CN110071044A - The preparation method and field-effect tube of field-effect tube - Google Patents
The preparation method and field-effect tube of field-effect tube Download PDFInfo
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- CN110071044A CN110071044A CN201810064615.9A CN201810064615A CN110071044A CN 110071044 A CN110071044 A CN 110071044A CN 201810064615 A CN201810064615 A CN 201810064615A CN 110071044 A CN110071044 A CN 110071044A
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- 238000000034 method Methods 0.000 claims abstract description 50
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- 239000010409 thin film Substances 0.000 claims description 24
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
Abstract
The present invention relates to a kind of field-effect tube preparation method and field-effect tube, this method comprises: silicon carbide substrates are heated to preset temperature；The carbon atom in the silicon carbide substrates is reconstructed after silicon atom distillation for making the silicon atom in the silicon carbide substrates distil in the preset temperature, to form one layer of graphene film on the surface of the silicon carbide substrates；Source electrode, drain and gate are deposited on the graphene film.Field-effect tube made by the above method can obtain high-quality graphene, improve carrier mobility, reduce noise, realize Terahertz frequency range transmission.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to the preparation method and field-effect of a kind of field-effect tube
Pipe.
Background technique
With the fast development of femtosecond laser technology and semiconductor technology, the Terahertz of high spatial resolution and angular resolution
Radar Technology has become the novel strategic field that Main Developed Countries are competed for, and the low-noise performance of high standard is Terahertz thunder
Up to the crucial research point of system, and field-effect tube is the key components of low-noise amplifier in Terahertz radar system.With
The raising of working efficiency, the development of conventional transistor just approaching the physics limit of Moore's Law, it is intrinsic due to material itself
Property and chip size reduce, and energy density increases the requirement that bring effect of noise is not able to satisfy development in science and technology.And
New Two Dimensional nano material of the graphene as plane benzene ring structure, with superelevation thermal conductivity, low resistivity and higher load
Transport factor is flowed, and there is many advantages, such as good compatibility with carbon material, it has been widely applied to field-effect tube
In the middle.
In traditional technology, through frequently with based on chemical vapor deposition (Chemical Vapor Deposition, abbreviation
CVD) boron nitride (h-BN) base graphene field-effect tube of method preparation, but CVD method needs during preparing graphene
It is vapor-deposited, is transferred graphene on substrate with the process in deposition.
But the above method often introduces impurity in transfer process, so that the graphene ultimately produced is difficult to
Good Ohmic contact is carried out with substrate, the carrier mobility of field-effect tube is lower.
Summary of the invention
Based on this, it is necessary to when for making field-effect tube using the method for traditional technology, because in transfer graphene to lining
The technical problem that impurity causes field-effect tube carrier generated lower is introduced when bottom, and a kind of preparation side of field-effect tube is provided
Method and field-effect tube.
In a first aspect, the embodiment of the present invention provides a kind of field-effect tube preparation method, comprising:
Silicon carbide substrates are heated to preset temperature；The preset temperature is used to make the silicon atom in the silicon carbide substrates
Distillation, and the carbon atom in the silicon carbide substrates is reconstructed after silicon atom distillation, in the silicon carbide
The surface of substrate forms one layer of graphene film；
Source electrode, drain and gate are deposited on the graphene film.
Field-effect tube preparation method provided by above-mentioned first aspect, by the way that silicon carbide substrates are heated to preset temperature,
So that the silicon atom in silicon carbide substrates distils, and the carbon atom in silicon carbide substrates is carried out after silicon atom distillation
Reconstruct, to form one layer of graphene film on the surface of silicon carbide substrates；Source electrode, drain electrode are deposited on the graphene film later
And grid, obtain field-effect tube.Silicon carbide substrates can directly be heated to pre- by this method in such a way that high temperature epitaxy is grown
If temperature, so that the carbon silicon bonds of substrate surface are broken, silicon atom is prior to carbon atom distillation and from surface desorption, so that surface
The carbon atom of enrichment is reconstructed by way of self assembly, to form one layer of graphene film in silicon carbide substrate surface, this
The graphene of sample preparation does not need to be transferred on substrate by vapor deposition, so that any additional impurity will not be introduced, therefore,
Its graphene film that can obtain high quality, the graphene film can carry out good Ohmic contact with substrate, thus big
The carrier mobility for improving field-effect tube greatly, realizes the transmission of Terahertz frequency range.
It is described in one of the embodiments, that source electrode, drain and gate are deposited on graphene film, comprising:
Source electrode and drain electrode is deposited respectively in the upper surface of the graphene film；
Hydrogenation treatment is carried out to the graphene film between the source electrode and the drain electrode, it is thin to obtain hydrogenation graphene
Film；
Gate dielectric layer is deposited on the hydrogenation graphene film, and deposits the grid on the gate dielectric layer.
It is described in one of the embodiments, to deposit source electrode and drain electrode respectively in the upper surface of the graphene film, it wraps
It includes:
Source electrode and drain electrode is deposited respectively at the predeterminable area at the graphene film both ends.
