CN110045204B - Single event latch-up holding current test method, device and system - Google Patents
Single event latch-up holding current test method, device and system Download PDFInfo
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Abstract
The application relates to a single event latch holding current testing method, a single event latch holding current testing device and a single event latch holding current testing system. The method comprises the following steps: when the situation that a single-particle latch effect occurs to a device to be tested in current ion beam irradiation is monitored, collecting the current of the device to be tested, and confirming the collected current as an effect current; the method comprises the steps of taking effect current as an initial value of input current of a device to be tested, gradually reducing the input current until the device to be tested in current ion beam irradiation is monitored and the single-particle latch effect is withdrawn, and determining the current input current as withdrawal current corresponding to the device to be tested; obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; the minimum value in each exit current is determined as the single event latch holding current of the device to be tested, so that the single event latch holding current of the device to be tested in a radiation environment can be obtained, the accuracy of testing the single event latch holding current is improved, and data support is provided for improving the latch-up resistance design of the device.
Description
Technical Field
The present disclosure relates to the field of electronic device reliability technologies, and in particular, to a method, an apparatus, and a system for testing a single event latch holding current.
Background
When the spacecraft operates in a severe space radiation environment, particles such as high-energy heavy ions, protons and the like in the capture zone of the Galaxy cosmic rays, the solar cosmic rays and the geomagnetic field in the environment can generate a single event effect in an electronic system of the spacecraft, so that the normal operation of the spacecraft is seriously threatened. According to the statistics of the national geophysical data center in the united states, the total number of faults caused by various reasons in 39 geostationary satellites launched in the united states is 1589 times from 1971 to 1986, wherein the number of faults caused by Single Event Upset (SEU) due to radiation reaches 621 times, which accounts for 39% of the total number of faults. The Chinese space science and technology research institute counts the fault reasons of 6 geostationary satellites in China, and the proportion of the faults caused by the space radiation environment in the total faults reaches 40%.
The single event effect brought by the space radiation increasingly becomes a bottleneck problem restricting the application of the spacecraft, once the single event effect occurs, the electronic devices of the spacecraft are possibly permanently damaged or burnt, for example, the single event latch in the single event effect can cause the electronic devices to form a low-impedance large-current path between a power supply and the ground, so that the circuit cannot normally work or even fails. Therefore, it is necessary to study the effect of single event latches on spacecraft in order to optimize the design of electronic devices. However, in the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the traditional technology cannot accurately test the single-event latch holding current and provide data support for optimizing the design of an electronic device.
Disclosure of Invention
Accordingly, it is desirable to provide a method, an apparatus and a system for testing a single event latch holding current, which can accurately test the single event latch holding current.
In order to achieve the above object, an embodiment of the present application provides a single event latch holding current testing method, including the following steps:
when the situation that a single-particle latch effect occurs to a device to be tested in current ion beam irradiation is monitored, collecting the current of the device to be tested, and confirming the collected current as an effect current;
the method comprises the steps of taking effect current as an initial value of input current of a device to be tested, gradually reducing the input current until the device to be tested in current ion beam irradiation is monitored and the single-particle latch effect is withdrawn, and determining the current input current as withdrawal current corresponding to the device to be tested;
obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; and determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested.
In one embodiment, the step of confirming the occurrence of the single event latchup effect of the device under test comprises:
collecting the current and the current output signal of the device to be tested in the current ion beam irradiation;
if the current is larger than the normal current and the current output signal is different from the normal output signal, confirming that the device to be tested has the single event latch-up effect; the normal current is the current of the device to be tested in a normal working state; the normal output signal is a signal output by the device to be tested in a normal working state.
In one embodiment, the current output signal is confirmed to be different from the normal output signal based on:
when the intensity of the current output signal is smaller than that of the normal output signal, determining that the current output signal is different from the normal output signal;
or
And when the current output signal has signal loss, determining that the current output signal is different from the normal output signal.
In one embodiment, the step of confirming that the device under test exits the single event latchup effect comprises:
when the input current of the device to be tested is reduced at the current time, acquiring the continuous current and the continuous output signal of the device to be tested within the preset time at the current time;
and if the continuous current comprises normal current and the continuous output signal comprises a normal output signal, the device to be tested exits the single event latch-up effect, otherwise, the device to be tested enters the next step to reduce the input current of the device to be tested.
In one embodiment, the effect current is used as an initial value of the input current of the device to be tested, and in the step of reducing the input current successively:
and taking the effect current as an initial value of the input current of the device to be tested, and gradually reducing the value of the input current at preset intervals.
In one embodiment, the collected current includes core current and/or I/O pin current.
In one embodiment, the method further comprises the following steps:
and when the acquired current is larger than a preset threshold value, reducing the value of the input current of the device to be tested to zero.
On the other hand, the embodiment of the present application further provides a single event latch holding current testing apparatus, including:
the signal acquisition module is used for acquiring the current of the device to be detected when the single event latch effect of the device to be detected in the current ion beam irradiation is monitored, and confirming the acquired current as the effective current;
the signal recording module is used for reducing the input current gradually by taking the effect current as an initial value of the input current of the device to be tested until the device to be tested in the current ion beam irradiation is monitored and the single-particle latch effect is withdrawn, and determining the current input current as the withdrawal current corresponding to the device to be tested;
the maintaining current obtaining module is used for obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; and determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested.
In one embodiment, the method further comprises the following steps:
the signal acquisition module is used for acquiring the current and the current output signal of the device to be detected in the current ion beam irradiation;
the judging module is used for confirming that the device to be tested has the single event latch-up effect if the current is larger than the normal current and the current output signal is different from the normal output signal; the normal current is the current of the device to be tested in a normal working state; the normal output signal is a signal output by the device to be tested in a normal working state.
In another aspect, an embodiment of the present application further provides a single event latch holding current testing system for performing the single event latch holding current testing method, including:
the ion beam emission equipment is used for emitting ion beams to the device to be tested;
the device comprises a vacuum tank, wherein a test board for mounting a device to be tested is arranged in the vacuum tank; the test board is connected with a power interface and a signal interface which are arranged on the side wall of the vacuum tank;
the power supply equipment is connected with the power supply interface and used for providing input current for the device to be tested through the test board and collecting the current of the device to be tested;
the signal input and acquisition equipment is connected with the signal interface and used for providing input signals for the device to be tested and acquiring output signals of the device to be tested;
and the control equipment is used for respectively controlling the power supply equipment, the signal input and acquisition equipment and the ion beam emission equipment.
One of the above technical solutions has the following advantages and beneficial effects:
the method comprises the steps of inducing a single event latch-up effect in a device to be tested through a test ion beam, obtaining an effect current at the moment, reducing an input current of the device to be tested gradually by taking the effect current as a starting point, taking the input current when the device to be tested is monitored to exit the single event latch-up effect as an exit current, obtaining exit currents corresponding to the device to be tested in various ion irradiation similarly, and taking the minimum exit current as a single event latch-up maintaining current of the device to be tested, so that the single event latch-up maintaining current for maintaining the single event latch-up effect of the device to be tested in a radiation environment is obtained, the accuracy of the single event latch-up maintaining current is improved, and data support is provided for improving device design.
Drawings
FIG. 1 is a flow chart illustrating a single event latch holding current testing method according to an embodiment;
FIG. 2 is a schematic flow chart illustrating the steps of determining the occurrence of single event latchup in the device under test according to an embodiment;
FIG. 3 is a flow chart illustrating a single event latch holding current testing method according to another embodiment;
FIG. 4 is a flowchart illustrating a step of determining that a device under test exits single event latchup in one embodiment;
FIG. 5 is a flow chart illustrating a single event latch holding current testing method according to another embodiment;
FIG. 6 is a block diagram of an embodiment of a single event latch holding current test apparatus;
FIG. 7 is a block diagram of a single event latch holding current test system according to an embodiment;
fig. 8 is an internal structural diagram of a control device in one embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In order to solve the problem that the conventional technology cannot accurately test the single-event latch holding current and cannot provide support for optimizing the design of an electronic device, as shown in fig. 1, a single-event latch holding current testing method is provided, which comprises the following steps:
step S110, when the situation that the single event latch effect occurs to the device to be tested in the current ion beam irradiation is monitored, collecting the current of the device to be tested, and confirming the collected current as the effect current.
