CN109979808A - 一种减薄碳化硅片的方法、装置及其应用 - Google Patents
一种减薄碳化硅片的方法、装置及其应用 Download PDFInfo
- Publication number
- CN109979808A CN109979808A CN201910194173.4A CN201910194173A CN109979808A CN 109979808 A CN109979808 A CN 109979808A CN 201910194173 A CN201910194173 A CN 201910194173A CN 109979808 A CN109979808 A CN 109979808A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- carbide plate
- module
- film
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 180
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 179
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000002253 acid Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 230000007797 corrosion Effects 0.000 claims abstract description 34
- 238000005260 corrosion Methods 0.000 claims abstract description 34
- 230000001681 protective effect Effects 0.000 claims abstract description 34
- 230000008021 deposition Effects 0.000 claims abstract description 28
- 238000000227 grinding Methods 0.000 claims abstract description 25
- 230000004044 response Effects 0.000 claims abstract description 25
- 238000005406 washing Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000011010 flushing procedure Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 238000010511 deprotection reaction Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000007654 immersion Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000007781 pre-processing Methods 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 36
- 239000010410 layer Substances 0.000 abstract description 36
- 239000010703 silicon Substances 0.000 abstract description 36
- 229910052710 silicon Inorganic materials 0.000 abstract description 36
- 239000002344 surface layer Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 70
- 229910052782 aluminium Inorganic materials 0.000 description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 29
- 239000004411 aluminium Substances 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 238000001035 drying Methods 0.000 description 11
- 230000009467 reduction Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910003978 SiClx Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 241001062009 Indigofera Species 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000003631 expected effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910194173.4A CN109979808B (zh) | 2019-03-14 | 2019-03-14 | 一种减薄碳化硅片的方法、装置及其应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910194173.4A CN109979808B (zh) | 2019-03-14 | 2019-03-14 | 一种减薄碳化硅片的方法、装置及其应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109979808A true CN109979808A (zh) | 2019-07-05 |
CN109979808B CN109979808B (zh) | 2021-04-06 |
Family
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Family Applications (1)
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CN201910194173.4A Active CN109979808B (zh) | 2019-03-14 | 2019-03-14 | 一种减薄碳化硅片的方法、装置及其应用 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111584353A (zh) * | 2020-04-17 | 2020-08-25 | 深圳方正微电子有限公司 | 碳化硅晶圆减薄方法 |
CN113802184A (zh) * | 2021-08-25 | 2021-12-17 | 东莞市天域半导体科技有限公司 | 一种快速去除碳化硅外延过程中晶片背面沉积物的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102214565A (zh) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | 一种对碳化硅晶片进行减薄的方法 |
CN105470122A (zh) * | 2015-11-20 | 2016-04-06 | 成都嘉石科技有限公司 | 一种SiC减薄方法 |
US20170025275A1 (en) * | 2015-07-21 | 2017-01-26 | Disco Corporation | Wafer thinning method |
CN207572370U (zh) * | 2017-11-02 | 2018-07-03 | 北京世纪金光半导体有限公司 | 一种碳化硅功率芯片背面减薄和欧姆接触方法制备的产品 |
CN108565244A (zh) * | 2018-01-11 | 2018-09-21 | 上海华虹宏力半导体制造有限公司 | 减薄工艺的揭膜方法 |
-
2019
- 2019-03-14 CN CN201910194173.4A patent/CN109979808B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102214565A (zh) * | 2010-04-09 | 2011-10-12 | 中国科学院微电子研究所 | 一种对碳化硅晶片进行减薄的方法 |
US20170025275A1 (en) * | 2015-07-21 | 2017-01-26 | Disco Corporation | Wafer thinning method |
CN105470122A (zh) * | 2015-11-20 | 2016-04-06 | 成都嘉石科技有限公司 | 一种SiC减薄方法 |
CN207572370U (zh) * | 2017-11-02 | 2018-07-03 | 北京世纪金光半导体有限公司 | 一种碳化硅功率芯片背面减薄和欧姆接触方法制备的产品 |
CN108565244A (zh) * | 2018-01-11 | 2018-09-21 | 上海华虹宏力半导体制造有限公司 | 减薄工艺的揭膜方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111584353A (zh) * | 2020-04-17 | 2020-08-25 | 深圳方正微电子有限公司 | 碳化硅晶圆减薄方法 |
CN113802184A (zh) * | 2021-08-25 | 2021-12-17 | 东莞市天域半导体科技有限公司 | 一种快速去除碳化硅外延过程中晶片背面沉积物的方法 |
CN113802184B (zh) * | 2021-08-25 | 2022-06-28 | 东莞市天域半导体科技有限公司 | 一种快速去除碳化硅外延过程中晶片背面沉积物的方法 |
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CN109979808B (zh) | 2021-04-06 |
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Inventor after: Lin Xinnan Inventor before: Lin Xinnan Inventor before: Liu Meihua |
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Application publication date: 20190705 Assignee: Shenzhen jinwangxin Semiconductor Technology Co.,Ltd. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980004714 Denomination of invention: A method, device, and application for thinning silicon carbide sheets Granted publication date: 20210406 License type: Common License Record date: 20240422 Application publication date: 20190705 Assignee: SHENZHEN ZHICHUANGGU TECHNOLOGY Co.,Ltd. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980004713 Denomination of invention: A method, device, and application for thinning silicon carbide sheets Granted publication date: 20210406 License type: Common License Record date: 20240422 Application publication date: 20190705 Assignee: ZHUHAI FILLGOLD TECHNOLOGY CO.,LTD. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980004710 Denomination of invention: A method, device, and application for thinning silicon carbide sheets Granted publication date: 20210406 License type: Common License Record date: 20240422 |