CN110112114B - 一种三极管 - Google Patents
一种三极管 Download PDFInfo
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- CN110112114B CN110112114B CN201910352577.1A CN201910352577A CN110112114B CN 110112114 B CN110112114 B CN 110112114B CN 201910352577 A CN201910352577 A CN 201910352577A CN 110112114 B CN110112114 B CN 110112114B
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- 230000001681 protective effect Effects 0.000 claims abstract description 18
- 238000005452 bending Methods 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Telephone Set Structure (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910352577.1A CN110112114B (zh) | 2019-04-29 | 2019-04-29 | 一种三极管 |
Applications Claiming Priority (1)
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CN201910352577.1A CN110112114B (zh) | 2019-04-29 | 2019-04-29 | 一种三极管 |
Publications (2)
Publication Number | Publication Date |
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CN110112114A CN110112114A (zh) | 2019-08-09 |
CN110112114B true CN110112114B (zh) | 2020-09-25 |
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CN201910352577.1A Active CN110112114B (zh) | 2019-04-29 | 2019-04-29 | 一种三极管 |
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CN (1) | CN110112114B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113130404B (zh) * | 2021-04-02 | 2022-06-17 | 深圳市嘉兴南电科技有限公司 | 一种电动汽车车载5g天线用三极管 |
CN113758512A (zh) * | 2021-09-08 | 2021-12-07 | 昆山冠翔电子科技有限公司 | 一种传感器封装结构及传感器封装工艺 |
CN114927594A (zh) * | 2022-05-06 | 2022-08-19 | 浙江焜腾红外科技有限公司 | 一种高温红外制冷探测器芯片 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN204215838U (zh) * | 2014-11-14 | 2015-03-18 | 长兴和兴电子有限公司 | 电感元件 |
CN204680666U (zh) * | 2015-05-15 | 2015-09-30 | 衡阳财经工业职业技术学院 | 三极管引脚保护架 |
CN206118247U (zh) * | 2016-08-19 | 2017-04-19 | 东莞市佳骏电子科技有限公司 | 一种使用散热装置的三极管 |
CN206922059U (zh) * | 2017-02-21 | 2018-01-23 | 深圳市冠旭电子股份有限公司 | 数据线插头 |
CN207368799U (zh) * | 2017-07-17 | 2018-05-15 | 嵊州市东方电机有限公司 | 一种电机导线夹装置 |
CN207852680U (zh) * | 2018-03-01 | 2018-09-11 | 山东沂光集成电路有限公司 | 一种节能型低电压片式稳压三极管 |
CN207854400U (zh) * | 2017-08-29 | 2018-09-11 | 沃尔缇夫能源系统公司 | 一种管脚护套及电子插件 |
CN208571135U (zh) * | 2018-07-31 | 2019-03-01 | 宁波宏顺发电子有限公司 | 一种精密信号仪器电缆连接插头 |
-
2019
- 2019-04-29 CN CN201910352577.1A patent/CN110112114B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN204215838U (zh) * | 2014-11-14 | 2015-03-18 | 长兴和兴电子有限公司 | 电感元件 |
CN204680666U (zh) * | 2015-05-15 | 2015-09-30 | 衡阳财经工业职业技术学院 | 三极管引脚保护架 |
CN206118247U (zh) * | 2016-08-19 | 2017-04-19 | 东莞市佳骏电子科技有限公司 | 一种使用散热装置的三极管 |
CN206922059U (zh) * | 2017-02-21 | 2018-01-23 | 深圳市冠旭电子股份有限公司 | 数据线插头 |
CN207368799U (zh) * | 2017-07-17 | 2018-05-15 | 嵊州市东方电机有限公司 | 一种电机导线夹装置 |
CN207854400U (zh) * | 2017-08-29 | 2018-09-11 | 沃尔缇夫能源系统公司 | 一种管脚护套及电子插件 |
CN207852680U (zh) * | 2018-03-01 | 2018-09-11 | 山东沂光集成电路有限公司 | 一种节能型低电压片式稳压三极管 |
CN208571135U (zh) * | 2018-07-31 | 2019-03-01 | 宁波宏顺发电子有限公司 | 一种精密信号仪器电缆连接插头 |
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CN110112114A (zh) | 2019-08-09 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20200716 Address after: 233000 Room 1402, Ziyang Building, Pearl Plaza, Huaishang District, Bengbu City, Anhui Province Applicant after: Bengbu HRABERO Intellectual Property Service Co.,Ltd. Address before: 236000 Jinshan Building Unit 3, East Qinghe Road, Yingzhou District, Fuyang City, Anhui Province 301 Applicant before: Fuyang Chengbang Productivity Promotion Center Co.,Ltd. |
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Effective date of registration: 20240515 Address after: Building A 103, No. 207 Xingye Second Road, Fenghuang Community, Fuyong Street, Bao'an District, Shenzhen City, Guangdong Province, 518000 Patentee after: Shenzhen Tianyou Semiconductor Electronics Co.,Ltd. Country or region after: China Address before: 233000 Room 1402, Ziyang Building, Pearl Plaza, Huaishang District, Bengbu City, Anhui Province Patentee before: Bengbu HRABERO Intellectual Property Service Co.,Ltd. Country or region before: China |
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