CN109830590A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN109830590A CN109830590A CN201910108701.XA CN201910108701A CN109830590A CN 109830590 A CN109830590 A CN 109830590A CN 201910108701 A CN201910108701 A CN 201910108701A CN 109830590 A CN109830590 A CN 109830590A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The invention discloses a kind of light emitting devices.In some embodiments, light emitting device, comprising: bracket has the mounting surface for installing LED chip；LED chip includes transparent substrate and extension lamination, is installed in the mounting surface of the bracket；Encapsulating material layer is covered on the surface of the LED chip, and the LED chip is sealed on the bracket.Wherein the top of the transparent substrate is equipped with the first reflecting layer, lower section is equipped with the second reflecting layer, the light of the LED chip transmitting injects the encapsulating material layer, and some light is incident to the transparent substrate after reflection or scattering, by projecting the substrate after the reflection of the first, second reflecting layer.
Description
Technical field
The present invention relates to field of semiconductor devices, specially a kind of light emitting device.
Background technique
Light emitting diode is widely used in solid-state lighting light source.Compared to traditional incandescent lamp bulb and fluorescent lamp, shine
Diode has many advantages, such as that power consumption is low and the service life is long, therefore light emitting diode has gradually replaced conventional light source, and applies
In various fields, such as traffic sign, backlight module, street lighting, Medical Devices.
Summary of the invention
The present invention provides a kind of light emitting devices, comprising: bracket has the mounting surface for installing LED chip；LED
Chip includes transparent substrate and extension lamination, is installed in the mounting surface of the bracket；Encapsulating material layer is covered in described
On the surface of LED chip, the LED chip is sealed on the bracket.Further, the top of the transparent substrate is equipped with
First reflecting layer, lower section are equipped with the second reflecting layer, and the light of the LED chip transmitting injects the encapsulating material layer, part light
Line is incident to the transparent substrate after reflection or scattering, by projecting the substrate after the reflection of the first, second reflecting layer.
In some embodiments, being covered on the encapsulating material layer around and above the LED chip includes fluorescent powder.
In some embodiments, the encapsulating material layer positioned at the lower section of plane where first reflecting layer contains fluorescent powder.
Preferably, the upper surface of the LED is light-emitting surface, and first reflecting layer is 20 microns at a distance from the light-emitting surface
Below.
Further, which can also include a binder course between the extension lamination and substrate, described
First reflecting layer is located between the binder course and transparent substrate.In some embodiments, which can wrap up simultaneously
The side of the binder course.
In some embodiments, at least provided with a third reflecting layer between the extension lamination and binder course.Preferably, institute
The upper surface for stating LED is light-emitting surface, and the third reflecting layer is 10 microns or less at a distance from the light-emitting surface.
In some embodiments, which can also include a binder course between the extension lamination and substrate,
The binder course contains a reflecting layer as the first reflecting layer.
In some embodiments, the LED chip also includes the first electrode and second electrode on the substrate, should
First electrode and second electrode are located at the outside of the extension lamination, are electrically connected with the lower surface of the extension lamination.
In some embodiments, the LED chip also includes conductive layer, first electrode and the second electricity on substrate
Pole, the first electrode and second electrode pass through conductive layer respectively and draw from the lower surface of the extension lamination, towards outside described
Prolong the upper surface of lamination.
Further, the branch is provided with the first wire welding area and the second wire welding area, first wire welding area and the second wire welding area
Electrically isolated from one another, the first electrode and second electrode are connected respectively to the first wire welding area and of the bracket by lead
Two wire welding areas.
Preferably, the extension lamination removes growth substrates, and it successively includes first that upper surface is light-emitting surface from top to bottom
Semiconductor layer, active layer and the second semiconductor layer.
Further, the LED chip also includes the first electrical connection and the second electric connection layer, wherein the first electric connection layer is electric
The first semiconductor layer and first electrode are connected, the second electric connection layer is electrically connected the second semiconductor layer and second electrode.Preferably, institute
Stating the first electric connection layer includes a reflecting layer as the first reflecting layer.
In some embodiments, which can also include third electric connection layer, be located at the first, second electrical connection
The lower section of layer has at least one first extension and second extension, wherein the first extension runs through the first semiconductor
Layer, active layer, contact, the second extension is contacted with the second electric connection layer with the second semiconductor layer.Preferably, described first,
Two electric connection layers structure sheaf having the same and thickness.Preferably, the third electric connection layer includes one layer of reflecting layer as the
One reflecting layer.
In some embodiments, the bracket has a groove structure, and the LED chip is in the groove, the envelope
Package material layer covers the upper surface and side surface of the LED chip simultaneously.
In some embodiments, which can also include a reflective glue, which is located at the bracket and package material
Between the bed of material, and around the LED chip.Preferably, which reaches around the LED core until reaching
The upper surface of the substrate, or higher than the plane where the upper surface of base plate.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification
It obtains it is clear that understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.In addition, attached drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is a schematic diagram, illustrates the structure of a known LED encapsulation body.
Fig. 2 is a schematic diagram, illustrates the structure of a known LED encapsulation body.
Fig. 3 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Fig. 4 is a schematic diagram, illustrates the LED chip structure of the light emitting device of some embodiments.
Fig. 5 is a schematic diagram, illustrates the LED chip structure of the light emitting device of some embodiments.
Fig. 6 is a schematic diagram, illustrates the LED chip structure of the light emitting device of some embodiments.
Fig. 7 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Fig. 8 is a schematic diagram, the part light path of light emitting device shown in explanatory diagram 7.
Fig. 9 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 10 is a schematic diagram, illustrates the LED chip structure of the example light emitting device of some implementations.
Figure 11 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 12 is a schematic diagram, illustrates the LED chip structure of the example light emitting device of some implementations.
Figure 13 is a schematic diagram, illustrates the LED chip structure of the example light emitting device of some implementations.
Figure 14 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 15 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 16 is a schematic diagram, illustrates the LED chip structure of the example light emitting device of some implementations.
Figure 17 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 18 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 19 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 20 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 21 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 22 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 23 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Figure 24 and 25 is floor map and fragmentary side cross-sectional view respectively, illustrates the luminous dress of some examples of the present invention
It sets.
Figure 26 is a schematic diagram, illustrates the light emitting device of some examples of the present invention.
Specific embodiment
Light-emitting diode chip for backlight unit and preparation method thereof of the invention is described in detail below with reference to schematic diagram, into
One step is introduced before the present invention, it should be understood that due to that can be transformed to specific embodiment, the present invention is simultaneously unlimited
In following specific embodiments.It is also understood that being used since the scope of the present invention is only defined by the following claims
Embodiment be introductory, rather than restrictive.Unless otherwise stated, used herein of all technologies and science
Term is identical as the meaning that those skilled in the art are commonly understood by.
In the following description content, component similar or identical will be indicated with being identically numbered.
Fig. 1 shows a kind of known LED light emission device, including package support 110, LED chip 120 and encapsulating material layer
130, wherein bracket 110 includes bottom 111 and side wall 112, and wherein chip installation area 1101, the first bonding wire is arranged in upper base surface
Area 1102 and the second wire welding area 1103, wherein the first wire welding area 1102 and the second wire welding area 1103 are electrically isolated from one another, LED chip
120 use horizontal structure, are installed on the chip installation area 1101, p, n-electrode are located on light-emitting surface, pass through lead 141,142
It is respectively connected to the first wire welding area 1102 and the second wire welding area 1103 of bracket 110, which is sealed in by encapsulated layer 130
On the bracket 110.Further, package support 110 may include bottom 111 and side wall 112, and the two forms a space and is used for
Accommodate the LED chip 120.In the light emitting device, the electrode of LED chip 120 is located on light-emitting surface, has shading and/or suction
The effect of light.On the other hand, electrode is located in extension lamination, and routing crosses line process and is possible to that extension lamination can be damaged.
Fig. 2 shows another known LED light emission device.The LED chip 120 that the light emitting device uses is upside-down mounting knot
Structure, electrode is towards the bottom surface of bracket 111.The light emitting device can solve light-emitting surface top electrode in light emitting device shown in FIG. 1
The problem of shading, extinction.However, flip-chip needs special equipment when being installed on bracket, and need to be aligned.
Fig. 3 shows a kind of light emitting device implemented according to the present invention.The light emitting device includes: bracket 210, LED chip
220, encapsulating material layer 230.Specifically, bracket 210 includes bottom 211 and wall portion 212, bowl structure is formed, wherein bottom 211
Upper surface be provided with chip mounting area 2101, the first wire welding area 2102 and the second wire welding area 2103, wherein the first wire welding area
2102 and second wire welding area 2103 it is electrically isolated from one another.LED chip 220 is installed on the installing zone 2101 of bracket, and light-emitting surface
Upward, p, n-electrode are respectively connected to the first wire welding area 2102 and the second wire welding area of bracket 210 by lead 241,242
2103.LED chip is packaged on the bracket by encapsulating material layer.
Fig. 4 shows a kind of structure of LED chip 220 for light emitting device shown in Fig. 3, and the LED chip is from top to bottom
Successively include: extension lamination 2210, first electrode 2221, second electrode 2222, electric connection layer 2240 and substrate 2230.The LED
The extension lamination of chip is supported by substrate 2230, and the upper surface S11 of extension lamination 2210 is as light-emitting surface, without growth substrates.
Here, " without growth substrates " indicate that the growth substrates that use when necessary in order to grow are removed or at least from extension lamination
By thinning significantly.
Specifically, extension lamination 2210 has opposite upper surface S11 and lower surface S12, wherein upper surface S11 is used as
Smooth surface includes the first semiconductor layer 2211, active layer 2212 and the second semiconductor layer 2212, first semiconductor layer 2211 and the
Two semiconductor layers 2213 may respectively be p-type semiconductor layer and n-type semiconductor layer.For example, first semiconductor layer and the second half is led
Body layer can be by passing through chemical formula AlxInyGa(1-x-y)The nitride half of N (wherein, 0≤x≤1,0≤y≤1,0≤x+y≤1) expression
Conductor is formed, and but not limited to this, and the semiconductor based on GaAs or the AlGaInP semiconductor material based on GaP also can be used
Material.Active layer 2212 can have a multi-quantum pit structure (MQW) based on nitride, InGaN/GaN, GaN/AlGaN etc., but
It is not limited to this, other semiconductors, such as Galas/AlGaAs, InGaP/GaP, GaP/AlGaP etc. also can be used.
Electric connection layer 2240 is formed on the lower surface S12 of extension lamination, including the first electric connection layer 2241 and second
Electric connection layer 2242,2241 both ends of the first electric connection layer are separately connected the first semiconductor layer 2211 and first electrode 2221, and second
The both ends of electric connection layer 2241 are separately connected the second semiconductor layer 2213 and second electrode 2222.First electric connection layer 2241 and
The material of two electric connection layers 2242 can be the same or different.Wherein the material of the first electric connection layer 2241 can for Ag, Au,
Ti, Al, Cr, Pt, TiW, Ni or more than any combination, wherein Ag, Al are suitable as metallic reflective material, and TiW is suitable as
Metal clad material prevents metal from spreading, and Cr, Ni, Au are suitable as ohmic contact material.In order to reduce the first electric connection layer
2241 and the first resistance between semiconductor layer 2211, it also can be between the first electric connection layer 2241 and the first semiconductor layer 2211
Increase transparent current extending.Second electric connection layer includes the ohm for having good electrical connection properties with the second semiconductor layer 2213
Contact layer, such as Cr, Ni, Au, Al etc..The material of second electric connection layer can for Ag, Au, Ti, Al, Cr, Pt, TiW, Ni or with
On any combination, wherein Ag, Al are suitable as metallic reflective material, and TiW is suitable as metal clad material, prevent metal from expanding
It dissipates, Cr, Ni, Au are suitable as ohmic contact material.
