CN101252088A - A Realization Method of a Novel Enhanced AlGaN/GaN HEMT Device - Google Patents

A Realization Method of a Novel Enhanced AlGaN/GaN HEMT Device Download PDF

Info

Publication number
CN101252088A
CN101252088A CNA2008100178352A CN200810017835A CN101252088A CN 101252088 A CN101252088 A CN 101252088A CN A2008100178352 A CNA2008100178352 A CN A2008100178352A CN 200810017835 A CN200810017835 A CN 200810017835A CN 101252088 A CN101252088 A CN 101252088A
Authority
CN
China
Prior art keywords
gan
algan
gate
grid
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2008100178352A
Other languages
Chinese (zh)
Other versions
CN101252088B (en
Inventor
张进城
郑鹏天
郝跃
董作典
王冲
张金风
吕玲
秦雪雪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xidian University
Original Assignee
Xidian University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN2008100178352A priority Critical patent/CN101252088B/en
Publication of CN101252088A publication Critical patent/CN101252088A/en
Application granted granted Critical
Publication of CN101252088B publication Critical patent/CN101252088B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

本发明公开了一种新型增强型AlGaN/GaN HEMT器件的实现方法,它涉及微电子技术领域。该实现方法成本低,工艺简单,重复性好,可靠性高,对材料损伤小。可以获得高阈值电压以及纳米级有效沟道长度的增强型HEMT器件。本发明通过在AlN成核层和GaN外延层生长之后,在二次GaN外延层和AlGaN层生长之前,采用刻蚀台面的方法,使台面侧面上的异质结材料沿着非极化方向生长,从而极大的减弱了台面侧面上的异质结材料中的二维电子气密度。这样,将器件的栅极制作在台面的侧面上,当栅极上没有加电压时,导电沟道不会导通或者弱导通;当栅极上外加一定正偏压时,导电沟道导通。本发明可用于高温高频大功率场合、大功率开关以及数字电路中。

Figure 200810017835

The invention discloses a method for realizing a novel enhanced AlGaN/GaN HEMT device, which relates to the technical field of microelectronics. The realization method has the advantages of low cost, simple process, good repeatability, high reliability and little damage to materials. Enhanced HEMT devices with high threshold voltage and nanoscale effective channel length can be obtained. In the present invention, after the growth of the AlN nucleation layer and the GaN epitaxial layer, and before the secondary growth of the GaN epitaxial layer and the AlGaN layer, the method of etching the mesa is used to make the heterojunction material on the side of the mesa grow along the non-polarization direction , thereby greatly weakening the two-dimensional electron gas density in the heterojunction material on the side of the mesa. In this way, the gate of the device is made on the side of the mesa. When no voltage is applied to the gate, the conductive channel will not conduct or weakly conduct; when a certain positive bias is applied to the gate, the conductive channel will conduct Pass. The invention can be used in high-temperature, high-frequency, high-power occasions, high-power switches and digital circuits.

Figure 200810017835

Description

一种新型增强型AlGaN/GaN HEMT器件的实现方法 A Realization Method of a Novel Enhanced AlGaN/GaN HEMT Device

技术领域technical field

本发明属于微电子技术领域,涉及半导体材料、器件制作工艺技术。具体地说是一种新型增强型AlGaN/GaN HEMT器件的实现方法,可用于高温高频大功率场合、大功率开关以及数字电路中。The invention belongs to the technical field of microelectronics, and relates to semiconductor materials and device manufacturing technology. Specifically, it is a new type of enhanced AlGaN/GaN HEMT device implementation method, which can be used in high-temperature, high-frequency, high-power occasions, high-power switches, and digital circuits.

背景技术Background technique

作为宽禁带半导体材料的典型代表,GaN基材料具有禁带宽度大、电子饱和漂移速度高、击穿场强高和导热性能好等特点,可用于制作高温、高频及大功率电子器件。更重要的是,GaN基材料可以形成调制掺杂的AlGaN/GaN异质结构,该结构在室温下可以获得很高的电子迁移率,极高的峰值电子速度和饱和电子速度,并获得比第二代化合物半导体异质结构更高的二维电子气密度。因此,基于AlGaN/GaN异质结的高电子迁移率晶体管HEMT在大功率微波器件方面具有非常好的应用前景。1994年至今,AlGaN/GaN异质结材料的生长和AlGaN/GaN HEMT器件的研制始终占据着GaN电子器件研究的主要地位。然而十几年来针对GaN基电子器件研究的大部分工作集中在耗尽型AlGaN/GaN HEMT器件上,这是因为与基于InP和GaAs的异质结构相比,AlGaN/GaN异质结构中较强极化电荷的存在,使得制造基于GaN的增强型器件变得十分困难,关于这一方面的报道也较少。As a typical representative of wide bandgap semiconductor materials, GaN-based materials have the characteristics of large bandgap width, high electron saturation drift velocity, high breakdown field strength and good thermal conductivity, and can be used to make high-temperature, high-frequency and high-power electronic devices. More importantly, GaN-based materials can form modulation-doped AlGaN/GaN heterostructures, which can obtain high electron mobility, extremely high peak electron velocity and saturation electron velocity at room temperature, and obtain better than the first Higher two-dimensional electron gas density in second-generation compound semiconductor heterostructures. Therefore, the high electron mobility transistor HEMT based on AlGaN/GaN heterojunction has very good application prospects in high-power microwave devices. Since 1994, the growth of AlGaN/GaN heterojunction materials and the development of AlGaN/GaN HEMT devices have always occupied the main position in the research of GaN electronic devices. However, most of the research on GaN-based electronic devices for more than a decade has focused on depletion-mode AlGaN/GaN HEMT devices, because the AlGaN/GaN heterostructures are stronger than those based on InP and GaAs. The existence of polarization charges makes it very difficult to fabricate GaN-based enhancement devices, and there are few reports on this aspect.

增强型AlGaN/GaN HEMT器件具有广阔的应用前景。首先增强型HEMT器件和耗尽型HEMT器件结合形成的倒相器在高温、抗辐射等数字电路中具有很大的应用前景。同时增强型AlGaN/GaN HEMT器件在微波大功率器件和电路也具有很大的应用潜力和很好的电路兼容性,因为目前的微波功率放大器大多采用的还是Si基和GaAs基增强型器件。而且作为功率开关应用,增强型AlGaN/GaN HEMT器件也备受关注。因而研究高性能增强型AlGaN/GaN HEMT器件具有非常重要的意义。Enhanced AlGaN/GaN HEMT devices have broad application prospects. Firstly, the inverter formed by the combination of enhancement mode HEMT device and depletion mode HEMT device has a great application prospect in digital circuits such as high temperature and radiation resistance. At the same time, enhanced AlGaN/GaN HEMT devices also have great application potential and good circuit compatibility in microwave high-power devices and circuits, because most of the current microwave power amplifiers use Si-based and GaAs-based enhanced devices. And as a power switch application, enhanced AlGaN/GaN HEMT devices have also attracted much attention. Therefore, it is of great significance to study high-performance enhancement mode AlGaN/GaN HEMT devices.

目前,不管是国内和国际上,很少有人采用传统的势垒层P型Mg掺杂技术来研制增强型AlGaN/GaN HEMT器件。这是因为,首先,Mg掺杂的工艺技术尚不成熟;其次,Mg在AlGaN中激活能很高,需要很高的退火温度将之激活。因此,当前国际上关于AlGaN/GaN增强型HEMT器件的报道也都是避开了P型重掺杂势垒层的方法,而是采用了一些新的方法。这些方法包括:At present, no matter domestically or internationally, few people use the traditional barrier layer P-type Mg doping technology to develop enhanced AlGaN/GaN HEMT devices. This is because, firstly, the Mg doping process technology is not yet mature; secondly, the activation energy of Mg in AlGaN is very high, and a high annealing temperature is required to activate it. Therefore, the current international reports on AlGaN/GaN enhanced HEMT devices also avoid the method of P-type heavily doped barrier layer, but adopt some new methods. These methods include:

2001年,美国伊利诺伊大学的Kurnar等人采用凹栅技术也成功研制成了AlGaN/GaN增强型HEMT器件。他们在传统耗尽型AlGaN/GaN HEMT器件结构上做了稍微的改变,即在蓝宝石衬底上生长AlGaN/GaN异质结构后,并没有直接电子束蒸发形成栅极,而是先在预生长栅极区域通过在Cl2/Ar等离子体中进行ICP-RIE刻蚀一个凹槽,快速热退火之后在凹栅窗口上制作Ni/Au肖特基接触栅极。通过凹槽深度的调整可以极大的耗尽沟道中的二维电子气。之后这种方法一直被采用。参见文献Kumar,V.,et al.:‘Recessed 0.25mm gateAlGaN=GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE’,Electron.Lett.2001,37,pp.1483-1485。2003年,他们又利用凹栅技术并通过结构优化,用MOCVD法在SiC衬底上成功制造了一微米栅长的高跨导增强型AlGaN/GaN HEMT。该器件的峰值本征跨导为248mS/mm,电流密度为470mA/mm,阈值电压为75mV,fT为8GHz,fMax为26 GHz。参见文献V.Kumar,A.Kuliev,T.Tanaka,Y.Otoki,and I.Adesida,“Hightransconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate,”Electron.Lett.,vol.39,no.24,pp.1758-1760,Nov.2003。In 2001, Kurnar and others at the University of Illinois in the United States also successfully developed an AlGaN/GaN enhanced HEMT device using concave gate technology. They made a slight change in the structure of the traditional depletion-mode AlGaN/GaN HEMT device, that is, after growing the AlGaN/GaN heterostructure on the sapphire substrate, there is no direct electron beam evaporation to form the gate, but the pre-growth In the gate area, a groove is etched by ICP-RIE in Cl 2 /Ar plasma, and a Ni/Au Schottky contact gate is made on the concave gate window after rapid thermal annealing. The two-dimensional electron gas in the channel can be greatly depleted by adjusting the groove depth. This method has been used ever since. See the literature Kumar, V., et al.: 'Recessed 0.25mm gateAlGaN=GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE', Electron. Lett.2001, 37, pp.1483-1485. 2003 , They also used concave gate technology and through structural optimization, successfully fabricated a high transconductance enhanced AlGaN/GaN HEMT with a gate length of one micron on a SiC substrate by MOCVD. The device has a peak intrinsic transconductance of 248mS/mm, a current density of 470mA/mm, a threshold voltage of 75mV, fT of 8GHz, and fMax of 26GHz. See literature V.Kumar, A.Kuliev, T.Tanaka, Y.Otoki, and I.Adesida, "Hightransconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate," Electron.Lett., vol.39, no.24, pp.1758-1760, Nov.2003.

近些年来,国外在研制增强型AlGaN/GaN HEMT器件中发现了一种新技术,即基于氟化物的等离子体注入技术。研究中发现,在AlGaN势垒层中注入氟离子由于F离子强的电负性,势垒层中的F离子将提供稳定的负电荷,从而可以有效的耗尽沟道区的强二维电子气。当注入的F离子数量达到一定数量后,沟道中的二维电子气完全耗尽,原来耗尽型的AlGaN/GaN HEMT被转换为增强型HEMT。2005年,香港科技大学电子工程部Y.CAI等人利用基于氟化物的等离子体处理技术成功研制了高性能的增强型AlGaN/GaN HEMT器件。据报道,室温下薄层载流子浓度为1.3×1013cm-2,迁移率为1000cm2/Vs,器件的阈值电压为0.9V,最大漏极电流为310mA/mm,峰值跨导为148mS/mm,截止频率fT为10.1GHz,最大谐振频率fmax为34.3GHz。参见文献Y.Cai,Y.G.Zhou,K.J.Chen,and K.M.Lau,“High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasmatreatment,”IEEE Electron Device Lett.,vol.26,no.7,pp.435-437。In recent years, foreign countries have discovered a new technology in the development of enhanced AlGaN/GaN HEMT devices, that is, fluoride-based plasma implantation technology. It was found in the research that due to the strong electronegativity of F ions implanted in the AlGaN barrier layer, the F ions in the barrier layer will provide stable negative charges, which can effectively deplete the strong two-dimensional electrons in the channel region. gas. When the number of implanted F ions reaches a certain amount, the two-dimensional electron gas in the channel is completely depleted, and the original depletion-type AlGaN/GaN HEMT is converted into an enhancement-type HEMT. In 2005, Y.CAI and others from the Electronic Engineering Department of Hong Kong University of Science and Technology successfully developed high-performance enhanced AlGaN/GaN HEMT devices using fluoride-based plasma processing technology. It is reported that the carrier concentration of the thin layer at room temperature is 1.3×10 13 cm -2 , the mobility is 1000cm 2 /Vs, the threshold voltage of the device is 0.9V, the maximum drain current is 310mA/mm, and the peak transconductance is 148mS /mm, the cut-off frequency f T is 10.1GHz, and the maximum resonant frequency f max is 34.3GHz. See Y.Cai, YGZhou, KJChen, and KMLau, "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasmatreatment," IEEE Electron Device Lett., vol.26, no.7, pp.435-437 .

之后,关于增强型AlGaN/GaN HEMT器件的报道均是基于凹栅技术和基于氟化物的等离子体注入技术,其性能也不断刷新。2006年美国加里福尼亚大学PALACOS等人将这两种技术有效结合,研制出了一种高性能的增强型AlGaN/GaN HEMT器件。这个器件的栅长为160nm,阈值电压为0.1V,峰值跨导超过了400mS/mm,最大漏极电流达到了1.2A/mm,截止频率fT竟也达到85GHz,最大谐振频率fmax为150GHz。参见文献T.Palacios,A.Chakraborty,S.Keller,S.P.DenBaars,“High-performance E-mode AlGaN/GaN HEMT,”IEEE Electron Device Lett.vol.27,no.6,JUNE 2006。Afterwards, reports on enhanced AlGaN/GaN HEMT devices were all based on recessed gate technology and fluoride-based plasma implantation technology, and their performance was constantly refreshed. In 2006, PALACOS and others at the University of California in the United States effectively combined these two technologies to develop a high-performance enhanced AlGaN/GaN HEMT device. The gate length of this device is 160nm, the threshold voltage is 0.1V, the peak transconductance exceeds 400mS/mm, the maximum drain current reaches 1.2A/mm, the cutoff frequency f T reaches 85GHz, and the maximum resonance frequency f max is 150GHz . See literature T. Palacios, A. Chakraborty, S. Keller, SPDenBaars, "High-performance E-mode AlGaN/GaN HEMT," IEEE Electron Device Lett.vol.27, no.6, JUNE 2006.

综上所述,当前,国际上增强型AlGaN/GaN HEMT器件的制作主要采用凹栅技术和基于氟化物的等离子体注入技术。现有技术目前还存在很大缺点,一是阈值电压不高,目前最高报道的只有0.9V,对于开关应用该阈值电压远远不够;二是无论刻蚀形成凹槽还是氟离子注入都会对材料造成损伤,虽然经过退火可以消除一定损伤,但是残留的损伤仍然会对器件性能和可靠性造成影响,同时目前这种工艺的重复性还不高;三是形成面向微波应用的短沟道器件时需要采用电子束直写等高档工艺设备来制作短栅长,工艺难度较大。To sum up, at present, the fabrication of enhanced AlGaN/GaN HEMT devices in the world mainly adopts concave gate technology and fluoride-based plasma implantation technology. There are still great shortcomings in the existing technology. First, the threshold voltage is not high. The highest reported value is only 0.9V, which is far from enough for switching applications. Second, whether etching to form grooves or fluorine ion implantation will affect the material Although some damage can be eliminated after annealing, the residual damage will still affect the performance and reliability of the device. At the same time, the repeatability of this process is not high; the third is to form short-channel devices for microwave applications. It is necessary to use high-end process equipment such as electron beam direct writing to produce short grid lengths, and the process is relatively difficult.

发明的内容content of the invention

本发明的目的是:为了克服现有技术的缺点,提出了一种新型增强型AlGaN/GaNHEMT器件的实现方法。该实现方法成本低,工艺简单,重复性好,可靠性高,不会对材料造成损伤。可以获得高阈值电压以及纳米级有效沟道长度的增强型HEMT器件。The object of the present invention is: in order to overcome the shortcoming of prior art, propose a kind of realization method of the novel enhanced AlGaN/GaN HEMT device. The realization method has the advantages of low cost, simple process, good repeatability, high reliability and no damage to materials. Enhanced HEMT devices with high threshold voltage and nanoscale effective channel length can be obtained.

本发明的目的是这样实现的:本发明运用外延生长工艺,在AlN成核层和GaN外延层生长之后,在二次GaN外延层和AlGaN层生长之前,采用刻蚀台面的方法,使台面侧面上的异质结材料沿着非极化方向生长,从而极大的减弱了台面侧面上的异质结材料中的二维电子气密度。这样,将器件的栅极制作在台面的侧面上,当栅极上没有加电压时,导电沟道不会导通或者弱导通;当栅极上外加一定正偏压时,导电沟道导通。该增强型AlGaN/GaN HEMT器件的制备按如下几个步骤进行:The object of the present invention is achieved in this way: the present invention uses the epitaxial growth process, after the growth of the AlN nucleation layer and the GaN epitaxial layer, before the secondary GaN epitaxial layer and the AlGaN layer growth, the method of etching the mesa is adopted to make the side of the mesa The heterojunction material on the mesa grows along the non-polarization direction, which greatly weakens the two-dimensional electron gas density in the heterojunction material on the side of the mesa. In this way, the gate of the device is made on the side of the mesa. When no voltage is applied to the gate, the conductive channel will not conduct or weakly conduct; when a certain positive bias is applied to the gate, the conductive channel will conduct Pass. The preparation of the enhanced AlGaN/GaN HEMT device is carried out in the following steps:

(1)在蓝宝石或碳化硅衬底基片上,利用MOCVD或者MBE工艺,生长AlN成核层;(1) On the sapphire or silicon carbide substrate, use MOCVD or MBE process to grow AlN nucleation layer;

(2)在AlN成核层上,生长GaN外延层;(2) On the AlN nucleation layer, grow a GaN epitaxial layer;

(3)在GaN外延层上采用ICP或者RIE工艺刻蚀台面;(3) ICP or RIE process is used to etch the mesa on the GaN epitaxial layer;

(4)刻蚀台面后,将上述制成的样品放入反应室内,二次生长GaN外延层;(4) After etching the mesa, put the sample made above into the reaction chamber, and grow the GaN epitaxial layer for the second time;

(5)二次生长GaN外延层之后,外延生长AlGaN势垒层;(5) After the secondary growth of the GaN epitaxial layer, the epitaxial growth of the AlGaN barrier layer;

(6)在AlGaN势垒层上,采用LPCVD或者PECVD工艺淀积栅介质层,栅介质层可以是SiO2或者SiNx(6) On the AlGaN barrier layer, a gate dielectric layer is deposited by LPCVD or PECVD process, and the gate dielectric layer can be SiO 2 or SiN x ;

(7)栅介质层形成后,光刻源、漏区,获得源、漏区窗口;(7) After the gate dielectric layer is formed, the source and drain regions are photolithographically obtained to obtain the source and drain region windows;

(8)采用电子束蒸发工艺,在源、漏区窗口上蒸发欧姆接触金属,形成源、漏电极;(8) Using electron beam evaporation process, evaporating ohmic contact metal on the windows of source and drain regions to form source and drain electrodes;

(9)源、漏电极形成后,在栅介质层上光刻栅极区域窗口,并在该栅极窗口上采用电子束蒸发工艺蒸发栅极金属,形成栅极;(9) After the source and drain electrodes are formed, photoetching the gate area window on the gate dielectric layer, and using an electron beam evaporation process to evaporate the gate metal on the gate window to form a gate;

(10)栅极形成后,光刻获得加厚电极图形。之后采用电子束蒸发工艺,加厚电极,完成器件制造。(10) After the gate is formed, a thickened electrode pattern is obtained by photolithography. After that, the electron beam evaporation process is used to thicken the electrode and complete the device manufacturing.

上述的一种新型增强型AlGaN/GaN HEMT器件的实现方法,所说的生长AlN成核层其生长条件是:反应室的温度控制在450℃~550℃之间,反应速率小于5nm/分钟,厚度为20nm~40nm。In the implementation method of the above-mentioned novel enhanced AlGaN/GaN HEMT device, the growth conditions for growing the AlN nucleation layer are as follows: the temperature of the reaction chamber is controlled between 450°C and 550°C, and the reaction rate is less than 5nm/min. The thickness is 20nm-40nm.

上述的一种新型增强型AlGaN/GaN HEMT器件的实现方法,所说的生长GaN外延层,其生长条件是:反应室的温度控制在900℃~1050℃之间,反应速率小于20nm/分钟,外延层厚度可以控制,一般在1~3μm。The realization method of the above-mentioned novel enhanced AlGaN/GaN HEMT device, the growth condition of the said growth GaN epitaxial layer is: the temperature of the reaction chamber is controlled between 900°C and 1050°C, the reaction rate is less than 20nm/min, The thickness of the epitaxial layer can be controlled, generally in the range of 1 to 3 μm.

上述的一种新型增强型AlGaN/GaN HEMT器件的实现方法,所说的在GaN外延层上刻蚀台面,在刻蚀台面的过程中,刻蚀的深度视器件所需要的栅长而定。刻蚀台面的目的是为了改变之后生长在其上的处于栅极下方的AlGaN/GaN异质结材料的生长方向,使该区域的异质结材料沿着非极化的方向生长。从而极大的减弱了栅极下方异质结中的二维电子气密度。The implementation method of the above-mentioned novel enhanced AlGaN/GaN HEMT device is to etch the mesa on the GaN epitaxial layer. In the process of etching the mesa, the etching depth depends on the gate length required by the device. The purpose of etching the mesa is to change the growth direction of the AlGaN/GaN heterojunction material under the gate grown on it later, so that the heterojunction material in this region grows along the non-polarized direction. Thus, the two-dimensional electron gas density in the heterojunction under the gate is greatly weakened.

上述的一种新型增强型AlGaN/GaN HEMT器件的实现方法,所说的二次生长GaN外延层,它不仅有效地改善了台面刻蚀后的材料表面质量,更重要的是,通过二次GaN外延层厚度的调整,可以改变非极化面的倾斜角度,从而获得具有不同阈值电压的增强型HEMT器件,因为倾斜角度直接影响非极化面区域的二维电子气密度。The implementation method of the above-mentioned novel enhanced AlGaN/GaN HEMT device, the so-called secondary growth GaN epitaxial layer, not only effectively improves the surface quality of the material after mesa etching, but more importantly, through the secondary GaN The adjustment of the thickness of the epitaxial layer can change the inclination angle of the non-polarization surface, thereby obtaining enhanced HEMT devices with different threshold voltages, because the inclination angle directly affects the two-dimensional electron gas density in the non-polarization surface area.

上述的一种新型增强型AlGaN/GaN HEMT器件的实现方法,所说的在栅介质层上光刻栅极区域窗口,栅极区域窗口选择在栅介质层的侧面上。由于栅极区域下方的异质结中只有极弱的二维电子气密度,当栅极上没有加电压时,导电沟道不会导通或者弱导通;当栅极上外加一定正偏压时,导电沟道导通。The implementation method of the above-mentioned novel enhanced AlGaN/GaN HEMT device is said to photoetch the gate region window on the gate dielectric layer, and the gate region window is selected on the side of the gate dielectric layer. Since there is only a very weak two-dimensional electron gas density in the heterojunction below the gate region, when no voltage is applied to the gate, the conductive channel will not conduct or weakly conduct; when a certain positive bias is applied to the gate , the conduction channel conducts.

本发明与现有技术相比具有如下优点:Compared with the prior art, the present invention has the following advantages:

(1)本发明提出的方法,是通过在异质结材料生长之前进行台面刻蚀,使台面侧面上的异质结材料沿着非极化方向生长,从而极大的减弱了台面侧面上的异质结材料中的二维电子气,因而二维电子气耗尽率高,形成的增强型器件阈值电压较高,可达到1V以上。(1) The method proposed by the present invention is to etch the mesa before the growth of the heterojunction material, so that the heterojunction material on the side of the mesa grows along the non-polarization direction, thereby greatly weakening the polarization on the side of the mesa. The two-dimensional electron gas in the heterojunction material, so the depletion rate of the two-dimensional electron gas is high, and the threshold voltage of the enhanced device formed is higher, which can reach more than 1V.

(2)本发明实现中的工艺步骤均是当前国内相对比较成熟的,工艺过程也比较简单,成本较低,完全和成熟的耗尽型GaN基HEMT器件制备工艺兼容。特别是可以采用微米级光刻工具可以形成纳米级的有效沟道长度,大大降低了短沟道长度器件的工艺难度。(2) The process steps in the implementation of the present invention are relatively mature in China at present, the process is relatively simple, the cost is low, and it is completely compatible with the mature depletion-mode GaN-based HEMT device preparation process. In particular, micron-scale lithography tools can be used to form nanoscale effective channel lengths, which greatly reduces the process difficulty of devices with short channel lengths.

(3)本发明提出的方法,是使用外延生长工艺直接生长得到的。该方法与目前国外常用的凹槽刻蚀和离子注入技术相比,有效避免了刻蚀和离子注入引起的材料损伤,因此工艺重复性更好,器件可靠性更高。(3) The method proposed in the present invention is obtained by direct growth using an epitaxial growth process. Compared with the currently commonly used groove etching and ion implantation technology abroad, this method effectively avoids material damage caused by etching and ion implantation, so the process repeatability is better and the device reliability is higher.

(4)本发明第一次在国内提出了一种新型增强型AlGaN/GaN HEMT器件的实现方法,并给出了单片集成增强型和耗尽型HEMT反相器的实现方法,这将极大地扩展GaN基HEMT器件的应用领域。(4) the present invention proposes a kind of realization method of novel enhanced AlGaN/GaN HEMT device at home for the first time, and provides the realization method of monolithic integrated enhanced type and depletion type HEMT inverter, which will be extremely Greatly expand the application field of GaN-based HEMT devices.

附图说明Description of drawings

图1是本发明实施例1完成的单栅增强型AlGaN/GaN HEMT器件剖面结构示意图Fig. 1 is a schematic diagram of the cross-sectional structure of a single-gate enhanced AlGaN/GaN HEMT device completed in Embodiment 1 of the present invention

图2是本发明实施例2完成的双栅增强型AlGaN/GaN HEMT器件剖面结构示意图Fig. 2 is a schematic diagram of the cross-sectional structure of the dual-gate enhanced AlGaN/GaN HEMT device completed in Embodiment 2 of the present invention

图3是本发明实施例3完成的单片集成增强型和耗尽型AlGaN/GaN HEMT反相器剖面结构示意图Fig. 3 is a schematic diagram of the cross-sectional structure of the monolithic integrated enhancement mode and depletion mode AlGaN/GaN HEMT inverter completed in Embodiment 3 of the present invention

具体实施方式Detailed ways

参见图1,它是本发明中实施例1完成的单栅增强型AlGaN/GaN HEMT器件剖面结构示意图。本实施例中生长衬底选用0001面蓝宝石衬底,按照如下过程制备单栅增强型AlGaN/GaN HEMT器件:Referring to Fig. 1, it is a schematic cross-sectional structure diagram of a single-gate enhanced AlGaN/GaN HEMT device completed in Embodiment 1 of the present invention. In this embodiment, a 0001-plane sapphire substrate was selected as the growth substrate, and a single-gate enhanced AlGaN/GaN HEMT device was prepared according to the following process:

1.把蓝宝石衬底置于金属有机物化学气相淀积MOCVD设备的反应室中,将反应室的真空度抽至1×10-2Torr之下,在氢气与氨气的混合气体保护下对蓝宝石衬底进行高温热处理和表面氮化,加热温度为1050℃,加热时间为5min,反应室压力为40Torr,通入氢气流量为1500sccm,氨气流量为1500sccm;1. Place the sapphire substrate in the reaction chamber of the metal organic chemical vapor deposition MOCVD equipment, pump the vacuum of the reaction chamber to below 1×10 -2 Torr, and treat the sapphire under the protection of the mixed gas of hydrogen and ammonia. The substrate is subjected to high-temperature heat treatment and surface nitriding, the heating temperature is 1050°C, the heating time is 5min, the pressure of the reaction chamber is 40Torr, the flow rate of hydrogen gas is 1500 sccm, and the flow rate of ammonia gas is 1500 sccm;

2.将衬底温度降低为500℃,保持生长压力为40Torr,氢气流量为1500sccm,氨气流量为1500sccm,向反应室通入流量为30μmol/min的铝源,以生长厚度为30nm的低温AlN成核层;2. Lower the substrate temperature to 500°C, keep the growth pressure at 40Torr, the flow rate of hydrogen gas at 1500 sccm, the flow rate of ammonia gas at 1500 sccm, and feed the aluminum source with a flow rate of 30 μmol/min into the reaction chamber to grow low-temperature AlN with a thickness of 30 nm nucleation layer;

3.将生长温度升高为1000℃,保持生长压力为40Torr,氢气流量为1500sccm,氨气流量为1500sccm,向反应室通入流量为50μmol/min的镓源,以生长厚度为2000nm的GaN外延层;3. Increase the growth temperature to 1000°C, keep the growth pressure at 40Torr, the flow rate of hydrogen gas at 1500 sccm, the flow rate of ammonia gas at 1500 sccm, and feed a gallium source with a flow rate of 50 μmol/min into the reaction chamber to grow GaN epitaxy with a thickness of 2000 nm. layer;

4.淀积二氧化硅SiO2:采用电子蒸发设备淀积厚度约为150nm的SiO2层。增加该步骤是为了在样品上形成SiO2和光刻胶共同起保护作用的双层掩模图形,更有利于保护未刻蚀区域表面;4. Deposit silicon dioxide SiO 2 : use electron evaporation equipment to deposit a SiO 2 layer with a thickness of about 150 nm. This step is added to form a double-layer mask pattern in which SiO 2 and photoresist act together to protect the sample, which is more conducive to protecting the surface of the unetched area;

5.光刻台面:对样品进行甩正胶,转速为5000转/min,然后再在温度为80℃的烘箱中烘10min,通过光刻以及显影形成刻蚀所需的窗口;5. Photolithography table: Swing the positive glue on the sample at a speed of 5000 rpm, and then bake it in an oven at a temperature of 80°C for 10 minutes, and form the window required for etching through photolithography and development;

6.ICP刻蚀:采用ICP干法刻蚀GaN层,形成台面。刻蚀时采用的电极功率为600W,偏压为120V,压力为1Pa,刻蚀时间为200s;6. ICP etching: ICP dry etching is used to etch the GaN layer to form a mesa. The electrode power used during etching is 600W, the bias voltage is 120V, the pressure is 1Pa, and the etching time is 200s;

7.除刻蚀后的掩模:采用丙酮去除刻蚀后的正胶,然后在BOE中浸泡1min去除SiO2掩模,最后用去离子水清洗干净并用氮气吹干;7. Remove the etched mask: use acetone to remove the etched positive resist, then soak in BOE for 1 min to remove the SiO 2 mask, and finally clean it with deionized water and dry it with nitrogen;

8.把样品再次置于金属有机物化学气相淀积MOCVD设备的反应室中,将反应室的真空度抽至1×10-2Torr之下,在氢气与氨气的混合气体保护下对样品进行热处理,加热温度为1000℃,加热时间为5min,反应室压力为40Torr,通入氢气流量为1500sccm,氨气流量为1500sccm;8. Place the sample again in the reaction chamber of the metal organic chemical vapor deposition MOCVD equipment, pump the vacuum of the reaction chamber to below 1×10 -2 Torr, and conduct the sample under the protection of the mixed gas of hydrogen and ammonia. For heat treatment, the heating temperature is 1000°C, the heating time is 5min, the pressure of the reaction chamber is 40Torr, the flow rate of hydrogen gas is 1500sccm, and the flow rate of ammonia gas is 1500sccm;

9.重复步骤3,二次生长100nm厚的GaN外延层;9. Repeat step 3 to grow a GaN epitaxial layer with a thickness of 100nm for the second time;

10.向反应室同时通入铝源和镓源,控制好流量以及反应温度,依次生长3nm未掺杂AlGaN隔离层,15nmSi掺杂AlGaN势垒层和5nm未掺杂AlGaN帽层。势垒层掺杂浓度为2×1018cm-310. Feed the aluminum source and the gallium source into the reaction chamber at the same time, control the flow rate and the reaction temperature, and grow a 3nm undoped AlGaN isolation layer, a 15nm Si-doped AlGaN barrier layer and a 5nm undoped AlGaN cap layer in sequence. The doping concentration of the barrier layer is 2×10 18 cm -3 ;

11.形成氮化硅SiN栅介质层:采用PECVD设备淀积厚度约为5nm的SiN层,然后采用步骤5相同方法在源漏区域形成窗口,采用湿法刻蚀去除源漏区域的SiN介质薄膜;11. Form silicon nitride SiN gate dielectric layer: use PECVD equipment to deposit a SiN layer with a thickness of about 5nm, then use the same method as step 5 to form windows in the source and drain regions, and use wet etching to remove the SiN dielectric film in the source and drain regions ;

