CN110137087A - The production method and wearable device of thermally conductive encapsulating structure - Google Patents
The production method and wearable device of thermally conductive encapsulating structure Download PDFInfo
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- CN110137087A CN110137087A CN201811126999.9A CN201811126999A CN110137087A CN 110137087 A CN110137087 A CN 110137087A CN 201811126999 A CN201811126999 A CN 201811126999A CN 110137087 A CN110137087 A CN 110137087A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 9
- 230000005496 eutectics Effects 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 241000196324 Embryophyta Species 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000036760 body temperature Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Invention provides a kind of production method of thermally conductive encapsulating structure, includes the following steps: to provide a heat-conducting plate and chip；The chip is fixed on the side of the heat-conducting plate；Making devices pin configuration, the pad of the chip are connected with the device pin structure；The chip and the device pin structure are packaged by the encapsulated layer, the chip, the device pin structure and the encapsulated layer are respectively positioned on the same side of the heat-conducting plate.The encapsulating structure that production method according to the thermally conductive encapsulating structure is made can have preferable heating conduction.
Description
The application be the applying date be on February 08th, 2018, application No. is 201810126868.4, entitled " thermally conductive encapsulation
The divisional application of structure, production method and the wearable device with it " patent of invention.
Technical field
The present invention relates to a kind of chip encapsulation technology field, the production method of especially a kind of thermally conductive encapsulating structure and can wear
Wear equipment.
Background technique
In recent years, with the development of technology, sensor using more and more extensive, different working environment to sensor
Packing forms and encapsulation performance are put forward new requirements.
In various requirement, heat management is one of the important content of sensor encapsulation, in the prior art, for sensor
Thermally conductive demand, generally can be there are three types of packing forms, one is being conducted using pcb board to heat, such conduction pattern
It will cause the increase of sensor whole design difficulty；One is being encapsulated using plug-in unit, such packaged type will cause in use
More inconvenience, there are also one is Metal Packaging is used, this is needed using substrate and Metal Packaging shell, this can significantly promote envelope
Dress up this.
In various sensors, temperature sensor is that purposes is most wide, one of most commonly used sensor, and temperature sensor needs
There is faster corresponding speed to temperature, this is even more that more harsh requirement is proposed to the packaged type of temperature sensor.
How rapidly to carry out thermally conductive, this becomes a problem on sensor-packaging structure.
Summary of the invention
In view of this, being led the present invention provides the production method and wearable device of a kind of thermally conductive encapsulating structure according to this
The encapsulating structure that the production method of heat-sealing assembling structure is made can have preferable heating conduction.
The present invention provides a kind of production methods of thermally conductive encapsulating structure, include the following steps:
One heat-conducting plate and chip are provided；
The chip is fixed on the side of the heat-conducting plate；
Making devices pin configuration, the pad of the chip are connected with the device pin structure；
The chip and the device pin structure are packaged by the encapsulated layer, the chip, the device
Pin configuration and the encapsulated layer are respectively positioned on the same side of the heat-conducting plate.
Further, the chip is fixed on the heat-conducting plate by conductive rubber or eutectic Welding.
Further, when the heat-conducting plate is metal heat-conducting plate, this method further includes providing a metal framework, institute
State metal framework include the heat-conducting plate and with the integrally formed metallic support of the heat-conducting plate, completed on the heat-conducting plate
After the pad bonding interconnection and encapsulation of the patch, chip of the chip, part extra on the metal framework is cut off, with
Second for forming the first deriving structure being connected with heat-conducting plate on thermally conductive encapsulating structure and not being connected with the heat-conducting plate is drawn
Structure.
Further, the one end being connected in second deriving structure with bonding wire is protruded into the encapsulated layer, remaining
Part extends along the surface of the encapsulated layer.
Further, the metallic support of second deriving structure is packaged in the encapsulated layer.
Further, when the heat-conducting plate is ceramic plate, this method further includes the shape on the ceramic plate
At conducting wire, ball is planted to form device bonding pad far from one end of the chip pad in the conducting wire.
Further, the chip is NTC chip or MOS chip.
The present invention also provides a kind of wearable device, which includes thermally conductive encapsulating structure, the thermally conductive encapsulation
The production method of structure thermally conductive encapsulating structure provided by the present invention is made.
In conclusion in the present invention, being set as the only side from heat-conducting plate by the setting of heat-conducting plate, and by encapsulated layer
Chip and device pin structure are packaged, it is largely logical that chip and external heat, which only have small part to be transferred to circuit board,
It crosses heat-conducting plate to shed, since chip is set on heat-conducting plate, can preferably complete the thermally conductive of chip.Further
Ground, due to the presence of encapsulated layer, which can also reduce interference of the heat source on circuit board to chip.In addition heat-conducting plate is separate
The side of chip can be attached directly on human body, which no longer needs to plus other conducting-heat elements may be directly applied to
Body temperature test, structure is simple and has faster temperature-responsive speed.
The above description is only an overview of the technical scheme of the present invention, in order to better understand the technical means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow above and other objects, features and advantages of the invention can
It is clearer and more comprehensible, it is special below to lift preferred embodiment, and cooperate attached drawing, detailed description are as follows.
Detailed description of the invention
Fig. 1 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that first embodiment of the invention provides.
Fig. 2 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that second embodiment of the invention provides.
Fig. 3 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that third embodiment of the invention provides.
Fig. 4 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that fourth embodiment of the invention provides.
Fig. 5 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that fifth embodiment of the invention provides.
Fig. 6 is the flow chart of the production method of thermally conductive encapsulating structure provided by the invention.
Fig. 7 A- Fig. 7 D is the section of each step of the production method for the thermally conductive encapsulating structure that sixth embodiment of the invention provides
Structural schematic diagram.
Fig. 8 A- Fig. 8 D is the section of each step of the production method for the thermally conductive encapsulating structure that seventh embodiment of the invention provides
Structural schematic diagram.
Specific embodiment
It is of the invention to reach the technical means and efficacy that predetermined goal of the invention is taken further to illustrate, below in conjunction with
Attached drawing and preferred embodiment, detailed description are as follows.
It is set the present invention provides a kind of production method of thermally conductive encapsulating structure and with the wearable of the thermally conductive encapsulating structure
Standby, which can have preferable heating conduction.
Fig. 1 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that first embodiment of the invention provides, as shown in Figure 1,
In first embodiment of the invention, thermally conductive encapsulating structure includes heat-conducting plate 10, chip 20, device pin structure 30 and encapsulated layer 40,
Chip 20 is set on heat-conducting plate 10, and encapsulated layer 40 is coated on outside chip 20, and make chip 20, the device pin structure 30 and
Encapsulated layer 40 is respectively positioned on the same side of heat-conducting plate 10, and the device pin structure 30 is by the chip 20 out of described encapsulated layer 40
It draws, that is, encapsulated layer 40 is only packaged chip 20 and device pin structure 30 from heat-conducting plate 10 side, it is thermally conductive
Encapsulating structure is connected by device pin structure 30 with circuit board (see dotted portion in Fig. 1) in the side far from heat-conducting plate 10.
In the present embodiment, it by the setting of heat-conducting plate 10, and sets encapsulated layer 40 to only from the side of heat-conducting plate 10
Chip 20 and device pin structure 30 are packaged, chip 20 seldom passes through the incoming electricity of encapsulated layer 40 with exchanging for external heat
Road plate, it is most of to be shed by heat-conducting plate 10, since chip 20 is set on heat-conducting plate 10, can preferably complete
Chip 20 it is thermally conductive, have faster corresponding speed to extraneous temperature.
Further, in the present embodiment, device pin structure 30 includes device bonding pad deriving structure 31 and device bonding pad
32, the pad of chip 20 is connected by pad bonding structure with the device bonding pad deriving structure 31, and the pad of chip 20 is passed sequentially through
It is drawn after device bonding pad deriving structure 31 and device bonding pad 32 from the encapsulated layer 40, thermally conductive encapsulating structure passes through device bonding pad 32
It is connected with circuit board.
More specifically, in the present embodiment, chip 20 can be NTC (Negative Temperature
Coefficient negative tempperature coefficient thermistor) chip.
