CN109976411B - 部件的热控制装置、相关电子系统及平台 - Google Patents

部件的热控制装置、相关电子系统及平台 Download PDF

Info

Publication number
CN109976411B
CN109976411B CN201811601696.8A CN201811601696A CN109976411B CN 109976411 B CN109976411 B CN 109976411B CN 201811601696 A CN201811601696 A CN 201811601696A CN 109976411 B CN109976411 B CN 109976411B
Authority
CN
China
Prior art keywords
temperature
control device
converter
cooling module
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811601696.8A
Other languages
English (en)
Other versions
CN109976411A (zh
Inventor
罗曼·霍多
克劳德·萨诺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Publication of CN109976411A publication Critical patent/CN109976411A/zh
Application granted granted Critical
Publication of CN109976411B publication Critical patent/CN109976411B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/1906Control of temperature characterised by the use of electric means using an analogue comparing device
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25BREFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00Machines, plants or systems, using electric or magnetic effects
    • F25B21/02Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C21/00Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
    • G01C21/10Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
    • G01C21/12Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning
    • G01C21/16Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning by integrating acceleration or speed, i.e. inertial navigation
    • G01C21/18Stabilised platforms, e.g. by gyroscope
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00Details of instruments
    • G01P1/02Housings
    • G01P1/023Housings for acceleration measuring devices
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/1919Control of temperature characterised by the use of electric means characterised by the type of controller
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/20Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25BREFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/02Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
    • F25B2321/021Control thereof
    • F25B2321/0212Control thereof of electric power, current or voltage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201Structure
    • H01L2224/32012Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Nonlinear Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Power Conversion In General (AREA)
  • Control Of Electric Motors In General (AREA)
  • Control Of Linear Motors (AREA)
  • Control Of Eletrric Generators (AREA)

Abstract

本发明公开了部件的热控制装置、相关电子系统及平台,其中,所述控制装置(16)包括:电源;能够将温度变化转换为电阻变化的转换器;冷却模块,所述冷却模块包括两个面,第一面处于第一温度和第二面处于第二温度,所述第一温度和第二温度之差取决于所述冷却模块的供电电流,所述第一面与所述部件相接触,所述冷却模块、所述转换器及所述电源在电学上设置为使得所述转换器的供电电流随温度的升高而减小,而所述冷却模块的供电电流保持恒定。

Description

部件的热控制装置、相关电子系统及平台
技术领域
本发明涉及一种部件的热控制装置。本发明还涉及一种电子系统以及包括该系统的平台。
背景技术
在航空电子领域,飞行参数测量是一项非常重要的测量以确保飞机切实按照轨迹(通常为预设轨迹)飞行。飞行参数的测量是采用惯性传感器完成的。
然而,由于飞机在飞行期间会发生温度变化,因此惯性传感器将因相应温度梯度而发生偏差,从而给飞行参数的测量造成不良影响。因此,需要对电子系统,尤其高精度惯性传感器的温度进行监测。
为了对电子系统,尤其振荡器的温度进行控制,已知需要将部件加热至高温。
然而,这种控制方式对电子系统的性能和可靠性有害。此外,该控制方式需要使用温度调节电子器件,其不但价格昂贵,而且还可能影响测量系统的可靠性和体积。
因此,需要一种可靠性更高且体积更小的用于控制部件温度的控制装置。
发明内容
为了实现这一目的,本发明提出一种部件的热控制装置,该控制装置包括:电源;能够将温度变化转换为电阻变化的转换器;以及冷却模块,该冷却模块包括两个面,第一面处于第一温度,第二面处于第二温度,所述第一温度和所述第二温度之差取决于所述冷却模块的供电电流,所述第一面与所述部件接触,所述冷却模块、所述转换器及所述电源在电学上设置为使得所述转换器的供电电流随温度升高而减小,而所述冷却模块的供电电流保持不变。
根据具体实施方式,所述控制装置包括以下一项或多项特征,这些特征既可视为相互独立的特征,也可以任何技术上可行的方式相互组合:
所述第二面设置为保持恒温;
所述冷却模块和所述转换器并联于所述电源;
所述转换器的电阻随温度的升高而变大;
所述转换器能够将温度的升高转换为电阻变化;
所述转换器为热敏电阻器;
所述控制装置为自调节装置;
所述部件包括传感器和保护壳体,该保护壳体尤其为陶瓷保护壳体,所述第一面与所述传感器相接触;
所述部件包括传感器和保护壳体,该保护壳体尤其为陶瓷保护壳体,所述第一面与该保护壳体相接触;
所述转换器和所述冷却模块的两个面均由陶瓷制成;
所述第二面由PTC类型的陶瓷制成;
所述传感器为微机电系统,尤其惯性微机电系统,如加速度计或陀螺仪。
本发明还提出一种电子系统,所述电子系统包括部件和所述部件的热控制装置,所述热控制装置为以上所述的热控制装置。
本发明还提出一种包括以上所述的电子系统的平台。
附图说明
通过阅读以下对本发明实施方式的描述,本发明的其他特征和优点将变得显而易见,该描述仅作为例示且参考附图,附图中:
图1:包括电子系统的平台的示意图;
图2:例示电子系统示意图;
图3:例示冷却模块示意图;
图4:另一例示电子系统示意图。
具体实施方式
图1所示为平台10。
平台10既可以为车辆或飞行器情形中的移动平台,也可以为建筑物情形中的固定平台。
在图1所示的情形中,平台10为飞行器。
在定义上,飞行器为一种能够升空并在地球大气层中的某个高度移动的运输工具。
飞行器例如包括飞机或直升机。
平台10包括电子系统12,电子系统12包括部件14和热控制装置16。
图2所示为例示电子系统12。
在该例中,部件14包括传感器18和保护壳体20。
图示传感器18为微机电系统。
该微机电系统是指通常以MEMS指代的系统,MEMS为英文单词“Microelectromechanical System”(微机电系统)的缩写。
在定义上,微机电系统是指含有符合以下条件的一个或多个机械元件的微系统:以电能为动力源执行传感器功能;具有至少一个微观尺寸结构。
就说明目的而言,传感器18为惯性微机电系统。
此类传感器18可实施飞行参数的测量。
传感器18例如为加速度计或陀螺仪。
保护壳体20为用于针对外部环境,对传感器18加以保护的壳体。
在图示情形中,保护壳体20包括封板21和基座23。
封板21和基座23彼此连接,从而使得保护壳体20在截面图中呈现为框形。
根据本实施例,保护壳体20,尤其基座23由陶瓷制成。
控制装置16可保证传感器18基本保持同一温度,而且该温度可低于环境温度。
由于控制装置16不设温度控制电子器件,因此控制装置16为用于保持传感器18温度的自调节装置。
控制装置16包括电源22,转换器24和冷却模块26。
根据本实施例,电源22能够恒流供电。就说明目的而言,电源22为电流发生器。
电源22经第一连线25A向转换器24供电,并经第二连线25B向冷却模块26供电。
根据一种未图示的替代方案,电源22为由两个单独电源组成的分布式电源,其中,一个单独电源与转换器24连接,另一单独电源与冷却模块26连接。
转换器24能够将温度变化转换为电阻变化。
在该情况下,转换器24通称为PTC转换器。PTC为“Positive TemparatureCoefficient”(正温度系数)的缩写。
此外,转换器24为一种电阻随温度变化的器件。
根据本实施例,转换器24为热敏电阻器。
热敏电阻器的电阻可随温度发生相对显著的变化,该变化能够在较窄的温度范围(一般为0℃~100℃)内以不规则或突然的方式发生。
该热敏电阻器例如由金属氧化物或复合材料制成。
在一种替代方案中,转换器24为热电阻器。
该热电阻器内的特定金属(银、铜、镍、金、铂、钨、钛)的电阻率以规则的方式随温度的升高而增大。
冷却模块26具有两个面28和30。
第一面28处于第一温度T1。
