GB2112565A - Peltier effect temperature control device - Google Patents
Peltier effect temperature control device Download PDFInfo
- Publication number
- GB2112565A GB2112565A GB08138968A GB8138968A GB2112565A GB 2112565 A GB2112565 A GB 2112565A GB 08138968 A GB08138968 A GB 08138968A GB 8138968 A GB8138968 A GB 8138968A GB 2112565 A GB2112565 A GB 2112565A
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- Prior art keywords
- control device
- temperature control
- layers
- conductors
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A temperature control device employing the Peltier effect has a construction comprising that of part of a conventional hybrid circuit having layers deposited upon a substrate, and the device may be included within a hybrid circuit. The device comprises two conductor layers 12 deposited on an electrically insulating substrate 10, there being two adjacent, but spaced, conductor end portions 13. Layers are deposited on the two adjacent conductor end portions, and may comprise semiconductor layers 15, 16 of the two conductivity types, in which case a common conductor layer 18 connects the two semiconductor layers. The common conductor comprises one, wide-area, junction of the thermocouple. A circuit element 19, the temperature of which is to be controlled, is mounted on the common conductor 18; or on a junction between layers of two dissimilar metals provided on the conductors on the substrate. <IMAGE>
Description
SPECIFICATION
Temperature control device
THIS INVENTION relates to temperature control devices employing the Peltier effect, and in particu lar, but not essentially, to such temperature control devices for hybrid circuits, each hybrid circuit including circuit elements, such as conductors, andlor resistors, comprising layers of the appropriate materials, formed selectively on parts of an electrically insulating substrate, for example, by depositing layers in the form of thick film pastes, or by forming thin film circuit elements, on the selected substrate parts, possibly constituent layers ofthe hybrid circuit being provided upon other constituent layers; and the hybrid circuit also including initially physically discrete circuit elements, such as semiconductor integrated circuit devices, mounted on the substrate, or on layers comprising other constituent circuit elements. All the constituent circuit elements of the hybrid circuit are interconnected in a required way to form a required electrical circuit. For convenience, in this specification, and the accompanying claims, such a hybrid circuit will be referred to as a hybrid circuit of the type referred to.
Temperature control devices are provided in hybrid circuits of the type referred to if initially physically discrete circuit elements, such as semiconductor devices, of the hybrid circuit are required to have heat extracted therefrom, orto have heat supplied thereto, the temperature control devices comprising localised heat sources, or means to remove heat, in orderthat the temperatures of the initially physically discrete circuit elements are maintained within desired ranges, when the hybrid circuits are operating under normally encountered conditions. The temperature control devices are considered to be constituent circuit elements of the hybrid circuits.
If a temperature control device, in accordance with the present invention, is not part of a hybrid circuit, but is an initially physically discrete circuit element, with an associated memberto be mounted thereon, the temperature of which member is required to be controlled by the temperature control device, the member may have any form, for example, comprising an initially physically discrete electrical circuit element.
The temperature control devices employing the
Peltier effect, and to which the present invention relates, each comprises a thermocouple. The thermocouple may comprise, for example, a P type semiconductive body and an N type semiconductive body, the two semiconductor bodies being connected together by a common, interconnecting, conductor, and electrical energy is supplied to the two semiconductor bodies by two conductors, connected individually to the semiconductor bodies remote from the common, interconnecting, conductor. One junction of such a thermocouple can be considered as comprising the common, interconnecting, conductor, between the two bodies, and the other thermocouple junction can be considered as comprising the other two conductors connected to the semiconductor bodies.Such a thermocouple construction is advantageous because large area junctions are provided, facilitating the transfer of heat thereto, and the extraction of heat therefrom.
Otherwise, the thermocouple comprises two bodies of ,issimilar metals connected to each other, with
e thermocouple junction therebetween. Electrical
ergy is supplied to the two dissimilar metals by t NO conductors, of a third metal, connected individually to the bodies of the two dissimilar metals rt mote from said one thermocouple junction. The other thermocouple junction is where the conductors are connected to the bodies of the two dissimilar metals, and can be considered to be associated with the conductors.
The direction of flow of electrical current through the temperature control device determines whether heat is supplied to, or is extracted from, a circuit element, for convenience, it being assumed that the circuit element is capable of being in close proximity to, or contiguous with, only said one thermocouple junction referred to above. If heat is to be extracted from the circuit element, said one thermocouple junction is cold, and said other thermocouple junction is hot. Heat can be removed from the temperature control device in any convenient way.
It is known to place such temperature control devices in close proximity to initially physically discrete circuit elements in hybrid circuits of the type referred to, to control the temperatures of these elements. However, in such known forms of hybrid circuits the temperature control devices are also initially physically discrete; and are mounted upon the opposing major surfaces of the electrically insulating substrates, to the surfaces on which the associated circuit elements are provided. Thus, the provision of the temperature control devices significantly contributes to the complexity of the hybrid circuits; and the constructions of the temperature control devices are not such that heat can be transferred to, or extracted from ,the temperature control devices in an efficient manner.
It is an object of the present invention to provide a novel and advantageous construction tor a temperature control device employing the Peltier effect.
It is another object of the present invention to provide a novel and advantageous construction for a hybrid circuit of the type referred to including a temperature control device employing the Peltier effect.
According to the present invention a temperature control device employing the Peltier effect at least includes a substrate of electrically insulating material, two conductors, in the form of layers, selectively are provided upon parts of the substrate, the two conductors each having an end portion adjacent to, but not contiguous with, each other, and two layers, of suitable materials, are provided selectively, and individually, on the two adjacent conductor end portions, there being one thermocouple junction
between the two layers on the conductors, said one thermocouple junction being spaced from the two conductors on the substrate, and the other thermocouple junction at least being associated with the two conductors on the substrate.
A member, the temperature of which member is required to be controlled by the temperature control device, is to be mounted on said one thermocouple junction provided between the two layers on the conductors. If heat is to be extracted from the member, heat can be removed from the two conductors on the substrate in any convenient way, possibly the heat being extracted through the substrate.
Any form of a temperature control device in accordance with the present invention, advantageously, is provided in the same manner as, and has a construction closely resembling that of, a part of a conventional hybrid circuit including a circuit element comprising a layer, or layers, deposited upon the substrate of the hybrid circuit.
Conveniently, there is provided selectively, and individually, a layer of a semiconductor material of P conductivity type on one conductor end portion, and a layer of a semiconductor material of N conductivity type on the other, adjacent conductor end portion, and a common, interconnecting, conductor layer is provided to connect together the two semiconductor layers, and is spaced from the two conductors on the substrate, the common, interconnecting, conductor being considered as comprising said one thermocouple junction, and the two conductors on the substrate being considered as comprising said other thermocouple junction.
When the temperature control device includes two semiconductor layers, the semiconductor layers may be of appropriately doped Bismuth Telluride.
The common, interconnecting, conductor comprises an advantageously large area thermocouple junction on which the member can be mounted, and whereby heat can be transferred to, or extracted from, the temperature control device; and the two conductors on the substrate comprise an advantageously large area thermocouple junction, if heat is to be removed therefrom.
The space between the adjacent end portions of the conductors on the substrate, and between the two semiconductor layers, if provided, may be filled with deposited electrically insulating material, the deposited electrically insulating material supporting the layers of the two dissimilar metals; or supporting the common, interconnecting, conductor, if two semiconductor layers are provided.
With any form of temperature control device, in accordance with the present invention, at least some of the constituent conductors may be of Gold, or of a
Palladium - Silver alloy.
If the temperature control device does not include two semiconductor layers, the member, the temperature of which member is required to be controlled, is mounted to extend over said one thermocouple junction between the two dissimilar metals.
With any form of temperature control device
referred to above, the member may be mounted to
be contiguous with said one thermocouple junction
if the member is not required to be electrically insulated therefrom. Otherwise, the member may be in close proximity to said one thermocouple junction, only being separated therefrom by an eiectrically insulating layer, for example, the member com- prising an electrical circuit element packaged in an electrically insulating housing.
According to another aspect the present invention comprises a method of manufacturing a temperature control device of any one of the forms referred to above, the layers comprising the two conductors provided selectively upon parts of the electrically insulating substrate being deposited, upon at least the selected substrate part, initially in the form of a thick film paste, the two layers on the conductor end portions being deposited initially in the form of a thick film paste, or pastes, selectively, and individually, on the two adjacent conductor end portions, and the common, interconnecting, conductor, if provided, being deposited, initially in the form of a thick film paste, upon the two layers on the two conductors.
The layers of thick film pastes may be deposited in any known way, for example, by employing silk screen printing techniques.
Usually a thick film paste includes particles of the material of which the required layer is to comprise, glass frit, and a binder. The thick film paste first is heated, to remove the binder; and then is fired, causing the glassfrit to be bonded to the substrate, and causing the required layer, formed thereby, to be secured to the surface on which the thick film paste is deposited.
It the layers of thick film paste are provided initially upon more than the selected substrate parts, subsequently, the unwanted parts of the deposited layers are removed in any convenient way.
Alternatively, the layers, or at least some of the constituent layers, of the temperature control device, may be provided by depositing the material of the layers in the convenient way. Thus, for example, metal layers may be deposited by employing conventional evaporation techniques, the source of the metal being adjacent to the substrate of the device and the metal being evaporated from the source to be deposited upon the substrate. Known chemical vapour deposition techniques also may be used, the required material to be deposited upon the substrate by the chemical reaction of a vapour of a compound of the material within the atmosphere provided for the substrate.
According to yet another aspect, the present invention comprises a hybrid circuit of the type referred to, and includingatemperature control device of any one of theforrns referred to above, the temperature control device comprising a constituent circuit element of the hybrid circuit, the electrically insulating substrate of the temperature control device comprising the substrate common for all the constituent circuit elements of the hybrid circuit, the two conductors of the temperature control device provided on the substrate comprising constituent interconnecting conductors of the hybrid circuit and the member mounted on the temperature control device comprises an initially physically discrete circuit element of the hybrid circuit, the temperature
of which circuit element is required to be controlled bythetemperature control device, the circuit ele
ment being mounted on said one thermocouple junction provided between the two layers on the conductors, and of the temperature control device, and is mounted on the common, interconnecting, conductor of the temperature control device, if provided.
The construction of a hybrid circuit in accordance with the present invention is advantageous because the constituent, initially physically discrete, circuit element, the temperature of which circuit element is required to be controlled, is mounted advantageously, and in a convenient manner, to be contiguous with, or in close proximity to said one thermocouple junction. In contrast, with known hybrid circuits, in each of which hybrid circuits initially physically discrete thermocouples are attached to the opposing major surface of the substrate to the major surface on which is mounted a constituent circuit element of the hybrid circuit required to have its temperature controlled, the substrate being between the circuit element and the temperature control device.Thus, the temperature control device, in a hybrid circuit in accordance with the present invention, is efficient in supplying heat to, or extracting heat from, the circuit element. Further, the temperature control device is of a compact, and robust construction, and does not significantly contribute towards the complexity of the construction of the hybrid circuit.
According to still another aspect, the present invention comprises a method of manufacturing a hybrid circuit of the type referred to, the hybrid circuit being of any one of the possible forms referred to above, the method including the layers, comprising at least the two conductors provided selectively upon parts of the electrically insulating substrate for the temperature control device, being deposited, upon at least the selected substrate parts, initially in the form of a thick film paste, the two layers on the conductors, and for the temperature control device, being deposited initially in the form of a thick film paste, or pastes, selectively, and individually, on the two adjacent conductor end portions, and the common, interconnecting, conductor of the temperature control device, if such a common conductor is provided, being deposited, initially in the form of a thick film paste, upon the two layers on the conductors.
The layers of thick film pastes can be deposited in any known way, for example, by silk screen printing.
Alternatively, the layers, or at least some constituent layers, of the hybrid circuit, may be provided by depositing the material of the layers in any convenient way, as referred to above in connection with the manufacture of a discrete temperature control device in accordance with the present invention.
Thus, the temperature control device is formed in the same way as, and has a construction closely resembling that of, other parts of the hybrid circuit.
The present invention will now be described by way of example with reference to the accompanying drawing, which is a sectional elevation of part of a hybrid circuit of the type referred to, and comprising one embodiment in accordance with the present invention, the drawing showing an initially physically discrete circuit element of the hybrid circuit mounted on a temperature control device therefor.
The illustrated hybrid circuit includes a common, planar substrate 10 of electrically insulating material, such as alumina.
A constituent temperature control device is formed by providing, on selected parts of one major surface 11 of the substrate, conductors 12, by depositing selectively on the substrate parts a thick film paste. Such conductors 12 may be of Gold, or of a Palladium - silver alloy. The thick film paste may be deposited selectively on the appropriate substrate parts in any convenient manner, for example, by employing conventional silk - screen printing techniques. The deposited thick film paste comprises particles of the metal, an organic binder, and a glass frit. The paste first is heated, to evaporate the organic binder, and then is fired causing the glass frit to be bonded to the substrate, and securing the conductors 12, formed thereby, to the substrate 10.
The two conductors 12 extend to be adjacent to, but not being contiguous with, each other, the gap therebetween being small. On the adjacent end portions 13 of these two conductors are deposited selectively layers of the semiconductor material
Bismuth Telluride. The Bismuth Telluride layer 15 deposited on one conductor end portion 13 of P conductivity type, and the Bismuth Telluride layer 16 deposited on the other conductor end portion 13 is of N conductivity type. The layers 15 and 16, which are considered to be of two dissimilar metals, may be deposited in any convenient way, for example, by employing conventional silk-screen printing techniques, and are provided consecutively. The deposited material comprises a thick film paste of particles of the appropriately doped Bismuth Telluride, an organic binder, and a glass frit.The paste first is heated, and then fired, causing the semiconductor layers, formed thereby, to be bonded to the conductor end portions 13.
The space between the adjacent conductor end portions 13, and between the Bismuth Telluride layers 15 and 16, is filled with electrically insulating material 17. Such electrically insulating material may cover all the parts previously provided on the major substrate surface 11, except the semiconductor layers 15 and 16. The electrical insulating material may comprise silicon oxide, and may be deposited by employing chemical vapour deposition techniques.
Then the two semiconductor layers 15 and 16 are connected to each other by providing a conducting layer 18 superimposed upon the semiconductor layers 15 and 16, and upon the interspersed electrically insulating material 17. The conducting layer 18, comprising a common, interconnecting, conductor, of the temperature control device, may, for example, be of Gold, or of a Palladium-Silver alloy, and may be deposited in any convenient way, for example, by employing conventional silk - screen printing techniques. The deposited material comprises a thick film paste of particles of the metal, an organic binder, and a glass frit. The paste first is heated, and then fired, causing the common, interconnecting, conductor, formed thereby, to be bonded to the semiconductor layers 15 and 16, and to the interspersed electrically insulating material 17.
If the layers of the thick film pastes are provided initially to be more extensive than is required, subsequently, the unwanted parts of the deposited layers are removed in any convenient way.
In this manner a thermocouple is provided within the hybrid circuit. One junction of the thermocouple can be considered as comprising the common, interconnecting, conductor 18, and the otherjunction of the thermocouple comprises the two conductors 12 on the substrate. The thermocouple comprises a constituent circuit element of the hybrid circuit, and is in the form of a temperature control device included within the hybrid circuit.
Other consitituent circuit elements (not shown), such as conductors, and/or resistors, of the hybrid circuit may be formed simultaneously with, or in sequence with, the formation of the illustrated temperature control device, by depositing layers of material upon other parts of the substrate, possibly some of the constituent layers of the other circuit elements being of the same materials as, and/or being formed in the same way as, the layers of the temperature control device. Some of such other constituent circuit elements of the hybrid circuit may comprise, for example, thin film circuit elements. In any event, the required temperature control device is formed in the same way as, and has a construction closely resembling that of, other parts of the hybrid circuit having constituent circuit elements formed by depositing a layer, or layers onto the substrate.
The hybrid circuit is completed by mounting initially physically discrete circuit elements upon the substrate, or the previously provided circuit elements comprising layers deposited upon the substrate. All the constituent circuit elements are interconnected in a required way to form a required electrical circuit.
The temperature control device provided within the hybrid circuit, and described above, isto control the temperature of an initially physically discrete circuit element 19 of the hybrid circuit. The discrete circuit element 19, for example, may comprise a semiconductor integrated circuit device. For convenience, the leads to the circuit element 19 are not shown. The element 19 is illustrated as being of conductive material, and is bonded to the conducting layer 18, of the temperature control device, by an electrically insulating adhesive 20, such as an epoxy resin. However, if the substrate part of the element
19 is electrically isolated from the remainder of the element, the substrate part may be secured to the conducting layer 18 by a suitable conducting eutectic
mixture.Alternatively, if an electrically conducting
adhesive is employed, the discrete circuit element
may be provided with an electrically insulating
housing; or the discrete circuit element may be
electrically insulated from the conductor 18 in any
convenient way. In any such arrangement, the
element, the temperature of which is required to be
controlled by the temperature control device, is
mounted directly on, or in close proximity to, the thermocouple junction comprising the conductor 18.
The layer, or layers, between the circuit element and the conductor 18, each is required to be of a material having a high coefficient of thermal conduction.
The common, interconnecting, conductor comprises an advantageously large area thermocouple junction on which the discrete circuit element can be mounted, and by which heat can be absorbed from, or transmitted to, the circuit element. In addition, the two conductors 12 on the substrate comprise an advantageously large area thermocouple junction, if heat is to be removed therefrom.
Usually the discrete circuit element 19, in operation dissipates heat, and it is required to remove this heat, so that the element operating temperature does not rise to an unacceptable value, and the temperature control device is provided to extract this heat at a desired rate. The rate of heat extraction is determined, partially, by the cross-sectional area, and the thickness, of the two semiconductor layers 15 and 16. The conductors 12 are connected to a source of electrical energy, so that current flows from the P type layer 15 to the N type layer 16. The semiconductor layers 16 and 16 become cold.
Hence, the conducting layer 18 becomes cold, and the thermocouple junction comprising the conductors 12 becomes hot.
In the operation of the hybrid circuit, and under thermal equilibrium conditions, heat dissipated within the discrete circuit element 19 is transferred from the circuit element to the temperature control device. Heat can be removed from the conductors 12 of the temperature control device in any convenient way, for example, via the substrate 10, by mounting the substrate on a heat sink. It is essential that heat is not supplied to the thermocouple at a rate faster than it can be extracted, otherwise the device becomes a thermo - electric generator.
The junctions of the temperature control device may have any desired shapes.
Within the circuit embodied in the hybrid circuit, the temperature control device may be connected, at least substantially, directly to the circuit element, the temperature of which circuit element the temperature control device is required to control.
The temperature control device also may be employed to measure the temperature of the semiconductor device mounted thereon.
The discrete circuit element 19 mounted upon the temperature control device, as described above, can be arranged to be heated in the operation of the hybrid circuit. Hence, currentflowsfrom the N type layer 16 to the P type layer 15. The conducting layer
18 becomes hot, and the conductors 12 become cold. In the operation of the hybrid circuit, and thermal equilibrium conditions, heat is transferred to the discrete circuit element 19 from the temperature control device.
The layers 15 and 16 may be of any semiconductor
material.
The conductors 12, and 18may be of any suitable
material.
The thick film pastes from which the layers, 12, 15,
16, and 18 are formed may be deposited in any
convenient way.
The conductors 12, andlorthe semiconductor layers 15 and 16, andlorthe common, interconnecting, conductor 18, may not be formed from a deposited thick film paste. Thus, at least some of the constituent layers of the temperature control device may be provided by depositing the material of the layers in any other convenient way. Metal layers may be deposited by employing conventional evaporation techniques, the source of the metal being adjacent to the substrate of the hybrid circuit, and the metal being evaporated from the source to be deposited upon the substrate. Known chemical vapour deposition techniques also may be used, the required material to be deposited upon the substrate by the chemical reaction of a vapour of a compound of the material within the atmosphere provided for the substrate.
In an alternative construction for the temperature control device, the thermocouple described above is modified by providing, by depositing upon the adjacent end portions 13 of the conductors 12, layers of two dissimilar metals, these two metals also being dissimilartothe metal oftheconductors 12. Further, the layers of the two dissimilar metals are arranged to be contiguous intermediate between the end portions 13 of the conductors, the conducting layer 18 being omitted. One junction of the thermocouple is provided where the layers of the two dissimilar metals are contiguous, and other junction of the thermocouple is provided where the layers of the two dissimilar metals are contiguous with the conductors 12.The conductors 12 may be of Copper, instead of the Gold or the Palladium - Silver alloy referred to above, and one of the two dissimilar metals may be of Constantan, comprising an alloy of 60% by weight Copper, and 40% by weight Nickel, and the other of the two dissimilar metals may be of
Platinium. The discrete circuit element 19 is mounted to extend over the junction between the two dissimilar metals.
With any form of temperature control device, the space between the adjacent conductor end portions 13, and between the two semiconductor layers, if provided, may not be filled with deposited electrically insulating material. However, the deposited electrically insulating material may be advantageous in supporting the layers of the two dissimilar metals; or the common, interconnecting, conductor if two semiconductor layers are provided.
The construction of a hybrid circuit in accordance with the present invention is advantageous because the discrete circuit element 19 is mounted to be contiguous with, or in close proximity to the thermocouple junction between the two layers on the conductors. Further, the temperature control device is of a compact and robust construction, and does not significantly contribute towards the complexity of the construction of the hybrid circuit.
Atemperature control device in a hybrid circuit, in accordance with the present invention, could com
prise a plurality ofthermocouples, each constituent thermocouple individually being provided in one of the ways described above, the constituent thermo
couples being in the form of an array, with the thermocouples connected electrically to be in series with each other, and the thermocouples are arranged to be thermally in parallel with each other.
Thus, the discrete circuit element, the temperature of which is required to be controlled, may be mounted on a plurality of thermocouples.
Usually only one circuit element is mounted on a temperature control device, but if convenient, more than one circuit element could be mounted on the temperature control device.
More than one temperature control device, each of a construction described above, may be provided within a hybrid circuit, each constituent temperature control device having at least one initially physically discrete circuit element mounted thereon.
Each provided temperature control device is to maintain the temperature of the associated circuit elements within desired ranges, when the hybrid circuit is operating under normally encountered conditions.
In accordance with another aspect of the present invention, a temperature control device has a construction of any one of the forms described above, and is formed in any one of the different ways described above, but is not part of a hybrid circuit.
Instead such a temperature control device initially is physically discrete, and may be attached, in any convenient way, to an associated member in order to control the temperature of the member, the member possibly comprising an initially physically discrete electrical circuit element.
Claims (12)
1. Atemperature control device employing the
Peltier effect at least including a substrate of electrically insulating material, two conductors, in the form of layers, selectively are provided upon parts of the substrate, the two conductors each having an end portion adjacent to, but not contiguous with, each other, and two layers are provided selectively, and individually, on the two adjacent conductor end portions, there being one thermocouple junction between the two layers on the conductors, said one thermocouple junction being spaced from the two conductors on the substrate, and the other thermocouple junction at least being associated with the conductors of the substrate.
2. A device as claimed in claim 1 in which there is provided selectively, and individually, a layer of a semiconductor material of P conductivity type on one conductor end portion, and a layer of a semiconductor material of N conductivity type on the other, adjacent, conductor end portion, and a common, interconnecting, conductor layer is provided to connect together the two semiconductor layers, and is spaced from the two conductors on the substrate, the common, interconnecting, conductor comprising said one thermocouple junction, and the two conductors on the substrate comprising said other thermocouple junction.
3. A device as claimed in claim 2 in which the semiconductor layers are of appropriately doped
Bismuth Telluride.
4. A device as claimed in any one of the preced
ing claims in which the space between the adjacent
end portions of the conductors on the substrate, and
between the two semiconductor layers, if provided,
is filled with deposited electrically insulating mate
rial, the deposited electrically insulating material
supporting the layers of the two dissimilar metals; or
supporting the common, interconnecting, conductor, if two semiconductor layers are provided.
5. A device as claimed in any one of the preceding claims in which at least some of the conductors are of Gold, or of a Palladium - Silver alloy.
6. A method of manufacturing a temperature control device of a form as claimed in any one of the preceding claims, in which method the layers comprising the two conductors provided selectively upon parts of the electrically insulating substrate are deposited, upon at least the selected substrate parts, initially in the form of a thick film paste, the two layers on the conductor end portions being deposited initially in the form of a thick film paste, or pastes, selectively, and individually, on the two adjacent conductor end portions, and the common, interconnecting, conductor, if provided, is deposited,
initially in the form of a thick film paste, upon the two layers on the two conductors.
7. A hybrid circuit of the type referred to, and including a temperature control device as claimed in any one of claims 1 to 5, the temperature control device comprising a constituent circuit element of the hybrid circuit, the electrically insulating substrate of the temperature control device comprising the substrate common for all the constituent circuit elements of the hybrid circuit, the two conductors of the temperature control device provided on the substrate comprising constituent interconnecting conductors of the hybrid circuit, and an initially physically discrete circuit element of the hybrid circuit, the temperature of which circuit element is required to be controlled by the temperature control device, is mounted on said one thermocouple junction provided between the two layers on the conductors, and of the temperature control device, and is mounted on the common, interconnecting, conductor of the temperature control device, if provided.
8. A method of manufacturing a hybrid circuit of the type referred to, and having the form as claimed in claim 7, the method including the layers, comprising at least the two conductors provided selectively upon parts of the electrically insulating substrate for the temperature control device, being deposited upon at least the selected substrate parts, initially in the form of a thick film paste, the two layers on the conductors, and for the temperature control device, being deposited initially in the form of a thick film paste, or pastes, selectively, and individually, on the two adjacent conductor end portions, and the common, interconnecting, conductor of the temperature control device, if such a common conductor is
provided, being deposited, initially in the form of a thick film paste, upon the two layers on the conductors.
9. Atemperature control device substantially as
described herein with reference to the accompany
ing drawings.
10. A method of manufacturing a temperature
control device substantially as described herein with
reference to the accompanying drawing.
11. A hybrid circuit of the type referred to, and including a temperature control device, substantially as described herein with reference to the accom panting drawing.
12. A method of manufacturing a hybrid circuit of the type referred to, the hybrid circuit including a temperature control device, and the method being substantially as described herein with reference to the accompanying drawing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08138968A GB2112565B (en) | 1981-12-24 | 1981-12-24 | Peltier effect temperature control device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08138968A GB2112565B (en) | 1981-12-24 | 1981-12-24 | Peltier effect temperature control device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2112565A true GB2112565A (en) | 1983-07-20 |
| GB2112565B GB2112565B (en) | 1985-12-18 |
Family
ID=10526853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08138968A Expired GB2112565B (en) | 1981-12-24 | 1981-12-24 | Peltier effect temperature control device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2112565B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2131607A (en) * | 1982-11-24 | 1984-06-20 | Hitachi Ltd | Semiconductor laser device |
| EP0314481A1 (en) * | 1987-10-28 | 1989-05-03 | Irish Transformers Limited | A temperature control instrument for electronic components under test |
| EP0319425A1 (en) * | 1987-12-03 | 1989-06-07 | STMicroelectronics S.A. | Chip card having an electronic integrated circuit and subject to mechanical and electrical constraints |
| US5012325A (en) * | 1990-04-24 | 1991-04-30 | International Business Machines Corp. | Thermoelectric cooling via electrical connections |
| US5032897A (en) * | 1990-02-28 | 1991-07-16 | International Business Machines Corp. | Integrated thermoelectric cooling |
| DE4104327A1 (en) * | 1991-02-13 | 1992-08-20 | Fraunhofer Ges Forschung | Peltier element for heat removal from silicon@ dice - is formed on a cantilevered part of a silicon substrate to avoid the degradation caused by a cooling substrate |
| US6476483B1 (en) * | 1999-10-20 | 2002-11-05 | International Business Machines Corporation | Method and apparatus for cooling a silicon on insulator device |
| EP2061098A1 (en) * | 2006-09-05 | 2009-05-20 | Pioneer Corporation | Thermal sound generating device |
-
1981
- 1981-12-24 GB GB08138968A patent/GB2112565B/en not_active Expired
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604753A (en) * | 1982-11-24 | 1986-08-05 | Hitachi, Ltd. | Semiconductor laser module having an improved temperature control arrangement |
| GB2131607A (en) * | 1982-11-24 | 1984-06-20 | Hitachi Ltd | Semiconductor laser device |
| EP0314481A1 (en) * | 1987-10-28 | 1989-05-03 | Irish Transformers Limited | A temperature control instrument for electronic components under test |
| US5006796A (en) * | 1987-10-28 | 1991-04-09 | Irish Transformers Limited | Temperature control instrument for electronic components under test |
| EP0319425A1 (en) * | 1987-12-03 | 1989-06-07 | STMicroelectronics S.A. | Chip card having an electronic integrated circuit and subject to mechanical and electrical constraints |
| FR2624305A1 (en) * | 1987-12-03 | 1989-06-09 | Sgs Thomson Microelectronics | INTEGRATED CIRCUIT PROVIDED WITH A PELTIER EFFECT COOLING DEVICE |
| US5032897A (en) * | 1990-02-28 | 1991-07-16 | International Business Machines Corp. | Integrated thermoelectric cooling |
| US5012325A (en) * | 1990-04-24 | 1991-04-30 | International Business Machines Corp. | Thermoelectric cooling via electrical connections |
| DE4104327A1 (en) * | 1991-02-13 | 1992-08-20 | Fraunhofer Ges Forschung | Peltier element for heat removal from silicon@ dice - is formed on a cantilevered part of a silicon substrate to avoid the degradation caused by a cooling substrate |
| US6476483B1 (en) * | 1999-10-20 | 2002-11-05 | International Business Machines Corporation | Method and apparatus for cooling a silicon on insulator device |
| EP2061098A1 (en) * | 2006-09-05 | 2009-05-20 | Pioneer Corporation | Thermal sound generating device |
| EP2061098A4 (en) * | 2006-09-05 | 2011-06-01 | Pioneer Corp | Thermal sound generating device |
| US8094840B2 (en) | 2006-09-05 | 2012-01-10 | Pioneer Corporation | Thermal sound generating device |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2112565B (en) | 1985-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |