CN114300489A - Photoelectric detector device, design method and wireless optical communication system - Google Patents

Photoelectric detector device, design method and wireless optical communication system Download PDF

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CN114300489A
CN114300489A CN202111624698.0A CN202111624698A CN114300489A CN 114300489 A CN114300489 A CN 114300489A CN 202111624698 A CN202111624698 A CN 202111624698A CN 114300489 A CN114300489 A CN 114300489A
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parallel
cascade
matrix
resistors
photodiode
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曹珂
朱世程
张启
王家恒
高西奇
孙晨
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Network Communication and Security Zijinshan Laboratory
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Abstract

The invention discloses a photoelectric detector device, a design method and a wireless optical communication system, wherein the photoelectric detector device comprises a photodiode matrix and a plurality of cascade resistors, the photodiode matrix comprises N multiplied by N 'photodiodes, the N photodiodes are connected in parallel to form a 1 multiplied by N parallel PD matrix, the 1 multiplied by N parallel PD matrix is connected in parallel with one cascade resistor, the parallel PD matrixes connected with the N' parallel cascade resistors are connected in series, and two ends of the series cascade resistor are output ends and used for outputting one path of electric signal. The invention can increase the light receiving aperture of the photoelectric detector device, increase the effective light receiving area, improve the light receiving performance and not reduce the bandwidth.

Description

Photoelectric detector device, design method and wireless optical communication system
Technical Field
The invention relates to the technical field of optical communication, in particular to a photoelectric detector device, a design method and a wireless optical communication system.
Background
Currently, in existing wireless communication systems, the wireless spectrum is already in a saturated state, which becomes an extremely valuable resource. Therefore, the development and utilization of new spectrum resources are an inevitable trend in the development of future wireless communication.
Free Space Optical Communications (FSO) is an important component of Wireless Optical communication technology (OWC), and a Wireless laser communication system uses light waves as a carrier for signal transmission to realize high-speed and reliable transmission of information in Space. The wireless optical communication technology overcomes the defect of insufficient frequency spectrum resources of the traditional radio frequency communication, has rich frequency spectrum resources, can provide higher transmission rate, cannot generate electromagnetic radiation, does not interfere with the traditional radio frequency signals, and can be applied to relatively complex electromagnetic environments. Meanwhile, the wireless optical communication technology has the advantages of strong anti-interference capability, good confidentiality, flexible erection, short engineering period and the like, and is widely applied to various fields.
In a wireless optical communication system, a photoelectric detector is used as a receiving end device to convert a received optical signal into a current signal for further processing. Therefore, in the field of wireless optical communication, the active photosensitive area and the bandwidth of the photodetector are important parameters, the photosensitive area determines the aperture and the field of view for receiving light, the smaller the photosensitive area is, the less light can be received, and the weaker the subsequent electric signal is. And the bandwidth determines the rate of the overall communication system. Generally, neither of them is compatible, and increasing the active photosensitive area of the light emitting diode in the photodetector generally reduces its bandwidth.
For a wireless optical communication system, it is particularly important to improve the performance of a receiving end. If the bandwidth performance is not reduced under the condition that the light receiving aperture of the photoelectric detector is increased, the wireless optical communication system can obtain a link budget large enough to realize high-speed transmission, and the system performance is more optimized.
The method for improving the performance of the receiving end comprises the following steps: 1. connecting multiple photodiodes in parallel can increase the photocurrent produced in common, but inevitably increases their capacitance, which, while equates to an increase in active receiving area, reduces the combined bandwidth. 2. An Angle Diversity Receiver (ADR) that deploys multiple photodiodes can produce a larger aperture and wider field of view, but then each photodiode requires a separate preamplifier, increasing not only system complexity and cost, but also system noise.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the defect of small light receiving aperture of a photoelectric detector in the prior art, the invention discloses a photoelectric detector device, a design method and a wireless optical communication system, which increase the light receiving aperture and increase the effective light receiving area.
The technical scheme is as follows: in order to achieve the technical purpose, the invention adopts the following technical scheme:
a photoelectric detector device comprises a photodiode matrix and a plurality of cascade resistors, wherein the photodiode matrix comprises N multiplied by N 'photodiodes, the N photodiodes are connected in parallel to form a 1 multiplied by N parallel PD matrix, the parallel PD matrix is connected in parallel with one cascade resistor, the parallel PD matrixes behind the N' parallel cascade resistors are connected in series, and two ends of the cascade resistors in series are output ends and used for outputting an electric signal all the way.
Further, the number N' of the cascade resistors is not less than the total column number N of the parallel PD matrix, and the resistance of the cascade resistors satisfies the bandwidth compensation condition.
Further, the bandwidth compensation condition is formulated as:
Figure BDA0003438254190000021
wherein R ispIs the resistance value of the cascade resistor; ztThe impedance of a feedback resistor in the amplifying circuit connected with the output end is A, and A is the amplification factor of an operational amplifier in the amplifying circuit.
Further, the photodetector device is packaged on the same chip.
A method of designing a photodetector arrangement, comprising the steps of:
connecting N photodiodes in parallel to form a parallel PD matrix of 1 multiplied by N, and connecting a cascade resistor in parallel;
the parallel PD matrixes after the N' parallel cascade resistors are connected in series;
two ends of the cascade resistor in series connection are output ends for outputting one path of electric signals.
Further, the number N' of the cascade resistors is not less than the total column number N of the parallel PD matrix, and the resistance of the cascade resistors satisfies the bandwidth compensation condition.
Further, the bandwidth compensation condition is formulated as:
Figure BDA0003438254190000022
wherein R ispIs the resistance value of the cascade resistor; ztThe impedance of a feedback resistor in the amplifying circuit connected with the output end is A, and A is the amplification factor of an operational amplifier in the amplifying circuit.
Further, the photodetector device is packaged on the same chip.
A wireless optical communication system, wherein a receiving end in the wireless optical communication system comprises a photodetector apparatus as described in any one of the above.
Has the advantages that: the invention constructs a photodiode matrix which comprises N multiplied by N 'photodiodes, wherein the N photodiodes are connected in parallel to form a 1 multiplied by N parallel PD matrix, and then a cascade resistor is connected in parallel, and the parallel PD matrix after the N' parallel cascade resistors is connected in series; the N multiplied by N' photodiodes are used for increasing the light receiving aperture of the photoelectric detector device, so that the effective light receiving area is increased;
the two ends of the cascade resistor in series connection are output ends for outputting one path of electric signals, and a plurality of paths of electric signals do not need to be output respectively, so that the single-path signal receiving performance is improved, and the design complexity of the circuit is reduced.
Drawings
FIG. 1 is an equivalent circuit diagram of a single photodiode in an embodiment of the present invention;
FIG. 2 is a schematic diagram of a photodiode matrix according to an embodiment of the present invention;
FIG. 3 is an equivalent circuit diagram of a photodiode matrix according to an embodiment of the present invention;
FIG. 4 is a circuit diagram of a transimpedance amplifier circuit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a 2 × 2 photodiode matrix in an embodiment of the invention;
fig. 6 is a schematic diagram comparing the use of a single photodetector as a receiving end with the use of the photodetector arrangement of the present invention as a receiving end.
Detailed Description
The invention is further explained and explained with reference to the drawings and embodiments.
Example 1:
a design method of photoelectric detector device, the photoelectric detector device includes photodiode matrix and several cascade resistors, connect N photodiodes in parallel, form 1 XN parallel PD (photodiode) matrix, connect a cascade resistor in parallel again;
the parallel PD matrixes after the N' parallel cascade resistors are connected in series;
two ends of the cascade resistor in series connection are output ends for outputting one path of electric signals.
Through the design, the light receiving area can be effectively increased, and the light receiving performance is improved.
The outputs of the photodiode matrix are used for connection with an amplification circuit.
The number N' of the cascade resistors is not less than the total column number N of the parallel PD matrix, the resistance value of the cascade resistors meets the bandwidth compensation condition, and the bandwidth compensation condition is related to the impedance and the amplification factor of the feedback resistors in the amplifier circuit. The resistance value of the cascade resistor meets the bandwidth compensation condition, and the formula is expressed as follows:
Figure BDA0003438254190000041
wherein R ispThe resistance value of the cascade resistor is used for compensating the bandwidth loss of the photodiode matrix; ztThe impedance of the feedback resistor in the amplifying circuit is shown, and A is the amplification factor of the operational amplifier in the amplifying circuit.
Through the arrangement, the device is ensured that the effective light receiving area is increased while the bandwidth is not reduced, and the light receiving performance is improved.
In the photoelectric detector device, the parallel PD matrix increases the active area by N times compared with a single PD, but in application, taking a 3dB bandwidth as an example, the parallel PD matrix reduces the bandwidth by N times compared with the single PD, so that bandwidth loss is brought, and the 3dB bandwidth refers to the corresponding frequency bandwidth when the frequency amplitude is equal to twice of a root number of two times of the maximum value; when the resistance value of the cascade resistor meets the bandwidth compensation condition, the bandwidth of the photoelectric detector device is compared with the bandwidth of a single PD
Figure BDA0003438254190000042
The multiple, i.e., N', of cascaded resistors are used to compensate for the bandwidth loss of the photodetector arrangement.
The photoelectric detector device is arranged on the same chip and packaged in a thin TO-46 can, so that the photoelectric detector device is easy TO package and use.
The type of the photodiode is not particularly limited in the present invention.
The invention constructs a photodiode matrix which comprises N multiplied by N 'photodiodes, wherein the N photodiodes are connected in parallel to form a 1 multiplied by N parallel PD matrix, and then a cascade resistor is connected in parallel, and the parallel PD matrix after the N' parallel cascade resistors is connected in series; the N multiplied by N' photodiodes are used for increasing the light receiving aperture of the photoelectric detector device, so that the effective light receiving area is increased;
the two ends of the cascade resistor in series connection are output ends for outputting one path of electric signals, and a plurality of paths of electric signals do not need to be output respectively, so that the single-path signal receiving performance is improved, and the design complexity of the circuit is reduced.
Example 2:
a photoelectric detector device comprises a photodiode matrix and a plurality of cascade resistors, wherein the photodiode matrix comprises N multiplied by N 'photodiodes, the N photodiodes are connected in parallel to form a 1 multiplied by N parallel PD matrix, the parallel PD matrix is connected in parallel with one cascade resistor, the parallel PD matrixes behind the N' parallel cascade resistors are connected in series, and two ends of the cascade resistors in series are output ends and used for outputting an electric signal all the way.
The device can effectively increase the light receiving area and improve the light receiving performance.
Further, the number N' of the cascade resistors is not less than the total column number N of the parallel PD matrix, and the resistance of the cascade resistors satisfies the bandwidth compensation condition.
When the device meets the conditions, the bandwidth is not reduced, the effective light receiving area is increased, and the light receiving performance is improved.
Further, the bandwidth compensation condition is formulated as:
Figure BDA0003438254190000051
wherein R ispIs the resistance value of the cascade resistor; ztThe impedance of a feedback resistor in the amplifying circuit connected with the output end is A, and A is the amplification factor of an operational amplifier in the amplifying circuit.
The equivalent circuit of a single photodiode is shown in FIG. 1, wherein RsRepresenting a series resistance (usually small in value) including the resistance of the wiring connected to the chip pins, CdRepresenting the capacitance of a reverse-biased photodiode, RsAnd CdThe size is related to the device size, structure and applied bias voltage. RdRepresenting the parallel resistance (usually a larger value), consisting of the depletion layer resistances and the leakage resistance, id(t) is the dark current (generally small in value) produced by thermal effects, is(t) is the photocurrent generated by the photodiode after receiving incident light, which is related to the active area of the photodiode, the larger the photocurrent, the larger the active area of the photodiode; i.e. is(t)=Rpd·a·P(t),RpdIs a photodiodeResponsivity, p (t), is the incident optical power, and a represents the scale factor of the optical power reaching the diode active region to the total incident optical power, i.e., the ratio of the optical power received by the photodiode active region to the total incident optical power, is related to the active region area.
In the invention, N photodiodes are connected in parallel to form a 1 XN parallel PD matrix, compared with a single photodiode, the total active area of the 1 XN parallel PD matrix is increased by N times, so that the generated photocurrent is increased, but the capacitance of the 1 XN parallel PD matrix is also increased by N times compared with the single photodiode, so that the bandwidth is reduced by N times. Considering that the parallel connection leads to bandwidth reduction, a serial structure can be introduced to restore the bandwidth. In general, photodiodes cannot be connected in series as an ideal current source. In fact, however, a typical photodiode is not an ideal current source and has a limited parallel resistance, and N 'photodiodes can be connected in series, so that the capacitance of the N' photodiodes connected in series is reduced by N 'times and the bandwidth is increased by N' times compared with the capacitance of a single photodiode, and the generated photocurrent is not increased by the series connection. The combination of the parallel and series placement of the photodiodes described above forms an N x N ' photodiode matrix as shown in fig. 2, preferably integrated on a single chip, wherein the photodiodes are divided into N columns and N ' rows, i.e. N ' stages in series and N stages in parallel.