第一面28与部件14接触。
更具体而言,在图2示例中,第一面28与传感器18接触。
为了便于对传感器18的温度进行控制,第一面28具有与传感器18完全接触的表面。
第二面30处于第二温度T2。
第二面30的表面大小与第一面28的表面大小相同。
根据本实施例,第二面30设置为保持恒温。
就说明目的而言,第二面30与转换器24接触。
根据图2示例,转换器24具有表面尺寸与第二面30表面尺寸相同的面。
第一温度T1和第二温度T2之差取决于冷却模块26的供电电流。
此两者之间的关系取决于多个参数,例如冷却模块26的制造材料或者供电电流的幅度。
优选地,上述两者之间的关系为递增关系。
在实际应用中,第一温度T1和第二温度T2之差的绝对值大于30℃,优选大于40℃。
当第一温度T1和第二温度T2之差取决于冷却模块26的供电电流时,冷却模块26称为珀尔帖(Peltier)模块,其原因在于冷却模块26采用Peltier效应。
图3截面图更加详细地示出了冷却模块26的一例。
在图示实施例中,冷却模块26包括底板36,顶板38,连接体32和导电轨34。
底板36提供上述第二面30,顶板38提供上述第一面28。
四个连接体32均与顶板38接触。
每一连接体32均为PN结。
在半导体物理学中,PN结是指掺杂类型突然从P型掺杂转变为N型掺杂的晶体区域。当P型掺杂区与N型掺杂区接触时,界面两侧的电子和空穴自发扩散,从而形成自由载流子浓度实际上为零的耗尽区。如此,即可获得二极管的效果。
因此,每一连接体32内的电极移动起到与热力压缩机中传热流体相同的作用。
如此,使得连接体32在空间上设置为与顶板38的大部分(大于70%)发生热接触。
在图示实施例中,连接体32相对于第一面28均匀分布,以实现顶板38的均匀冷却。
导电轨34与底板36相接触。
此外,在图示实施例中,导电轨34的数目为两个,而且这两个导电轨中的每一个与两个连接体32接触。
电源22经第一连线25A对冷却模块26进行恒流供电。冷却模块26的功耗恒定。
在工作过程中,当温度例如因飞机情形中的平台10处于飞行状态而发生变化时,转换器24的电阻也发生变化。
举例而言,转换器24的电阻随温度升高而增大。
相应地,转换器24的供电电流随环境温度的升高而减小,从而使转换器24保持恒温,并进而使得冷却模块26的第二面30也保持恒温。
冷却模块26由固定功率供电,从而使得第一面28和第二面30之间的温度差随时保持恒定。由于第二面30保持恒温,而且第一面28和第二面30之间的温度差保持恒定,因此第一面28也保持恒温。由于转换器24的电阻随温度的变化而变化,其功耗也发生变化,从而使第一面28保持恒温。
相反地,当温度下降时,转换器24的电阻相应减小。
如此,转换器24的供电电流增大,从而使得第二面30保持同一温度。由于第一温度T1和第二温度T2之差保持恒定,而且冷却模块24的供电功率保持恒定,因此第一温度T1固定不变。
这种方式可使得部件14的传感器18实现自主温度调节。
控制装置16可避免与传感器18测量当中的温度相关的偏差。
换句话说,通过使用控制装置16,可在平台10的工作过程中使得电子系统12的性能和可靠性保持不变。
与仅使用热敏电阻器在高温下将传感器18的温度保持不变的情形相比,本发明传感器18之所以具有更高可靠性的原因在于,冷却模块26能够确保传感器18具有更低的工作温度。
由于这一相对较低的温度的获得无需采用温度调节电子器件,因此控制装置16的成本较低,而且不会影响电子系统12的可靠性和体积。
图4所示为另一实施方式。
图4实施方式采用与图2实施方式相同的附图标记,因此不再赘述。以下,仅描述两者之间的差异。
在该情形中,第一面28与基座23相接触,而非与传感器18接触。
在工作过程中,当温度例如因飞机情形中的平台10处于飞行状态而发生变化时,转换器24的电阻也发生变化。
举例而言,转换器24的电阻随温度升高而增大。
相应地,转换器24的供电电流减小,从而使得第二面30的温度保持不变。由于第一温度T1和第二温度T2之差保持恒定,因此第一温度T1保持恒定。
这使得基座23得到冷却,并进而通过热传导,使得传感器18也得到冷却。
由此可见,图4实施方式具有与图2实施方式相同的优点,因此不再赘述。
根据一种替代实施方式,冷却模块26包括陶瓷支撑件,转换器24即为该支撑件。
如此,可实现紧凑性。
根据另一替代实施方式,转换器24能够将温度的上升变化转换为电阻的上升。
优选地,转换器24和冷却模块26的所述两个面28和30均由陶瓷制成。更具体而言,“所述两个面28和30均由陶瓷制成”这一说法是指底板36和顶板38均由陶瓷制成。
优选地,第二面30(即底板36)由PTC类型的陶瓷制成。在定义上,PTC陶瓷是指能够将温度变化转换为电阻变化的陶瓷。在该实施方式中,第二面30还用作转换器24。
如此,可使得控制装置16更加易于制造。
作为补充或替代,电源22为电压发生器。
概括性而言,冷却模块26、转换器24和电源22在电学上设置为使得转换器24的供电电流随温度升高而减小,而冷却模块26的供电电流保持不变。
换句话说,冷却模块26的供电电流值不随时间变化。
此外,热控制装置26可避免进行有源温度控制。
本发明涉及所有技术上可行的实施方式的组合。

