CN109904198A - A kind of device and production method, display panel and production method and display device - Google Patents
A kind of device and production method, display panel and production method and display device Download PDFInfo
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- CN109904198A CN109904198A CN201910132319.2A CN201910132319A CN109904198A CN 109904198 A CN109904198 A CN 109904198A CN 201910132319 A CN201910132319 A CN 201910132319A CN 109904198 A CN109904198 A CN 109904198A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 257
- 239000004020 conductor Substances 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims description 81
- 229910052751 metal Inorganic materials 0.000 claims description 81
- 238000001312 dry etching Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 239000000843 powder Substances 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 238000002679 ablation Methods 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 63
- 239000004642 Polyimide Substances 0.000 description 24
- 229920001721 polyimide Polymers 0.000 description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000001035 drying Methods 0.000 description 9
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 8
- 238000000608 laser ablation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of device, production method, the production method of flexible display panels, flexible display panels and display device, the device includes rigid substrate；The first flexible substrate layer being formed in the rigid substrate；The dielectric layer being formed in first flexible substrate layer；The second flexible substrate layer being formed on the dielectric layer；Through-hole penetrates through second flexible substrate layer and the dielectric layer；At least formed at the through-hole side wall and the plain conductor of bottom；And cover the planarization layer of second flexible substrate layer and the plain conductor.Embodiment provided by the invention, which is able to solve, to be removed over etching caused by rigid substrate in the prior art and causes poor contact problem with control circuit, and realizes the uniform etching to the dielectric layer.
Description
Technical field
The present invention relates to field of display technology, more particularly to a kind of device and production method, the system of flexible display panels
Make method, flexible display panels and display device.
Background technique
With the development of display technology, the cry that user designs display device Rimless is higher and higher.To realize display
The Rimless of device designs, and currently available technology is that control circuit is arranged soft in the manufacturing process of flexible display apparatus
The side of property other film layers of the substrate far from the display panel, by forming through-hole and in the through hole on flexible substrates
The signal of the array substrate of the display panel is led to control circuit by production plain conductor.However in the production process, exist
After the preparation of other film layers that the display panel is formed after through-hole and completed in flexible substrate, when removing rigid substrate and flexibility
When substrate, over etching or the flexible substrate easily occur in dry etching for the flexible substrate because laser ablation generates production
The raw carbonized powder being largely difficult to clean off, is easy to cause the plain conductor and control circuit poor contact, thus in certain journey
The display effect of display device is influenced on degree.
Summary of the invention
At least one to solve the above-mentioned problems, first aspect present invention provides a kind of device, including
Rigid substrate；
The first flexible substrate layer being formed in the rigid substrate；
The dielectric layer being formed in first flexible substrate layer；
The second flexible substrate layer being formed on the dielectric layer；
Through-hole penetrates through second flexible substrate layer and the dielectric layer；
At least formed at the through-hole side wall and the plain conductor of bottom；And
Cover the planarization layer of second flexible substrate layer and the plain conductor.
Further, further include
Metal layer is formed between first flexible substrate layer and the dielectric layer.
Further, the material of the metal layer is Mo, and the material of the dielectric layer is silica.
Second aspect of the present invention provides a kind of production method of device, including
The first flexible substrate layer is formed in rigid substrate；
Dielectric layer is formed in first flexible substrate layer；
The second flexible substrate layer is formed on the dielectric layer；
Form the through-hole for penetrating through second flexible substrate layer and the dielectric layer；
At least plain conductor is formed in the through-hole side wall and bottom；
Form the planarization layer for covering second flexible substrate layer and the plain conductor；
Array of display panel is formed on the planarization layer；
It removes the rigid substrate and removes first flexible substrate layer.
Further, the method also includes
Metal layer is formed in first flexible substrate layer；
The dielectric layer is formed on the metal layer,
Wherein the through-hole is formed to expose the layer on surface of metal.
Further, it the removing rigid substrate and removes first flexible substrate layer and further comprises
Pass through rigid substrate described in laser lift-off；
First flexible substrate layer is removed by the first dry etching；
The metal layer is removed by the second dry etching；
Or
By the first flexible substrate layer described in rigid substrate layer, ablation described in laser lift-off and generate carbonized powder；
The metal layer is bombarded by dry etching to remove the carbonized powder and metal layer.
Third aspect present invention provides a kind of production method of flexible display panels, including
The first flexible substrate layer is formed in rigid substrate；
Dielectric layer is formed in first flexible substrate layer；
The second flexible substrate layer is formed on the dielectric layer；
Form the through-hole for penetrating through second flexible substrate layer and the dielectric layer；
At least plain conductor is formed in the through-hole side wall and bottom；
Form the planarization layer for covering second flexible substrate layer and the plain conductor；
Array of display panel is formed on the planarization layer；
It removes the rigid substrate and removes first flexible substrate layer；
Pad is formed on the plain conductor of exposing；
And it is electrically connected connection control circuit by the pad.
Further, the method also includes
Metal layer is formed in first flexible substrate layer；
The dielectric layer is formed on the metal layer, wherein the through-hole is formed to expose the layer on surface of metal.
Further, it the removing rigid substrate and removes first flexible substrate layer and further comprises:
Pass through rigid substrate described in laser lift-off；
First flexible substrate layer is removed by the first dry etching；
The metal layer is removed by the second dry etching；
Or
By the first flexible substrate layer described in rigid substrate layer, ablation described in laser lift-off and generate carbonized powder；
The metal layer is bombarded by dry etching to remove the carbonized powder and metal layer.
Fourth aspect present invention provides a kind of flexible display panels, including
Flexible substrate layer；
The dielectric layer being formed on flexible substrate layer first surface；
Penetrate through the through-hole of the flexible substrate layer and the dielectric layer；
At least plain conductor is formed in the through-hole side wall and bottom；
The covering second surface formed on the flexible substrate layer second surface opposite with the first surface
And the planarization layer of plain conductor；
The array of display panel formed on the planarization layer；
The pad formed on the plain conductor of the bottom；
The control circuit being electrically connected with the pad.
Fifth aspect present invention provides a kind of display device, including flexible display panels described in fourth aspect.
Beneficial effects of the present invention are as follows:
The present invention formulates the production side of a kind of device and production method, flexible display panels for existing problem at present
Method, flexible display panels and display device, by the first flexible substrate layer and dielectric layer being formed in rigid substrate, so that
It removes the rigid substrate and avoids over etching during removing the first flexible substrate layer, further pass through middle layer realization pair
The uniform etching of dielectric layer effectively improves golden in the through-hole in the second flexible substrate to compensate for the problems of the prior art
The electric conductivity for belonging to conducting wire, enables plain conductor normally to contact with control circuit, and then improves the display effect of display device
Fruit.
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
Fig. 1 shows the schematic diagram of an embodiment in the prior art；
Fig. 2 shows the schematic diagrames of another embodiment in the prior art；
Fig. 3 shows the structural schematic diagram of device described in one embodiment of the present of invention；
Fig. 4 shows the structural schematic diagram of device described in another embodiment of the invention；
Fig. 5 shows the flow chart of device manufacture method described in one embodiment of the present of invention；
Fig. 6 shows the flow chart of flexible display panels production method described in one embodiment of the present of invention；
Fig. 7 shows the structural schematic diagram before the removing of flexible display panels described in one embodiment of the present of invention；
Fig. 8 shows the structural schematic diagram of flexible display panels described in one embodiment of the present of invention.
1-rigid substrate 2-first layer, 3-second layer, 4-middle layer, 5-flexible substrate
6-metallic conductor 7-planarization layer, 8-array substrate, 9-luminescent devices
10-cover board 11-glue-line, 12-pad, 13-control circuits
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
In the prior art, by forming through-hole on flexible substrate polyimides, and production copper conductor is used in through-holes
The control circuit that other film layer sides of the flexible substrate far from the display panel are set and the display surface are connected in vertical
The array substrate of plate, to realize the Rimless of display panel.
As shown in Figure 1 it is an embodiment in the prior art: uses small-power (22mJ/cm2) laser lift-off glass
Afterwards, remaining 1 μm of polyimides is removed by the method for dry etching, i.e., O is passed through into dry-process etching cavity2Gas makes to remain
Remaining polyimide matrix ashing, but dry etch process is easy to produce etching when large area is ashed polyimides unevenly,
Cause copper conductor in conjunction with control circuit when partial circuit cannot completely attach to or because over etching cause it is sub- in flexible substrate polyamides
Array substrate or copper conductor on amine such as fall off at the bad phenomenons.
It is illustrated in figure 2 another embodiment in the prior art: using high power laser energy (300mJ/cm2) stripping
Polyimides from puncherless part, puncherless part polyimide thickness are 1 μm, under this laser power parameters, 1 μ m-thick
Laser is completely ablated, the copper conductor deposited in exposed hole.But in the process, ablation polyimides can generate a large amount of carbonizations
Powder removes carbonized particles using the methods of deionization wind division, epoxide-resin glue sticky removing method, but can only remove particle size
Biggish carbonized powder still remains a large amount of micron-sized powder, and it is bad with control circuit in conjunction with to will lead to subsequent copper conductor, contacts
The bad phenomenons such as resistance is excessive.
One of in order to solve the above problem, as shown in figure 3, An embodiment provides a kind of device, including it is hard
Property substrate 1；The first flexible substrate layer 2 being formed in the rigid substrate 1；It is formed in first flexible substrate layer 2
Dielectric layer 3；The second flexible substrate layer 5 being formed on the dielectric layer 3；Through-hole penetrates through second flexible substrate layer 5 and institute
State dielectric layer 3；At least formed at the through-hole side wall and the plain conductor of bottom 6；And covering second flexible substrate layer 5
And the planarization layer 7 of the plain conductor 6.
In a specific example, the first layer of the device is rigid substrate 1, such as glass；Described first is flexible
Substrate layer 2 is flexible material, such as is selected as the polyimides of flexible substrate；The material of the dielectric layer 3 be with it is first soft
Property substrate layer 2 there is good cementability and meet the dry etching condition different from first flexible substrate layer 2,
Silica is used in this example；Second flexible substrate layer 5 can be identical or different with the first flexible substrate layer 2, at this
Polyimides identical with first flexible substrate layer 2 is used in example；The plain conductor 6 is selected differently from the first flexibility
The material of the dry etching condition of substrate layer 2, in this example using metallic copper as plain conductor；The planarization layer 7
Materials'use conventional material.Specifically, first flexible substrate layer 2 be set as 1 μm of thickness of polyimides with ensure with firmly
Property substrate 1 and 3 silica of dielectric layer there is good binding force, and meet the system of other film layers of the subsequent display panel
Make condition；The dielectric layer 3 is set as the silica of thickness 500nm to meet with the adhesion strength of the second flexible substrate layer 5 simultaneously
It can stop the etching to the first flexible substrate layer.
After low-power laser is removed, first flexible substrate layer 2 is removed using dry etching, since silica has
There is the dry etching condition different from polyimides, selection is suitable for the gas of polyimides dry etching, while the gas
It is unable to etching silicon dioxide, such as oxygen.During dry etching, O is passed through into dry-process etching cavity2Gas, it is described
Oxygen is ashed with polyimides of the stronger plasma form of chemical activity to the first flexible substrate layer 2；Due to described
Silica is different from the etching condition of polyimides, and in dry etching, the silica of the dielectric layer 3 is as etching
Barrier layer, after etching polyimides, the etch rate of the dry etching stops in the second layer of silica, to realize
To the uniform etching of the dielectric layer 3.It is worth noting that those skilled in the art should select to do according to practical application material
The gas of method etching, to remove first flexible substrate layer, details are not described herein.
In view of using high power laser energy remove rigid substrate when there are the problem of, in a preferred embodiment
In, as shown in figure 4, the device further includes metal layer 4, be formed in first flexible substrate layer 2 and the dielectric layer 3 it
Between, the etching condition of the metal layer 4 is different from first flexible substrate layer 2, each film layer of dielectric layer 3 and display panel
Etching condition.In the present embodiment, metal layer Mo is added between the first flexible substrate layer 2 and the dielectric layer 3, on the one hand,
The metal layer Mo is in the production process as the etching barrier layer for etching the through-hole, when etching second flexible substrate layer
After dielectric layer, etch rate stops the etching homogeneity so that it is guaranteed that the through-hole in metal layer Mo；On the other hand in laser
In stripping process, metal layer Mo can prevent from incident laser reflection to the first flexible substrate layer 2 to show described in laser effect
Show the performance of other film layers of panel；Simultaneously for during laser lift-off because the first flexible substrate layer of laser ablation 2 generate
A large amount of carbonized particles, during using dry etching, plasma bombardment metal layer Mo and carbonization that dry etching generates
Particle makes described metal Mo layers and carbonized particles gasification, and is taken away by the atmosphere recycle system of dry-process etching cavity, thus real
Now thoroughly remove carbonized powder.It is worth noting that meet element manufacturing, laser lift-off and the requirement of dry etching, it is described
The needs of metal layer 4 are combined closely with the first flexible substrate layer 2 and dielectric layer 3, and the etching of the dry etching of the metal layer 4
Condition is different from the first flexible substrate layer 2, the etching condition of other film layers of dielectric layer 3 and display panel, while should also expire
The technique of subsequent other film layers that display panel is made on the device architecture of foot requires and is shifting the display panel
During requirement to mechanics, therefore those skilled in the art should select first flexible substrate according to practical application
The material of layer, metal layer and dielectric layer is to meet production requirement.
As shown in figure 5, one embodiment of the application also provides the production method of above-mentioned device, comprising: in rigid substrate
The first flexible substrate layer of upper formation；Dielectric layer is formed in first flexible substrate layer；Second is formed on the dielectric layer
Flexible substrate layer；Form the through-hole for penetrating through second flexible substrate layer and the dielectric layer；At least in the through-hole side wall and
Plain conductor is formed on bottom；Form the planarization layer for covering second flexible substrate layer and the plain conductor；Described
Array of display panel is formed on planarization layer；It removes the rigid substrate and removes first flexible substrate layer.
Firstly, as shown in figure 3, coated on 1 glass substrate of rigid substrate and solidify a strata acid imide formed it is first soft
Property substrate layer 2, to guarantee that first flexible substrate layer 2 and glass substrate 1, dielectric layer 3 have enough binding forces, described the
The thickness of the polyimides of one flexible substrate layer 2 is set as 1 μm.
Second, the metallization medium layer 3 in the first flexible substrate layer 2, the dielectric layer 3 uses silica, to increase by two
The thickness of blocking of the silica to dry etching, the silica of the dielectric layer 3 is set as 500nm.
Third coats on 3 silica of dielectric layer and solidifies a strata acid imide the second flexible substrate layer 5 of formation, institute
State the flexible substrate that the second flexible substrate layer 5 is flexible display panels.
4th, form the through-hole for penetrating through second flexible substrate layer and the dielectric layer.Perforation is formed by patterning
The through-hole of second flexible substrate layer 5 and the dielectric layer 3 makes PR in the second flexible substrate layer 5 in the present embodiment
Glue exposure mask is simultaneously successively passed through O2And CF4With etching through hole.
5th, at least plain conductor is formed in the through-hole side wall and bottom.Deposited metal copper conduct in the through hole
Plain conductor 6, in the present embodiment, the plain conductor 6 cover via bottoms, side wall and extend to the second flexible substrate layer 5
Part of the surface, further, after forming the planarization layer for covering second flexible substrate layer 5, the plain conductor 6 into
One step extends to the surface of the planarization layer and exposing, is contacted for the grid with display panel.Meanwhile plain conductor
6 other end is used to be electrically connected after removing rigid substrate and the first flexible substrate layer of removal with control circuit.
6th, form the planarization layer 7 for covering second flexible substrate layer and the plain conductor.
7th, array of display panel (not shown) is formed on the planarization layer, that is, completes subsequent display panel
Production, herein with no restrictions.
8th, it removes the rigid substrate and removes first flexible substrate layer.In the present embodiment, using small-power
(22mJ/cm2) 1 glass of laser lift-off rigid substrate, in stripping process, the first flexible substrate layer 2 described in the laser ablation
Polyimides a part.First flexible substrate layer 2 is removed by dry etching to expose the plain conductor 6 and institute
State dielectric layer.In this example, it is passed through oxygen gas in dry-process etching cavity and etches first flexible substrate layer 2, so that
The polyimides gasifies and is taken away by gas-circulating system, can be realized the cleaning effect to first flexible substrate layer 2；
Simultaneously because there is the silica of the dielectric layer 3 dry method different from the polyimides of first flexible substrate layer 2 to carve
Erosion condition, after the polyimides of first flexible substrate layer 2 completes etching, etch rate stops in the dielectric layer 3, from
And the uniform etching for the dielectric layer 3 that avoids the over etching to flexible substrate layer in the prior art, while can also realize, i.e., for
The plain conductor 6 and dielectric layer 3 of the exposing are planarized, and achieve the purpose that contact surface is smooth.
It is complete in order to ensure required through-hole when through patterning etching through hole during making the device
Property, a certain amount of over etching is usually carried out, then after etching the second flexible substrate layer 5 and dielectric layer 3, has also etched a part
First flexible substrate layer 2, then the plain conductor 6 of subsequent deposition is shown as irregular, is easy to cause subsequent and control circuit
The problem of poor contact, although can control etching degree by controlling etch period, there are still the possibility of poor contact.?
In one preferred embodiment, as shown in figure 4, the method also includes forming metal layer in first flexible substrate layer；
The dielectric layer is formed on the metal layer, wherein the through-hole is formed to expose the layer on surface of metal.
In the present embodiment, metal layer Mo is formed in first flexible substrate layer, is formed on the metal layer Mo
The dielectric layer, then when etching the through-hole after forming the second flexible substrate layer on dielectric layer, since etching condition is different, when
After etching second flexible substrate layer and dielectric layer, etch rate stops in the metal layer, exposes metal layer Mo, the gold
Belong to layer Mo as etching barrier layer to avoid in the prior art to the over etching of flexible substrate layer, so that is formed described leads to
The depth in hole is consistent, then the form of the plain conductor is consistent.
In a preferred embodiment, described to remove the rigid substrate and remove first flexible substrate layer into one
Step includes: by rigid substrate described in laser lift-off；First flexible substrate layer is removed by the first dry etching；Pass through
Two dry etchings remove the metal layer.In the present embodiment, using small-power (22mJ/cm2) laser lift-off rigid substrate,
In stripping process, the laser ablation separates first flexible substrate layer and rigid substrate, first described in the laser ablation
A part of the polyimides of flexible substrate layer.The polyamides of first flexible substrate layer is removed by first time dry method method etching
Imines is passed through oxygen gas in dry-process etching cavity and is ashed the polyimides；Then clear by second of dry etching
Except the metal layer Mo, i.e., chlorine gas is passed through in dry-process etching cavity, the chlorine gas is bombarded with plasma form
The metal Mo is simultaneously taken away by gas-circulating system.Since the presence of metal layer passes through two in low-power laser stripping process
Secondary dry etching can be realized the removing to first flexible substrate layer and metal layer, since there are different dry method for metal layer
Etching condition, after the completion of metal layer etching, etch rate stops in the dielectric layer, to avoid to the second flexible liner
Bottom carries out over etching, realizes uniformly etching, i.e., the metallic conductor and dielectric layer of the exposing is planarized, reach and connect
The smooth purpose of contacting surface.
In another preferred embodiment, the removing rigid substrate and remove first flexible substrate layer into
One step includes: by the first flexible substrate layer described in rigid substrate layer, ablation described in laser lift-off and to generate carbonized powder；Pass through
Dry etching bombards the metal layer to remove the carbonized powder and metal layer.In the present embodiment, using high power laser
Energy (300mJ/cm2) removing rigid substrate when, incident laser reflection can be returned the first flexible substrate layer by the metal layer
To increase the energy for the laser that the first flexible substrate layer is absorbed, to reduce the need in stripping process to laser energy
It asks；And while the laser reflection of irradiation is returned the first flexible substrate layer, the laser of irradiation is also avoided to display panel
The influence of each film layer.High power laser energy (300mJ/cm2) removing rigid substrate when ablation described in the first flexible substrate layer simultaneously
A large amount of carbonized powders are remained, using metal layer Mo described in dry etching to remove the carbonized powder.I.e. in dry-process etching cavity
In be passed through chlorine gas, the chlorine gas bombards the metal Mo and carbonized powder with plasma form, and is followed by gas
Loop system is taken away, to realize the removing to the first flexible substrate layer ablation remaining carbonized powder and metal layer.Due to
The dry etching condition of metal layer is different from the dry etching condition of dielectric layer and plain conductor, completes when the metal layer etches
Afterwards, it is not reacted due to chlorine with the metallic copper of the silica of dielectric layer and plain conductor, etch rate is in the dielectric layer
Stop at the plain conductor of through hole, to avoid carrying out over etching to the second flexible substrate layer, is carved simultaneously for through dry method
The metallic conductor and dielectric layer exposed after erosion is planarized, and achievees the purpose that contact surface is smooth.
It should be noted that those skilled in the art should select suitable etching according to the object to be etched of practical application
Method and etachable material etch for design criteria, herein no longer the uniform of through-hole with that can realize under different stripping conditions
It repeats.
On the basis of above-mentioned device, as shown in fig. 6, one embodiment of the application also provides a kind of flexible display panels
Production method, including the first flexible substrate layer is formed in rigid substrate；Medium is formed in first flexible substrate layer
Layer；The second flexible substrate layer is formed on the dielectric layer；It is formed and penetrates through second flexible substrate layer and the dielectric layer
Through-hole；At least plain conductor is formed in the through-hole side wall and bottom；It is formed and covers second flexible substrate layer and described
The planarization layer of plain conductor；Array of display panel is formed on the planarization layer；It removes the rigid substrate and removes institute
State the first flexible substrate layer；Pad is formed on the plain conductor of exposing；And it is electrically connected connection control circuit by the pad.
In a specific example, as shown in Figure 7 and Figure 8, specific steps include:
Firstly, forming above-mentioned device, the part 1-7 as shown in Figure 7, detailed process is same as above, and details are not described herein.
Secondly, forming array substrate 8, luminescent device 9 and cover board 10 on above-mentioned device, it is all made of existing step and technique
Production, details are not described herein.It is worth noting that for the Rimless setting for realizing display device, the luminescent device 9 is electroluminescent
Luminescent device, such as Micro-LED or OLED, those skilled in the art should be designed to meet according to practical application scene
Actual demand.
Again, it removes the rigid substrate and removes first flexible substrate layer, detailed process is same as above, no longer superfluous herein
It states.
Finally, as shown in figure 8, on the plain conductor 6 of exposing formed pad 12, and by the pad 12 be electrically connected
Control circuit 13, the control circuit 13 are Nian Jie with dielectric layer to form flexible display panels by glue-line 11.
In view of through-hole described in flexible display panels manufacturing process formation and removing rigid substrate when incident laser
Influence to each film layer of display panel, in a preferred embodiment, the method also includes in first flexible substrate
Metal layer is formed on layer；The dielectric layer is formed on the metal layer, wherein the through-hole is formed to expose the metal
Layer surface.Then etching barrier layer of metal layer during making display panel as the etching through-hole is to ensure
The etching homogeneity for stating through-hole, when removing rigid substrate by incident laser reflection to the first flexible substrate layer 2 to prevent from swashing
Shadow rings the performance of other film layers of the display panel.
In another preferred embodiment, the removing rigid substrate and remove first flexible substrate layer into
One step includes: by rigid substrate described in laser lift-off；First flexible substrate layer is removed by the first dry etching；Pass through
Second dry etching removes the metal layer.Specifically, when using small-power (22mJ/cm2) laser lift-off rigid substrate when, institute
It states laser ablation and separates first flexible substrate layer and rigid substrate, the first flexible substrate layer described in the laser ablation is gathered
Imido a part.The polyimides that first flexible substrate layer is removed by first time dry method method etching, i.e., in dry method
It is passed through oxygen gas in etching cavity and is ashed the polyimides；Then the metal layer is removed by second of dry etching
Mo, i.e., be passed through chlorine gas in dry-process etching cavity, and the chlorine gas bombards the metal Mo simultaneously with plasma form
It is taken away by gas-circulating system.Due to the presence of metal layer, in low-power laser stripping process, pass through dry etching energy twice
Enough removings realized to first flexible substrate layer and metal layer, since metal layer is there are different dry etching conditions, when
After the completion of the metal layer etching, etch rate stops in the dielectric layer, to avoid carrying out the second flexible substrate layer
Etching realizes uniformly etching, i.e., the metallic conductor and dielectric layer of the exposing is planarized, it is smooth to reach contact surface
Purpose.
In another preferred embodiment, the removing rigid substrate and remove first flexible substrate layer into
One step includes: by the first flexible substrate layer described in rigid substrate layer, ablation described in laser lift-off and to generate carbonized powder；Pass through
Dry etching bombards the metal layer to remove the carbonized powder and metal layer.Specifically, when using high power laser energy
(300mJ/cm2) removing rigid substrate when, the metal layer incident laser reflection can be returned the first flexible substrate layer to
The energy for the laser that the first flexible substrate layer is absorbed is increased, to reduce the demand in stripping process to laser energy；And
And while the laser reflection of irradiation is returned the first flexible substrate layer, each film layer of the laser to display panel of irradiation is also avoided
Influence.High power laser energy (300mJ/cm2) removing rigid substrate when ablation described in the first flexible substrate layer and remain big
Carbonized powder is measured, using metal layer Mo described in dry etching to remove the carbonized powder.It is passed through in dry-process etching cavity
Chlorine gas, the chlorine gas bombard the metal Mo and carbonized powder with plasma form, and by gas-circulating system
It takes away, to realize the removing to the first flexible substrate layer ablation remaining carbonized powder and metal layer.Due to metal layer
Dry etching condition it is different from the dry etching condition of dielectric layer and plain conductor, when the metal layer etching after the completion of, by
It is not reacted in chlorine with the metallic copper of the silica of dielectric layer and plain conductor, etch rate is in the dielectric layer and through-hole
Stop at the plain conductor at place, to avoid carrying out over etching to the second flexible substrate layer, reveals simultaneously for after dry etching
Metallic conductor and dielectric layer out is planarized, and achievees the purpose that contact surface is smooth.
One embodiment of the application also provides a kind of flexible display panels, including flexible substrate layer；It is formed in flexible liner
Dielectric layer on bottom first surface；Penetrate through the through-hole of the flexible substrate layer and the dielectric layer；At least in the through-hole side
Plain conductor is formed on wall and bottom；The covering formed on the flexible substrate layer second surface opposite with the first surface
The planarization layer of the second surface and plain conductor；The array of display panel formed on the planarization layer；At the bottom
The pad formed on the plain conductor in portion；The control circuit being electrically connected with the pad.The flexible display panels can be realized
Rimless setting is electroluminescence display panel, such as Micro-LED or OLED display panel.
One embodiment of the application also provides a kind of display device, including above-mentioned flexible display panels.
The present invention formulates the production side of a kind of device and production method, flexible display panels for existing problem at present
Method, flexible display panels and display device, by the first flexible substrate layer and dielectric layer being formed in rigid substrate, so that
It removes the rigid substrate and avoids over etching during removing the first flexible substrate layer, further pass through middle layer realization pair
The uniform etching of dielectric layer effectively improves golden in the through-hole in the second flexible substrate to compensate for the problems of the prior art
The electric conductivity for belonging to conducting wire, enables plain conductor normally to contact with control circuit, and then improves the display effect of display device
Fruit.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (11)
1. a kind of device, which is characterized in that including
Rigid substrate；
The first flexible substrate layer being formed in the rigid substrate；
The dielectric layer being formed in first flexible substrate layer；
The second flexible substrate layer being formed on the dielectric layer；
Through-hole penetrates through second flexible substrate layer and the dielectric layer；
At least formed at the through-hole side wall and the plain conductor of bottom；And
Cover the planarization layer of second flexible substrate layer and the plain conductor.
2. device according to claim 1, which is characterized in that further include
Metal layer is formed between first flexible substrate layer and the dielectric layer.
3. device according to claim 2, which is characterized in that
The material of the metal layer is Mo, and the material of the dielectric layer is silica.
4. a kind of production method of device, which is characterized in that including
The first flexible substrate layer is formed in rigid substrate；
Dielectric layer is formed in first flexible substrate layer；
The second flexible substrate layer is formed on the dielectric layer；
Form the through-hole for penetrating through second flexible substrate layer and the dielectric layer；
At least plain conductor is formed in the through-hole side wall and bottom；
Form the planarization layer for covering second flexible substrate layer and the plain conductor；
Array of display panel is formed on the planarization layer；
It removes the rigid substrate and removes first flexible substrate layer.
5. according to the method described in claim 4, it is characterized in that, the method also includes
Metal layer is formed in first flexible substrate layer；
The dielectric layer is formed on the metal layer,
Wherein the through-hole is formed to expose the layer on surface of metal.
6. according to the method described in claim 5, it is characterized in that, the removing rigid substrate and to remove described first soft
Property substrate layer further comprises
Pass through rigid substrate described in laser lift-off；
First flexible substrate layer is removed by the first dry etching；
The metal layer is removed by the second dry etching；
Or
By the first flexible substrate layer described in rigid substrate layer, ablation described in laser lift-off and generate carbonized powder；
The metal layer is bombarded by dry etching to remove the carbonized powder and metal layer.
7. a kind of production method of flexible display panels, which is characterized in that including
The first flexible substrate layer is formed in rigid substrate；
Dielectric layer is formed in first flexible substrate layer；
The second flexible substrate layer is formed on the dielectric layer；
Form the through-hole for penetrating through second flexible substrate layer and the dielectric layer；
At least plain conductor is formed in the through-hole side wall and bottom；
Form the planarization layer for covering second flexible substrate layer and the plain conductor；
Array of display panel is formed on the planarization layer；
It removes the rigid substrate and removes first flexible substrate layer；
Pad is formed on the plain conductor of exposing；
And it is electrically connected connection control circuit by the pad.
8. the method according to the description of claim 7 is characterized in that the method also includes
Metal layer is formed in first flexible substrate layer；
The dielectric layer is formed on the metal layer, wherein the through-hole is formed to expose the layer on surface of metal.
9. according to the method described in claim 8, it is characterized in that, the removing rigid substrate and to remove described first soft
Property substrate layer further comprises:
Pass through rigid substrate described in laser lift-off；
First flexible substrate layer is removed by the first dry etching；
The metal layer is removed by the second dry etching；
Or
By the first flexible substrate layer described in rigid substrate layer, ablation described in laser lift-off and generate carbonized powder；
The metal layer is bombarded by dry etching to remove the carbonized powder and metal layer.
10. a kind of flexible display panels, which is characterized in that including
Flexible substrate layer；
The dielectric layer being formed on flexible substrate layer first surface；
Penetrate through the through-hole of the flexible substrate layer and the dielectric layer；
At least plain conductor is formed in the through-hole side wall and bottom；
The covering second surface and gold formed on the flexible substrate layer second surface opposite with the first surface
Belong to the planarization layer of conducting wire；
The array of display panel formed on the planarization layer；
The pad formed on the plain conductor of the bottom；
The control circuit being electrically connected with the pad.
11. a kind of display device, which is characterized in that including flexible display panels described in any one of claim 10.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910132319.2A CN109904198B (en) | 2019-02-22 | 2019-02-22 | Device and manufacturing method, display panel and manufacturing method and display device |
| PCT/CN2020/075457 WO2020168989A1 (en) | 2019-02-22 | 2020-02-17 | Panel and manufacturing method and display device |
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| CN201910132319.2A CN109904198B (en) | 2019-02-22 | 2019-02-22 | Device and manufacturing method, display panel and manufacturing method and display device |
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| CN111508990A (en) * | 2020-04-29 | 2020-08-07 | 京东方科技集团股份有限公司 | Display back plate and manufacturing method thereof |
| WO2020168989A1 (en) * | 2019-02-22 | 2020-08-27 | 京东方科技集团股份有限公司 | Panel and manufacturing method and display device |
| CN113745263A (en) * | 2021-08-18 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Display panel, manufacturing method thereof and display device |
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| CN112242413B (en) * | 2020-10-10 | 2022-10-04 | 武汉华星光电技术有限公司 | Lamp panel and display device |
| CN113658518B (en) * | 2021-08-24 | 2023-07-04 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
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| CN109904198B (en) | 2021-11-02 |
| WO2020168989A1 (en) | 2020-08-27 |
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