12.光刻源、漏区域:为了更好地剥离金属,首先在样品上甩黏附剂,转速为8000转/min,时间为30s,在温度为160℃的高温烘箱中烘20min;然后再在该样品上甩正胶,转速为5000转/min,最后在温度为80℃的高温烘箱中烘10min,光刻获得源、漏区域窗口;12. Source and drain areas of photolithography: In order to better peel off the metal, first shake the adhesive on the sample at a speed of 8000 rpm for 30s, and bake in a high-temperature oven at 160°C for 20 minutes; The positive glue was cast on the sample at a rotation speed of 5000 rpm, and finally baked in a high-temperature oven at 80°C for 10 minutes, and the source and drain area windows were obtained by photolithography;

13.打底膜:采用DQ-500等离子体去胶机去除窗口区未显影干净的光刻胶薄层,该步骤大大提高了剥离的成品率;13. Primer film: Use DQ-500 plasma stripping machine to remove the undeveloped photoresist thin layer in the window area, which greatly improves the stripping yield;

14.蒸发源、漏金属:采用VPC-1100电子束蒸发设备淀积Ti/Al/Ni/Au四层金属;14. Evaporation source and drain metal: use VPC-1100 electron beam evaporation equipment to deposit Ti/Al/Ni/Au four-layer metal;

15.剥离金属及退火:在丙酮中浸泡20min以上后进行超声处理,然后用氮气吹干。将样品放入到快速退火炉中进行退火:首先向退火炉内通入氮气大约7分钟左右,然后在氮气气氛下,温度为850℃条件下进行30s的高温退火;15. Metal stripping and annealing: Soak in acetone for more than 20 minutes, then perform ultrasonic treatment, and then blow dry with nitrogen. Put the sample into the rapid annealing furnace for annealing: first, pass nitrogen into the annealing furnace for about 7 minutes, and then perform high-temperature annealing at 850°C for 30s under nitrogen atmosphere;

16.光刻栅极区域窗口:在样品上甩黏附剂,转速为8000转/min,时间为30s;在温度为160℃的高温烘箱内烘20min;然后再在该样品上甩正胶,转速为5000转/min,最后在温度为80℃的高温烘箱中烘10min,光刻获得栅极窗口;16. Photolithographic gate area window: throw the adhesive on the sample at a speed of 8000 rpm for 30s; bake in a high-temperature oven at a temperature of 160°C for 20 minutes; then throw the positive glue on the sample at a speed of 5000 rpm, and finally baked in a high-temperature oven at 80°C for 10 minutes, and obtained the gate window by photolithography;

17.蒸发栅金属:采用VPC-1100电子束蒸发设备蒸发Ni/Au两层金属,随后将样品浸泡在剥离液中2分钟,获得栅极;17. Evaporate grid metal: Use VPC-1100 electron beam evaporation equipment to evaporate Ni/Au two-layer metal, and then soak the sample in the stripping solution for 2 minutes to obtain the grid;

18.光刻加厚电极:对样品进行甩正胶,转速为5000转/min,然后在温度为80℃的高温烘箱中烘10min,随后光刻获得加厚电极图形;18. Thickened electrode by photolithography: The sample is shaken and the rotation speed is 5000 rpm, and then baked in a high-temperature oven at a temperature of 80°C for 10 minutes, and then the pattern of the thickened electrode is obtained by photolithography;

19.蒸发加厚电极及剥离:采用VPC-1100电子束蒸发设备蒸发Ti/Au两层金属,然后采用剥离工艺得到加厚电极。至此完成器件制造。19. Thickened electrode by evaporation and stripping: Use VPC-1100 electron beam evaporation equipment to evaporate Ti/Au two-layer metal, and then use stripping process to get thickened electrode. So far, the device fabrication is completed.

参见图2,它是本发明中实施例2完成的双栅增强型AlGaN/GaN HEMT器件剖面结构示意图。双栅增强型AlGaN/GaN HEMT器件的制造过程与实施例1其本相同。双栅增强型AlGaN/GaN HEMT器件共用一个源极,两个栅、漏极及AlGaN势垒层相对于源极为左右对称的结构。该器件的源、漏金属通过电子束蒸发Ti/Al/Ni/Au一次完成,之后两个栅极通过电子束蒸发Ti/Au一次完成。Referring to Fig. 2, it is a schematic diagram of the cross-sectional structure of the dual-gate enhanced AlGaN/GaN HEMT device completed in Embodiment 2 of the present invention. The manufacturing process of the dual-gate enhanced AlGaN/GaN HEMT device is essentially the same as that of Embodiment 1. The dual-gate enhanced AlGaN/GaN HEMT device shares one source, and the two gates, drains and AlGaN barrier layers are left-right symmetrical structures with respect to the source. The source and drain metals of the device are completed once by electron beam evaporation Ti/Al/Ni/Au, and then the two gates are completed once by electron beam evaporation Ti/Au.

参见图3,它是本发明中实施例3完成的单片集成增强型和耗尽型AlGaN/GaN HEMT反相器剖面结构示意图。生长衬底仍选用蓝宝石衬底,前续制备过程与实施例1基本相同,只是后续工艺有些变化。Referring to FIG. 3 , it is a schematic diagram of a cross-sectional structure of a monolithic integrated enhancement mode and depletion mode AlGaN/GaN HEMT inverter completed in Embodiment 3 of the present invention. The sapphire substrate is still used as the growth substrate, and the previous preparation process is basically the same as that of Example 1, except that the subsequent process has some changes.

后续工艺的主要变化是:一是耗尽型和增强型HEMT器件共用一个漏极,它们的源、漏电极通过电子束蒸发Ti/Al/Ni/Au一次完成;二是对于耗尽型HEMT器件,在上述的步骤11中同时将源、漏金属区域和栅金属区域的SiN介质去除,耗尽型器件采用Ni/Au双层金属肖特基栅,而增强型HEMT器件采用介质栅。The main changes in the follow-up process are: first, the depletion-mode and enhancement-mode HEMT devices share the same drain, and their source and drain electrodes are completed by electron beam evaporation of Ti/Al/Ni/Au at one time; second, for depletion-mode HEMT devices , in the above step 11, the SiN dielectric in the source, drain metal region and gate metal region is removed at the same time, the depletion type device uses a Ni/Au double-layer metal Schottky gate, and the enhancement mode HEMT device uses a dielectric gate.

对于本领域的专业人员来说,在了解了本发明内容和原理后,能够在不背离本发明的原理和范围的情况下,根据本发明的方法进行形式和细节上的各种修正和改变,但是这些基于本发明的修正和改变仍在本发明的权利要求保护范围之内。For those skilled in the art, after understanding the content and principles of the present invention, they can make various amendments and changes in form and details according to the methods of the present invention without departing from the principles and scope of the present invention. But these amendments and changes based on the present invention are still within the protection scope of the claims of the present invention.

Claims (6)

1. the implementation method of a novel enhancement type AlGaN/GaN HEMT device, implementation step is as follows:
(1) on sapphire or silicon carbide substrates substrate, utilizes MOCVD or MBE technology, the growing AIN nucleating layer;
(2) on the AlN nucleating layer, the growing GaN epitaxial loayer;
(3) on the GaN epitaxial loayer, adopt ICP or RIE technology etching table top;
(4) behind the etching table top, the above-mentioned sample of making is put into reative cell, diauxic growth GaN epitaxial loayer;
(5) after the diauxic growth GaN epitaxial loayer, epitaxial growth AlGaN barrier layer;
(6) on the AlGaN barrier layer, adopt LPCVD or pecvd process deposit gate dielectric layer, gate dielectric layer can be SiO 2Perhaps SiN x
(7) after gate dielectric layer forms, photolithographic source, drain region, acquisition source, drain region window;
(8) adopt electron beam evaporation process, on source, drain region window, evaporate metal ohmic contact, formation source, drain electrode;
(9) after source, drain electrode form, photoetching area of grid window on gate dielectric layer, and on this gate window, adopt electron beam evaporation process evaporation gate metal, form grid;
(10) after grid formed, photoetching obtained the thickening electrode pattern, adopts electron beam evaporation process afterwards, adds thick electrode, finishes the device manufacturing.
2. the manufacture method of a kind of enhanced AlGaN according to claim 1/GaN HEMT device, said its growth conditions of growing AIN nucleating layer is: the temperature of reative cell is controlled between 450 ℃~550 ℃, reaction rate was less than 5nm/ minute, and thickness is 20nm~40nm.
3. the manufacture method of enhanced AlGaN according to claim 1/GaN HEMT device, said growing GaN epitaxial loayer, its growth conditions is: the temperature of reative cell is controlled between 900 ℃~1050 ℃, reaction rate was less than 20nm/ minute, epitaxy layer thickness can be controlled, generally at 1~3 μ m.
4. the manufacture method of enhanced AlGaN according to claim 1/GaN HEMT device, said on the GaN epitaxial loayer etching table top, in the process of etching table top, the needed grid of the degree of depth visual organ spare of etching are grown and are decided, the purpose of mesa etch is the direction of growth for the AlGaN/GaN heterojunction material that is in the grid below thereon of growth after changing, this regional heterojunction material is grown along non-polarised direction, thereby weakened the two-dimensional electron gas density in the heterojunction of grid below greatly.
5. the manufacture method of enhanced AlGaN according to claim 1/GaN HEMT device, said diauxic growth GaN epitaxial loayer, it has not only improved the material surface quality behind the mesa etch effectively, the more important thing is, adjustment by secondary GaN epitaxy layer thickness, can change non-polarized angle of inclination, thereby obtain to have the enhancement mode HEMT device of different Fujian threshold voltage, because the angle of inclination directly influences the two-dimensional electron gas density in non-polarized zone.
6. the manufacture method of enhanced AlGaN according to claim 1/GaN HEMT device, said on gate dielectric layer photoetching area of grid window, the area of grid window is chosen on the side of gate dielectric layer, owing to have only extremely weak two-dimensional electron gas density in the heterojunction of area of grid below, when not having making alive on the grid, conducting channel can conducting or weak conducting; When adding certain positive bias on the grid, the conducting channel conducting.
CN2008100178352A 2008-03-28 2008-03-28 A Realization Method of Enhanced AlGaN/GaN HEMT Device Expired - Fee Related CN101252088B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008100178352A CN101252088B (en) 2008-03-28 2008-03-28 A Realization Method of Enhanced AlGaN/GaN HEMT Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008100178352A CN101252088B (en) 2008-03-28 2008-03-28 A Realization Method of Enhanced AlGaN/GaN HEMT Device

Publications (2)

Publication Number Publication Date
CN101252088A true CN101252088A (en) 2008-08-27
CN101252088B CN101252088B (en) 2010-04-14

Family

ID=39955404

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008100178352A Expired - Fee Related CN101252088B (en) 2008-03-28 2008-03-28 A Realization Method of Enhanced AlGaN/GaN HEMT Device

Country Status (1)

Country Link
CN (1) CN101252088B (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130160A (en) * 2011-01-06 2011-07-20 西安电子科技大学 Trench channel AlGaN/GaN enhanced HEMT device and manufacturing method
CN102299176A (en) * 2011-08-30 2011-12-28 电子科技大学 Ferroelectric film grid reinforced GaN heterojunction field effect transistor
CN102386223A (en) * 2011-11-01 2012-03-21 中山大学 High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method
CN102629624A (en) * 2012-04-29 2012-08-08 西安电子科技大学 Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device
CN102637726A (en) * 2012-04-29 2012-08-15 西安电子科技大学 MS (Metal-Semiconductor)-grid GaN-based enhanced transistor with high electron mobility and manufacture method thereof
CN102938413A (en) * 2012-11-21 2013-02-20 西安电子科技大学 Algan/gan heterojunction enhanced device and manufacturing method thereof
CN102945860A (en) * 2012-11-21 2013-02-27 西安电子科技大学 AlGaN/GaN heterojunction enhancement-mode device with in-situ SiN cap layer and production method thereof
CN103077891A (en) * 2013-01-21 2013-05-01 桂林电子科技大学 Super-junction-based gallium nitride HEMT (High Electron Mobility Transistor) device and preparation method thereof
CN103715086A (en) * 2013-12-27 2014-04-09 苏州晶湛半导体有限公司 Method for manufacturing enhancement device
TWI503974B (en) * 2011-08-01 2015-10-11 Univ Feng Chia Semiconductor device and method of making the same
WO2017088253A1 (en) * 2015-11-24 2017-06-01 中国科学院苏州纳米技术与纳米仿生研究所 Enhancement-mode hemt device inhibiting current collapse effect and preparation method thereof
CN108198747A (en) * 2018-01-09 2018-06-22 湖南理工学院 A kind of method that secondary epitaxy growth prepares gallium nitride material
CN108257911A (en) * 2018-01-11 2018-07-06 上海华虹宏力半导体制造有限公司 The short-circuit method of bridge joint is formed between improving metal by the board that forms a film
CN105977139B (en) * 2016-07-21 2018-09-07 中国电子科技集团公司第十三研究所 GaN epitaxy chip architecture and preparation method applied to three-dimensionally integrated micro-system
WO2018201721A1 (en) * 2017-05-04 2018-11-08 中国电子科技集团公司第十三研究所 Enhanced hfet
CN109414241A (en) * 2016-03-10 2019-03-01 艾皮乔尼克控股有限公司 Microelectronic sensor in super quick microphone
WO2021012340A1 (en) * 2019-07-19 2021-01-28 中国电子科技集团公司第五十五研究所 Gan high-electron-mobility transistor having splicing sub-device and manufacture method therefor
WO2022061525A1 (en) * 2020-09-22 2022-03-31 苏州晶湛半导体有限公司 Semiconductor structure and method for manufacture thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
CN1909241A (en) * 2005-08-04 2007-02-07 中国科学院微电子研究所 Gallium arsenide-based enhanced/depletion type strain high electron mobility transistor material structure

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130160A (en) * 2011-01-06 2011-07-20 西安电子科技大学 Trench channel AlGaN/GaN enhanced HEMT device and manufacturing method
TWI503974B (en) * 2011-08-01 2015-10-11 Univ Feng Chia Semiconductor device and method of making the same
CN102299176A (en) * 2011-08-30 2011-12-28 电子科技大学 Ferroelectric film grid reinforced GaN heterojunction field effect transistor
CN102299176B (en) * 2011-08-30 2013-04-03 电子科技大学 Ferroelectric film grid reinforced GaN heterojunction field effect transistor
CN102386223B (en) * 2011-11-01 2013-08-14 中山大学 High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method
CN102386223A (en) * 2011-11-01 2012-03-21 中山大学 High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method
CN102629624A (en) * 2012-04-29 2012-08-08 西安电子科技大学 Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device
CN102637726A (en) * 2012-04-29 2012-08-15 西安电子科技大学 MS (Metal-Semiconductor)-grid GaN-based enhanced transistor with high electron mobility and manufacture method thereof
CN102629624B (en) * 2012-04-29 2014-08-20 西安电子科技大学 Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device
CN102938413B (en) * 2012-11-21 2015-05-27 西安电子科技大学 Algan/gan heterojunction enhanced device and manufacturing method thereof
CN102945860A (en) * 2012-11-21 2013-02-27 西安电子科技大学 AlGaN/GaN heterojunction enhancement-mode device with in-situ SiN cap layer and production method thereof
CN102938413A (en) * 2012-11-21 2013-02-20 西安电子科技大学 Algan/gan heterojunction enhanced device and manufacturing method thereof
CN103077891A (en) * 2013-01-21 2013-05-01 桂林电子科技大学 Super-junction-based gallium nitride HEMT (High Electron Mobility Transistor) device and preparation method thereof
CN103077891B (en) * 2013-01-21 2015-07-01 中国电子科技集团公司第五十八研究所 Super-junction-based gallium nitride HEMT (High Electron Mobility Transistor) device and preparation method thereof
US10026834B2 (en) 2013-12-27 2018-07-17 Enkris Semiconductor, Inc. Method of manufacturing enhanced device and enhanced device
WO2015096723A1 (en) * 2013-12-27 2015-07-02 苏州晶湛半导体有限公司 Method for manufacturing enhanced component
CN103715086A (en) * 2013-12-27 2014-04-09 苏州晶湛半导体有限公司 Method for manufacturing enhancement device
WO2017088253A1 (en) * 2015-11-24 2017-06-01 中国科学院苏州纳米技术与纳米仿生研究所 Enhancement-mode hemt device inhibiting current collapse effect and preparation method thereof
CN109414241A (en) * 2016-03-10 2019-03-01 艾皮乔尼克控股有限公司 Microelectronic sensor in super quick microphone
CN105977139B (en) * 2016-07-21 2018-09-07 中国电子科技集团公司第十三研究所 GaN epitaxy chip architecture and preparation method applied to three-dimensionally integrated micro-system
WO2018201721A1 (en) * 2017-05-04 2018-11-08 中国电子科技集团公司第十三研究所 Enhanced hfet
US10854741B2 (en) 2017-05-04 2020-12-01 The 13Th Research Institute Of China Electronics Enhanced HFET
CN108198747A (en) * 2018-01-09 2018-06-22 湖南理工学院 A kind of method that secondary epitaxy growth prepares gallium nitride material
CN108257911A (en) * 2018-01-11 2018-07-06 上海华虹宏力半导体制造有限公司 The short-circuit method of bridge joint is formed between improving metal by the board that forms a film
WO2021012340A1 (en) * 2019-07-19 2021-01-28 中国电子科技集团公司第五十五研究所 Gan high-electron-mobility transistor having splicing sub-device and manufacture method therefor
WO2022061525A1 (en) * 2020-09-22 2022-03-31 苏州晶湛半导体有限公司 Semiconductor structure and method for manufacture thereof
CN116057710A (en) * 2020-09-22 2023-05-02 苏州晶湛半导体有限公司 Semiconductor structure and fabrication method thereof

Also Published As

Publication number Publication date
CN101252088B (en) 2010-04-14

Similar Documents

Publication Publication Date Title
CN101252088B (en) A Realization Method of Enhanced AlGaN/GaN HEMT Device
JP6999197B2 (en) Group III nitride enhancement type HEMT based on the composite barrier layer structure and its manufacturing method
JP7178121B2 (en) Semiconductor device manufacturing method and use thereof
CN102629624B (en) Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device
CN105931999B (en) Thin potential barrier enhanced AlGaN/GaN high electron mobility transistor and preparation method thereof
CN101465372A (en) AlN/GaN enhancement type metal-insulator-semiconductor field effect transistor and method of producing the same
US20150053921A1 (en) Enhanced switch device and manufacturing method therefor
CN106981513A (en) III group-III nitride polarization superjunction HEMT device and its preparation method based on high resistant cap
WO2016141762A1 (en) Iii-nitride enhancement hemt and preparation method therefor
CN102386223A (en) High-threshold voltage gallium nitride (GaN) enhancement metal oxide semiconductor heterostructure field effect transistor (MOSHFET) device and manufacturing method
CN107680998A (en) A kind of GaN base p-type grid HFET devices and preparation method thereof
CN107240604A (en) Fluorine injection enhanced AlGaN/GaN HEMTs and preparation method thereof
CN109037326B (en) Enhanced HEMT device with P-type buried layer structure and preparation method thereof
CN101477951B (en) An enhanced AlGaN/GaN field effect transistor and its manufacturing method
CN102637726A (en) MS (Metal-Semiconductor)-grid GaN-based enhanced transistor with high electron mobility and manufacture method thereof
CN111682064A (en) High-performance MIS gate enhancement mode GaN-based high electron mobility transistor and preparation method thereof
CN111223777A (en) GaN-based HEMT device and fabrication method thereof
CN102646705A (en) MIS gate GaN-based enhanced HEMT device and manufacturing method
CN109950324A (en) Group III nitride diode device with p-type anode and method of making the same
CN109950323B (en) Polarized superjunction III-nitride diode device and method of making the same
CN113555429B (en) Normally open HFET device with high breakdown voltage and low on-resistance and method of making same
CN106952957A (en) Longitudinal gallium nitride-based semiconductor device and manufacturing method thereof
CN112582470A (en) Normally-off high electron mobility transistor and manufacturing method thereof
CN104037222B (en) High-voltage trench gate AlGaN/GaN HEMT device structure based on organic polymer polarization effect and manufacturing method of high-voltage trench gate AlGaN/GaN HEMT device structure based on organic polymer polarization effect
CN117497414A (en) Preparation method of gallium oxide field effect transistor with high electron mobility and transistor

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100414

Termination date: 20140328