CN109888095A - 相变化记忆体及其制造方法 - Google Patents
相变化记忆体及其制造方法 Download PDFInfo
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- CN109888095A CN109888095A CN201910193274.XA CN201910193274A CN109888095A CN 109888095 A CN109888095 A CN 109888095A CN 201910193274 A CN201910193274 A CN 201910193274A CN 109888095 A CN109888095 A CN 109888095A
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- layer
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- dielectric layer
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- phase change
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000008859 change Effects 0.000 claims abstract description 142
- 238000000034 method Methods 0.000 claims abstract description 63
- 238000000059 patterning Methods 0.000 claims abstract description 63
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 87
- 229920002120 photoresistant polymer Polymers 0.000 claims description 69
- 239000003989 dielectric material Substances 0.000 claims description 37
- 125000006850 spacer group Chemical group 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 22
- 239000011810 insulating material Substances 0.000 claims description 12
- 238000005240 physical vapour deposition Methods 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000011799 hole material Substances 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910010037 TiAlN Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 208000035126 Facies Diseases 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108091081062 Repeated sequence (DNA) Proteins 0.000 description 1
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 description 1
- CBJZJSBVCUZYMQ-UHFFFAOYSA-N antimony germanium Chemical compound [Ge].[Sb] CBJZJSBVCUZYMQ-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- Semiconductor Memories (AREA)
Abstract
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CN201910193274.XA CN109888095B (zh) | 2019-03-14 | 2019-03-14 | 相变化记忆体及其制造方法 |
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CN109888095A true CN109888095A (zh) | 2019-06-14 |
CN109888095B CN109888095B (zh) | 2024-04-05 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070152205A1 (en) * | 2005-12-29 | 2007-07-05 | Industrial Technology Research Institute | Semiconductor memory device, phase change memory device, and method of fabricating the same |
KR20090010427A (ko) * | 2007-07-23 | 2009-01-30 | 삼성전자주식회사 | 하부전극을 갖는 상변화 기억 소자들 및 그 제조방법들 |
US20100163832A1 (en) * | 2008-12-30 | 2010-07-01 | Stmicroelectronics S.R.I. | Self-aligned nano-cross-point phase change memory |
US20110121250A1 (en) * | 2009-11-26 | 2011-05-26 | Hynix Semicondutor Inc. | High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof |
CN102122700A (zh) * | 2011-01-06 | 2011-07-13 | 上海新储集成电路有限公司 | 一种双轨相变存储器及其制备方法 |
CN102332530A (zh) * | 2010-07-13 | 2012-01-25 | 中国科学院上海微系统与信息技术研究所 | 具有侧壁加热电极与相变材料的存储器单元及制备方法 |
CN103022348A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
CN103296201A (zh) * | 2012-03-02 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器、其底部接触结构及其各自制作方法 |
CN209496898U (zh) * | 2019-03-14 | 2019-10-15 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体 |
-
2019
- 2019-03-14 CN CN201910193274.XA patent/CN109888095B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070152205A1 (en) * | 2005-12-29 | 2007-07-05 | Industrial Technology Research Institute | Semiconductor memory device, phase change memory device, and method of fabricating the same |
KR20090010427A (ko) * | 2007-07-23 | 2009-01-30 | 삼성전자주식회사 | 하부전극을 갖는 상변화 기억 소자들 및 그 제조방법들 |
US20100163832A1 (en) * | 2008-12-30 | 2010-07-01 | Stmicroelectronics S.R.I. | Self-aligned nano-cross-point phase change memory |
US20110121250A1 (en) * | 2009-11-26 | 2011-05-26 | Hynix Semicondutor Inc. | High integration phase change memory device having reduced thickness phase change layer and fabrication method thereof |
CN102332530A (zh) * | 2010-07-13 | 2012-01-25 | 中国科学院上海微系统与信息技术研究所 | 具有侧壁加热电极与相变材料的存储器单元及制备方法 |
CN102122700A (zh) * | 2011-01-06 | 2011-07-13 | 上海新储集成电路有限公司 | 一种双轨相变存储器及其制备方法 |
CN103022348A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器及其形成方法 |
CN103296201A (zh) * | 2012-03-02 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器、其底部接触结构及其各自制作方法 |
CN209496898U (zh) * | 2019-03-14 | 2019-10-15 | 江苏时代全芯存储科技股份有限公司 | 相变化记忆体 |
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CN109888095B (zh) | 2024-04-05 |
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PB01 | Publication | ||
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Address after: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant after: Beijing times full core storage technology Co.,Ltd. Applicant after: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. Address before: 223300 north of Changjiang East Road and west of Zhongchi Road (No. 601 Changjiang East Road), Huaiyin District, Huai'an City, Jiangsu Province Applicant before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. |
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Effective date of registration: 20231113 Address after: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant after: Beijing times full core storage technology Co.,Ltd. Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094 Applicant before: Beijing times full core storage technology Co.,Ltd. Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd. |
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