Critical Jiangsu Leuven Instruments Co Ltd
Priority to CN201910404457.1A priority Critical patent/CN110137130B/zh
Publication of CN110137130A publication Critical patent/CN110137130A/zh
Application granted granted Critical
Publication of CN110137130B publication Critical patent/CN110137130B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明公开了一种干法刻蚀系统用尺寸转换托盘，包括与电极可拆卸连接的小尺寸转换托盘；电极包括电极上盖和电极底座；电极上盖设有冷却气孔，电极上盖上表面同轴设有大晶圆放置槽和大压片，其内设有冷却气大尺寸均布槽；小尺寸转换托盘的底面设置有冷却气密封槽，冷却气密封槽密封包覆在大晶圆压紧装置的外周；小尺寸转换托盘的中心设置有冷却气贯通孔；小尺寸转换托盘的上表面同轴设置有小晶圆放置槽和小压片，小晶圆放置槽内设有若干个均与冷却气贯通孔相连通的冷却气小尺寸均布槽。本发明在不需更换基座的同时，使小晶圆能够进行均匀地干法刻蚀。另外，还给小晶圆提供均匀的冷却，且小尺寸转换托盘结构简单，更换方便。

Description

一种干法刻蚀系统用尺寸转换托盘
技术领域
本发明涉及一种半导体器件及芯片等制造领域，特别是一种干法刻蚀系统用尺寸转换托盘。
背景技术
随着半导体集成电路、集成光路和其它光电子器件向微形化和高密度化方向发展, 对刻蚀的工艺要求亦越来越高。传统的湿法刻蚀由于其刻蚀的各向同性产生严重的钻蚀, 使得图形刻蚀后的边缘比较粗糙, 要刻蚀3μm以下线宽的图形十分困难，干法刻蚀技术应运而生。
干法刻蚀技术是近年来日渐成熟的方法，由于其良好的各向异刻蚀特性和可灵活控制的工艺因素, 是一种将抗蚀剂图形精确转移到基体上的有效方法, 目前已被国内外同行广泛采用, 普遍认为它是今后微细图形刻蚀的主要发展方向。
在干法刻蚀中，针对小尺寸样品，还存在着如下问题：
1、基座通常为6寸、8寸或者12寸，但是刻蚀的样品可能为2寸、3寸、4寸，小尺寸的样品直接放置在大尺寸的基座上，会跑动，造成均匀性不佳。
2、小尺寸样品由于在基座上容易跑到，也即与基座的接触不好，故散热性能不好，因而会出现样品糊胶情况。
所以，这种小尺寸样品如何进行干法刻蚀，成为迫切解决的问题。
目前，在业界有两种常用的解决办法，具体如下：
第一种：更换基座。这种方法的成本较高，而且需要采用大量的时间与人力，更换完毕后也可能造成电场的变化，之前的工艺有可能完全不能用。
第二种：将这种小尺寸的样品用导热硅油附着在基座上。这样会造成样品的污染，导热硅油如果放少了，导热效果不好，导热硅油放多了，会污染工艺腔室。而且在取样品的过程中，若被导热硅油黏住后，样品很容易碎掉。
发明内容
本发明要解决的技术问题是针对上述现有技术的不足，而提供一种干法刻蚀系统用尺寸转换托盘，该干法刻蚀系统用尺寸转换托盘在不需更换基座的同时，使小晶圆能够进行均匀地干法刻蚀。另外，还给小晶圆提供均匀的冷却，且小尺寸转换托盘结构简单，更换方便，成本较低，极大程度的减小了更换电极的复杂性，操作方便。
为解决上述技术问题，本发明采用的技术方案是：
一种干法刻蚀系统用尺寸转换托盘，包括与电极可拆卸连接的小尺寸转换托盘。
电极位于干法刻蚀系统的反应腔内，电极包括密封可拆卸连接的电极上盖和电极底座。
电极上盖的中心设置有冷却气孔，电极上盖的上表面同轴设置有大晶圆放置槽，大晶圆放置槽用于大晶圆的放置，大晶圆放置槽内设置有若干个均与冷却气孔相连通的冷却气大尺寸均布槽。
位于大晶圆放置槽外周的电极上盖上设置有大晶圆压紧装置。
电极上盖的下表面设置有冷水槽。
电极底座上设置有冷水进口、冷水出口和冷却气进口；其中，冷水进口和冷水出口均与冷水槽相连通，冷却气进口通过冷却气传送管与冷却气孔相连通；冷却气从冷却气进口通入；
小尺寸转换托盘与电极上盖尺寸形状相同，小尺寸转换托盘的底面设置有冷却气密封槽，冷却气密封槽密封包覆在大晶圆压紧装置的外周。
小尺寸转换托盘的中心设置有冷却气贯通孔；小尺寸转换托盘的上表面同轴设置有小晶圆放置槽，小晶圆放置槽用于小晶圆的放置，小晶圆放置槽内设置有若干个均与冷却气贯通孔相连通的冷却气小尺寸均布槽。
位于小晶圆放置槽外周的小尺寸转换托盘上设置有小晶圆压紧装置。
冷却气为惰性气体。
冷却气为氦气。
大晶圆压紧装置和小晶圆压紧装置均为沿周向均布的压片。
每个压片的外侧端均与对应的小尺寸转换托盘或电极上盖可拆卸连接。
冷水槽呈S形或蛇形。
反应腔与抽真空装置相连接，反应腔包括可拆卸连接的腔盖，腔盖上设置有若干个反应气体进气孔，腔盖底部设置有与上射频相连接的上耦合线圈，电极与下射频相连接。
本发明具有如下有益效果：
1、当需要进行小晶圆刻蚀时，只需将小尺寸转换托盘安装在电极上盖上即可，不需更换基座，就能使小晶圆进行均匀地干法刻蚀。
2、当进行大晶圆刻蚀时，冷水槽将对电极进行冷却，大晶圆放置槽中设置的通有冷却气的冷却气大尺寸均布槽将对放置在其内的大晶圆底面进行均匀冷却，防止大晶圆的糊胶情况发生。
4、当进行小晶圆刻蚀时，冷水槽继续对电极进行冷却，大晶圆放置槽中设置的通有冷却气的冷却气大尺寸均布槽将对小尺寸转换托盘背部进行冷却；小晶圆放置槽中设置的通有冷却气的冷却气小尺寸均布槽将对放置在其内的小晶圆底面进行均匀冷却，防止小晶圆的糊胶情况发生。
5、大晶圆压紧装置和小晶圆压紧装置能分别对大晶圆和小晶圆进行压紧定位，防止位置发生变化。
6、小尺寸转换托盘结构简单，更换方便，成本较低，极大程度的减小了更换电极的复杂性，操作方便。
附图说明
图1显示了干法刻蚀系统的布置图。
图2显示了电极的拆卸结构图（显示顶面，不含大压片）。
图3显示了电极的拆卸结构图（显示底面）。
图4显示了大晶圆的安装示意图。
图5显示了小尺寸转换托盘的顶面（不含小压片）结构示意图。
图6显示了小尺寸转换托盘的底面结构示意图。
图7显示了小尺寸转换托盘上小晶圆的安装示意图。
其中有：
10.反应腔；11.腔盖；
20.抽真空装置；
30.电极；
31.电极上盖；311.冷却气孔；312.冷水槽；313.大晶圆放置槽；314.冷却气大尺寸均布槽；315.大压片；
32.电极底座；
321.冷水进口；322.冷水出口；323.冷却气进口；324.冷水密封槽；325.冷却气传送管；326.螺栓；
40.晶圆；41.大晶圆；42.小晶圆；
50.小尺寸转换托盘；
51.冷却气贯通孔；52.冷却气密封槽；53.小晶圆放置槽；54.小尺寸冷却气均布槽；55.小压片；56.托盘固定孔。
具体实施方式
下面结合附图和具体较佳实施方式对本发明作进一步详细的说明。
本发明的描述中，需要理解的是，术语“左侧”、“右侧”、“上部”、“下部”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，“第一”、“第二”等并不表示零部件的重要程度，因此不能理解为对本发明的限制。本实施例中采用的具体尺寸只是为了举例说明技术方案，并不限制本发明的保护范围。
如图1所示，干法刻蚀系统，优选等离子刻蚀系统，包括反应腔10、抽真空装置20、电极30和晶圆40。
电极位于干法刻蚀系统的反应腔内，反应腔与抽真空装置相连接，反应腔包括可拆卸连接的腔盖11，腔盖上设置有若干个反应气体进气孔，腔盖底部设置有与上射频相连接的上耦合线圈，电极与下射频相连接。
由于，上射频连接至上部耦合线圈，使得反应气体电离产生等离子体，下射频连接至放置晶圆的电极3，给等离子体提供加速度。
晶圆包括大晶圆41和小晶圆42，大晶圆的直径大于小晶圆的直径。
如图7所示，一种干法刻蚀系统用尺寸转换托盘，包括与电极30可拆卸连接的小尺寸转换托盘50。
本发明中，如图2和图3所示，电极包括密封可拆卸连接的电极上盖31和电极底座32，电极上盖31和电极底座32优选通过螺栓326进行连接。
电极材质为金属，通常为铝或不锈钢材质，可通射频，形状一般为圆盘状。
电极上盖的中心设置有冷却气孔311，电极上盖的上表面同轴设置有大晶圆放置槽313，大晶圆放置槽用于大晶圆的放置，放置效果如图4所示。
大晶圆放置槽313的内径比大晶圆的外径大1-2mm，深度比大晶圆厚度小0.2-0.5mm。
大晶圆放置槽内设置有若干个均与冷却气孔相连通的冷却气大尺寸均布槽314，冷却气大尺寸均布槽314优选为呈发散状的圆盘。
位于大晶圆放置槽外周的电极上盖上设置有大晶圆压紧装置，大晶圆压紧装置优选为大压片315，但也可以为压环等。大压片的材质可以为铝，不锈钢或陶瓷等。
大压片沿电极上盖的周向均匀布设，优选为3-5片，每片大压片的外侧端优选通过螺栓进行连接。
电极上盖的下表面设置有冷水槽312，冷水槽优选呈S形或蛇形等。
电极底座上设置有冷水进口321、冷水出口322和冷却气进口323；其中，冷水进口和冷水出口均与冷水槽相连通，冷却气进口通过冷却气传送管325与冷却气孔相连通；冷却气从冷却气进口通入，冷却气优选为惰性气体，进一步优选为氦气。
如图5至图7所示，小尺寸转换托盘与电极上盖尺寸形状相同，可略小于电极尺寸；小尺寸转换托盘的材质与电极材质相同，可以为铝或不锈钢等，厚度约5-8mm，形状为圆盘状。
小尺寸转换托盘的底面设置有冷却气密封槽52，冷却气密封槽密封包覆在大晶圆压紧装置的外周，防止冷却气泄露。
小尺寸转换托盘的中心设置有冷却气贯通孔51；小尺寸转换托盘的上表面同轴设置有小晶圆放置槽53，小晶圆放置槽用于小晶圆42的放置，小晶圆放置槽内设置有若干个均与冷却气贯通孔相连通的冷却气小尺寸均布槽54，冷却气小尺寸均布槽优选为呈发散状的圆盘。
小晶圆放置槽的内径比小晶圆的外径大1-2mm，深度比小晶圆厚度小0.2-0.5mm。
位于小晶圆放置槽外周的小尺寸转换托盘上设置有小晶圆压紧装置，小晶圆压紧装置优选为沿周向均布的小压片55，优选为3-5片，作为替换，也可以为压环等。小压片的材质可以为铝，不锈钢或陶瓷等。
每个小压片的外侧端均优选与对应的小尺寸转换托盘通过螺栓进行连接。
位于小晶圆压紧装置外周的小尺寸转换托盘上优选设置于小压片数量相等的托盘固定孔56，通过穿过托盘固定孔的螺栓，将小尺寸转换托盘与电极上盖进行拆卸连接。
大晶圆刻蚀时，打开腔盖，将小尺寸转换托盘拆下，将大晶圆放置于电极上盖上表面的大晶圆放置槽中，并使用大压片压紧大晶圆，关闭腔盖，抽真空装置对反应腔室抽真空到一定程度，开启上下射频，通入反应气体，即可进行刻蚀反应；结束后给反应腔室充气，打开腔盖，取出大晶圆。
大晶圆刻蚀过程中，冷却气如氦气，经冷却气进口进入，通过冷却气孔达到电极上盖上表面，经冷却气大尺寸分布槽进行分散，给大晶圆实施冷却；大压片则能防止大晶圆被氦气吹走。
小晶圆刻蚀时，打开腔盖，将小尺寸转换托盘与电极上盖同轴可拆卸连接，并使得小尺寸转换托盘底部的冷却气密封槽密封罩盖在大晶圆放置槽的外周，防止冷却气的泄露。接着，将小晶圆放置在小尺寸转换托盘上表面的小晶圆放置槽中，并使用小压片压紧小晶圆，关闭腔盖，抽真空装置对反应腔室抽真空到一定程度，开启上下射频，通入反应气体，即可进行刻蚀反应；结束后给反应腔室充气，打开腔盖，取出小晶圆。
小晶圆刻蚀过程中，冷却气经冷却气进口进入，通过冷却气孔达到电极上盖上表面，一部分冷却气经冷却气大尺寸分布槽进行分散，给小尺寸转换托盘底面实施冷却；另一部分冷却气经冷却气贯通孔，进入冷却气小尺寸分布槽，并经冷却气小尺寸分布槽进行分散，给小晶圆背面实施冷却，小压片则能防止小晶圆被冷却气吹走。
以上详细描述了本发明的优选实施方式，但是，本发明并不限于上述实施方式中的具体细节，在本发明的技术构思范围内，可以对本发明的技术方案进行多种等同变换，这些等同变换均属于本发明的保护范围。

