CN109884754A - A kind of coupled structure and encapsulating structure of laser and silicon optical chip - Google Patents
A kind of coupled structure and encapsulating structure of laser and silicon optical chip Download PDFInfo
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- CN109884754A CN109884754A CN201910330281.XA CN201910330281A CN109884754A CN 109884754 A CN109884754 A CN 109884754A CN 201910330281 A CN201910330281 A CN 201910330281A CN 109884754 A CN109884754 A CN 109884754A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 118
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 239000010703 silicon Substances 0.000 title claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 98
- 239000013307 optical fiber Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims 1
- 238000010168 coupling process Methods 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 230000008878 coupling Effects 0.000 abstract description 14
- 239000000306 component Substances 0.000 abstract description 2
- 239000000835 fiber Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
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- 101100457838 Caenorhabditis elegans mod-1 gene Proteins 0.000 description 3
- 101150110972 ME1 gene Proteins 0.000 description 3
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- 238000004806 packaging method and process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- 230000009466 transformation Effects 0.000 description 1
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Abstract
The invention discloses the coupled structures of a kind of laser and silicon optical chip, including laser, collimation lens, isolator, coupled lens, optical fiber and the silicon optical chip set gradually, collimation lens and coupled lens common optical axis, optical fiber is connected with silicon optical chip, incident isolator after the collimated collimated of laser emitting light, coupled light lens converge to optical fiber later, enter silicon optical chip by fiber coupling.The invention also discloses the encapsulating structures of a kind of laser and silicon optical chip, including sequentially connected light emission component, optical fiber and silicon optical chip, light emission component includes laser, collimation lens, isolator and coupled lens, light emission component is encapsulated using TOSA (light emitting secondary module) technique, and wherein laser is encapsulated using TO (transistor outline) technique.
Description
Technical field
The present invention relates to luminous fields of communication technology, are more precisely related to the coupling knot of a kind of laser and silicon optical chip
Structure and encapsulating structure.
Background technique
With the continuous development of optical communication technique, for photoelectric device towards smaller volume, integrated level is higher, the lower side of cost
To development.IC chip is made generally on silicon wafer of complementary metal oxide semiconductor integrated technique, has been had
Very mature manufacture craft, waveguide fabrication in silicon-based substrate side, is used for transmission optical path by present some manufacturers, in this way integrated
It is silicon optical chip on same silicon base chip that circuit chip function and optical chip function, which are integrated in,.Silicon optical chip is both able to achieve electricity
Signal processing function such as signal amplifier, digital signal processor etc., and optical path can be transmitted, it realizes the filtering of optical signal, divide
The functions such as beam, modulation, the height optoelectronic integration of silicon optical chip reduce the volume of photoelectric device, can reduce power consumption and production
Cost etc. can more be competent at urgent need of the data center to the high port density of optical communications module and low cost, have good
Development prospect.But, there are still some technical problems in practical applications for silicon optical chip, one of them is silicon radiant.Due to
Silicon is a kind of indirect bandgap material, and luminous efficiency is far below three-five Semiconductor Optoeletronic Materials, is not suitable for production
Light source.
In order to realize silicon radiant, there are three types of the schemes that industry uses: the first, Intel Company selects in silicon optical chip
Then upper epitaxial growth three-five Semiconductor Optoeletronic Materials carries out laser processing in three-five Semiconductor Optoeletronic Materials again
Technique makes light source；Second, three-five DFB chip, lens, isolator are fabricated to a light source by the selection of Luxtera company
Component, then this component is bonded on silicon optical chip with glue；The third, Hisilicon company, Huawei selects laser
Chip waveguide is inverted in above silicon waveguide, carries out evanescent wave coupling, by going optically coupling to silicon optical chip the inside for chip of laser.
In above-mentioned three kinds of schemes, the complex process of scheme one, chip reliability is not high, silicon materials and three-five Semiconductor Optoeletronic Materials
Itself is there are lattice mismatch, the epitaxial growth three-five Semiconductor Optoeletronic Materials on silicon materials, and growth course kind will appear very
Multi-lattice defect generates bigger stress, influences the reliability of chip；The processing technology of light source assembly in scheme two, sealing
Process is more complicated, and process costs are relatively high；Chip of laser waveguide is inverted in above silicon waveguide in scheme three, is suddenly died
Wave coupling, needs the equipment that is coupled and aligned of superhigh precision, the requirement for equipment and technique is all very high.To sum up, the prior art is real
The scheme of existing silicon radiant has certain defect, and there are biggish rooms for improvement.
Summary of the invention
In view of this, the main purpose of the present invention is to provide the coupled structures of a kind of laser and silicon optical chip, including
Laser, collimation lens, isolator, coupled lens, optical fiber and the silicon optical chip set gradually, the collimation lens and described
Coupled lens common optical axis, the optical fiber are connected with the silicon optical chip, and the laser emitting light is collimated through the collimation lens
The incident isolator afterwards, the coupled lens incident later converge to the optical fiber, enter the silicon by the fiber coupling
Optical chip.
It is another object of the present invention to provide the encapsulating structures of a kind of laser and silicon optical chip, including are sequentially connected
Light emission component, optical fiber and silicon optical chip, the light emission component includes laser, collimation lens, isolator and coupling
Lens, the light emission component are encapsulated using TOSA (light emitting secondary module) technique, wherein the laser uses TO (transistor
Shape) technique encapsulation.
In order to achieve the above object, the present invention provides the coupled structure of a kind of laser and silicon optical chip, including successively sets
A laser, an isolator, a coupled lens, an optical fiber and the silicon optical chip set, the optical fiber and the silicon optical chip
Connection, the laser emitting light beam, the incident isolator of the light beam, the incident coupling after isolator outgoing
Lens, the incident silicon optical chip after the coupled lens converge to the optical fiber.
Preferably, the coupled structure of the laser and silicon optical chip includes collimating lens, the collimation lens setting
Between the laser and the isolator, the collimation lens and the coupled lens common optical axis, the laser emitting
Light beam, the incident collimation lens of the light beam, the incident isolator after collimation lens collimation, from the isolator
The incident coupled lens after outgoing, the incident silicon optical chip after the coupled lens converge to the optical fiber.
Preferably, the optical fiber is polarization maintaining optical fibre.
The present invention also provides the encapsulating structures of a kind of laser and silicon optical chip, including a sequentially connected at least light emitting
Component, at least an optical fiber and a silicon optical chip, the light emission component are connect by the optical fiber with the silicon optical chip, institute
Stating light emission component includes a laser, collimating lens, an isolator and a coupled lens, and the light emission component uses
The encapsulation of TOSA technique, the laser are encapsulated using TO technique.
Preferably, the laser is packaged using form a kind of in TO56, TO38, TO33.
Preferably, the light emission component and the laser are packaged using metalwork.
Preferably, the light emission component passes through the optical fiber and the pluggable connection of silicon optical chip.
Preferably, described optical fiber one end is connect with the silicon optical chip, and the other end has a connection-peg, and the optical fiber passes through
The connection-peg is connect with the light emission component.
Compared with prior art, the coupled structure of a kind of laser and silicon optical chip disclosed by the invention and encapsulating structure
Advantage is: the coupled structure of the laser and silicon optical chip can be real without using the equipment that is coupled and aligned of superhigh precision
Existing, coupling efficiency is higher, and cost is relatively low；It is coupled by optical fiber, convenient for the flexible topology of laser and silicon optical chip, heat dissipation
Performance is more preferable, and applicability is stronger, while convenient for plug maintenance；The encapsulating structure of the laser and silicon optical chip, using TO work
Skill packaged light source, air-tight packaging have very strong productibility, very high reliability, lower cost；The laser with
The encapsulating structure of silicon optical chip is packaged using metalwork, and heat dissipation performance is more preferable.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
It is as shown in Figure 1 the structural schematic diagram of the coupled structure of a kind of laser of the present invention and silicon optical chip.
The encapsulating structure of a kind of laser of the present invention and silicon optical chip is illustrated in figure 2 applied to the knot in DR4 optical module
Structure block diagram.
The encapsulating structure of a kind of laser of the present invention and silicon optical chip is illustrated in figure 3 applied to the knot in DR4 optical module
Structure schematic diagram.
The encapsulating structure of a kind of laser of the present invention and silicon optical chip is illustrated in figure 4 applied to the knot in FR4 optical module
Structure block diagram.
The encapsulating structure of a kind of laser of the present invention and silicon optical chip is illustrated in figure 5 applied to the knot in FR4 optical module
Structure schematic diagram.
Specific embodiment
As shown in Figure 1, the coupled structure of a kind of laser of the present invention and silicon optical chip includes the laser set gradually
1, collimating lens 21, an isolator 22, a coupled lens 23, an optical fiber 30 and a silicon optical chip 40, the collimation lens
21 and 23 common optical axis of the coupled lens, the optical fiber 30 and the silicon optical chip 40 connection, 1 outgoing beam of laser,
Light beam and 21 common optical axis of collimation lens, the incident collimation lens 21 of light beam, the light after the collimation lens 21 collimation
The incident isolator 22 of beam, the incident coupled lens 23, converge through the coupled lens 23 after the isolator 22 outgoing
Gather to the optical fiber 30.The collimation lens 21 and the coupled lens 23 form two-lens structure, using this double lens light
After learning design, the coupling efficiency of laser can be effectively improved.The silicon optical chip 40, which has, receives optical waveguide, if the receipts
Optical waveguide, which was done, expands processing, and the optical fiber 30 can be with 40 direct-coupling of silicon optical chip；If the silicon optical chip 40
Receipts optical waveguide mode field diameter it is smaller, then need to increase coupled lens on the silicon optical chip 40 and do hot spot transformation, into
One step converging beam.Preferably, the optical fiber 30 can select polarization maintaining optical fibre, improve coupling performance.
Since the laser 1 is coupled by the optical fiber 30 with the silicon optical chip 40, without using high-precision
The equipment that is coupled and aligned, coupling efficiency is higher, and cost is relatively low.And since optical fiber can be bent, it can be arranged more flexiblely
The relative position of the laser 1 and the silicon optical chip 40, applicability are stronger.Meanwhile described stating laser 1 and the silicon light
Chip 40 is separately positioned, is conducive to radiate.
The invention also discloses the encapsulating structures of a kind of laser and silicon optical chip, including sequentially connected light emitting group
Part 20, the optical fiber 30 and the silicon optical chip 40, the light emission component 20 are saturating including the laser 1, the collimation
Mirror 21, the isolator 22 and the coupled lens 23, the light emission component 20 use TOSA (light emitting secondary module) work
Skill encapsulation.Wherein, the laser 1 is encapsulated using TO (transistor outline) technique.The laser 1 is encapsulated using TO technique,
Air-tight packaging, productibility is strong, high reliablity, at low cost, convenient for the popularization and application of silicon photon technology.The light emission component
20 and the laser 1 encapsulation use metalwork, improve heat dissipation performance.The laser 1 can be used in TO56, TO38, TO33
A kind of form is packaged.Powerful continuous wave light source is capable of providing using the laser that TO technique encapsulates, convenient for compensation silicon
The higher optical path loss of optical chip.
Also settable backlight detection chip (MPD) in the light emission component 20, the backlight detection chip swash with described
Light device 1 is electrically connected, for monitoring the luminous power of the laser 1, in order to stabilize the luminescent properties of the laser 1.
Since the optical fiber 30 is flexible, and the length of the optical fiber 30 can self-setting, 20 He of light emission component
The distance between described silicon optical chip 40 and relative position can be adjusted as needed, and improve encapsulating structure in optical module
Applicability.The adaptation that the encapsulating structure of the laser and silicon optical chip requires different volumes limitation, cooling requirements, arrangement
Property is stronger.Simultaneously as the light emission component 20 and the silicon optical chip 40 are separately positioned, be conducive to improve the light emitting
The heat dissipation performance of component 20 and the silicon optical chip 40.
The light emission component 20 has by the optical fiber 30 and the pluggable connection of the silicon optical chip 40 referring to Fig. 3
And Fig. 5, described 30 one end of optical fiber are connect with the silicon optical chip 40, the other end has a connection-peg 301, and the optical fiber 30 passes through
The connection-peg 301 and the pluggable connection of the light emission component 20.The light emission component 20 is set and passes through the optical fiber
30 with the pluggable connection of the silicon optical chip 40, and the combination for facilitating the light emission component 20 and the silicon optical chip 40 is pacified
Dress, it is easy to operate, it is more efficient, while trouble hunting is facilitated, it is convenient for safeguarding.
As shown in Figures 2 and 3, it is applied to showing in DR4 optical module for the encapsulating structure of the laser and silicon optical chip
It is intended to, two couplings of light emission component 20 access the silicon optical chip 40, and two light emission components 20 issue phase
The light of co-wavelength.The optical splitter of integrally disposed two one-to-two and four modulators in the silicon optical chip 40 (MOD-1,
MOD-2, MOD-3, MOD-4), each optical splitter connects two modulators, respectively an optical splitter
MOD-1 and MOD-2 is connected, another described optical splitter connects MOD-3 and MOD-4.Two light emission components 20 are distinguished
Access two optical splitters.Four modulators pass through one MPO connector 50 of intelligent acess.Wherein, two light
Emitting module 20 is connect by two connection-pegs 301 with two optical fiber 30 respectively, and two light emission components 20 pass through
The connection-peg 301 and the pluggable connection of the silicon optical chip 40.
As shown in Figure 4 and Figure 5, it is applied to showing in FR4 optical module for the encapsulating structure of the laser and silicon optical chip
What intention, four coupling of light emission components 20 intervention silicon optical chips 40, and four light emission components 20 exported
Optical wavelength is all different.In the silicon optical chip 40 integrally disposed four modulators (MOD-1, MOD-2, MOD-3, MOD-4) with
And an optical multiplexer (MUX), four modulators access the optical multiplexer.Four light emitting groups
Part 20 is respectively connected to four modulators.The optical multiplexer passes through one LC connector 60 of intelligent acess.Described in four
Light emission component 20 is separately connected four optical fiber 30, and four optical fiber 30 are connect with four connection-pegs 301, and four institutes
It states light emission component 20 and passes through the connection-peg 301 and the pluggable connection of the silicon optical chip 40.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (8)
1. the coupled structure of a kind of laser and silicon optical chip, which is characterized in that including set gradually a laser, one isolation
Device, a coupled lens, an optical fiber and a silicon optical chip, the optical fiber are connect with the silicon optical chip, the laser emitting
Light beam, the incident isolator of the light beam, the incident coupled lens after isolator outgoing, through the coupled lens
Converge to the incident silicon optical chip after the optical fiber.
2. the coupled structure of laser as described in claim 1 and silicon optical chip, which is characterized in that including collimating lens,
The collimation lens is arranged between the laser and the isolator, and the collimation lens and the coupled lens are total to light
Axis, the laser emitting light beam, the incident collimation lens of the light beam, after collimation lens collimation it is incident it is described every
From device, the incident coupled lens after isolator outgoing, the incident institute after the coupled lens converge to the optical fiber
State silicon optical chip.
3. the coupled structure of laser as described in claim 1 and silicon optical chip, which is characterized in that the optical fiber is polarization-maintaining light
It is fine.
4. the encapsulating structure of a kind of laser and silicon optical chip, which is characterized in that including a sequentially connected at least light emitting group
Part, at least an optical fiber and a silicon optical chip, the light emission component is connect by the optical fiber with the silicon optical chip, described
Light emission component includes a laser, collimating lens, an isolator and a coupled lens, and the light emission component uses
The encapsulation of TOSA technique, the laser are encapsulated using TO technique.
5. the encapsulating structure of laser as claimed in claim 4 and silicon optical chip, which is characterized in that the laser uses
A kind of form is packaged in TO56, TO38, TO33.
6. the encapsulating structure of laser as claimed in claim 4 and silicon optical chip, which is characterized in that the light emission component and
The laser is packaged using metalwork.
7. the encapsulating structure of laser as claimed in claim 4 and silicon optical chip, which is characterized in that the light emission component is logical
Cross the optical fiber and the pluggable connection of silicon optical chip.
8. the encapsulating structure of laser as claimed in claim 7 and silicon optical chip, which is characterized in that described optical fiber one end and institute
The connection of silicon optical chip is stated, the other end has a connection-peg, and the optical fiber is connect by the connection-peg with the light emission component.
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| CN201910330281.XA CN109884754A (en) | 2019-04-23 | 2019-04-23 | A kind of coupled structure and encapsulating structure of laser and silicon optical chip |
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Cited By (13)
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| CN111308619A (en) * | 2020-01-20 | 2020-06-19 | 武汉联特科技有限公司 | Light emitting device and coupling method thereof |
| CN111370982A (en) * | 2020-03-16 | 2020-07-03 | 宁波大学 | Chalcogenide optical fiber coupler for generating mid-infrared super-continuum spectrum |
| CN112305689A (en) * | 2020-11-02 | 2021-02-02 | 上海交大平湖智能光电研究院 | Laser and silicon optical chip coupling structure based on super lens |
| CN112859259A (en) * | 2021-03-09 | 2021-05-28 | 亨通洛克利科技有限公司 | Photoelectric cooperative packaging silicon light engine |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
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| CN113467015A (en) * | 2021-08-03 | 2021-10-01 | 新疆师范大学 | Center calibrating device of laser coupling platform |
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| CN114296191A (en) * | 2021-12-31 | 2022-04-08 | 中天宽带技术有限公司 | Silicon optical component and packaging method thereof |
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| CN114527541A (en) * | 2021-01-29 | 2022-05-24 | 阿里巴巴集团控股有限公司 | Flexible switch solution based on co-packaged optics |
| CN112859259A (en) * | 2021-03-09 | 2021-05-28 | 亨通洛克利科技有限公司 | Photoelectric cooperative packaging silicon light engine |
| CN113467015A (en) * | 2021-08-03 | 2021-10-01 | 新疆师范大学 | Center calibrating device of laser coupling platform |
| CN113467015B (en) * | 2021-08-03 | 2023-03-21 | 新疆师范大学 | Center calibrating device of laser coupling platform |
| CN113917614A (en) * | 2021-09-15 | 2022-01-11 | 武汉光迅科技股份有限公司 | Optical module |
| CN113805270A (en) * | 2021-09-17 | 2021-12-17 | 希烽光电科技(南京)有限公司 | High-integration silicon optical chip |
| CN113805270B (en) * | 2021-09-17 | 2024-04-16 | 希烽光电科技(南京)有限公司 | High-integration silicon optical chip |
| CN114296191A (en) * | 2021-12-31 | 2022-04-08 | 中天宽带技术有限公司 | Silicon optical component and packaging method thereof |
| CN114296191B (en) * | 2021-12-31 | 2023-11-17 | 中天宽带技术有限公司 | Silicon optical component and packaging method thereof |
| CN115437083A (en) * | 2022-09-28 | 2022-12-06 | 四川华岭光子科技有限公司 | Optical path coupling assembly and optical module with same |
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