CN109830531A - RC-IGBT device and its manufacturing method - Google Patents
RC-IGBT device and its manufacturing method Download PDFInfo
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- CN109830531A CN109830531A CN201910034228.5A CN201910034228A CN109830531A CN 109830531 A CN109830531 A CN 109830531A CN 201910034228 A CN201910034228 A CN 201910034228A CN 109830531 A CN109830531 A CN 109830531A
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Abstract
The invention discloses a kind of RC-IGBT devices, the front RC-IGBT forms each functional areas of the device, the collecting zone that the back side RC-IGBT is formed is arranged in matrix, and the back side RC-IGBT is additionally provided with the boot section for promoting IGBT to enter conductance modulation state, and collecting zone is not present in boot section present position.The invention also discloses a kind of RC-IGBT device making methods.The present invention joined guidance plot structure in the N collector region layout design of RC-IGBT device, is able to guide IGBT and enters IGBT conductance modulation state as early as possible, can eliminate the snapback phenomenon of RC-IGBT on-state voltage drop, have a distinct increment to RC-IGBT performance.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of RC-IGBT device.The invention further relates to one kind
The manufacturing method of RC-IGBT device.
Background technique
Traditional IGBT needs one fast recovery diode of inverse parallel in products application, and the effect of this diode is main
It is to be used for afterflow, and IGBT often has inductive load in application in circuit, self-induction will lead to IGBT and turn off wink in device
Between there is additional self induction voltage, to IGBT exist destroy, FRD can by this self induction voltage short circuit, play the protection to IGBT
Effect.And in order to adapt to the needs of different circuits, inverse conductivity type insulated gate bipolar transistor (RC IGBT) is used as a great potential
Alternative device come into being.Compared to traditional IGBT device, not only there is suitable large scale to reduce in module area, Er Qie
Advantage in performance is also clearly.
Although the shortcomings that RC IGBT has many advantages, the device is similarly very it will be evident that wherein main
The problem of be IGBT on-state voltage drop fold-back phenomenon (snapback).RC IGBT is that FRD and IGBT are combined into a core in fact
Piece.The maximum difference of RC IGBT is overleaf anode-side, is not continuous P collector region domain, and by N collector region and P collector region
It is intervally arranged.When IGBT bears reverse withstand voltage, FRD conducting, this is that it is referred to as inverse the reason of leading.When device is in conducting
At initial stage, conduction voltage drop VCESAT quickly increases with the increase of electric current, close to the characteristic of VDMOS, and when voltage is more than spy
When definite value Vp (writing a Chinese character in simplified form into Vsp sometimes), as the increase of current density sharply declines again, from test curve, there is one section
Very big negative impedance region, this is the most important snapback phenomenon of IGBT.On-state voltage drop turn back this phenomenon Producing reason be because
N collector region, P collector region and N collector region are introduced by same short circuit metal, when device is just connected, device for the device back side
Part is in monopole on state, and in the state of VDMOS, electronics is from Channeling implantation to the drift region N-, then arrives N+ for entire device work
Then buffer area is directly flowed out from the collector area N.As shown in FIGS. 1 and 2 when electronics reaches above P+ collecting zone, it can transverse flow
It is dynamic, until being flowed out from N+ collector.Since the current potential of a, b, c, d, e, f are different, the point highest of a point, therefore, IGBT meeting
It is connected in the point position a, is then slowly extended to N-type collector region at first, sequence is successively b, c, d, e, f, as f point IGBT
After conducting, that IGBT device enters fully conducting state, is the pressure drop folding for unevenly resulting in IGBT of local current therefore
It returns.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of RC IGBT of snapback phenomenon that can be reduced on-state voltage drop
Structure.
The present invention also provides a kind of manufacturing methods of RC IGBT structure.
In order to solve the above technical problems, RC-IGBT device provided by the invention, it is each which forms the device
Functional areas, wherein the collecting zone that the back side RC-IGBT is formed is arranged in matrix, and the back side RC-IGBT, which is additionally provided with, promotes IGBT to enter
Collecting zone is not present in the boot section of conductance modulation state, boot section present position.
It is further improved the RC-IGBT device, the boot section is n-type doping.
It is further improved the RC-IGBT device, the boot section is located in the geometry of the back side the RC-IGBT figure
The heart.
