CN110045204A - Single event latch-up maintains current test method, apparatus and system - Google Patents

Single event latch-up maintains current test method, apparatus and system Download PDF

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Publication number
CN110045204A
CN110045204A CN201910341865.7A CN201910341865A CN110045204A CN 110045204 A CN110045204 A CN 110045204A CN 201910341865 A CN201910341865 A CN 201910341865A CN 110045204 A CN110045204 A CN 110045204A
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China
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current
under test
device under
single event
electric current
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CN110045204B (en
Inventor
张战刚
肖庆中
雷志锋
彭超
何玉娟
来萍
黄云
恩云飞
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China Electronic Product Reliability and Environmental Testing Research Institute
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China Electronic Product Reliability and Environmental Testing Research Institute
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/003Environmental or reliability tests

Abstract

This application involves a kind of single event latch-ups to maintain current test method, apparatus and system.The described method includes: acquiring the electric current of device under test, and collected electric current is confirmed as effects current when monitoring that single event latch-up effect occurs in the device under test in current ion beam irradiation;Using effects current as the initial value of the input current of device under test, gradually reduce input current, until current input current to be confirmed as to device under test is corresponding to exit electric current when monitoring the device under test in current ion beam irradiation, exiting single event latch-up effect;The device under test that acquisition is in a kind of lower ion beam irradiation is corresponding to exit electric current;The single event latch-up that the minimum value respectively exited in electric current is confirmed as device under test is maintained into electric current, to, the application can obtain single event latch-up of the device under test under radiation environment and maintain electric current, the accuracy that test single event latch-up maintains electric current is improved, and then provides data support to improve the anti-latch design of device.

Description

Single event latch-up maintains current test method, apparatus and system
Technical field
This application involves electronic reliability technical fields, maintain testing current more particularly to a kind of single event latch-up Method, apparatus and system.
Background technique
When spacecraft is run in severe space radiation environment, galactic cosmic rays, sun universe are penetrated in environment The particles such as high-energy heavy ion, proton in line and earth's magnetic field capture band all can generate simple grain in the electronic system of spacecraft Sub- effect, to seriously threaten the normal operation of spacecraft.It is counted according to American National Geophysical Data Center, from 1971 Year between 1986, because of failure sum totally 1589 times caused by a variety of causes in 39 synchronous satellites of U.S.'s transmitting, wherein because Failure caused by single-particle inversion caused by radiation (Single Event Upset, SEU) accounts for failure sum up to 621 times 39%.China's Space scientific and technical research institute has counted the failure cause in 6, China synchronous satellite, and space radiation environment causes Ratio of the failure in total failare reached 40%.
Space radiation bring single particle effect has become the bottleneck problem for restricting spacecraft application, once occur Single particle effect would be possible to permanent damages or burn the electronic device of spacecraft, such as the single-particle in single particle effect Latch can make electronic device formd between power supply and ground low impedance heavy current access cause circuit can not work normally or even Failure.Influence therefore, it is necessary to study single event latch-up to spacecraft, to optimize the design of electronic device.But During realization, inventor has found that at least there are the following problems in traditional technology: traditional technology can not accurately test list Particle latch maintains electric current, can not provide data for optimization electronic device design and support.
Summary of the invention
Based on this, it is necessary to which in view of the above technical problems, single event latch-up maintenance electric current can accurately be tested by providing one kind Single event latch-up maintain current test method, apparatus and system.
To achieve the goals above, the embodiment of the present application provides a kind of single event latch-up maintenance current test method, packet Include following steps:
When monitoring that single event latch-up effect occurs in the device under test in current ion beam irradiation, device to be measured is acquired The electric current of part, and collected electric current is confirmed as effects current;
Using effects current as the initial value of the input current of device under test, gradually reduce input current, until monitoring In current ion beam irradiation in device under test, exit single event latch-up effect when, by current input current be confirmed as to Survey that device is corresponding exits electric current;
The device under test that acquisition is in a kind of lower ion beam irradiation is corresponding to exit electric current;It will respectively exit in electric current most The single event latch-up that small value is confirmed as device under test maintains electric current.
There is the step of single event latch-up effect in confirmation device under test in one of the embodiments, comprising:
The current flow and current output signal of device under test of the acquisition in current ion beam irradiation;
If current flow is greater than normal current and current output signal is different from normal output signal, device to be measured is confirmed There is single event latch-up effect in part;Normal current is that device under test is in the electric current under normal operating conditions;Normal output signal The signal exported under normal operating conditions is in for device under test.
It is different from normal output signal based on following steps confirmation current output signal in one of the embodiments:
Current output signal intensity be less than normal output signal intensity when, confirmation current output signal with normally it is defeated Signal is different out;
Or
When dropout occurs in current output signal, confirmation current output signal is different from normal output signal.
The step of confirmation device under test exits single event latch-up effect in one of the embodiments, comprising:
When the previous input current for reducing device under test, acquisition continues when the device under test in previous preset duration Electric current and lasting output signal;
If follow current includes normal current and lasting output signal includes normal output signal, device under test is exited Otherwise single event latch-up effect enters the input current for reducing device under test next time.
Gradually reduced using effects current as the initial value of the input current of device under test in one of the embodiments, In the step of input current:
Using effects current as the initial value of the input current of device under test, gradually reduce input current by preset interval Value.
Collected electric current includes core current and/or I/O pin electric current in one of the embodiments,.
It further comprises the steps of: in one of the embodiments,
When collected electric current is greater than preset threshold, the value of the input current of device under test is decreased to zero.
On the other hand, the embodiment of the present application also provides a kind of single event latch-ups to maintain current testing device, comprising:
Signal acquisition module monitors that single event latch-up occurs in the device under test in current ion beam irradiation for working as When effect, the electric current of device under test is acquired, and collected electric current is confirmed as effects current;
Signal logging modle gradually reduces defeated for the initial value of the input current using effects current as device under test Enter electric current, until when monitoring the device under test in current ion beam irradiation, exiting single event latch-up effect, it will be current Input current is confirmed as that device under test is corresponding to exit electric current;
Electric current is maintained to obtain module, the device under test in a kind of lower ion beam irradiation is corresponding to exit electricity for obtaining Stream;The single event latch-up that the minimum value respectively exited in electric current is confirmed as device under test is maintained into electric current.
In one of the embodiments, further include:
Signal acquisition module, for acquiring the device under test current flow being in current ion beam irradiation and current output Signal;
Judgment module, if being used for, current flow is greater than normal current and current output signal is different from normal output signal, Then confirm that single event latch-up effect occurs in device under test;Normal current is that device under test is in the electric current under normal operating conditions; Normal output signal is that device under test is in the signal exported under normal operating conditions.
Another aspect, the embodiment of the present application also provides one kind to maintain testing current side for executing above-mentioned single event latch-up The single event latch-up of method maintains current detecting system, comprising:
Ion beam emittance equipment, ion beam emittance equipment are used to emit ion beam to device under test;
Vacuum tank, the interior test board being equipped with for installing device under test of vacuum tank;Test board on the side wall of vacuum tank The power interface of setting is connected with signaling interface;
Power-supply device, power-supply device connects power interface, for providing input current by test board for device under test, and Acquire the electric current of device under test;
Signal input and acquisition equipment, signal input and acquisition equipment connection signal interface, for being provided for device under test Input signal, and acquire the output signal of device under test;
Equipment is controlled, control equipment for controlling power-supply device, signal input and acquisition equipment and ion beam emittance respectively Equipment.
A technical solution in above-mentioned technical proposal is had the following advantages and beneficial effects:
The application induces single event latch-up effect by test ion beam in device under test, obtains effect electricity this moment Stream, gradually reduces the input current of device under test using effects current as starting point, is monitoring that device under test exits single event latch-up Input current when effect similarly obtains that device under test is corresponding in various types of ion irradiation to exit electricity as electric current is exited Stream, and wherein it is the smallest exit electric current as device under test single event latch-up maintenance electric current, thus, obtain device under test in spoke The single event latch-up for the maintenance single event latch-up effect penetrated under environment maintains electric current, improves test single event latch-up and maintains electric current Accuracy, and then for improve device design provide data support.
Detailed description of the invention
Fig. 1 is the flow diagram that single event latch-up maintains current test method in one embodiment;
Fig. 2 is that the flow diagram of single event latch-up effect step occurs in confirmation device under test in one embodiment;
Fig. 3 is the flow diagram that single event latch-up maintains current test method in another embodiment;
Fig. 4 is the flow diagram that confirmation device under test exits single event latch-up effect step in one embodiment;
Fig. 5 is the flow diagram that single event latch-up maintains current test method in another embodiment;
Fig. 6 is the structural block diagram that single event latch-up maintains current testing device in one embodiment;
Fig. 7 is the structural block diagram that single event latch-up maintains current detecting system in one embodiment;
Fig. 8 is the internal structure chart that equipment is controlled in one embodiment.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not For limiting the application.
Single event latch-up maintenance electric current can not be accurately tested in order to solve traditional technology, is led to not to optimize electronics device The problem of part design provides support, as shown in Figure 1, providing a kind of single event latch-up maintenance current test method, including following Step:
Step S110, when monitoring that single event latch-up effect occurs in the device under test in current ion beam irradiation, The electric current of device under test is acquired, and collected electric current is confirmed as effects current.
It should be noted that by device under test be set to vacuum environment under, ion beam emittance equipment to device under test emit from Beamlet induces device under test and generates single event latch-up effect.Wherein, device under test can be device, module or system.Single-particle Latch-up is parasitic thyristor in integrated circuits under the bombardment of ion beam, and low-resistance is formd between power supply and ground The phenomenon that heavy current access causes circuit to can not work normally or even fail.
In one example, as shown in Fig. 2, the step of single event latch-up effect occurs in confirmation device under test, comprising:
Step S210, the current flow and current output signal of device under test of the acquisition in current ion beam irradiation;
Step S220, if current flow is greater than normal current and current output signal is different from normal output signal, really Recognize device under test and single event latch-up effect occurs;Normal current is that device under test is in the electric current under normal operating conditions;Normally Output signal is that device under test is in the signal exported under normal operating conditions.
It should be noted that signal collecting device constantly acquires device to be measured when device under test is by ion beam bombardment The current flow and current output signal of part are transferred to control equipment, and control equipment is sentenced according to current flow and current output signal Whether disconnected device under test there is single event latch-up effect, if judge current flow be greater than normal current, current output signal with When normal output signal difference, then confirm that single event latch-up effect occurs in device under test, conversely, current flow is equal to if judging When normal current, current output signal are identical as normal output signal, then confirm that device under test does not occur single event latch-up effect. It specifically, current flow, which is greater than normal current, refers to that current flow increases suddenly, and is more than 1.5 times to 2 times of normal current.
In one example, signal input provides test signal to device under test with acquisition equipment, tests signal through to be measured Current output signal is exported after device processing.In one example, the different electric currents of device under test can be acquired, for example, acquisition To electric current include core current and/or I/O (Input/Output, input/output) pin electric current.Wherein, normal current is Device under test is in the electric current under normal operating conditions, and normal output signal is under normal operating conditions for device under test and exports Signal.
Further, the current output signal situation different from normal output signal can be varied, including but not limited to Following situations:
The first confirms current output signal when the intensity of current output signal is less than the intensity of normal output signal It is different from normal output signal, due to the appearance of single event latch-up effect, the function of device under test is destroyed, leads to the letter of output Number intensity become smaller, compare current output signal and normal output signal, be less than normal output in the intensity of current output signal When the intensity of signal, then judge that current output signal is different from normal output signal.
Second, in the appearance dropout of current output signal, confirm current output signal and normal output signal Difference destroys the function of device under test due to the appearance of single event latch-up effect, causes processing signal mistake occur, occurs There is the case where dropout in current output signal, will be in the content of current output signal carrying and normal output signal carrying Appearance is compared, inconsistent in the content that content and the normal output signal of current output signal carrying carry, and signal occurs and loses It loses, then judges that current output signal is different from normal output signal.
When judging that single event latch-up effect occurs in the device under test in current ion beam, the to be measured of this moment is acquired The electric current of device, and the electric current is confirmed as effects current, it should be noted that effect circuit is that device under test is being in ion Electric current when there is single event latch-up effect under beam irradiation, inside device under test.Simple grain is generated in order to induce device under test Sub- latch-up, and single event latch-up effect not of the same race can be emitted to device under test, in one example, as shown in figure 3, working as When monitoring the device under test in current ion beam irradiation, single event latch-up effect occur, the electric current of device under test is acquired, And before the step of collected electric current is confirmed as effects current, step 310 is further comprised the steps of:, control ion beam emittance is set The standby device under test in vacuum environment emits the ion beam of default type, i.e., after the test for finishing a kind of ion beam, Control the type of ion beam emittance equipment switching ion beam.
Step S120 gradually reduces input current, directly using effects current as the initial value of the input current of device under test To monitor in current ion beam irradiation in device under test, exit single event latch-up effect when, by current input current It is confirmed as that device under test is corresponding to exit electric current.
It should be noted that after single event latch-up effect occurs in device under test, in order to eliminate the simple grain in device under test Sub- latch-up, by the way of the input current for reducing device under test.Specifically, every input electricity for reducing a device under test Whether stream, monitoring device under test can exit single event latch-up effect, if when the previous input current for reducing device under test, it is to be measured Device can exit single event latch-up effect, exit electricity using the input current of this time as what device under test corresponded to this kind of ion beam Stream.Wherein, exiting electric current is so that device under test is exited the input current of single event latch-up effect under ion beam irradiation.
In one example, as shown in figure 4, the step of confirmation device under test exits single event latch-up effect, comprising:
Step S410, when the previous input current for reducing device under test, acquisition is when to be measured in previous preset duration The follow current of device and lasting output signal;
Step S420, it is to be measured if follow current includes normal current and lasting output signal includes normal output signal Device exits single event latch-up effect, otherwise enters the input current for reducing device under test next time.
It should be noted that after the previous input current for reducing device under test, the electric current of device under test and defeated is monitored The situation of change of signal out, specifically, the follow current and lasting output for acquiring the device under test in continuous collecting preset duration are believed Number, and the variation for observing follow current and lasting output signal is held if containing the normal current of device under test in follow current Continuous output signal contains the normal output signal of device under test, then illustrates that follow current can revert to normal current, continues Output signal can revert to normal output signal, and confirmation device under test exits single event latch-up effect, conversely, then entering again Reduce the input current of device under test.Wherein, preset duration can be depending on test request, and the longer measuring accuracy of preset duration is more Height, but preset duration be less than device under test can restrain oneself single event latch-up effect without by its damage longest duration.It needs Illustrate, follow current is the continuous electric current of device under test in preset duration;Continuing output signal is in preset duration The signal that device under test continuously exports.
In order to more accurately find the input current that device under test exits single event latch-up effect, in one example, with Initial value of the effects current as the input current of device under test gradually reduces in input current: using effects current as to be measured The initial value of the input current of device is gradually reduced the value of input current by preset interval.Further, in order to improve find to The precision that device exits the input current of single event latch-up effect is surveyed, the shorter preset interval the better.
Step S130, the device under test that acquisition is in a kind of lower ion beam irradiation is corresponding to exit electric current;It will respectively exit The single event latch-up that minimum value in electric current is confirmed as device under test maintains electric current.
It should be noted that according to step S110 and step S120 test device under test in various ion beam irradiations Under it is corresponding exit electric current, respectively exit electric current, by minimum value therein be confirmed as device under test single event latch-up maintain Electric current.
In order to guarantee that during the test, device under test is not damaged, in one embodiment, as shown in figure 5, single-particle Latch maintains current test method to further comprise the steps of:
The value of the input current of device under test is decreased to by step S540 when collected electric current is greater than preset threshold Zero.
It should be noted that judging whether the electric current of device under test has exceeded preset threshold in entire test process, big When preset threshold, then (value for subtracting the input current of device under test is as low as the input current of cutting device under test immediately Zero), device under test is powered off.Wherein, preset threshold can be determined according to device under test running current range, for example, according to The rated operational current of device under test determines.
The application single event latch-up maintains in each embodiment of current test method, when monitoring in current ion beam spoke Device under test according in when there is single event latch-up effect, acquires the electric current of device under test, and collected electric current is confirmed as Effects current;Using effects current as the initial value of the input current of device under test, gradually reduce input current, until monitoring In current ion beam irradiation in device under test, exit single event latch-up effect when, by current input current be confirmed as to Survey that device is corresponding exits electric current;The device under test that acquisition is in a kind of lower ion beam irradiation is corresponding to exit electric current;It will be each The single event latch-up that the minimum value exited in electric current is confirmed as device under test maintains electric current, thus, the application single event latch-up dimension It holds current test method and exits electric current under various ion beams by testing device under test, and be therefrom minimized as to be measured The single event latch-up of device maintains electric current, obtains the single-particle door bolt for the maintenance single event latch-up that device under test is under radiation environment Lock maintains electric current, improves the accuracy that test single event latch-up maintains electric current, and then provide data branch to improve device design It holds.Further, the application single event latch-up maintains current test method simple, easy to accomplish, reduces test single-particle door bolt Maintain the input cost of electric current.
It should be understood that although each step in the flow chart of Fig. 1-5 is successively shown according to the instruction of arrow, These steps are not that the inevitable sequence according to arrow instruction successively executes.Unless expressly stating otherwise herein, these steps Execution there is no stringent sequences to limit, these steps can execute in other order.Moreover, at least one in Fig. 1-5 Part steps may include that perhaps these sub-steps of multiple stages or stage are not necessarily in synchronization to multiple sub-steps Completion is executed, but can be executed at different times, the execution sequence in these sub-steps or stage is also not necessarily successively It carries out, but can be at least part of the sub-step or stage of other steps or other steps in turn or alternately It executes.
In one embodiment, as shown in fig. 6, providing a kind of single event latch-up maintenance current testing device, comprising:
Effects current obtains module 61, monitors that simple grain occurs in the device under test in current ion beam irradiation for working as When sub- latch-up, the electric current of device under test is acquired, and collected electric current is confirmed as effects current;
It exits electric current and obtains module 63, for the initial value of the input current using effects current as device under test, gradually Reduce input current, until when monitoring the device under test in current ion beam irradiation, exiting single event latch-up effect, it will Current input current is confirmed as that device under test is corresponding to exit electric current;
Electric current is maintained to obtain module 65, the device under test in a kind of lower ion beam irradiation is corresponding to be exited for obtaining Electric current;The single event latch-up that the minimum value respectively exited in electric current is confirmed as device under test is maintained into electric current.
In one embodiment, single event latch-up maintains current testing device further include:
Signal acquisition module, for acquiring the current flow for the device under test being in current ion beam irradiation and working as Preceding output signal;
Judgment module, if for the current flow greater than normal current and the current output signal and normal output Signal is different, then confirms that single event latch-up effect occurs in the device under test;The normal current is that the device under test is in Electric current under normal operating conditions;The normal output signal is that the device under test is in the letter exported under normal operating conditions Number.
In one embodiment, single event latch-up limits current testing device further include:
Signal acquisition module is also used to acquire when previous default when the previous input current for reducing device under test The follow current of device under test in length and lasting output signal;
Judgment module, if being also used to, follow current includes normal current and lasting output signal includes normal output signal, Then device under test exits single event latch-up effect, otherwise enters the input current for reducing device under test next time.
The specific restriction of current testing device is maintained to may refer to above for single event latch-up about single event latch-up The restriction of current test method is maintained, details are not described herein.Above-mentioned single event latch-up maintains each mould in current testing device Block can be realized fully or partially through software, hardware and combinations thereof.Above-mentioned each module can be embedded in the form of hardware or independence In processor in computer equipment, it can also be stored in a software form in the memory in computer equipment, in order to Processor, which calls, executes the corresponding operation of the above modules.
In one embodiment, as shown in fig. 7, providing a kind of for executing the maintenance electric current survey of the application single event latch-up Single event latch-up described in each embodiment of method for testing maintains the single event latch-up of current test method to maintain current detecting system, packet It includes:
Ion beam emittance equipment 71, ion beam emittance equipment 71 are used to emit ion beam to device under test 73;
Vacuum tank 75, the interior test board 751 being equipped with for installing device under test 73 of vacuum tank 75;Test board 751 with true The power interface 753 being arranged on the side wall of slack tank connects 755 with signaling interface;
Power-supply device 77, power-supply device 77 connect power interface 753, for being that device under test 73 mentions by test board 751 For input current, and acquire the electric current of device under test 73;
Signal input and acquisition equipment 79, signal input and acquisition 79 connection signal interface 755 of equipment, for being device to be measured Part 73 provides input signal, and acquires the output signal of device under test 73;
Control equipment 70, control equipment 70 for respectively control power-supply device 77, signal input with acquisition equipment 79 and from Beamlet emits equipment 71.
It should be noted that the application single event latch-up maintains the specific work process of current detecting system as follows:
It controls equipment and controls ion beam emittance equipment to device under test transmitting ion beam.Control equipment control power-supply device to Device under test provides input current, and acquires the current flow of device under test and be transferred to control equipment.Control equipment control letter Number input with acquisition equipment to Devices to test provide input signal as test signal, and acquire device under test current output believe Number and be transferred to control equipment.It controls equipment and judges that single-particle door bolt occurs in device under test according to current flow and current output signal When locking effect, the electric current that acquires this moment of tracer signal acquisition equipment is confirmed as effects current, control equipment control power-supply device with Effects current is that starting point gradually reduces the input current of device under test, and according to believing after the input current of each reduction device under test Number acquisition equipment acquisition follow current and lasting output signal, when judging that device under test has exited single event latch-up effect, Record is confirmed as exiting electric current when the input current of previous device under test, similarly, obtains device under test according to above-mentioned steps and exists It is corresponding under various ion beams to exit electric current, and will respectively exit in electric current minimum value as single event latch-up and maintain electric current.
In one example, test board includes motherboard and daughter board;Daughter board is electrically connected motherboard, for installing device under test;It is female Plate is separately connected power interface and signaling interface.In one example, control equipment remotely connects remote control computer, into one Step, control equipment is computer equipment or host computer.It in one example, further include the oscillography of connection signal acquisition equipment Device.
The application single event latch-up maintains in each embodiment of current detecting system, and structure is simple, can adequately survey The single event latch-up for trying out device maintains electric current to provide system support.
In one embodiment, a kind of control equipment is provided, internal structure chart can be as shown in Figure 8.The control is set Standby includes processor, memory, network interface and the database connected by system bus.Wherein, the processing of the control equipment Device is for providing calculating and control ability.The memory of the control equipment includes non-volatile memory medium, built-in storage.This is non- Volatile storage medium is stored with operating system, computer program and database.The built-in storage is non-volatile memory medium In operating system and computer program operation provide environment.The database of the computer equipment is for storing electric current, effect Electric current exits the data such as electric current, single event latch-up maintenance electric current.The network interface of the control equipment is used for logical with external terminal Cross network connection communication.
It will be understood by those skilled in the art that structure shown in Fig. 8, only part relevant to application scheme is tied The block diagram of structure does not constitute the restriction for the computer equipment being applied thereon to application scheme, specific computer equipment It may include perhaps combining certain components or with different component layouts than more or fewer components as shown in the figure.
In one embodiment, a kind of control equipment is provided, which performs the steps of
When monitoring that single event latch-up effect occurs in the device under test in current ion beam irradiation, device to be measured is acquired The electric current of part, and collected electric current is confirmed as effects current;
Using effects current as the initial value of the input current of device under test, gradually reduce input current, until monitoring In current ion beam irradiation in device under test, exit single event latch-up effect when, by current input current be confirmed as to Survey that device is corresponding exits electric current;
The device under test that acquisition is in a kind of lower ion beam irradiation is corresponding to exit electric current;It will respectively exit in electric current most The single event latch-up that small value is confirmed as device under test maintains electric current.
In one embodiment, a kind of computer readable storage medium is provided, computer program is stored thereon with, is calculated Machine program performs the steps of when being executed by processor
When monitoring that single event latch-up effect occurs in the device under test in current ion beam irradiation, device to be measured is acquired The electric current of part, and collected electric current is confirmed as effects current;
Using effects current as the initial value of the input current of device under test, gradually reduce input current, until monitoring In current ion beam irradiation in device under test, exit single event latch-up effect when, by current input current be confirmed as to Survey that device is corresponding exits electric current;
The device under test that acquisition is in a kind of lower ion beam irradiation is corresponding to exit electric current;It will respectively exit in electric current most The single event latch-up that small value is confirmed as device under test maintains electric current.
Those of ordinary skill in the art will appreciate that realizing all or part of the process in above-described embodiment method, being can be with Relevant hardware is instructed to complete by computer program, the computer program can be stored in a non-volatile computer In read/write memory medium, the computer program is when being executed, it may include such as the process of the embodiment of above-mentioned each method.Wherein, To any reference of memory, database or other media used in each embodiment provided herein, may each comprise Non-volatile and/or volatile memory.Nonvolatile memory may include read-only memory (ROM), programming ROM (PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM) or flash memory.Volatile memory may include Random access memory (RAM) or external cache.By way of illustration and not limitation, RAM is available in many forms, Such as static state RAM (SRAM), dynamic ram (DRAM), synchronous dram (SDRAM), double data rate sdram (DDRSDRAM), enhancing Type SDRAM (ESDRAM), synchronization link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic ram (DRDRAM) and memory bus dynamic ram (RDRAM) etc..
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance Shield all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously The limitation to claim therefore cannot be interpreted as.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.

Claims (10)

1. a kind of single event latch-up maintains current test method, which comprises the following steps:
When monitoring that single event latch-up effect occurs in the device under test in current ion beam irradiation, the device to be measured is acquired The electric current of part, and the collected electric current is confirmed as effects current;
Using the effects current as the initial value of the input current of the device under test, gradually reduce the input current, directly To monitor in current ion beam irradiation in the device under test, exit single event latch-up effect when, by current input Electric current is confirmed as that the device under test is corresponding to exit electric current;
The device under test that acquisition is in a kind of lower ion beam irradiation is corresponding to exit electric current;It described is exited each in electric current Minimum value be confirmed as the device under test single event latch-up maintain electric current.
2. single event latch-up according to claim 1 maintains current test method, which is characterized in that the confirmation device to be measured There is the step of single event latch-up effect in part, comprising:
The current flow and current output signal of the device under test of the acquisition in current ion beam irradiation;
If the current flow is greater than normal current and the current output signal is different from normal output signal, institute is confirmed It states device under test and single event latch-up effect occurs;The normal current is that the device under test is in the electricity under normal operating conditions Stream;The normal output signal is that the device under test is in the signal exported under normal operating conditions.
3. single event latch-up according to claim 2 maintains current test method, which is characterized in that
When the intensity of the current output signal is less than the intensity of the normal output signal, the current output signal is confirmed It is different from the normal output signal;
Or
When dropout occurs in the current output signal, the current output signal and the normal output signal are confirmed not Together.
4. single event latch-up according to claim 1 maintains current test method, which is characterized in that the confirmation device to be measured Part exits the step of single event latch-up effect, comprising:
When the previous input current for reducing the device under test, the lasting electricity of the device under test in preset duration is acquired Stream and lasting output signal;
If the follow current includes normal current and the output signal that continues includes normal output signal, described to be measured Device exits single event latch-up effect, otherwise enters the input current for reducing the device under test next time.
5. single event latch-up according to claim 1 maintains current test method, which is characterized in that with the effects current The initial value of input current as the device under test, in the step of gradually reducing the input current:
Using the effects current as the initial value of the input current of the device under test, gradually reduce by preset interval described defeated Enter the value of electric current.
6. single event latch-up according to any one of claims 1 to 5 maintains current test method, which is characterized in that described Collected electric current includes core current and/or I/O pin electric current.
7. single event latch-up according to any one of claims 1 to 5 maintains current test method, which is characterized in that also wrap Include step:
When the collected electric current is greater than preset threshold, the value of the input current of the device under test is decreased to zero.
8. a kind of single event latch-up maintains current testing device characterized by comprising
Effects current obtains module, monitors that single event latch-up occurs in the device under test in current ion beam irradiation for working as When effect, the electric current of the device under test is acquired, and the collected electric current is confirmed as effects current;
It exits electric current and obtains module, for the initial value of the input current using the effects current as the device under test, by It is secondary to reduce the input current, until monitoring the device under test in current ion beam irradiation, exiting single-particle door bolt When locking effect, current input current is confirmed as to the device under test is corresponding to exit electric current;
Electric current is maintained to obtain module, the device under test in a kind of lower ion beam irradiation is corresponding to exit electricity for obtaining Stream;The single event latch-up that each minimum value exited in electric current is confirmed as the device under test is maintained into electric current.
9. single event latch-up according to claim 8 maintains current testing device, which is characterized in that further include:
Signal acquisition module, for acquiring the current flow of the device under test being in current ion beam irradiation and current defeated Signal out;
Judgment module, if for the current flow greater than normal current and the current output signal and normal output signal Difference then confirms that single event latch-up effect occurs in the device under test;The normal current is that the device under test is in normal Electric current under working condition;The normal output signal is that the device under test is in the signal exported under normal operating conditions.
10. a kind of single event latch-up for requiring 1 to 7 single event latch-up to maintain current test method for perform claim maintains Current detecting system characterized by comprising
Ion beam emittance equipment, the ion beam emittance equipment are used to emit ion beam to device under test;
Vacuum tank, the interior test board being equipped with for installing the device under test of the vacuum tank;The test board with described true The power interface being arranged on the side wall of slack tank is connected with signaling interface;
Power-supply device, the power-supply device connect the power interface, for being that the device under test mentions by the test board For input current, and acquire the electric current of the device under test;
Signal input and acquisition equipment, the signal input connect the signaling interface with acquisition equipment, for being described to be measured Device provides input signal, and acquires the output signal of the device under test;
Equipment is controlled, the control equipment for controlling the power-supply device, signal input and acquisition equipment and institute respectively State ion beam emittance equipment.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111639001A (en) * 2020-05-26 2020-09-08 中国人民解放军国防科技大学 Method and system for testing instantaneous dosage rate latch-up effect of microprocessor

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11202020A (en) * 1998-01-13 1999-07-30 Advantest Corp Latch-up tester
CN1588107A (en) * 2004-08-19 2005-03-02 信息产业部电子第五研究所 Latching effect detecting method for CMOS circuit
CN103021469A (en) * 2012-11-30 2013-04-03 北京时代民芯科技有限公司 Universal single event effect detecting method of memory circuit
CN103701087A (en) * 2013-11-28 2014-04-02 兰州空间技术物理研究所 On-track monitoring method for space single event latchup effect
CN103777135A (en) * 2012-10-18 2014-05-07 北京圣涛平试验工程技术研究院有限责任公司 Single particle latch monitoring method and apparatus of FPGA
CN103809109A (en) * 2014-02-26 2014-05-21 工业和信息化部电子第五研究所 Single event effect detection device and system for integrated circuit
CN104237685A (en) * 2014-09-05 2014-12-24 兰州空间技术物理研究所 Space single event effect testing method
CN104934072A (en) * 2015-05-12 2015-09-23 工业和信息化部电子第五研究所 Single particle effect detection method and system
CN105679658A (en) * 2016-01-29 2016-06-15 西北核技术研究所 Reinforcement method for single event latchup resistance of CMOS device
CN106569068A (en) * 2016-11-04 2017-04-19 西北核技术研究所 Anti-transient-ionizing-radiation effect reinforcement method of SRAM
CN108226748A (en) * 2017-12-05 2018-06-29 上海精密计量测试研究所 For the single particle effect test method of SoC systems on chip
CN208334572U (en) * 2018-07-03 2019-01-04 中国电子技术标准化研究院 A kind of integrated circuit Dynamic latch effect detection system

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11202020A (en) * 1998-01-13 1999-07-30 Advantest Corp Latch-up tester
CN1588107A (en) * 2004-08-19 2005-03-02 信息产业部电子第五研究所 Latching effect detecting method for CMOS circuit
CN103777135A (en) * 2012-10-18 2014-05-07 北京圣涛平试验工程技术研究院有限责任公司 Single particle latch monitoring method and apparatus of FPGA
CN103021469A (en) * 2012-11-30 2013-04-03 北京时代民芯科技有限公司 Universal single event effect detecting method of memory circuit
CN103701087A (en) * 2013-11-28 2014-04-02 兰州空间技术物理研究所 On-track monitoring method for space single event latchup effect
CN103809109A (en) * 2014-02-26 2014-05-21 工业和信息化部电子第五研究所 Single event effect detection device and system for integrated circuit
CN104237685A (en) * 2014-09-05 2014-12-24 兰州空间技术物理研究所 Space single event effect testing method
CN104934072A (en) * 2015-05-12 2015-09-23 工业和信息化部电子第五研究所 Single particle effect detection method and system
CN105679658A (en) * 2016-01-29 2016-06-15 西北核技术研究所 Reinforcement method for single event latchup resistance of CMOS device
CN106569068A (en) * 2016-11-04 2017-04-19 西北核技术研究所 Anti-transient-ionizing-radiation effect reinforcement method of SRAM
CN108226748A (en) * 2017-12-05 2018-06-29 上海精密计量测试研究所 For the single particle effect test method of SoC systems on chip
CN208334572U (en) * 2018-07-03 2019-01-04 中国电子技术标准化研究院 A kind of integrated circuit Dynamic latch effect detection system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘宇翔 等: "超大规模FPGA的单粒子效应脉冲激光测试方法", 《微电子学》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111639001A (en) * 2020-05-26 2020-09-08 中国人民解放军国防科技大学 Method and system for testing instantaneous dosage rate latch-up effect of microprocessor

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