CN113805270B - High-integration silicon optical chip - Google Patents
High-integration silicon optical chip Download PDFInfo
- Publication number
- CN113805270B CN113805270B CN202111091354.8A CN202111091354A CN113805270B CN 113805270 B CN113805270 B CN 113805270B CN 202111091354 A CN202111091354 A CN 202111091354A CN 113805270 B CN113805270 B CN 113805270B
- Authority
- CN
- China
- Prior art keywords
- silicon
- optical
- laser
- photodiode receiver
- splitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 354
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 206
- 239000010703 silicon Substances 0.000 title claims abstract description 206
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 201
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 230000002238 attenuated effect Effects 0.000 claims description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12123—Diode
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/1215—Splitter
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Communication System (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The utility model provides a silicon optical chip of high integration level, through the cooperation of branching unit and avalanche photodiode receiver, can effectively reduce the quantity of laser instrument. Specifically, the direct current laser emitted by a small number of lasers can be split into more light paths through the splitter, so that the number of the light paths obtained after splitting meets the number of the light paths required by the silicon optical chip, and meanwhile, even if the power value of the light paths obtained after splitting through the splitter is lower, the power value of the modulated optical signals obtained by the light paths through the silicon optical modulator is lower, the modulated optical signals with lower power values can be accurately identified and captured by adopting the photodiode receiver with higher gain, and the splitter and the photodiode receiver can be integrated on the silicon substrate, so that the integration level of the silicon optical chip can be effectively improved.
Description
Technical Field
The application relates to the technical field of silicon optical chips, in particular to a silicon optical chip with high integration level.
Background
A chip (microchip) is a product obtained by printing an integrated circuit (Integrated Circuit, IC) on a semiconductor substrate by photolithography, wherein the integrated circuit includes a number of usual electronic components, which are integrated together by a semiconductor process to form a circuit having a specific function, to realize various functions, whereby the chip can realize corresponding functions by the integrated circuits. The chip made of the integrated circuit uses electronics as an information carrier, so that the chip is affected by problems such as power consumption, delay and the like in a signal transmission mode, thereby reducing the performance of the chip.
In order to improve the performance of the chip, the integrated circuit may be replaced by an integrated optical circuit to obtain a silicon optical chip, wherein the integrated optical circuit comprises a silicon substrate and a certain number of optoelectronic devices, such as a laser, a silicon optical modulator, a photodetector and the like, and the optoelectronic devices may be integrated on the silicon substrate through standard semiconductor processes to form an optoelectronic path with specific functions, namely, photons and electrons are used as information carriers at the same time, so as to improve the information transmission speed of the chip and reduce the power consumption.
Today's devices are increasingly being miniaturized, and if silicon photonics chips are to be used in these ultra-miniature devices, it is desirable to further increase the integration of optoelectronic devices in the silicon photonics chip to reduce the volume of the silicon photonics chip. Since the silicon substrate is made of indirect band gap material and is difficult to emit light, if the laser is directly integrated on the silicon substrate, the laser is difficult to form a light path on the silicon substrate, therefore, as shown in fig. 1, the laser 1 can only be externally arranged on the silicon substrate 2, namely, is arranged on the semiconductor substrate 3, and a corresponding laser input end 4 is arranged on the silicon substrate 2, so that the laser emitted by the laser 1 forms a light path on the silicon substrate 2 through the laser input end 4, finally enters the silicon optical modulator 5, and then outputs a modulated optical signal to an opposite silicon optical chip through the silicon optical modulator 5 through the modulated optical signal output end 6, the modulated optical signal output by the opposite silicon optical chip is received by the modulated optical signal receiving end 7, and information carried in the modulated optical signal is collected by the photodiode receiver 8. However, since the lasers 1 cannot be integrated on the silicon substrate 2, the integration level of the silicon optical chip is low, and since the silicon optical chip generally needs to be provided with a plurality of optical paths, and each optical path is generated by a corresponding one of the lasers 1, the number of the lasers 1 is correspondingly high, and the lasers 1 are difficult to integrate together, so that the integration level between the lasers 1 is low and the volume is large, thereby further reducing the integration level of the silicon optical chip.
Disclosure of Invention
The present application provides a high integration silicon optical chip to improve the integration of the silicon optical chip by reducing the number of lasers.
The application provides a high-integration silicon optical chip, which comprises a silicon substrate, a laser input end, a branching device, a silicon optical modulator, a modulated optical signal output end, a modulated optical signal receiving end and a photodiode receiver;
the laser input end, the branching unit, the silicon optical modulator, the modulated optical signal output end, the modulated optical signal receiving end and the photodiode receiver are integrated on the silicon-based substrate;
the laser emitted by at least one laser sequentially passes through the laser input end and the splitter, the laser enters the silicon optical modulator, the silicon optical modulator outputs a modulated optical signal through the modulated optical signal output end so as to be transmitted to a modulated signal receiving end of an opposite-end silicon optical chip, and the modulated optical signal receiving end receives the modulated optical signal output by the modulated optical signal output end of the opposite-end silicon optical chip and enters the photodiode receiver through the modulated optical signal receiving end;
the photodiode receiver employs a silicon germanium avalanche photodiode receiver.
