CN109935168A - A kind of underlay substrate and preparation method thereof, array substrate and display device - Google Patents
A kind of underlay substrate and preparation method thereof, array substrate and display device Download PDFInfo
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- CN109935168A CN109935168A CN201910238145.8A CN201910238145A CN109935168A CN 109935168 A CN109935168 A CN 109935168A CN 201910238145 A CN201910238145 A CN 201910238145A CN 109935168 A CN109935168 A CN 109935168A
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- underlay substrate
- conductive metal
- metal layer
- insulating layer
- hole
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Abstract
The present invention provides a kind of underlay substrate and preparation method thereof, array substrate and display devices, are related to field of display technology.Wherein, underlay substrate includes through-hole, and through-hole is interior along the direction that underlay substrate first surface is directed toward second surface, has been stacked the first insulating layer, conductive metal layer, second insulating layer；Conductive metal layer extends to underlay substrate first surface along through-hole side wall；Second insulating layer is provided with the via hole for extending to conductive metal layer；First surface is opposite with second surface.In the present invention, conductive metal layer on underlay substrate first surface, and the conductive metal layer that underlay substrate second surface side is exposed, it can be respectively used to connection pixel circuit and driving circuit, namely pixel circuit and driving circuit can be separately positioned on two opposite surfaces of underlay substrate, the two can extend to via hole and the conductive metal layer connection of conductive metal layer by second insulating layer, so, no setting is required, and frame region blocks driving circuit, improves the screen accounting of display device.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of underlay substrate and preparation method thereof, array substrate with
And display device.
Background technique
With being constantly progressive for science and technology, the status of visual information in people's lives is more and more important, therefore, holds
The display device, such as TV, computer, mobile phone, wearable device etc. for carrying visual information information, also occupy in people's lives
Increasingly consequence.With the continuous development of display technology, people also proposed higher quality requirements to display device,
Such as comprehensive screen of high screen accounting etc..
In traditional display device, driving circuit and its connecting line are generally arranged at the non-display area of display area periphery
It in domain, is blocked it is thus typically necessary to which biggish frame region is arranged, in this way, limiting the raising of display device screen accounting.
Summary of the invention
The present invention provides a kind of underlay substrate and preparation method thereof, array substrate and display device, can be in certain journey
The screen accounting of existing display device is improved on degree.
To solve the above-mentioned problems, the invention discloses a kind of underlay substrate, the underlay substrate includes through-hole, described logical
In hole along the direction that the underlay substrate first surface is directed toward the underlay substrate second surface, it is stacked the first insulation
Layer, conductive metal layer, second insulating layer；Wherein,
The conductive metal layer extends to the first surface of the underlay substrate along the side wall of the through-hole；
The second insulating layer is provided with the via hole for extending to the conductive metal layer；
The first surface of the underlay substrate is opposite with the second surface of the underlay substrate.
Optionally, the cross section of first insulating layer is inverted trapezoidal or rectangle in the through-hole；Wherein, described transversal
Face is parallel to the thickness direction of the underlay substrate.
Optionally, between the thickness direction of the through-hole is contacted with the conductive metal layer side wall and the underlay substrate
Target angle be less than or equal to 30 degree.
Optionally, the first thickness ratio between the thickness of the second insulating layer and the thickness of the underlay substrate is greater than
Or it is equal to 5%, and be less than or equal to 20%.
Optionally, the second thickness ratio between the thickness of the conductive metal layer and the thickness of the underlay substrate is greater than
Or it is equal to 0.1%, and be less than or equal to 1%.
Optionally, the thickness of the conductive metal layer is greater than or equal to 1 micron, and is less than or equal to 10 microns.
Optionally, the thickness of first insulating layer is less than or equal to the underlay substrate first surface to the conductive gold
Belong to the thickness of layer；
And/or
The thickness of the second insulating layer is less than or equal to the underlay substrate second surface to the conductive metal layer
Thickness.
Optionally, the material of the conductive metal layer is at least one of copper, aluminium, silver, titanium.
Optionally, first insulating layer and/or the material of the second insulating layer are polysiloxanes.
Optionally, the material of the underlay substrate is silicon, glass or polyimides.
To solve the above-mentioned problems, the invention also discloses a kind of array substrates, including above-mentioned underlay substrate, and respectively
Pixel circuit and driving circuit in the opposite first surface and second surface of the underlay substrate are set；Wherein, the picture
Plain circuit and the driving circuit are by extending to the via hole of the conductive metal layer and described leading in the second insulating layer
Metal layer connection.
To solve the above-mentioned problems, the invention also discloses a kind of display devices, including above-mentioned array substrate.
To solve the above-mentioned problems, the invention also discloses a kind of preparation methods of underlay substrate, comprising:
One underlay substrate is provided；
The first blind hole is formed on the first surface of the underlay substrate；
Conductive metal layer is formed on the first surface of the underlay substrate, the conductive metal layer covering described first is blind
The bottom in hole and at least partly side wall；
In the conductive metal layer being located in first blind hole close to the side shape of the underlay substrate first surface
At the first insulating layer；
The second blind hole is formed on the second surface opposite with the first surface of the underlay substrate, described first is blind
Hole and second blind hole constitute through-hole；
Second insulating layer is formed in second blind hole, the second insulating layer, which is provided with, extends to the conductive metal
The via hole of layer.
It is optionally, described to form second insulating layer in second blind hole, comprising:
By solwution method, second insulating layer is filled in second blind hole；
Patterned process is carried out to the second insulating layer, forms the via hole for extending to the conductive metal layer.
It is optionally, described to form conductive metal layer on the first surface of the underlay substrate, comprising:
By sputtering technology or evaporation process, the first surface of the underlay substrate, the bottom of first blind hole and
At least partly side wall forms conductive metal layer.
Compared with prior art, the present invention includes the following advantages:
In embodiments of the present invention, underlay substrate includes through-hole, and through-hole is interior to be directed toward substrate base along underlay substrate first surface
On the direction of plate second surface, it is stacked the first insulating layer, conductive metal layer, second insulating layer；Wherein, conductive metal layer
The first surface of underlay substrate is extended to along the side wall of through-hole；Second insulating layer is provided with the via hole for extending to conductive metal layer；
The first surface of underlay substrate and the second surface of underlay substrate are opposite.In embodiments of the present invention, it is located at underlay substrate first
Partially electronically conductive metal layer on surface, can be used for connecting one of pixel circuit and driving circuit, and from underlay substrate second
The partially electronically conductive metal layer that the second insulating layer via bottom of surface side is exposed, can be used for connecting pixel circuit and driving circuit
The other of, pixel circuit is prepared so as to the side in underlay substrate, driving circuit, and pixel circuit is arranged in the other side
It can be connect by the via hole and conductive metal layer for extending to conductive metal layer in second insulating layer with driving circuit.In this way,
Pixel circuit and driving circuit can be separately positioned on two opposite surfaces of underlay substrate, there is no need to be arranged frame region into
Row blocks, and so as to reduce the frame region of display device, and then can be improved the screen accounting of display device.
Detailed description of the invention
Fig. 1 shows a kind of schematic cross-section of underlay substrate of the embodiment of the present invention；
Fig. 2 shows a kind of top views of underlay substrate first surface of the embodiment of the present invention；
Fig. 3 shows a kind of top view of underlay substrate second surface of the embodiment of the present invention；
Fig. 4 shows a kind of step flow chart of the preparation method of underlay substrate of the embodiment of the present invention；
Fig. 5 shows the underlay substrate schematic diagram after a kind of the first blind hole of formation of the embodiment of the present invention；
Fig. 6 shows the underlay substrate schematic diagram after a kind of formation conductive metal layer of the embodiment of the present invention；
Fig. 7 shows the underlay substrate schematic diagram after a kind of the first insulating layer of formation of the embodiment of the present invention；
Fig. 8 shows the underlay substrate schematic diagram after a kind of the second blind hole of formation of the embodiment of the present invention；
Fig. 9 shows the underlay substrate schematic diagram after a kind of formation second insulating layer of the embodiment of the present invention；
Figure 10 shows the underlay substrate schematic diagram after a kind of via hole of formation second insulating layer of the embodiment of the present invention.
Description of symbols:
10- underlay substrate, 11- through-hole, the first insulating layer of 12-, 13- conductive metal layer, 14- second insulating layer, 141- mistake
Hole, the first blind hole of 01-, the second blind hole of 02-.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Embodiment one
Referring to Fig.1, a kind of schematic cross-section of underlay substrate of the embodiment of the present invention one is shown, the underlay substrate 10 packet
Through-hole 11 is included, through-hole 11 is interior along the direction that underlay substrate first surface S1 is directed toward underlay substrate second surface S2, is stacked
There are the first insulating layer 12, conductive metal layer 13, second insulating layer 14.Wherein, conductive metal layer 13 extends along the side wall of through-hole 10
To the first surface S1 of underlay substrate 10, it that is to say that conductive metal layer 13 at least partly covers the first surface of underlay substrate 10
S1；Second insulating layer 14 is provided with the via hole 141 for extending to conductive metal layer 13, so that conductive metal layer 13 can be from via hole
141 bottom part exposes；The first surface S1 of underlay substrate 10 and the second surface S2 of underlay substrate 10 are opposite.Specifically answering
In, underlay substrate 10 may include one or more above-mentioned through-holes 11, and the present invention is not especially limit this.
In embodiments of the present invention, it is formed with conductive metal layer 13 on the first surface S1 of underlay substrate 10, this part
Conductive metal layer 13 can be used for connecting one of pixel circuit and driving circuit.In addition, conductive metal layer 13 can be from
141 bottom part of via hole of two insulating layers 14 exposes, and that is to say that conductive metal layer 13 can expose the second table of underlay substrate 10
Face S2, and this partially electronically conductive metal layer 13 can be used for connecting the other of pixel circuit and driving circuit, so as to
Prepare pixel circuit in the side of underlay substrate 10, underlay substrate 10 the other side be arranged driving circuit, and pixel circuit with
Driving circuit can be connected by the via hole 141 and conductive metal layer 13 for extending to conductive metal layer 13 in second insulating layer 14
It connects.In this way, pixel circuit and driving circuit can be separately positioned on two opposite surfaces of underlay substrate 10, there is no need to be arranged
Frame region is blocked, and so as to reduce the frame region of display device, and then can be improved the screen accounting of display device.
It should be noted that driving circuit is specifically as follows the driving circuit for display, naturally it is also possible to be the driving of other function
Circuit, the present invention is not especially limit this.
Further, in a particular application, the cross section of the first insulating layer 12 is inverted trapezoidal or rectangle in through-hole 11,
In, which is parallel to the thickness direction of underlay substrate 10.For be parallel to underlay substrate 10 thickness direction first absolutely
Any cross section of edge layer 12 is inverted trapezoidal or rectangle in through-hole 11, correspondingly, the first insulating layer 12 is perpendicular to substrate
The cross section of the thickness direction of substrate 10 is circle in through-hole 11.It is fallen in through-hole 11 cross section of first insulating layer 12
When trapezoidal, that is to say that side wall that through-hole 11 is in contact with conductive metal layer 13 can be inclined-plane, so it is subsequent can be by conductive gold
Belong to layer 13 to be more uniformly deposited on the side wall of through-hole 11, reduces the technology difficulty to form conductive metal layer 13.Certainly,
The cross section of one insulating layer 12 may be rectangle in through-hole 11, that is to say the side that through-hole 11 is in contact with conductive metal layer 13
Wall can be vertical plane, and the present invention is not especially limit this.
Specifically, the target between the side wall that through-hole 11 is contacted with conductive metal layer 13 and the thickness direction of underlay substrate 10
Angle [alpha] is less than or equal to 30 degree.Referring to Fig.1, the thickness of through-hole 11 is contacted with conductive metal layer 13 side wall and underlay substrate 10
Target angle α can be formed between direction, when target angle α is greater than 0 degree, side that through-hole 11 is in contact with conductive metal layer 13
Wall is inclined-plane, and the cross section that the first insulating layer 12 is parallel to underlay substrate thickness direction is inverted trapezoidal in through-hole 11, when
When target angle α is equal to 0 degree, the side wall that through-hole 11 is in contact with conductive metal layer 13 is vertical plane, and the first insulating layer 12 is flat
Row is rectangle in through-hole 11 in the cross section of underlay substrate thickness direction.In a kind of preferred implementation, through-hole 11
Target angle α between the side wall contacted with conductive metal layer 13 and the thickness direction of underlay substrate 10 can be greater than or equal to 10
Degree, and it is less than or equal to 30 degree, so that more conducively conductive metal layer 13 more uniformly deposits on through-hole side wall.
In practical applications, the first thickness ratio between the thickness of the thickness and underlay substrate 10 of second insulating layer 14 can
To be greater than or equal to 5%, and be less than or equal to 20%, correspondingly, the overall thickness of the first insulating layer 12 and conductive metal layer 13 with
Thickness proportion between the thickness of underlay substrate 10 can be greater than or equal to 80%, and be less than or equal to 95%, that is to say through-hole
The partial depth of 11 the first insulating layers 12 of receiving and conductive metal layer 13 is deeper, and through-hole 11 accommodates the part of second insulating layer 14
Depth is shallower.When material layer or connecting line since other devices being arranged on underlay substrate second surface S2, need to make material
Layer or connecting line go deep into 141 bottom of via hole of second insulating layer 14, and the conductive metal layer 13 with exposing second insulating layer 14
Connection, to realize the conducting between device, therefore, and if the partial depth that through-hole 11 accommodates second insulating layer 14 is deeper, substrate
Material layer or connecting line on second substrate surface S2 need biggish thickness, allow it to be connected to 141 bottom of via hole
Conductive metal layer 13, and if through-hole 11 accommodate second insulating layer 14 partial depth it is shallower, in underlay substrate second surface S2
Upper formation relatively thin material layer or connecting line can be connected with the conductive metal layer 13 of 141 bottom of via hole, to reduce subsequent
The preparation difficulty of device.
Further, in practical applications, inventors have found that if being stuffed entirely with conduction in the through-hole 11 of underlay substrate 10
Metal layer 13, then the conductive metal layer 13 in through-hole 11 can expand in the subsequent some high-temperature technologies for preparing pixel circuit
And heave, such as CVD (Chemical Vapor Deposition, chemical vapor deposition) technique, annealing process etc., thus meeting
Film layer in dot structure is caused to squeeze, in this way, the film layer easily caused in dot structure is ruptured, so that display device
Yield is lower.
Based on above-mentioned discovery, in specific application, between the thickness of conductive metal layer 13 and the thickness of underlay substrate 10
Second thickness ratio can be greater than or equal to 0.1%, and be less than or equal to 1%.Since the thickness of conductive metal layer 13 is only to serve as a contrast
The 0.1%~1% of base plate thickness, therefore, the thickness of conductive metal layer 13 are much smaller than the thickness of underlay substrate 10, namely conductive
Metal layer 13 is flaky, so that underlay substrate 10 is in subsequent experience high-temperature technology, the degrees of expansion of conductive metal layer 13 compared with
It is small, and then the dot structure film layer on underlay substrate 10 will not be caused to squeeze, in this way, dot structure film layer is not easily broken, into
And it can be improved the yield of display device.In practical applications, the thickness of conductive metal layer 13 can be greater than or equal to 1 micron,
And it is less than or equal to 10 microns.
In addition, the thickness of the first insulating layer 12 can be less than or equal to underlay substrate first surface S1 to conductive metal layer 13
Thickness, and/or, the thickness of second insulating layer 14 can be less than or equal to underlay substrate first surface S2 to conductive metal layer 13
Thickness.In practical applications, the surface of the first insulating layer 12 can be slightly below the first surface S1 of underlay substrate 10, and second absolutely
The surface of edge layer 14 can be slightly below the second surface S2 of underlay substrate 10, so that even if conductive metal layer 13 is under high-temperature technology
It slightly expands, between the first insulating layer 12 and underlay substrate first surface S1 and second insulating layer 14 and underlay substrate
There is also certain height spaces to be able to carry out buffering between second surface S2, can further avoid setting on underlay substrate 10
The dot structure film layer set causes to squeeze.
As shown in Figure 1, in one implementation, the outer diameter for the side wall that through-hole 11 is contacted with second insulating layer 14 can be small
In the outer diameter for the side wall that through-hole 11 is contacted with conductive metal layer 13, in this way, second insulating layer 14 can while thinner thickness,
Realize the contact of larger area, with conductive metal layer 13 so as to save the materials of second insulating layer 14.In addition, specifically answering
In, between the center of the first insulating layer 12, the center of second insulating layer 14 and the first insulating layer 12 and second insulating layer 14
The center of conductive metal layer part can be overlapped on the thickness direction of underlay substrate 10.
Fig. 2 shows a kind of top view of underlay substrate first surface of the embodiment of the present invention one, Fig. 3 shows the present invention
A kind of top view of underlay substrate second surface of embodiment one, as shown in Figures 2 and 3, through-hole 11 is perpendicular to underlay substrate thickness
The cross section for spending direction can be circle, certainly in practical applications, or the other shapes such as ellipse, the present invention are implemented
Example is not especially limited this.
Further, in a particular application, the material of conductive metal layer 13 can be at least one in copper, aluminium, silver, titanium
Kind, it that is to say that the material of conductive metal layer 13 can be single metal, or alloy, the embodiment of the present invention do not make this to have
Body limits.
In addition, in practical applications, the material of the first insulating layer 12 and/or second insulating layer 14 can be polysiloxanes,
It is, of course, also possible to be able to bear the organic insulating material of high-temperature technology for other, the present invention is not especially limit this.
It should be noted that the high-temperature technology mentioned by embodiments of the present invention, can refer to that processing temperature is greater than or equal to 200 and takes the photograph
The technique of family name's degree.In addition, in specific application, the material of the first insulating layer 12 and the material of second insulating layer 14 can be identical,
It can also be different, this embodiment of the present invention is equally not especially limited.
In addition, in embodiments of the present invention, the material of underlay substrate 10 can be silicon, glass or polyimides, the present invention
Embodiment is not especially limited this.
It should be noted that thickness described in various embodiments of the present invention, each means each structure along underlay substrate thickness
Thickness on direction, the embodiment of the present invention is for thickness of each structure on other directions without specifically limiting.
In embodiments of the present invention, underlay substrate includes through-hole, and through-hole is interior to be directed toward substrate base along underlay substrate first surface
On the direction of plate second surface, it is stacked the first insulating layer, conductive metal layer, second insulating layer；Wherein, conductive metal layer
The first surface of underlay substrate is extended to along the side wall of through-hole；Second insulating layer is provided with the via hole for extending to conductive metal layer；
The first surface of underlay substrate and the second surface of underlay substrate are opposite.In embodiments of the present invention, it is located at underlay substrate first
Partially electronically conductive metal layer on surface, can be used for connecting one of pixel circuit and driving circuit, and from underlay substrate second
The partially electronically conductive metal layer that the second insulating layer via bottom of surface side is exposed, can be used for connecting pixel circuit and driving circuit
The other of, pixel circuit is prepared so as to the side in underlay substrate, driving circuit, and pixel circuit is arranged in the other side
It can be connect by the via hole and conductive metal layer for extending to conductive metal layer in second insulating layer with driving circuit.In this way,
Pixel circuit and driving circuit can be separately positioned on two opposite surfaces of underlay substrate, there is no need to be arranged frame region into
Row blocks, and so as to reduce the frame region of display device, and then can be improved the screen accounting of display device.
Embodiment two
Referring to Fig. 4, a kind of step flow chart of the preparation method of underlay substrate of the embodiment of the present invention two, the party are shown
Method may comprise steps of:
Step 401: a underlay substrate is provided.
In embodiments of the present invention, a underlay substrate 10 can be provided first, which can be silicon chip substrate
Substrate, glass substrate substrate or flexible polyimide (PI) underlay substrate etc., the present invention is not especially limit this.
Step 402: the first blind hole is formed on the first surface of underlay substrate.
It in embodiments of the present invention, can be by hole knockouts such as laser borings, the of underlay substrate 10 referring to Fig. 5
One surface S1 forms the first blind hole 01.Wherein, the first blind hole 01 can penetrate the thickness of underlay substrate 80%~95%, and first is blind
Target angle α between the side wall in hole 01 and the thickness direction of underlay substrate 10 can be less than or equal to 30 degree.
Step 403: conductive metal layer is formed on the first surface of underlay substrate, conductive metal layer covers the first blind hole
Bottom and at least partly side wall.
It in this step, can be by sputtering (Sputter) technique or evaporation process, in 10 first surface of underlay substrate
S1, the bottom of the first blind hole 01 and at least partly side wall formed conductive metal layer 13, as shown in Figure 6.Wherein, conductive metal layer 13
The first surface S1 of underlay substrate 10 can be extended to from some or all of the first blind hole 01 side wall.It is subsequent in underlay substrate
The device being arranged on one surface S1 can be partially ON with the conductive metal layer on first surface S1.In practical applications,
Thickness proportion between the thickness of conductive metal layer 13 and the thickness of underlay substrate 10 can be greater than or equal to 0.1%, and be less than
Or it is equal to 1%.The thickness of conductive metal layer 13 can be greater than or equal to 1 micron, and be less than or equal to 10 microns.Conductive metal layer
13 material can be at least one of copper, aluminium, silver, titanium.
Step 404: forming the close to the side of underlay substrate first surface in the conductive metal layer being located in the first blind hole
One insulating layer.
It in this step, can be by solwution method, on the conductive metal layer 13 being located in the first blind hole 01 referring to Fig. 7
Coat the first insulating layer 12.Wherein, the thickness of the first insulating layer 12 can be less than or equal to the thickness and conduction of the first blind hole 01
Thickness difference between the thickness of metal layer 13 that is to say that the surface of the first insulating layer 12 can be lower than the first of underlay substrate 10
Surface S1, or it is concordant with first surface S1.
In addition, in practical applications, the material of the first insulating layer 12 can be able to bear high-temperature technology for polysiloxanes etc.
Organic insulating material, the present invention is not especially limit this.
Step 405: form the second blind hole on the second surface opposite with first surface of underlay substrate, the first blind hole with
Second blind hole constitutes through-hole.
In embodiments of the present invention, as shown in figure 8, can by hole knockouts such as laser borings, with underlay substrate
The second blind hole 02 is formed on one surface S1 opposite underlay substrate second surface S2.Wherein, the second blind hole 02 can penetrate substrate
The thickness of substrate 5%~20%.Wherein, the second blind hole 02 can extend to the first blind hole 01, to constitute with the first blind hole 01
Through-hole, correspondingly, the bottom of the second blind hole 02 is conductive metal layer 13, so that conductive metal layer 13 can be from the second blind hole 02
Expose.
Step 406: second insulating layer is formed in the second blind hole, second insulating layer, which is provided with, extends to conductive metal layer
Via hole.
In this step, referring to Fig. 9, second insulating layer 14 can be filled in the second blind hole 02 by solwution method, so that
Second insulating layer 14 covers the bottom of the second blind hole 02 and at least partly then as shown in Figure 10 side wall can insulate to second
Layer 14 carries out patterned process, forms the via hole 141 for extending to conductive metal layer 13, that is to say can expose 02 bottom of the second blind hole
The partially electronically conductive metal layer 13 in portion, the bottom of via hole 141 are conductive metal layer 13.It is subsequent on underlay substrate second surface S2
The device of setting can be partially ON with the conductive metal layer of exposing second insulating layer via hole 141, thus the first table of underlay substrate
The device being arranged on the S1 of face, can be by extending to the via hole 141 and conductive gold of conductive metal layer 13 in second insulating layer 14
Belong to the device being arranged on layer 13 and underlay substrate second surface S2 to connect.
In practical applications, the thickness of second insulating layer 14 can be less than or equal to the depth of the second blind hole 02, that is to say
The surface of second insulating layer 14 can be lower than the second surface S2 of underlay substrate 10, or the second surface S2 with underlay substrate 10
Concordantly.In addition, in practical applications, the material of second insulating layer 14 may be that polysiloxanes etc. is able to bear high-temperature technology
Organic insulating material, the present invention is not especially limit this.
In practical applications, as shown in figure 3, the via hole 141 of second insulating layer 14 is perpendicular to underlay substrate thickness direction
On cross section can be circle, naturally it is also possible to be other shapes, and the center of the center of via hole 141 and the second blind hole 02 exists
It can be overlapped on underlay substrate thickness direction, naturally it is also possible to not be overlapped, the present invention is not especially limit this.
It is possible to further the preparation of the progress pixel circuit on the first surface S1 of underlay substrate 10, and in substrate
The preparation of the enterprising horizontal drive circuit of second surface S2 of substrate 10, it is of course also possible on the second surface S2 of underlay substrate 10
The preparation of pixel circuit, and the preparation of the enterprising horizontal drive circuit of first surface S1 in underlay substrate 10 are carried out, the present invention is real
It applies example and this is not especially limited.
In embodiments of the present invention, a underlay substrate can be provided first, then the shape on the first surface of underlay substrate
At the first blind hole, conductive metal layer is formed on the first surface of underlay substrate, conductive metal layer covers the bottom of the first blind hole
And side wall, later first can be formed close to the side of underlay substrate first surface in the conductive metal layer being located in the first blind hole
Insulating layer, and then the second blind hole can be formed on the second surface opposite with first surface of underlay substrate, the first blind hole with
Second blind hole constitutes through-hole, can form second insulating layer in the second blind hole later, second insulating layer is provided with to extend to and lead
The via hole of metal layer.In embodiments of the present invention, the partially electronically conductive metal layer on underlay substrate first surface, can be used for
One of pixel circuit and driving circuit are connected, and is revealed from the second insulating layer via bottom of underlay substrate second surface side
Partially electronically conductive metal layer out, can be used for connecting the other of pixel circuit and driving circuit, so as in underlay substrate
Side prepare pixel circuit, driving circuit is arranged in the other side, and pixel circuit and driving circuit can pass through second insulating layer
In extend to conductive metal layer via hole and conductive metal layer connection.In this way, pixel circuit and driving circuit can be set respectively
Two surfaces opposite in underlay substrate are set, there is no need to which frame region is arranged to be blocked, so as to reduce display device
Frame region, and then can be improved the screen accounting of display device.
Embodiment three
The embodiment of the invention also discloses a kind of array substrates, including above-mentioned underlay substrate, and are separately positioned on substrate
Pixel circuit and driving circuit in the opposite first surface and second surface of substrate；Wherein, pixel circuit and driving circuit are logical
The via hole for extending to conductive metal layer and conductive metal layer connection are crossed in second insulating layer.
In embodiments of the present invention, array substrate includes underlay substrate, and underlay substrate includes through-hole, and through-hole is interior along substrate base
Plate first surface is directed toward on the direction of underlay substrate second surface, has been stacked the first insulating layer, conductive metal layer, second absolutely
Edge layer；Wherein, conductive metal layer extends to the first surface of underlay substrate along the side wall of through-hole；Second insulating layer is provided with extension
To the via hole of conductive metal layer；The first surface of underlay substrate and the second surface of underlay substrate are opposite.In the embodiment of the present invention
In, the partially electronically conductive metal layer on underlay substrate first surface can be used for connecting one in pixel circuit and driving circuit
Person, and the partially electronically conductive metal layer exposed from the second insulating layer via bottom of underlay substrate second surface side, can be used for connecting
The other of pixel circuit and driving circuit are connect, prepares pixel circuit so as to the side in underlay substrate, the other side is set
Set driving circuit, and pixel circuit and driving circuit can by extended in second insulating layer conductive metal layer via hole and
Conductive metal layer connection.In this way, pixel circuit and driving circuit can be separately positioned on two opposite surfaces of underlay substrate, because
No setting is required that frame region is blocked for this, so as to reduce the frame region of display device, and then can be improved display dress
The screen accounting set.
Example IV
The embodiment of the invention also discloses a kind of display devices, including above-mentioned array substrate.
In embodiments of the present invention, display device can be with are as follows: liquid crystal display panel, Electronic Paper, OLED (Organic
Light-Emitting Diode, Organic Light Emitting Diode) panel, mobile phone, tablet computer, television set, display, notebook electricity
Any products or components having a display function such as brain, Digital Frame, navigator.
In embodiments of the present invention, the array substrate of display device includes underlay substrate, and underlay substrate includes through-hole, through-hole
It is interior along underlay substrate first surface be directed toward underlay substrate second surface direction along, be stacked the first insulating layer, conductive gold
Belong to layer, second insulating layer；Wherein, conductive metal layer extends to the first surface of underlay substrate along the side wall of through-hole；Second insulation
Layer is provided with the via hole for extending to conductive metal layer；The first surface of underlay substrate and the second surface of underlay substrate are opposite.?
In the embodiment of the present invention, partially electronically conductive metal layer on underlay substrate first surface can be used for connecting pixel circuit and drive
One of dynamic circuit, and the partially electronically conductive metal exposed from the second insulating layer via bottom of underlay substrate second surface side
Layer, can be used for connecting the other of pixel circuit and driving circuit, so as in the side of underlay substrate preparation pixel electricity
Road, driving circuit is arranged in the other side, and pixel circuit and driving circuit can be by extending to conductive metal in second insulating layer
Via hole and the conductive metal layer connection of layer.In this way, can be separately positioned on underlay substrate opposite for pixel circuit and driving circuit
Two surfaces, there is no need to which frame region is arranged to be blocked, so as to reduce the frame region of display device, Jin Erneng
Enough improve the screen accounting of display device.
For the various method embodiments described above, for simple description, therefore, it is stated as a series of action combinations, but
Be those skilled in the art should understand that, the present invention is not limited by the sequence of acts described because according to the present invention, certain
A little steps can be performed in other orders or simultaneously.Secondly, those skilled in the art should also know that, it is retouched in specification
The embodiment stated belongs to preferred embodiment, and related actions and modules are not necessarily necessary for the present invention.
All the embodiments in this specification are described in a progressive manner, the highlights of each of the examples are with
The difference of other embodiments, the same or similar parts between the embodiments can be referred to each other.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, commodity or the equipment that include a series of elements not only include that
A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, commodity or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in process, method, commodity or the equipment for including the element.
Above to a kind of underlay substrate provided by the present invention and preparation method thereof, array substrate and display device, into
It has gone and has been discussed in detail, used herein a specific example illustrates the principle and implementation of the invention, the above implementation
The explanation of example is merely used to help understand method and its core concept of the invention；Meanwhile for the general technology people of this field
Member, according to the thought of the present invention, there will be changes in the specific implementation manner and application range, in conclusion this explanation
Book content should not be construed as limiting the invention.
Claims (15)
1. a kind of underlay substrate, which is characterized in that the underlay substrate includes through-hole, along the underlay substrate the in the through-hole
One surface is directed toward on the direction of the underlay substrate second surface, has been stacked the first insulating layer, conductive metal layer, second absolutely
Edge layer；Wherein,
The conductive metal layer extends to the first surface of the underlay substrate along the side wall of the through-hole；
The second insulating layer is provided with the via hole for extending to the conductive metal layer；
The first surface of the underlay substrate is opposite with the second surface of the underlay substrate.
2. underlay substrate according to claim 1, which is characterized in that the cross section of first insulating layer is in the through-hole
Interior is inverted trapezoidal or rectangle；Wherein, the cross section is parallel to the thickness direction of the underlay substrate.
3. underlay substrate according to claim 2, which is characterized in that the side that the through-hole is contacted with the conductive metal layer
Target angle between wall and the thickness direction of the underlay substrate is less than or equal to 30 degree.
4. underlay substrate according to claim 1, which is characterized in that the thickness of the second insulating layer and the substrate base
First thickness ratio between the thickness of plate is greater than or equal to 5%, and is less than or equal to 20%.
5. underlay substrate according to claim 1, which is characterized in that the thickness of the conductive metal layer and the substrate base
Second thickness ratio between the thickness of plate is greater than or equal to 0.1%, and is less than or equal to 1%.
6. underlay substrate according to claim 1, which is characterized in that the thickness of the conductive metal layer is greater than or equal to 1
Micron, and it is less than or equal to 10 microns.
7. underlay substrate according to claim 1, which is characterized in that the thickness of first insulating layer is less than or equal to institute
State the thickness of underlay substrate first surface to the conductive metal layer；
And/or
The thickness of the second insulating layer is less than or equal to the thickness of the underlay substrate second surface to the conductive metal layer.
8. underlay substrate according to claim 1, which is characterized in that the material of the conductive metal layer be copper, aluminium, silver,
At least one of titanium.
9. underlay substrate according to claim 1, which is characterized in that first insulating layer and/or second insulation
The material of layer is polysiloxanes.
10. underlay substrate according to claim 1, which is characterized in that the material of the underlay substrate is silicon, glass or poly-
Acid imide.
11. a kind of array substrate, which is characterized in that including the described in any item underlay substrates of claim 1-10, and respectively
Pixel circuit and driving circuit in the opposite first surface and second surface of the underlay substrate are set；
Wherein, the pixel circuit and the driving circuit are by extending to the conductive metal layer in the second insulating layer
Via hole and conductive metal layer connection.
12. a kind of display device, which is characterized in that including the array substrate described in claim 11.
13. a kind of preparation method of underlay substrate, which is characterized in that the described method includes:
One underlay substrate is provided；
The first blind hole is formed on the first surface of the underlay substrate；
Conductive metal layer is formed on the first surface of the underlay substrate, the conductive metal layer covers first blind hole
Bottom and at least partly side wall；
The is formed close to the side of the underlay substrate first surface in the conductive metal layer being located in first blind hole
One insulating layer；
Form the second blind hole on the second surface opposite with the first surface of the underlay substrate, first blind hole with
Second blind hole constitutes through-hole；
Second insulating layer is formed in second blind hole, the second insulating layer, which is provided with, extends to the conductive metal layer
Via hole.
14. according to the method for claim 13, which is characterized in that described to form the second insulation in second blind hole
Layer, comprising:
By solwution method, second insulating layer is filled in second blind hole；
Patterned process is carried out to the second insulating layer, forms the via hole for extending to the conductive metal layer.
15. according to the method for claim 13, which is characterized in that described to be formed on the first surface of the underlay substrate
Conductive metal layer, comprising:
By sputtering technology or evaporation process, in the first surface of the underlay substrate, the bottom of first blind hole and at least
Partial sidewall forms conductive metal layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910238145.8A CN109935168B (en) | 2019-03-27 | 2019-03-27 | Substrate base plate and preparation method thereof, array base plate and display device |
| PCT/CN2020/074976 WO2020192286A1 (en) | 2019-03-27 | 2020-02-13 | Substrate and preparation method therefor, and array substrate and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910238145.8A CN109935168B (en) | 2019-03-27 | 2019-03-27 | Substrate base plate and preparation method thereof, array base plate and display device |
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| CN109935168B CN109935168B (en) | 2021-02-26 |
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|---|---|---|---|---|
| WO2020192286A1 (en) * | 2019-03-27 | 2020-10-01 | 京东方科技集团股份有限公司 | Substrate and preparation method therefor, and array substrate and display device |
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| CN109935168B (en) | 2021-02-26 |
| WO2020192286A1 (en) | 2020-10-01 |
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