In one of the embodiments, it is described deposited respectively at the predeterminable area at the graphene film both ends source electrode and
Drain electrode, comprising:
One layer of nickel is deposited, respectively at the predeterminable area at the graphene film both ends to form source electrode and drain electrode.
In one of the embodiments, it is described deposited respectively at the predeterminable area at the graphene film both ends source electrode and
Drain electrode, comprising:
One layer of gold is deposited, respectively at the predeterminable area at the graphene film both ends to form one layer of gold thin film；
One layer of titanium is deposited on the surface of the gold thin film, to form source electrode and drain electrode.
In above-described embodiment, after having prepared graphene film, then sink respectively in the upper surface of the graphene film
Product source electrode and drain electrode continues to carry out hydrogenation treatment to the graphene film between source electrode and drain electrode later, to obtain hydrogenation graphite
Alkene film improves the hydrophily of graphene film, improves contact of the channel layer with gate dielectric layer, so be conducive to gate medium
The fitting of layer and hydrogenation graphene film, reduces the influence of noise caused by the electrons spread of random motion in field-effect tube,
Carrier mobility is greatly enhanced, the transmission of terahertz wave band is realized.
Source electrode, drain and gate are deposited on the graphene film in one of the embodiments, comprising:
Photoresist is coated in the upper surface of the graphene film, to obtain photoresist layer；
Photoetching is carried out to the partial region of the photoresist layer, obtains hydrogenation window, the graphene film it is to be hydrogenated
Naked state is presented by the hydrogenation window in region；
Remaining photoresist is removed on being formed by structure；
Deposit the source electrode and drain electrode respectively on being formed by structure；
Hydrogenation treatment is carried out to the region to be hydrogenated of the graphene film, obtains hydrogenation graphene film, and described
Gate dielectric layer is deposited on hydrogenation graphene film, and deposits the grid on the gate dielectric layer.
It is described in one of the embodiments, to deposit the source electrode and drain electrode respectively on being formed by structure, comprising:
Source electrode and drain electrode is deposited respectively at the both ends of the hydrogenation window.
Source electrode and drain electrode is deposited respectively at the both ends of the hydrogenation window in one of the embodiments, comprising:
One layer of nickel is deposited respectively at the predeterminable area at the both ends of the hydrogenation window, to form source electrode and drain electrode.
Source electrode and drain electrode is deposited respectively at the both ends of the hydrogenation window in one of the embodiments, comprising:
One layer of gold is deposited respectively at the predeterminable area at the hydrogenation window both ends, to form one layer of gold thin film；
One layer of titanium is deposited on the surface of the gold thin film, to form source electrode and drain electrode.
The preset temperature is 1400 DEG C in one of the embodiments,.
In above-described embodiment, by coating photoresist to above-mentioned graphene film surface, so that being exposed after exposure development
Hydrogenate window, then formation hydrogenation window both ends deposit source electrode and drain electrode, and to the region to be hydrogenated of graphene film into
Row hydrogenation treatment improves the hydrophily of graphene film, improves contact of the channel layer with gate dielectric layer, so be conducive to grid
The fitting of dielectric layer and hydrogenation graphene film, reduces the shadow of noise caused by the electrons spread of random motion in field-effect tube
It rings, improves the mobility of carrier, realize the transmission of terahertz wave band.
Second aspect, the present invention provide a kind of field-effect tube, comprising: silicon carbide substrates are located at the silicon carbide substrates table
The graphene film in face, and the grid positioned at the graphene film surface, source electrode and drain electrode；
Wherein, the graphene film is to be formed by after the silicon carbide substrates are heated to preset temperature；It is described pre-
If temperature makes the carbon atom in the silicon carbide substrates described for making the silicon atom in the silicon carbide substrates distil
It is reconstructed after silicon atom distillation, to form one layer of graphene film on the surface of the silicon carbide substrates.
The graphene film includes the hydrogenation graphene film after hydrogenation treatment in one of the embodiments, described
The upper surface of the hydrogenation graphene film is arranged in grid, and has grid between the grid and the hydrogenation graphene film
Dielectric layer.
The gate dielectric layer is aluminium oxide Al in one of the embodiments,2O3Or hafnium oxide HfO2。
The source electrode, grid and drain electrode are the electrode of nickel material in one of the embodiments,；
Alternatively,
The source electrode, grid and drain electrode are the electrode of titanium mixed materials.
The beneficial effect of above-mentioned second aspect may refer to any embodiment of above-mentioned first aspect and first aspect
Beneficial effect, details are not described herein.
Detailed description of the invention
Fig. 1 is the flow diagram for the field-effect tube preparation method that one embodiment provides；
The structural schematic diagram of graphene film in the field-effect tube that Fig. 1 a provides for one embodiment；
Fig. 2 is the flow diagram for the field-effect tube preparation method that another embodiment provides；
Fig. 2 a is the structural schematic diagram for the A that another embodiment provides；
Fig. 2 b is the structural schematic diagram for the deposition source electrode and drain electrode that another embodiment provides；
Fig. 2 c is the structural schematic diagram for the B that another embodiment provides；
Fig. 2 d is the structural schematic diagram that another embodiment provides；
Fig. 3 is the flow diagram for the field-effect tube preparation method that another embodiment provides；
Fig. 3 a is the structural schematic diagram for the C that another embodiment provides；
Fig. 3 b is the structural schematic diagram for the D that another embodiment provides；
Fig. 3 c is the structural schematic diagram for the deposition source electrode and drain electrode that another embodiment provides；
Fig. 3 d is the structural schematic diagram that another embodiment provides；
Fig. 3 e is the structural schematic diagram that another embodiment provides；
Description of symbols:
10: silicon carbide substrates；11: graphene film；12: photoresist layer；
13: source electrode；14: drain electrode；15: hydrogenation graphene film；
16: gate dielectric layer；17: grid；18: gold thin film；
19: titanium film；20: hydrogenation window.
Specific embodiment
With the development of integrated circuit technique, field-effect tube is also more and more extensive in the application of integrated circuit fields, can
For the key component of low-noise amplifier in radar-probing system, the field effect with hyperfrequency, ultrafast transmitting is developed
The target that always researchers are pursued should be managed, graphene has superelevation thermal conductivity, carrier mobility, Er Qieyu
Carbon material has good compatibility, and good electrical and thermal conductivity performance makes graphene field effect pipe in low-noise amplifier field
With huge application value.
Optionally, the executing subject of embodiment of the present invention method can be the equipment for making field-effect tube or be
System, the equipment or system can achieve the purpose that make field-effect tube by executing following embodiment of the method.
In order to which the objects, technical solutions and advantages of the embodiment of the present invention are more clearly understood, simultaneously by following embodiments
In conjunction with attached drawing, technical solution in the embodiment of the present invention is described in further details.It should be appreciated that described herein specific
Embodiment only to explain the present invention, is not intended to limit the present invention.These specific embodiments can be combined with each other below,
The same or similar concept or process may be repeated no more in certain embodiments.
Fig. 1 is the field-effect tube preparation method flow diagram that one embodiment provides, as shown in Figure 1, the field-effect tube
Preparation method includes:
Silicon carbide substrates are heated to preset temperature by S101；The preset temperature is for making in the silicon carbide substrates
Silicon atom distillation, and the carbon atom in the silicon carbide substrates is reconstructed after silicon atom distillation, described
The surface of silicon carbide substrates forms one layer of graphene film.
Specifically, the present embodiment be using single-crystal silicon carbide as substrate, compared with traditional silicon substrate power electronic devices, with
Silicon carbide is that the power device of substrate can substantially reduce power consumption, saves electric power, and silicon carbide can be in the high temperature more than 200 DEG C
Work steady in a long-term down, compared to silicon, silicon carbide scheme can largely mitigate cooling burden, realize the miniaturization and one of system
Body.In addition, output power is 10 times of GaAs device or more using silicon carbide as the microwave device of substrate, work
Frequency reaches 100GHZ or more, can significantly improve the overall performance of radar, communication, electronic countermeasure and intellectual weapon and reliable
Property, and promoted till now using its ranging of the radar system of microwave device of silicon carbide substrates by 80 original~100km
300km or more.
The present embodiment it is above-mentioned to make graphene film in silicon carbide substrates when, be under high temperature environment, by hydrogen first
Gas carries out planarizing process to silicon carbide substrate surface to the etching effect of silicon carbide according to it as protective gas, forms it into
The surface of step array pattern with atomic-level flatness；Then, optionally, silicon carbide can be served as a contrast under vacuum conditions
Bottom surface is heated to preset temperature, so that the carbon silicon bonds of silicon carbide substrate surface are broken, silicon atom can be prior to carbon atom liter
Hua Ercong substrate surface desorption, and the carbon atom of surface enrichment can be reconstructed by way of self assembly, to form six sides
Cellular graphene film, referring to shown in Fig. 1 a.Optionally, preset temperature can be set to 1400 DEG C or 1400 DEG C with
On temperature.
Based on the above method, it is formed by the cellular graphene film of six sides in silicon carbide substrate surface, is mainly
It is grown by high temperature epitaxy, the graphene being prepared does not need to be transferred on substrate by vapor deposition, thus not
Any additional impurity can be introduced, therefore, the graphene film of high quality can be obtained, which can be with substrate
Good Ohmic contact is carried out, thus substantially increases the carrier mobility of field-effect tube, realizes the biography of terahertz wave band
It is defeated.
S102 deposits source electrode, drain and gate on the graphene film.
Optionally, can the upper surface using plasma sputtering technology of the graphene film deposit one layer of source electrode,
Drain and gate.The present embodiment is to the shape of the source electrode, drain and gate that are deposited and without limitation.
The preparation method of field-effect tube provided in this embodiment directly serves as a contrast silicon carbide in such a way that high temperature epitaxy is grown
Bottom is heated to preset temperature, is broken the carbon silicon bonds of substrate surface, and silicon atom distils prior to carbon atom from surface desorption, makes
The carbon atom for obtaining surface enrichment is reconstructed by way of self assembly, to form one layer of graphene on the surface of silicon carbide substrates
Film deposits source electrode, drain and gate on the graphene film later, obtains field-effect tube.This method can be directly in carbon
High temperature epitaxy growth obtains graphene film on silicon substrate, and the graphene being prepared does not need to be transferred to by vapor deposition
On substrate, so that any additional impurity will not be introduced, therefore, the graphene film of high quality can be obtained, the graphene
Film can carry out good Ohmic contact with substrate, thus substantially increase the carrier mobility of field-effect tube, realize
The transmission of terahertz wave band.
Fig. 2 is the flow diagram for the field-effect tube preparation method that another embodiment provides.The present embodiment what is involved is
A kind of optional implementation of source electrode, drain and gate is deposited on graphene film.On the basis of the above embodiments, on
Stating S102 may include steps of:
S201 deposits source electrode and drain electrode in the upper surface of the graphene film respectively.
Specifically, continuing after obtaining graphene film according to the method for above-mentioned S101 in the upper of the graphene film
Surface deposits source electrode and drain electrode respectively.Optionally, the present embodiment can be by being sputtered on graphene film surface using whole
Technique and lithographic method, deposition obtains source electrode and drain electrode on graphene film surface, it may be assumed that whole sputtering technology is used,
The entire surface of graphene film sputters the material of one layer or multilayer production source electrode and drain electrode, later on being formed by structure
It performs etching, being in the remaining part in graphene film surface after etching is exactly source electrode and drain electrode.Optionally, the present embodiment
It can also be and deposit source electrode and drain electrode respectively at the predeterminable area at the both ends of graphene film upper surface, specifically may refer to down
State two kinds of implementations:
A implementation: depositing one layer of nickel respectively at the predeterminable area at the graphene film both ends, with formed source electrode and
Drain electrode.
Specifically, can be in such a way that partial region sputters, predeterminable area directly at above-mentioned graphene film both ends
Locate splash-proofing sputtering metal and deposit source electrode and drain electrode, obtains A structure, referring to fig. 2 shown in a, in Fig. 2 a, 10 be silicon carbide substrates, and 11 be stone
Black alkene film, 13 be source electrode, and 14 be drain electrode.Optionally, can distinguish at the predeterminable area at the both ends of above-mentioned graphene film
One layer of nickel is deposited, the thickness of obtained nickel layer can be 40nm.Since the work function of nickel metal is higher, contact resistance
It is relatively low, so field-effect tube can be made to reach the carrier mobility of superelevation to realize the transmission of Terahertz frequency range.
B implementation: depositing one layer of gold respectively at the predeterminable area at the graphene film both ends, to form one layer of gold
Film；One layer of titanium is deposited on the surface of the gold thin film, to form source electrode and drain electrode.
Specifically, can be in such a way that partial region sputters directly at the predeterminable area at above-mentioned graphene film both ends
Splash-proofing sputtering metal, to obtain source electrode and drain electrode.Optionally, it first can first be deposited at the predeterminable area at above-mentioned graphene film both ends
Then one layer of gold deposits one layer of titanium on the surface of the gold thin film, to form source electrode and drain electrode to form one layer of gold thin film.It is optional
, the thickness of gold thin film and the titanium film entirety deposited all can be 40nm.Specific structure is referring to fig. 2 shown in b, in Fig. 2 b,
10 be silicon carbide substrates, and 11 be graphene film, and 18 be gold thin film, and 19 be titanium film, wherein gold thin film 18 and titanium film 19 are total
With composition source electrode 13 and drain electrode 14.Since the thermal stability of gold is good, good Ohmic contact, titanium can be formed with graphene
Intensity it is high and be not easy that oxidation-reduction quality is strong, so the carrier mobility of field-effect tube can be improved.
S202 carries out hydrogenation treatment to the graphene film between the source electrode and the drain electrode, to obtain hydrogenation graphite
Alkene film.
Specifically, the present embodiment is after having deposited source electrode and drain electrode, it is thin to the graphene between above-mentioned source electrode and drain electrode
Film carries out hydrogenation treatment, it should be noted that the region right above graphene film between source electrode and drain electrode is known as stone
Black alkene hydrogenates window.
When specific hydrogenation, apply hydrogen ion or hydrogen atom in graphene hydrogenation window, optionally, can be 1~
Apply hydrogen ion and hydrogen atom under energy within the scope of 21eV, so that when graphene and hydrogen plasma or hydrogen atoms contact
Between reach 18~50 seconds so that hydrogenation concentration reach 1%~5%, with obtain hydrogenation graphene film 15, formed structure B, ginseng
As shown in Fig. 2 c, in Fig. 2 c, 10 be silicon carbide substrates, and 11 be graphene film, and 13 be source electrode, and 14 be drain electrode, and 15 be hydrogenation stone
Black alkene film.
Dangling bonds needed for belonging to hydrophobic material shortage growing film as graphene, are unfavorable for the gate medium of field-effect tube
It is bonded with graphene film, therefore, the present embodiment obtains hydrogenation graphene by completing hydrogenation treatment to graphene film region
Film, to improve its hydrophily, contact so as to improve channel layer with gate dielectric layer reduces random motion in field-effect tube
Electrons spread caused by noise influence, greatly enhance the mobility of carrier.
S203 deposits gate dielectric layer on the hydrogenation graphene film, and deposits the grid on the gate dielectric layer
Pole.
Based on the process of above-mentioned S201 to S202, the present embodiment is after obtaining hydrogenation graphene film, in temperature appropriate
It spends under window, optionally, can be existed using water base atomic layer deposition (Atomic Layer Deposition, abbreviation ALD) technique
It hydrogenates graphene film surface and grows gate dielectric layer, above-mentioned temperature window appropriate can be 100~130 DEG C.The present embodiment by
In having carried out hydrogenation treatment to graphene film, therefore, uniform ultra-thin high k can be grown on the surface of hydrogenation graphene film
The gate dielectric layer of value can reduce the diffusion of leakage current and gate impurity.In addition, above-mentioned hydrogenating graphite using ALD technique
Alkene film surface grows gate dielectric layer, can accurately control the chemical constituent and deposition thickness of gate dielectric layer, and grid are situated between
Matter layer impurity is small, and the gate dielectric layer deposited has good uniformity and conformality.
Optionally, it is above-mentioned deposited gate dielectric layer on hydrogenation graphene film after, continue face on the gate dielectric layers
Deposit grid.It optionally, can be by using whole sputtering technology and lithographic method on gate dielectric layer surface, on gate dielectric layer
Deposition obtains grid, it may be assumed that using whole sputtering technology, the material of one layer of production grid is sputtered in the entire surface of gate dielectric layer,
It being performed etching on being formed by structure later, being in the remaining part in gate dielectric layer surface after etching is exactly grid,
Can part sputter by way of directly gate dielectric layer surface predeterminable area deposit one layer production grid material, it is optional
, one layer of nickel can be deposited, directly at the predeterminable area of gate dielectric layer to form grid；It can also be directly in gate dielectric layer
One layer of gold is first deposited at predeterminable area, obtains gold thin film, then in the redeposited one layer of titanium in the upper surface of gold thin film, to form grid
Pole.
Based on foregoing description, being formed by field-effect tube be may refer to shown in Fig. 2 d, and in Fig. 2 d, 10 be silicon carbide substrates,
11 be graphene film, and 13 be source electrode, and 14 be drain electrode, and 15 be hydrogenation graphene film, and 16 be gate dielectric layer, and 17 be grid.
The preparation method of field-effect tube provided in this embodiment, after having prepared graphene film, in above-mentioned graphene
The upper surface of film deposits source electrode and drain electrode respectively, continues to carry out at hydrogenation the graphene film between source electrode and drain electrode later
Reason to deposit gate dielectric layer on hydrogenation graphene film, and is sunk on the gate dielectric layers with obtaining hydrogenation graphene film
Product grid, to obtain field-effect tube.The method of the present embodiment, by being hydrogenated to the graphene film between source electrode and drain electrode
Processing, improves the hydrophily of graphene film, improves contact of the channel layer with gate dielectric layer, so be conducive to gate dielectric layer
With the fitting of hydrogenation graphene film, reduces the influence of noise caused by the electrons spread of random motion in field-effect tube, mention
The high mobility of carrier；In addition, since the present embodiment is equal in the growth of hydrogenation graphene film surface using ALD technique
The gate dielectric layer of even ultra-thin high-k, therefore its chemical constituent that can accurately control gate dielectric layer and deposition thickness, so that
The gate dielectric layer of deposition has good uniformity and conformality, so can reduce the diffusion of leakage current and gate impurity, into
The influence of noise caused by the electrons spread of random motion in field-effect tube is reduced to one step, to substantially increase carrier
Mobility realizes the transmission of terahertz wave band.
Fig. 3 is the flow diagram for the field-effect tube preparation method that another embodiment provides.The present embodiment what is involved is
The optional implementation of another kind of source electrode, drain and gate is deposited on graphene film.On the basis of the above embodiments,
Above-mentioned S102 may include steps of:
S301 coats photoresist in the upper surface of the graphene film, to obtain photoresist layer.
Specifically, after obtaining graphene film according to the method for above-mentioned S101, then in graphene film entirety table
Face uniformly applies and is covered with a layer photoresist, and to obtain photoresist layer, to form corresponding structure C, which may refer to Fig. 3 a
Shown, in Fig. 3 a, 10 be silicon carbide substrates, and 11 be graphene film, and 12 be photoresist layer.Resist response is high, resolution ratio
Height, and have good adhesiveness with substrate, so that membrane left rate is high after development, greatly enhance the property of field-effect tube
Energy.
S302 carries out photoetching to the partial region of the photoresist layer, obtains hydrogenation window, the graphene film to
Naked state is presented by the hydrogenation window in hydrogenation zone.
Based on the process of above-mentioned S101 and S301, after the present embodiment is to photoresist is coated on above-mentioned graphene film, shape
At photoresist layer, photoetching treatment then is carried out to photoresist layer, i.e., using source electrode and drain electrode figure as mask plate, using photoetching technique
Photoetching is carried out to graphene surface, keeps developing liquid developing abundant by exposure, the graphene window photoresist portion hydrogenated needed for confirming
It is point fully erased to obtain hydrogenation window, the region to be hydrogenated of above-mentioned graphene film passes through the exposed shape of above-mentioned hydrogenation window presentation
State, to form corresponding structure D, which be may refer to shown in Fig. 3 b, and in Fig. 3 b, 10 be silicon carbide substrates, and 11 be graphite
Alkene film, 20 be hydrogenation window.
S303 removes remaining photoresist on being formed by structure.
Specifically, the present embodiment coat photoresist be exposed development leave hydrogenation window 20 after, then in institute's shape
At structure on remove remainder photoresist, since microwave plasma-etching speed is than radio frequency plasma speed
Fastly, it but is easy to be carbonized during processing by the photoresist above the graphene of Microwave plasma treatment, and is difficult
It is removed with acetone, therefore, can be cleaned using radio frequency plasma when removing photoresist, i.e., the knot that will be completed
Structure is placed on H2400 DEG C are heated to under/Ar environment, then anneal 1h, so that field-effect tube forms stable barrier height and low
Leakage current, thus under the reduction atmosphere of high temperature, most of pollutant on surface can be removed, to substantially increase device
Performance.
S304 deposits the source electrode and drain electrode respectively on being formed by structure.
Based on the process of above-mentioned S301 to S303, the present embodiment prepared graphene film complete lithography step obtain hydrogen
After changing window 20, continue to deposit source electrode 13 and drain electrode 14 respectively at the both ends of above-mentioned hydrogenation window 20, structure is referring to Fig. 3 c
It is shown.Optionally, the present embodiment directly can sputter one layer at the both ends of above-mentioned hydrogenation window 20 or multilayer makes source electrode 13
With the material of drain electrode 14, it specifically may refer to following two kinds of implementations:
C implementation: it is described hydrogenation window both ends predeterminable area at deposit one layer of nickel respectively, with formed source electrode and
Drain electrode.
Specifically, can be in such a way that partial region sputters directly in the default of the both ends of above-mentioned graphene hydrogenation window
One layer of nickel is deposited at region respectively, optionally, the thickness of obtained nickel layer can be 40nm.Due to nickel metal work function compared with
Height, therefore its contact resistance is relatively low, so field-effect tube can be made to reach the carrier mobility of superelevation to realize terahertz
Hereby band transmission.
D implementation: depositing one layer of gold at the predeterminable area at the hydrogenation window both ends respectively, thin to form one layer of gold
Film, and one layer of titanium is deposited on the surface of the gold thin film, to form source electrode and drain electrode.
Specifically, can be in such a way that partial region sputters first in the predeterminable area punishment at the both ends of above-mentioned hydrogenation window
Not Chen Ji one layer of gold, to form one layer of gold thin film, then above-mentioned gold thin film surface deposit one layer of titanium, thus formed source electrode and
Drain electrode, structure is referring to shown in Fig. 3 d, and in Fig. 3 d, 10 be silicon carbide substrates, and 11 be graphene film, and 18 be gold thin film, and 19 are
Titanium film, 13 be source electrode, and 14 be drain electrode, wherein gold thin film 18 and titanium film 19 collectively constitute source electrode 13 and drain electrode 14.It is optional
, the thickness of gold thin film and the titanium film entirety deposited can be 40nm.It, can be with graphene since the thermal stability of gold is good
Forming good Ohmic contact, the intensity of titanium is high and to be not easy oxidation-reduction quality strong, so can field-effect tube be reached
High carrier mobility.
In traditional handicraft processing, the electron bombardment of high-energy can introduce defect to graphene, and electric property is caused to decline, and
Source electrode and drain electrode is deposited at the both ends that the graphene of formation hydrogenates window by plasma sputtering metallic film technique, can be made
Graphene film and electrode form good Ohmic contact, further increase the electric conductivity of field-effect tube.
S305 carries out hydrogenation treatment to the region to be hydrogenated of the graphene film, obtains hydrogenation graphene film, and
Gate dielectric layer is deposited on the hydrogenation graphene film, and the grid is deposited on the gate dielectric layer.
Specifically, after the present embodiment has deposited source electrode 13 and drain electrode 14 at above-mentioned graphene hydrogenation 20 both ends of window, so
Hydrogenation treatment is carried out to the region to be hydrogenated of above-mentioned graphene film 11 afterwards.
When specific hydrogenation, applying hydrogen ion or hydrogen atom in graphene hydrogenation window 20 optionally be can be 1
Apply hydrogen ion and hydrogen atom under energy within the scope of~21eV, so that graphene and hydrogen plasma or hydrogen atoms contact
Time reaches 18~50 seconds, so that hydrogenation concentration reaches 1%~5%, to obtain hydrogenation graphene film 15, is formed by knot
Structure is referring to shown in above-described embodiment Fig. 2 c.Dangling bonds needed for belonging to hydrophobic material shortage growing film as graphene, it is unfavorable
It is bonded in the gate medium of field-effect tube with graphene, therefore, the present embodiment is by completing hydrogen to 11 region of particular graphite alkene film
Change handles to obtain hydrogenation graphene film 15, to improve its hydrophily, so as to improve the contact of channel layer and gate dielectric layer 16,
The influence for reducing noise caused by the electrons spread of random motion in field-effect tube, greatly enhances the migration of carrier
Rate.
Optionally, it carries out hydrogenation treatment to hydrogenation zone to obtain after hydrogenating graphene film 15, using ALD technique in hydrogen
15 surface of graphite alkene film grows uniform ultra-thin high-k gate dielectric layer 16, is formed by structure referring to shown in Fig. 3 e, and
Grid 17 is deposited on above-mentioned gate dielectric layer 16.Optionally, can by 16 surface of gate dielectric layer using whole sputtering technology and
Lithographic method, deposition obtains grid 17 on gate dielectric layer 16, it may be assumed that using whole sputtering technology, on the surface of gate dielectric layer 16
The material of one layer of production grid 17 of whole sputtering, performs etching on being formed by structure, later in gate dielectric layer after etching
The remaining part in 16 surfaces is exactly grid 17, can also be in such a way that partial region sputters directly in 16 table of gate dielectric layer
The material that the predeterminable area in face deposits one layer of production grid 17 optionally can be directly at the predeterminable area of gate dielectric layer 16
One layer of nickel is deposited, to form grid 17；One layer of gold directly can also be first deposited at the predeterminable area of gate dielectric layer 16, obtain gold
Film 18, then in the redeposited one layer of titanium in the upper surface of gold thin film 18, to form grid 17.Based on foregoing description, it is formed by
Field-effect tube may refer to shown in above-mentioned Fig. 2 d.
The preparation method of field-effect tube provided in this embodiment, high temperature epitaxy growth method prepared graphene film it
Afterwards, by coating photoresist in the upper surface of above-mentioned graphene film, to obtain photoresist layer, later to above-mentioned photoresist layer
Partial region carries out photoetching, to obtain graphene hydrogenation window, the region to be hydrogenated of the graphene film passes through above-mentioned graphite
Alkene hydrogenates window and naked state is presented, and then carries out cleaning treatment of removing photoresist to structure is formed by according to plasma clean, into
And source electrode and drain electrode is deposited respectively at the both ends of the graphene of above-mentioned formation hydrogenation window, after having deposited source electrode and drain electrode,
Continue to carry out hydrogenation treatment to the region to be hydrogenated of above-mentioned graphene film, to obtain hydrogenation graphene film, and in the hydrogenation
ALD process deposits ultrathin high-k value gate dielectric layer is used on graphene film, after obtaining gate dielectric layer, is then situated between in the grid
Deposited metal forms grid on matter layer, to obtain field-effect tube.The method of the present embodiment, by above-mentioned graphene film surface
After coating photoresist, so that clearly exposing hydrogenation window after exposure development, then deposited at the hydrogenation window both ends of formation
Source electrode and drain electrode carries out hydrogenation treatment by the region to be hydrogenated to graphene film, improves the hydrophily of graphene film,
Contact of the channel layer with gate dielectric layer is improved, so being conducive to gate dielectric layer and hydrogenating the fitting of graphene film, is reduced
The influence of noise caused by the electrons spread of random motion in field-effect tube, improves the mobility of carrier；In addition, due to this
Embodiment grows the gate dielectric layer of uniform ultra-thin high-k, therefore its on hydrogenation graphene film surface using ALD technique
The chemical constituent and deposition thickness of gate dielectric layer can be accurately controlled, so that the gate dielectric layer of deposition has good uniformity
And conformality creates a further reduction random motion in field-effect tube so can reduce the diffusion of leakage current and gate impurity
Electrons spread caused by the influence of noise realize the transmission of terahertz wave band to substantially increase carrier mobility.
The embodiment of the invention also provides a kind of structural schematic diagrams of field-effect tube, may refer to shown in above-mentioned Fig. 2 d.It should
Field-effect tube includes: silicon carbide substrates 10, the graphene film 11 positioned at 10 surface of silicon carbide substrates, and is located at described
Grid 17, source electrode 13 and the drain electrode 14 on graphene film surface.
Wherein, the graphene film 11 is to be formed by after the silicon carbide substrates 10 are heated to preset temperature；Institute
Preset temperature is stated for making the silicon atom in the silicon carbide substrates 10 distil, and makes the carbon in the silicon carbide substrates 10 former
Son is reconstructed after silicon atom distillation, to form one layer of graphene film 11 on the surface of the silicon carbide substrates 10.
Optionally, above-mentioned graphene film 11 includes the hydrogenation graphene film 15 after hydrogenation treatment, and above-mentioned grid 17 is set
It sets in the upper surface of above-mentioned hydrogenation graphene film 15, and there are grid between above-mentioned grid 17 and above-mentioned hydrogenation graphene film 15
Dielectric layer 16.Optionally, above-mentioned gate dielectric layer 16 is aluminium oxide Al2O3Or hafnium oxide HfO2, above-mentioned source electrode 13,14 and of drain electrode
Grid 17 be nickel material electrode or above-mentioned source electrode 13, drain electrode 14 and grid 17 be titanium mixed materials electrode.
Field-effect tube in the present embodiment can be made of the method and step of above method embodiment, technical effect with
Above method embodiment is similar, and details are not described herein.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (15)
1. a kind of preparation method of field-effect tube characterized by comprising
Silicon carbide substrates are heated to preset temperature；The preset temperature is used to make the silicon atom liter in the silicon carbide substrates
China, and the carbon atom in the silicon carbide substrates is reconstructed after silicon atom distillation, to be served as a contrast in the silicon carbide
The surface at bottom forms one layer of graphene film；
Source electrode, drain and gate are deposited on the graphene film.
2. the method according to claim 1, wherein described deposit source electrode, drain electrode on the graphene film
And grid, comprising:
Source electrode and drain electrode is deposited respectively in the upper surface of the graphene film；
Hydrogenation treatment is carried out to the graphene film between the source electrode and the drain electrode, to obtain hydrogenation graphene film；
Gate dielectric layer is deposited on the hydrogenation graphene film, and deposits the grid on the gate dielectric layer.
3. the method according to claim 1, wherein on the graphene film deposit source electrode, drain and gate,
Include:
Photoresist is coated in the upper surface of the graphene film, to obtain photoresist layer；
Photoetching is carried out to the partial region of the photoresist layer, obtains hydrogenation window, the region to be hydrogenated of the graphene film
Naked state is presented by the hydrogenation window；
Remaining photoresist is removed on being formed by structure；
Deposit the source electrode and drain electrode respectively on being formed by structure；
Hydrogenation treatment is carried out to the region to be hydrogenated of the graphene film, obtains hydrogenation graphene film, and in the hydrogenation
Gate dielectric layer is deposited on graphene film, and the grid is deposited on the gate dielectric layer.
4. according to the method in claim 2 or 3, which is characterized in that the gate dielectric layer is aluminium oxide Al2O3Or oxidation
Hafnium HfO2。
5. according to the method described in claim 2, it is characterized in that, the upper surface in the graphene film deposits respectively
Source electrode and drain electrode, comprising:
Source electrode and drain electrode is deposited respectively at the predeterminable area at the graphene film both ends.
6. according to the method described in claim 5, it is characterized in that, described at the predeterminable area at the graphene film both ends
Source electrode and drain electrode is deposited respectively, comprising:
One layer of nickel is deposited, respectively at the predeterminable area at the graphene film both ends to form source electrode and drain electrode.
7. according to the method described in claim 5, it is characterized in that, described at the predeterminable area at the graphene film both ends
Source electrode and drain electrode is deposited respectively, comprising:
One layer of gold is deposited, respectively at the predeterminable area at the graphene film both ends to form one layer of gold thin film；
One layer of titanium is deposited on the surface of the gold thin film, to form source electrode and drain electrode.
8. according to the method described in claim 3, it is characterized in that, described deposit the source electrode respectively on being formed by structure
And drain electrode, comprising:
Source electrode and drain electrode is deposited respectively at the both ends of the hydrogenation window.
9. according to the method described in claim 8, it is characterized in that, depositing source electrode and leakage respectively at the both ends of the hydrogenation window
Pole, comprising:
One layer of nickel is deposited respectively at the predeterminable area at the both ends of the hydrogenation window, to form source electrode and drain electrode.
10. according to the method described in claim 8, it is characterized in that, it is described hydrogenation window both ends deposit respectively source electrode and
Drain electrode, comprising:
One layer of gold is deposited respectively at the predeterminable area at the hydrogenation window both ends, to form one layer of gold thin film；
One layer of titanium is deposited on the surface of the gold thin film, to form source electrode and drain electrode.
11. the method according to claim 1, wherein the preset temperature is 1400 DEG C.
12. a kind of field-effect tube characterized by comprising silicon carbide substrates, positioned at the graphene of the silicon carbide substrate surface
Film, and the grid positioned at the graphene film surface, source electrode and drain electrode；
Wherein, the graphene film is to be formed by after the silicon carbide substrates are heated to preset temperature；The default temperature
Degree makes the carbon atom in the silicon carbide substrates former in the silicon for making the silicon atom in the silicon carbide substrates distil
It is reconstructed after son distillation, to form one layer of graphene film on the surface of the silicon carbide substrates.
13. field-effect tube according to claim 12, which is characterized in that after the graphene film includes hydrogenation treatment
Graphene film is hydrogenated, the upper surface of the hydrogenation graphene film, and the grid and the hydrogenation is arranged in the grid
There is gate dielectric layer between graphene film.
14. field-effect tube according to claim 13, which is characterized in that the gate dielectric layer is aluminium oxide Al2O3Or oxygen
Change hafnium HfO2。
15. field-effect tube according to claim 12, which is characterized in that the source electrode, grid and drain electrode are nickel material
Electrode；
Alternatively,
The source electrode, grid and drain electrode are the electrode of titanium mixed materials.
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