It should be noted that, when the device to be tested is disposed in a vacuum environment, the ion beam emitting device emits an ion beam to the device to be tested to induce the device to be tested to generate a single event latch effect. The device under test may be a device, a module or a system. The single-particle latch-up effect is a phenomenon that a low-impedance large-current path is formed between a power supply and the ground under the bombardment of ion beams in a parasitic controllable silicon tube in an integrated circuit, so that the circuit cannot normally work or even fails.
In one example, as shown in fig. 2, the step of confirming that the single event latch-up occurs in the device under test includes:
step S210, collecting the current and the current output signal of the device to be tested in the current ion beam irradiation;
step S220, if the current is larger than the normal current and the current output signal is different from the normal output signal, confirming that the device to be tested has single event latch-up; the normal current is the current of the device to be tested in a normal working state; the normal output signal is a signal output by the device to be tested in a normal working state.
It should be noted that, when the device to be tested is bombarded by the ion beam, the signal acquisition device continuously acquires the current and the current output signal of the device to be tested and transmits the current and the current output signal to the control device, the control device judges whether the device to be tested has the single event latch effect according to the current and the current output signal, if the current is larger than the normal current and the current output signal is different from the normal output signal, the device to be tested is determined to have the single event latch effect, otherwise, if the current is equal to the normal current and the current output signal is the same as the normal output signal, the device to be tested is determined not to have the single event latch effect. Specifically, the current is larger than the normal current, which means that the current increases sharply and exceeds the normal current by 1.5 times to 2 times.
In one example, the signal input and collection device provides a test signal to the device under test, and the test signal is processed by the device under test to output a current output signal. In one example, different currents of the device under test may be collected, for example, the collected currents include core current and/or I/O (Input/Output) pin current. The normal current is the current of the device to be tested in the normal working state, and the normal output signal is the signal output by the device to be tested in the normal working state.
Further, the situation that the current output signal is different from the normal output signal can be various, including but not limited to the following situations:
firstly, when the intensity of the current output signal is smaller than that of the normal output signal, the current output signal is determined to be different from the normal output signal, the function of a device to be tested is damaged due to the single event latch-up effect, the intensity of the output signal is reduced, the current output signal is compared with the normal output signal, and when the intensity of the current output signal is smaller than that of the normal output signal, the current output signal is determined to be different from the normal output signal.
And secondly, when the signal loss of the current output signal occurs, determining that the current output signal is different from the normal output signal, destroying the function of a device to be tested due to the occurrence of single event latch-up effect, causing the error of a processing signal and the condition that the signal loss occurs in the current output signal, comparing the content borne by the current output signal with the content borne by the normal output signal, and judging that the current output signal is different from the normal output signal when the content borne by the current output signal is different from the content borne by the normal output signal and the signal loss occurs.
When the single event latch effect of the device to be tested located in the current ion beam is judged to occur, the current of the device to be tested at the moment is collected and confirmed as the effective current, and it needs to be noted that the effect circuit is the current inside the device to be tested when the single event latch effect of the device to be tested occurs under the irradiation of the ion beam. In order to induce the device under test to generate a single event latch-up effect and emit different types of single event latch-up effects to the device under test, in an example, as shown in fig. 3, when the device under test in the current ion beam irradiation is monitored and the single event latch-up effect occurs, the method further includes, before the step of collecting the current of the device under test and confirming the collected current as the effective current: step 310, controlling the ion beam emitting device to emit an ion beam of a predetermined type to the device under test in the vacuum environment, that is, after completing a test of an ion beam, controlling the ion beam emitting device to switch the type of the ion beam.
And step S120, taking the effect current as an initial value of the input current of the device to be tested, and gradually reducing the input current until the device to be tested in the current ion beam irradiation is monitored and the single-particle latch effect is exited, and determining the current input current as the exit current corresponding to the device to be tested.
It should be noted that, after the single event latchup effect occurs in the device to be tested, in order to eliminate the single event latchup effect in the device to be tested, a mode of reducing the input current of the device to be tested is adopted. Specifically, each time the input current of the device to be tested is reduced, whether the device to be tested can exit the single event latch-up effect is monitored, if the input current of the device to be tested is reduced at the present time, the device to be tested can exit the single event latch-up effect, and the input current at the present time is used as the exit current of the device to be tested corresponding to the ion beam. The exit current is an input current which enables the device to be tested to exit the single event latch-up effect under the irradiation of the ion beam.
In one example, as shown in fig. 4, the step of confirming that the device under test exits the single event latch-up effect includes:
step S410, when the input current of the device to be tested is reduced at the current time, acquiring the continuous current and the continuous output signal of the device to be tested within the preset time at the current time;
in step S420, if the persistent current includes a normal current and the persistent output signal includes a normal output signal, the device under test exits the single event latch-up effect, otherwise, the next time the input current of the device under test is reduced.
It should be noted that, after the input current of the device to be tested is reduced at the present time, the change conditions of the current and the output signal of the device to be tested are monitored, specifically, the continuous current and the continuous output signal of the device to be tested within the preset time duration are collected and continuously collected, and the change of the continuous current and the continuous output signal is observed, if the continuous current includes the normal current of the device to be tested and the continuous output signal includes the normal output signal of the device to be tested, it is indicated that the continuous current can be recovered to the normal current, the continuous output signal can be recovered to the normal output signal, it is determined that the device to be tested exits the single event latch effect, and otherwise, the input current of the device to be tested is reduced again. The preset time length can be determined according to the test requirement, the longer the preset time length is, the higher the test precision is, but the preset time length is less than the longest time length for the device to be tested to be capable of enduring the single event latch-up effect without being damaged. It should be noted that the continuous current is a continuous current of the device to be tested within a preset time period; the continuous output signal is a signal continuously output by the device to be tested within a preset time length.
In order to more accurately find the input current of the device to be tested for exiting the single event latchup effect, in one example, the effect current is used as an initial value of the input current of the device to be tested, and the input current is gradually reduced by: and taking the effect current as an initial value of the input current of the device to be tested, and gradually reducing the value of the input current at preset intervals. Further, in order to improve the accuracy of finding the input current of the device to be tested exiting the single event latch-up effect, the shorter the preset interval is, the better the preset interval is.
Step S130, obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; and determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested.
It should be noted that, the exit currents of the device under test corresponding to the irradiation of the ion beams of various types are tested according to the steps S110 and S120, the exit currents are compared, and the minimum value is determined as the single-particle latch maintaining current of the device under test.
In order to ensure that the device under test is not damaged during the testing process, in an embodiment, as shown in fig. 5, the single event latch holding current testing method further includes the steps of:
and step S540, when the acquired current is larger than a preset threshold value, reducing the value of the input current of the device to be tested to zero.
It should be noted that, in the whole testing process, it is determined whether the current of the device to be tested exceeds the preset threshold, and when the current of the device to be tested exceeds the preset threshold, the input current of the device to be tested is immediately cut off (i.e., the value of the input current of the device to be tested is reduced to zero), so that the device to be tested is powered off. The preset threshold may be determined according to a normal operating current range of the device under test, for example, according to a rated operating current of the device under test.
In each embodiment of the single particle latch holding current testing method, when the device to be tested in the current ion beam irradiation is monitored and the single particle latch effect occurs, the current of the device to be tested is collected, and the collected current is confirmed as the effective current; the method comprises the steps of taking effect current as an initial value of input current of a device to be tested, gradually reducing the input current until the device to be tested in current ion beam irradiation is monitored and the single-particle latch effect is withdrawn, and determining the current input current as withdrawal current corresponding to the device to be tested; obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; the minimum value in all the exit currents is determined as the single-particle latch holding current of the device to be tested, so that the single-particle latch holding current testing method obtains the single-particle latch holding current for maintaining the single-particle latch of the device to be tested in a radiation environment by testing the exit currents of the device to be tested under various ion beams and taking the minimum value as the single-particle latch holding current of the device to be tested, the accuracy of testing the single-particle latch holding current is improved, and data support is provided for improving device design. Furthermore, the single particle latch holding current testing method is simple and easy to implement, and reduces the input cost for testing the single particle latch holding current.
It should be understood that although the various steps in the flow charts of fig. 1-5 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 1-5 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performance of the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternating with other steps or at least some of the sub-steps or stages of other steps.
In one embodiment, as shown in fig. 6, there is provided a single event latch holding current testing apparatus, including:
the effect current obtaining module 61 is configured to, when it is monitored that a single event latch-up effect occurs in a device to be detected in current ion beam irradiation, collect a current of the device to be detected, and confirm the collected current as an effect current;
the exit current obtaining module 63 is configured to gradually reduce the input current by taking the effect current as an initial value of the input current of the device to be tested, until the device to be tested in the current ion beam irradiation is monitored and the single-particle latch effect exits, and determine the current input current as the exit current corresponding to the device to be tested;
a holding current obtaining module 65, configured to obtain an exit current corresponding to the device under test in the next ion beam irradiation; and determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested.
In one embodiment, the single event latch holding current testing apparatus further comprises:
the signal acquisition module is used for acquiring the current and the current output signal of the device to be detected in the current ion beam irradiation;
the judging module is used for confirming that the device to be tested has single event latch-up effect if the current is larger than the normal current and the current output signal is different from the normal output signal; the normal current is the current of the device to be tested in a normal working state; and the normal output signal is a signal output by the device to be tested in a normal working state.
In one embodiment, the single event latch-up limited current test apparatus further comprises:
the signal acquisition module is also used for acquiring the continuous current and the continuous output signal of the device to be tested within the preset time at the current time when the input current of the device to be tested is reduced at the current time;
and the judging module is also used for exiting the single event latch effect of the device to be tested if the continuous current comprises normal current and the continuous output signal comprises a normal output signal, or entering the next time to reduce the input current of the device to be tested.
For specific limitations of the single-event latch holding current testing apparatus, reference may be made to the above limitations of the single-event latch holding current testing method, which are not described herein again. The above-mentioned single event latch holding current testing device can be implemented in whole or in part by software, hardware and their combination. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
In one embodiment, as shown in fig. 7, a single-particle latch holding current testing system for performing the single-particle latch holding current testing method according to the embodiments of the single-particle latch holding current testing method of the present application is provided, which includes:
an ion beam emitting apparatus 71, the ion beam emitting apparatus 71 being configured to emit an ion beam toward a device under test 73;
a vacuum tank 75, wherein a test board 751 for mounting a device under test 73 is arranged in the vacuum tank 75; the test board 751 is connected with a power interface 753 and a signal interface 755 which are arranged on the side wall of the vacuum tank;
the power supply equipment 77 is connected with the power interface 753, and is used for providing input current for the device to be tested 73 through the test board 751 and collecting the current of the device to be tested 73;
the signal input and acquisition equipment 79 is connected with the signal interface 755 and is used for providing input signals for the device to be tested 73 and acquiring output signals of the device to be tested 73;
a control device 70, the control device 70 being for controlling the power supply device 77, the signal input and collection device 79 and the ion beam emission device 71, respectively.
It should be noted that, the specific working process of the single event latch holding current test system of the present application is as follows:
the control equipment controls the ion beam emitting equipment to emit ion beams to the device to be tested. The control equipment controls the power supply equipment to provide input current for the device to be tested, collects the current of the device to be tested and transmits the current to the control equipment. The control equipment control signal input and acquisition equipment provides an input signal as a test signal for the equipment to be tested, acquires a current output signal of the device to be tested and transmits the current output signal to the control equipment. The control equipment judges that the single event latch effect of the device to be tested occurs according to the current and the current output signal, records the current collected by the signal collection equipment at the moment and confirms the current as an effect current, controls the power supply equipment to reduce the input current of the device to be tested by taking the effect current as a starting point, records the input current of the device to be tested at the current time and confirms the current as an exit current according to the continuous current and the continuous output signal collected by the signal collection equipment after the input current of the device to be tested is reduced each time, and similarly, obtains the exit current of the device to be tested under various ion beams according to the steps, and takes the minimum value in the exit current as the single event latch maintaining current.
In one example, the test board includes a motherboard and a daughter board; the daughter board is electrically connected with the mother board and used for mounting a device to be tested; the motherboard is respectively connected with the power interface and the signal interface. In one example, the control device is remotely connected with a remote control computer, and further, the control device is a computer device or an upper computer. In one example, an oscilloscope is also included to which the signal acquisition device is connected.
In each embodiment of the single-particle latch holding current test system, the structure is simple, and system support can be provided for accurately testing the single-particle latch holding current of the device.
In one embodiment, a control device is provided, the internal structure of which may be as shown in fig. 8. The control device includes a processor, a memory, a network interface, and a database connected by a system bus. Wherein the processor of the control device is configured to provide computational and control capabilities. The memory of the control device comprises a nonvolatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program, and a database. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The database of the computer device is used for storing data such as current, effect current, exit current, single event latch-up holding current and the like. The network interface of the control device is used for communicating with an external terminal through network connection.
Those skilled in the art will appreciate that the architecture shown in fig. 8 is merely a block diagram of some of the structures associated with the disclosed aspects and is not intended to limit the computing devices to which the disclosed aspects apply, as particular computing devices may include more or less components than those shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, there is provided a control apparatus that implements the steps of:
when the situation that a single-particle latch effect occurs to a device to be tested in current ion beam irradiation is monitored, collecting the current of the device to be tested, and confirming the collected current as an effect current;
the method comprises the steps of taking effect current as an initial value of input current of a device to be tested, gradually reducing the input current until the device to be tested in current ion beam irradiation is monitored and the single-particle latch effect is withdrawn, and determining the current input current as withdrawal current corresponding to the device to be tested;
obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; and determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested.
In one embodiment, a computer-readable storage medium is provided, having a computer program stored thereon, which when executed by a processor, performs the steps of:
when the situation that a single-particle latch effect occurs to a device to be tested in current ion beam irradiation is monitored, collecting the current of the device to be tested, and confirming the collected current as an effect current;
the method comprises the steps of taking effect current as an initial value of input current of a device to be tested, gradually reducing the input current until the device to be tested in current ion beam irradiation is monitored and the single-particle latch effect is withdrawn, and determining the current input current as withdrawal current corresponding to the device to be tested;
obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; and determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, databases, or other media used in the embodiments provided herein may include non-volatile and/or volatile memory, among others. Non-volatile memory can include read-only memory (ROM), Programmable ROM (PROM), Electrically Programmable ROM (EPROM), Electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDRSDRAM), Enhanced SDRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), Rambus Direct RAM (RDRAM), direct bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A single event latch holding current test method is characterized by comprising the following steps:
when the situation that a single-particle latch effect occurs to a device to be tested in current ion beam irradiation is monitored, collecting current of the device to be tested, and confirming the collected current as an effect current;
the effect current is used as an initial value of the input current of the device to be tested, the input current is gradually reduced until the device to be tested in the current ion beam irradiation is monitored to exit the single-particle latch effect, and the current input current is confirmed as the exit current corresponding to the device to be tested;
obtaining exit current corresponding to the device to be tested in the next ion beam irradiation; determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested;
the step of confirming the single event latch-up effect of the device to be tested comprises the following steps:
collecting the current and the current output signal of the device to be tested in the current ion beam irradiation;
if the current is larger than the normal current and the current output signal is different from the normal output signal, confirming that the device to be tested has a single event latch-up effect; the normal current is the current of the device to be tested in a normal working state; the normal output signal is a signal output by the device to be tested in a normal working state;
wherein, the step of confirming that the device to be tested exits the single event latch-up effect comprises the following steps:
when the input current of the device to be tested is reduced at the present time, acquiring the continuous current and the continuous output signal of the device to be tested within a preset time length;
and if the continuous current comprises the normal current and the continuous output signal comprises the normal output signal, the device to be tested exits the single event latch-up effect, otherwise, the next time of reducing the input current of the device to be tested is started.
2. The method according to claim 1, wherein the step of collecting the current of the device under test and determining the collected current as an effective current when the single event latch effect of the device under test in the current ion beam irradiation is monitored further comprises:
and controlling an ion beam emitting device to emit ion beams of preset species to the device to be tested in the vacuum environment.
3. The single event latch sustain current test method of claim 1,
when the intensity of the current output signal is smaller than that of the normal output signal, confirming that the current output signal is different from the normal output signal;
or
And when the current output signal has signal loss, determining that the current output signal is different from the normal output signal.
4. The method of claim 1, wherein the current is greater than a normal current by a factor of 1.5 to 2 times greater than the normal current.
5. The method for testing the single event latch-up holding current according to claim 1, wherein the step of gradually reducing the input current with the effect current as an initial value of the input current of the device under test comprises:
and taking the effect current as an initial value of the input current of the device to be tested, and gradually reducing the value of the input current at preset intervals.
6. The method of claim 1, wherein the collected current comprises core current and/or I/O pin current.
7. The method for testing the single event latch holding current according to claim 1, further comprising the steps of:
and when the acquired current is larger than a preset threshold value, reducing the value of the input current of the device to be tested to zero.
8. A single event latch hold current test apparatus, comprising:
the device comprises an effect current acquisition module, a single-particle latch-up detection module and a single-particle latch-up detection module, wherein the effect current acquisition module is used for acquiring the current of a device to be detected when the single-particle latch-up effect of the device to be detected in the current ion beam irradiation is monitored, and confirming the acquired current as an effect current;
the exit current acquisition module is used for taking the effect current as an initial value of the input current of the device to be tested, gradually reducing the input current until the current input current is confirmed as the exit current corresponding to the device to be tested when the device to be tested in the current ion beam irradiation exits the single-particle latch effect;
the maintaining current obtaining module is used for obtaining the exit current corresponding to the device to be tested in the next ion beam irradiation; determining the minimum value in the exit currents as the single event latch maintaining current of the device to be tested;
the signal acquisition module is used for acquiring the current and the current output signal of the device to be detected in the current ion beam irradiation; the signal acquisition module is also used for acquiring the continuous current and the continuous output signal of the device to be tested within a preset time length when the input current of the device to be tested is reduced at the present time;
the judging module is used for confirming that the device to be tested has single event latch-up effect if the current is larger than the normal current and the current output signal is different from the normal output signal; the normal current is the current of the device to be tested in a normal working state; the normal output signal is a signal output by the device to be tested in a normal working state; the judgment module is further used for judging whether the continuous current comprises the normal current or not and judging whether the continuous output signal comprises the normal output signal or not, if so, the device to be tested exits the single event latch effect, otherwise, the device to be tested enters the next step and reduces the input current of the device to be tested.
9. A single event latch hold current test system for performing the single event latch hold current test method of any of claims 1 to 7, comprising:
the ion beam emission equipment is used for emitting ion beams to a device to be tested;
the vacuum tank is internally provided with a test board for mounting the device to be tested; the test board is connected with a power interface and a signal interface which are arranged on the side wall of the vacuum tank;
the power supply equipment is connected with the power supply interface and used for providing input current for the device to be tested through the test board and collecting the current of the device to be tested;
the signal input and acquisition equipment is connected with the signal interface and is used for providing input signals for the device to be tested and acquiring output signals of the device to be tested;
and the control equipment is used for respectively controlling the power supply equipment, the signal input and acquisition equipment and the ion beam emitting equipment.
10. A computer storage medium having a computer program stored thereon, wherein the program, when executed by a processor, implements the single event latch holding current testing method of any of claims 1 to 7.
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