It is further improved the RC-IGBT device, the boot section area is the RC-IGBT device back side gross area
5%-20%.
It is further improved the RC-IGBT device, the figure of the boot section is circle.
The present invention provides RC-IGBT device making method described in a kind of above-mentioned any one, comprising the following steps:
1) gate MOS structure fabrication is manufactured groove in multicrystalline silicon substrate front
2) multicrystalline silicon substrate Facad structure metallizes；
3) multicrystalline silicon substrate front bongding, which forms protection structure and executes at the multicrystalline silicon substrate back side, is thinned BG；
4) the multicrystalline silicon substrate back side carries out lithographic definition and carries out first time ion implanting formation boot section；
5) removal protection structure；
6) difference lithographic definition in the multicrystalline silicon substrate back side carries out second of ion implanting and forms buffer layer；
7) multicrystalline silicon substrate back side lithographic definition collecting zone carries out third time ion implanting and forms collecting zone；
8) rapid thermal annealing RTA；
9) multicrystalline silicon substrate backside structure metallizes.
It is further improved the RC-IGBT device making method, implementation steps 2) when, protection knot is formed using glass substrate
Structure.
It is further improved the RC-IGBT device making method, implementation steps 4) when, first time ion implanting N-type ion.
It is further improved the RC-IGBT device making method, implementation steps 4) when, first time ion implanting N-type ion
Dosage is 5E14-2E15.
It is further improved the RC-IGBT device making method, implementation steps 4) when, window definition position is injected into boot section
In the geometric center of the back side the RC-IGBT figure.
It is further improved the RC-IGBT device making method, implementation steps 4) when, it defines boot section and injects window area
Account for the 5%-20% of the RC-IGBT device back side gross area.
It is further improved the RC-IGBT device making method, implementation steps 4) when, defining boot section injection window is circle
Shape.
It is further improved the RC-IGBT device making method, implementation steps 6) when, second of ion implanting N-type ion.
It is further improved the RC-IGBT device making method, implementation steps 6) when, second of ion implanting N-type ion
Dosage is 1E11~5E15.
It is further improved the RC-IGBT device making method, implementation steps 7) when, third time ion implanting P-type ion.
It is further improved the RC-IGBT device making method, implementation steps 7) when, third time ion implanting P-type ion
Dosage is 1E11~5E15.
The present invention joined guidance plot structure in the N collector region layout design of RC-IGBT device.Refering to what is shown in Fig. 4, drawing
It leads region and does not do N collector region injection, main purpose is that guidance IGBT enters IGBT conductance modulation state as early as possible, and guidance field should use up
Possible equidistant regular array, can make the current distribution of IGBT more evenly in this way.The RC-IGBT that boot section is added in the present invention is eliminated
The snapback phenomenon of on-state voltage drop, has a distinct increment to RC-IGBT performance.
Detailed description of the invention
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:
Fig. 1 is existing RC-IGBT schematic diagram one.
Fig. 2 is existing RC-IGBT schematic diagram two.
Fig. 3 is a kind of existing bongding structural schematic diagram.
Fig. 4 is RC-IGBT structure schematic diagram of the present invention.
Fig. 5 is RC-IGBT manufacturing method flow diagram of the present invention.
Specific embodiment
RC-IGBT device first embodiment provided by the invention, the front RC-IGBT form each functional areas of the device；It should
The collecting zone that the back side RC-IGBT is formed is arranged in matrix, and the back side RC-IGBT, which is additionally provided with, promotes IGBT to enter conductance modulation state
Collecting zone is not present in boot section, boot section present position, and the boot section is n-type doping.
RC-IGBT device second embodiment provided by the invention, the front RC-IGBT form each functional areas of the device；Ginseng
It examines shown in Fig. 4, the collecting zone which forms is arranged in matrix, and the back side RC-IGBT, which is additionally provided with, promotes IGBT to enter electricity
Lead the N-type boot section of modulation condition.Collecting zone is not present in N-type boot section present position, and the N-type boot section domain is using round, N
Type boot section area is the 5%-20% of the RC-IGBT device back side gross area, and is located at the several of the back side the RC-IGBT figure
What center.
As shown in figure 5, the present invention provides a kind of RC-IGBT device making method first embodiment, including following step
It is rapid:
1) gate MOS structure fabrication is manufactured groove in multicrystalline silicon substrate (substrate is lightly doped in N-type) front
2) multicrystalline silicon substrate Facad structure metallizes；
3) multicrystalline silicon substrate front bongding, which forms protection structure and executes at the multicrystalline silicon substrate back side, is thinned BG；
4) the multicrystalline silicon substrate back side carries out lithographic definition and carries out first time ion implanting formation boot section；
5) removal protection structure；
6) difference lithographic definition in the multicrystalline silicon substrate back side carries out second of ion implanting and forms buffer layer；
7) multicrystalline silicon substrate back side lithographic definition collecting zone carries out third time ion implanting and forms collecting zone；
8) rapid thermal annealing RTA；
9) multicrystalline silicon substrate backside structure metallizes.
The present invention provides a kind of RC-IGBT device making method second embodiment, comprising the following steps:
1) gate MOS structure fabrication is manufactured groove in multicrystalline silicon substrate front
2) multicrystalline silicon substrate Facad structure metallizes；
3) multicrystalline silicon substrate front executes bongding and forms protection structure and execute thinned BG at the multicrystalline silicon substrate back side；
Substrate face bongding is using any implementable technique in the prior art.Refering to what is shown in Fig. 3, a kind of existing
The protection structure that bongding is formed is specifically included that glass substrate (as hard substrate) bongding through adhesive layer Tape
In multicrystalline silicon substrate front.
Glass substrate in the present invention can be the sheet glass of any thickness with consisting of range, with the total of glass
The weight percent of weight indicates.
4) the multicrystalline silicon substrate back side carries out lithographic definition and carries out (the collector short circuit of first time ion implanting formation boot section
Area)；First time ion implanting uses n-type doping implantation dosage for 5E14-2E15；
Refering to what is shown in Fig. 4, collecting zone is not present in boot section present position, the boot section domain is using round, boot section face
Product is the 5%-20% of the RC-IGBT device back side gross area, and is located at the geometric center of the back side the RC-IGBT figure.
5) structure is protected in removal step 3)；For example, making glass substrate, adhesive layer Tape and wafer point by heat treatment
From structure is protected in i.e. removal.
6) multicrystalline silicon substrate back side lithographic definition carries out second of ion implanting and forms buffer layer；Second of ion implanting is adopted
It is 1E11~5E15 with n-type doping implantation dosage.
7) multicrystalline silicon substrate back side lithographic definition collecting zone carries out third time ion implanting collecting zone；Third secondary ion note
Enter to use p-type doping implantation dosage for 1E11~5E15.
8) rapid thermal annealing (RTA)；
9) multicrystalline silicon substrate backside structure metallizes.
Above by specific embodiment and embodiment, invention is explained in detail, but these are not composition pair
Limitation of the invention.Without departing from the principles of the present invention, those skilled in the art can also make many deformations and change
Into these also should be regarded as protection scope of the present invention.
Claims (16)
1. a kind of RC-IGBT device, which forms each functional areas of the device, it is characterised in that: RC-IGBT back
The collecting zone that face is formed is arranged in matrix, and the back side RC-IGBT is additionally provided with the boot section for promoting IGBT to enter conductance modulation state, draws
Leading area present position, there is no collecting zones.
2. RC-IGBT device as described in claim 1, it is characterised in that: the boot section is n-type doping.
3. RC-IGBT device as claimed in claim 2, it is characterised in that: the boot section is located at the back side the RC-IGBT figure
Geometric center.
4. RC-IGBT device as claimed in claim 2, it is characterised in that: the boot section area is RC-IGBT device back
The 5%-20% of the face gross area.
5. RC-IGBT device as claimed in claim 4, it is characterised in that: the figure of the boot section is circle.
6. RC-IGBT device making method described in a kind of claim 1-5 any one, which comprises the following steps:
1) gate MOS structure fabrication is manufactured groove in multicrystalline silicon substrate front
2) multicrystalline silicon substrate Facad structure metallizes；
3) multicrystalline silicon substrate front bongding, which forms protection structure and executes at the multicrystalline silicon substrate back side, is thinned (BG)；
4) the multicrystalline silicon substrate back side carries out lithographic definition and carries out first time ion implanting formation boot section；
5) removal protection structure；
6) difference lithographic definition in the multicrystalline silicon substrate back side carries out second of ion implanting and forms buffer layer；
7) multicrystalline silicon substrate back side lithographic definition collecting zone carries out third time ion implanting and forms collecting zone；
8) rapid thermal annealing (RTA)；
9) multicrystalline silicon substrate backside structure metallizes.
7. RC-IGBT device making method as claimed in claim 6, it is characterised in that: implementation steps 2) when, using glass substrate
Form protection structure.
8. RC-IGBT device making method as claimed in claim 6, it is characterised in that: implementation steps 4) when, the first secondary ion note
Enter N-type ion.
9. RC-IGBT device making method as claimed in claim 8, it is characterised in that: implementation steps 4) when, the first secondary ion note
Entering N-type ion dosage is 5E14-2E15.
10. RC-IGBT device making method as claimed in claim 6, it is characterised in that: implementation steps 4) when, boot section is infused
Enter the geometric center that window definition is located at the back side the RC-IGBT figure.
11. RC-IGBT device making method as claimed in claim 10, it is characterised in that: implementation steps 4) when, define boot section
Injection window area accounts for the 5%-20% of the RC-IGBT device back side gross area.
12. the RC-IGBT device making method as described in claim 111, it is characterised in that: implementation steps 4) when, definition guidance
It is circle that window is injected in area.
13. RC-IGBT device making method as claimed in claim 6, it is characterised in that: implementation steps 6) when, the second secondary ion
Inject N-type ion.
14. RC-IGBT device making method as claimed in claim 13, it is characterised in that: implementation steps 6) when, the second secondary ion
Injection N-type ion dosage is 1E11~5E15.
15. RC-IGBT device making method as claimed in claim 6, it is characterised in that: implementation steps 7) when, third secondary ion
Injecting p-type ion.
16. RC-IGBT device making method as claimed in claim 15, it is characterised in that: implementation steps 7) when, third secondary ion
Injecting p-type ion dose is 1E11~5E15.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910034228.5A CN109830531A (en) | 2019-01-15 | 2019-01-15 | RC-IGBT device and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910034228.5A CN109830531A (en) | 2019-01-15 | 2019-01-15 | RC-IGBT device and its manufacturing method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005019178A1 (en) * | 2005-04-25 | 2006-11-02 | Infineon Technologies Ag | Reverse-conduction insulated gate bipolar transistor (IGBT) has semiconductor body that has cell region formed with n-type areas and p-type areas, in which portions between n-type and p-type areas are formed with different minimum distances |
| CN101877352A (en) * | 2009-04-29 | 2010-11-03 | Abb技术有限公司 | Reverse-conducting semiconductor device |
| CN102097306A (en) * | 2009-12-09 | 2011-06-15 | Abb技术有限公司 | Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants |
| CN102203945A (en) * | 2008-11-05 | 2011-09-28 | Abb技术有限公司 | Reverse-conducting semiconductor device |
| CN104576368A (en) * | 2014-09-23 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Method for forming reverse-conducting IGBT (insulated gate bipolar translator) backside process |
-
2019
- 2019-01-15 CN CN201910034228.5A patent/CN109830531A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005019178A1 (en) * | 2005-04-25 | 2006-11-02 | Infineon Technologies Ag | Reverse-conduction insulated gate bipolar transistor (IGBT) has semiconductor body that has cell region formed with n-type areas and p-type areas, in which portions between n-type and p-type areas are formed with different minimum distances |
| CN102203945A (en) * | 2008-11-05 | 2011-09-28 | Abb技术有限公司 | Reverse-conducting semiconductor device |
| CN101877352A (en) * | 2009-04-29 | 2010-11-03 | Abb技术有限公司 | Reverse-conducting semiconductor device |
| CN102097306A (en) * | 2009-12-09 | 2011-06-15 | Abb技术有限公司 | Method for producing a semiconductor device using laser annealing for selectively activating implanted dopants |
| CN104576368A (en) * | 2014-09-23 | 2015-04-29 | 上海华虹宏力半导体制造有限公司 | Method for forming reverse-conducting IGBT (insulated gate bipolar translator) backside process |
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Application publication date: 20190531 |