Claims (7)

1.一种干法刻蚀系统用尺寸转换托盘，其特征在于：包括与电极可拆卸连接的小尺寸转换托盘；
电极位于干法刻蚀系统的反应腔内，电极包括密封可拆卸连接的电极上盖和电极底座；
电极上盖的中心设置有冷却气孔，电极上盖的上表面同轴设置有大晶圆放置槽，大晶圆放置槽用于大晶圆的放置，大晶圆放置槽内设置有若干个均与冷却气孔相连通的冷却气大尺寸均布槽；
位于大晶圆放置槽外周的电极上盖上设置有大晶圆压紧装置；
电极上盖的下表面设置有冷水槽；
电极底座上设置有冷水进口、冷水出口和冷却气进口；其中，冷水进口和冷水出口均与冷水槽相连通，冷却气进口通过冷却气传送管与冷却气孔相连通；冷却气从冷却气进口通入；
小尺寸转换托盘与电极上盖尺寸形状相同，小尺寸转换托盘的底面设置有冷却气密封槽，冷却气密封槽密封包覆在大晶圆压紧装置的外周；
小尺寸转换托盘的中心设置有冷却气贯通孔；小尺寸转换托盘的上表面同轴设置有小晶圆放置槽，小晶圆放置槽用于小晶圆的放置，小晶圆放置槽内设置有若干个均与冷却气贯通孔相连通的冷却气小尺寸均布槽；
位于小晶圆放置槽外周的小尺寸转换托盘上设置有小晶圆压紧装置。
2.根据权利要求1所述的干法刻蚀系统用尺寸转换托盘，其特征在于：冷却气为惰性气体。
3.根据权利要求2所述的干法刻蚀系统用尺寸转换托盘，其特征在于：冷却气为氦气。
4.根据权利要求1所述的干法刻蚀系统用尺寸转换托盘，其特征在于：大晶圆压紧装置和小晶圆压紧装置均为沿周向均布的压片。
5.根据权利要求4所述的干法刻蚀系统用尺寸转换托盘，其特征在于：每个压片的外侧端均与对应的小尺寸转换托盘或电极上盖可拆卸连接。
6.根据权利要求1所述的干法刻蚀系统用尺寸转换托盘，其特征在于：冷水槽呈S形或蛇形。
7.根据权利要求1所述的干法刻蚀系统用尺寸转换托盘，其特征在于：反应腔与抽真空装置相连接，反应腔包括可拆卸连接的腔盖，腔盖上设置有若干个反应气体进气孔，腔盖底部设置有与上射频相连接的上耦合线圈，电极与下射频相连接。
CN201910404457.1A 2019-05-15 2019-05-15 一种干法刻蚀系统用尺寸转换托盘 Active CN110137130B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910404457.1A CN110137130B (zh) 2019-05-15 2019-05-15 一种干法刻蚀系统用尺寸转换托盘

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910404457.1A CN110137130B (zh) 2019-05-15 2019-05-15 一种干法刻蚀系统用尺寸转换托盘

Publications (2)

Publication Number Publication Date
CN110137130A true CN110137130A (zh) 2019-08-16
CN110137130B CN110137130B (zh) 2020-12-29

Family

ID=67574428

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910404457.1A Active CN110137130B (zh) 2019-05-15 2019-05-15 一种干法刻蚀系统用尺寸转换托盘

Country Status (1)

Country Link
CN (1) CN110137130B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081541A (zh) * 2019-10-18 2020-04-28 桂林电子科技大学 一种基于深硅刻蚀的柔性硅片及其制备方法
CN115241114A (zh) * 2022-08-17 2022-10-25 常熟市兆恒众力精密机械有限公司 一种晶圆盘夹具

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100059261A (ko) * 2008-11-26 2010-06-04 세메스 주식회사 기판 지지 장치
CN105793974A (zh) * 2013-12-06 2016-07-20 应用材料公司 用于较小晶片及晶片片段的晶片载具
CN106611734A (zh) * 2015-10-21 2017-05-03 亿力鑫系统科技股份有限公司 定心装置及具有该定心装置的处理设备
KR20180108435A (ko) * 2017-03-24 2018-10-04 가부시키가이샤 스크린 홀딩스 기판 유지 회전 장치 및 그것을 구비한 기판 처리 장치, 및 기판 처리 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100059261A (ko) * 2008-11-26 2010-06-04 세메스 주식회사 기판 지지 장치
CN105793974A (zh) * 2013-12-06 2016-07-20 应用材料公司 用于较小晶片及晶片片段的晶片载具
CN106611734A (zh) * 2015-10-21 2017-05-03 亿力鑫系统科技股份有限公司 定心装置及具有该定心装置的处理设备
KR20180108435A (ko) * 2017-03-24 2018-10-04 가부시키가이샤 스크린 홀딩스 기판 유지 회전 장치 및 그것을 구비한 기판 처리 장치, 및 기판 처리 방법

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
I.PRENCIPE等: "Targets for high repetition rate laser facilities:needs,challenges and perspectives", 《HIGH POWER LASER SCIENCE AND ENGINEERING》 *
STEPHEN HWANG等: "晶圆表面等离子蚀刻均匀性控制技术的进步 ", 《电子工业专用设备》 *
孙钰淳; 程嘉; 路益嘉; 侯悦民; 季林红: "Design space of electrostatic chuck in etching chamber", 《JOURNAL OF SEMICONDUCTORS》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111081541A (zh) * 2019-10-18 2020-04-28 桂林电子科技大学 一种基于深硅刻蚀的柔性硅片及其制备方法
CN115241114A (zh) * 2022-08-17 2022-10-25 常熟市兆恒众力精密机械有限公司 一种晶圆盘夹具
CN115241114B (zh) * 2022-08-17 2023-10-10 常熟市兆恒众力精密机械有限公司 一种晶圆盘夹具

Also Published As

Publication number Publication date
CN110137130B (zh) 2020-12-29

Similar Documents

Publication Publication Date Title
CN100494471C (zh) 陶瓷喷镀部件及其制造方法、执行该方法的程序、存储介质
CN110137130A (zh) 一种干法刻蚀系统用尺寸转换托盘
JP3312163B2 (ja) 真空吸着装置
JPH08335567A (ja) プラズマ処理装置
TW498386B (en) Method and apparatus for plasma processing
JP2003519932A (ja) 真空処理装置
JPH09181153A (ja) 半導体ウェーハ固定装置
CN210469842U (zh) 一种低温容性和感性复合耦合射频等离子体反应器
CN109778138A (zh) 一种微波等离子体金刚石膜沉积设备
CN101042991B (zh) 等离子体处理装置
CN209652424U (zh) 一种对真空环境有效密封的mpcvd装置
US6830653B2 (en) Plasma processing method and apparatus
CN110361143A (zh) 利用气体检测半导体碳化硅衬底大尺寸微管的方法及装置
CN216054569U (zh) 一种等离子体刻蚀机的腔体
JP3996002B2 (ja) 真空処理装置
CN209854285U (zh) 一种有效提高石英扩散炉内温度稳定性的保温桶
CN214378323U (zh) 一种等离子体处理装置
CN208151477U (zh) 一种可控制气流均匀平稳的pecvd装置
CN102333410A (zh) 一种用于刻蚀光阻材料的大气压冷等离子体射流装置
JP2017216370A (ja) ドライエッチング装置
JPH0516088A (ja) 吸着保持具
CN109935541A (zh) 一种反应腔室
CN211122197U (zh) 一种等离子体材料表面改性样品台
CN218548399U (zh) 一种适用多尺寸晶圆刻蚀的托盘装置
CN219066755U (zh) 一种一体式真空腔体

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province

Patentee after: Jiangsu Luwen Instrument Co.,Ltd.

Address before: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province

Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd.

CP03 Change of name, title or address