CN100363724C - Double-gate-control avalanche photodiode signle photonic detection method - Google Patents
Double-gate-control avalanche photodiode signle photonic detection method Download PDFInfo
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- CN100363724C CN100363724C CNB200410016502XA CN200410016502A CN100363724C CN 100363724 C CN100363724 C CN 100363724C CN B200410016502X A CNB200410016502X A CN B200410016502XA CN 200410016502 A CN200410016502 A CN 200410016502A CN 100363724 C CN100363724 C CN 100363724C
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Abstract
The present invention belongs to the class of confidential communication and particularly relates to a method for detecting single photons of a double-gate-control avalanche photodiode, and a reverse voltage gate and a detecting gate of the avalanche photodiode are separated. The method separates differential signals of a front edge and a rear edge of a gate bias voltage by using the wider gate bias voltage from an avalanche signal, namely that the avalanche signal is far from peaks so that the signals are easily captured when the single photons are detected. The present invention has the advantages that the gate bias voltage does not overlap with photon signals, and the avalanche signal is far from the peaks of the front edge and the rear edge of the gate bias voltage; the present invention also has the advantages of easily captured signals, insensitivity to environmental change, stable operation and low cost; under the condition that photon arrival time changes slightly, only the gates need scanning and detecting without changing the working frequency of the pulsed bias voltage of an APD (Avalanche Photo Diode); thus, the working stability is greatly improved.
Description
Technical field
The present invention relates to the secure communication class, relate to the two-door control avalanche photodide single photon detection method that a kind of reverse voltage door separates with detection door concretely.
Background technology
Avalanche photo diode (APD) is the current active parts that is used for single photon detection.When work, the APD two ends add reverse high voltage Vr, make Vr a little more than avalanche point voltage V
B, just enter the Geiger mode of operation, that is, avalanche breakdown just takes place in APD when photon incident, produces avalanche current, thereby can detect faint single photon signal.At the bigger characteristics of APD dark noise (dark noise), especially for the InGaAs avalanche photodide of optical communicating waveband (1310,1550 nanometer), can adopt gate pattern (Gatemode) in actual the use, that is, make reverse voltage Vr a little less than avalanche point voltage V
B, only when photon arrived, just boosted voltage made Vr＞V
B, form a very narrow pulse " door ", only survey the signal in " door ".In theory, the probability that detects noise is along with gate-width reduces, but in the existing scheme, the reverse biased door is exactly a detection door, and the reducing of detection door also caused reducing of biased door.And because the differential action of APD junction capacity, the forward position (rising edge) of door bias voltage can produce spike, the door bias voltage is narrow, avalanche signal will overlap with spike, be that gate pulse and avalanche signal overlap, be difficult to separate, the subsequent conditioning circuit complexity, the present way of normally using relatively or compensating is with spike and Signal Separation.Simple gate control pattern as shown in Figure 1, this pattern are only used a gate bias voltage V
p, for reducing noise, V
pPulse width must be at nanosecond order, generally all less than 1 nanosecond, thereby output has only a signal, causes avalanche signal and V
pPulse is overlapping by the differential signal (seeing the solid line spike among Fig. 1) that the APD junction capacity forms, be difficult to distinguish, the scheme of some present prior aries is all put forth effort on overlapping Signal Separation, therefore there is following shortcoming in above-mentioned prior art: (1) circuit is realized complicated, the scheme of most of separation signals depends on the accurate benefit of APD junction capacity and tastes, and has caused the instability of system to increase; (2) benefit is tasted technology to the environmental change sensitivity, to the shielding requirements height, increases cost; (3) situation of subtle change is arranged time of arrival for photon, simple gate prosecutor case just must be come lock-on signal by the scanning impulse bias voltage, and makes like this and can cause avalanche point that subtle change is arranged because of the frequency of operation of change APD, thereby influences its job stability.
Summary of the invention
The objective of the invention is weak point according to the said goods, a kind of detection method of two-door control avalanche photodide single photon has been proposed, this method is by using the door bias voltage of broad, make the differential signal of door bias voltage before and after edge separate with avalanche signal, be avalanche signal away from spike, thereby signal is easy to be hunted down when single photon detection.
To achieve these goals, the present invention has adopted following technical scheme:
The present invention at first provides a stable bias voltage by a current-limiting resistance of connecting with avalanche photodide APD for APD with a dc high voltage source, this voltage is a little less than avalanche point voltage, this moment, avalanche photodide was not worked, when photon arrives, the pulse power passes through a coupling capacitance with an enough wide pulse voltage, be loaded into the negative electrode of avalanche photodide, and superpose with former bias voltage, make at pulse voltage valid period bias voltage greater than avalanche point voltage (promptly be in leather and cover state), avalanche diode unlatching work, form " door bias voltage ", because there is junction capacity in it, before the door bias voltage, the back is along will cause one positive one negative spiking in output signal, mild zone between the positive undershoot is exactly the time period that can be used for catching the photon avalanche signal, in this zone, the spike that the forward position produced and the avalanche signal of door bias voltage can be not overlapping, so, avalanche signal is that photon signal has separated effectively with gate pulse, and then just photon signal can be taken out by a very narrow sampling detection door.
An above-mentioned enough wide pulse voltage refer to can guarantee this bias pulse forward position (rising edge) and the back along (negative edge) pairing spike be that avalanche signal effectively separates in time with photon signal so that can by one independently detection door (exemplary circuit is seen Fig. 5) spike is separated with avalanche signal.But too wide pulse gate will cause the bias voltage amplitude to descend obviously owing to the effect of coupling capacitance, so pulse width should be suitable, and representative value is 50-200ns, 5.000 ± 0.005v.
Advantage of the present invention is, door bias voltage and photon signal are not overlapping, avalanche signal is easy to lock-on signal away from the spike of door bias voltage before and after edge, and is insensitive to environmental change, working stability, cost is low, has under the situation of subtle change time of arrival for photon, only needs the scanning probe door, and need not change the frequency of operation of APD pulsed bias, improved job stability greatly.
Summary of drawings
Accompanying drawing 2 is two-door control circuit principle of technical solution of the present invention and waveform synoptic diagram;
The accompanying drawing 4 for a change relative position of detection door is used for detection to photon minor alteration time of arrival;
(1) photon fixing waveform synoptic diagram time of arrival;
(2) can realize scanning probe waveform synoptic diagram by changing detection door with a time-delay td in bias voltage forward position;
(3) a plurality of detection doors have fixed time of arrival with detection multipath light signal waveform synoptic diagram is set in the door bias voltage;
Accompanying drawing 5 is the two-door control of the present invention APD single-photon avalanche signal Processing schematic diagram;
Accompanying drawing 6 is handled sequential chart for the two-door control of the present invention APD avalanche signal;
Accompanying drawing 7 is an embodiment of the invention synoptic diagram;
Accompanying drawing 8 detection doors are controlled synoptic diagram with the time-delay in door bias voltage forward position;
Accompanying drawing 9 is the scheme synoptic diagram by the many detection doors of a plurality of controlled chronotrons generation in parallel;
Concrete technical scheme
Feature of the present invention and other correlated characteristic are described in further detail by example below in conjunction with accompanying drawing, so that technician's of the same trade understanding:
Shown in Fig. 2-9, present embodiment is that a kind of reverse voltage Vr door gate1 separates " two-door control " APD mode of operation with detection door gate2, (in the ultrared single-photon detector that InGaAs APD constitutes) gate bias voltage (gate1) separates gate1＞gate2 with detection door (gate2).
The method that present embodiment adopted as shown in Figure 2, dotted line left side with prior art simple gate control pattern as Fig. 1.At first with one a little less than avalanche point voltage V
BHigh direct voltage V
DCBy a current-limiting resistance R who connects with avalanche photodide APD
LFor APD provides a stable bias voltage Vr, this voltage is a little less than avalanche point voltage V
B, this moment, snowslide did not take place, Vr ≈ V in APD
DCWhen photon arrived, gate bias voltage gate1 was by coupling capacitance C, and the pulse voltage with enough wide (being wider than the snowslide rising edge of a pulse) obtains the pulse waveform shown in Fig. 2 top right plot, crest voltage V at the APD negative electrode
pGreater than avalanche point voltage V
B, therefore, the duration of gating pulse, as long as photon incident is arranged, snowslide just can take place.The bottom-right graph of Fig. 2 shows the waveform that obtains on output resistance Rs, can see, the front and back of gating pulse are along respectively corresponding positive and negative spike pulse, this is because the junction capacity of APD has played the differential action to gating pulse and caused, the spike of dotted line is represented the snowslide pulse signal among the figure, so avalanche signal has separated effectively with gate pulse.And then just photon signal can be taken out by a very narrow sampling detection door, as the gate2 of Fig. 3, circuit is realized the left figure of part corresponding to Fig. 2.
An above-mentioned enough wide pulse voltage refers to the pulse voltage of 50-200ns, 5.000 ± 0.005v.
Present embodiment is when carrying out single photon detection, at first synchronizing signal is controlled single photon emission as shown in Figure 7, trigger APD door bias voltage simultaneously, when photon arrives, gate bias voltage gate1 is added to the APD negative electrode, the duration of gating pulse by coupling capacitance C, as long as photon incident is arranged, snowslide just can take place.Can see that the front and back of gating pulse are along respectively corresponding positive and negative spike pulse, this is because the junction capacity of APD has played the differential action to gating pulse causes.Controlled chronotron is a benchmark with the forward position of door bias voltage, be deferred to the time that light pulse arrives, produce narrower TTL pulse (＜5 nanoseconds, it is narrow more that then to reduce anti noise good more, but be subjected to the restriction of device performance), this pulse then offers the data terminal (D end) of d type flip flop (as 74AS74).According to the function of d type flip flop, the corresponding data-signal constantly of the rising edge of time clock (CP end) will be removed, by Q end output (Q-is an inversion signal).As can be seen, " signal " waveform has become two continuous TTL pulses after passing through " shaping amplification ", wherein, previous is that forward position spike by the door bias voltage causes, thereby occurs all the time, but it is in time away from " detection door " pulse, therefore the data-signal (D end) of its rising edge correspondence is low level all the time, played " zero clearing " effect, pulse is then obtained after shaping by the photon avalanche signal, has only when detecting photon, just can occur, dot; Its rising edge only has the CP rising edge in time over against detection door central authorities during detection door, the Q output terminal just can be exported high level, so the height of Q output signal has been represented having or not of light signal.
The principle of the signal Processing of present embodiment as shown in Figure 5, a controlled chronotron is removed to trigger as synchronizing signal in the forward position of gating pulse, delay time to the photon due in (incident photon in the door bias voltage, rear portion arrive) drive detection door and produce circuit, open narrow detection door (＜5 nanoseconds, the TTL pulse), this detection door offers the rising edge of the data terminal (D end) of d type flip flop in order to capture clock pulse (CP end); Avalanche signal from APD output then passes through amplification and rectification circuit, the spike and the avalanche signal of door bias voltage rising edge two TTL pulses that are close to have been become, deliver to the CP end, and the TTL pulse front edge that has only the avalanche signal correspondence is in detection door inside, so data-signal will be removed, by Q end output (Q-is an inversion signal).
The sequential chart of the signal Processing of present embodiment as shown in Figure 6, at the detection door signal of the data terminal (D end) of d type flip flop, it is synchronized with photon time of arrival and periodically occurs.And CP end connects is signal after being amplified by the APD output Shaping, is made up of a preamble pulse and an avalanche signal, and wherein the preamble pulse correspondence the forward position spike of door bias voltage, so appearance is all the time represented with solid line; And avalanche signal only just occurs when detecting photon, dots.Principle of work according to d type flip flop, the rising edge of a pulse of CP end will be taken a sample to the level value of D end, and by the output of Q end, thereby the effect of preamble pulse is Q to be held clear 0, and the pulse of avalanche signal has determined the level state (high level represents that photon signal is arranged) of Q end (detector output terminal just).
The detection to photon minor alteration time of arrival just can be realized in the position that the present invention does not change a bias voltage, and this is highly significant for application scenario of surveying the single photon optical path difference.
Detection door gate2 of the present invention can scan in the time at gate bias voltage gate1, thereby detection time can be finely tuned.Detection door is controlled with the time-delay in door bias voltage forward position as shown in Figure 8: the forward position of door bias voltage is triggered controlled chronotron and is produced a time-delay t
d, at t
dAfter time, " detection door generation " circuit produces a detection door and is used to catch corresponding photon avalanche signal, because the amount of delay of controlled chronotron is adjustable, can realize that the scanning of detection door in the door bias voltage sees Fig. 4 (2).
The present invention in the detection door gate1 time, can place a plurality of detection doors (gate21 gate22gate23 ...).As shown in Figure 9 by a plurality of controlled chronotrons scheme that produces many detection doors in parallel: the controlled chronotron that a plurality of parallel connections are triggered in the forward position of door bias voltage produces multichannel time-delay t
D1, t
D2... t
Dn, after each time-delay finished, " detection door generations " circuit all can produce the photon avalanche signal that a detection door is used to catch correspondence and see Fig. 4 (3).But because a door bias voltage only can respond a snowslide, thereby this scheme only is applicable to that a photon incident is only arranged at every turn, and a plurality of occasions that reach the time are arranged.
Claims (8)
1. two-door control avalanche photodide single photon detection method, it is characterized in that this method is at first to provide a stable bias voltage by a current-limiting resistance of connecting with avalanche photodide APD for APD with a dc high voltage source, this voltage is a little less than avalanche point voltage, when photon arrives, the pulse power passes through a coupling capacitance with an enough wide pulse voltage, be loaded into the negative electrode of avalanche photodide, and superpose with former bias voltage, make at pulse voltage valid period bias voltage greater than avalanche point voltage, promptly be in leather and cover state, avalanche diode unlatching work, form gate bias voltage gate1, before the gate bias voltage gate1, the back is along will cause one positive one negative spiking in output signal, and the mild zone between the positive undershoot is exactly the time period that is used to catch the photon avalanche signal, by a very narrow sampling detection door gate2 photon signal is taken out in this zone again.
2. a kind of two-door control avalanche photodide single photon detection method according to claim 1 is characterized in that described gate bias voltage gate1 is wider than detection door gate2.
3. a kind of two-door control avalanche photodide single photon detection method according to claim 1, it is characterized in that described enough wide pulse voltage refer to can guarantee this bias pulse forward position be rising edge with the back along being that the pairing spike of negative edge is that avalanche signal effectively separates in time with photon signal so that can by one independently detection door be that avalanche signal takes out with photon signal.
4. a kind of two-door control avalanche photodide single photon detection method according to claim 1, it is characterized in that described enough wide pulse voltage refers to pulse width and is: 50-200 nanosecond, pulse height are the pulse voltage of 5.000 ± 0.005V.
5. a kind of two-door control avalanche photodide single photon detection method according to claim 1 is characterized in that described detection door gate2 in gate bias voltage gate1 time interscan, thus the fine setting detection time.
6. a kind of two-door control avalanche photodide single photon detection method according to claim 5 is characterized in that described detection door gate2 is controlled chronotron to be triggered in the forward position of gate bias voltage produce a time-delay t in gate bias voltage gate1 time interscan
d, at t
dAfter time, " detection door generation " circuit produces a detection door and is used to catch corresponding photon avalanche signal, because the amount of delay of controlled chronotron is adjustable, and realizes the scanning of detection door in the door bias voltage.
7. a kind of two-door control avalanche photodide single photon detection method according to claim 1 is characterized in that a photon incident ought only be arranged at every turn, and has a plurality ofly when reaching the time, places a plurality of detection door gate2 in the detection door gate1 time.
8. a kind of two-door control avalanche photodide single photon detection method according to claim 7, it is characterized in that described a plurality of detection door gate2 that in the detection door gate1 time, place, be to realize by a plurality of controlled chronotrons are in parallel, promptly the controlled chronotron generation multichannel time-delay t of a plurality of parallel connections is triggered in the forward position of gate bias voltage gate1
d, after each time-delay finished, " detection door generation " circuit all can produce a detection door and be used to catch corresponding photon avalanche signal.
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| CNB200410016502XA CN100363724C (en) | 2004-02-24 | 2004-02-24 | Double-gate-control avalanche photodiode signle photonic detection method |
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| CNB200410016502XA CN100363724C (en) | 2004-02-24 | 2004-02-24 | Double-gate-control avalanche photodiode signle photonic detection method |
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| CN1560577A CN1560577A (en) | 2005-01-05 |
| CN100363724C true CN100363724C (en) | 2008-01-23 |
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| JPWO2010029638A1 (en) * | 2008-09-12 | 2012-02-02 | 三菱電機株式会社 | Photon detector |
| CN102004003B (en) * | 2010-09-27 | 2012-02-08 | 南通墨禾量子科技发展有限公司 | High time resolution low noise single photon detector based on optical pulse synchronization |
| JP5808592B2 (en) * | 2011-07-04 | 2015-11-10 | 浜松ホトニクス株式会社 | Reference voltage determination method and recommended operating voltage determination method |
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| CN109883558B (en) * | 2019-03-18 | 2020-02-07 | 清华大学 | Device and method for measuring avalanche signal of avalanche photodiode |
| CN112393810B (en) * | 2019-08-16 | 2022-02-18 | 华为技术有限公司 | Single photon detection device and method |
| CN111121984B (en) * | 2019-12-17 | 2021-09-24 | 重庆邮电大学 | Avalanche photodetector capable of working in dual modes |
| CN112083399A (en) * | 2020-07-17 | 2020-12-15 | 科沃斯机器人股份有限公司 | Measuring device and autonomous mobile device |
| CN113588103B (en) * | 2021-08-18 | 2022-07-29 | 国开启科量子技术(北京)有限公司 | Method and apparatus for extracting avalanche signal |
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| US6541752B2 (en) * | 2000-03-09 | 2003-04-01 | Politecnico Di Milano | Monolithic circuit of active quenching and active reset for avalanche photodiodes |
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Patent Citations (4)
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|---|---|---|---|---|
| US4945227A (en) * | 1986-11-25 | 1990-07-31 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Avalanche photodiode quenching circuit |
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