CN110112263A - Substrate for high-power LED packaging, substrate manufacturing method and packaging structure - Google Patents
Substrate for high-power LED packaging, substrate manufacturing method and packaging structure Download PDFInfo
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- CN110112263A CN110112263A CN201910395374.0A CN201910395374A CN110112263A CN 110112263 A CN110112263 A CN 110112263A CN 201910395374 A CN201910395374 A CN 201910395374A CN 110112263 A CN110112263 A CN 110112263A
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- Prior art keywords
- substrate
- power led
- metal block
- metal
- graphene coating
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- 239000000758 substrate Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000004806 packaging method and process Methods 0.000 title abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 42
- 239000010439 graphite Substances 0.000 claims abstract description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 35
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 238000005538 encapsulation Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 15
- 239000011889 copper foil Substances 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 238000004382 potting Methods 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000006071 cream Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 1
- 239000010426 asphalt Substances 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 230000002035 prolonged effect Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a substrate for high-power LED packaging, a manufacturing method of the substrate and a packaging structure of the substrate, wherein the substrate comprises a substrate and a packaging structure, a copper circuit, a heat conduction insulating layer, a graphite layer and a metal block of a graphene coating are arranged on the substrate, the packaging structure comprises an LED chip, a metal binding line, a lead frame and packaging resin, the substrate is exposed out of one side of the packaging structure, the metal binding line is arranged between the LED chip and the circuit, and the copper circuit and the lead frame are connected through the metal binding line, and the packaging resin is arranged on the outer side of the substrate. The substrate for packaging the high-power LED, the manufacturing method of the substrate and the packaging structure of the substrate are characterized in that the metal embedded block with the graphene coating is arranged in the graphite layer, so that the excellent transverse heat conduction characteristic of the original graphite layer is kept, the longitudinal heat conduction coefficient of the graphite layer is greatly improved, the problem that the longitudinal heat dissipation capacity of the graphite layer is poor is solved, the temperature of an LED chip is reduced, and the service life of a packaging body is prolonged.
Description
Technical field
The present invention relates to high-power LED encapsulation technical field, specially a kind of high-power LED encapsulation substrate, substrate system
Make method and its encapsulating structure.
Background technique
With the development of LED industry, great power LED and its encapsulating structure are rapidly developed, and the encapsulation volume of great power LED is got over
Next smaller, at the same time, the chip power inside high-power LED encapsulation body is increasing, so as to cause intracorporal temperature is encapsulated
Degree rises higher and higher.As the temperature rises, if LED itself chip cannot be distributed quickly, it is easy to lead to wick
Chip due to temperature it is excessively high and fail or light decay it is serious, so that the service life be made to be greatly reduced.Heating problem has been considered to be big function
The encapsulation of rate LED industry designs faced one of important technological problems.Therefore, the heat dissipation problem of LED is the most important thing.From current
Design from the point of view of, great power LED generally uses metal substrate to come as heat radiation substrate for LED core to preferably radiate
Piece heat dissipation.And the capacity of heat transmission of substrate is most important for the packaging body heat dissipation of great power LED.CN201721738604.1 is public
A kind of high power semiconductor base plate for packaging is opened, including graphite linings and for the metal wiring layer of chip, metal line
Layer is fixed on the side of graphite linings by insulating adhesive, it is therefore an objective to so that graphite linings is absorbed the heat that chip generates, reach heat dissipation
Effect, but graphite linings lateral heat dissipation is preferable in the patent, and longitudinal heat dissipation is poor, requires longitudinal heat radiation energy in high-power LED chip
The higher application field of power, the cooling application of the graphite linings are very restricted.
Summary of the invention
It is an object of the invention to provide a kind of high-power LED encapsulation substrate, method for preparing substrate and its encapsulating structure,
To the problems mentioned above in the background art.
To achieve the above object, the invention provides the following technical scheme:
In a first aspect, the present invention provides a kind of high-power LED encapsulation substrates, including, substrate body, is led copper wire
The metal block of thermal insulation layer, graphite linings and graphene coating, the substrate body include copper wire, thermally conductive insulating layer, graphite linings
With the metal block of graphene coating, be not embedded with the metal block of graphene coating in the graphite linings, the graphite linings with it is thermally conductive
It is bonded between insulating layer by hot pressing method, the copper wire is combined together by rubbing method and thermally conductive insulating layer.
Preferably, the copper wire is etched by chemical solution.
Preferably, the heat filling of the thermally conductive insulating layer can be silica, aluminium oxide, boron nitride, silicon carbide, nitrogen
Change one or more combinations among aluminium.
Preferably, the metal block of the graphene coating is to send out vapor deposition graphite in metal block outer surface chemical vapor deposition
Alkene, the metal block of the graphene coating are at least embedded in 1, the metal block thickness and graphite of the metal block of the graphene coating
The thickness of piece is identical, and the thickness of coating of the metal block of the graphene coating is 1 nanometer -500 nanometers.
Second aspect, the present invention provides a kind of high-power LED encapsulation method for preparing substrate, comprising the following steps:
S1: copper foil surface is coated with thermal conductive insulation glue；
S2: in metal blocks surface chemistry gas phase uniform deposition graphene coating；
S3: graphite flake is punched hollow out, and will be in the graphene coated metal block insertion graphite flake of S2 production；
S4: the graphite flake with glue copper foil and S3 production made of S1 is subjected to hot pressing；
S5: the copper foil surface of force fit plate made of S4 is etched into route, forms LED substrate.
Preferably, 60-80 DEG C of baking 10-15min when being coated with thermal conductive insulation glue in the step S1, then 120-140 DEG C of baking
Roasting 10-15min, last 140-160 DEG C of baking 5-10min.
Preferably, 180-200 DEG C of pressing-in temp in the step S4, time 1-2 hour.
The third aspect, a kind of high-power LED encapsulation structure, including substrate and encapsulating structure are provided with copper on the substrate
The metal block of route, thermally conductive insulating layer, graphite linings and graphene coating, the encapsulating structure include LED chip, metal binding
Line, lead frame and potting resin, the substrate are exposed at the side of encapsulating structure, and the LED chip passes through with lead frame
Tin cream solder is welded in copper wire, and lead frame is arranged on rear side of LED chip, the metal binding line, the LED chip
It is connected between route and by metal binding line between the copper wire and lead frame, the potting resin setting exists
The outside of substrate.
Preferably, the material of the metal binding line can be copper, aluminium or gold.
Preferably, the potting resin is epoxy resin encapsulating material
Compared with prior art, the beneficial effects of the present invention are: the embodiment of the invention provides a kind of high-power LED encapsulations
With substrate, method for preparing substrate and its encapsulating structure, it is provided with the metal insert with graphene coating in graphite linings, keeps
Original graphite linings laterally thermally conductive excellent characteristic while, graphite linings are greatly promoted in longitudinal thermal coefficient, solve graphite
Layer longitudinal heat-sinking capability difference problem, LED chip temperature reduction, improve the service life of packaging body.
Detailed description of the invention
Fig. 1 is high-power LED encapsulation substrate schematic cross-sectional view of the present invention.
Fig. 2 is high-power LED encapsulation structure schematic cross-sectional view of the present invention.
Fig. 3 is schematic diagram method for preparing substrate block diagram of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of high-power LED encapsulation substrate, including, substrate body (1), copper wire
(11), the metal block (14) of thermally conductive insulating layer (12), graphite linings (13) and graphene coating, the substrate body (1) includes copper
The metal block (14) of route (11), thermally conductive insulating layer (12), graphite linings (13) and graphene coating, the graphite linings (13) are interior not
It is embedded with the metal block (14) of graphene coating, passes through hot pressing method between the graphite linings (13) and thermally conductive insulating layer (12)
Bonded, the copper wire (11) is combined together by rubbing method with thermally conductive insulating layer (12), the copper wire (11) by
Chemical solution etches.
Further, the metal block (14) of the graphene coating is to send out to be deposited in metal block outer surface chemical vapor deposition
Graphene, the metal block (14) of the graphene coating are at least embedded in 1, the metal of the metal block (14) of the graphene coating
Block thickness is identical as the thickness of graphite flake, and the thickness of coating of the metal block (14) of the graphene coating is 1 nanometer -500 nanometers.
Referring to Fig. 2, the present invention provides a kind of production method of high-power LED encapsulation substrate, to make above-mentioned base
Plate, comprising the following steps:
S1: copper foil surface is coated with thermal conductive insulation glue；First 60-80 DEG C of baking 10-15min, then 120-140 DEG C of baking 10-
15min, last 140-160 DEG C of baking 5-10min；
S2: in metal blocks surface chemistry gas phase uniform deposition graphene coating；
S3: graphite flake is punched hollow out, and will be in the graphene coated metal block insertion graphite flake of S2 production；
S4: the graphite flake with glue copper foil and S3 production made of S1 is subjected to hot pressing；180-200 DEG C of pressing-in temp, when
Between 1-2 hours；
S5: the copper foil surface of force fit plate made of S4 is etched into route, forms LED substrate.
Referring to Fig. 3, a kind of high-power LED encapsulation structure, including substrate (1) and encapsulating structure (2), the substrate (1)
On be provided with the metal block (14) of copper wire (11), thermally conductive insulating layer (12), graphite linings (13) and graphene coating, the encapsulation
Structure (2) includes LED chip (21), metal binding line (22), lead frame (23) and potting resin (24), the substrate (1)
It is exposed at the side of encapsulating structure (2), the LED chip (21) is welded on copper wire by tin cream solder with lead frame (23)
(11) on, and lead frame (23) setting is in LED chip (21) rear side, the metal binding line (22), the LED chip and line
It is connected between road (11) and by metal binding line (22) between the copper wire (11) and lead frame (23), the envelope
Resin (24) setting is filled in the outside of substrate (1).