In one implementation, the number of branches M of the splitter is equal to or greater than 4.
In one implementation, the number of branches M of the splitter is greater than or equal to 8.
In one implementation, the silicon-based substrate includes a first silicon-based substrate and a second silicon-based substrate, the first silicon-based substrate and the second silicon-based substrate being of unitary construction;
the laser input end, the branching unit, the silicon light modulator and the modulated light signal output end are integrated on the first silicon-based substrate, the modulated light signal receiving end and the photodiode receiver are integrated on the second silicon-based substrate, and the distance between the silicon light modulator and the photodiode receiver accords with a preset distance threshold.
In one implementation, the silicon-based substrate includes a first silicon-based substrate and a second silicon-based substrate, both of which are separate components;
the laser input end, the splitter, the silicon optical modulator and the modulated optical signal output end are integrated on the first silicon-based substrate, and the modulated optical signal receiving end and the photodiode receiver are integrated on the second silicon-based substrate.
In one implementation manner, the laser includes a first laser, the optical paths include a first optical path, direct current laser emitted by the first laser sequentially passes through the laser input end and the splitter to obtain the first optical paths, and the number of the first optical paths is greater than or equal to the preset number of optical paths;
the photodiode receiver comprises a first photodiode receiver, wherein the loss value of the shunt accords with the gain range of the first photodiode receiver, and the first photodiode receiver adopts an avalanche photodiode receiver.
In one implementation manner, the laser device comprises a first laser device and a second laser device, the optical paths comprise a first optical path and a second optical path, wherein laser emitted by the first laser device sequentially passes through the laser input end and the splitter to obtain the first optical path, laser emitted by the second laser device passes through the laser input end to obtain the second optical path, and the total number of the first optical path and the second optical path is equal to the preset optical path number;
the photodiode receiver comprises a first photodiode receiver and a second photodiode receiver, the first photodiode receiver is used for receiving the modulated optical signals corresponding to the first optical path, the second photodiode receiver is used for receiving the modulated optical signals corresponding to the second optical path, the loss value of the splitter accords with the gain range of the first photodiode receiver, the gain value of the first photodiode receiver is larger than the gain value of the second photodiode receiver, and the first photodiode receiver adopts an avalanche photodiode receiver, and the second photodiode receiver adopts a PIN photodiode receiver.
In one implementation manner, the laser device comprises a first laser device and a second laser device, the optical paths comprise a first optical path and a second optical path, wherein laser emitted by the first laser device sequentially passes through the laser input end and the splitter to obtain the first optical path, laser emitted by the second laser device passes through the laser input end to obtain the second optical path, and the total number of the first optical path and the second optical path is equal to the preset optical path number;
the silicon optical chip further comprises an attenuator, the attenuator is integrated on the silicon-based substrate, and the optical signal corresponding to the second optical path is attenuated by the attenuator;
the photodiode receiver comprises a first photodiode receiver, the first photodiode receiver is used for receiving the modulated optical signal corresponding to the first optical path and the modulated optical signal corresponding to the second optical path after attenuation processing, wherein the loss value of the splitter accords with the gain range of the first photodiode receiver, and the power value of the attenuated optical signal accords with the receiving power value range of the first photodiode receiver, and the first photodiode receiver adopts an avalanche photodiode receiver.
In one implementation, the laser is directly coupled to the laser input.
According to the technical scheme, the silicon optical chip provided by the application can effectively reduce the number of lasers through the cooperation of the branching device and the photodiode receiver. Specifically, the direct current laser emitted by a small number of lasers can be split into more light paths through the splitter, so that the number of the split light paths meets the number of the light paths required by the silicon optical chip. The opposite-end silicon optical chip also adopts the same structure, the power value of the optical path obtained after the opposite-end silicon optical chip is split by the splitter is lower, the power value of the modulated optical signals obtained by the optical paths through the silicon optical modulator is lower, the silicon optical chip at the local end can accurately identify and capture the modulated optical signals with lower power values by adopting the avalanche photodiode receiver with higher gain, and the splitter and the photodiode receiver at the local end can be integrated on the silicon substrate, so that the integration level of the silicon optical chip can be effectively improved.
Drawings
In order to more clearly illustrate the technical solutions of the present application, the drawings that are needed in the embodiments will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a low-integration silicon optical chip provided in the present application;
fig. 2 is a schematic structural diagram of a high-integration silicon optical chip provided in the present application;
fig. 3 is a schematic structural diagram of an integrated chip provided in the present application;
fig. 4 is a schematic structural diagram of a laser input end provided in the present application;
FIG. 5 is a schematic structural diagram of a silicon optical chip with 16 optical paths formed by two lasers and two three-stage one-to-two splitters;
FIG. 6 is a schematic structural diagram of a silicon optical chip with 15 optical paths formed by a laser and a four-stage one-to-two splitter;
FIG. 7 is a schematic structural diagram of a silicon optical chip with 9 optical paths formed by a first laser, a three-stage one-to-two splitter and a second laser;
FIG. 8 is a schematic diagram of the arrangement of attenuators in a silicon optical chip according to the present application;
FIG. 9 is a schematic diagram of a silicon photonics chip with a second photodiode receiver provided herein;
fig. 10 is a schematic structural diagram of a silicon optical chip using a split silicon substrate provided in the present application.
