CN109801923A - 一种薄膜晶体管及其制备方法、阵列基板、显示装置 - Google Patents
一种薄膜晶体管及其制备方法、阵列基板、显示装置 Download PDFInfo
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Abstract
本发明提供一种薄膜晶体管及其制备方法、阵列基板、显示装置,属于显示技术领域,其可解决现有的LTPS中多晶硅容易被过刻的问题。本发明的薄膜晶体管中包括多层绝缘层,其中,至少一层设于低温多晶硅层上方的绝缘层采用树脂材料形成,后续的在该树脂材料中形成过孔时,无需干刻工艺,采用曝光显影的方法即可,可以有效避免该绝缘层下方的低温多晶硅层被过刻。本发明的薄膜晶体管的制备方法还可以增加漏极与低温多晶硅材料层的接触面积和均一性,提高电导率;第二绝缘层的第二过孔与第一绝缘层的第一过孔的曝光显影工艺可以一步完成,大幅减少产品的生产周期,提高设备产能。
Description
技术领域
本发明属于显示技术领域,具体涉及一种薄膜晶体管及其制备方法、阵列基板、显示装置。
背景技术
随着人们生活品质的提高,用户对显示屏的显示亮度、显示角度、以及低能耗都有了更高的要求,例如:在光线比较充足的户外或场所,需要显示屏有更清晰的显示效果,就需要显示屏有更高的亮度;工作生活中需要在不同姿势不同角度状态下都能有清晰的显示效果,就需要显示屏有更广的视角;同样为了更久的使用时间,也需要显示屏有更低的能耗。
低温多晶硅技术(Low Temperature Poly Silicon,LTPS)能降低显示屏的能耗,令显示屏更轻薄,LTPS是由非晶硅(a-Si)薄膜通过“低温”结晶化工艺形成多晶硅(p-Si)的技术。
发明人发现现有技术中至少存在如下问题:由于a-Si在转变为P-Si过程,只有表面50埃左右的a-Si变为了P-Si,P-Si厚度很薄,在后续工艺干刻过程中,由于干刻技术的限制,经常会出现过刻,导致P-Si被刻掉或刻薄,造成SD与P-Si的接触面积变小或接触不均匀。
发明内容
本发明针对现有的LTPS中P-Si容易被过刻的问题,提供一种薄膜晶体管及其制备方法、阵列基板、显示装置。
解决本发明技术问题所采用的技术方案是:
一种薄膜晶体管,包括衬底,以及设于所述衬底上的低温多晶硅层、多层绝缘层、栅极;
其中,至少一层绝缘层由树脂材料构成,且设于所述低温多晶硅层远离衬底的一侧的绝缘层设有过孔。
优选的是,所述绝缘层包括第一绝缘层,所述第一绝缘层的过孔为第一过孔;其中,所述第一绝缘层设置于所述低温多晶硅层与所述栅极之间,所述栅极设于所述第一绝缘层远离衬底的一侧。
优选的是,所述绝缘层还包括第二绝缘层,所述第二绝缘层设于所述栅极远离衬底的一侧,且所述第二绝缘层设有第二过孔。
优选的是,所述薄膜晶体管还包括:
源极和漏极,所述源极和漏极设于所述第二绝缘层远离衬底的一侧,且所述源极和漏极通过第一过孔、第二过孔与低温多晶硅层接触。
优选的是,所述第一过孔至衬底上的至少部分正投影与第二过孔至衬底上的至少部分正投影重合。
优选的是,所述薄膜晶体管还包括:平坦层及公共电极,所述平坦层设于源极和漏极与所述公共电极之间,所述平坦层设于所述源极和漏极离衬底的一侧,且所述漏极所在位置处的平坦层中设有第三过孔,所述公共电极通过所述第三过孔与所述漏极连接。
优选的是,所述树脂材料包括聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚氨酯(PU)、聚酰亚胺(PI)中的任意一种或几种。
优选的是,在垂直于所述衬底的方向上,所述绝缘层的尺寸为1.5μm~3.0μm。
优选的是,所述衬底与所述低温多晶硅层之间设有缓冲层。
本发明还提供一种阵列基板,包括呈阵列状分布的多个上述的薄膜晶体管。
本发明还提供一种显示装置,包括上述的阵列基板。
本发明还提供一种薄膜晶体管的制备方法,包括以下步骤:
在衬底上形成低温多晶硅材料层;
在低温多晶硅层远离衬底的一侧形成树脂层,并在所述树脂层中设置过孔得到绝缘层;