Device bonding pad deriving structure 31 includes the first deriving structure 311 and the second deriving structure 312.Specifically, in this reality
It applies in example, heat-conducting plate 10 can be metal heat-conducting plate 10, and the first deriving structure 311 includes the metal being connected with metal heat-conducting plate 10
Bracket.Second deriving structure 312 includes and the disjunct metallic support of metal heat-conducting plate 10.
Chip 20 can be realized by conducting resinl or eutectic Welding to be connected with heat-conducting plate 10.And realize 20 bonding plane of chip
On pad be connected directly with metal heat-conducting plate 10；Namely the pad of chip 20 after metal heat-conducting plate with the first deriving structure
Metallic support in 311 is connected, and metal heat-conducting plate assumes responsibility for the function of a part of signal transmitting herein；Chip 20 it is remaining
Pad can be connected by the bonding wires such as gold thread, aluminum steel and alloy wire 51 with the metallic support in the second deriving structure 312.
In the equal shape in one end as the metallic support of the first deriving structure 311 and the second deriving structure 312 far from chip 20
The integrally formed metal pins of Cheng Youyu metallic support, using as the device bonding pad 32 in device pin structure 30.
In the present embodiment, one of pad of chip 20 is by heat-conducting plate 10 and the metallic support being connected with heat-conducting plate 10
It draws, and the metallic support that the remaining pad of chip 20 is connected by bonding wire 51 and not with heat-conducting plate 10 is drawn.Namely metal
Bracket is integrated with device bonding pad 32 and part of devices pad deriving structure 31.
In the present embodiment, the material of heat-conducting plate 10 can be the metals such as copper, iron, on the surface of metal heat-conducting plate 10 also
It is provided with passivation layer, such as nickel coating or nickel plating palladium layers (not shown), to prevent metal heat-conducting plate 10 from aoxidizing.In metal heat-conducting plate 10
On be additionally provided with Gold plated Layer (not shown), the company for passing through conducting resinl or eutectic Welding and metal heat-conducting plate 10 in favor of chip 20
It connects.
It further, can be more as the shape of device bonding pad deriving structure 31 and the metallic support of device bonding pad 32
Kind, in the present embodiment, the one end being connected in the second deriving structure 312 with bonding wire 51 is protruded into encapsulated layer 40, remaining part
The surface along encapsulated layer 40 is divided to extend, device bonding pad 32 is formed on surface of the encapsulated layer 40 far from 10 side of heat-conducting plate.
During making thermally conductive encapsulating structure, a metal framework (see Fig. 7 A- Fig. 7 D), the gold can be provided in advance
Belong to frame include heat-conducting plate 10 and with the integrally formed metallic support of heat-conducting plate 10, on heat-conducting plate 10 complete chip 20 patch
After piece, chip 20pad bonding interconnection and injection molding packaging, part extra on metal framework is cut off, there is this hair to be formed
The device of bright thermally conductive encapsulating structure feature.
Encapsulated layer 40 can be using the low heat conductivities energy encapsulating material such as epoxy resin or silica gel, and encapsulated layer 40 is from chip 20
Side is packaged chip 20, and the size of encapsulated layer 40 is not more than the size of heat-conducting plate 10.
In the present embodiment, it by the setting of heat-conducting plate 10, and sets encapsulated layer 40 to only from the side of heat-conducting plate 10
Chip 20 and device pin structure 30 are packaged, chip 20 and external heat only have small part to be transferred to circuit board, big portion
Dividing is shed by heat-conducting plate 10, since chip 20 is set on heat-conducting plate 10, can preferably complete chip 20
It is thermally conductive.Further, due to the presence of encapsulated layer 40, which can also reduce the heat source on circuit board to the dry of chip 20
It disturbs.In addition side of the heat-conducting plate 10 far from chip 20 can be attached directly on human body, which no longer needs to plus other
Conducting-heat elements may be directly applied to body temperature test, and structure is simple and has faster temperature-responsive speed.
Fig. 2 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that second embodiment of the invention provides, as shown in Fig. 2, this
The thermally conductive encapsulating structure that invention second embodiment provides and the thermally conductive encapsulating structure that first embodiment of the invention provides are essentially identical,
The difference is that in the present embodiment, chip 20 can be MOS (metal oxide semiconductor metal-oxygen
Compound-semiconductor) chip, it is identical with the first embodiment ground, one of pad of MOS chip is directly connected with heat-conducting plate 10, remains
Remaining pad passes through a bonding wire 51 respectively and is bonded with one second deriving structure 312, is finally drawn out in device bonding pad 32,
That is, in the present embodiment, a pad in MOS chip 20 is by the metallic support in heat-conducting plate 10 and the first deriving structure 311
(due to the limitation of cross-wise direction, the metallic support at this in Fig. 2 is not showed that) draws, other two pad out of encapsulated layer 40
Drawn out of encapsulated layer 40 by the metallic support in a bonding wire 51 and one second deriving structure 312.
Fig. 3 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that third embodiment of the invention provides, as shown in figure 3, this
The thermally conductive encapsulating structure and the thermally conductive encapsulating structure in second embodiment that invention 3rd embodiment provides are essentially identical, difference
Be in: the metallic support as the second deriving structure 312 is packaged in encapsulated layer 40.
Namely before this invention in three embodiments, encapsulated layer 40 is at least by chip 20, bonding wire 51, and at least portion
Device bonding pad deriving structure 31 is divided to encapsulate.
Fig. 4 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that fourth embodiment of the invention provides, as shown in figure 4, this
The thermally conductive encapsulating structure that invention fourth embodiment provides and the thermally conductive encapsulating structure that first embodiment of the invention provides are essentially identical,
The difference is that in the present embodiment, heat-conducting plate 10 is ceramic plate 10, such as Al2O3, AlN, BeO, SiC or Si3N4
Be laid on surface Deng the side where, heat-conducting plate 10 towards chip 20 conducting wire made of the metal materials such as Ag, Au with
As device bonding pad deriving structure 31, in the first deriving structure 311, conducting wire protrudes into chip 20 close to one end of chip 20
Towards in the projection of 10 direction of heat-conducting plate, so that one of pad of chip 20 passes through conducting resinl or eutectic Welding
It is connected with the conducting wire in the first deriving structure 311；The remaining pad of chip 20 passes through bonding wire 51 and the second deriving structure
Conducting wire in 312 is connected, and conducting wire is far from chip 20 in the first deriving structure 311 and the second deriving structure 312
One end makes the soldered balls such as tin ball as device bonding pad 32.Soldered ball passes through plant ball technique and is fixed on heat-conducting plate 10 towards chip 20 1
On the surface of side.In the present embodiment, chip 20 is 20 temperature sensor of NTC chip.
In thermally conductive encapsulating structure provided in this embodiment, the quantity of chip 20 is one, it is possible to understand that ground, in other realities
It applies in example, the quantity of chip 20 can be multiple.
In conclusion in the present invention, by laying conducting wire on heat-conducting plate 10, and weldering is arranged in conducting wire
Ball makes chip 20, soldered ball and encapsulated layer 40 be respectively positioned on the same side of heat-conducting plate 10, eliminates manufacture through-hole as device bonding pad 32
This complicated process reduces the cost of encapsulation.
Fig. 5 is the cross section structure schematic diagram for the thermally conductive encapsulating structure that fifth embodiment of the invention provides, as shown in figure 5, this
It invents the thermally conductive encapsulating structure that the 5th embodiment provides and the thermally conductive encapsulating structure that fourth embodiment of the invention provides is essentially identical,
The difference is that in the present embodiment, chip 20 is MOS chip 20, and a pad in MOS chip 20 is directly with first
Conducting wire (due to the limitation of cross-wise direction, the first outer lead is not showed that in Fig. 5) in deriving structure 311 is connected, MOS core
Other two pad of piece 20 is respectively successively by the conducting wire and one in a bonding wire 51, one second deriving structure 312
Soldered ball as device bonding pad 32 is connected.
Fig. 6 is the flow chart of the production method of thermally conductive encapsulating structure provided by the invention, as shown in fig. 6, the present invention provides
The production method of thermally conductive encapsulating structure include the following steps:
One heat-conducting plate 10 and chip 20 are provided；
Chip 20 is fixed on the side of heat-conducting plate 10；
Making devices pin configuration 30, and the pad of chip 20 is connected with device pin structure 30；
Chip 20 and device pin structure 30 are packaged by encapsulated layer 40, chip 20, device pin structure 30 and
Encapsulated layer 40 is respectively positioned on the same side of heat-conducting plate 10.