Illustration of:
1-laser, 2-silicon substrate, 3-semiconductor substrate, 4-laser input, 5-silicon optical modulator, 6-modulated optical signal output, 7-modulated optical signal receiving, 8-photodiode receiver, 100-integrated chip, 01-silicon optical chip, 02-semiconductor substrate, 03-trace, 04-other chip, 10-silicon substrate, 101-first silicon substrate, 102-second silicon substrate, 20-laser input, 201-optical path channel, 30-splitter, 40-silicon optical modulator, 50-modulated optical signal output, 60-modulated optical signal receiving, 70-photodiode receiver, 701-first photodiode receiver, 702-second photodiode receiver, 80-laser, 800-direct current laser, 801-first laser, 802-second laser, 90-attenuator.
Detailed Description
Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The embodiments described in the examples below do not represent all embodiments consistent with the present application. Merely as examples of systems and methods consistent with some aspects of the present application as detailed in the claims.
It should be noted that the brief description of the terms in the present application is only for convenience in understanding the embodiments described below, and is not intended to limit the embodiments of the present application. Unless otherwise indicated, these terms should be construed in their ordinary and customary meaning.
The terms "first," second, "" third and the like in the description and in the claims and in the above-described figures are used for distinguishing between similar or similar objects or entities and not necessarily for limiting a particular order or sequence, unless otherwise indicated. It is to be understood that the terms so used are interchangeable under appropriate circumstances.
The terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a product or apparatus that comprises a list of elements is not necessarily limited to all elements explicitly listed, but may include other elements not expressly listed or inherent to such product or apparatus.
The term "module" refers to any known or later developed hardware, software, firmware, artificial intelligence, fuzzy logic, or combination of hardware or/and software code that is capable of performing the function associated with that element.
In this embodiment, the optical signal transmission occurs between the home-end silicon optical chip and the opposite-end silicon optical chip, where the home-end silicon optical chip and the opposite-end silicon optical chip both adopt the same structure, and the home-end silicon optical chip (hereinafter, referred to as the silicon optical chip simply without causing ambiguity) is taken as an example. Fig. 2 is a schematic structural diagram of a silicon optical chip according to an embodiment of the present application, and as shown in fig. 2, the silicon optical chip 01 provided in this embodiment includes a silicon substrate 10, a laser input end 20, a splitter 30, a silicon optical modulator 40, a modulated optical signal output end 50, a modulated optical signal receiving end 60, and a photodiode receiver 70.
In general, as shown in fig. 3, a silicon optical chip 01 is integrated on a semiconductor substrate 02 and is electrically connected with the semiconductor substrate 02, wires 03 are laid on the semiconductor substrate 02, meanwhile, other chips 04 are arranged on the semiconductor substrate 02, the silicon optical chip 01 is electrically connected with the other chips 04 through the corresponding wires 03, and information transmission between the silicon optical chip 01 and the other chips 04 is achieved, so that an integrated chip 100 is formed by the silicon optical chip 01 and the other chips 04 integrated on the semiconductor substrate 02, and the integrated chip 100 can be assembled into corresponding equipment as a controller, for example, in a mobile phone, a tablet computer, an intelligent wearable equipment and the like, so as to control corresponding hardware in the equipment. The following describes the workflow of each component on the silicon optical chip, and the workflow of each component on the opposite silicon optical chip is the same.
The laser 80 is used as a light source device of the silicon optical chip 01, and the emitted laser light is a carrier for transmitting information, and is based on the material property of the silicon substrate 10 (indirect bandgap material, difficult to emit light), so that it is difficult to integrate the laser 80 directly on the silicon substrate 10, i.e., it is difficult to directly conduct photons through the silicon substrate 10, i.e., it is difficult to directly form an optical path on the silicon substrate 10. Thus, in order to obtain a high-quality optical path and ensure the quality of subsequent information transmission, the laser 80 is externally arranged on the silicon substrate 10, that is, the laser 80 is arranged on the semiconductor substrate 02, and the laser input end 20 is arranged on the silicon substrate 10, so that the laser emitted by the laser 80 forms an optical path on the silicon substrate 10 through the laser input end 20. As shown in fig. 4, the laser input end 20 is provided with an optical path 201, and the direct current laser 801 emitted by the laser 80 enters the optical path 201 in a direction indicated by an arrow in fig. 4, and the optical path 201 can introduce the internal direct current laser 800 into a next optoelectronic device, for example, the silicon optical modulator 40 shown in fig. 4.