By repeated application of thevenin and norton's theorem, this photodiode matrix can be represented by the equivalent circuit shown in fig. 3, represented by a current source itot(t) and impedance ztotComposition is carried out;
Figure BDA0003438254190000061
Figure BDA0003438254190000062
wherein N is the parallel series of the photodiode matrix, N' is the series of the photodiode matrix and the number of the cascade resistors, and t is time,idFor dark current, P (t) is incident light power, RpdIs the responsivity of a photodiode, RpIs a cascade resistor for reducing reverse bias voltage unbalance across the photodiodesRepresenting the series resistance, R, of a single photodiode equivalent circuitdParallel resistance, C, representing an equivalent circuit of a single photodiodedIs the capacitance value of the equivalent circuit of a single photodiode, j is an imaginary number, ω is the bandwidth,
Figure BDA0003438254190000063
is an average value of the scale factors of the beam power incident on the (m, n) -th photodiode,
Figure BDA0003438254190000064
amnis the beam power scale factor incident on the (m, n) th photodiode.
In a practical circuit, the photodetector arrangement can be easily applied to a simple transimpedance amplifier circuit as shown in fig. 4, in which case the amplifying circuit employs a transimpedance amplifier circuit.
When ω is 0, the impedance of the overall circuit (including the photodetector device and the transimpedance amplifier circuit) is
Figure BDA0003438254190000071
VOUT(t) is the output voltage of the transimpedance amplifier circuit, and can be characterized as:
Figure BDA0003438254190000072
wherein A is the amplification factor of the operational amplifier in the trans-impedance amplifier circuit, ZtIs the impedance of the feedback resistor in the transimpedance amplifier circuit for adjusting the gain.
When R iss<<RdAt 3dB bandwidth:
Figure BDA0003438254190000073
wherein, ω is-3dBIs a 3dB bandwidth.
In general, let R be assumeds<<RdAnd
Figure BDA0003438254190000074
then omega-3dBExpressed as:
Figure BDA0003438254190000075
if a single light emitting diode is adopted, then:
Figure BDA0003438254190000076
from the above, it follows that, for the bandwidth, when using a matrix of N x N' photodiodes, the 3dB bandwidth of the photodetector arrangement is that of a single photodiode
Figure BDA0003438254190000077
And (4) doubling.
In addition, for the case of using an N × N' photodiode matrix and ignoring dark current, the generated photocurrent is iout(t)≈N·Rpda.P (t) is about N times that of a single photodiode.
If a square matrix is used, i.e. N ═ N', the same bandwidth as a single diode can be achieved, and the effective light-receiving area becomes N2And multiplying, wherein the size of the output signal is N times.
The reverse bias voltage across each photodiode in the photodiode matrix may become unbalanced when the illumination is uneven, even if the photodiodes are assumed to be the same, when the scale factor a ismWhen it is not uniform (a)mM is more than or equal to 1 and less than or equal to N' as a light beam power scale factor of the photodiode in the mth row, and a bias voltage V is applied to the mth rowmAnd the average value
Figure BDA0003438254190000081
The deviation of (d) is given by:
Figure BDA0003438254190000082
where P is the incident light power, VbiasIs the total bias voltage of the photodetector matrix,
Figure BDA0003438254190000083
is the average of the scale factors.
Therefore, when applying this two-dimensional matrix, it is possible to use a cascade resistor RpTo reduce such imbalance under uneven illumination. Provided that R ispIs far greater than
Figure BDA0003438254190000084
The bandwidth of the photodetector arrangement is not significantly affected.
In a wireless optical communication system, in order to reduce the complexity of aligning a light beam at a user end and ensure the mobility of a receiving end, a lens is usually used at the transmitting end to defocus the transmitted light beam to some extent, i.e., the light beam is divergent and not parallel light, and reaches the receiving end after transmission, and the light spot is about 10 cm.
Therefore, for the photoelectric detector device at the receiving end, on the premise of ensuring that the bandwidth is not changed, the absolute light receiving area is effectively increased, the uniformity is ensured, and the link budget of the whole communication system can be greatly improved. The purpose can be achieved by the two-dimensional photodiode matrix (two-dimensional PD matrix) provided in this embodiment, and a schematic diagram of an optical receiver in a wireless optical communication system is shown in fig. 6.
The invention increases the aperture (total active area) and the field of view of the light receiving end without reducing the bandwidth by constructing the photodiode matrix. In addition, compared with a single photoelectric detector, as shown in fig. 6, after the aperture of the light receiving end is increased, the observation range of the light receiving end is wider under the condition that the observation angle is not changed, and the size of the range which can be observed by the light receiving end is indirectly increased, namely the field of view is increased.
The circuit design is reasonably optimized, for example, a square matrix is adopted, namely N-M, M × M matrix can realize the same bandwidth as a single photodiode, and the effective area is M2The output signal is M times. On the basis of not reducing the bandwidth, the active photosensitive area of the receiving end is increased, the output current is increased, and the system performance is improved.
The stronger the receiver performance in a wireless optical communication system, the larger the link budget that can be obtained by the entire communication system to achieve high rate transmission. The invention effectively increases the light receiving area of the receiving end, does not reduce the bandwidth, does not introduce new noise, has low system complexity and can effectively control the cost.
A receiving end in the wireless optical communication system comprises the photoelectric detector device, and the wireless optical communication system comprises an indoor wireless optical communication system and an outdoor long-distance wireless optical communication system.
Example 3:
in this embodiment, a 2 × 2 photodiode matrix is designed, and is composed of 2 1 × 2 photodiode matrices, as shown in fig. 5. The effective area diameter of each photodiode is 100um, and supports 2.5 Gbit/s. Can be interconnected through wire bonding and packaged in a thin TO-46 tank, is flexibly used at the receiving end of a wireless optical system, increases the effective light receiving area without changing the bandwidth and enhances the performance of the receiving end of the system. At this time, the effective light receiving area is increased by 4 times, the output current is increased by 2 times, and the bandwidth is substantially maintained as compared with a single receiving PD. In addition, the whole matrix still keeps one path of signal output, the PD matrix generally used for laser communication in the prior art finally outputs multiple paths of signals, for example, the matrix comprises 8 PDs, and then 8 paths of signals are transmitted respectively. The photodiode matrix of the invention still ensures one-way signal output and improves one-way receiving performance.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.

Claims (9)

1. A photodetector device characterized by: the photoelectric detector comprises a photodiode matrix and a plurality of cascade resistors, wherein the photodiode matrix comprises N multiplied by N 'photodiodes, the N photodiodes are connected in parallel to form a 1 multiplied by N parallel PD matrix, the parallel PD matrices behind the N' parallel cascade resistors are connected in series, and two ends of the cascade resistors in series are output ends and are used for outputting one path of electric signals.
2. A photodetector arrangement according to claim 1, characterized in that: the number N' of the cascade resistors is not less than the total column number N of the parallel PD matrix, and the resistance value of the cascade resistors meets the bandwidth compensation condition.
3. A photodetector arrangement according to claim 2, characterized in that: the bandwidth compensation condition is expressed by the formula:
Figure FDA0003438254180000011
wherein R ispIs the resistance value of the cascade resistor; ztThe impedance of a feedback resistor in the amplifying circuit connected with the output end is A, and A is the amplification factor of an operational amplifier in the amplifying circuit.
4. A photodetector arrangement according to claim 1, characterized in that: the photoelectric detector device is packaged on the same chip.
5. A method of designing a photodetector arrangement, comprising the steps of:
connecting N photodiodes in parallel to form a parallel PD matrix of 1 multiplied by N, and connecting a cascade resistor in parallel;
the parallel PD matrixes after the N' parallel cascade resistors are connected in series;
the two ends of the cascade resistor in series connection are output ends and are used for outputting one path of electric signal.
6. A method of designing a photodetector arrangement as claimed in claim 5, characterized by: the number N' of the cascade resistors is not less than the total column number N of the parallel PD matrix, and the resistance value of the cascade resistors meets the bandwidth compensation condition.
7. The method of claim 6, wherein: the bandwidth compensation condition is expressed by the formula:
Figure FDA0003438254180000012
wherein R ispIs the resistance value of the cascade resistor; ztThe impedance of a feedback resistor in the amplifying circuit connected with the output end is A, and A is the amplification factor of an operational amplifier in the amplifying circuit.
8. A method of designing a photodetector arrangement as claimed in claim 5, characterized by: the photoelectric detector device is packaged on the same chip.
9. A wireless optical communication system, characterized in that: a receiving end in a wireless optical communication system comprising a photodetector apparatus as claimed in any one of claims 1 to 4.
CN202111624698.0A 2021-12-28 2021-12-28 Photoelectric detector device, design method and wireless optical communication system Pending CN114300489A (en)

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