Fig. 7 A- Fig. 7 D is the section of each step of the production method for the thermally conductive encapsulating structure that sixth embodiment of the invention provides
Structural schematic diagram, as shown in Fig. 7 A- Fig. 7 D, when heat-conducting plate 10 is metal heat-conducting plate 10, the first deriving structure 311 and second is drawn
When structure 312 is metallic support, this method comprises the following steps:
One metal framework is provided, the metal framework include heat-conducting plate 10 and with the integrally formed metal branch of heat-conducting plate 10
Frame；
Chip 20 is fixed on heat-conducting plate 10 by conducting resinl or eutectic Welding, and makes one of them of chip 20
It is connected between pad and heat-conducting plate 10；
The remaining pad of chip 20 is passed through a bonding wire 51 respectively to be connected with a metal lead wire；
Chip 20 is packaged；
By part excision extra on metallic support, to form be connected with heat-conducting plate 10 first on thermally conductive encapsulating structure
Deriving structure 311 and the second deriving structure 312 not being connected with heat-conducting plate 10.
In the present embodiment, before chip 20 is fixed on heat-conducting plate 10, heat-conducting plate 10 also needs to be passivated processing
To form passivation layer on the surface of heat-conducting plate 10, and Gold plated Layer is formed on the passivation layer.
Fig. 8 A- Fig. 8 D is the section of each step of the production method for the thermally conductive encapsulating structure that seventh embodiment of the invention provides
Structural schematic diagram, as D shown in FIGS. 8 A-8, in the seventh embodiment of the present invention, when heat-conducting plate 10 is ceramic plate 10,
This method comprises:
One heat-conducting plate 10 is provided, and makes conducting wire and pin on heat-conducting plate 10；
Pin is carried out in conducting wire and plants ball, specifically can then be crossed and be flowed back using print solder paste or patch tin ball
It completes to plant ball, to form device bonding pad 32；
Chip 20 is fixed on the side of heat-conducting plate 10 by conducting resinl or eutectic Welding, and makes chip 20 wherein
One pad is connected with the conducting wire on heat-conducting plate 10；
The remaining pad of chip 20 is connected each by a bonding wire 51 with a conducting wire；
Chip 20 is packaged.
The present invention also provides a kind of wearable device, which includes thermally conductive encapsulation knot of the present invention
Structure refers to the prior art, details are not described herein about other technical characteristics of the wearable device.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
It is right according to the technical essence of the invention for the equivalent embodiment of equivalent variations, but without departing from the technical solutions of the present invention
Any simple modification, equivalent change and modification made by above embodiments, all of which are still within the scope of the technical scheme of the invention.
Claims (8)
1. a kind of production method of thermally conductive encapsulating structure, characterized by the following steps:
One heat-conducting plate (10) and chip (20) are provided；
The chip (20) is fixed on the side of the heat-conducting plate (10)；
Making devices pin configuration (30), the pad of the chip (20) are connected with the device pin structure (30)；
The chip (20) and the device pin structure (30) are packaged by the encapsulated layer (40), the chip
(20), the device pin structure (30) and the encapsulated layer (40) are respectively positioned on the same side of the heat-conducting plate (10).
2. the production method of thermally conductive encapsulating structure as described in claim 1, it is characterised in that: this method further include: the core
Piece (20) is fixed on the heat-conducting plate (10) by conductive rubber or eutectic Welding.
3. the production method of thermally conductive encapsulating structure as described in claim 1, it is characterised in that: when the heat-conducting plate (10) are gold
Belong to heat-conducting plate when, this method further includes providing a metal framework, the metal framework include the heat-conducting plate (10) and with
The integrally formed metallic support of the heat-conducting plate (10), completes patch, the core of the chip (20) on the heat-conducting plate (10)
After the pad bonding interconnection and encapsulation of piece (20), part extra on the metal framework is cut off, in thermally conductive encapsulating structure
Upper second for forming the first deriving structure (311) being connected with heat-conducting plate (10) and not being connected with the heat-conducting plate (10) draws knot
Structure (312).
4. the production method of thermally conductive encapsulating structure as claimed in claim 3, it is characterised in that: second deriving structure
(312) one end being connected in bonding wire (51) is protruded into the encapsulated layer (40), and rest part is along the encapsulated layer (40)
Surface extend.
5. the production method of thermally conductive encapsulating structure as claimed in claim 3, it is characterised in that: second deriving structure
(312) metallic support is packaged in the encapsulated layer (40).
6. the production method of thermally conductive encapsulating structure as described in claim 1, it is characterised in that: when the heat-conducting plate (10) are pottery
When porcelain heat-conducting plate, this method further includes forming conducting wire on the ceramic plate, in the conducting wire far from described
Ball is planted to form device bonding pad (32) in one end of chip (20) pad.
7. the production method of thermally conductive encapsulating structure as described in claim 1, it is characterised in that: the chip (20) is NTC core
Piece or MOS chip.
8. a kind of wearable device, it is characterised in that: including thermally conductive encapsulating structure, the thermally conductive encapsulating structure is by claim 1
Production method to thermally conductive encapsulating structure described in any one of 7 is made.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811126999.9A CN110137087A (en) | 2018-02-08 | 2018-02-08 | The production method and wearable device of thermally conductive encapsulating structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811126999.9A CN110137087A (en) | 2018-02-08 | 2018-02-08 | The production method and wearable device of thermally conductive encapsulating structure |
| CN201810126868.4A CN110137142A (en) | 2018-02-08 | 2018-02-08 | Thermally conductive encapsulating structure, production method and the wearable device with it |
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| CN201810126868.4A Division CN110137142A (en) | 2018-02-08 | 2018-02-08 | Thermally conductive encapsulating structure, production method and the wearable device with it |
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| CN201811126999.9A Pending CN110137087A (en) | 2018-02-08 | 2018-02-08 | The production method and wearable device of thermally conductive encapsulating structure |
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| JPH08236557A (en) * | 1995-02-28 | 1996-09-13 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| JPH1154665A (en) * | 1997-07-31 | 1999-02-26 | Toshiba Corp | Composite package |
| JP2004327855A (en) * | 2003-04-25 | 2004-11-18 | Nec Electronics Corp | Semiconductor device and its manufacturing method |
| US20080230876A1 (en) * | 2007-03-22 | 2008-09-25 | Stats Chippac, Ltd. | Leadframe Design for QFN Package with Top Terminal Leads |
| US20140210062A1 (en) * | 2013-01-28 | 2014-07-31 | Texas Instruments Incorporated | Leadframe-Based Semiconductor Package Having Terminals on Top and Bottom Surfaces |
| JP2016004792A (en) * | 2014-06-13 | 2016-01-12 | パナソニックＩｐマネジメント株式会社 | Semiconductor device, method of manufacturing the same, and equipment |
| US20170301612A1 (en) * | 2016-04-14 | 2017-10-19 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831986A (en) * | 1994-07-15 | 1996-02-02 | Toyota Autom Loom Works Ltd | Semiconductor device having heatsink |
| CN202797063U (en) * | 2012-07-17 | 2013-03-13 | 佛山市国星光电股份有限公司 | LED packaging structure |
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- 2018-02-08 CN CN201811126999.9A patent/CN110137087A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08236557A (en) * | 1995-02-28 | 1996-09-13 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| JPH1154665A (en) * | 1997-07-31 | 1999-02-26 | Toshiba Corp | Composite package |
| JP2004327855A (en) * | 2003-04-25 | 2004-11-18 | Nec Electronics Corp | Semiconductor device and its manufacturing method |
| US20080230876A1 (en) * | 2007-03-22 | 2008-09-25 | Stats Chippac, Ltd. | Leadframe Design for QFN Package with Top Terminal Leads |
| US20140210062A1 (en) * | 2013-01-28 | 2014-07-31 | Texas Instruments Incorporated | Leadframe-Based Semiconductor Package Having Terminals on Top and Bottom Surfaces |
| JP2016004792A (en) * | 2014-06-13 | 2016-01-12 | パナソニックＩｐマネジメント株式会社 | Semiconductor device, method of manufacturing the same, and equipment |
| US20170301612A1 (en) * | 2016-04-14 | 2017-10-19 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
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| CN110137142A (en) | 2019-08-16 |
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