CN113805270A - High-integration silicon optical chip - Google Patents
High-integration silicon optical chip Download PDFInfo
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- CN113805270A CN113805270A CN202111091354.8A CN202111091354A CN113805270A CN 113805270 A CN113805270 A CN 113805270A CN 202111091354 A CN202111091354 A CN 202111091354A CN 113805270 A CN113805270 A CN 113805270A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 372
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 208
- 239000010703 silicon Substances 0.000 title claims abstract description 208
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 203
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 230000010354 integration Effects 0.000 claims abstract description 18
- 230000002238 attenuated effect Effects 0.000 claims description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
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- 230000003321 amplification Effects 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12123—Diode
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/1215—Splitter
Abstract
The application provides a silicon optical chip of high integration degree, through the cooperation of branching unit and avalanche photodiode receiver, can effectively reduce the quantity of laser instrument. Specifically, a small number of direct current lasers emitted by the lasers can be split into more optical paths through the splitter, so that the number of the optical paths obtained after splitting meets the number of the optical paths required by the silicon optical chip, meanwhile, even if the power value of the optical paths obtained after splitting through the splitter is low, the power value of modulated optical signals obtained by the optical paths through the silicon optical modulator is low, the modulated optical signals with the low power values can be accurately identified and captured by adopting a photodiode receiver with high gain, and the splitter and the photodiode receiver can be integrated on a silicon substrate, so that the integration level of the silicon optical chip can be effectively improved.
Description
Technical Field
The application relates to the technical field of silicon optical chips, in particular to a silicon optical chip with high integration level.
Background
A chip (microchip) is a product obtained by printing an Integrated Circuit (IC) on a semiconductor substrate by using a photolithography technique, wherein the IC includes a certain number of commonly used electronic components, and the commonly used electronic components are Integrated together by a semiconductor process to form a Circuit having a specific function, so that various functions are realized, and thus, the chip can realize the corresponding functions through the IC. The chip made of the integrated circuit described above uses electrons as an information carrier, and therefore, the chip is affected by problems such as power consumption, delay, and the like in a signal transmission mode, thereby degrading the performance of the chip.
In order to improve the performance of the chip, the integrated circuit may be replaced by an integrated optical circuit to obtain a silicon optical chip, where the integrated optical circuit includes a silicon-based substrate and a certain number of optoelectronic devices, such as a laser, a silicon optical modulator, a photodetector, etc., and these optoelectronic devices may be integrated on the silicon-based substrate by a standard semiconductor process to form an optical electrical path with a specific function, that is, photons and electrons are simultaneously used as information carriers, so as to improve the information transmission speed of the chip and reduce power consumption.
Nowadays, devices tend to be miniaturized more and more, and if silicon optical chips are required to be applied to these miniaturized devices, the integration level of optoelectronic devices in the silicon optical chips needs to be further improved to reduce the volume of the silicon optical chips. Since the silicon-based substrate is an indirect bandgap material and is difficult to emit light, if a laser is directly integrated on the silicon-based substrate, the laser is difficult to form an optical path on the silicon-based substrate, and therefore, as shown in fig. 1, the laser 1 is externally disposed on the silicon-based substrate 2, that is, disposed on the semiconductor substrate 3, and a corresponding laser input end 4 is disposed on the silicon-based substrate 2, so that laser emitted by the laser 1 forms an optical path on the silicon-based substrate 2 through the laser input end 4, and finally enters the silicon optical modulator 5, and then the modulated optical signal is output to the silicon optical chip at the opposite end through the modulated optical signal output end 6 by the silicon optical modulator 5, and the modulated optical signal output end 7 receives the modulated optical signal output by the silicon optical chip at the opposite end, and information carried in the modulated optical signal is collected by the photodiode receiver 8. However, because the laser 1 cannot be integrated on the silicon substrate 2, the integration level of the silicon optical chip is low, and because the silicon optical chip usually needs to be provided with a plurality of optical paths, and each optical path is generated by a corresponding laser 1, the number of the lasers 1 is correspondingly large, and the lasers 1 are difficult to be integrated together, the integration level between the lasers 1 is low, the size is large, and the integration level of the silicon optical chip is further reduced.
Disclosure of Invention
The application provides a silicon optical chip with high integration level, so as to improve the integration level of the silicon optical chip by reducing the number of lasers.
The application provides a high-integration silicon optical chip, which comprises a silicon-based substrate, a laser input end, a shunt, a silicon optical modulator, a modulated optical signal output end, a modulated optical signal receiving end and a photodiode receiver;
the laser input end, the splitter, the silicon optical modulator, the modulated optical signal output end, the modulated optical signal receiving end and the photodiode receiver are integrated on the silicon-based substrate;
laser emitted by at least one laser sequentially passes through the laser input end and the splitter, the laser enters the silicon optical modulator, the silicon optical modulator outputs a modulated optical signal through the modulated optical signal output end to transmit the modulated optical signal to a modulated signal receiving end of an opposite-end silicon optical chip, and the modulated optical signal receiving end receives the modulated optical signal output by the modulated optical signal output end of the opposite-end silicon optical chip and enters the photodiode receiver through the modulated optical signal receiving end;
the photodiode receiver employs a silicon germanium avalanche photodiode receiver.
In one implementation, the splitting number M of the splitter is more than or equal to 4.
In one implementation, the splitting number M of the splitter is more than or equal to 8.
In one implementation, the silicon-based substrate includes a first silicon-based substrate and a second silicon-based substrate, and the first silicon-based substrate and the second silicon-based substrate are an integrated structure;
the laser input end, the splitter, the silicon optical modulator and the modulated optical signal output end are integrated on the first silicon-based substrate, the modulated optical signal receiving end and the photodiode receiver are integrated on the second silicon-based substrate, and the distance between the silicon optical modulator and the photodiode receiver meets a preset distance threshold value.
In one implementation, the silicon-based substrate includes a first silicon-based substrate and a second silicon-based substrate, and both the first silicon-based substrate and the second silicon-based substrate are independent components;
the laser input end, the splitter, the silicon optical modulator and the modulated optical signal output end are integrated on the first silicon-based substrate, and the modulated optical signal receiving end and the photodiode receiver are integrated on the second silicon-based substrate.
In an implementation manner, the laser includes a first laser, the optical path includes a first optical path, the direct current laser emitted by the first laser sequentially passes through the laser input end and the splitter to obtain the first optical path, and the number of the first optical paths is greater than or equal to the number of the preset optical paths;
the photodiode receiver comprises a first photodiode receiver, wherein a loss value of the splitter is in accordance with a gain range of the first photodiode receiver, wherein the first photodiode receiver employs an avalanche photodiode receiver.
In an implementation manner, the laser includes a first laser and a second laser, and the optical path includes a first optical path and a second optical path, where laser emitted by the first laser sequentially passes through the laser input end and the splitter to obtain the first optical path, laser emitted by the second laser passes through the laser input end to obtain the second optical path, and the total number of the first optical path and the second optical path is equal to the preset number of optical paths;
the photodiode receiver comprises a first photodiode receiver and a second photodiode receiver, the first photodiode receiver is used for receiving the modulated optical signal corresponding to the first optical path, the second photodiode receiver is used for receiving the modulated optical signal corresponding to the second optical path, the loss value of the splitter conforms to the gain range of the first photodiode receiver, the gain value of the first photodiode receiver is larger than that of the second photodiode receiver, the first photodiode receiver adopts an avalanche photodiode receiver, and the second photodiode receiver adopts a PIN photodiode receiver.
In an implementation manner, the laser includes a first laser and a second laser, and the optical path includes a first optical path and a second optical path, where laser emitted by the first laser sequentially passes through the laser input end and the splitter to obtain the first optical path, laser emitted by the second laser passes through the laser input end to obtain the second optical path, and the total number of the first optical path and the second optical path is equal to the preset number of optical paths;
the silicon optical chip further comprises an attenuator, the attenuator is integrated on the silicon-based substrate, and the optical signal corresponding to the second optical path is attenuated by the attenuator to obtain an attenuated optical signal;
the photodiode receiver comprises a first photodiode receiver, and the first photodiode receiver is configured to receive a modulated optical signal corresponding to the first optical path and an attenuated modulated optical signal corresponding to the second optical path, where a loss value of the splitter corresponds to a gain range of the first photodiode receiver, and a power value of the attenuated optical signal corresponds to a receiving power value range of the first photodiode receiver, and the first photodiode receiver employs an avalanche photodiode receiver.