Further, the material of the metal binding line (22) can be copper, aluminium or gold.
Further, the potting resin (24) is epoxy resin encapsulating material.
Although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art,
It is still possible to modify the technical solutions described in the foregoing embodiments, or part of technical characteristic is carried out etc.
With replacement, all within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in this
Within the protection scope of invention.
Claims (10)
1. a kind of high-power LED encapsulation substrate, including, substrate body (1), copper wire (11), thermally conductive insulating layer (12), graphite
The metal block (14) of layer (13) and graphene coating, it is characterised in that: the substrate body (1) includes copper wire (11), thermally conductive
The metal block (14) of insulating layer (12), graphite linings (13) and graphene coating, the graphite linings (13) are interior not to be embedded with graphene
The metal block (14) of coating is bonded between the graphite linings (13) and thermally conductive insulating layer (12) by hot pressing method, institute
Copper wire (11) are stated to be combined together by rubbing method with thermally conductive insulating layer (12).
2. high-power LED encapsulation substrate according to claim 1, it is characterised in that: the copper wire (11) is by chemistry
Solution etches.
3. high-power LED encapsulation substrate according to claim 1, it is characterised in that: the thermally conductive insulating layer (12)
Heat filling can be silica, aluminium oxide, boron nitride, silicon carbide, one or more combinations among aluminium nitride.
4. high-power LED encapsulation substrate according to claim 1, it is characterised in that: the metal block of the graphene coating
(14) to send out vapor deposition graphene in metal block outer surface chemical vapor deposition, the metal block (14) of the graphene coating is at least embedding
Enter 1, the metal block thickness of the metal block (14) of the graphene coating is identical as the thickness of graphite flake, the graphene coating
Metal block (14) thickness of coating be 1 nanometer -500 nanometers.
5. a kind of high-power LED encapsulation method for preparing substrate, it is characterised in that: the following steps are included:
S1: copper foil surface is coated with thermal conductive insulation glue；
S2: in metal blocks surface chemistry gas phase uniform deposition graphene coating；
S3: graphite flake is punched hollow out, and will be in the graphene coated metal block insertion graphite flake of S2 production；
S4: the graphite flake with glue copper foil and S3 production made of S1 is subjected to hot pressing；
S5: the copper foil surface of force fit plate made of S4 is etched into route, forms LED substrate.
6. high-power LED encapsulation substrate manufacture side according to claim 5, it is characterised in that: applied in the step S1
60-80 DEG C of baking 10-15mi n when cloth thermal conductive insulation glue, then 120-140 DEG C of baking 10-15mi n, last 140-160 DEG C of baking
5-10mi n。
7. high-power LED encapsulation method for preparing substrate according to claim 5, it is characterised in that: in the step S4
180-200 DEG C of pressing-in temp, time 1-2 hour.
8. a kind of high-power LED encapsulation structure, including substrate (1) and encapsulating structure (2), it is characterised in that: on the substrate (1)
It is provided with the metal block (14) of copper wire (11), thermally conductive insulating layer (12), graphite linings (13) and graphene coating, the encapsulation knot
Structure (2) includes LED chip (21), metal binding line (22), lead frame (23) and potting resin (24), and the substrate (1) is outside
It is exposed at the side of encapsulating structure (2), the LED chip (21) is welded on copper wire by tin cream solder with lead frame (23)
(11) on, and lead frame (23) setting is in LED chip (21) rear side, the metal binding line (22), the LED chip and line
It is connected between road (11) and by metal binding line (22) between the copper wire (11) and lead frame (23), the envelope
Resin (24) setting is filled in the outside of substrate (1).
9. high-power LED encapsulation structure according to claim 8, is characterized in that: the material of the metal binding line (22)
It can be copper, aluminium or gold.
10. high-power LED encapsulation structure according to claim 8, is characterized in that: the potting resin (24) is asphalt mixtures modified by epoxy resin
Rouge encapsulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910395374.0A CN110112263A (en) | 2019-05-13 | 2019-05-13 | Substrate for high-power LED packaging, substrate manufacturing method and packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910395374.0A CN110112263A (en) | 2019-05-13 | 2019-05-13 | Substrate for high-power LED packaging, substrate manufacturing method and packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110112263A true CN110112263A (en) | 2019-08-09 |
Family
ID=67489763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910395374.0A Pending CN110112263A (en) | 2019-05-13 | 2019-05-13 | Substrate for high-power LED packaging, substrate manufacturing method and packaging structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN110112263A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403362A (en) * | 2020-03-27 | 2020-07-10 | Tcl华星光电技术有限公司 | Chip on film packaging method, packaging structure, display device and electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111403362A (en) * | 2020-03-27 | 2020-07-10 | Tcl华星光电技术有限公司 | Chip on film packaging method, packaging structure, display device and electronic equipment |
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