CN1099434A - 半导体棒材或块材的生产方法及设备 - Google Patents

半导体棒材或块材的生产方法及设备 Download PDF

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Publication number
CN1099434A
CN1099434A CN94107967A CN94107967A CN1099434A CN 1099434 A CN1099434 A CN 1099434A CN 94107967 A CN94107967 A CN 94107967A CN 94107967 A CN94107967 A CN 94107967A CN 1099434 A CN1099434 A CN 1099434A
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CN
China
Prior art keywords
melt
phase
semiconductor material
free surface
fusion
Prior art date
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Pending
Application number
CN94107967A
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English (en)
Chinese (zh)
Inventor
约阿希姆·盖斯勒
乌尔里希·昂格利斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
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Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of CN1099434A publication Critical patent/CN1099434A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CN94107967A 1993-07-15 1994-07-14 半导体棒材或块材的生产方法及设备 Pending CN1099434A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4323793A DE4323793A1 (de) 1993-07-15 1993-07-15 Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung
DEP4323793.2 1993-07-15

Publications (1)

Publication Number Publication Date
CN1099434A true CN1099434A (zh) 1995-03-01

Family

ID=6492930

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94107967A Pending CN1099434A (zh) 1993-07-15 1994-07-14 半导体棒材或块材的生产方法及设备

Country Status (7)

Country Link
US (1) US5492079A (https=)
EP (1) EP0634504A1 (https=)
JP (1) JPH0769775A (https=)
KR (1) KR950003483A (https=)
CN (1) CN1099434A (https=)
DE (1) DE4323793A1 (https=)
TW (1) TW314641B (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102113095A (zh) * 2008-06-05 2011-06-29 瓦里安半导体设备公司 无错位结晶板的制造方法及其装置
CN101054717B (zh) * 2001-11-15 2012-04-25 Memc电子材料有限公司 用于增加多晶硅熔化速率的间歇式加料技术
CN103649381A (zh) * 2011-04-11 2014-03-19 施特赖歇尔机械制造两合有限公司 用于生产具有单晶或多晶结构的材料的方法和装置
CN104131338A (zh) * 2014-07-17 2014-11-05 大连理工大学 电子束顶部局部加热凝固多晶硅除杂装置及多晶硅加热凝固除杂方法
CN108091708A (zh) * 2017-12-08 2018-05-29 北京通美晶体技术有限公司 锗单晶片、其制法、晶棒的制法及单晶片的用途
CN113748086A (zh) * 2019-04-30 2021-12-03 瓦克化学股份公司 使用颗粒介体精炼粗硅熔体的方法
CN115790229A (zh) * 2023-02-13 2023-03-14 成都天保节能环保工程有限公司 一种适用于流化床蓄热的结构及方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2935337B2 (ja) * 1994-11-21 1999-08-16 信越半導体株式会社 粒状原料の供給装置およびその供給方法
US6126742A (en) * 1996-09-20 2000-10-03 Forshungszentrum Karlsruhe Gmbh Method of drawing single crystals
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
DE19927604A1 (de) 1999-06-17 2000-12-21 Bayer Ag Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
DE10220964B4 (de) * 2002-05-06 2006-11-02 Pv Silicon Forschungs- Und Produktions Ag Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
JP2004083322A (ja) * 2002-08-26 2004-03-18 Sumitomo Mitsubishi Silicon Corp Ｃｚ原料供給方法及び供給治具
WO2010080918A2 (en) * 2009-01-07 2010-07-15 Rec Silicon Inc Solidification of molten material over moving bed of divided solid material
US10087080B2 (en) * 2011-11-28 2018-10-02 Sino-American Silicon Products Inc. Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles
LV15065B (lv) * 2015-05-26 2015-11-20 Anatoly Kravtsov Silīcija beztīģeļa zonas kausēšanas paņēmiens
WO2019186871A1 (ja) 2018-03-29 2019-10-03 株式会社クリスタルシステム 単結晶製造装置および単結晶製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE138279C (https=) *
NL104644C (https=) * 1959-09-18
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
DE2635373C2 (de) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form
DE2925679A1 (de) * 1979-06-26 1981-01-22 Heliotronic Gmbh Verfahren zur herstellung von siliciumstaeben
US4358416A (en) * 1980-12-04 1982-11-09 Olin Corporation Apparatus and process for cooling and solidifying molten material being electromagnetically cast
DE3531610A1 (de) * 1985-09-04 1987-03-05 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben
JPS62246894A (ja) * 1986-04-15 1987-10-28 Kyushu Denshi Kinzoku Kk 単結晶の製造方法及びその装置
US4824519A (en) * 1987-10-22 1989-04-25 Massachusetts Institute Of Technology Method and apparatus for single crystal pulling downwardly from the lower surface of a floating melt
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101054717B (zh) * 2001-11-15 2012-04-25 Memc电子材料有限公司 用于增加多晶硅熔化速率的间歇式加料技术
CN102113095A (zh) * 2008-06-05 2011-06-29 瓦里安半导体设备公司 无错位结晶板的制造方法及其装置
CN102113095B (zh) * 2008-06-05 2013-08-28 瓦里安半导体设备公司 自熔体形成板的方法
CN103649381A (zh) * 2011-04-11 2014-03-19 施特赖歇尔机械制造两合有限公司 用于生产具有单晶或多晶结构的材料的方法和装置
CN103649381B (zh) * 2011-04-11 2016-09-28 施特赖歇尔机械制造两合有限公司 用于生产具有单晶或多晶结构的材料的方法和装置
CN104131338A (zh) * 2014-07-17 2014-11-05 大连理工大学 电子束顶部局部加热凝固多晶硅除杂装置及多晶硅加热凝固除杂方法
CN104131338B (zh) * 2014-07-17 2016-08-24 大连理工大学 电子束顶部局部加热凝固多晶硅除杂装置及多晶硅加热凝固除杂方法
CN108091708A (zh) * 2017-12-08 2018-05-29 北京通美晶体技术有限公司 锗单晶片、其制法、晶棒的制法及单晶片的用途
CN108091708B (zh) * 2017-12-08 2020-08-14 北京通美晶体技术有限公司 锗单晶片、其制法、晶棒的制法及单晶片的用途
CN113748086A (zh) * 2019-04-30 2021-12-03 瓦克化学股份公司 使用颗粒介体精炼粗硅熔体的方法
CN113748086B (zh) * 2019-04-30 2024-02-06 瓦克化学股份公司 使用颗粒介体精炼粗硅熔体的方法
CN115790229A (zh) * 2023-02-13 2023-03-14 成都天保节能环保工程有限公司 一种适用于流化床蓄热的结构及方法

Also Published As

Publication number Publication date
JPH0769775A (ja) 1995-03-14
DE4323793A1 (de) 1995-01-19
TW314641B (https=) 1997-09-01
EP0634504A1 (de) 1995-01-18
US5492079A (en) 1996-02-20
KR950003483A (ko) 1995-02-17

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