According to the service requirement, the number of laser light paths required, that is, the preset number of light paths, is preset when designing the silicon optical chip 01, and generally, only one light path can be formed correspondingly by the direct current laser emitted by each laser 80, so in order to meet the preset number of light paths, the lasers 80 equal to the preset number of light paths need to be set. In general, the more the number of preset optical paths, the more carriers used for transmitting information, the more traffic signals can be carried to transmit more information, and for transmitting the same amount of traffic signals, the more the number of preset optical paths, the faster the information transmission speed. The more the number of preset optical paths, the more the lasers 80 are correspondingly, and because the lasers 80 are difficult to integrate, the more the lasers 80 which are difficult to integrate and have a large number can form a large volume, so that the integration level of the silicon optical chip 01 is lower.
In order to improve the integration level of the silicon optical chip 01, as shown in fig. 2, the number of the lasers 80 may be reduced, and the splitter 30 is integrated on the silicon substrate 10, so that the laser light emitted by the lasers 80 is split into multiple paths of laser light through the splitter 30, that is, multiple paths are formed, so that the number of the paths is ensured on the basis of reducing the number of the lasers 80. As shown in fig. 2, a four-stage one-to-two splitter is integrated on the silicon substrate 10, and the direct current laser emitted by the laser 80 enters the four-stage one-to-two splitter through the laser input end 20, and the four-stage one-to-two splitter splits the direct current laser into 16 light paths, so that 16 lasers originally taking the emitted direct current laser as the light paths are reduced to 1 laser. It can be seen that the number of lasers 80 can be effectively reduced by the splitter 30.
In some embodiments, the splitter 30 may be an N-stage splitter, the number of stages of the splitter 30 may be set according to the preset number of optical paths, and the number of branches of each stage of the splitter 30 may also be set according to needs (for convenience of description, in this embodiment, the number of branches of each stage is 2, that is, a one-way splitter is taken as an example). The laser 80 may be one laser 80 or a plurality of lasers 80 as required. For example, if the number of preset optical paths is 16, as shown in fig. 2, a laser 80 may be used together with a four-stage one-to-two splitter (n=4); as shown in fig. 5, two lasers 80 may be used together with two three-stage one-to-two splitters (n=3), and the laser light emitted by each laser 80 is split into 8 light paths by the corresponding three-stage one-to-two splitter, so that the two laser light emitted by the two lasers 80 may be split into 16 light paths by the two three-stage one-to-two splitters.
In some embodiments, if the number of preset optical paths is set to be odd, the optical paths may still be obtained by splitting the laser light emitted by each laser 80 by the N-level one-to-two splitter to obtain the optical paths. For example, the number of preset optical paths is 15, as shown in fig. 6, a laser 80 may be used together with a four-stage one-to-two splitter, and at this time, the laser 80 may obtain 16 optical paths through the four-stage one-to-two splitter, and the number of optical paths obtained by splitting is greater than the number of preset optical paths, so that the design requirement of the silicon optical chip 01 on the number of optical paths can be satisfied. At this time, the silicon optical modulator 40 may optionally select 15 optical paths from the 16 optical paths to load the service signal, as shown in fig. 6, where the modulated optical signal output end 50 also has 15 optical path channels to transmit the 15 optical paths modulated by the silicon optical modulator 40.
In some embodiments, if the number of preset optical paths is set to be an odd number, the optical paths may be obtained by splitting the laser emitted by the part of lasers 80 by using N-level one-to-two splitters, and the optical paths may be obtained by matching the way that the part of lasers 80 takes the emitted laser as the optical paths, in this embodiment, the part of lasers 80 that need to be split by using the splitter to obtain the optical paths may be referred to as a first laser 801, and the part of lasers 80 that directly takes the emitted laser as the optical paths may be referred to as a second laser 802. For example, as shown in fig. 7, a first laser 801 may be used together with a third-stage one-to-two splitter and a second laser 802, so that laser emitted by the first laser 801 may be split into 8 first optical paths through the third-stage one-to-two splitter, the laser emitted by the second laser 802 is 1 second optical path, and the total number of the first optical paths and the second optical paths satisfies the preset optical path number.
The optical path obtained after splitting by the splitter 30 enters the silicon optical modulator 40, and the silicon optical modulator 40 loads the service signal on the optical signal to obtain a modulated optical signal, and the modulated optical signal is output by the modulated optical signal output end 50.
Correspondingly, the opposite-end silicon optical chip also adopts the same process as the process to obtain the modulated optical signal, and the modulated optical signal is output by the modulated optical signal output end on the opposite-end silicon optical chip. Through the above process, a certain power consumption is generated when the laser beam passes through the splitter 30, so to speak, the splitter 30 has corresponding power consumption, the power consumption of each optical path obtained after splitting is lower than the power value of the original direct current laser beam, and because the power values of the optical paths are lower, the power values of the modulated optical signals obtained by the optical silicon modulator 40 of the optical paths with lower power values are correspondingly lower, the optical signals modulated by the opposite-end silicon optical chip are difficult to be identified and captured by the photodiode receiver 70 of the local-end silicon optical chip, so that in order to ensure the receiving quality of the optical signals by the photodiode receiver 70, the photodiode receiver 70 can receive all the optical paths to ensure the validity and the integrity of information transmission, and the power consumption of the optical paths passing through the splitter 30 is required to be in accordance with the gain range of the photodiode receiver 70, namely, the gain of the photodiode receiver 70 can make the optical signals received by the optical paths with lower power values obtained after splitting by the splitter 30. In the present embodiment, the photodiode receiver 70 of the optical path whose gain range satisfies the lower power value as described above may be referred to as a first photodiode receiver. For example, the photodiode receivers 70 in fig. 2, 5, and 6 are each a first photodiode receiver, and the sensitivity of capturing the first optical path can be improved by the gain of the first photodiode receiver. In some embodiments, the first photodiode receiver may be an avalanche photodiode (Avalanche Photon Diode, APD) receiver, or other receivers that can identify and receive low power optical signals, not shown herein.
As shown in fig. 7, the sensitivity of the first photodiode receiver is high, so that the first photodiode receiver performs amplification processing on the optical signal, and if the power value of the received modulated optical signal is high, noise in the optical signal is amplified correspondingly, which reduces the quality of the received modulated optical signal. Therefore, for the second optical path directly formed by the direct current laser light emitted by the second laser 80 on the opposite silicon optical chip, since the power value of the modulated optical signal obtained by the second optical path through the silicon optical modulator 40 is higher, if the silicon optical chip on the local end still uses the first photodiode receiver to receive the modulated optical signal, the quality of the received modulated optical signal is reduced, at this time, an attenuator may be added to the silicon optical chip on the local end or on the opposite end, as shown in fig. 7, the direct current laser light emitted by the second laser 802 on the opposite silicon optical chip first passes through the attenuator 90 to obtain an attenuated optical path, and since the power value of the attenuated optical path is lower, the power value of the modulated optical signal obtained by the attenuated optical path through the silicon optical modulator 40 may satisfy the power value receiving range of the first photodiode receiver on the silicon optical chip on the local end. In some implementations, the opposite-end silicon optical chip may set the attenuator 90 between the silicon optical modulator 40 and the modulated optical signal output end 50 according to needs, that is, after the laser emitted by the second laser 802 is modulated by the silicon optical modulator 40 to obtain a modulated optical signal, the modulated optical signal is attenuated by the attenuator 90 to reduce the power value of the modulated optical signal, and then the attenuated optical signal is transmitted by the modulated optical signal output end 50, as shown in fig. 8, the opposite-end silicon optical chip sets the 9 th channel (according to the order from left to right) corresponding to the modulated optical signal output end 50 and outputs the modulated optical signal corresponding to the second optical path emitted by the second laser 802, and then sets the attenuator 90 on the 9 th channel to attenuate the modulated optical signal transmitted by the silicon optical modulator 40 onto the first channel. In other implementations, the local silicon optical chip may set the attenuator 90 between the modulated optical signal output end 50 and the modulated optical signal receiving end 60 as required, and at this time, the optical signal modulated by the opposite silicon optical chip is output through the modulated optical signal output end 50, and before the modulated optical signal is received by the modulated optical signal receiving end 60 of the local silicon optical chip, the attenuator 90 attenuates the modulated optical signal to reduce the power value of the modulated optical signal.
In some embodiments, for the second optical path directly formed by the laser light emitted by the second laser 802, a second photodiode receiver with a smaller gain value, i.e., a lower power value sensitivity, may be used to receive, as shown in fig. 9, the first optical path emitted by the first laser 801 for the opposite silicon optical chip, the first photodiode receiver 701 for the local silicon optical chip, and the second optical path emitted by the second laser 802 for the opposite silicon optical chip, the second photodiode receiver 702 for the local silicon optical chip. Therefore, for light paths with different power values, the silicon optical chip can adopt different photodiode receivers to receive, not only can accurately capture a first light path with lower power value, but also can receive a second light path with higher power value, and noise in the second light path can not be amplified. In some embodiments, the second photodiode 702 may be a PIN photodiode receiver, or other receivers with smaller gain values that are insensitive to high power optical signals, not shown here.
In general, the power consumption of the optical path corresponding to the first-stage one-to-two-way device is about 3dB, and the power consumption of the optical path corresponding to the third-stage one-to-two-way device or the fourth-stage one-to-two-way device is about 9-12 dB, for example, the gain range of the APD is about 7-9 dB, and it can be seen that the power consumption of the optical path corresponding to the N-stage one-to-two-way device accords with the gain range of the APD receiver, i.e., the gain of the APD receiver can compensate the power consumption of the optical path, so that the optical signal with a lower power value can be accurately captured. In this embodiment, the number of optical paths obtained after splitting the splitter 30 may be denoted by M, and in general, the more the number of splits of the splitter 30, the fewer lasers 80 may be used, so as to improve the integration level of the silicon optical chip, so that in order to ensure the integration level of the silicon optical chip, M is generally set to be greater than or equal to 4, and of course, the value of M may be set according to the needs of the number of splits, for example, M is greater than or equal to 8. The higher the number of stages of the splitter, i.e. the greater the number of optical paths obtained by splitting, the higher the power consumption corresponding to the optical paths, and the higher the power consumption, the lower the power value of the optical signal in the optical paths, at this time, even if the gain value of the photodiode receiver 70 is higher, it is difficult to accurately capture the optical signals with the lower power values. Therefore, in order to ensure the reception quality of the modulated optical signal by the photodiode receiver 70, it is necessary to appropriately define the number of stages of the splitter 30, that is, the number of optical paths obtained after splitting by the splitter 30, to ensure that the power value of the optical signal is not excessively low due to excessive splitting. In this embodiment, 8.ltoreq.M.ltoreq.32 may be defined.
