CN110047925B - 一种半导体开关器件 - Google Patents
一种半导体开关器件 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 210000004899 c-terminal region Anatomy 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Junction Field-Effect Transistors (AREA)
Abstract
本发明涉及半导体技术领域,具体涉及一种半导体开关器件,该开关器件包括衬底、形成在衬底上的n型硅衬底区、形成在衬底区上的多陷阱层、形成在多陷阱层上的β‑Ga2O3层、设在β‑Ga2O3的控制极C以及设在衬底两侧面的漏极D和源极S。其中,该开关器件的多陷阱层由Si和β‑Ga2O3掺杂形成的多陷阱层,该多陷阱层中的多个陷阱作为复合中心,可以复合硅沟道中传输的载流子,提高该半导体器件的关断速度,以此实现快速关断的效果。
Description
技术领域
本发明涉及半导体技术领域,具体涉及一种半导体开关器件。
背景技术
半导体β-Ga2O3材料具有宽禁带,具有很高的击穿电场强度,在半导体功率器件上具有很好的应用前景。但是,由于该材料的迁移率非常低,因此阻碍了其在高频半导体器件方面的利用。如何将通过新的工作结构和器件原理来利用氧化镓优点来设计新的半导体器件,已经成为一个亟需解决的技术难点。
发明内容
为了解决现有技术中采用β-Ga2O3材料制成的半导体迁移率低的技术问题,本申请提供一种半导体开关器件,具体包括以下技术方案:
一种半导体开关器件,包括:
衬底;
形成在所述衬底上的n型硅衬底区;
形成在所述衬底区上的多陷阱层,所述多陷阱层为Si掺杂β-Ga2O3形成,其包括多个陷阱;
形成在所述多陷阱层上的β-Ga2O3层;
所述β-Ga2O3层设有第一金属层,形成控制极C;
所述衬底的两侧面分别设有第二金属层和第三金属层,形成漏极D和源极S。
其中,所述衬底为二氧化硅材料。
依据上述实施例的半导体开关器件,在衬底区上设有一层由Si和β-Ga2O3掺杂形成的多陷阱层,该多陷阱层中的多个陷阱作为复合中心,可以复合硅沟道中传输的载流子,提高该半导体器件的关断速度,以此实现快速关断的效果。
附图说明
图1为本申请实施例的半导体开关器件结构示意图;
图2为本申请实施例开关器件工作时漏极电压VD和漏极电流ID变化曲线图。
具体实施方式
下面通过具体实施方式结合附图对本发明作进一步详细说明。其中不同实施方式中类似元件采用了相关联的类似的元件标号。在以下的实施方式中,很多细节描述是为了使得本申请能被更好的理解。然而,本领域技术人员可以毫不费力的认识到,其中部分特征在不同情况下是可以省略的,或者可以由其他元件、材料、方法所替代。在某些情况下,本申请相关的一些操作并没有在说明书中显示或者描述,这是为了避免本申请的核心部分被过多的描述所淹没,而对于本领域技术人员而言,详细描述这些相关操作并不是必要的,他们根据说明书中的描述以及本领域的一般技术知识即可完整了解相关操作。
实施例一:
请参考图1,本实施例提供一种半导体开关器件,该器件包括二氧化硅衬底1,在该衬底1上设有n型硅衬底区2,在n型硅衬底区2上设有一层由Si和β-Ga2O3掺杂形成的多陷阱层5,该多陷阱层中的多个陷阱作为复合中心,可以复合硅沟道中传输的载流子,提高该半导体器件的关断速度。在该多陷阱层5上设有一层纯β-Ga2O3层6,在纯β-Ga2O3层6上设有第一金属层,该第一金属层7形成半导体的控制极C。另外,在衬底1的两侧面分别设有第二金属层3和第三金属层4,分别形成半导体开关器件的漏极D和源极S。其中,多陷阱层5的电子迁移率大于纯β-Ga2O3层的电子迁移率。
请参考图2,工作时,该半导体的源极S接地,在其漏极D加一正电压VD,则n型硅衬底区2中电子将流向漏极D,形成了漏极电流ID。当漏极电压VD继续增大时,导电电子速度增加,能量升高,漏极电流ID也随之增大。在VD增大的过程中,当在控制极C施加一正电压VC,n型硅衬底区2中的部分高能量电子将流向控制极C,在这个过程中,电子将被多陷阱层5中的陷阱迅速俘获,同时多陷阱层5中的电子迁移率比n型硅衬底区2中的小,因此导致漏极电流ID迅速变小。
当VD继续增大时,硅沟道中的电子能量将变得更大,因此进入多陷阱层5中的电子将更多,同时由于电子能量更高,部分电子将穿过多陷阱层5进入纯β-Ga2O3层6,而纯β-Ga2O3层6中的迁移率较小,因此控制极C端的电流IC开始变大,此时漏极电流ID将变得更小甚至消失。因此,可在控制极C施加的合适电压VC,共同来调节沟道电子进入β-Ga2O3层6的多少。通过以上分析可知,通过控制极C端控制,该半导体器件可实现迅速关断。
以上应用了具体个例对本发明进行阐述,只是用于帮助理解本发明,并不用以限制本发明。对于本发明所属技术领域的技术人员,依据本发明的思想,还可以做出若干简单推演、变形或替换。
Claims (2)
1.一种半导体开关器件,其特征在于,包括:
衬底;
形成在所述衬底上的n型硅衬底区;
形成在所述衬底区上的多陷阱层,所述多陷阱层为Si掺杂β-Ga2O3形成,其包括多个陷阱;
形成在所述多陷阱层上的β-Ga2O3层;
所述β-Ga2O3层设有第一金属层,形成控制极C;
在所述n型硅衬底区的两侧面设有第二金属层和第三金属层,形成漏极D和源极S,其中,所述第二金属层和第三金属层与所述n型硅衬底接触。
2.如权利要求1所述的半导体开关器件,其特征在于,所述衬底为二氧化硅材料。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1758456A (zh) * | 2005-10-18 | 2006-04-12 | 南京大学 | 在β三氧化二镓衬底上生长InGaN/GaN量子阱L ED器件结构的方法 |
CN104425487A (zh) * | 2013-09-10 | 2015-03-18 | 株式会社东芝 | 半导体器件 |
CN105336789A (zh) * | 2015-10-29 | 2016-02-17 | 中山大学 | 一种高质量MIS结构的GaN基场效应晶体管及其制备方法 |
CN106449419A (zh) * | 2016-12-08 | 2017-02-22 | 西安电子科技大学 | 基于Ga2O3材料的U型栅MOSFET及其制备方法 |
CN106847881A (zh) * | 2017-01-23 | 2017-06-13 | 西安电子科技大学 | 金属氧化物半导体场效应晶体管及其制作方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1758456A (zh) * | 2005-10-18 | 2006-04-12 | 南京大学 | 在β三氧化二镓衬底上生长InGaN/GaN量子阱L ED器件结构的方法 |
CN104425487A (zh) * | 2013-09-10 | 2015-03-18 | 株式会社东芝 | 半导体器件 |
CN105336789A (zh) * | 2015-10-29 | 2016-02-17 | 中山大学 | 一种高质量MIS结构的GaN基场效应晶体管及其制备方法 |
CN106449419A (zh) * | 2016-12-08 | 2017-02-22 | 西安电子科技大学 | 基于Ga2O3材料的U型栅MOSFET及其制备方法 |
CN106847881A (zh) * | 2017-01-23 | 2017-06-13 | 西安电子科技大学 | 金属氧化物半导体场效应晶体管及其制作方法 |
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