First electrode 2221, second electrode 2222 are located at the outside of extension lamination 2210, i.e. the 2221, second electricity of first electrode
Projection of the pole 2222 on 2230 surface of substrate is located at outside the region of extension lamination 2210.The first electrode and second electrode pass through
Electric connection layer 2240 from the lower surface S12 of extension lamination 2210 draw, towards the upper surface S11 of extension lamination, thus be suitable for from
The ontology of positive side electrical contact light-emitting diode chip for backlight unit.Preferably, the upper surface of first electrode and second electrode is located at sustained height.
Substrate 2230 is used to support extension lamination 2210, and thickness is preferably 0 or more, 200 μm of 50 μ or less.In some realities
Example is applied, the thickness of the substrate 2230 can be 50 ~ 100 μm, such as 90 μm；In some embodiments, the thickness of the substrate 2230
It can be 100 ~ 150 μm, such as 120 μm or 130 μm；In some embodiments, the thickness of the substrate 2230 can also be
150 ~ 200 μm, such as 180 μm.Substrate 2230 preferably uses insulating materials, can be transparent material, such as Sapphire Substrate, pottery
Porcelain substrate etc. can also select high reflection material.
In above-mentioned light emitting device, first electrode and second electrode are located at the side of extension lamination, both avoid first electrode
And/or second electrode is arranged in the top of extension lamination and causes to block radiation, reduces radiation efficiency, and production is facilitated to beat
Line.
In some embodiments, substrate 2230 can be using with good Heat sink material, such as Si substrate, Cu substrate
Or ceramic substrate, electric connection layer 2240 is connect with heat-radiating substrate 2230 and the second semiconductor layer 2213 respectively at this time, is constituted good
Good passage of heat, guides heat into heat-radiating substrate from Second Type semiconductor layer.Due to multiple quantum wells exciting radiation via
Second semiconductor layer projects, and heat is easy to accumulate in the second semiconductor layer 2213, and electric connection layer 2242 is by heat well from the
Two semiconductor layers lead to heat-radiating substrate.
Fig. 5 shows a kind of structure of LED chip 220 for light emitting device shown in Fig. 3.In the LED chip, it is electrically connected
Connecing layer 2240, multilayer is arranged in the vertical direction, and is electrically isolated by insulating layer 2260.Specifically, substrate 2230 and outer
Prolong and is successively arranged third electric connection layer 2244, insulating layer 2260, the first conduction between lamination 2210 from top to bottom and leads 2241 and
Two electric connection layers 2242, the third electric connection layer 2244 have towards the first extension 2243 of extension lamination and the second extension
2245, the first extension 2243 has run through the first semiconductor layer 2221, active layer 2222, passes through opening 2271 and the second semiconductor
Layer 2213 is electrically connected, and the second extension 2245 is electrically connected by opening 2272 with the second electric connection layer 2242.
Preferably, the first electric connection layer 2241 and the second electric connection layer 2242 thickness having the same, material, it is same using being patterned in
It is formed in step, so can have the height mutually having, facilitate subsequent production that there is mutually level first electrode and the second electricity
Pole.
In a specific embodiment, the first electric connection layer 2241 is contacted with first electrode 2221 part, the second electricity
The part that articulamentum 2242 is contacted with second electrode 2222 is the materials such as relatively stable Ti, Pt, Au, Cr, TiW alloy of performance,
The first electric connection layer 2241 below light emitting region includes successively to go out the high reflectivity gold that light is reflected to light emitting region
Belong to material (such as Ag, Al etc.), stable metal material (such as Ti, Pt, Au, Cr or TiW for preventing previous materials from spreading
Deng).Third electric connection layer 2244 contains the extension 2243 for extending towards light-emitting surface and connecting with the second semiconductor layer 2213,
Its material preferably includes the reflecting materials such as Al, Cr or Ag.Further, which contacts with substrate 2230
Side may include binder course, for combine substrate.More preferably, which is metal material, can be simultaneously as heat dissipation
Layer, so that the heat for being deposited in the second semiconductor layer is quickly led to substrate 2230.On the other hand, substrate 2230 and extension are folded
The whole face contact of layer, ensure that the integrality of physical structure.
In some embodiments, the extension lamination 2210 of the LED chip 220 removes growth substrates, is membrane structure, simultaneously
First electric connection layer 2241 may include reflecting layer M1, therefore the distance D1 of light-emitting surface S11 of reflecting layer M1 to LED chip is
It within 10 μm, such as can be 4 ~ 8 μm, the distance D3 to luminescent layer is 1 μm hereinafter, so shortening light inside LED chip
Path, while increasing the ratio that projects from light-emitting surface S11 of light of the transmitting of active layer 2212, light emitting anger is preferably 150 °
Hereinafter, more preferably light emitting anger is such as 120 ~ 110 ° less than or equal to 120 °, in a specific embodiment, the LED core
The light emitting anger of piece can be 113 ° perhaps 115 ° or 118 °.
Further, third electric connection layer 2244 may include reflecting layer M2, and reflecting layer M2 is located on substrate 2230,
Distance to light-emitting surface S11 is preferably 20 μm hereinafter, being much smaller than the half of LED chip thickness T, is 7 ~ 12 μm more preferably, such as
Can for 8 μm perhaps 9 μm or μm.
Fig. 6 shows a kind of structure of LED chip 220 for light emitting device shown in Fig. 3.Not with LED chip shown in Fig. 5
With the third electric connection layer 2244 contains multiple extensions 2243 extended towards light-emitting surface, multiple extension
2243 implement the first semiconductor layer 2211, active layer 2212, connect with the second semiconductor layer 2213.Multiple extension 2243 is excellent
Choosing is uniformly distributed, and so has more preferably current expansion and heat dissipation characteristics, suitable for the application under high current density.
Preferably, total contact area of third electric connection layer 2244 and the second semiconductor layer 2213 is greater than the second semiconductor layer
The 1.5% of 2213 areas.The contact area of third electric connection layer 2243 and the second semiconductor layer 2213 can be designed according to demand,
Such as it can choose 2.3% ~ 2.8%, 2.8% ~ 4% or 4% ~ 6%.In some embodiments, increase by 2244 He of third electric connection layer
The direct contact area of second semiconductor layer 2213, can solve the heat dissipation problem of high power products, for example, large size chip or
Person's high-voltage chip etc..
In some embodiments, the diameter of the extension 2243 is 15 μm or more.Although guaranteeing third electric connection layer 2244
With total contact area of the second semiconductor layer 2213, heat dissipation characteristics can be improved, but if the lesser feelings of 2243 diameter of extension
Under condition, thinner extension 2243 has the thermal resistance more than linear scale, therefore in some embodiments, extension 2243 it is straight
Diameter is designed as 32 μm ~ 40 μm, better heat-radiation effect.As a kind of better embodiment, when the diameter of extension 2243 is 34 μ
When m ~ 36 μm, the quantity of extension 2243 is set as 20 ~ 25.
In some embodiments, the first electric connection layer 2241 and the second electric connection layer 2242 use structure having the same
Layer includes metallic reflector M1, and the side close to extension lamination of third electric connection layer 2244 may include metallic reflector M2,
The lower surface S12 of extension lamination 2210 is covered by metallic reflector M1, M2 substantially, and the downward light that active layer 2212 issues is direct
It is reflected, part light will not be caused to be absorbed using substrate.For example, the first electric connection layer 2241 and the second electric connection layer 2242
Ag metal layer be may include as the first reflecting layer M1, third electric connection layer 2244 contains Al metal layer, the Al metal layer one
Aspect can form Ohmic contact with the second semiconductor layer 2213, be on the other hand used as the second reflecting layer M2, cover as far as possible
The region of the lower surface S12 of extension lamination not covered by the first electric connection layer 2241 and the second electric connection layer 2242.
Preferably, which eliminates growth substrates, and rough surface 2210a can be set in light-emitting surface S11.
Fig. 7 simply illustrates a kind of light emitting device implemented according to the present invention.The light emitting device is reflected at least provided with two
Layer: M2 and M3, comprising: bracket 210, LED chip 220, encapsulating material layer 230.Wherein, bracket 210 includes bottom 211 and wall portion
212, the two forms bowl structure, and the surface of chip mounting area 2101 can be coated with reflecting layer M3, and LED chip 220 passes through
Binder course 250 is installed in the bowl, and encapsulating material layer 230 is filled the bowl and is sealed to LED chip 220.
Specifically, the reflecting layer M3 on setting 210 surface of bracket can be metallic reflector (such as Ag, Al high reflectance
Material) perhaps insulative reflective layer (such as DBR) or reflective glue material (such as white glue), thickness are preferably 5 μm or less.Knot
Conjunction layer 250 is transparent material, and light transmittance is preferably 70% or more, more preferably 80% or more.LED chip 220 has transparent substrate
2230, the upper surface side of the substrate 2230 is equipped with reflecting layer M2.The transparent substrate 2230 for visible light transmittance rate 80% with
On, preferably 90% or more, material can be sapphire, crystalline ceramics, glass etc..
In some embodiments, which can refer to structure shown in Fig. 4, and the substrate of LED chip is using saturating at this time
Bright substrate, the first electric connection layer 2241 can be used as reflecting layer M2.First electric connection layer 2241 can be formed by multiple-level stack,
Material layer comprising high reflection, such as can be preferred for high reflective metal material, the thickness of the material layer of the high reflection layer such as aluminium
It is 50 nanometers or less.
The LED chip 220 also uses Fig. 5 or structure shown in fig. 6, and wherein substrate 2230 selects transparent material, thereon
The third electric connection layer 2243 on surface can be used as reflective layer M2.In some embodiments, which is gold
Belong to material, reflectivity is 70% or more, at this time can be directly as reflecting layer.In some embodiments, the third electric connection layer
2243 are formed by multiple-level stack, wherein the side contacted with substrate 2230 includes the material layer compared with high reflection, such as can be aluminium
Contour reflective metal material, the thickness of the material layer of the high reflection layer are preferably 50 nanometers or less.
The substrate size of LED chip 220 shown in Fig. 4 to 6 be generally higher than extension lamination 2210 size (its cross section
Area is greater than the area of the cross section of extension lamination 2210), and thickness is much larger than the thickness of other structures layer, with GaN base LED core
For piece, the thickness of extension lamination 2210 is usually no more than 10 μm, such as can be 4 ~ 8 μm, is located at extension lamination 2210 and base
The overall thickness of electric connection layer, insulating layer, binder course between plate 2230 etc. is usually no more than 5 μm, such as can be 3 ~ 5 μm, and
Substrate 2230 is usually 50 μm or more, such as 50 μm of perhaps 100 μm of perhaps 120 μm perhaps 150 μm or 180 μm, because
The light that this active layer issues is easy to be incident on substrate via the reflection of rack side wall or scattering, the reflection of encapsulating material layer
2230 inside, may be by the Metal absorption on the metal or bracket of 2230 top of substrate.In light emitting device shown in Fig. 7, LED
Light part light as caused by the reflection of bowl that chip 220 issues is incident in transparent substrate 2230, transparent substrate 210
Above and below have reflecting layer, therefore light can be projected from the other end, reduce being combined the metal of layer metal or bracket 210 and inhale
It receives, as shown in Figure 8.
In some embodiments, it encapsulates in the encapsulating material layer 230 of the LED chip 220 containing particle 231, LED chip
220 some lights issued can be reflected or be scattered, and transparent substrate side is incident upon, since the upper and lower of transparent substrate 210 is equal
There are reflecting layer, therefore the Metal absorption that light can be projected from the other end without being combined layer metal or bracket.
In some embodiments, LED chip around and above be covered with fluorescent powder, the part light that LED chip 220 issues
Line, which can be reflected or be scattered, shines transparent substrate side, since the upper and lower of transparent substrate 210 has reflecting layer, light
The Metal absorption that can be projected from the other end without being combined layer metal or bracket.Preferably, photochromic for light emitting device
Uniformity, fluorescent powder covers to the lower section of the plane where the M2 of reflecting layer, and transparent substrate 2230 cooperates upper and lower reflection at this time
Layer, the light that can significantly reduce the sending of LED chip 220 are injected inside substrate and are absorbed through reflecting or scattering.
Fig. 9 simply illustrates a kind of light emitting device implemented according to the present invention.The light emitting device equally has at least two
The LED chip 220 of reflecting layer M2 and M3, use have transparent substrate 2230.It is transparent unlike light emitting device shown in Fig. 7
The reflecting layer M3 of 2230 lower section of substrate is formed directly into the back side of substrate 2230, and material can be metallic reflector (such as Ag, Al
The material of equal high reflectances) or insulative reflective layer (such as DBR).
Figure 10 shows a kind of structure of LED chip 220 for light emitting device shown in Fig. 9, the structure with it is shown in fig. 5
LED chip is essentially identical, and difference is: selecting transparent substrate 2230, and reflecting layer M3 is arranged at the back side of transparent substrate 2230.
In some embodiments, it is also possible to using Fig. 4 or structure shown in fig. 6, similarly in Fig. 4 or LED chip shown in fig. 6
Reflecting layer M3 is arranged in 220 2230 back side of substrate.
Figure 11 simply illustrates a kind of light emitting device implemented according to the present invention.The light emitting device includes: bracket 210, LED
Chip 220 is installed on bracket 210 by bonding layer 250, encapsulating material layer 230 covers the LED chip 220 with the LED chip
220 are sealed on the bracket.Wherein LED chip includes the bonding layer 2280 of both extension lamination 2210, substrate 2230 and connection,
Wherein the upper and lower of the bonding layer 2280 is equipped with the first reflecting layer M21(or M1) and the second reflecting layer M22.
Figure 12 shows a kind of structure of LED chip 220 for light emitting device shown in Fig. 9.The LED chip is from top to bottom
Successively include: extension lamination 2210,2221/ second electrode 2222 of first electrode, the electrical connection of the first electric connection layer 2241/ second
Layer, insulating layer 2260, third electric connection layer 2244, bonding layer 2280, reflecting layer 2290 and substrate 2230.Wherein the first reflecting layer
It can be the first electric connection layer 2241 and/or third electric connection layer 2244.Preferably, 2244 one side of third electric connection layer is electrically connected
Connect the second semiconductor layer 2213 and the first electric connection layer 2242, on the other hand be used as the first reflecting layer M21, including Al, Cr or
The reflecting materials such as Ag.Bonding layer 2280 is used to combine extension lamination 2210 and substrate 2230, and material can according to need selection
Metal material or nonmetallic materials.
In some embodiments, which is applied under high current density (such as current density >=1 A/mm2, can
Think 2 A/mm2Or 3A/mm2), which preferably uses metal bonding material, and reflecting layer 2290 is preferably at this time
Using the metal material (such as the metals such as aluminium, silver) of high reflection, heat dissipation channel can be so formed, is conducive to that second will be deposited in
The heat of semiconductor layer 2213 leads to bracket by third conductive layer 2244, bonding layer 2280, reflecting layer 2290, substrate 2230
On 210, exported from bracket 210.In some embodiments, the bonding layer 2280 of the light emitting device can also use insulating layer, this
When reflecting layer 2290 can for metallic reflector may be insulative reflective layer.
Figure 13 shows a kind of structure of LED chip 220 for light emitting device shown in Fig. 9.With LED core shown in Figure 12
Unlike the structure of piece, the side wall 2281 of bonding layer 2280 is by reflecting layer covers.The luminous dress of the LED chip 220 is installed
In setting, the light that LED chip 220 issues via the reflection of 210 side wall of bracket or the reflection of encapsulating material layer 230 and/or dissipates
It penetrates, is incident upon bonding layer 2280, the reflecting layer for being coated on the side wall 2281 of bonding layer is directly reflected, and is avoided light from entering injection and is connect
It closes 2280 inside layer.
Figure 14 simply illustrates a kind of light emitting device implemented according to the present invention.It is different from light emitting device shown in Figure 11
It is that reflecting layer 260 is provided on 2101 surface of chip mounting area of bracket 210, LED chip 220 is installed by binder course 250
In on the reflecting layer 260, wherein substrate 2230 is transparent material, and wherein the translucency of substrate is preferably 70% or more.LED chip
Structure can be with reference to structure shown in Figure 12 and 13.
In the light emitting device, included at least three reflecting layer: the first reflecting layer, the second reflecting layer M22 and third are anti-
A layer M3 is penetrated, wherein the first reflecting layer is set to the top of binder course 2280, can be M1 or M21, be mainly used for directly reflecting
It is 10 μm at a distance from the light that the active layer of LED chip emits downwards, with the light-emitting surface S11 of LED chip hereinafter, for example can be with
It is 4 ~ 8 μm, the light-emitting surface S11 between binder course 2280 and transparent substrate 2230, with LED chip is arranged in the second reflecting layer M22
Distance be 20 μm hereinafter, for example can be 7 ~ 10 μm or 10 ~ 15 μm, third reflecting layer M3 is set to transparent substrate 2230
It is 50 μm or more at a distance from the light-emitting surface S11 of LED chip between bracket 210, second reflecting layer M22, third reflecting layer
M3 and transparent substrate 2230 form a transmission line, reflection of the light that LED chip 220 issues due to 210 side wall of bracket
Caused by part light be incident in transparent substrate 2230, light can be projected from the other end of transparent substrate 2230, reduction be combined layer
2280 or bracket 210 absorb.
Figure 15 simply illustrates a kind of light emitting device implemented according to the present invention.The light emitting device equally contains at least three
A the first reflecting layer of reflecting layer, the second reflecting layer M22 and third reflecting layer M3, unlike light emitting device shown in Figure 14, the
Three reflecting layer M3 are between binder course 250 and transparent substrate 2230.Figure 16 shows one for light emitting device shown in Figure 15
The structure of kind LED chip 220, third reflecting layer M3 are formed in the back side of transparent substrate 2230.
Figure 17 simply illustrates a kind of light emitting device implemented according to the present invention.It is different from light emitting device shown in Figure 11
It is that the LED chip 220 of the light emitting device has reflection substrate 2230, and reflectivity is preferably 90% or more, can is whiteware,
Binder course 250 for fixing LED chip 220 is preferably reflecting material, and reflectivity is preferably 80% or more, can be white
Crystal-bonding adhesive.The specific structure of LED chip 220 can be reflection substrate, third electricity with reference to structure shown in Fig. 5 or Fig. 6, substrate 2230
The side of 2244 adjacent substrates of articulamentum includes binder course 2280.Reflecting layer M1 and/or M21 are provided with above binder course 2280,
Therefore the downward light that active layer issues directly is reflected, and part light will not be caused to be absorbed using binder course.Meanwhile at this
Light part illumination as caused by the reflection of rack side wall that the LED chip 220 of light emitting device issues is mapped to reflection substrate
2230 surface can directly be reflected, and the extinction of substrate 2230 or bracket 210 is reduced.
In some embodiments, it encapsulates in the encapsulating material layer 230 of the LED chip 220 containing particle 231, LED chip
220 some lights issued can be reflected or be scattered, and are incident upon 2230 side of reflection substrate, directly reflected.
In some embodiments, LED chip around and above be covered with fluorescent powder, the part light that LED chip 220 issues
Line, which can be reflected or be scattered, shines reflection substrate side, is directly reflected.
Figure 18 simply illustrates a kind of deformation of light emitting device shown in Figure 17.The substrate of the LED chip 220 of the light emitting device
Be not limited to reflection substrate, can for transparent substrate (such as sapphire substrate, glass substrate etc.) or extinction substrate (such as
Silicon substrate etc.), reflecting layer 2231 is formed in the side wall of substrate.
Figure 19 simply illustrates a kind of light emitting device implemented according to the present invention.With light emitting device something in common shown in Fig. 3
It repeats no more, the difference is that: it is equipped with layer of reflective material 231 in the lower section of encapsulating material layer 230, surrounds LED chip
220 lateral surface S13, but the light-emitting surface S11 of LED chip is not covered.The reflecting material can for silicone resin, epoxides or
Silicone resin-epoxides mixing material, such as white glue.Preferably, the upper surface S21 of the reflective material layer 231 is preferably not less than
The 2230 upper surface S14 of substrate of LED chip.
In the light emitting device shown in Fig. 3, the thickness of LED chip 220 depends primarily on the thickness of substrate 2230, and the substrate is thick
Degree is typically up to 50 0 or more μ, such as 100 μm, therefore when light emitting device work is that the light that LED chip 220 emits injects envelope
When package material layer 230, some light is reflected or is scattered, be easy enter to inject inside substrate from the side of substrate 2230, by substrate,
Bracket or LED chip absorbed inside.Light emitting device shown in Figure 19 surrounds the week of LED chip between encapsulating material layer and bracket
Filling layer of reflective material 231 is enclosed, which is not less than the upper surface S14 of substrate 2230, therefore can be effectively prevented
The light of LED chip transmitting is injected injects substrate 2230 after reflection or scattering after encapsulating material layer 230.
In some embodiments, the upper surface S21 of the layer of reflective material and the light-emitting surface S11 distance H1 of LED chip are excellent
It is first within 20 μm, within more preferably 10 μm.In a specific embodiment, reflective material layer 231 was around LED core 220 weeks
It encloses and reaches the upper surface S14 until substrate 2230.In some embodiments, the reflective material layer 231 is around LED core 220
Reach the electrode until covering LED chip, as shown in figure 20.In some embodiments, the reflective material layer 231 is around LED core
Reach around 220 until being flushed with the upper surface of LED chip, as shown in figure 21.
Figure 22 simply illustrates a kind of light emitting device implemented according to the present invention.Unlike light emitting device shown in Fig. 3,
The bracket 210 of the light emitting device does not have bowl structure, for example, slab construction, and encapsulating material layer 230 covers LED chip and draws
Line.In some preferred embodiment, the top that encapsulating material layer 230 corresponds to LED chip 220 forms lens arrangement 232, this is thoroughly
Mirror structure 232 can use identical material with encapsulating material layer 230, can also use different materials.
Figure 23 simply illustrates a kind of light emitting device implemented according to the present invention.It is different from light emitting device shown in Figure 22
It is that the reflecting material 231 around LED chip 220, the reflecting material 231 are equipped between bracket 210 and encapsulating material layer 230
It can be flushed with the light-emitting surface S11 of LED chip, or be lower than light-emitting surface S11.
Figure 24 and 25 simply illustrates a kind of light emitting device implemented according to the present invention.The light emitting device includes bracket 210
With at least two LED chip 220 and encapsulating material layer (not shown in FIG.) being installed on bracket.
In the light emitting device, multiple LED chips 220 are installed on 210 lining of same bracket, adjacent LED chip 220 it
Between there is a problem of mutually it is light-blocking.Defining OL is the length that two adjacent LED chips 220 overlap, and L is the length of LED chip,
W is the width of LED chip, and P is the perimeter of the LED chip 220, i.e., 2 × (L+W), T are the thickness of the LED chip 220, and G is phase
Spacing between adjacent LED chip 220, the light-blocking mainly clearance G between the thickness T of chip, chip between LED chip and
The overlapping length of adjacent LED chip is related, specifically:, gap LED chip between directly proportional to the thickness T of LED chip
G is inversely proportional, to adjacent LED chip overlap region account for ratio (OL/P) of the side surface gross area of chip it is directly proportional, therefore
Light-blocking factor F1 and F2 is defined, wherein F1 ∝ T/G, F2 ∝ OL/P, defining light-blocking coefficient is R=F1 × F2, and R is bigger, the LED core
Side block shadow sound between piece is bigger.In the present embodiment, the light emitting device is using LED chip shown in Fig. 5 or 6, outside
Prolong and is equipped with reflecting layer M1 or M21, the distance of the light-emitting surface S11 in the reflecting layer to LED chip between lamination 2210 and substrate 2230
D1 can be up to 10 μm hereinafter, the distance D2 to active layer can be up to 5 μm hereinafter, therefore the light emitting anger of LED chip is smaller, preferably etc.
It in or less than 120 °, such as can be 110 ~ 120 °, the light that active layer 2212 emits mainly is projected from light-emitting surface S11, therefore
Side block shadow sound between LED chip is smaller, and the spacing G of adjacent chips can be 150 μm, and preferred values are 50 ~ 120 μm, can be with
Light-blocking influence and package body sizes are taken into account, corresponding, light-blocking coefficients R preferably takes 0.2 or more numerical value, in this way can more sufficiently
Utilize space, while in the constant situation of light efficiency, reduce under package dimension or same package size and increase the face of chip
Product, to promote light efficiency.Preferably, the preferable value of the light-blocking coefficients R is 0.2 ~ 2.
In one embodiment, the size of LED chip is as follows: length L is 1000 μm, and width W is 500 μm, and height T is
150 μm, the overlapping length OL between adjacent LED chip is 500 μm, and spacing G is 100 μm, then R=0.25.In another embodiment
In, the size constancy of LED chip, the overlapping length OL between adjacent LED chip is 1000 μm, and spacing G is 100 μm, then R=
0.5.In another embodiment, the size constancy of LED chip, overlapping length OL are 1000 μm, and spacing G is 50 μm, then R=1.
In some specific implementation patterns, setting wavelength conversion layer can according to need, which can be straight
It connects and mixes fluorescent powder in encapsulating material layer or using wavelength convert thin slice.Preferably, which is formed in LED core
Where the upper surface of piece more than plane, preferably, wavelength conversion layer only is arranged on the light-emitting surface of LED chip.
A kind of light emitting device of Figure 26 simple displaying, unlike light emitting device shown in Figure 24, which includes
The spectrum of bracket and at least three LED chips on bracket, multiple LED chip transmitting is different, such as emits respectively
Red, blue and green three kinds of light, while bracket can be slab construction or bowl structure.LED chip can be using shown in Fig. 4 ~ 6
Any one LED chip.
In some embodiments, which requires in 4A/mm2Even 5A/mm2High current density under, such as at this time
It is preferred that using LED chip shown in fig. 6.Specifically, the insulating substrate that the substrate 2230 is preferably good using thermal diffusivity, such as ceramics
The structure of thermoelectricity separation has may be implemented in substrate, provides good basis for high current density driving, while can be quickly by extension
The heat that lamination generates leads to bracket and exports；Further, the light emitting anger of the LED chip is less than or equal to 120 °, for example,
120 ~ 110 °, in the constant situation of light efficiency, it can effectively reduce under package dimension or same package size and increase the face of chip
Product.In a tool embodiment, which is applied to stage lighting, includes tetra- LED chips of A, B, C, D, emits respectively white
Light, feux rouges, blue light and green light.Wherein the light-emitting surface of White-light LED chip is coated with fluorescent powder, for emitting white light.Each LED core
Spacing between piece is 50 ~ 150 microns.
The above is only a preferred embodiment of the present invention, it is noted that for those skilled in the art,
Without departing from the principles of the invention, several improvements and modifications can also be made, these improvements and modifications also should be regarded as this hair
Bright protection scope.
Claims (21)
1. a kind of light emitting device, comprising:
Bracket has the mounting surface for installing LED chip；
LED chip includes transparent substrate and extension lamination, is installed in the mounting surface of the bracket；
Encapsulating material layer is covered on the surface of the LED chip, and the LED chip is sealed on the bracket；
It is characterized by: the top of the transparent substrate is equipped with the first reflecting layer, lower section is equipped with the second reflecting layer, the LED core
The light of piece transmitting injects the encapsulating material layer, and some light is incident to the transparent substrate after reflection or scattering, by first,
The substrate is projected after the reflection of second reflecting layer.
2. light emitting device according to claim 1, it is characterised in that: be covered on around and above the LED chip
Encapsulating material layer includes fluorescent powder.
3. light emitting device according to claim 2, it is characterised in that: positioned at the lower section of plane where first reflecting layer
Encapsulating material layer contains fluorescent powder.
4. light emitting device according to claim 1, it is characterised in that: the upper surface of the LED be light-emitting surface, described first
Reflecting layer is 20 microns or less at a distance from the light-emitting surface.
5. light emitting device according to claim 1, it is characterised in that: further include one between the extension lamination and substrate
Binder course, first reflecting layer is located between the binder course and transparent substrate.
6. light emitting device according to claim 5, it is characterised in that: wrap up the binder course simultaneously in first reflecting layer
Side.
7. light emitting device according to claim 5, it is characterised in that: between the extension lamination and binder course at least provided with
One third reflecting layer.
8. light emitting device according to claim 6, it is characterised in that: the upper surface of the LED is light-emitting surface, the third
Reflecting layer is 10 microns or less at a distance from the light-emitting surface.
9. light emitting device according to claim 1, it is characterised in that: further include one between the extension lamination and substrate
Binder course, which contains a reflecting layer as the first reflecting layer.
10. light emitting device according to claim 1, it is characterised in that: the LED chip also include positioned at the substrate it
On first electrode and second electrode, the first electrode and second electrode are located at the outside of the extension lamination, with the extension
The lower surface of lamination is electrically connected.
11. light emitting device according to claim 1, it is characterised in that: the LED chip also includes on substrate
Conductive layer, first electrode and second electrode, the first electrode and second electrode pass through conductive layer from the extension lamination respectively
Lower surface draw, towards the upper surface of the extension lamination.
12. light emitting device described in 0 or 11 according to claim 1, it is characterised in that: the branch be provided with the first wire welding area and
Second wire welding area, first wire welding area and the second wire welding area are electrically isolated from one another, and the first electrode and second electrode are by drawing
Line is connected respectively to the first wire welding area and the second wire welding area of the bracket.
13. light emitting device according to claim 12, it is characterised in that: the extension lamination removes growth substrates, thereon
Surface is light-emitting surface, from top to bottom successively includes the first semiconductor layer, active layer and the second semiconductor layer.
14. light emitting device according to claim 13, it is characterised in that: the LED chip also include the first electrical connection and
Second electric connection layer, wherein the first electric connection layer is electrically connected the first semiconductor layer and first electrode, the electrical connection of the second electric connection layer
Second semiconductor layer and second electrode.
15. the light emitting device of 4 arts according to claim 1, it is characterised in that: first electric connection layer is made comprising a reflecting layer
For the first reflecting layer.
16. light emitting device according to claim 14, it is characterised in that: further include third electric connection layer, be located at first,
The lower section of second electric connection layer has at least one first extension and second extension, wherein the first extension runs through
First semiconductor layer, active layer are contacted with the second semiconductor layer, and the second extension is contacted with the second electric connection layer.
17. light emitting device according to claim 16, it is characterised in that: the third electric connection layer includes one layer of reflecting layer
As the first reflecting layer.
18. light emitting device according to claim 16, it is characterised in that: first, second electric connection layer has identical
Structure sheaf and thickness.
19. light emitting device according to claim 1, it is characterised in that: the bracket has a groove structure, the LED
Chip is located in the groove, and the encapsulating material layer covers the upper surface and side surface of the LED chip simultaneously.
20. light emitting device according to claim 1, it is characterised in that: further include a reflective glue, which is located at the branch
Between frame and encapsulating material layer, and around the LED chip.
21. light emitting device according to claim 21, it is characterised in that: the reflective rubber ring reaches around the LED core
To the upper surface up to reaching the substrate, or higher than the plane where the upper surface of base plate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010937982.2A CN112103273B (en) | 2019-02-03 | 2019-02-03 | Light emitting device |
| CN201910108701.XA CN109830590B (en) | 2019-02-03 | 2019-02-03 | Light emitting device |
| PCT/CN2019/092366 WO2020155530A1 (en) | 2019-02-03 | 2019-06-21 | Light-emitting device |
| US17/360,956 US20210328117A1 (en) | 2019-02-03 | 2021-06-28 | Light-emitting device |
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| CN201910108701.XA CN109830590B (en) | 2019-02-03 | 2019-02-03 | Light emitting device |
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| CN112259571A (en) * | 2020-10-22 | 2021-01-22 | 武汉华星光电技术有限公司 | Flexible backboard and display device |
| CN114156393A (en) * | 2021-11-26 | 2022-03-08 | 深圳市兆纪光电有限公司 | Mini-LED and manufacturing method thereof |
| CN114520281A (en) * | 2020-11-20 | 2022-05-20 | 隆达电子股份有限公司 | Light-emitting device, backlight plate and display panel |
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| US20180076183A1 (en) * | 2015-06-05 | 2018-03-15 | Lumens Co., Ltd. | Light emitting device package and light emitting device package module |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112103273A (en) | 2020-12-18 |
| CN112103273B (en) | 2023-02-17 |
| CN109830590B (en) | 2020-10-20 |
| WO2020155530A1 (en) | 2020-08-06 |
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