In some embodiments, in order to ensure the working quality of the silicon optical modulator 40 and the photodiode receiver 70, i.e. reduce the signal interference between the two, as shown in fig. 2, the silicon optical modulator 40 and the photodiode receiver 70 are disposed on the same silicon substrate 10 with a distance h therebetween, where h is greater than or equal to a preset distance threshold, so that the effect of isolating the silicon optical modulator 40 and the photodiode receiver 70 is achieved by setting the distance, thereby reducing the signal interference between the two. In some embodiments, the silicon optical chip 01 as shown in fig. 10 may also be used, in the silicon optical chip 01 shown in fig. 10, the silicon substrate 10 adopts a split structure, that is, the silicon substrate 10 includes a first silicon substrate 101 and a second silicon substrate 102, the laser input terminal 20, the splitter 30, the silicon optical modulator 40 and the electrical signal output terminal 50 are integrated on the first silicon substrate 101, the electrical signal receiving terminal 60 and the photodiode receiver 70 are integrated on the second silicon substrate 102, and isolation between the silicon optical modulator 40 and the photodiode receiver 70 is achieved through physical separation of the first silicon substrate 101 and the second silicon substrate 102 so as to reduce signal interference between the two. In some implementations, the second silicon-based substrate 102 may be a substrate of another silicon optical chip, so that when a laser source needs to be added, only the first silicon-based substrate 101 and various optoelectronic devices integrated thereon may be added, and the existing photodiode receiver 70 on the second silicon-based substrate 102 may be directly used, without repeatedly adding the photodiode receiver 70, so that the number of photodiode receivers 70 may be reduced.
In some embodiments, as shown in fig. 2, each laser 80 may be directly coupled to the laser input end 20 without a fiber array connection, so that the cost may be reduced, and the integration level of the silicon optical chip 01 may be further improved by reducing the connection components.
As can be seen from the above technical solution, the silicon optical chip provided in the above embodiment can effectively reduce the number of lasers 80 by matching the splitter 30 with the photodiode receiver 70, specifically, the splitter 30 can split the direct current laser emitted by a smaller number of lasers 80 into more optical paths, so that the number of optical paths obtained after splitting meets the number of optical paths required by the silicon optical chip 01, and meanwhile, even if the power value of the optical paths obtained after splitting by the splitter 30 is lower, the power value of the modulated optical signal obtained by the optical paths through the silicon optical modulator 40 is lower, the photodiode receiver 70 with higher gain can also be used to accurately identify and capture the modulated optical signal with lower power value, and the splitter 30 and the photodiode receiver 70 can be integrated on the silicon substrate 10, thereby effectively improving the integration level of the silicon optical chip 01.
The foregoing detailed description of the embodiments is merely illustrative of the general principles of the present application and should not be taken in any way as limiting the scope of the invention. Any other embodiments developed in accordance with the present application without inventive effort are within the scope of the present application for those skilled in the art.
Claims (9)
1. The high-integration silicon optical chip is characterized in that the silicon optical chip (01) comprises a silicon substrate (10), a laser input end (20), a branching device (30), a silicon optical modulator (40), a modulation optical signal output end (50), a modulation optical signal receiving end (60) and a photodiode receiver (70);
-the laser input (20), the splitter (30), the silicon optical modulator (40), the modulated optical signal output (50), the modulated optical signal receiving (60) and the photodiode receiver (70) are integrated on the silicon-based substrate (10);
laser emitted by at least one laser (80) sequentially passes through the laser input end (20) and the splitter (30) to form a light path, the laser enters the silicon optical modulator (40), the silicon optical modulator (40) outputs a modulated optical signal through the modulated optical signal output end (50) so as to be transmitted to a modulated signal receiving end of an opposite-end silicon optical chip, and the modulated optical signal receiving end (60) receives a modulated optical signal output by the modulated optical signal output end of the opposite-end silicon optical chip and enters the photodiode receiver (70) through the modulated optical signal receiving end (60);
the photodiode receiver (70) employs a silicon germanium avalanche photodiode receiver.
2. The silicon optical chip according to claim 1, wherein the branching number M of the branching unit (30) is equal to or greater than 4.
3. The silicon optical chip according to claim 2, wherein the branching number M of the branching unit (30) is equal to or greater than 8.
4. The silicon optical chip according to claim 1, wherein the silicon-based substrate (10) comprises a first silicon-based substrate (101) and a second silicon-based substrate (102), the first silicon-based substrate (101) and the second silicon-based substrate (102) being of unitary construction;
the laser input (20), the splitter (30), the silicon optical modulator (40) and the modulated optical signal output (50) are integrated on the first silicon-based substrate (101), and the modulated optical signal receiving end (60) and the photodiode receiver (70) are integrated on the second silicon-based substrate (102).
5. The silicon photonics chip of claim 1, wherein the silicon-based substrate (10) comprises a first silicon-based substrate (101) and a second silicon-based substrate (102), the first silicon-based substrate (101) and the second silicon-based substrate (102) being separate components;
the laser input (20), the splitter (30), the silicon optical modulator (40) and the modulated optical signal output (50) are integrated on the first silicon-based substrate (101), and the modulated optical signal receiving end (60) and the photodiode receiver (70) are integrated on the second silicon-based substrate (102).
6. The silicon optical chip according to claim 1, wherein the laser (80) comprises a first laser (801), the optical path comprises a first optical path, the first optical path is obtained by sequentially passing the direct current laser emitted by the first laser (801) through the laser input end (20) and the splitter (30), and the number of the first optical paths is greater than or equal to the preset number of optical paths;
the photodiode receiver (70) comprises a first photodiode receiver (701), wherein the loss value of the splitter (30) corresponds to the gain range of the first photodiode receiver (701), wherein the first photodiode receiver (701) employs an avalanche photodiode receiver.
7. The silicon optical chip according to claim 1, wherein the laser (80) comprises a first laser (801) and a second laser (802), the optical paths comprise a first optical path and a second optical path, wherein laser light emitted by the first laser (801) sequentially passes through the laser input end (20) and the splitter (30) to obtain the first optical path, laser light emitted by the second laser (802) passes through the laser input end (20) to obtain the second optical path, and the total number of the first optical path and the second optical path is equal to a preset optical path number;
the photodiode receiver (70) comprises a first photodiode receiver (701) and a second photodiode receiver (702), the first photodiode receiver (701) is used for receiving the modulated optical signal corresponding to the first optical path, the second photodiode receiver (702) is used for receiving the modulated optical signal corresponding to the second optical path, the loss value of the splitter (30) accords with the gain range of the first photodiode receiver (701), and the gain value of the first photodiode receiver (701) is larger than the gain value of the second photodiode receiver (702), wherein the first photodiode receiver (701) adopts an avalanche photodiode receiver, and the second photodiode receiver (702) adopts a PIN photodiode receiver.
8. The silicon optical chip according to claim 1, wherein the laser (80) comprises a first laser (801) and a second laser (802), the optical paths comprise a first optical path and a second optical path, wherein laser light emitted by the first laser (801) sequentially passes through the laser input end (20) and the splitter (30) to obtain the first optical path, laser light emitted by the second laser (802) passes through the laser input end (20) to obtain the second optical path, and the total number of the first optical path and the second optical path is equal to a preset optical path number;
the silicon optical chip (01) further comprises an attenuator (90), the attenuator (90) is integrated on the silicon-based substrate (10), and the optical signal corresponding to the second optical path is attenuated by the attenuator (90);
the photodiode receiver (70) comprises a first photodiode receiver (701), wherein the first photodiode receiver (701) is used for receiving the modulated optical signal corresponding to the first optical path and the modulated optical signal corresponding to the second optical path after attenuation processing, the loss value of the splitter (30) accords with the gain range of the first photodiode receiver (701), and the power value of the attenuated optical signal accords with the receiving power value range of the first photodiode receiver (701), wherein the first photodiode receiver (701) adopts an avalanche photodiode receiver.
9. The silicon photonics chip of claim 1 wherein the laser (80) is directly coupled to the laser input (20).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111091354.8A CN113805270B (en) | 2021-09-17 | 2021-09-17 | High-integration silicon optical chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111091354.8A CN113805270B (en) | 2021-09-17 | 2021-09-17 | High-integration silicon optical chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113805270A CN113805270A (en) | 2021-12-17 |
| CN113805270B true CN113805270B (en) | 2024-04-16 |
Family
ID=78895720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111091354.8A Active CN113805270B (en) | 2021-09-17 | 2021-09-17 | High-integration silicon optical chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113805270B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114879208B (en) * | 2022-06-30 | 2022-11-01 | 北京摩尔芯光半导体技术有限公司 | Frequency modulation continuous wave laser radar system |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN104459881A (en) * | 2014-12-31 | 2015-03-25 | 武汉邮电科学研究院 | Wavelength division multiplexing type silicon substrate optical receiving chip insensitive to polarization |
| CN105515677A (en) * | 2015-12-03 | 2016-04-20 | 武汉邮电科学研究院 | Silicon photonics integration multi-wavelength optical sending and receiving module |
| CN206848526U (en) * | 2017-02-14 | 2018-01-05 | 上海新微科技服务有限公司 | Silicon substrate WDM optical transceiver modules |
| CN109884754A (en) * | 2019-04-23 | 2019-06-14 | 苏州海光芯创光电科技有限公司 | A kind of coupled structure and encapsulating structure of laser and silicon optical chip |
| CN110830119A (en) * | 2019-11-13 | 2020-02-21 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN111342903A (en) * | 2020-03-31 | 2020-06-26 | 亨通洛克利科技有限公司 | Heterogeneous integrated CWDM4 light emitting chip |
| CN111551914A (en) * | 2020-05-26 | 2020-08-18 | 中国电子科技集团公司电子科学研究院 | Optical phased array device, laser radar and detection method based on laser radar |
| WO2020253137A1 (en) * | 2019-06-21 | 2020-12-24 | 武汉光迅科技股份有限公司 | Modulation chip and light emission module |
| CN112782811A (en) * | 2019-11-07 | 2021-05-11 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
| CN112965183A (en) * | 2021-03-11 | 2021-06-15 | 宁波芯速联光电科技有限公司 | Silicon optical module |
| CN113281841A (en) * | 2021-04-16 | 2021-08-20 | 武汉联特科技股份有限公司 | Silicon optical multichannel parallel optical component and coupling method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003032547A2 (en) * | 2001-10-09 | 2003-04-17 | Infinera Corporation | Transmitter photonic integrated circuit |
| US20060239612A1 (en) * | 2002-06-19 | 2006-10-26 | Peter De Dobbelaere | Flip-chip devices formed on photonic integrated circuit chips |
| US20060210215A1 (en) * | 2005-03-15 | 2006-09-21 | Shigenori Aoki | Optical transceiver array |
| CN109073828B (en) * | 2016-03-21 | 2021-01-15 | 博创科技英国有限公司 | Optical interconnect with optical splitter and modulator integrated on the same chip |
-
2021
- 2021-09-17 CN CN202111091354.8A patent/CN113805270B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN104459881A (en) * | 2014-12-31 | 2015-03-25 | 武汉邮电科学研究院 | Wavelength division multiplexing type silicon substrate optical receiving chip insensitive to polarization |
| CN105515677A (en) * | 2015-12-03 | 2016-04-20 | 武汉邮电科学研究院 | Silicon photonics integration multi-wavelength optical sending and receiving module |
| CN206848526U (en) * | 2017-02-14 | 2018-01-05 | 上海新微科技服务有限公司 | Silicon substrate WDM optical transceiver modules |
| CN109884754A (en) * | 2019-04-23 | 2019-06-14 | 苏州海光芯创光电科技有限公司 | A kind of coupled structure and encapsulating structure of laser and silicon optical chip |
| WO2020253137A1 (en) * | 2019-06-21 | 2020-12-24 | 武汉光迅科技股份有限公司 | Modulation chip and light emission module |
| CN112782811A (en) * | 2019-11-07 | 2021-05-11 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN110830119A (en) * | 2019-11-13 | 2020-02-21 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN111342903A (en) * | 2020-03-31 | 2020-06-26 | 亨通洛克利科技有限公司 | Heterogeneous integrated CWDM4 light emitting chip |
| CN111551914A (en) * | 2020-05-26 | 2020-08-18 | 中国电子科技集团公司电子科学研究院 | Optical phased array device, laser radar and detection method based on laser radar |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
| CN112965183A (en) * | 2021-03-11 | 2021-06-15 | 宁波芯速联光电科技有限公司 | Silicon optical module |
| CN113281841A (en) * | 2021-04-16 | 2021-08-20 | 武汉联特科技股份有限公司 | Silicon optical multichannel parallel optical component and coupling method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113805270A (en) | 2021-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2015154389A1 (en) | Optical transceiving module and configuration method and device for operating parameter thereof | |
| JPH1084323A (en) | Receiver for digital signal transmission system using optical communication channel | |
| CN113805270B (en) | High-integration silicon optical chip | |
| CN105071865A (en) | Distance transmission CFP optical module in 100G | |
| EP2077631A1 (en) | Optical transceiver amplifier | |
| CN109743113A (en) | Optical module and optical line terminal | |
| US9166678B1 (en) | Heterogeneous microwave photonic circuits | |
| US6525858B1 (en) | Optical receiver and optical network system using thereof | |
| CN112346181A (en) | Optical module | |
| WO2016141873A1 (en) | Optical signal transmission system and method, and optical communication device | |
| CN214480630U (en) | Multi-path laser array receiving device | |
| Tan et al. | Experimental demonstration for over Mbps baseband-over-modulation AMCC implementation in PtP WDM-PON | |
| JP5368370B2 (en) | Optical receiver | |
| CN110456453B (en) | Optical communication apparatus, optical communication method, and computer-readable medium | |
| Kawanaka et al. | A dual‐rate burst‐mode receiver with rapid response and high CID tolerance for XGS PON | |
| CN217590817U (en) | Wavelength tunable optical module and optical communication system | |
| CN113721321B (en) | Photon calculating chip | |
| CN210724808U (en) | Half-duplex optical transceiver | |
| CN110233662B (en) | Multichannel receiving optical power monitoring method and device | |
| CN105553557B (en) | Fiber optic communication light receiving unit structure | |
| JP2005354548A (en) | Optical receiver | |
| Lin et al. | To overcome the scalability limitation of passive optical interconnects in datacentres | |
| Kang et al. | Multigigabit CMOS limiting amplifier and VCSEL driver arrays for parallel optical interconnects | |
| CN104410458A (en) | Optical transmitter based on second-order active low-pass filtering circuit | |
| CN114300489A (en) | Photoelectric detector device, design method and wireless optical communication system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |