CN109883558B - Device and method for measuring avalanche signal of avalanche photodiode - Google Patents
Device and method for measuring avalanche signal of avalanche photodiode Download PDFInfo
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- CN109883558B CN109883558B CN201910204497.1A CN201910204497A CN109883558B CN 109883558 B CN109883558 B CN 109883558B CN 201910204497 A CN201910204497 A CN 201910204497A CN 109883558 B CN109883558 B CN 109883558B
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Abstract
The invention discloses a device for measuring an avalanche signal of an avalanche photodiode, which comprises: a first resistor, one end of which receives a DC bias voltage; the cathode of the avalanche photodiode is connected with the other end of the first resistor; a first capacitor, one end of which receives a pulse voltage and the other end of which is connected with the cathode of the avalanche photodiode; a second capacitor connected between an anode of the avalanche photodiode and ground; and a second resistor connected in parallel with the second capacitor between an anode of the avalanche photodiode and a ground terminal.
Description
Technical Field
The invention relates to the technical field of quantum communication. More particularly, the present invention relates to an apparatus and method for measuring an avalanche signal of an avalanche photodiode.
Background
The single photon detection technology has wide application in the fields of quantum key distribution systems, high-resolution spectral measurement, nondestructive substance analysis, high-speed phenomenon detection, precision analysis, atmospheric pollution measurement, bioluminescence, radiation detection, high-energy physics, astronomical photometry, optical time domain reflection and the like.
Among the single photon detection implementations, the most common ones are those that employ Avalanche Photodiodes (APDs) as the detection device. As the operating voltage of an APD approaches the avalanche breakdown voltage gradually, the avalanche multiplication factor M theoretically tends to infinity. In practice, however, when the operating voltage is less than the avalanche breakdown voltage, the avalanche multiplication factor M is saturated to around 1000. Only in the geiger mode, i.e., when the APD operating voltage is above the avalanche breakdown voltage, the avalanche multiplication factor M can be large enough to produce a macroscopic pulse for single photon discrimination. In the geiger mode, a photon must be stopped after it triggers an avalanche, otherwise the avalanche continues and the detector cannot receive the next photon. There are three main methods for suppressing avalanche current: passive inhibition mode, active inhibition mode, and gated inhibition mode. The current-general approach suppresses avalanche with gating mode.
The basic principle of the gating mode is shown in fig. 1, in which a dc bias voltage HV (smaller than the avalanche voltage of the APD) is applied to the APD, and then a gate voltage having a magnitude larger than the avalanche voltage of the APD is applied to the APD through a coupling capacitor Cs based on the dc bias voltage HV. Under the condition, after the leading edge of the gate arrives, the voltage at two ends of the APD is greater than the avalanche voltage, the APD is in a detection photon mode, and the APD can respond to photons and generate an avalanche signal; after the gate trailing edge, the voltage across the APD is lower than the avalanche voltage, which suppresses avalanche and does not respond to photons, and does not avalanche even if the optical signal arrives. Periodically, the next gate pulse can make the APD enter into a single photon detection mode. The advantage of using gate quenching is that the signal photons can be synchronized with the gate pulses, and when a photon arrives, the gate pulse is applied and the APD begins to respond, thus greatly reducing the dark count rate.
The gating pattern works well to reduce dark count and suppress post-pulse problems, but since the high-speed gating pulses are capacitively coupled to the load resistor through the junction of the APD, positive and negative electrical spikes are generated at the rising and falling edges of the gating pulses, respectively. Fig. 2 shows the differential effect of the capacitance. When detecting single photons by means of gate pulse quenching, because the leading edge and the trailing edge of the gate pulse are short (usually about 1ns), and the APD itself has capacitance, when a narrow gate pulse is applied to the APD, a strong spike noise is generated, the amplitude of the noise is far larger than that of the avalanche signal, and the avalanche signal is completely submerged.
In order to eliminate the influence of the gating noise, a number of schemes have been proposed by those skilled in the art, mainly: double balancing methods, capacitance balancing methods, self-differential balancing methods, integral gating methods, and the like.
The essence of several balancing methods is to find a reference signal similar to the spike noise for subtraction to extract the avalanche signal. Fig. 3 shows a waveform diagram of an avalanche signal of an avalanche photodiode measured by a balance method (see "InGaAs _ InPAPD based high-speed single photon detection method and application", doctor thesis of university of east china, beam flame). As shown in fig. 3, the two signal waveforms in the first row are the signals received from the anode of the avalanche photodiode, the waveform diagram in the second row is the photon-free reference signal, which is usually generated by the matching circuit without photon illumination, and the waveform diagram in the third row is the matching result, which is usually obtained by subtracting the received signal from the reference signal, and shows the signal waveforms with or without avalanche occurrence.
In general, in order to effectively extract the avalanche signal, the spike signal needs to be suppressed below-20 dB, which is very difficult to realize. To achieve this goal, each instrument usually needs to be carefully and manually fine-tuned (because the stray parameters of each instrument are different), which causes great difficulties in mass production. Fig. 4 is a typical example of the balancing method. The differential arithmetic unit and the pulse discriminator are sequentially connected with the anode of the APD.
The integration gating method is to accumulate avalanche current to realize measurement of avalanche charge Q, and is specifically realized by integrating the avalanche current with a capacitor, and then measuring the voltage at two ends of the capacitor by using a relationship Q CU. After the avalanche is finished, the voltage U at the two ends of the capacitor is a state quantity, so that the spike noise can be staggered in the measurement time, and the influence of the spike noise is avoided.
By the circuit shown in fig. 5, the measurement of the transient signal is converted into the measurement of the state signal, so that the measurement difficulty is reduced, and the influence of the stray parameter is avoided.
During the detection, the avalanche current is accumulated through the second capacitor CL, so as to obtain a state voltage signal. If there is no avalanche, the charge accumulated across the second capacitor CL is 0, and according to Q ═ CU, the voltage difference across the capacitor is 0; if there is an avalanche, the second capacitor CL integrates the avalanche current, and there is a significant voltage difference across it. After the spike noise is over, the pressure difference at the two ends of the second capacitor CL is directly measured, and the existence of avalanche can be judged. It can be seen that this approach can avoid the effects of spike noise.
When the measurement is completed, the second capacitor CL can be discharged through the switch SW in preparation for the next measurement.
With the integral gating method, although the spike problem is solved, the switch itself brings new noise, and it is obvious from fig. 6 that the noise brought by the switch is very large. This is caused by the charge injection effect and the charge oscillation, although the method disclosed in chinese patent CN105043563 reduces the charge injection effect, the problem of charge oscillation still exists, and in addition, an external auxiliary light source is required, the system is extremely complex, and the cost is very high.
From the above, it can be seen that the balanced detection method is to measure the pulse signals at both ends of the resistor RL, but needs to generate a good reference signal for subtraction to eliminate the influence of spike noise; the integral gating method measures the voltage signal across capacitor CL, but requires a discharge switch. These two approaches each have advantages and disadvantages: the working frequency of the balance mode is high, but the balance signal is generated very complicatedly and is greatly influenced by stray parameters, so that the large-scale production cannot be realized; the integration gating mode is simple to extract avalanche signals, but new noise is introduced into the discharge switch, and in addition, the working frequency is low.
Disclosure of Invention
In view of the above problems occurring in the prior art, according to an aspect of the present invention, there is provided an apparatus for measuring an avalanche signal of an avalanche photodiode, including:
a first resistor, one end of which receives a DC bias voltage;
the cathode of the avalanche photodiode is connected with the other end of the first resistor;
a first capacitor, one end of which receives a pulse voltage and the other end of which is connected with the cathode of the avalanche photodiode;
a second capacitor connected between an anode of the avalanche photodiode and ground; and
a second resistor connected in parallel with the second capacitor between an anode of the avalanche photodiode and ground.
In one embodiment of the present invention, the discharge time of the second capacitor CL and the second resistor RL is longer than the width of the pulse voltage.
In one embodiment of the invention, the first resistance is 20k Ω.
In one embodiment of the invention, said first capacitance is 200 pF.
In one embodiment of the invention, the second resistance is 100 Ω.
In one embodiment of the invention, said second capacitance is 15 pF.
According to another aspect of the present invention, there is provided a method of measuring an avalanche signal of an avalanche photodiode, comprising:
applying a dc bias voltage to an avalanche photodiode, the dc bias voltage being less than an avalanche voltage of the avalanche photodiode;
coupling a pulsed voltage to a cathode of the avalanche photodiode APD through a first capacitance Cs;
when an optical signal reaches the avalanche photodiode, the bias voltage of the avalanche photodiode reaches a value above the avalanche voltage, and the avalanche photodiode absorbs a photon to form an avalanche current;
the avalanche current is connected in parallel with a loop through a second capacitor CL and a second resistor RL, so that on one hand, the avalanche current is accumulated on the second capacitor CL, and on the other hand, the avalanche current is discharged through the second resistor RL; and
the signal waveform at the output is measured.
In another embodiment of the present invention, when no optical signal reaches the avalanche photodiode, the waveform of the signal at the output terminal is a spike noise waveform.
In another embodiment of the present invention, when the optical signal reaches the avalanche photodiode, the signal waveform at the output terminal is an RC discharge waveform.
In another embodiment of the present invention, the discharge time of the second capacitor CL and the second resistor RL is longer than the width of the pulse voltage.
In this scheme, when no avalanche occurs, the voltage waveform at both ends of CL is spike noise, and there are upper and lower spikes as well as the signals at both ends of RL in the balanced manner, see fig. 3 and 8; when avalanche occurs, the waveform changes significantly, and the voltage across the capacitor cannot change suddenly, so that the lower peak is flattened or even disappears, as shown in fig. 9. Meanwhile, since RL is a passive element, the circuit has no charge injection effect, and the system operating frequency is determined only by the discharge time of CL, which is RL × CL.
Drawings
To further clarify the above and other advantages and features of embodiments of the present invention, a more particular description of embodiments of the invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.
Figure 1 shows a circuit schematic of a prior art gated mode single photon detector.
Fig. 2 shows the differential effect of the capacitance.
Fig. 3 shows a waveform diagram of an avalanche signal of an avalanche photodiode measured by a balance method.
Fig. 4 shows a circuit schematic for measuring the avalanche signal of an avalanche photodiode by the equilibrium method.
Figure 5 shows a circuit schematic of a gated mode single photon detector 300 employing capacitive accumulation of avalanche current.
Fig. 6 shows a waveform diagram of an avalanche signal of an avalanche photodiode measured by the integration gating method.
Figure 7 shows a circuit schematic of a gated mode single photon detector 700 employing capacitive accumulation of avalanche current according to one embodiment of the present invention.
Fig. 8 shows waveforms of voltage signals at both ends of CL and RL when avalanche does not occur in the avalanche photodiode APD.
Fig. 9 shows waveforms of voltage signals at both ends of CL and RL when avalanche occurs in the avalanche photodiode APD.
Figure 10 shows a flow diagram of a method for photon detection using single photon detector 700 according to one embodiment of the invention.
Detailed Description
In the following description, the invention is described with reference to various embodiments. One skilled in the relevant art will recognize, however, that the embodiments may be practiced without one or more of the specific details, or with other alternative and/or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of embodiments of the invention. Similarly, for purposes of explanation, specific numbers, materials and configurations are set forth in order to provide a thorough understanding of the embodiments of the invention. However, the invention may be practiced without specific details. Further, it should be understood that the embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.
Reference in the specification to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.
Aiming at the problems in the prior art, the invention provides an improved gating mode single-photon detector. Figure 7 shows a circuit schematic of a gated mode single photon detector 700 employing capacitive accumulation of avalanche current according to one embodiment of the present invention.
As shown in fig. 7, the dc bias unit is connected to the cathode of the avalanche photodiode APD through a first resistor Rs, the pulse generator is connected to the cathode of the avalanche photodiode APD through a first capacitor Cs, the anode of the avalanche photodiode APD is grounded through a second capacitor CL, and a second resistor RL connected in parallel to the second capacitor CL is provided between the anode of the avalanche photodiode APD and the ground.
The second capacitor CL and the second resistor RL which are connected in parallel with the cathode of the avalanche photodiode APD widen the transient avalanche voltage signal of the APD, so that the width of the avalanche signal is slightly larger than the width of peak noise, and the obvious difference between waveforms of the avalanche signal and the avalanche signal under the two conditions is realized, thereby solving the influence of the peak noise and realizing the effective measurement of the avalanche signal of the APD.
In contrast to the circuit shown in fig. 5, the second switch is omitted from the measurement circuit in the embodiment shown in fig. 7, thereby avoiding noise introduced by the second switch.
In the detection process, the negative pulse discriminator is connected with an APD anode of the avalanche photodiode.
The second capacitor CL and the second resistor RL form an RC circuit which is connected with the anode of the avalanche photodiode APD. If there is no avalanche, the signals across the second capacitor CL and the second resistor RL are as shown in FIG. 8 below. Fig. 8 shows waveforms of voltage signals at both ends of CL and RL when avalanche does not occur in the avalanche photodiode APD. It can be seen from fig. 8 that the signal across CL without avalanche is a typical differential signal, i.e. the system output is typically spike noise.
When avalanche occurs, avalanche current passes through a parallel loop of the second capacitor CL and the second resistor RL, energy is accumulated on the one hand on the second capacitor CL, and energy is discharged on the other hand through the second resistor RL. The waveform at the output is shown in fig. 9. The upper curve 610 in fig. 9 represents the trigger pulse signal; curve 620 shows the voltage signal waveform across CL and RL when avalanche occurs in avalanche photodiode APD. As can be seen from fig. 9, the signal waveform resembles a typical RC discharge waveform. The width of the trigger signal is 1ns and is applied to the first capacitance Cs.
From the output waveforms shown in fig. 8 and 9, the waveforms at both ends of the second capacitor CL when the APD is discharged and when it is not discharged are greatly different, and it is easy to determine whether avalanche occurs. The negative peak can be flattened as long as the discharge time of the second capacitor CL and the second resistor RL is ensured to be slightly larger than the width of the gate pulse, so that the avalanche detection can be realized by a method for screening the negative pulse, and the influence of peak noise is avoided. The novel switching noise is not introduced, the working frequency of the detector is high, and in addition, the system structure is extremely simple and the cost is low.
In a specific embodiment of the present invention, the first capacitor Cs is 200pF, the first resistor Rs is 20k Ω, the second capacitor CL is 15pF, and the second resistor RL is 100 Ω. When the width of the trigger pulse signal is 1ns, the discharge time of the second capacitor CL and the second resistor RL is τ RL CL 1500ps 1.5 ns. The discharge time is slightly longer than the width of the gate pulse, the negative peak disappears, and the existence of avalanche is easily judged by screening the negative pulse.
The negative pulse discriminator is used to detect a negative spike in the signal waveform at the anode of the avalanche photodiode APD. In a measurement period, when avalanche breakdown occurs in the avalanche photodiode APD, because the discharge time of the second capacitor CL and the second resistor RL is longer than the width of the gate pulse, the negative peak is flattened, so that the negative peak cannot be detected by the negative pulse discriminator, and the photon input is determined; when no avalanche breakdown occurs within the avalanche photodiode APD, there is a negative spike in the signal waveform, so the negative spike is detected by the negative pulse discriminator, thereby determining that there is no photon input.
Compared with the existing circuit for measuring the avalanche signal of the avalanche photodiode by a balance method, the gated mode single photon detector disclosed by the invention does not need to utilize a reference signal to eliminate peak noise, removes a complex reference signal generating circuit and has a simple structure. By connecting an RC circuit at the anode of an avalanche photodiode APD, when avalanche occurs, a signal waveform is similar to a typical RC discharge waveform without negative spikes; and without avalanches, typical spike noise is output. Whether avalanche occurs can be determined only by detecting the negative spike through the negative pulse discriminator.
Compared with the existing circuit for measuring the avalanche signal of the avalanche photodiode by the integral gating method, the gating mode single photon detector disclosed by the invention does not need a switch to discharge an integral capacitor. Thus, noise caused by the discharge switch itself can be avoided. In addition, the existing integral gating method needs to add a complex external circuit to perform switching control on the discharge switch, and the cost is very high. The gated mode single photon detector disclosed by the invention does not need an additional control system, finishes the detection process of multiple periods by connecting the negative pulse discriminator at the APD anode of the avalanche photodiode, and has high working frequency and simple structure.
Figure 10 shows a flow diagram of a method for photon detection using single photon detector 700 according to one embodiment of the invention.
At step 710, a dc bias voltage HV is applied to the avalanche photodiode APD, the dc bias voltage HV being less than an avalanche voltage of the APD.
In step 720, the gated pulse voltage from the pulse generator is coupled to the cathode of the avalanche photodiode APD through the first capacitance Cs in synchronization with the input optical pulse.
At step 730, when the optical signal arrives, the bias voltage of the avalanche photodiode APD reaches above the avalanche voltage, and the avalanche photodiode APD absorbs a photon to form an avalanche current.
In step 740, the avalanche current is looped through the parallel connection of the second capacitor CL and the second resistor RL, on the one hand, is accumulated on the second capacitor CL, and on the other hand, is discharged through the second resistor RL.
In step 750, the signal waveform at the output is measured. Because the discharge time of the second capacitor CL and the second resistor RL is slightly longer than the width of the gate pulse, the influence of spike noise can be eliminated, and the effective measurement of the avalanche signal is realized. A negative spike in the signal waveform at the anode of the avalanche photodiode APD is detected by a pulse discriminator. In a measurement period, when avalanche breakdown occurs in the avalanche photodiode APD, because the discharge time of the second capacitor CL and the second resistor RL is longer than the width of the gate pulse, the negative peak is flattened, so that the negative peak cannot be detected by the negative pulse discriminator, and the photon input is determined; when no avalanche breakdown occurs within the avalanche photodiode APD, there is a negative spike in the signal waveform, so the negative spike is detected by the negative pulse discriminator, thereby determining that there is no photon input.
While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention disclosed herein should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
Claims (8)
1. An apparatus for measuring an avalanche signal of an avalanche photodiode, comprising:
a first resistor, one end of which receives a DC bias voltage;
the cathode of the avalanche photodiode is connected with the other end of the first resistor;
a first capacitor, one end of which receives a pulse voltage and the other end of which is connected with the cathode of the avalanche photodiode;
a second capacitor connected between an anode of the avalanche photodiode and ground; and
a second resistor connected in parallel with the second capacitor between an anode of the avalanche photodiode and a ground terminal,
wherein the discharge time of the second capacitor and the second resistor is larger than the width of the pulse voltage.
2. The apparatus for measuring an avalanche signal of an avalanche photodiode of claim 1 wherein the first resistance is 20k Ω.
3. The apparatus for measuring an avalanche signal of an avalanche photodiode of claim 1 wherein the first capacitance is 200 pF.
4. The apparatus for measuring an avalanche signal of an avalanche photodiode of claim 1, wherein the second resistance is 100 Ω.
5. The apparatus for measuring an avalanche signal of an avalanche photodiode of claim 1 wherein said second capacitance is 15 pF.
6. A method of measuring an avalanche signal of an avalanche photodiode, comprising:
applying a dc bias voltage to an avalanche photodiode, the dc bias voltage being less than an avalanche voltage of the avalanche photodiode;
coupling a pulsed voltage to a cathode of the avalanche photodiode APD through a first capacitance Cs;
when an optical signal reaches the avalanche photodiode, the bias voltage of the avalanche photodiode reaches a value above the avalanche voltage, and the avalanche photodiode absorbs a photon to form an avalanche current;
the avalanche current is connected in parallel through a second capacitor CL and a second resistor RL, on one hand, the avalanche current is accumulated on the second capacitor CL, on the other hand, the avalanche current is discharged through the second resistor RL, and the discharge time of the second capacitor CL and the second resistor RL is longer than the width of the pulse voltage; and
the signal waveform at the output is measured.
7. The method of claim 6, wherein the waveform of the signal at the output is a spike noise waveform when no optical signal reaches the avalanche photodiode.
8. The method of claim 6, wherein the signal waveform at the output is an RC discharge waveform when the optical signal reaches the avalanche photodiode.
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| CN100363724C (en) * | 2004-02-24 | 2008-01-23 | 华东师范大学 | Double-gate-control avalanche photodiode signle photonic detection method |
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