In one implementation, the laser is directly coupled to the laser input.
According to the technical scheme, the silicon optical chip provided by the application can effectively reduce the number of lasers through the matching of the branching unit and the photodiode receiver. Specifically, a small number of direct current lasers emitted by the lasers can be split into more optical paths through the splitter, so that the number of the optical paths obtained after splitting meets the number of the optical paths required by the silicon optical chip. The silicon optical chip at the opposite end also adopts the same structure, the power value of the optical paths obtained by splitting the silicon optical chip at the opposite end through the splitter is lower, the power value of the modulated optical signals obtained by the optical paths through the silicon optical modulator is lower, the silicon optical chip at the local end can accurately identify and capture the modulated optical signals with lower power values by adopting an avalanche photodiode receiver with higher gain, and the splitter and the photodiode receiver at the local end can be integrated on a silicon substrate, so that the integration level of the silicon optical chip can be effectively improved.
Drawings
In order to more clearly explain the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a low-integration silicon optical chip provided in the present application;
FIG. 2 is a schematic structural diagram of a highly integrated silicon optical chip provided in the present application;
fig. 3 is a schematic structural diagram of an integrated chip provided in the present application;
fig. 4 is a schematic structural diagram of a laser input end provided in the present application;
fig. 5 is a schematic structural diagram of a silicon optical chip provided in the present application, in which 16 optical paths are formed by two lasers in combination with two three-level-one-two splitters;
fig. 6 is a schematic structural diagram of a silicon optical chip in which a laser is combined with a four-level-one-shunt to form 15 optical paths according to the present application;
FIG. 7 is a schematic structural diagram of a silicon optical chip formed by a first laser, a three-level-one-division-two-way splitter and a second laser to form 9 optical paths according to the present application;
FIG. 8 is a schematic structural diagram illustrating the arrangement positions of attenuators in a silicon photonic chip according to the present application;
FIG. 9 is a schematic structural diagram of a silicon optical chip with a second photodiode receiver according to the present application;
fig. 10 is a schematic structural diagram of a silicon optical chip using a split silicon-based substrate according to the present application.
Illustration of the drawings:
1-laser, 2-silicon-based substrate, 3-semiconductor substrate, 4-laser input, 5-silicon optical modulator, 6-modulated optical signal output, 7-modulated optical signal receive, 8-photodiode receiver, 100-integrated chip, 01-silicon optical chip, 02-semiconductor substrate, 03-trace, 04-other chip, 10-silicon-based substrate, 101-first silicon-based substrate, 102-second silicon-based substrate, 20-laser input, 201-optical path, 30-splitter, 40-silicon optical modulator, 50-modulated optical signal output, 60-modulated optical signal receive, 70-photodiode receiver, 701-first photodiode receiver, 702-second photodiode receiver, 80-laser, 800-direct current laser, 801-first laser, 802-second laser, 90-attenuator.
Detailed Description
Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following examples do not represent all embodiments consistent with the present application. But merely as exemplifications of systems and methods consistent with certain aspects of the application, as recited in the claims.
It should be noted that the brief descriptions of the terms in the present application are only for the convenience of understanding the embodiments described below, and are not intended to limit the embodiments of the present application. These terms should be understood in their ordinary and customary meaning unless otherwise indicated.
The terms "first," "second," "third," and the like in the description and claims of this application and in the above-described drawings are used for distinguishing between similar or analogous objects or entities and not necessarily for describing a particular sequential or chronological order, unless otherwise indicated. It is to be understood that the terms so used are interchangeable under appropriate circumstances.
The terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a product or apparatus that comprises a list of elements is not necessarily limited to all elements expressly listed, but may include other elements not expressly listed or inherent to such product or apparatus.
The term "module" refers to any known or later developed hardware, software, firmware, artificial intelligence, fuzzy logic, or combination of hardware and/or software code that is capable of performing the functionality associated with that element.
In this embodiment, transmission of optical signals occurs between the local-end silicon optical chip and the opposite-end silicon optical chip, where the local-end silicon optical chip and the opposite-end silicon optical chip both adopt the same structure, and the local-end silicon optical chip (hereinafter, both are simply referred to as a silicon optical chip without ambiguity) is taken as an example for explanation. Fig. 2 is a schematic structural diagram of a silicon optical chip according to an embodiment of the present disclosure, and as shown in fig. 2, the silicon optical chip 01 according to the present disclosure includes a silicon-based substrate 10, a laser input end 20, a splitter 30, a silicon optical modulator 40, a modulated optical signal output end 50, a modulated optical signal receiving end 60, and a photodiode receiver 70.
Generally, as shown in fig. 3, a silicon optical chip 01 is integrated on a semiconductor substrate 02 and electrically connected to the semiconductor substrate 02, a trace 03 is arranged on the semiconductor substrate 02, meanwhile, other chips 04 are arranged on the semiconductor substrate 02, and the silicon optical chip 01 is electrically connected to the other chips 04 through the corresponding trace 03, so as to realize information transmission between the silicon optical chip 01 and the other chips 04, so that the silicon optical chip 01 and the other chips 04 integrated on the semiconductor substrate 02 form an integrated chip 100, and the integrated chip 100 can be assembled into corresponding equipment as a controller, for example, a mobile phone, a tablet computer, an intelligent wearable device, and the like, so as to control corresponding hardware in the equipment. The following describes the workflow of each component on the silicon optical chip, and the workflow of each component on the end silicon optical chip is the same.
The laser 80 as a light source device of the silicon optical chip 01 emits laser light which is a carrier for transmitting information based on the material properties of the silicon-based substrate 10 (indirect bandgap material, difficult to emit light), and therefore, it is difficult to integrate the laser 80 directly on the silicon-based substrate 10, that is, it is difficult to directly conduct photons through the silicon-based substrate 10, that is, it is difficult to directly form an optical path on the silicon-based substrate 10. Therefore, in order to obtain a high-quality optical path and ensure the quality of subsequent information transmission, the laser 80 is externally arranged on the silicon-based substrate 10, that is, the laser 80 is arranged on the semiconductor substrate 02, and the laser input end 20 is arranged on the silicon-based substrate 10, so that the laser emitted by the laser 80 forms an optical path on the silicon-based substrate 10 through the laser input end 20. As shown in fig. 4, an optical path 201 is disposed in the laser input end 20, and the dc laser 801 emitted by the laser 80 enters the optical path 201 in the direction indicated by the arrow in fig. 4, and the optical path 201 can introduce the internal dc laser 800 into the next optoelectronic device, for example, the silicon optical modulator 40 shown in fig. 4.
According to the business requirement, the number of the required laser light paths, that is, the number of the preset light paths, is preset when the silicon optical chip 01 is designed, generally, only one light path can be correspondingly formed by the direct current laser emitted by each laser 80, and therefore, in order to meet the preset number of the light paths, the lasers 80 with the same number as the preset number of the light paths need to be arranged. Generally, the larger the number of preset optical paths, the more carriers used for transmitting information, the more traffic signals can be carried to transmit more information, and for transmitting the same amount of traffic signals, the larger the number of preset optical paths, the faster the information transmission speed. The larger the number of the preset optical paths, the more the lasers 80 are, and the more the lasers 80 are difficult to integrate, so the lasers 80 with large number and difficult integration form a larger volume, and the integration level of the silicon optical chip 01 is lower.
In order to improve the integration of the silicon optical chip 01, the number of the lasers 80 may be reduced, as shown in fig. 2, a splitter 30 is integrated on the silicon substrate 10 to split the laser light emitted from the lasers 80 into multiple laser beams through the splitter 30, that is, multiple optical paths are formed, so as to ensure the number of the optical paths on the basis of reducing the number of the lasers 80. As shown in fig. 2, a four-stage one-to-two splitter is integrated on the silicon-based substrate 10, the dc laser emitted by the laser 80 enters the four-stage one-to-two splitter through the laser input end 20, and the dc laser is split into 16 optical paths by the four-stage one-to-two splitter, so that the number of 16 lasers that originally directly use the emitted dc laser as an optical path is reduced to 1 laser. It can be seen that the number of lasers 80 can be effectively reduced by the splitter 30.
In some embodiments, the splitter 30 may adopt N stages of splitters, the number of stages of the splitter 30 may be set according to the number of preset optical paths, and the splitting number of each stage of the splitter 30 may also be set according to needs (for convenience of description, the splitting number of each stage is 2, that is, one splitter is taken as an example, and the description is made). The laser 80 may also be configured as a single laser 80 or as multiple lasers 80 as desired. For example, if the number of the preset optical paths is 16, a laser 80 may be used together with a four-stage-one-shunt (N ═ 4), as shown in fig. 2; as shown in fig. 5, two lasers 80 may be used together with two three-stage one-two splitters (N is 3), and the laser emitted by each laser 80 is split into 8 optical paths by the corresponding three-stage one-two splitter, so that the two lasers emitted by the two lasers 80 can be split into 16 optical paths by the two three-stage one-two splitters.
In some embodiments, if the number of preset optical paths is set to be odd, the optical paths may still be obtained by splitting the laser light emitted by each laser 80 through an N-level splitter into optical paths. For example, the number of the preset optical paths is 15, and as shown in fig. 6, a laser 80 is used in combination with a four-stage one-half splitter, at this time, the laser 80 can obtain 16 optical paths through the four-stage one-half splitter, and the number of the optical paths obtained by splitting is greater than the number of the preset optical paths, so that the design requirement of the silicon optical chip 01 on the number of the optical paths can be met. At this time, the silicon optical modulator 40 may arbitrarily select 15 optical paths from the 16 optical paths to load the service signal, as shown in fig. 6, the modulated optical signal output end 50 also has 15 optical path channels to transmit the 15 optical paths modulated by the silicon optical modulator 40.
In some embodiments, if the number of preset optical paths is set to be odd, a light path may also be obtained by splitting a part of laser light emitted by the laser 80 through an N-level splitter, and obtaining the light path by using the part of laser light 80 as the light path, in this embodiment, a part of the laser 80 that needs to be split through the splitter to obtain the light path may be referred to as a first laser 801, and a part of the laser 80 that directly uses the emitted laser light as the light path may be referred to as a second laser 802. For example, the number of the preset optical paths is 9, and as shown in fig. 7, one first laser 801 is used in combination with one third-level splitter and one second laser 802, so that laser emitted by the first laser 801 passes through the third-level splitter and can be split into 8 first optical paths, laser emitted by the second laser 802 is 1 second optical path, and the total number of the first optical paths and the second optical paths satisfies the number of the preset optical paths.
The optical path split by the splitter 30 enters the silicon optical modulator 40, and the silicon optical modulator 40 loads the service signal on the optical signal to obtain a modulated optical signal, which is output by the modulated optical signal output terminal 50.
Correspondingly, the opposite-end silicon optical chip also obtains the modulated optical signal by adopting the same process as the process, and the modulated optical signal is output by the modulated optical signal output end on the opposite-end silicon optical chip. Through the above process, the laser is split by the splitter 30, which may generate a certain power consumption, or it may be said that there is corresponding power consumption in the splitter 30, and the power value of each optical path obtained after splitting is lower than the power value of the original dc laser due to the power consumption of the splitter 30, and because the power value of the optical path is lower, the power value of the modulated optical signal obtained by the optical paths with lower power values through the silicon optical modulator 40 is also correspondingly lower, and the optical signal modulated by the opposite-end silicon optical chip is difficult to be identified and captured by the photodiode receiver 70 of the local-end silicon optical chip, therefore, in order to ensure the receiving quality of the optical signal by the photodiode receiver 70, it is ensured that the photodiode receiver 70 can receive all the optical paths, so as to ensure the validity and integrity of information transmission, and it is required that the power consumption of the optical path through the splitter 30 conforms to the gain range of the photodiode receiver 70, that is, the gain of the photodiode receiver 70 may be such that it receives the optical path with a lower power value obtained by splitting through the splitter 30. In the present embodiment, the photodiode receiver 70 of the optical path whose gain range satisfies the lower power value described above may be referred to as a first photodiode receiver. For example, the photodiode receivers 70 in fig. 2, 5, and 6 are all first photodiode receivers, and the sensitivity of capturing the first optical path can be improved by the gain of the first photodiode receivers. In some embodiments, the first photodiode receiver may be an Avalanche Photodiode (APD) receiver, or other receivers that can recognize and receive optical signals with low power values, which is not listed here.
As shown in fig. 7, the sensitivity of the first photodiode receiver is higher, so that it is equivalent to performing amplification processing on the optical signal, and if the power value of the received modulated optical signal is higher, the noise in the received modulated optical signal is correspondingly amplified, which conversely reduces the quality of the received modulated optical signal. Therefore, for the second optical path directly formed by the direct current laser emitted by the second laser 80 of the opposite end silicon optical chip, since the power value of the modulated optical signal obtained by the second optical path through the silicon optical modulator 40 is high, if the local silicon optical chip still uses the first photodiode receiver for receiving, the quality of the received modulated optical signal will be reduced, and at this time, an attenuator may be added in the local or opposite silicon optical chip, as shown in fig. 7, the direct current laser emitted by the second laser 802 of the opposite end silicon optical chip first passes through the attenuator 90 to obtain an attenuated optical path, because the power value of the attenuated optical path is low, the power value of the modulated optical signal obtained by the attenuated optical path passing through the silicon optical modulator 40 can satisfy the power value receiving range of the first photodiode receiver of the local-end silicon optical chip. In some implementations, the end-to-end silicon optical chip may place the attenuator 90 between the silicon optical modulator 40 and the modulated optical signal output 50 as desired, that is, the laser emitted by the second laser 802 is modulated by the silicon optical modulator 40 to obtain a modulated optical signal, and then the modulated optical signal is attenuated by the attenuator 90, to reduce the power level of the modulated optical signal and transmit the attenuated optical signal through modulated optical signal output 50, as shown in figure 8, the 9 th channel (ordered from left to right) corresponding to the modulated optical signal output end 50 is set for the end-to-end silicon optical chip to correspondingly output the modulated optical signal corresponding to the second optical path emitted by the second laser 802, an attenuator 90 is disposed on the 9 th channel to perform attenuation processing on the modulated optical signal transmitted to the channel by the silicon optical modulator 40. In other implementation manners, the local-end silicon optical chip may set the attenuator 90 between the modulated optical signal output end 50 and the modulated optical signal receiving end 60 as required, at this time, the optical signal modulated by the opposite-end silicon optical chip is output through the modulated optical signal output end 50, and before the modulated optical signal receiving end 60 of the local-end silicon optical chip receives the modulated optical signal, the modulated optical signal is attenuated through the attenuator 90, so as to reduce the power value of the modulated optical signal.
In some embodiments, for the second optical path directly formed by the laser emitted by the second laser 802, a second photodiode receiver with a smaller gain value, that is, with a lower power value sensitivity, may be used for receiving, as shown in fig. 9, for the first optical path emitted by the first laser 801 used by the opposite-end silicon optical chip, the local-end silicon optical chip may use the first photodiode receiver 701 for receiving, and for the second optical path emitted by the second laser 802 used by the opposite-end silicon optical chip, the local-end silicon optical chip may use the second photodiode receiver 702 for receiving. Therefore, aiming at the light paths with different power values, the silicon optical chip can adopt different photodiode receivers to receive, not only can accurately capture the first light path with lower power value, but also can receive the second light path with higher power value, and the noise in the second light path cannot be amplified. In some embodiments, the second photodiode 702 may be a PIN photodiode receiver, or may be other receivers with small gain value and insensitive to high power value optical signals, which is not listed here.
Generally, the power consumption of the optical path through the first level one-to-two splitter is about 3dB, the power consumption of the optical path through the third level one-to-two splitter or the fourth level one-to-two splitter is about 9-12 dB, taking the APD receiver as an example, the gain range of the APD is about 7-9 dB, and thus, the power consumption of the optical path through the N level one-to-two splitter conforms to the gain range of the APD receiver, that is, the power consumption of the optical path can be compensated by the gain of the APD receiver, so that the optical signal with a lower power value can be accurately captured. In this embodiment, the number of optical paths obtained by splitting the splitter 30 may be represented by M, and generally, the greater the number of splits of the splitter 30, the fewer lasers 80 may be used, so as to improve the integration level of the silicon optical chip, and therefore, M is generally set to be greater than or equal to 4 in order to ensure the integration level of the silicon optical chip, and of course, the value of M may also be set by itself according to the needs of the number of splits, for example, M is greater than or equal to 8. The higher the number of stages of the splitter, that is, the greater the number of the split optical paths, the higher the power consumption corresponding to the optical paths, and the higher the power consumption, the lower the power value of the optical signal in the optical path may be caused, and at this time, even if the gain value of the photodiode receiver 70 is higher, it is difficult to accurately capture the optical signal with the lower power value. Therefore, in order to ensure the receiving quality of the modulated optical signal by the photodiode receiver 70, the number of stages of the splitter 30, that is, the number of optical paths obtained after splitting by the splitter 30, needs to be properly defined to ensure that the power value of the optical signal is not too low due to excessive splitting. In the present embodiment, 8. ltoreq. M.ltoreq.32 may be defined.
In some embodiments, in order to ensure the working quality of the silicon optical modulator 40 and the photodiode receiver 70, i.e. reduce the signal interference therebetween, as shown in fig. 2, the silicon optical modulator 40 and the photodiode receiver 70 are disposed on the same silicon-based substrate 10 with a distance h therebetween, where h ≧ a preset distance threshold, so that the effect of isolating the silicon optical modulator 40 from the photodiode receiver 70 is achieved by setting the spacing, thereby reducing the signal interference therebetween. In some embodiments, the silicon optical chip 01 shown in fig. 10 may also be used, in the silicon optical chip 01 shown in fig. 10, the silicon substrate 10 is in a split structure, that is, the silicon substrate 10 includes a first silicon substrate 101 and a second silicon substrate 102, the laser input end 20, the splitter 30, the silicon optical modulator 40 and the electrical signal output end 50 are integrated on the first silicon substrate 101, the electrical signal receiving end 60 and the photodiode receiver 70 are integrated on the second silicon substrate 102, and by physically separating the first silicon substrate 101 and the second silicon substrate 102, the silicon optical modulator 40 and the photodiode receiver 70 are isolated to reduce signal interference therebetween. In some implementations, the second silicon-based substrate 102 may be a substrate of another silicon optical chip, so that when a laser source needs to be added, only the first silicon-based substrate 101 and the respective optoelectronic devices integrated thereon can be added, and the existing photodiode receiver 70 on the second silicon-based substrate 102 can be directly used without repeatedly adding the photodiode receiver 70, thereby reducing the number of the photodiode receivers 70.
In some embodiments, as shown in fig. 2, each laser 80 may be directly coupled to the laser input end 20 without being connected by an optical fiber array, so that the cost may be reduced, and the integration level of the silicon optical chip 01 may be further improved by reducing the number of connecting components.
As can be seen from the above technical solutions, the silicon optical chip provided in the above embodiments, through the matching of the splitter 30 and the photodiode receiver 70, the number of the lasers 80 can be effectively reduced, specifically, the splitter 30 can split the direct current laser emitted by a smaller number of the lasers 80 into more optical paths, so that the number of the optical paths obtained after splitting meets the number of the optical paths required by the silicon optical chip 01, and simultaneously, even if the power values of the optical paths obtained by splitting through the splitter 30 are low and the power values of the modulated optical signals obtained by the optical paths through the silicon optical modulator 40 are low, the photodiode receiver 70 with higher gain can be used to accurately identify and capture the modulated optical signals with lower power values, moreover, both the splitter 30 and the photodiode receiver 70 can be integrated on the silicon-based substrate 10, thereby effectively improving the integration of the silicon optical chip 01.
The embodiments provided in the present application are only a few examples of the general concept of the present application, and do not limit the scope of the present application. Any other embodiments extended according to the scheme of the present application without inventive efforts will be within the scope of protection of the present application for a person skilled in the art.
Claims (9)
1. A silicon optical chip with high integration level is characterized in that the silicon optical chip (01) comprises a silicon substrate (10), a laser input end (20), a splitter (30), a silicon optical modulator (40), a modulated optical signal output end (50), a modulated optical signal receiving end (60) and a photodiode receiver (70);
the laser input end (20), the splitter (30), the silicon optical modulator (40), the modulated optical signal output end (50), the modulated optical signal receiving end (60) and the photodiode receiver (70) are integrated on the silicon-based substrate (10);
laser emitted by at least one laser (80) sequentially passes through the laser input end (20) and the splitter (30), the laser enters the silicon optical modulator (40), the silicon optical modulator (40) outputs a modulated optical signal through the modulated optical signal output end (50) so as to transmit the modulated optical signal to a modulated signal receiving end of an opposite-end silicon optical chip, and the modulated optical signal receiving end (60) receives the modulated optical signal output by the modulated optical signal output end of the opposite-end silicon optical chip and enters the photodiode receiver (70) through the modulated optical signal receiving end (60);
the photodiode receiver (70) employs a silicon germanium avalanche photodiode receiver.
2. The silicon microchip of claim 1, wherein the number M of branches of the splitter (30) is greater than or equal to 4.
3. The silicon microchip of claim 2, wherein the number M of branches of the splitter (30) is greater than or equal to 8.
4. The silicon photonics chip of claim 1, wherein the silicon-based substrate (10) includes a first silicon-based substrate (101) and a second silicon-based substrate (102), the first silicon-based substrate (101) and the second silicon-based substrate (102) being a unitary structure;
the laser input end (20), the splitter (30), the silicon optical modulator (40) and the modulated optical signal output end (50) are integrated on the first silicon-based substrate (101), and the modulated optical signal receiving end (60) and the photodiode receiver (70) are integrated on the second silicon-based substrate (102).
5. The silicon photonics chip of claim 1, wherein the silicon-based substrate (10) includes a first silicon-based substrate (101) and a second silicon-based substrate (102), the first silicon-based substrate (101) and the second silicon-based substrate (102) being separate components;
the laser input end (20), the splitter (30), the silicon optical modulator (40) and the modulated optical signal output end (50) are integrated on the first silicon-based substrate (101), and the modulated optical signal receiving end (60) and the photodiode receiver (70) are integrated on the second silicon-based substrate (102).
6. The silicon optical chip as set forth in claim 1, wherein the laser (80) comprises a first laser (801), the optical path comprises a first optical path, the first optical path is obtained by direct current laser emitted by the first laser (801) sequentially passing through the laser input end (20) and the splitter (30), and the number of the first optical paths is greater than or equal to the number of the preset optical paths;
the photodiode receiver (70) comprises a first photodiode receiver (701), wherein a loss value of the splitter (30) fits into a gain range of the first photodiode receiver (701), wherein the first photodiode receiver (701) employs an avalanche photodiode receiver.
7. The silicon optical chip of claim 1, wherein the laser (80) comprises a first laser (801) and a second laser (802), and the optical path comprises a first optical path and a second optical path, wherein the first optical path is obtained by laser emitted by the first laser (801) sequentially through the laser input end (20) and the splitter (30), the second optical path is obtained by laser emitted by the second laser (802) through the laser input end (20), and the total number of the first optical path and the second optical path is equal to the preset number of optical paths;
the photodiode receiver (70) comprises a first photodiode receiver (701) and a second photodiode receiver (702), the first photodiode receiver (701) is used for receiving the modulated optical signal corresponding to the first optical path, the second photodiode receiver (702) is used for receiving the modulated optical signal corresponding to the second optical path, the loss value of the splitter (30) accords with the gain range of the first photodiode receiver (701), the gain value of the first photodiode receiver (701) is larger than that of the second photodiode receiver (702), the first photodiode receiver (701) adopts an avalanche photodiode receiver, and the second photodiode receiver (702) adopts a PIN photodiode receiver.
8. The silicon optical chip of claim 1, wherein the laser (80) comprises a first laser (801) and a second laser (802), and the optical path comprises a first optical path and a second optical path, wherein the first optical path is obtained by laser emitted by the first laser (801) sequentially through the laser input end (20) and the splitter (30), the second optical path is obtained by laser emitted by the second laser (802) through the laser input end (20), and the total number of the first optical path and the second optical path is equal to the preset number of optical paths;
the silicon optical chip (01) further comprises an attenuator (90), the attenuator (90) is integrated on the silicon-based substrate (10), and an optical signal corresponding to the second optical path obtains an attenuated optical signal through the attenuator (90);
the photodiode receiver (70) comprises a first photodiode receiver (701), the first photodiode receiver (701) is used for receiving the modulated optical signal corresponding to the first optical path and the modulated optical signal corresponding to the second optical path after attenuation processing, wherein the loss value of the splitter (30) accords with the gain range of the first photodiode receiver (701), the power value of the attenuated optical signal accords with the receiving power value range of the first photodiode receiver (701), and the first photodiode receiver (701) adopts an avalanche photodiode receiver.
9. The silicon photonics chip of claim 1, wherein the laser (80) is directly coupled with the laser input (20).
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| CN202111091354.8A CN113805270B (en) | 2021-09-17 | High-integration silicon optical chip |
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