Claims (11)

1.一种部件(14)的热控制装置(16),其特征在于,所述控制装置(16)包括:
-电源(22);
-能够将温度变化转换为电阻变化的转换器(24);
-冷却模块(26),所述冷却模块包括两个面(28,30),其中第一面(28)处于第一温度(T1),第二面(30)处于第二温度(T2),所述第一温度(T1)和所述第二温度(T2)之差取决于所述冷却模块(26)的供电电流,所述第一面(28)与所述部件(14)相接触,
所述冷却模块(26)、所述转换器(24)及所述电源(22)在电学上设置为使得所述转换器(24)的供电电流随温度的升高而减小,并且所述冷却模块(26)的供电电流保持恒定,
其中,所述冷却模块(26)的所述第二面(30)与所述转换器(24)相接触。
2.如权利要求1所述的热控制装置,其特征在于,所述第二面(30)设置为保持恒温。
3.如权利要求1或2所述的热控制装置,其特征在于,所述冷却模块(26)和所述转换器(24)并联于所述电源(22)。
4.如权利要求1或2所述的热控制装置,其特征在于,所述转换器(24)的电阻随温度的升高而变大。
5.如权利要求1或2所述的热控制装置,其特征在于,所述控制装置(16)为自调节装置。
6.如权利要求1或2所述的热控制装置,其特征在于,所述部件(14)包括传感器(18)和保护壳体(20),所述第一面(28)与所述传感器(18)或所述保护壳体相接触。
7.如权利要求1或2所述的热控制装置,其特征在于,所述转换器(24)和所述冷却模块(26)的所述两个面(28,30)均由陶瓷制成。
8.如权利要求7所述的热控制装置,其特征在于,所述第二面(30)由PTC类型的陶瓷制成。
9.如权利要求8所述的热控制装置,其特征在于,所述部件(14)包括传感器(18)和保护壳体(20),所述第一面(28)与所述传感器(18)或所述保护壳体相接触,所述传感器(18)为微机电系统。
10.一种电子系统(12),其特征在于,包括:
-部件(14);以及
-所述部件(14)的热控制装置(16),所述热控制装置(16)为权利要求1或2所述的热控制装置。
11.一种包括如权利要求10所述的电子系统(12)的平台(10)。
CN201811601696.8A 2017-12-28 2018-12-26 部件的热控制装置、相关电子系统及平台 Active CN109976411B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1701388 2017-12-28
FR1701388A FR3076395B1 (fr) 2017-12-28 2017-12-28 Dispositif de controle thermique d'un composant, systeme electronique et plate-forme associes

Publications (2)

Publication Number Publication Date
CN109976411A CN109976411A (zh) 2019-07-05
CN109976411B true CN109976411B (zh) 2021-11-12

Family

ID=62143228

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811601696.8A Active CN109976411B (zh) 2017-12-28 2018-12-26 部件的热控制装置、相关电子系统及平台

Country Status (5)

Country Link
US (1) US11300332B2 (zh)
CN (1) CN109976411B (zh)
DE (1) DE102018133643A1 (zh)
FR (1) FR3076395B1 (zh)
NO (1) NO20181675A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110874105A (zh) * 2019-11-20 2020-03-10 中国船舶重工集团公司第七0七研究所 一种保持惯导系统惯性组件恒定空间温度场的温补结构
CN112556235B (zh) * 2020-11-25 2022-04-15 杭州大和热磁电子有限公司 一种多回路微型半导体制冷芯片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2317018B (en) * 1996-08-29 2000-08-30 Gibert Francis Jean Paul A Low-Drift Accelerometer Component
CN101297600A (zh) * 2005-06-24 2008-10-29 开利公司 用于控制热电系统的装置
CN101463984A (zh) * 2007-12-17 2009-06-24 富士迈半导体精密工业(上海)有限公司 照明装置
CN102447216A (zh) * 2010-10-12 2012-05-09 奥兰若技术有限公司 组件温度控制
CN102656533A (zh) * 2009-09-25 2012-09-05 松下电器产业株式会社 帕尔贴元件的冷却控制电路

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2518282B1 (fr) * 1981-12-16 1985-09-06 Paturel Michel Procede pour controler la temperature d'un appareil et appareils mettant en oeuvre un tel procede
US5117638A (en) * 1991-03-14 1992-06-02 Steve Feher Selectively cooled or heated seat construction and apparatus for providing temperature conditioned fluid and method therefor
JPH07288351A (ja) * 1994-04-19 1995-10-31 Fujitsu Ltd ペルチェ制御回路及びその素子構造
US5704213A (en) * 1995-08-15 1998-01-06 Raytheon E-Systems, Inc. Method and apparatus for controlling the temperature of a device using independent multi-stage thermoelectric coolers
US5687573A (en) * 1996-06-06 1997-11-18 Shih; Ping-Ho Thermal control device for cooling or heating parked vehicles
US6890492B1 (en) * 1998-08-13 2005-05-10 Symyx Technologies, Inc. Parallel reactor with internal sensing and method of using same
US6443003B1 (en) * 2000-11-14 2002-09-03 International Business Machines Corporation Thermoelectric air flow sensor
US6557353B1 (en) * 2002-01-25 2003-05-06 Michael A. Fusco Apparatus and method for cooling an object
US6487864B1 (en) * 2002-04-23 2002-12-03 Honeywell International Inc. Cyrogenic inertial micro-electro-mechanical system (MEMS) device
JP4108400B2 (ja) * 2002-07-24 2008-06-25 富士通株式会社 電界吸収型光変調器を備えた半導体レーザモジュールの駆動回路および駆動方法
US6711904B1 (en) * 2003-03-06 2004-03-30 Texas Instruments Incorporated Active thermal management of semiconductor devices
JP4307130B2 (ja) * 2003-04-08 2009-08-05 キヤノン株式会社 露光装置
JP5148815B2 (ja) * 2005-01-20 2013-02-20 住友電気工業株式会社 光送信モジュール
CN101304691B (zh) * 2005-11-11 2011-10-26 株式会社日立医药 超声波探头及超声波诊断装置
JP4695989B2 (ja) * 2006-01-27 2011-06-08 富士通株式会社 差動m位相偏移変調信号の復調用干渉計
CN101611503B (zh) * 2007-01-10 2012-12-26 阿美里根公司 热电装置
EP2375191A1 (en) * 2008-12-11 2011-10-12 Lamos Inc. Thermo-electric structure
JP5481977B2 (ja) * 2009-07-10 2014-04-23 富士通株式会社 温度制御方法、温度制御装置及び光デバイス
DE102009058673A1 (de) * 2009-12-16 2011-06-22 Behr GmbH & Co. KG, 70469 Thermoelektrischer Wärmetauscher
GB2501011A (en) * 2010-11-08 2013-10-09 Bg Res Ltd Heating and cooling low volume biological reaction vessels
US20120198859A1 (en) * 2011-02-03 2012-08-09 Iberica del Espacio, S.A., Thermal control device
WO2014022419A1 (en) * 2012-07-30 2014-02-06 Marlow Industries, Inc. Thermoelectric personal comfort controlled bedding
KR101438949B1 (ko) * 2012-12-14 2014-09-11 현대자동차주식회사 전기차량의 공조장치
KR20140113029A (ko) * 2013-03-15 2014-09-24 삼성전자주식회사 열전소자가 배치된 히트 슬러그 및 이를 구비하는 반도체 패키지
WO2015051100A1 (en) * 2013-10-03 2015-04-09 Ciil Technologies, Llc Media device enclosure system
US20150323228A1 (en) * 2014-05-08 2015-11-12 Delphi Technologies, Inc. Heat Exchanger Having a Plurality of Thermoelectric Modules Connected in Series
DE112014004840A5 (de) * 2013-10-22 2016-07-07 Güntner Gmbh & Co. Kg Ansteuereinheit für einen Wärmeaustauscher, Wärmeaustauscher und ein Verfahren zur Regelung eines Wärmeaustauschers
WO2015134516A1 (en) * 2014-03-03 2015-09-11 Marlow Industries, Inc. Improved dual core personal comfort engine (pce)
EP3137004B1 (en) * 2014-04-29 2022-03-23 William Dean Wallace Portable surgical devices for treating neoplastic and hyperplastic cells
CN106662374B (zh) * 2014-05-23 2020-08-25 莱尔德达勒姆有限公司 包括电阻加热器的热电加热/冷却装置
US9685598B2 (en) * 2014-11-05 2017-06-20 Novation Iq Llc Thermoelectric device
US10072881B2 (en) * 2014-11-26 2018-09-11 Hoffman Enclosures, Inc. Reduced footprint thermoelectric cooler controller
US20160178264A1 (en) * 2014-12-23 2016-06-23 The Trustees Of Dartmouth College Temperature gradient system and method
EP3112182A1 (en) * 2015-06-30 2017-01-04 Dong-A Pencil Co., Ltd. Heating eraser for removing thermally changeable ink
DE102015213294A1 (de) * 2015-07-15 2017-01-19 Mahle International Gmbh Thermoelektrischer Wärmetauscher
US9745621B2 (en) * 2015-08-17 2017-08-29 Wisys Technology Foundation, Inc. Temperature gradient surface plasmon resonance instrument
US20170135902A1 (en) * 2015-10-23 2017-05-18 Stephen J. Scully, JR. All-in-one system to store and transport temperature sensitive items: devices and methods for controlling and monitoring temperature as well as security in real-time.
CN106793669B (zh) * 2015-11-20 2019-04-19 华为技术有限公司 一种散热组件及通信设备
US10655896B2 (en) * 2015-12-21 2020-05-19 Invensense, Inc. Temperature stabilizing enclosure
US10845375B2 (en) * 2016-02-19 2020-11-24 Agjunction Llc Thermal stabilization of inertial measurement units
US20170276409A1 (en) * 2016-03-25 2017-09-28 Vital Trends, Inc. Active Temperature Controlled Mobile Transportation Device
US10299655B2 (en) * 2016-05-16 2019-05-28 General Electric Company Caloric heat pump dishwasher appliance
US20170328608A1 (en) * 2016-05-16 2017-11-16 General Electric Company Caloric Heat Pump Ice Making Appliance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2317018B (en) * 1996-08-29 2000-08-30 Gibert Francis Jean Paul A Low-Drift Accelerometer Component
CN101297600A (zh) * 2005-06-24 2008-10-29 开利公司 用于控制热电系统的装置
CN101463984A (zh) * 2007-12-17 2009-06-24 富士迈半导体精密工业(上海)有限公司 照明装置
CN102656533A (zh) * 2009-09-25 2012-09-05 松下电器产业株式会社 帕尔贴元件的冷却控制电路
CN102447216A (zh) * 2010-10-12 2012-05-09 奥兰若技术有限公司 组件温度控制

Also Published As

Publication number Publication date
US11300332B2 (en) 2022-04-12
NO20181675A1 (en) 2019-07-01
FR3076395A1 (fr) 2019-07-05
FR3076395B1 (fr) 2020-01-17
DE102018133643A1 (de) 2019-07-04
CN109976411A (zh) 2019-07-05
US20190203982A1 (en) 2019-07-04

Similar Documents

Publication Publication Date Title
US10676345B2 (en) Temperature stabilized MEMS device
US8569808B1 (en) Temperature stabilitized MEMS
CN109976411B (zh) 部件的热控制装置、相关电子系统及平台
CN108269769B (zh) 具有隔热和温度调节的集成电路
EP3113238B1 (en) Powering aircraft sensors using thermal capacitors
US10062827B2 (en) Thermoelectric module
US20230027399A1 (en) Battery assembly for use in an electric aircraft
US20190061970A1 (en) Multi-rotor aerial drone with thermal energy harvesting
US3478819A (en) Variable heat conductor
JP2014504007A (ja) 熱電素子、及び熱電素子の生産方法
Yang et al. ±2ppm frequency drift and 300x reduction of bias drift of commercial 6-axis inertial measurement units using a low-power oven-control micro platform
KR102101181B1 (ko) 고온 환경들을 위한 전자 회로소자
US9303630B2 (en) Device for converting thermal energy into electric energy in the presence of a hot source
Ancik et al. Modeling, simulation and experimental testing of the MEMS thermoelectric generators in wide range of operational conditions
US11509283B2 (en) Resonance device
JP5361279B2 (ja) 熱電変換素子
CN113243078A (zh) 热电发电装置
GB2112565A (en) Peltier effect temperature control device
US10994988B2 (en) Electronic system comprising a microelectromechanical system and a box encapsulating this microelectromechanical system
Shams et al. A silicon carbide pressure sensor for harsh environment
US10961115B2 (en) Semiconductor structure and manufacturing method thereof
Köhler Energy Harvesting and Energy Storage for Wireless and Less-Wired Sensors in Harsh Environments
Roy et al. Characterization of Polysilicon Microstructures to Estimate Local Temperature on CMOS Chips
JP6725904B2 (ja) 温度制御装置、方法、およびそれに使用される制御回路
Riches et al. Design and assembly of high temperature distributed aero-engine control system demonstrator

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant