CN110073470A - Semiconductor machining adhesive tape - Google Patents

Semiconductor machining adhesive tape Download PDF

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Publication number
CN110073470A
CN110073470A CN201880005072.1A CN201880005072A CN110073470A CN 110073470 A CN110073470 A CN 110073470A CN 201880005072 A CN201880005072 A CN 201880005072A CN 110073470 A CN110073470 A CN 110073470A
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CN
China
Prior art keywords
semiconductor
layer
adhesive tape
chip
methyl
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Granted
Application number
CN201880005072.1A
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CN110073470B (en
Inventor
内山具朗
五岛裕介
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Publication of CN110073470A publication Critical patent/CN110073470A/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Abstract

A kind of semiconductor machining adhesive tape, it is the adhesive tape being made of the adhesive phase of substrate and the single side for being set to the substrate, it is characterized in that, above-mentioned substrate is made of multilayered structure, at least 1 layer of the multilayered structure is the layer A containing the 80 above cyclic olefin polymers of mass %, also has the layer B containing linear low density polyethylene or high density polyethylene (HDPE) in addition to this layer of A.

Description

Semiconductor machining adhesive tape
Technical field
The present invention relates to semiconductor machining adhesive tapes, and specifically, be related to using when semiconductor wafer is processed partly leads Body processing adhesive tape more specifically is related to turning to chip suitable for the back side grinding monolithic by semiconductor wafer The semiconductor machining surface protection tape of the manufacturing method of semiconductor chip.
Background technique
In the manufacturing procedure of semiconductor wafer (hereinafter also referred to as chip), after wafer surface forms pattern, carry out Back surface of the wafer is ground, is ground to the grinding of the so-called back side, the grinding of specific thicknesses.At this point, in order to protect wafer surface, in crystalline substance Piece surface coating surface protective glue band, is in this state ground back surface of the wafer.As surface protection tape, propose It is provided on the plastic foils such as polyolefin and (such as is joined with the surface protection tape of acrylate copolymer adhesive phase as main component See patent document 1).
On the other hand, popularizing, to what is increased severely using USB storage as the capacity of the semiconductor memory of representative with IC card The miniature devices such as reply, smart phone or tablet computer are popularized, it is desirable that the further filming of chip.For example, for previous thick The chip that degree is 200 μm~350 μm or so, it is desirable that filming to 50 μm~100 μm of thickness or lower thickness.
In general, the chip for being formed with circuit pattern is thinning by the processing of back side grinding process.Film-form chip after grinding The bending that chip is easy to happen because of the contraction of silicon and circuit, the shrinking percentage difference of protective layer and adhesive tape (is hereinafter referred to stuck up It is bent).Chip gets over filming, and the rigidity of chip itself more reduces, therefore can generate following problems point: making the chip in device The warpage that transmission or processing can not carry out.
In addition, back side chip after grinding if its final thickness be 100 μm hereinafter, if chip strength reduction, can to omit Micro- impact or defect cracks for starting point, and yield rate is possible to decline.In addition, being split even if not generated in grinding overleaf Line, (hereinafter referred to cut) in process in subsequent chip singualtion also can mechanically be cut off by diamond blade, The case where thus leading to chip rupture there is also the defect (hereinafter referred to fragment) because generating from cutting line.
About the processing of above-mentioned thin film wafers, such as a kind of dividing method of chip is proposed in patent document 2, Overleaf pass through cutting formation in specified position (chip separation predetermined position) from wafer electric trackside before grinding and is greater than final make a reservation for Wafer thickness and be less than script wafer thickness depth slot after, by the back side be ground filming to the depth of slot more than, Back side grinding and chip are carried out simultaneously.
In addition, as method similar to above, such as also proposed a kind of laser processing in patent document 3, It carries out laser irradiation in chip separation predetermined position, forms modified layer in inner wafer instead of slot, the back side is ground Shi Yigai Property layer be starting point be split, chip.If using this method, since there is no previous slot, it is thus possible to make chip chamber away from From almost nil, more chips can be obtained by a wafer.In addition, there is no the cutting generated by diamond blade punchings It hits, thus fragment can also be eliminated.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2001-240842 bulletin
Patent document 2: Japanese Unexamined Patent Publication 11-40520 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2002-192370 bulletin
Summary of the invention
Problems to be solved by the invention
On the other hand, in the method recorded in above patent document 3, modified layer, thus chip are formd using laser Between distance be almost 0, if the external factor such as shearing force when the deformation of surface protection band or the back side are ground due tos, makes chip misplace, It can then lead to the problem of and be easy to contact with adjacent chip and be easy to crack from the part.
In addition, present inventor has performed further investigations, as a result, it has been found that, using by the multilayered structure institute structure with certain layer At substrate of the substrate as band in the case where, the mutual adaptation of layer for constituting multilayered structure is critically important, if the interlayer is closely sealed Property it is insufficient, then fissility reduces, or splitting occurs in the processing as the semiconductor wafer of adherend, leads to crystalline substance Piece is damaged.
Therefore, problem of the present invention is that solving the above problems, a kind of semiconductor machining adhesive tape is provided, which adds Even if work is ground to film in the back side grinding process of the processing of semiconductor wafer, especially silicon wafer etc. with adhesive tape, removing Property is also excellent, and interlayer excellent adhesion, and then can sufficiently inhibit the generation of bad chip.
Means for solving the problems
The above subject of the invention solves by the following means.
(1)
A kind of semiconductor machining adhesive tape, for the glue being made of the adhesive phase of substrate and the single side for being set to the substrate Band, which is characterized in that above-mentioned substrate is made of multilayered structure, and at least 1 layer of the multilayered structure is to contain the 80 above rings of mass % The layer A of shape olefin polymer also has the layer B containing linear low density polyethylene or high density polyethylene (HDPE) in addition to this layer of A.
(2)
Semiconductor machining adhesive tape as described in (1), which is characterized in that the density of above-mentioned linear low density polyethylene is 0.95g/cm3Below.
(3)
Semiconductor machining adhesive tape as described in (1) or (2), which is characterized in that above-mentioned linear low density polyethylene melts Body flow rate is 4.0g/10min or less.
(4)
Semiconductor machining adhesive tape as described in any one of (1)~(3), which is characterized in that above-mentioned linea low density is poly- Ethylene is metallocene PE.
(5)
Semiconductor machining adhesive tape as described in any one of (1)~(4), which is characterized in that it is used for semiconductor chip Manufacture, the manufacture of the semiconductor chip is ground by the back side of semiconductor wafer and turns to following semiconductor wafer monolithics Chip, the semiconductor wafer are to irradiate laser along the singualtion presumptive area of each chip and be formed with inside semiconductor wafer The semiconductor wafer of modified layer forms slotted semiconductor die by mechanical means along the singualtion presumptive area of each chip Piece.
The effect of invention
Even if semiconductor machining adhesive tape of the invention is ground at the back side of the processing of semiconductor wafer, especially silicon wafer etc. It cuts and is ground to film in process, fissility is also excellent, and interlayer excellent adhesion, and then can sufficiently inhibit bad chip It generates.
In addition, semiconductor machining of the invention is used to carry out chip by the back side grinding of semiconductor wafer with adhesive tape The manufacturing method of the semiconductor chip of singualtion, even if being thus ground to film, fissility is also excellent, and interlayer adaptation is excellent It is different, and then can sufficiently inhibit the generation of bad chip.
Above and other feature of the invention and advantage can suitably refer to attached drawing and be further clarified by following contents.
Detailed description of the invention
Fig. 1 is the schematic sectional view for schematically showing a mode of semiconductor machining adhesive tape of the invention.
Fig. 2 (a)~2 (c) be to the manufacturing procedure of the semiconductor wafer for using semiconductor machining adhesive tape of the invention into The schematic sectional view of row explanation.Fig. 2 (a) shows and peels and expose adhesive layer stripping film with adhesive tape from semiconductor machining Process, Fig. 2 (b) show the state that the projection in semiconductor wafer is fitted with semiconductor machining adhesive tape, and Fig. 2 (c) is shown pair The process that the back side of semiconductor wafer is ground.
Specific embodiment
[semiconductor machining adhesive tape]
Semiconductor machining adhesive tape of the invention is to be made of the adhesive phase of substrate and the single side for being set to the substrate Adhesive tape, above-mentioned substrate are made of multilayered structure, and at least 1 layer of the multilayered structure polymerize to contain the above cyclic olefin of 80 mass % The layer A of object also has the layer B containing linear low density polyethylene or high density polyethylene (HDPE) in addition to this layer of A.
Hereinafter, being illustrated to the preferred embodiment of semiconductor machining of the invention adhesive tape.
As shown in Figure 1, semiconductor machining of the invention is that adhesive phase 3 is laminated on substrate 2 with adhesive tape 1, two layers one Band made of body.In addition, semiconductor machining can also be further equipped with for protecting bonding with adhesive tape 1 on adhesive phase 3 The stripping film 4 of oxidant layer 3.Semiconductor machining of the invention adhesive tape 1 may be by substrate 2, adhesive phase 3 and stripping film 4 The mode that laminate is rolled into a roll.
(substrate 2)
The substrate 2 of semiconductor machining of the invention adhesive tape 1 is made of multilayered structure.At least 1 layer of the multilayered structure is Layer A containing cyclic olefin polymer (hereinafter referred to " COP ") also has in addition to this layer of A and contains linear low density polyethylene At least 1 layer as multilayered structure of the layer B of alkene or high density polyethylene (HDPE).
In this specification, COP refers to the addition polymerization of the ring-opening polymerization polymer or its hydrogen addition product, cyclic olefin of cyclic olefin Object also includes the addition copolymerization for the cyclic olefin and chain olefin for being referred to as cyclic olefin copolymer (hereinafter referred to " COC ") Object.
Cyclic olefin as monomer is cricoid alkene or alkynes, as long as can by ring-opening polymerisation or addition polymerization Form the compound of polymer.Carbon atom number is preferably 4~12.Cyclic olefin includes two ring type alkene, Jin Erke To include polycycle alkene more than monocyclic alkene and/or tricyclic.As monocyclic alkene, for example, cyclobutane, The cyclic rings olefines etc. that the carbon atom numbers such as cyclopentene, cycloheptene, cyclo-octene are 4~12.As two ring type alkene or tricyclic with On polycycle alkene, for example, dicyclopentadiene；2,3- dihydro dicyclopentadiene, methylene octane fluorenes, two The derivatives such as methylene octane naphthalene, two endo-methylene group cyclopentadiene naphthalenes, methylene octane cyclopentadiene naphthalene；6- ethyl eight Hydrogenated naphthalene etc. has the derivative of substituent group；The addition product of cyclopentadiene and tetrahydroindene etc., 3~4 aggressiveness of cyclopentadiene, drop ice Piece alkene and tetracyclododecane etc., preferably norbornene and tetracyclododecane.
In addition, chain olefin is the alkene or alkynes of chain, as long as being capable of shape by the addition polymerization with cyclic olefin At the compound of polymer.Carbon atom number is preferably 2~10, and more preferably 2~8, further preferably 2~4.It is specific and Speech, can enumerate ethylene, propylene, 1- butylene, isobutene, 1- amylene, 3- Methyl-1-pentene, 4-methyl-1-pentene, 1- hexene, Chain olefin class of the carbon atom numbers such as 1- octene 2~10 etc..These chain olefins can be used alone or by two or more combinations It uses, particularly preferred ethylene.
In above-mentioned layer A, the content of COP is 80 mass % or more, preferably 90 mass % or more.Upper limit value does not limit especially System is 100 mass % or less.It should be noted that the content of COP refers to the content of COC in the case that COP is COC.
As above-mentioned COP, specifically, indicating with trade name, Nippon Zeon's manufacture can be enumerated " Topas " etc. of " ZEONOR " and Polyplastics company manufacture.
In COP, the homopolymer of cyclic olefin is noncrystalline resin, has hard and crisp property, in molding slice or film When be also required to carry out high-temperature process.
On the other hand, COC is the copolymer of cyclic olefin and ethylene, thus has flexibility and ductility.In addition, passing through It adjusts polymerization ratio (content ratio), the COC with various characteristics can be obtained.
In the constituent of COC, ethylene component content is preferably the 30 mass % of mass %~40, more preferably 35 matter Measure the mass of %~40 %.If ethylene component content is very few, substrate is highly brittle, and semiconductor machining is possible to be broken with adhesive tape. In addition, the property of ethylene ingredient becomes strong, it is possible to be unable to get sufficient rigidity if ethylene component content is excessive.
For above-mentioned substrate 2, as the layer except the layer A containing COP, has good with the adaptation of layer A and contain The layer B of linear low density polyethylene (LDPE) (hereinafter referred to " LLDPE ") or high density polyethylene (HDPE) (hereinafter referred to " HDPE ").It needs It is noted that low density polyethylene (LDPE) (hereinafter referred to " LDPE ") is from being unable to get and the sufficient interlayer adaptation of layer A From the aspect of be undesirable.If interlayer adaptation is insufficient, fissility is insufficient, in the semiconductor die as adherend It is likely to occur splitting in the processing of piece, and makes wafer breakage.
LLDPE and HDPE can be the copolymer of ethylene and alpha-olefin.As alpha-olefin, preferably carbon atom number is 3~10 Range alpha-olefin, propylene, 1- butylene, 1- amylene, 1- hexene, 4-methyl-1-pentene, 1- heptene, 1- octene can be enumerated Deng.
In the case that LLDPE and HDPE is the copolymer of ethylene and alpha-olefin, in whole constituents of copolymer, second The content of alkene ingredient is preferably the 95 mass % of mass %~99, more preferably 96 mass of mass %~98 %.
In above-mentioned layer B, the content of LLDPE and HDPE are preferably 50 mass % or more, more preferably 80 mass % or more. Upper limit value is not particularly limited, and is 100 mass % or less.It should be noted that LLDPE and HDPE is being total to for ethylene and alpha-olefin In the case where polymers, the content of LLDPE and HDPE are the content of the copolymer of ethylene and alpha-olefin.
The density of LLDPE is preferably 0.95g/cm3Hereinafter, more preferably 0.94g/cm3Hereinafter, further preferably 0.93g/cm3Below.Lower limit value is actually 0.89g/cm3More than.
The melt flow rate (MFR) (MFR) of LLDPE be preferably 4.0g/10min hereinafter, more preferably 2.0g/10min hereinafter, Further preferably 1.0g/10min or less.Lower limit value is actually 0.5g/10min or more.
In addition, the density of HDPE is preferably 0.97g/cm3Hereinafter, more preferably 0.96g/cm3Below.Lower limit value is actually For 0.5g/cm3More than.
The MFR (melt flow rate) of HDPE is preferably 6.0g/10min hereinafter, more preferably 5.0g/10min or less. Lower limit value is actually 0.5g/10min or more.
MFR is 190 DEG C of temperature, the value under load 21.18N, density and MFR can by the method recorded in embodiment into Row measurement.
As LLDPE, from the adaptation aspect with the layer A containing COC, particularly preferred metallocene PE.
In this specification, " metallocene PE " refers to the ethylene polyolefin obtained using metallocene catalyst (hereafter In sometimes referred to as " metallocene catalyst ethylene polyolefin "), by making the mix monomer of ethylene or ethylene and alpha-olefin in cyclopentadienyl It is polymerize in the presence of metallic catalyst and is obtained.Therefore, the ethylene polyolefin obtained using metallocene catalyst includes The copolymer of polyethylene obtained from polymerization reaction and ethylene and alpha-olefin is carried out in the presence of a metallocene catalyst.
Metallocene catalyst be by metallocene, i.e. 2 substituted or unsubstituted cyclopentadienyl rings and by various transition gold Belong to the catalyst that the complex compound constituted is formed by transiting metal component and organic aluminium component, particularly aikyiaiurnirsoxan beta is constituted General designation.As transiting metal component, the metal, especially of periodic table of elements Section IV b race, V b race or Section VI b race can be enumerated It is zirconium or hafnium.As the transiting metal component in catalyst, it is however generally that, using usually by following formula
(Cp)2MR2
(in formula, Cp is substituted or unsubstituted cyclopentadienyl rings, and M is transition metal, and R is halogen atom or alkyl) institute's table The substance shown.
There are linear aikyiaiurnirsoxan beta and ring as aikyiaiurnirsoxan beta for the substance as obtained from reacting organo-aluminum compound with water Shape aikyiaiurnirsoxan beta.These aikyiaiurnirsoxan betas can be used alone, and can also be applied in combination with other organo-aluminiums.
Be in many bulletins using the ethylene or ethylene of metallocene catalyst and the polymerization of alpha-olefin it is well known, upper In the presence of stating metallocene catalyst, by organic solvent, in liquid monomer or the polymerization of vapor phase method and synthesizes, for benefit For the obtained substance of either method well known to these, the substance for meeting above-mentioned condition also can be used in mesh of the invention 's.
Whole constituents in the case where the copolymer of ethylene and alpha-olefin, as specific alpha-olefin and copolymer In the content of ethylene ingredient it is preferable to use the records of the copolymer of ethylene and alpha-olefin in above-mentioned LLDPE.
Metallocene catalyst ethylene polyolefin is characterized in that narrow molecular weight distribution, in the present invention, used as molecule The polydispersity (weight average molecular weight Mw/ number-average molecular weight Mn) for measuring the index of distribution is preferably 4.0 or less, more preferably 3.5 with Under, further preferably 3.2 substances below.It should be noted that in order to improve mouldability, further preferably use in polymerization or The substance of the branch of longer chain is imported in subsequent process.In addition, the usual density of metallocene catalyst ethylene polyolefin is 0.89g/cm3~0.95g/cm3, preferably 0.91g/cm3~0.93g/cm3Left and right, MFR are 0.1g/10 minutes~10g/10 points Clock, preferably 0.3g/10 minutes~5g/10 minutes or so.
There are metallocene catalyst ethylene polyolefins can be confirmed by the following method in layer B.That is, utilizing glass Layer B is cut into 100 μm of thickness as sample by glass, is layed in scanning electron microscope SEM, utilizes point for carrying out energy distribution Parser is measured generated fluorescent X-ray, and confirmation is equivalent to the presence at the peak of the energy of Zr (zirconium) or Hf (hafnium).
Composite can be used in metallocene catalyst ethylene polyolefin, can also select to use from commercially available product.As Commercially available product, the Umerit (registered trademark) for having Yu Buwanshan polyethylene company to manufacture, Sumitomo Chemical Co manufacture The Harmorex (registered trademark) and Kernel (registrar that EXCELLEN (registered trademark), Japan Polyethylene Corp. manufacture Mark) etc..
Above-mentioned LLDPE and HDPE is soft, therefore damping characteristics when grinding wafer are good.In addition, in terms of heat resistance It sets out, the fusing point of resin is preferably 60 DEG C or more.
Each resin can be used separately as the layer for constituting substrate 2, resin can also be combined with each other be blended and It uses.In addition, the layer for constituting substrate 2 can also contain as needed in the range of not influencing physical property other than above-mentioned resin There are the additives such as colorant, antioxidant, antistatic agent.
The thickness of above-mentioned substrate 2 is not particularly limited, and preferably 50 μm~200 μm, more preferably 80 μm~180 μm.
About the thickness of above-mentioned layer A, from the aspect of rigidity, preferably 20 μm~100 μm, more preferably 30 μm~60 μm.In addition, the thickness about above-mentioned layer B, from the aspect of flexibility, preferably 10 μm~100 μm, more preferably 20 μm~ 80μm。
In the case that substrate 2 is with 2 layers or more of layer A, 2 layers or more of layer B, " thickness of layer A ", " thickness of layer B " are Refer to the aggregate thickness of each layer.
Layer as substrate 2 is constituted, and is not limited especially as long as including at least the multilayered structure of each 1 layer of layer A and layer B Fixed, layer made of preferably layer A lamination adjacent with layer B is constituted, more preferable layer B1A/ layers of B of/layer2Successively 3 layers or more made of lamination Layer is constituted, further preferred layer B1A/ layers of B of/layer2Successively 3 layers of composition made of lamination.Herein, layer B1With layer B2Refer to above-mentioned layer B can be layer same to each other, or different layer.
It, can be suitably real in order to improve the adaptation with adhesive phase 3 on the surface of setting 3 side of adhesive phase of substrate 2 Apply the processing of sided corona treatment or setting priming coat etc..
The manufacturing method of above-mentioned substrate 2 is not particularly limited.It can be made by information such as extrusion, inflation, casting. Substrate 2 is made alternatively, it is also possible to be bonded the film being independently film-made with other films using bonding agent etc..
(adhesive phase 3)
As long as the adhesive phase 3 of semiconductor machining of the invention adhesive tape 1 is containing the layer of adhesive, for example, making It is formed with adhesive composition.The adhesive composition is not particularly limited, can enumerate it is common containing acrylic acid, rubber, The composition of the adhesives such as silicone.From weatherability, price etc. consideration, it is preferable to use acryloid cement.
As acryloid cement, can enumerate with (methyl) acrylate as constituent copolymer (hereafter In be known as " (methyl) acrylate copolymer ").In addition, other than (methyl) acrylate copolymer, after can also containing The curing agent stated.
In addition, in the present invention, (methyl) acrylic monomer include acrylic monomer and methacrylic monomers this The two.
As the constituent that is, (methyl) acrylate of above-mentioned (methyl) acrylate copolymer, for example, With methyl, ethyl, n-propyl, isopropyl, normal-butyl, tert-butyl, isobutyl group, amyl, isopentyl, hexyl, heptyl, hexamethylene Base, 2- ethylhexyl, octyl, iso-octyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, ten The carbon atom numbers such as tetraalkyl, stearyl, octadecyl and dodecyl are 30 or less, preferably carbon atom number be 4~18 it is straight The alkyl acrylate or alkyl methacrylate of chain or branched alkyl.These (methyl) alkyl acrylates can individually make With can also share two or more.
In the constituent of (methyl) acrylic acid series copolymer, the content of above-mentioned (methyl) acrylate component is preferably 80 mass % or more, more preferably 90 mass % or more, further preferably 95 mass of mass %~99.9 %.
Above-mentioned (methyl) acrylate copolymer also may include the constituent other than above-mentioned (methyl) acrylate.
As other constituents, for example, (methyl) acrylic acid, (methyl) carboxy ethyl acrylate, (methyl) third The acid such as carboxyl group-containing monomers, maleic anhydride or the itaconic anhydrides such as olefin(e) acid carboxylic pentyl ester, itaconic acid, maleic acid, fumaric acid and butenoic acid Anhydride monomer, (methyl) acrylic acid hydroxy alkyl ester (preferably above-mentioned (methyl) alkyl acrylate be optionally substituted by a hydroxyl group after substance) etc. contain Carboxylic monomer, styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide third The monomers containing sulfonic group, 2- hydroxylethyl such as alkyl sulfonic acid, (methyl) acrylic acid sulphur propyl ester and (methyl) propane sulfonic acid The phosphorous acid-based monomers such as acyl phosphate, (methyl) acrylamide, (methyl) acrylic acid N- methylol amide, (methyl) alkyl acrylate Base aminoalkyl ester (for example, dimethylaminoethyl methacrylate, t-butylaminoethyl methacrylate etc.), N- vinyl Pyrrolidones, acryloyl morpholine, vinyl acetate, styrene, acrylonitrile etc..These constituents can be used alone, can also It is two or more to share.
In the solid component of adhesive phase 3, the content of (methyl) acrylic acid series copolymer (is scaled and aftermentioned curing agent Or the content of the state before photopolymerizable compound reaction) it is preferably 80 mass % or more, more preferably 90 mass % or more, into One step is preferably 95 mass of mass %~99.9 %.
As curing agent, the curing agent recorded in Japanese Unexamined Patent Publication 2007-146104 bulletin can be used.Such as it can lift Bis- (N, the N- diglycidyl amino methyl) hexamethylenes of 1,3-, bis- (N, the N- diglycidyl amino methyl) first of 1,3- out Benzene, 1,3- bis- (N, N- diglycidyl amino methyl) benzene, N, in the molecules such as N, N, N '-four glycidyl group m-xylene diamine Epoxide, 2,4 toluene diisocyanate, 2,6- toluene di-isocyanate(TDI), 1,3- benzene two with 2 or more epoxy groups Have 2 in the molecules such as methylene diisocyanate, 1,4- xylene diisocyanate, diphenyl methane -4,4 '-diisocyanate Isocyanates based compound ,-three-β of the tetra methylol-'-aziridino propionic ester, trihydroxy methyl-three-of a above isocyanate group β-'-aziridino propionic ester ,-three-β of trimethylolpropane-'-aziridino propionic ester ,-three-β of trimethylolpropane-(2- methyl nitrogen Third piperidinyl) the aziridine based compound etc. with 2 or more '-aziridinos in the molecules such as propionic ester.The content root of curing agent It is adjusted according to desired bonding force, relative to above-mentioned 100 mass parts of (methyl) acrylate copolymer, preferably 0.01 mass parts~10 mass parts, more preferably 0.1 mass parts~5 mass parts.
Other than above-mentioned adhesive, adhesive phase 3 is further preferably by containing photopolymerizable compound and Photoepolymerizationinitiater initiater Radiation-curable adhesive constitute.By containing adhesive, photopolymerizable compound and Photoepolymerizationinitiater initiater, photograph can be passed through It penetrates radioactive ray (preferably ultraviolet light) and solidifies, reduce the bonding force of adhesive phase 3.As this photopolymerizable compound, such as Can be used recorded in Japanese Unexamined Patent Application 60-196956 bulletin and Japanese Unexamined Patent Application 60-223139 bulletin pass through illumination Penetrate and be capable of three-dimensional nettedization, in the molecule with the above optical polymerism carbon-to-carbon double bond of at least two harmonic component compound or The oligomer that they are polymerized.
About above-mentioned photopolymerizable compound, specifically, using trimethylolpropane tris (methyl) acrylate, season penta Tetrol two (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, two seasons penta Tetrol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, neopentyl glycol two (methyl) acrylic acid Ester or 1,4- butanediol two (methyl) acrylate, 1,6-hexylene glycols two (methyl) acrylate, two (first of (poly-) ethylene glycol Base) acrylate, (poly-) propylene glycol two (methyl) acrylate, epoxy (methyl) acrylate ((methyl) of epoxide Acrylic acid adduct), polyester (methyl) acrylate ((methyl) acrylic acid adduct of polyester) and carbamate (first Base) acrylate ((methyl) acrylic acid adduct of carbamate) etc..
As above-mentioned Photoepolymerizationinitiater initiater, Japanese Unexamined Patent Publication 2007-146104 bulletin or Japanese Unexamined Patent Publication 2004- can be used The Photoepolymerizationinitiater initiater recorded in No. 186429 bulletins.Specifically, cumene asioinether, isobutyl benzoin can be used Ether, benzophenone, michler's ketone, clopenthixal ketone, benzylmethylketal, Alpha-hydroxy cyclohexyl-phenyl ketone, 2- hyd roxymethyl phenyl Propane etc..
As above-mentioned radiation-curable adhesive, in addition to above-mentioned (methyl) acrylate copolymer and intramolecular have at least Other than the combination of the low molecular weight compound of 2 or more radiation polymerization carbon-to-carbon double bonds, it is also preferred that using following (methyl) propylene Sour based copolymer (hereinafter referred to " radiation polymerization (methyl) acrylic acid series copolymer "), for (methyl) acrylate As the copolymer of constituent, and the repetitive unit for constituting the copolymer has radiation polymerization carbon-to-carbon double bond.
Radiation polymerization (methyl) acrylic acid series copolymer is that have that radioactive ray, spy can be utilized in the molecule of copolymer It is not the copolymer for irradiating and carrying out the reactive group of polymerization reaction using ultraviolet light.
Such reactive group is ethylenically unsaturated groups, i.e. with carbon-to-carbon double bond (ethylenic bond unsaturated bond) Group can enumerate vinyl, allyl, styryl, (methyl) acryloxy, (methyl) Acryloyl amino etc..
Above-mentioned radiation polymerization (methyl) acrylic acid series copolymer is not particularly limited, for example, making with function (methyl) acrylic acid series copolymer of group a with the functional group b and radiation polymerization carbon-to-carbon that can be reacted with functional group a (methyl) propylene obtained from compound (hereinafter referred to " the radiation polymerization compound with functional group b ") reaction of double bond Sour based copolymer.
As above-mentioned (methyl) acrylic acid series copolymer with carbon-to-carbon double bond, for example, and Japanese Unexamined Patent Publication The same material of substance recorded in numbered paragraphs [0036]~[0055] of 2014-192204 bulletin.
In the above-mentioned radiation polymerization compound with functional group b, functional group b can enumerate carboxyl, hydroxyl, amino, ring Shape anhydride group, epoxy group, isocyanate group etc..As the specific radiation polymerization compound with functional group b, such as can be with Enumerate acrylic acid, methacrylic acid, cinnamic acid, itaconic acid, fumaric acid, phthalic acid, 2- hydroxyalkyl acrylates class, first Base acrylic acid 2- hydroxy alkyl esters, diethylene glycol monoacrylate class, ethylene glycol methacrylate class, N- methylol propylene Amide, N- methylol methacrylamide, allyl alcohol, acrylic acid N- alkyl amino ethyl ester class, methacrylic acid N- alkyl amino Ethyl ester class, acrylic amide, methacryl amine, maleic anhydride, itaconic anhydride, fumaric acid anhydride, phthalic anhydride, propylene Acid glycidyl ester, glycidyl methacrylate, allyl glycidyl ether, using with hydroxy or carboxy and radiation The monomer of polymerism carbon-to-carbon double bond obtains a part of urethane of the isocyanate group of polyisocyanate compound Substance etc..
In above-mentioned (methyl) acrylic acid series copolymer with functional group a and the above-mentioned radiation polymerization with functional group b In the reaction of compound, by the functional group of remained unreacted, acid value and hydroxyl value etc. can be suitably set.
Above-mentioned radiation polymerization (methyl) acrylic acid series copolymer can be and the progress polymerisation in solution in various solvents It obtains.As organic solvent when being carried out with polymerisation in solution, can be used ketone system, ester system, alcohol system, aromatic system it is organic molten Agent.It is preferable to use the good solvent of usually acrylic acid series polymeric compounds and solvent that boiling point is 60 DEG C~120 DEG C.It can be used for example Toluene, ethyl acetate, isopropanol, benzene, methyl cellosolve, ethyl cellosolve, acetone, methyl ethyl ketone etc..Cause as polymerization α, the free radical of organic peroxides systems such as two system of the azos such as α '-azodiisobutyronitrile, benzoyl peroxide etc. can be used in agent Initiator.At this point, can be obtained with catalysts, polymerization inhibitor by adjusting polymerization temperature and polymerization time as needed The copolymer of desired molecular weight.It should be noted that synthetic method is not limited to polymerisation in solution, or ontology is poly- The other methods such as conjunction, suspension polymerisation.
In addition to this, the adhesive composition for constituting adhesive phase 3 can according to need containing release agent, tackifiers, glue Close regulator, surfactant etc. or other modifying agent etc..Alternatively, it is also possible to contain inorganic compound filler.
Adhesive phase 3 can be transferred to substrate 2 by the way that adhesive composition to be applied on stripping film 4 and make it dry And it is formed.In the present invention, the thickness of adhesive phase 3 is preferably 10 μm~60 μm, more preferably 20 μm~50 μm.If blocked up, Because in excessive closely sealed, on 5 surface of semiconductor wafer the protrusion 51 (referring to Fig. 2) to semiconductor wafer 5 (referring to Fig. 2) surface Insertion, after the semiconductor machining removing of adhesive tape 1, it is possible to generate residue glue on 5 surface of semiconductor wafer.By on above-mentioned Limit value is hereinafter, be able to suppress the excessive closely sealed of adhesive.If excessively thin, adhesive phase 3 can not follow 5 surface of semiconductor wafer Protrusion 51, it is possible to cause the grinding water comprising silicon grindstone dust from the gap of semiconductor machining adhesive tape 1 and semiconductor wafer 5 into Enter and pollute the circuit face of semiconductor wafer 5, cause so-called seepage flow (seepage) etc..
(stripping film 4)
Stripping film 4 is also referred to as partition or peeling layer, release liner, in order to protect radiation-curable adhesive layer, in addition It is configured as needed to keep radiation-curable adhesive layer smooth.As the constituent material of stripping film 4, can enumerate The synthetic resin films such as polyethylene, polypropylene, polyethylene terephthalate or paper etc..In order to improve the stripping from adhesive phase 3 From property, it can according to need and the lift-off processings such as silicone-treated, chain alkyl processing, fluorine processing are implemented to the surface of stripping film 4.Separately Outside, as needed, antiultraviolet processing also can be implemented because of the reaction caused by ambient ultraviolet line in adhesive phase 3 in order to prevent. The thickness of stripping film 4 is usually 10 μm~50 μm, preferably 25 μm~38 μm.
[manufacturing method of semiconductor devices]
Semiconductor machining of the invention is preferred for the manufacture of following semiconductor chips, the system of the semiconductor chip with adhesive tape Making following semiconductor wafer singualtions (segmentation) through the grinding of the back side of semiconductor wafer is chip, which is The semiconductor wafer of modified layer is formed with inside semiconductor wafer along the singualtion presumptive area irradiation laser of each chip (hereinafter referred to " semiconductor wafer A ") or along each chip singualtion presumptive area formed by mechanical means it is slotted Semiconductor wafer (hereinafter referred to " semiconductor wafer B ").
Herein, " back side of semiconductor wafer " refers to that semiconductor wafer is formed with the electricity of semiconductor element relative to its surface The pattern plane on road etc. is located at the face of opposite side.Specifically, pattern plane refers to modified layer forming face in semiconductor wafer A, half Slot forming face in conductor chip B.
" the singualtion presumptive area of each chip " refers to the scribing line of chip.
In addition, " monolithic turns to chip " refers to the state for turning to semiconductor chip from semiconductor wafer monolithic, including through list The semiconductor chip of piece is fitted in the state on semiconductor machining adhesive tape of the invention.
Semiconductor wafer A is to irradiate laser along the singualtion presumptive area of each chip and formed inside semiconductor wafer There is the semiconductor wafer of modified layer.By laser irradiation, thickness T is pre-formed in semiconductor wafer 5AModified layer, thus exist When the back side grinding of semiconductor wafer later, according to semiconductor wafer 5 and above-mentioned thickness TAIt is identical or be thinner than above-mentioned thickness Spend TAMode be ground, so as to carry out the filming of semiconductor wafer 5 simultaneously and to the singualtion of semiconductor chip. Thickness TAIt is not particularly limited as long as the thickness for the semiconductor wafer being less than before the grinding of the back side, but actually more final than chip Thickness is 20 μm big~and 30 μm or so.
Which is to cut stealth and first cut the mode merged, also referred to as copes with the chip monolithic of narrow scribe widths Change mode.According to which, using stress the modified layer of silicon (semiconductor wafer) rived in back surface of the wafer grinding and Singualtion, therefore kerf width is zero, chip high income, bending strength also improves.
Semiconductor wafer B is to form slotted semiconductor die by mechanical means along the singualtion presumptive area of each chip Piece.By mechanical means (such as saw blade), thickness T is pre-formed in semiconductor wafer 5BSlot, thus in partly leading later When the back side grinding of body chip, according to semiconductor wafer 5 and above-mentioned thickness TBIt is identical or be thinner than above-mentioned thickness TBMode into Row grinding, so as to carry out the filming of semiconductor wafer 5 simultaneously and to the singualtion of semiconductor chip.Thickness TBAs long as small The thickness of semiconductor wafer before the grinding of the back side is just not particularly limited, but actually it is 20 μm bigger than the final thickness of chip~ 30 μm or so.
Which is referred to as DBG and (first cuts) mode.According to which, the mutual interval of chip is that notch (is also referred to as drawn Line, Cutting Road) width narrowization it is limited, but chip bending strength improve, be able to suppress the breakage of chip.
Referring to Fig. 2, the manufacturing method for the above-mentioned semiconductor chip for using semiconductor machining of the invention adhesive tape (is partly led The processing method of body chip) it is illustrated.
It is peeled about semiconductor machining of the invention adhesive tape 1 in the case where having stripping film 4 on adhesive phase 3 Expose adhesive layer 3 from film 4, using semiconductor machining made of substrate 2,3 lamination of adhesive phase with adhesive tape 1 (referring to Fig. 2 (a)).Semiconductor machining of the invention is pasted in such a way that the protrusion of semiconductor wafer 5 51 is contacted with adhesive phase 3 with adhesive tape 1 Together in semiconductor wafer 5, obtaining the semiconductor wafer 5 that protrusion 51 is coated by semiconductor machining of the invention with adhesive tape 1, (reference is schemed 2(b)).Herein, it may make up the part of semiconductor chip when protrusion 51 refers to singualtion in the semiconductor wafer, usually there is shape At the pattern plane of the circuit for having semiconductor element etc..
It is ground using the back side of the grinder 7 to the semiconductor wafer 5, thus by 5 filming (reference of semiconductor wafer Fig. 2 (c)), final monolithic turns to the semiconductor chip with pattern plane.
Semiconductor chip through singualtion in the state of being adsorbed on scratch diskette using release band by being removed etc. Conventional method is picked from semiconductor machining adhesive tape 1 of the invention.At this point, in the feelings that adhesive phase 3 is ultraviolet hardening Under condition, reduce the bonding force of adhesive phase 3 by ultraviolet light irradiation, thus, it is possible to easily by adhesive phase 3 from through monolithic The semiconductor chip of change is removed.
Embodiment
Hereinafter, based on embodiment, the present invention will be described in more detail, but the present invention is not limited to these.
It should be noted that the density of resin used below is measured according to JIS K7112 respectively, in addition, resin MFR respectively according to the value under 190 DEG C of JIS K7210 measuring temperature, load 21.18N.
<embodiment 1>
1. the preparation of adhesive composition
For using as acrylate monomer 80 mass parts of acrylic acid-2-ethyl caproite, as third with functional group 20 mass parts of acrylic acid -2- hydroxyl ethyl ester of olefin(e) acid ester monomer, (methyl) third that 1 mass parts of methyl methacrylate are constituent Olefin(e) acid copolymer makes the methyl-prop in molecule with ultraviolet polymerizing carbon-to-carbon double bond and the isocyanate group reacted with hydroxyl 3 mass parts of olefin(e) acid -2- isocyanato ethyl are reacted, and (methyl) third with ultraviolet polymerizing carbon-to-carbon double bond is obtained Olefin(e) acid based copolymer.Relative to 00 mass parts of copolymer 1, isocyanate compound (the poly- ammonia of Japan as crosslinking agent is mixed Ester industrial group manufacture, trade name: Coronate L) 0.9 mass parts, Photoepolymerizationinitiater initiater (BASF AG manufacture, trade name: Irgacure 184) 5.0 mass parts, obtain the adhesive composition of ultraviolet hardening.
2. the production of substrate
Be utilized extrusion molding production, being successively laminated with LLDPE, (linear low density polyethylene, metallocene catalyst are poly- Close object) 25 μm, 50 μm of COP (cyclic olefin polymer), LLDPE25 μm of 100 μm of total thickness of substrate.Herein, the ethylene of COP contains Amount is 30 mass %, MFR 0.8g/10min.In addition, the MFR of LLDPE is 2.5g/10min, density 0.925g/cm3。
3. the production of semiconductor machining adhesive tape
In the way of after drying with a thickness of 30 μm, above-mentioned adhesive composition is applied to and implements demoulding processing On PET film (25 μm of thickness), be dried and after making the ethyl acetate evaporation as solvent, be bonded with substrate and by adhesive turn Print obtains the semiconductor machining adhesive tape of embodiment 1 to substrate side.As shown in Figure 1, the semiconductor machining with adhesive tape 1 have according to The secondary structure for being laminated with base material film 2, adhesive phase 3, stripping film 4.In addition, base material film 2 has from 3 side of adhesive phase successively lamination There is a layer B1, layer A, layer B2Structure.
<embodiment 2>
In addition to LLDPE is changed to MFR be 4g/10min LLDPE (metallocene catalyst polymerisation object) other than, using with The identical method of embodiment 1 obtains the semiconductor machining adhesive tape of embodiment 2.
<embodiment 3>
In addition to the thickness of substrate is changed to LLDPE35 μm, COP80 μm, other than 150 μm of total thickness of LLDPE35 μm, utilize Method same as Example 2 obtains the semiconductor machining adhesive tape of embodiment 3.
<embodiment 4>
In addition to by LLDPE be changed to MFR be 7.0g/10min, density 0.964g/cm3HDPE, COP is changed to second Alkene content is to obtain embodiment 4 using method same as Example 1 other than the COP that 35 mass %, MFR are 2.0g/10min Semiconductor machining adhesive tape.
<embodiment 5>
In addition to by LLDPE be changed to MFR be 2.0g/10min, density 0.918g/cm3LLDPE (metallocene catalyst Polymer) other than, the semiconductor machining adhesive tape of embodiment 5 is obtained using method same as Example 1.
<embodiment 6>
In addition to by LLDPE be changed to MFR be 4.0g/10min, density 0.944g/cm3LLDPE, by the thickness of substrate Be changed to LLDPE16 μm, COP48 μm, other than 80 μm of total thickness of LLDPE16 μm, obtain reality using method same as Example 1 Apply the semiconductor machining adhesive tape of example 6.
<comparative example 1>
In addition to by LLDPE be changed to MFR be 3.1g/10min, density 0.925g/cm3LDPE other than, using with reality It applies the identical method of example 1 and obtains the semiconductor machining adhesive tape of comparative example 1.
<comparative example 2>
Other than COP to be changed to ethylene contents and is the COP that 35 mass %, MFR are 2.0g/10min, using compared with The identical method of example 1 obtains the semiconductor machining adhesive tape of comparative example 2.
<comparative example 3>
In addition to by LLDPE be changed to MFR be 2.5g/10min, density 0.928g/cm3Ethylene vinyl acetate copolymerization Other than object, the semiconductor machining adhesive tape of comparative example 3 is obtained using method identical with comparative example 1.
Obtained semiconductor machining is conducted the following evaluation with adhesive tape.
[1. interlayer adaptation]
Use composition layer B1With layer B2Resin and constitute layer A resin, make long 1300mm, wide 25mm, 100 μ of thickness respectively The film of m.The region of 25mm × 10mm of two kinds of made films is overlapped, is thermally compressed 5 seconds at 220 DEG C, joint portion is formed.Benefit With Strograph (Toyo Seiki company manufactures), removing when measurement is with speed 300mm/min, 180 ° of peel angle removings is strong Degree.Peel strength is evaluated as " 〇 " when being 5N or more, is evaluated as "×" when less than 5N.
[2. heat resistance]
For 8 inches of false pieces (dummy wafer) of smooth surface, fitting embodiment, the semiconductor machining of comparative example are used The adhesive phase side of each band of adhesive tape, the grinder DGP8760 (trade name) manufactured using enlightening Cisco System Co., extremely by grinding wafer 50 μm of thickness.After grinding, it is evaluated as band side and contact heater plate when appearance is unchanged using heater plate to 70 DEG C " 〇 ", is evaluated as "×" when changing.
[3. fissility]
For 8 inches of false piece, the semiconductor machining of above-mentioned production is bonded with adhesive tape (hereinafter referred to adhesive tape), uses enlightening The grinder DGP8760 (trade name) of Cisco System Co.'s manufacture, by grinding wafer to 50 μm of thickness.After grinding, high-pressure sodium lamp is used Irradiating accumulative amount of radiation from adhesive tape side is 500mJ/cm2Ultraviolet light, make adhesive phase solidify and make bonding force reduce after, make It is adsorbed on scratch diskette in the state that adhesive tape is face-up, is removed adhesive tape using release band (manufacture of Dong electrician company).In crystalline substance The interface of piece and adhesive phase is evaluated as " 〇 " when removing has occurred, and can not remove or be removed at position in addition to this When be evaluated as "×".
[4. crackle]
It is long 10mm × wide 12mm for the size of chip and is formed with 75 μm of depth of slot along singualtion presumptive area 8 inches of false pieces (725 μm of thickness), be bonded the semiconductor machining of above-mentioned production with adhesive tape (hereinafter forming slotted surface side Referred to as adhesive tape), the grinder DGP8760 (trade name) manufactured using enlightening Cisco System Co., by grinding wafer to 50 μm of thickness, by core Piece singualtion.After grinding, irradiating accumulative amount of radiation from adhesive tape side using high-pressure sodium lamp is 500mJ/cm2Ultraviolet light, make to bond Oxidant layer solidify and make bonding force reduce after, by each chip from adhesive tape remove, utilize the crackle in micro- sem observation die terminals portion.It generates The chip-count of crackle is evaluated as " 〇 " when being 10 or less, is evaluated as " △ " when being 10~20, for 20 or more news commentaries Valence is "×".
[table 1]
According to above-mentioned table 1, the Examples 1 to 6 as the adhesive tape of semiconductor machining specified in the present invention shows heat-resisting Property, the good result of inhibition that generates of fissility, interlayer adaptation and crackle.In contrast, the semiconductor of comparative example 1 and 2 The fissility and interlayer adaptation of processing adhesive tape are poor, and the interlayer adaptation of the semiconductor machining adhesive tape of comparative example 3 is poor.
In conjunction with embodiments thereof, the present invention is described, but applicants contemplate that, as long as no specifying, then originally Invention is not limited in any details of explanation, should not violate spirit and range shown in the appended claims In the case where carry out wide in range explanation.
This application claims carry out the Japanese Patent Application 2017-046435's of patent submission in Japan based on March 10th, 2017 Priority is introduced by it with reference to this and using its content as a part of the record of this specification.
Symbol description
1 semiconductor machining adhesive tape
2 substrates
3 adhesive phases
4 stripping films
5 semiconductor wafers
7 grinders
51 protrusions

Claims (5)

1. a kind of semiconductor machining adhesive tape, for the glue being made of the adhesive phase of substrate and the single side for being set to the substrate Band, which is characterized in that the substrate is made of multilayered structure, and at least 1 layer of the multilayered structure is to contain the 80 above rings of mass % The layer A of shape olefin polymer also has the layer B containing linear low density polyethylene or high density polyethylene (HDPE) in addition to this layer of A.
2. semiconductor machining adhesive tape as described in claim 1, which is characterized in that the density of the linear low density polyethylene For 0.95g/cm3Below.
3. semiconductor machining adhesive tape as claimed in claim 1 or 2, which is characterized in that the linear low density polyethylene Melt flow rate (MFR) is 4.0g/10min or less.
4. semiconductor machining adhesive tape according to any one of claims 1 to 3, which is characterized in that the linea low density Polyethylene is metallocene PE.
5. semiconductor machining adhesive tape as described in any one of claims 1 to 4, which is characterized in that it is used for semiconductor core The manufacture of the manufacture of piece, the semiconductor chip is ground by the back side of semiconductor wafer by following semiconductor wafer singualtions For chip, which is to irradiate laser along the singualtion presumptive area of each chip and formed inside semiconductor wafer There is the semiconductor wafer of modified layer or slotted semiconductor is formed by mechanical means along the singualtion presumptive area of each chip Chip.
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