CN110010530A - 一种扩散均匀的扩散烧结炉 - Google Patents

一种扩散均匀的扩散烧结炉 Download PDF

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CN110010530A
CN110010530A CN201910336589.5A CN201910336589A CN110010530A CN 110010530 A CN110010530 A CN 110010530A CN 201910336589 A CN201910336589 A CN 201910336589A CN 110010530 A CN110010530 A CN 110010530A
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周公庆
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Tongwei Solar Chengdu Co Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F27D5/0037—Supports specially adapted for semi-conductors
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    • F27—FURNACES; KILNS; OVENS; RETORTS
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    • F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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    • F27—FURNACES; KILNS; OVENS; RETORTS
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Abstract

本发明公开了一种扩散均匀的扩散烧结炉，属于太阳能电池生产设备技术领域，目的在于提供一种扩散均匀的扩散烧结炉，解决现有扩散烧结炉气源扩散不均匀的问题。其包括垂直设置的扩散炉管，扩散炉管外侧设置有隔热层，扩散炉管周围位于扩散炉管与隔热层之间设置有若干加热管，扩散炉管上端安装有扩散炉门，扩散炉管下端中部开设有排气口，扩散炉管下端位于排气口旁还设置有进气口，扩散炉管内位于扩散炉管中部设置有石英舟，石英舟上设置有若干硅片。本发明适用于扩散烧结炉。

Description

一种扩散均匀的扩散烧结炉
技术领域
本发明属于太阳能电池生产设备技术领域，具体涉及一种扩散均匀的扩散烧结炉。
背景技术
扩散工序是整个硅太阳能电池制备中的最关键的工序，扩散工序生成PN结，而PN结的均匀性、可控性一直是太阳能电池研究领域的重点。常规电池为P型基底，需要扩散N型层，通常使用三氯氧磷作为磷源进行气源携带扩散，将硅片竖直并排插入石英舟内，再将石英舟水平放置在扩散炉管内进行加热并通入磷源进行扩散。在这个过程中磷源中的磷元素会均匀的进入硅片表面，从而得到我们需要的N型层。
扩散烧结炉一般是一个密闭的加热腔室，内部为石英管(即扩散炉管)，炉口有堵头，硅片会由炉口送入，然后再关闭密封。石英管外侧为加热管，对腔室加热，加热管的外侧是保温隔热层，另有一个进气口和排气口。通常扩散加热温度可以达到800℃左右，而通入磷源虽然经过加热，但是只是加热到25℃，而通入的其他气体如氮气、氧气均未被预热过，所以相比扩散炉管内的高温，这些气体都是低温状态，密度较低，会先沉到炉管的下方，这是无法避免的，只能靠加热后混合成均匀的反应气体。
现有的扩散炉为横式扩散炉，常规横式扩散炉会有一个很难避免的几个缺陷，第一点：石英舟放置在下方，硅片距离下方的加热管比较近，而距离上方的加热管比较远，这样对于一个硅片来说，下面的扩散的量就会增加，而上面的扩散的量相比就会降低，所以容易造成扩散片上部和下部扩散方阻的差异偏大，进而影响扩散的均匀性。第二点：由于整体的扩散炉管是水平的，而扩散炉管内属于高温状态，当通入扩散气体的时候，相当于通入低温气体，在扩散炉管内部肯定是先下沉，而后被剧烈加热，之后容易形成紊乱的气流，如果气流紊乱，就会影响温度还有浓度的，所以就容易影响扩散的整体的均匀性，而且也容易产生各种扩散异常片，进而影响生产的合格率。第三点，由于常规扩散通常为炉尾进气，炉口排气，内部气源流动的动力是气体压力，但是从图3上就可以看出，气源进入扩散炉管之后并没有经过一个充分混合的过程，很难保证各个区域的气源浓度都一致，所以可能会影响整体的扩散的均匀性，进而影响成品电池的电性能。
发明内容
本发明的目的在于：提供一种扩散均匀的扩散烧结炉，解决现有扩散烧结炉气源扩散不均匀的问题。
本发明采用的技术方案如下：
一种扩散均匀的扩散烧结炉，包括垂直设置的扩散炉管，扩散炉管外侧设置有隔热层，扩散炉管周围位于扩散炉管与隔热层之间设置有若干加热管，扩散炉管上端安装有扩散炉门，扩散炉管下端中部开设有排气口，扩散炉管下端位于排气口旁还设置有进气口，扩散炉管内位于扩散炉管中部设置有石英舟，石英舟上设置有若干硅片。
进一步地，所述进气口的输出端位于扩散炉管上部。
进一步地，所述扩散炉管的材料为石英管。
综上所述，由于采用了上述技术方案，本发明的有益效果是：
1、本发明中，扩散炉的设计结构与普通扩散炉有明显差别，扩散炉管为垂直结构，利用热对流循环，将扩散炉管内的不同气体充分混合，另外由于有热对流循环，所以整个扩散炉管内的温度更加均匀，对扩散的均匀性有明显改善，相比常规横式扩散炉管有明显优势。
2、本发明中，本扩散炉内的石英舟可以放置在扩散炉管中部，从而可以保证石英舟上的硅片在四个方向得到充分而均匀的加热。
3、本发明中，本扩散炉的进气口的输出端设计在扩散炉管口，即炉管的上部，目的是通入气体前可以在扩散炉管内有一个预热，减少通入气体与扩散炉管内气体的密度和温度差异，减少通入气体出现的下沉，促进温度和气流的稳定。
附图说明
图1为本发明的结构示意图；
图2为本发明的俯视图；
图3为现有技术横式扩散炉管的结构示意图；
图中标记：1-扩散炉门、2-隔热层、3-加热管、4-硅片、5-石英舟、6-排气口、7-进气口、8-扩散炉管。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
一种扩散均匀的扩散烧结炉，包括垂直设置的扩散炉管，扩散炉管外侧设置有隔热层，扩散炉管周围位于扩散炉管与隔热层之间设置有若干加热管，扩散炉管上端安装有扩散炉门，扩散炉管下端中部开设有排气口，扩散炉管下端位于排气口旁还设置有进气口，扩散炉管内位于扩散炉管中部设置有石英舟，石英舟上设置有若干硅片。
进一步地，所述进气口的输出端位于扩散炉管上部。
进一步地，所述扩散炉管的材料为石英管。
本发明在实施过程中，将扩散炉管设计为垂直状态，利用扩散炉管内部四周和中间的温度梯度，上下的密度梯度，在扩散炉管内形成对流，相当于对内部的气体进行搅拌混合，从而达到不同的气体的充分搅拌，使得扩散炉管内各个位置的气体成分达到统一，另外也可以保证炉管内部各个位置的温度的差异最小，进而提高扩散的均匀性，方阻的均匀性。
实施例1
一种扩散均匀的扩散烧结炉，包括垂直设置的扩散炉管，扩散炉管外侧设置有隔热层，扩散炉管周围位于扩散炉管与隔热层之间设置有若干加热管，扩散炉管上端安装有扩散炉门，扩散炉管下端中部开设有排气口，扩散炉管下端位于排气口旁还设置有进气口，扩散炉管内位于扩散炉管中部设置有石英舟，石英舟上设置有若干硅片。通过该设置，扩散炉管为垂直结构，利用热对流循环，将扩散炉管内的不同气体充分混合，另外由于有热对流循环，所以整个扩散炉管内的温度更加均匀，对扩散的均匀性有明显改善，相比常规横式扩散炉管有明显优势。同时本扩散炉内的石英舟可以放置在扩散炉管中部，从而可以保证石英舟上的硅片在四个方向得到充分而均匀的加热。
实施例2
在实施例1的基础上，所述进气口的输出端位于扩散炉管上部。通过该设置，通入气体前可以在扩散炉管内有一个预热，减少通入气体与扩散炉管内气体的密度和温度差异，减少通入气体出现的下沉，促进温度和气流的稳定。
实施例3
在上述实施例的基础上，所述扩散炉管的材料为石英管。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (3)

1.一种扩散均匀的扩散烧结炉，其特征在于，包括垂直设置的扩散炉管(8)，扩散炉管(8)外侧设置有隔热层(2)，扩散炉管(8)周围位于扩散炉管(8)与隔热层(2)之间设置有若干加热管(3)，扩散炉管(8)上端安装有扩散炉门(1)，扩散炉管(8)下端中部开设有排气口(6)，扩散炉管(8)下端位于排气口(6)旁还设置有进气口(7)，扩散炉管(8)内位于扩散炉管(8)中部设置有石英舟(5)，石英舟(5)上设置有若干硅片(4)。
2.按照权利要求1所述的一种扩散均匀的扩散烧结炉，其特征在于，所述进气口(7)的输出端位于扩散炉管(8)上部。
3.按照权利要求1所述的一种扩散均匀的扩散烧结炉，其特征在于，所述扩散炉管(8)的材料为石英管。
CN201910336589.5A 2019-04-25 2019-04-25 一种扩散均匀的扩散烧结炉 Pending CN110010530A (zh)

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CN103618019A (zh) * 2013-08-13 2014-03-05 苏州盛康光伏科技有限公司 一种晶体硅太阳能电池片扩散方法
CN105543955A (zh) * 2016-02-26 2016-05-04 上海华力微电子有限公司 多晶硅制备之立式炉管及其制备方法
CN105908260A (zh) * 2016-05-18 2016-08-31 广东爱康太阳能科技有限公司 一种晶体硅太阳能电池扩散炉
CN106435740A (zh) * 2016-11-11 2017-02-22 桂林电子科技大学 一种立式太阳能硅片扩散炉
CN209785887U (zh) * 2019-04-25 2019-12-13 通威太阳能（成都）有限公司 一种扩散均匀的扩散烧结炉

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