CN109980031A - A kind of texturing slot and monocrystalline silicon process for etching for crystal silicon solar energy battery - Google Patents
A kind of texturing slot and monocrystalline silicon process for etching for crystal silicon solar energy battery Download PDFInfo
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- CN109980031A CN109980031A CN201910331455.4A CN201910331455A CN109980031A CN 109980031 A CN109980031 A CN 109980031A CN 201910331455 A CN201910331455 A CN 201910331455A CN 109980031 A CN109980031 A CN 109980031A
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- groove body
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- energy battery
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 19
- 230000008569 process Effects 0.000 title claims abstract description 18
- 238000005530 etching Methods 0.000 title claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 32
- 230000007246 mechanism Effects 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 239000008367 deionised water Substances 0.000 claims description 20
- 229910021641 deionized water Inorganic materials 0.000 claims description 20
- 238000005554 pickling Methods 0.000 claims description 9
- 238000002791 soaking Methods 0.000 claims description 5
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 2
- 235000008216 herbs Nutrition 0.000 abstract description 15
- 210000002268 wool Anatomy 0.000 abstract description 15
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of texturing slot for crystal silicon solar energy battery and monocrystalline silicon process for etching, it is related to solar cell preparation technology, the present invention for crystal silicon solar energy battery texturing slot include upper end opening groove body, groove body is cylindrical shape, groove body internal diameter is 40-60cm, bottom is the arcwall face toward evagination in groove body, arcwall face depth is h, h=4-6cm, bottom is provided with rabbling mechanism in groove body, groove body bottom is provided with heating element, monocrystalline silicon process for etching uses the above-mentioned texturing slot for crystal silicon solar energy battery, the present invention has structure simple, it can guarantee the temperature and uniform concentration distribution of Woolen-making liquid, the good advantage of the uniformity of monocrystalline silicon battery making herbs into wool flannelette obtained.
Description
Technical field
The present invention relates to solar cell preparation technologies, more particularly to one kind for crystal silicon solar electricity
The texturing slot and monocrystalline silicon process for etching in pond.
Background technique
With the development of China's economic, we increasingly have found our air quality worse and worse, and the root of everything
This reason is exactly that Chinese energy resource structure is unreasonable, and the ratio of fossil fuel is excessively high, for long-range angle, fossil energy
It is non-renewable, sooner or later can be exhausted, from the point of view of at present, the pollution of fossil energy is huge, has generated to national health tight
The influence of weight, so all there is an urgent need to reform energy resource structure for China either from long-range angle and current angle.Common
In several clean energy resourcies, water energy is kind of an inborn energy, is difficult to obtain in water resource region not abundant, wind energy is unstable, core
There can be the danger of leakage, so only distribution of solar energy is extensive, become China and solve to improve the important outlet of clean energy resource ratio.
Crystal-silicon solar cell can be directly changed into solar energy electric energy, and will not generate any pollution in use, at present very
Multinational family will all help solar cell generation technology including China, and fundamentally reduce the dependence to fossil fuel.At present
The monocrystalline process for etching of conventional batteries, most commonly seen is the method for alkali formula making herbs into wool, but the raising mesh of the uniformity of its flannelette
It is preceding to become bottleneck.The uniformity of flannelette will affect silion cell to the reflectivity and transmissivity of spectrum, and then influence the electricity of silion cell
Performance, on the other hand, uniform flannelette is for diffuseing to form uniform PN junction, and the hydrophobicity for increasing silicon wafer also has an impact.Through
Our experiment discovery is crossed, the color distinction of silicon wafer, illustrates flannelette to silicon wafer after the silicon wafer PECVD that uniform flannelette is effectively reduced
The uniform silicon nitride film of formation also have a significant impact.
In the making herbs into wool process of conventional N-type or p type single crystal silicon battery, usually using NaOH, isopropanol, tri- kinds of IPA it is molten
Liquid is formed making herbs into wool flannelette using NaOH after anisotropy caustic corrosion, corrosion, but this chemical reaction by it is many because
The influence of the conditions such as the influence, such as temperature, reactant concentration, product concentration of element, so the flannelette ultimately generated has not
Together, and then it will affect the uniformity of flannelette and generally pass through special texturing slot system in the process for etching of monocrystalline silicon battery
Suede technique, the texturing slot structural design for being currently used for monocrystalline silicon battery is unreasonable, leads to the concentration of Woolen-making liquid in texturing slot
And non-uniform temperature, and it is effectively relatively low using the amount of Woolen-making liquid, the uniformity of monocrystalline silicon battery making herbs into wool flannelette is poor.
Therefore above-mentioned technical problem how is solved, there is very much realistic meaning to those skilled in the art.
Summary of the invention
It is an object of the invention to: do not conform to solve to be currently used for the texturing slot structural design of monocrystalline silicon battery
Reason leads to the concentration and non-uniform temperature of Woolen-making liquid in texturing slot, and effectively relatively low using the amount of Woolen-making liquid, monocrystalline silicon battery system
The technical problem of the uniformity difference of suede flannelette, the present invention provide a kind of texturing slot and monocrystalline silicon for crystal silicon solar energy battery
Process for etching.
The present invention specifically uses following technical scheme to achieve the goals above:
A kind of texturing slot for crystal silicon solar energy battery, the groove body including upper end opening, groove body are cylindrical shape, groove body
Internal diameter is 40-60cm, and bottom is the arcwall face toward evagination in groove body, and arcwall face depth is h, h=4-6cm, and bottom is set in groove body
It is equipped with rabbling mechanism, groove body bottom is provided with heating element.
Further, groove body internal diameter is 50cm, arcwall face depth h=5cm.
Further, rabbling mechanism is magnetic control rotor.
Further, heating element is resistive heater.
Further, the grid being provided in groove body above rabbling mechanism is provided with the flower equipped with silicon wafer in grid
Basket.
A kind of monocrystalline silicon process for etching, comprising the following steps:
S1: first removing silicon wafer damaging layer, with the spot on NaOH solution cleaning silicon chip surface, then with deionized water to silicon wafer into
Row rinsing；
S2: the obtained silicon wafer of above-mentioned steps S1 being put into the gaily decorated basket, then the gaily decorated basket is put into the texturing slot for filling Woolen-making liquid,
Texturing slot uses a kind of above-mentioned texturing slot for crystal silicon solar energy battery, then starts rabbling mechanism, and pass through heating
Element heats up to Woolen-making liquid, so that Woolen-making liquid temperature is maintained 80 DEG C, silicon wafer soaking time is 20min；
S3: taking out the silicon wafer that above-mentioned steps S2 is obtained, and first passes through deionized water rinsing to the silicon wafer, then carry out pickling, then
It is rinsed by deionized water, then carries out pickling, then rinsed by deionized water, then carry out pickling, floated finally by deionized water
It washes.
Further, the proportion of the Woolen-making liquid used in step s 2 includes the component of following content: 39% concentration
NaOH solution 6L, IPA solution 7L, flocking additive 500mL, deionized water 112.5L.
Beneficial effects of the present invention are as follows:
1, by groove body it is first cylindrical shape, guarantees that the rotation of Woolen-making liquid is uniform, and groove body internal diameter is 40-60cm, is added
Thermal element can be transferred heat to quickly in Woolen-making liquid in making herbs into wool trench bottom, and since there is the rotation of rabbling mechanism in lower section
Effect, quickly can reach the consistent of upper and lower surface temperature for solution, to reduce the temperature difference of silicon chip edge and central area
Not, it under the mating reaction of heating element and rabbling mechanism, so that the concentration and Temperature Distribution of Woolen-making liquid are relatively uniform, improves
The uniformity of silicon wafer suede, while bottom in groove body is arranged to arcwall face, increase groove body inner space, effectively uses Woolen-making liquid
Amount up to 126L or so, arcwall face depth is excessive, be unfavorable for transmit heat, arcwall face depth is too small, and inner space is small, therefore
Arcwall face depth is arranged to 4-6cm, maximumlly improves groove body inner space under conditions of guaranteeing and quickly transmitting heat,
Guarantee the amount for effectively using Woolen-making liquid.
2, making herbs into wool is carried out for the texturing slot of crystal silicon solar energy battery using the present invention in process for etching, and stringent
Woolen-making liquid temperature is controlled at 80 DEG C, soaking time 20min, then rational technology is washed, altogether using deionized water rinsing acid adding
In triplicate, deionized water rinsing is finally carried out again, and making herbs into wool effect is good, the uniformity of monocrystalline silicon battery making herbs into wool flannelette obtained
It is good.It is matched using new Woolen-making liquid, optimizes making herbs into wool effect.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the texturing slot for crystal silicon solar energy battery of the present invention.
Appended drawing reference: 1- groove body, 2- arcwall face, 3- rabbling mechanism, 4- heating element, 5- grid, the 6- gaily decorated basket.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention, i.e., described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is logical
The component for the embodiment of the present invention being often described and illustrated herein in the accompanying drawings can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
It should be noted that the relational terms of term " first " and " second " or the like be used merely to an entity or
Operation is distinguished with another entity or operation, and without necessarily requiring or implying between these entities or operation, there are any
This actual relationship or sequence.Moreover, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that include a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described
There is also other identical elements in the process, method, article or equipment of element.
Feature and performance of the invention are described in further detail with reference to embodiments.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of texturing slots for crystal silicon solar energy battery, including upper end opening
Groove body 1, groove body 1 are cylindrical shape, and 1 internal diameter of groove body is 40-60cm, and bottom is the arcwall face 2 toward evagination in groove body 1, and arcwall face 2 is deep
Spending is h, h=4-6cm, and bottom is provided with rabbling mechanism 3 in groove body 1, and 1 bottom of groove body is provided with heating element 4.
It is first cylindrical shape by groove body in the present embodiment, guarantees that the rotation of Woolen-making liquid is uniform, and groove body internal diameter is
40-60cm, heating element can be transferred heat to quickly in Woolen-making liquid in making herbs into wool trench bottom, and since there is stirring in lower section
Solution quickly can be reached the consistent of upper and lower surface temperature, to reduce silicon chip edge and center by the rotary action of mechanism
The temperature difference in domain, under the mating reaction of heating element and rabbling mechanism, so that the concentration and Temperature Distribution of Woolen-making liquid compare
Uniformly, the uniformity of silicon wafer suede is improved, while bottom in groove body is arranged to arcwall face, increases groove body inner space, has
For effect using the amount of Woolen-making liquid up to 126L or so, arcwall face depth is excessive, is unfavorable for transmitting heat, arcwall face depth is too small, interior
Portion space is small, therefore arcwall face depth is arranged to 4-6cm, maximumlly improves under conditions of guaranteeing and quickly transmitting heat
Groove body inner space guarantees the amount for effectively using Woolen-making liquid.
Embodiment 2
As shown in Figure 1, the present embodiment is to be further optimized on the basis of embodiment 1, and specifically, 1 internal diameter of groove body
For 50cm, 2 depth h=5cm of arcwall face, most it is able to satisfy quickly transmitting heat and guarantees the condition of groove body inner space, blender
Structure 3 is magnetic control rotor, and at low cost, mixing effect is good, and heating element 4 is resistive heater, and heating rate is fast, setting in groove body 1
There is the grid 5 for being located at 3 top of rabbling mechanism, is provided with the gaily decorated basket 6 equipped with silicon wafer in grid 5.
Embodiment 3
As shown in Figure 1, the present embodiment provides a kind of monocrystalline silicon process for etching, comprising the following steps:
S1: first removing silicon wafer damaging layer, with the spot on NaOH solution cleaning silicon chip surface, then with deionized water to silicon wafer into
Row rinsing；
S2: the obtained silicon wafer of above-mentioned steps S1 is put into the gaily decorated basket 6, then the gaily decorated basket 6 is put into the texturing slot for filling Woolen-making liquid
Interior, texturing slot uses a kind of above-mentioned texturing slot for crystal silicon solar energy battery, then starts rabbling mechanism 3, and pass through
Heating element 4 heats up to Woolen-making liquid, so that Woolen-making liquid temperature is maintained 80 DEG C, silicon wafer soaking time is 20min；
S3: taking out the silicon wafer that above-mentioned steps S2 is obtained, and first passes through deionized water rinsing to the silicon wafer, then carry out pickling, then
It is rinsed by deionized water, then carries out pickling, then rinsed by deionized water, then carry out pickling, floated finally by deionized water
It washes.
Further, the proportion of the Woolen-making liquid used in step s 2 includes the component of following content: 39% concentration
NaOH solution 6L, IPA solution 7L, flocking additive 500mL, deionized water 112.5L.
In the present embodiment, in process for etching using the texturing slot for crystal silicon solar energy battery in embodiment 1 come
Carry out making herbs into wool, and strict control Woolen-making liquid temperature is at 80 DEG C, soaking time 20min, rational technology, then using deionization
Water rinsing acid adding is washed, and altogether in triplicate, finally carries out deionized water rinsing again, making herbs into wool effect is good, monocrystalline silicon battery system obtained
The uniformity of suede flannelette is good.It is matched using new Woolen-making liquid, optimizes making herbs into wool effect.
Silicon wafer after making herbs into wool is diffused, wet etching, plated film, silk-screen printing and burning using conventional single silicon technology
Knot, can be prepared by solar battery.
The above, only presently preferred embodiments of the present invention, are not intended to limit the invention, patent protection model of the invention
It encloses and is subject to claims, it is all to change with equivalent structure made by specification and accompanying drawing content of the invention, similarly
It should be included within the scope of the present invention.
Claims (7)
1. a kind of texturing slot for crystal silicon solar energy battery, the groove body (1) including upper end opening, which is characterized in that groove body
It (1) is cylindrical shape, groove body (1) internal diameter is 40-60cm, and groove body (1) interior bottom is the arcwall face (2) toward evagination, and arcwall face (2) is deep
Degree is h, h=4-6cm, and groove body (1) interior bottom is provided with rabbling mechanism (3), and groove body (1) bottom is provided with heating element (4).
2. a kind of texturing slot for crystal silicon solar energy battery according to claim 1, which is characterized in that groove body (1)
Internal diameter is 50cm, arcwall face (2) depth h=5cm.
3. a kind of texturing slot for crystal silicon solar energy battery according to claim 1 or 2, which is characterized in that stirring
Mechanism (3) is magnetic control rotor.
4. a kind of texturing slot for crystal silicon solar energy battery according to claim 1 or 2, which is characterized in that heating
Element (4) is resistive heater.
5. a kind of texturing slot for crystal silicon solar energy battery according to claim 3, which is characterized in that groove body (1)
The grid (5) being inside provided with above rabbling mechanism (3) is provided with the gaily decorated basket (6) equipped with silicon wafer in grid (5).
6. a kind of monocrystalline silicon process for etching, which comprises the following steps:
S1: first removing silicon wafer damaging layer, floats with the spot on NaOH solution cleaning silicon chip surface, then with deionized water to silicon wafer
It washes；
S2: the obtained silicon wafer of above-mentioned steps S1 is put into the gaily decorated basket (6), then the gaily decorated basket (6) is put into the texturing slot for filling Woolen-making liquid
Interior, then texturing slot starts blender using a kind of texturing slot for crystal silicon solar energy battery as claimed in claim 5
Structure (3), and heated up by heating element (4) to Woolen-making liquid, so that Woolen-making liquid temperature is maintained 80 DEG C, silicon wafer soaking time is
20min；
S3: taking out the silicon wafer that above-mentioned steps S2 is obtained, and first passes through deionized water rinsing to the silicon wafer, then carry out pickling, then pass through
Deionized water rinsing, then pickling is carried out, then rinse by deionized water, then carry out pickling, it is rinsed finally by deionized water.
7. a kind of monocrystalline silicon process for etching according to claim 6, which is characterized in that the Woolen-making liquid used in step s 2
Proportion include following content component: NaOH solution 6L, the IPA solution 7L of 39% concentration, flocking additive 500mL, go from
Sub- water 112.5L.
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| CN201910331455.4A CN109980031A (en) | 2019-04-23 | 2019-04-23 | A kind of texturing slot and monocrystalline silicon process for etching for crystal silicon solar energy battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341879A (en) * | 2020-01-07 | 2020-06-26 | 通威太阳能(眉山)有限公司 | Method for manufacturing crystalline silicon solar cell and crystalline silicon solar cell |
| CN113690331A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Back contact type high-light-efficiency photovoltaic cell texturing device |
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| CN108411364A (en) * | 2018-04-03 | 2018-08-17 | 锦州华昌光伏科技有限公司 | A kind of process for etching of antiradar reflectivity monocrystalline silicon |
| CN108831960A (en) * | 2018-06-20 | 2018-11-16 | 通威太阳能（安徽）有限公司 | A kind of novel monocrystalline silicon texturing slot and its etching method |
| CN209561425U (en) * | 2019-04-23 | 2019-10-29 | 通威太阳能（成都）有限公司 | A kind of texturing slot for crystal silicon solar energy battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111341879A (en) * | 2020-01-07 | 2020-06-26 | 通威太阳能(眉山)有限公司 | Method for manufacturing crystalline silicon solar cell and crystalline silicon solar cell |
| CN113690331A (en) * | 2021-08-11 | 2021-11-23 | 浙江中晶新能源股份有限公司 | Back contact type high-light-efficiency photovoltaic cell texturing device |
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