形成第一金属层,并图案化第一金属层得到薄膜晶体管的栅极。
优选的是,所述形成树脂层,并在所述树脂层中设置过孔得到绝缘层,包括以下步骤:
涂覆树脂材料形成有机膜层;
对有机膜层进行第一次固化;
对完成上述步骤的有机膜层进行曝光显影形成过孔;
对完成上述步骤的有机膜层进行第二次固化得到绝缘层。
优选的是,所述第一次固化是在真空度为20Pa~100Pa,加热温度为80℃~130℃的条件下进行90s-140s;所述第二次固化是在常压加热温度为200℃~250℃的条件下进行40min~120min。
本发明的薄膜晶体管中包括多层绝缘层,其中,至少一层设于低温多晶硅层上方的绝缘层采用树脂材料形成,后续的在该树脂材料中形成过孔时,无需干刻工艺,采用曝光显影的方法即可,这样可以有效避免该绝缘层下方的低温多晶硅层被过刻。本发明的薄膜晶体管的制备方法可以有效避免绝缘层下方的低温多晶硅层被过刻,同时可以增加漏极与低温多晶硅材料层的接触面积和均一性,提高电导率;第二绝缘层的第二过孔与第一绝缘层的第一过孔的曝光显影工艺可以一步完成,可大幅减少产品的生产周期,提高设备产能。
附图说明
图1为本发明的实施例1的薄膜晶体管的结构示意图;
图2-3为本发明的实施例2的薄膜晶体管的结构示意图;
图4为本发明的实施例3的薄膜晶体管的制备流程示意图;
其中,附图标记为:1、衬底;2、低温多晶硅层;21、掺杂区;3、绝缘层;31、第一绝缘层;32、第二绝缘层;4、栅极;5、过孔;51、第一过孔;52、第二过孔;53、第三过孔;61、源极;62、漏极;7、平坦层;81、公共电极;82、像素电极;91、缓冲层;92、钝化层。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1:
本实施例提供一种薄膜晶体管,如图1所示,包括衬底1,设于所述衬底1上的低温多晶硅层2、多层绝缘层3、栅极4;其中,至少一层绝缘层由树脂材料构成,且设于所述低温多晶硅层2远离衬底的一侧的绝缘层设有过孔5。
本实施例的薄膜晶体管中包括多层绝缘层3,其中,至少一层设于所述低温多晶硅层2上方的绝缘层3采用树脂材料形成,后续的在该树脂材料中形成过孔5时,无需干刻工艺,采用曝光显影的方法即可,这样可以有效避免该绝缘层下方的低温多晶硅层2被过刻。
实施例2:
本实施例提供一种薄膜晶体管,如图2-3所示,包括衬底1,以及设于所述衬底1上方的低温多晶硅层2、由树脂材料构成的第一绝缘层31、栅极4;具体的,第一绝缘层31设于所述低温多晶硅层2远离衬底的一侧,所述栅极4设于所述第一绝缘层31远离衬底的一侧;其中,第一绝缘层31设有第一过孔51。
本实施例中的衬底1可以采用玻璃等透明材料制成,具体的,本实施例对应的附图2中示出的低温多晶硅层2作为有源层,其中部分位置处掺杂有磷或硼,形成掺杂区21,以增强其电子特性。其中的栅极4采用钼、钼铌合金、铝、铝钕合金、钛或铜中的至少一种形成。其中,本实施例低温多晶硅层2远离衬底的一侧的第一绝缘层31也可称为层间绝缘层,其采用树脂材料形成,这样在该树脂材料中形成过孔时,不再使用干刻工艺,采用曝光显影的方法即可形成第一过孔51,有效避免第一绝缘层31下方的低温多晶硅层2被过刻。
作为本实施例中的一种优选实施方案,所述树脂材料包括透明的聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚氨酯(PU)、聚酰亚胺(PI)中的任意一种或几种。
具体的,本实施例中的透明树脂材料选自透明的聚合物材料,由于该材料透明,因此不影响产品的透过率。此外,上述材料在形成过孔时,选择对应的掩膜版采用曝光显影工艺即可,减少一步干刻,节约工艺成本。
作为本实施例中的一种优选实施方案,在垂直于所述衬底1的方向上,所述绝缘层的尺寸为1.5μm~3.0μm。
也就是说,参见图2,第一绝缘层31的厚度H1在1.5μm~3.0μm范围内。即树脂材料的厚度H1大于1.5μm的作用是使得树脂材料上方的栅极4与下方的低温多晶硅层2结构之间达到一定的绝缘性能;同时,树脂材料的厚度H1不超过3.0μm,这样不无谓的增加产品自身厚度,更适用于超薄显示。
在一个实施例中,所述衬底1与所述低温多晶硅层2之间设有缓冲层91。
参见本实施例对应的附图2,在衬底1与低温多晶硅层2之间增设缓冲层91,缓冲层91可以是单层结构或多个子层的叠层结构,缓冲层91采用硅氧化物或硅氮化物形成。
在一个实施例中,所述绝缘层还包括第二绝缘层32,所述第二绝缘层32设于所述栅极4远离衬底的一侧,且所述第二绝缘层32设有第二过孔52。
在一个实施例中,所述薄膜晶体管还包括源极61和漏极62,所述源极61和漏极62设于所述第二绝缘层32上方,且所述源极61和漏极62通过第一过孔51、第二过孔52与低温多晶硅层2接触。
参见本实施例对应的附图3,在栅极4上设有第二绝缘层32,也可称为栅极4绝缘层,第二绝缘层32也采用透明树脂材料形成,同样,采用曝光显影的方法即可形成第二过孔52,有效避免低温多晶硅层2被过刻。此外,由于第二绝缘层32的第二过孔52与第一绝缘层31的第一过孔51相对应,本实施例将第二绝缘层32也采用透明树脂材料形成的优点是:第一过孔51与第二过孔52采用一步曝光工艺形成,节省产品成本。
可以理解的是,第二绝缘层32也可以不采用透明树脂材料形成而是采用氮化硅氧化硅材料,即仅仅靠近低温多晶硅层2的第一绝缘层31采用透明树脂材料形成,这样也可以避免低温多晶硅层2被过刻,但是这样的缺点是:第一绝缘层31与第二绝缘层32采用不同工艺,第一过孔51与第二过孔52不能同步曝光形成,相较于一步曝光的方式增加了产品的工艺成本。
作为本实施例的一种优选方案,所述第一过孔至衬底上的至少部分正投影与第二过孔至衬底上的至少部分正投影重合。
也就是说,在垂直于衬底的方向上,第二绝缘层32的第二过孔52与第一绝缘层31的第一过孔51相对应,这样当采用曝光显影工艺形成过孔时,第二过孔52与第一过孔51可以一步完成,节省产品工艺成本。
在一个实施例中,所述薄膜晶体管还包括:平坦层7及公共电极81,平坦层7设于所述源极61和漏极62远离衬底的一侧,且所述漏极所在位置处的平坦层7设有第三过孔53,所述公共电极81设置在所述平坦层7上,且通过所述第三过孔53与所述漏极62连接。
在本实施例对应的附图3中,显示了形成于源极61和漏极62远离衬底的一侧的平坦层7,平坦层7的第三过孔53对应漏极62的位置,平坦层7上的公共电极81通过第三过孔53与漏极62连接。此外,附图3中,还显示了钝化层92上设有像素电极82,且像素电极82通过钝化层92的过孔与公共电极81连接。在本实施例显示的附图所示各结构的大小、厚度等仅为示意。在工艺实现中,各结构层在衬底1上的投影面积可以相同,也可以不同,可以通过刻蚀工艺实现所需的各结构层投影面积;同时,附图所示结构也不限定各结构层的几何形状,例如可以是附图所示的矩形、梯形,也可以是其它刻蚀所形成的形状,同样可通过刻蚀实现。
实施例3:
本实施例提供一种薄膜晶体管的制备方法,包括以下步骤:
S01a、采用硅氧化物或硅氮化物在衬底1上形成缓冲层91,具体的,衬底1采用玻璃等透明材料制成、且经过预先清洗。缓冲层91可以是单层结构或多个子层的叠层结构。
S01b、在完成上述步骤的衬底1上形成低温多晶硅材料层;具体的,先在衬底1上沉积非晶硅a-Si,然后采用“低温”结晶化工艺对非晶硅进行晶化形成多晶硅P-Si,其中,表面至少50埃左右的a-Si变为了P-Si。准分子激光晶化方式、金属诱导晶化方式为两种低温多晶硅的方法,是较为常用的把非晶硅转变为多晶硅的方法。然而,本发明将非晶硅转变为多晶硅的方法,并不限制于采用低温多晶硅的方法,只要能够将有源层非晶硅转变为所需的多晶硅薄膜就可以。
S02、在完成上述步骤的衬底1上形成透明树脂材料,并在所述透明树脂材料中设置第一过孔51得到第一绝缘层31。
具体的,S02包括以下步骤:
S02a、涂覆透明树脂形成厚度范围一般为1.5um~3.0um的第一有机膜层;所述透明树脂包括聚甲基丙烯酸甲酯(PMMA)、聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚氨酯(PU)、聚酰亚胺(PI)中的任意一种或几种。需要说明的是,涂覆的透明树脂可以是多层,也可以是单层,可以是上述例举的几种聚合物的预聚体,也可以是聚合物原料聚合物的单体的混合溶液。本实施例中以PMMA预聚体为例进行后续操作步骤的详细说明,其它透明树脂的具体情况与PMMA类似。
S02b、在真空度为20~100Pa,加热温度为80~130℃的条件下进行对第一PMMA有机膜层进行90s-140s固化;
S02c、对完成上述步骤的第一PMMA有机膜层进行曝光显影形成第一过孔51;该步骤中的曝光量为150~300mj。
S02d、对完成上述步骤的第一有机膜层进行第二次固化得到第一绝缘层31。具体的,第二次固化是在常压加热温度为200℃~250℃的条件下进行40min~120min。
S03、形成第一金属层,并图案化第一金属层得到薄膜晶体管的栅极4。其中,栅极的材料包括但不仅限于Al,Mo,Cu,Ag、Cr、Ti、AlNi、MoTi等金属材料,料中的一种或者多种。所述栅极的厚度为1500~6000埃。
S04、在完成上述步骤的衬底1上再次形成透明树脂材料,并在所述透明树脂材料中设置第二过孔52得到第二绝缘层32。
具体的,S04包括以下步骤:
S04a、涂覆透明树脂形成厚度范围一般为1.5um~3.0um的第二PMMA有机膜层;其中,涂覆的透明树脂可以是多层,也可以是单层,可以是聚合物的预聚体,也可以是聚合物原料聚合物的单体的混合溶液。S04b、在真空度为20~100Pa,加热温度为80~130°的条件下进行对第二PMMA有机膜层进行第一次固化;
S04c、对完成上述步骤的第二PMMA有机膜层进行曝光显影形成第二过孔52;该步骤中的曝光量为150~300mj。
S04d、对完成上述步骤的第二有机膜层进行第二次固化得到第二绝缘层32。具体的,第二次固化是在常压加热温度为200℃~250℃的条件下进行40min~120min。
需要说明的是,第二绝缘层32的第二过孔52与第一绝缘层31的第一过孔51相对应,S02c与S04c的曝光显影工艺可以一步完成,节省产品工艺成本。
S05、在第二绝缘层32上形成源极61和漏极62,具体的,源极61、漏极62采用钼、钼铌合金、铝、铝钕合金、钛或铜中的至少一种形成。更具体的,可以采用溅射方式、热蒸发方式、等离子体增强化学气相沉积(Plasma Enhanced Vapor Deposition:简称PECVD)方式、低压化学气相沉积(Low Pressure Chemical Vapor Deposition:简称LPCVD)方式、大气压化学气相沉积(Atmospheric Pressure Chemical Vapor Deposition:简称APCVD)方式或电子回旋谐振化学气相沉积(Electron Cyclotron Resonance Chemical VaporDeposition:简称ECR-CVD)方式形成源漏金属电极膜。然后,通过采用半色调掩模(HalfTone Mask,简称HTM)或灰色调掩模(Gray Tone Mask,简称GTM),通过构图工艺(成膜、曝光、显影、湿法刻蚀或干法刻蚀),同时形成包括源极61和漏极62的图形。
S06、在源极61和漏极62上形成平坦层7,在对应所述漏极62形成第三过孔53,公共电极81通过第三过孔53与漏极62电连接。然后在平坦层7上形成公共电极81。其中,形成平坦层7的作用是:使得产品的上表面平坦化,以便在平坦的表面上沉积电极层。
S07、在公共电极81上形成钝化层92,并在钝化层92形成第三过孔53。其中,钝化层92为单层结构或多个子层的叠层结构,采用硅氧化物、硅氮化物、铪氧化物或铝氧化物形成。
S08、在钝化层92上形成像素电极82,像素电极82通过钝化层92的过孔与公共电极81连接。
本实施例中以PMMA透明树脂作为绝缘层例进行了详细说明,其它透明树脂的具体情况与PMMA类似,不再一一例举。
本实施例的制备方法中绝缘层采用透明树脂材料形成,绝缘层的过孔无需干刻工艺,而是采用曝光显影的方法即可,这样可以有效避免绝缘层下方的低温多晶硅层被过刻,同时可以增加漏极与低温多晶硅材料层的接触面积和均一性,提高电导率;第二绝缘层的第二过孔与第一绝缘层的第一过孔的曝光显影工艺可以一步完成,可大幅减少产品的生产周期,提高设备产能。
实施例4:
本实施例提供一种阵列基板,包括呈阵列状分布的多个上述的薄膜晶体管。
实施例5:
本实施例提供了一种显示装置,其包括上述任意一种阵列基板。所述显示装置可以为:液晶显示面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
显然,上述各实施例的具体实施方式还可进行许多变化;例如:各工艺步骤的具体参数可以根据需要进行调整,不同产品的具体步骤可以根据实际情况进行改变。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (13)
1.一种薄膜晶体管,其特征在于,包括衬底,以及设于所述衬底上的低温多晶硅层、多层绝缘层、栅极;
其中,至少一层绝缘层由树脂材料构成,且设于所述低温多晶硅层远离衬底的一侧的绝缘层设有过孔。
2.根据权利要求1所述的薄膜晶体管,其特征在于,所述绝缘层包括第一绝缘层,所述第一绝缘层的过孔为第一过孔;其中,所述第一绝缘层设置于所述低温多晶硅层与所述栅极之间,所述栅极设于所述第一绝缘层远离衬底的一侧。
3.根据权利要求2所述的薄膜晶体管,其特征在于,所述绝缘层还包括第二绝缘层,所述第二绝缘层设于所述栅极远离衬底的一侧,且所述第二绝缘层设有第二过孔。
4.根据权利要求3所述的薄膜晶体管,其特征在于,所述薄膜晶体管还包括:
源极和漏极,所述源极和漏极设于所述第二绝缘层远离衬底的一侧,且所述源极和漏极通过第一过孔、第二过孔与低温多晶硅层接触。
5.根据权利要求4所述的薄膜晶体管,其特征在于,所述第一过孔至衬底上的至少部分正投影与第二过孔至衬底上的至少部分正投影重合。
6.根据权利要求4所述的薄膜晶体管,其特征在于,所述薄膜晶体管还包括:平坦层及公共电极,所述平坦层设于源极和漏极与所述公共电极之间,所述平坦层设于所述源极和漏极远离衬底的一侧,且所述漏极所在位置处的平坦层中设有第三过孔,所述公共电极通过所述第三过孔与所述漏极连接。
7.根据权利要求1所述的薄膜晶体管,其特征在于,所述树脂材料包括聚甲基丙烯酸甲酯、聚对苯二甲酸乙二醇酯、聚碳酸酯、聚氨酯、聚酰亚胺中的任意一种或几种。
8.根据权利要求1所述的薄膜晶体管,其特征在于,在垂直于所述衬底的方向上,所述绝缘层的尺寸为1.5μm~3.0μm。
9.一种阵列基板,其特征在于,包括呈阵列状分布的多个薄膜晶体管,所述薄膜晶体管包括权利要求1-8任一项所述的薄膜晶体管。
10.一种显示装置,其特征在于,包括权利要求9所述的阵列基板。
11.一种薄膜晶体管的制备方法,其特征在于,包括以下步骤:
在衬底上形成低温多晶硅层;
在低温多晶硅层远离衬底的一侧形成树脂层,并在所述树脂层中设置过孔得到绝缘层;
形成第一金属层,并图案化第一金属层得到薄膜晶体管的栅极。
12.根据权利要求11所述的薄膜晶体管的制备方法,其特征在于,所述形成树脂层,并在所述树脂层中设置过孔得到绝缘层,包括以下步骤:
涂覆树脂材料形成有机膜层;
对有机膜层进行第一次固化;
对完成上述步骤的有机膜层进行曝光显影形成过孔;
对完成上述步骤的有机膜层进行第二次固化得到绝缘层。
13.根据权利要求12所述的薄膜晶体管的制备方法,其特征在于,所述第一次固化是在真空度为20Pa~100Pa,加热温度为80℃~130℃的条件下进行90s-140s;所述第二次固化是在常压加热温度为200℃~250℃的条件下进行40min~120min。
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