CN110047953A - n型的二维纳米片阵列及其制备方法及红外光电探测器 - Google Patents
n型的二维纳米片阵列及其制备方法及红外光电探测器 Download PDFInfo
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Abstract
本发明公开了一种n型的二维纳米片阵列及其制备方法及红外光电探测器。其中该p‑n结近红外光电探测器包括：p型的衬底；下电极，形成在所述p型的衬底上；n型的纳米片阵列，形成在所述p型的衬底上；上电极，形成在所述的n型的纳米片阵列上。根据本发明公开的p‑n结近红外光电探测器，能够实现对近红外光的探测，其光响应和灵敏度有了很大的提升，开关比大大提高。
Description
技术领域：本发明涉及近红外光电探测技术领域，具体地，涉及一种n型的二维纳米片阵列及其制备方法以及p-n结近红外光电探测器。
背景技术：光电探测器是一种将光信号转变为电信号的器件，已经成为影响人类日常生活、科技和国防等领域的核心技术之一。ZnO是一种具有压电和光电特性的半导体材料，在过去的几年里，n型的ZnO纳米棒和p型的硅片组成的异质结的压电光电子学效应已被广泛的研究。但是对于二维纳米材料的近红外光电探测器还鲜有报道。首先是与一维纳米材料比，二维纳米材料的压电光电子学效应差；其次，在近红外光波段的光子激发能较低，光吸收很弱。
发明内容
本发明的目的是提供一种n型的二维纳米片阵列及其制备方法以及p-n结近红外光电探测器，以解决现有技术中对近红外光的探测光响应和灵敏度低的问题。
本发明的技术方案为：
一种n型的二维纳米片阵列，该n型二维纳米片阵列为V-doped ZnO纳米片阵列，由以下方法制得：
(1)运用匀胶法或磁控溅射法在基底上制备ZnO种子层；
(2)水热溶液法合成V-doped ZnO纳米片阵列。
所述步骤(2)中水热溶剂为：Zn(NO3)2·6H2O、HMTA和V2O5，水热温度为90～100℃，水热时间为3～5小时。
一种n型的二维纳米片阵列的制备方法，该n型二维纳米片阵列为V-doped ZnO纳米片阵列，由以下方法制得：
(1)运用匀胶法或磁控溅射法在基底上制备ZnO种子层；
(2)水热溶液法合成V-doped ZnO纳米片阵列。
所述步骤(2)中水热溶剂为：Zn(NO3)2·6H2O、HMTA和V2O5，水热温度为90～100℃，水热时间为3～5小时。
一种p-n结近红外光电探测器，包括：
p型衬底；
在所述衬底上形成下部电极；
在所述衬底的另一侧形成n型的纳米片阵列；
在所述n型的纳米片阵列上形成上部电极。
所述的p型衬底为p型Si衬底。
所述的下部电极为Al电极，需运用磁控溅射法在Si衬底上形成。
所述的n型的纳米片阵列为V-doped ZnO纳米片阵列。
所述的上部电极为磁控溅射制得的透明的ITO电极。
本发明的有益效果：
1.运用了V-doped ZnO纳米片阵列的光电探测器与不具有铁电性的ZnO纳米片阵列的光电探测器相比，其光电流在数值上提升了一个数量级。
2.本发明提供的光电探测器能够实现对近红外光的探测。
3.本发明提供的制备工艺简单，成本低，无污染。
附图说明：
图1是根据本发明一种实施方式的光电探测器的剖视图；
图2是根据本发明一种实施方式的V-doped ZnO纳米片阵列的扫描电子显微镜(SEM)照片的示意图；
图3是根据本发明一种实施方式的V-doped ZnO纳米片阵列的电滞回线；
图4是根据本发明一种实施方式的光电探测器的光电流性能。
具体实施方式：
为了使本发明的技术方案更加清楚，下面将结合附图对本发明的技术方案进行清楚、完整的描述。显然，本具体实施方式仅用来解释和说明本发明，但不限于本发明。
图1是根据本发明一种实施方式的p-n结近红外光电探测器的结构图。
如图1所示，本发明一种实施方式提供的光电探测器包括：p型衬底2；下部电极1，形成在所述衬底2下；n型的V-doped ZnO纳米片阵列3，形成在所述衬底2上；以及上部电极4，形成在所述纳米片阵列3上。
其中，所述p-n结近红外光电探测器的上部电极4为透明的ITO电极，下部电极可以为Al电极。所述衬底2采用p型Si衬底，需用丙酮、酒精和去离子水分别冲洗两分钟。所述纳米片阵列3采用水热法合成。
图2是根据本发明一种实施方式的n型的V-doped ZnO纳米片阵列。具体的，需要先在清洗好的p型的Si片上制备一层ZnO种子层，可以采用磁控溅射法或匀胶法，优选制备工艺简单的磁控溅射法。
在本实例中，采用磁控溅射法镀镀ZnO，所得ZnO种子层厚度为50nm，磁控溅射的参数是：压强4mTorr、气流量28sccm、功率60W、溅射时间30min。
图中所示的V-doped ZnO纳米片阵列的厚度为1微米，片与片之间是垂直分立的。具体的水热参数为：Zn(NO3)2·6H2O和HMTA均为25mM，V2O5为1mM；水热温度95摄氏度，水热时间3小时。当然，在其他实施例中可以增大V2O5的摩尔质量，延长水热时间。
图3是根据本发明一种实施方式的n型的V-doped ZnO纳米片阵列的电滞回线。测试时，需要将衬底变成导电性较好的铜片衬底。从图中可以看出，该纳米片阵列具有铁电性。
图4是根据本发明一种实施方式的p-n结近红外光电探测器的光电响应。可以看出，开关比较大(与纯的ZnO纳米片阵列相比)。
以上对本发明做了示例性的描述，应该说明的是，在不脱离本发明的核心的情况下，任何简单的变形、修改或者其他本领域技术人员能够不花费创造性劳动的等同替换均落入本发明的保护范围。
Claims (9)
1.一种n型的二维纳米片阵列，其特征在于，该n型二维纳米片阵列为V-doped ZnO纳米片阵列，由以下方法制得：
(1)运用匀胶法或磁控溅射法在基底上制备ZnO种子层；
(2)水热溶液法合成V-doped ZnO纳米片阵列。
2.根据权利要求1所述的n型的二维纳米片阵列，其特征在于，所述步骤(2)中水热溶剂为：Zn(NO3)2·6H2O、HMTA和V2O5，水热温度为90～100℃，水热时间为3～5小时。
3.一种n型的二维纳米片阵列的制备方法，其特征在于，该n型二维纳米片阵列为V-doped ZnO纳米片阵列，由以下方法制得：
(1)运用匀胶法或磁控溅射法在基底上制备ZnO种子层；
(2)水热溶液法合成V-doped ZnO纳米片阵列。
4.根据权利要求3所述的n型的二维纳米片阵列的制备方法，其特征在于，所述步骤(2)中水热溶剂为：Zn(NO3)2·6H2O、HMTA和V2O5，水热温度为90～100℃，水热时间为3～5小时。
5.一种p-n结近红外光电探测器，其特征在于，包括：
p型衬底；
在所述衬底上形成下部电极；
在所述衬底的另一侧形成n型的纳米片阵列；
在所述n型的纳米片阵列上形成上部电极。
6.根据权利要求5所述的p-n结近红外光电探测器，其特征在于，所述的p型衬底为p型Si衬底。
7.根据权利要求6所述的p-n结近红外光电探测器，其特征在于，所述的下部电极为Al电极，需运用磁控溅射法在Si衬底上形成。
8.根据权利要求7所述的p-n结近红外光电探测器，其特征在于，所述的n型的纳米片阵列为V-doped ZnO纳米片阵列。
9.根据权利要求9所述的p-n结近红外光电探测器，其特征在于，所述的上部电极为磁控溅射制得的透明的ITO电极。
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| CN114512569A (zh) * | 2021-11-25 | 2022-05-17 | 北京师范大学 | 一种梯度掺杂的宽光谱自供能光电探测器 |
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| CN114512569B (zh) * | 2021-11-25 | 2023-06-02 | 北京师范大学 | 一种梯度掺杂的宽光谱自供能光电探测器 |
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