CN109786479A - A kind of preparation process of high power half component - Google Patents
A kind of preparation process of high power half component Download PDFInfo
- Publication number
- CN109786479A CN109786479A CN201811492778.3A CN201811492778A CN109786479A CN 109786479 A CN109786479 A CN 109786479A CN 201811492778 A CN201811492778 A CN 201811492778A CN 109786479 A CN109786479 A CN 109786479A
- Authority
- CN
- China
- Prior art keywords
- cell piece
- component
- resulting
- group
- preparation process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Sealing Battery Cases Or Jackets (AREA)
Abstract
The invention discloses a kind of preparation process of high power half component, the preparation process the following steps are included: cell piece half preparation；The preparation of cell piece half string；The preparation of cell piece half group；The preparation of half component；EL test；Laminating packaging；It frames up, attaching wire box；Secondary EL test；The present invention first connects cell piece half to obtain cell piece half string, cell piece half is obtained into cell piece half group in series and parallel again, using such processing method, the resistance of component internal can be effectively reduced, to reduce the heating loss of component internal, so that component, under the precursor that output power is promoted, the component output voltage and electric current and traditional components approach；Different electric connection modes may be implemented by lead-out wire for cell piece half group, to realize under the premise of not reducing component power density, so that half component can be flexibly applied to a plurality of types of photovoltaic systems.
Description
Technical field
The present invention relates to technical field of photovoltaic modules, the preparation process of specifically a kind of high power half component.
Background technique
Solar battery is a kind of semiconductor devices that solar energy is converted into electric energy, since solar energy is cleaned without dirt
It contaminates and is a kind of renewable energy, so in the case of current energy shortage, before solar battery has wide development
Scape.It generates electricity with enabling solar battery sheet long time stability, needs multiple solar battery sheets being assembled into photovoltaic group
Part, and it is assembled into photovoltaic system.Typically photovoltaic module includes membrane photovoltaic component and Crystalline Silicon PV Module, wherein crystalline silicon
Photovoltaic module production technology is mature, and relative inexpensiveness dominates on the market.
The photovoltaic module made at present generally takes pure series circuit, i.e., the series connection of each column solar battery sheet is too in circuit
Positive energy battery strings, then solar battery string is connected in series by conducting wire, as present in each solar battery sheet itself
Resistance is bigger, then power consumed by self-resistance will be present in bigger namely each solar battery sheet itself
Resistance will cause bigger power loss, correspondingly, will reduce the output power of each photovoltaic cell, to can reduce
How the output power of the subsequent photovoltaic module prepared reduces resistance present in solar battery sheet itself, with reduce because
Power caused by resistance is technical staff's technical problem urgently to be resolved.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation processes of high power half component, to solve in the prior art ask
Topic.
To achieve the above object, the invention provides the following technical scheme:
A kind of preparation process of high power half component, the preparation process the following steps are included:
(1) preparation of cell piece half；
(2) preparation of cell piece half string；
(3) preparation of cell piece half group；
(4) preparation of half component；
(5) EL tests；
(6) laminating packaging；
(7) it frames up, attaching wire box；
(8) secondary EL test.
As optimization, a kind of preparation process of high power half component, the preparation process the following steps are included:
(1) full wafer cell piece is cut by laser, is broken into two with one's hands, obtain cell piece half；
(2) the resulting cell piece half series connection of step (1) is welded into cell piece half string；
(3) the resulting cell piece half of step (2) is connected in series and parallel, obtains cell piece half group；
(4) glue film, the resulting cell piece half group of step (4), glue film and cover board are successively laid on backboard, complete lamination
Operation obtains half component；
(5) one times EL is tested, and whether the cell piece half in the resulting half component of checking step (4) has crack piece, and
Reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, is first vacuumized, then keep lower room to vacuumize, on
Room inflation, then heating, pressure maintaining make glue film softening that solar battery string to bond together with backboard and cover board；
(7) frame, thereto are installed to the resulting half component of step (6) additional；
(8) secondary EL test, the electrical property of the resulting half component of detecting step (7).
As optimization, a kind of preparation process of high power half component, the preparation process the following steps are included:
(1) it is parallel at full wafer cell piece main gate line half and is cut by laser using optical fiber laser edge, then
It breaks into two with one's hands, obtains equal-sized cell piece half；Edge is parallel to the battery that full wafer cell piece main gate line direction is cut
Piece half, so the resistance of each cell piece half is less than the resistance of full wafer cell piece, having, which reduces cell piece, was generating electricity
Internal loss in journey, remarkable in economical benefits, while the cutting mode avoid the main gate line of metallic silver material in cutting technique
In caused by short circuit problem；
(2) N number of step (1) resulting cell piece half series connection is welded into cell piece half string using welding, N be greater than
Integer equal to 2, and M group cell piece half string is obtained according to the method described above, M is the integer more than or equal to 2；
(3) the resulting M group cell piece half of step (2) is connected in series and parallel, obtains cell piece half group, cell piece half
Group has lead-out wire, is electrically connected between cell piece half group by lead-out wire；Each cell piece half is by full wafer cell piece
Obtained from cutting, so the resistance of each cell piece half is less than the resistance of full wafer cell piece；And by cell piece half
The equivalent resistance parallel with one another for obtaining cell piece half group of going here and there can further decrease, to reduce the function as caused by self-resistance
Rate loss, to improve the output power of half component；Since every group of cell piece half group all has one group of lead-out wire, cell piece half
Different electric connection modes may be implemented by lead-out wire for piece group, and the half component of different output voltages can be obtained, thus real
Under the premise of not reducing component power density now, so that half component can be flexibly applied to a plurality of types of photovoltaic systems；
(4) glue film, the resulting cell piece half group of step (4), glue film and cover board, the extraction are successively laid on backboard
Line extends to the outside of backboard and cover board, completes lamination operation, obtains half component；
(5) it is imaged by infrared camera, whether the cell piece half in the resulting half component of checking step (4) has crack
Piece, and reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, first vacuumizes, makes pressure-in laminating machine
1MPa maintains 20-35min, then vacuumizes the lower room of laminating machine, upper chamber inflation, makes chamber pressure-on laminating machine
0.6MPa, lower chamber pressure are -1MPa, maintain 15-25min, continue to vacuumize the lower room of laminating machine, upper chamber inflation, make upper chamber
Pressure is -0.3MPa, lower chamber pressure is -1MPa, maintains 10-15min, continues to vacuumize the lower room of laminating machine, upper chamber inflation,
Make chamber pressure -0.2MPa on laminating machine, lower chamber pressure -1MPa, maintains 10-15min, temperature is then risen to 140-155 DEG C,
Pressure is to maintain 30-40min under -0.5~-0.8MPa in laminating machine, makes glue film softening by cell piece half group and backboard and lid
Plate bonds together；Lower room is carried out to laminating machine to vacuumize, upper chamber inflation, make to lead between cell piece half group and backboard and cover board
The closer of glue film pressure is crossed, prevents cell piece half group from shifting, the stage is heated in the pressure maintaining of lamination, by adjusting lamination pressure three times
Power and retention time enable glue film more effectively to fill the gap between backboard and cover board and cell piece half group, prevent half
Piece component generates starved and bubble, softens glue film, cell piece half group is bonded together with backboard and cover board；
(7) aluminum alloy frame, thereto, the cell piece half group are installed to the resulting half component of step (6) additional
Lead-out wire be electrically connected with terminal box；
(8) secondary EL test is carried out to the resulting half component of step (7), is detected using anti-exposure camera, examined
Survey the electrical property of step (7) resulting half component.It is detected using anti-exposure camera, it is not necessary that half component to be put into secretly
Box, then detected, process can be greatlyd save, production capacity is improved.
As optimization, it is cut by laser in step (1) along full wafer cell piece main gate line half, in same position
Cutting 2-8 times, depth of cut are the 50-70% of cell piece thickness.When depth of cut is less than the 50% of cell piece thickness, it is not easy
It breaks into two with one's hands, will lead to the raising of cell piece breakage rate, when depth of cut is greater than the 70% of cell piece thickness, be easy to cause cell piece P-
N knot is destroyed, so as to cause the failure of cell piece area.
As optimization, glue film is any one in EVA adhesive film, PVB glue film, organic silica gel or POE film in step (4).
As optimization, laying glue film with a thickness of 0.2-0.5mm in step (4).The thickness of glue film is too thick, it may appear that excessive glue
Phenomenon, thickness is too thin, can make to bond leakiness between cell piece half group and backboard and cover board, it may appear that bubble, through repeatedly real
Verify it is bright, it is best when adhesive film is with a thickness of 0.2-0.5mm, can both make to bond between cell piece half group and backboard and cover board close
It is real, and be not in bubble, improve assembly quality.
As optimization, step (4) dorsulum and cover board are the ultra-clear glasses with a thickness of 2.5-3.5mm.Ultra-clear glasses
Light transmittance has higher reflectivity, while the radiation of energy ultraviolet resistance 91% or more, to infrared light；Tempered glass intensity resists
Curved intensity, impact strength are big, also improve safety while improving intensity；Tempered glass large carrying capacity improves easily
Fragility matter significantly reduces the injury to human body；Tempered glass has good thermal stability, and resistance to thermal shocks is strong, right
Prevent thermal breakage from having obvious effects on.Thickness of glass is 2.5-3.5mm, reduces anaclasis, reflection path, reduces the saturating energy of light
Loss improves the utilization rate of light, improves component power.
As optimization, the material of aluminum alloy frame is 6061 aluminium alloys or 6063 aluminium alloys in step (7).Aluminium alloy has
The advantages that density is small, specific strength is high, corrosion resistance is good, the half component made is lighter, is easily installed.
Compared with prior art, the beneficial effects of the present invention are:
First is that edge is parallel to full wafer cell piece main gate line direction in a kind of preparation process of high power half component of the present invention
The resistance of the cell piece half cut, each cell piece half is less than the resistance of full wafer cell piece, and having reduces
Internal loss of the cell piece in power generation process, remarkable in economical benefits, while the cutting mode avoids the master of metallic silver material
Grid line in cutting technique caused by short circuit problem；
Second is that each cell piece half is by full wafer battery in a kind of preparation process of high power half component of the present invention
Obtained from piece cutting, so the resistance of each cell piece half is less than the resistance of full wafer cell piece；And by cell piece half
The piece string equivalent resistance parallel with one another for obtaining cell piece half group can further decrease, to reduce as caused by self-resistance
Power loss, to improve the output power of half component；One group of lead-out wire is all had additionally, due to every group of cell piece half group, electricity
Different electric connection modes may be implemented by lead-out wire for pond piece half group, and the half component of different output voltages can be obtained,
To realize under the premise of not reducing component power density, so that half component can be flexibly applied to a plurality of types of photovoltaic systems
System.
Third is that first connecting cell piece half to obtain cell piece in a kind of preparation process of high power half component of the present invention
Half string, then cell piece half is obtained into cell piece half group in series and parallel, group can be effectively reduced using such processing technology
Resistance inside part, to reduce the heating loss of component internal, so that component is under the precursor that output power is promoted, the component
Output voltage and electric current and traditional components are close.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical scheme in the embodiment of the invention is clearly and completely described,
Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based in the present invention
Embodiment, every other embodiment obtained by those of ordinary skill in the art without making creative efforts, all
Belong to the scope of protection of the invention.
Embodiment 1:
A kind of preparation process of high power half component, the preparation process the following steps are included:
(1) it is parallel at full wafer cell piece main gate line half and is cut by laser using optical fiber laser edge, same
One position is cut 2 times, and depth of cut is the 50% of cell piece thickness, is then broken into two with one's hands, is obtained equal-sized cell piece half；
(2) the resulting cell piece half of 2 steps (1) is connected using welding and is welded into cell piece half string, and according to
The above method obtains 2 groups of cell piece half strings；
(3) the resulting 2 groups of cell piece half of step (2) are connected in series and parallel, obtains cell piece half group, cell piece half
Group has lead-out wire, is electrically connected between cell piece half group by lead-out wire；
(4) EVA adhesive film, the resulting cell piece half group of step (4), glue film and cover board, laying are successively laid on backboard
EVA adhesive film with a thickness of 0.2-0.5mm, backboard and cover board are the ultra-clear glasses with a thickness of 2.5mm, and cell piece half group has
Lead-out wire, lead-out wire extend to the outside of backboard and cover board, complete lamination operation, obtain half component；
(5) it is imaged by infrared camera, whether the cell piece half in the resulting half component of checking step (4) has crack
Piece, and reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, first vacuumizes, makes pressure-in laminating machine
1MPa, maintain 20min, then the lower room of laminating machine is vacuumized, upper chamber inflation, make chamber pressure -0.6MPa on laminating machine, under
Chamber pressure is -1MPa, maintains 15min, continues to vacuumize the lower room of laminating machine, upper chamber inflation, makes chamber pressure -
0.3MPa, lower chamber pressure are -1MPa, maintain 10min, continue to vacuumize the lower room of laminating machine, upper chamber inflation, make on laminating machine
Chamber pressure -0.2MPa, lower chamber pressure -1MPa, maintain 10min, temperature is then risen to 140 DEG C, in laminating machine pressure be -
Under 0.5MPa, 30min is maintained, makes glue film softening that cell piece half group to bond together with backboard and cover board；
(7) frame of 6061 aluminum alloy materials, thereto, cell piece are installed additional to the resulting half component of step (6)
The lead-out wire of half group is electrically connected with terminal box；
(8) secondary EL test is carried out to the resulting half component of step (7), is detected using anti-exposure camera, examined
Survey the electrical property of step (7) resulting half component.
Embodiment 2:
A kind of preparation process of high power half component, the preparation process the following steps are included:
(1) it is parallel at full wafer cell piece main gate line half and is cut by laser using optical fiber laser edge, same
One position is cut 3 times, and depth of cut is the 55% of cell piece thickness, is then broken into two with one's hands, is obtained equal-sized cell piece half；
(2) the resulting cell piece half of 4 steps (1) is connected using welding and is welded into cell piece half string, and according to
The above method obtains 4 groups of cell piece half strings；
(3) the resulting 4 groups of cell piece half of step (2) are connected in series and parallel, obtains cell piece half group, cell piece half
Group has lead-out wire, is electrically connected between cell piece half group by lead-out wire；
(4) organic silica gel, the resulting cell piece half group of step (4), glue film and cover board, laying are successively laid on backboard
Organic silica gel with a thickness of 0.3mm, backboard and cover board are the ultra-clear glasses with a thickness of 2.8mm, and cell piece half group, which has, draws
Outlet, lead-out wire extend to the outside of backboard and cover board, complete lamination operation, obtain half component；
(5) it is imaged by infrared camera, whether the cell piece half in the resulting half component of checking step (4) has crack
Piece, and reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, first vacuumizes, makes pressure-in laminating machine
1MPa, maintain 22min, then the lower room of laminating machine is vacuumized, upper chamber inflation, make chamber pressure -0.6MPa on laminating machine, under
Chamber pressure is -1MPa, maintains 18min, continues to vacuumize the lower room of laminating machine, upper chamber inflation, makes chamber pressure -
0.3MPa, lower chamber pressure are -1MPa, maintain 11min, continue to vacuumize the lower room of laminating machine, upper chamber inflation, make on laminating machine
Chamber pressure -0.2MPa, lower chamber pressure -1MPa, maintain 11min, temperature is then risen to 142 DEG C, in laminating machine pressure be -
Under 0.6MPa, 32min is maintained, makes glue film softening that cell piece half group to bond together with backboard and cover board；
(7) frame of 6063 aluminum alloy materials, thereto, cell piece are installed additional to the resulting half component of step (6)
The lead-out wire of half group is electrically connected with terminal box；
(8) secondary EL test is carried out to the resulting half component of step (7), is detected using anti-exposure camera, examined
Survey the electrical property of step (7) resulting half component.
Embodiment 3:
A kind of preparation process of high power half component, the preparation process the following steps are included:
(1) it is parallel at full wafer cell piece main gate line half and is cut by laser using optical fiber laser edge, same
One position is cut 5 times, and depth of cut is the 60% of cell piece thickness, is then broken into two with one's hands, is obtained equal-sized cell piece half；
(2) the resulting cell piece half of 6 steps (1) is connected using welding and is welded into cell piece half string, and according to
The above method obtains 6 groups of cell piece half strings；
(3) the resulting 6 groups of cell piece half of step (2) are connected in series and parallel, obtains cell piece half group, cell piece half
Group has lead-out wire, is electrically connected between cell piece half group by lead-out wire；
(4) PVB glue film, the resulting cell piece half group of step (4), glue film and cover board, laying are successively laid on backboard
PVB glue film with a thickness of 0.35mm, backboard and cover board are the ultra-clear glasses with a thickness of 3mm, and cell piece half group, which has, draws
Line, lead-out wire extend to the outside of backboard and cover board, complete lamination operation, obtain half component；
(5) it is imaged by infrared camera, whether the cell piece half in the resulting half component of checking step (4) has crack
Piece, and reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, first vacuumizes, makes pressure-in laminating machine
1MPa, maintain 27min, then the lower room of laminating machine is vacuumized, upper chamber inflation, make chamber pressure -0.6MPa on laminating machine, under
Chamber pressure is -1MPa, maintains 20min, continues to vacuumize the lower room of laminating machine, upper chamber inflation, makes chamber pressure -
0.3MPa, lower chamber pressure are -1MPa, maintain 12min, continue to vacuumize the lower room of laminating machine, upper chamber inflation, make on laminating machine
Chamber pressure -0.2MPa, lower chamber pressure -1MPa, maintain 12min, temperature is then risen to 147 DEG C, in laminating machine pressure be -
Under 0.65MPa, 35min is maintained, makes glue film softening that cell piece half group to bond together with backboard and cover board；
(7) frame of 6063 aluminum alloy materials, thereto, cell piece are installed additional to the resulting half component of step (6)
The lead-out wire of half group is electrically connected with terminal box；
(8) secondary EL test is carried out to the resulting half component of step (7), is detected using anti-exposure camera, examined
Survey the electrical property of step (7) resulting half component.
Embodiment 4:
A kind of preparation process of high power half component, the preparation process the following steps are included:
(1) it is parallel at full wafer cell piece main gate line half and is cut by laser using optical fiber laser edge, same
One position is cut 7 times, and depth of cut is the 65% of cell piece thickness, is then broken into two with one's hands, is obtained equal-sized cell piece half；
(2) the resulting cell piece half of 8 steps (1) is connected using welding and is welded into cell piece half string, and according to
The above method obtains 8 groups of cell piece half strings；
(3) the resulting 8 groups of cell piece half of step (2) are connected in series and parallel, obtains cell piece half group, cell piece half
Group has lead-out wire, is electrically connected between cell piece half group by lead-out wire；
(4) POE glue film, the resulting cell piece half group of step (4), glue film and cover board, laying are successively laid on backboard
POE glue film with a thickness of 0.4mm, backboard and cover board are to have and draw with a thickness of the ultra-clear glasses cell piece half group of 3.2mm
Line, lead-out wire extend to the outside of backboard and cover board, complete lamination operation, obtain half component；
(5) it is imaged by infrared camera, whether the cell piece half in the resulting half component of checking step (4) has crack
Piece, and reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, first vacuumizes, makes pressure-in laminating machine
1MPa, maintain 32min, then the lower room of laminating machine is vacuumized, upper chamber inflation, make chamber pressure -0.6MPa on laminating machine, under
Chamber pressure is -1MPa, maintains 22min, continues to vacuumize the lower room of laminating machine, upper chamber inflation, makes chamber pressure -
0.3MPa, lower chamber pressure are -1MPa, maintain 14min, continue to vacuumize the lower room of laminating machine, upper chamber inflation, make on laminating machine
Chamber pressure -0.2MPa, lower chamber pressure -1MPa, maintain 14min, temperature is then risen to 150 DEG C, in laminating machine pressure be -
Under 0.7MPa, 38min is maintained, makes glue film softening that cell piece half group to bond together with backboard and cover board；
(7) frame of 6061 aluminum alloy materials, thereto, cell piece are installed additional to the resulting half component of step (6)
The lead-out wire of half group is electrically connected with terminal box；
(8) secondary EL test is carried out to the resulting half component of step (7), is detected using anti-exposure camera, examined
Survey the electrical property of step (7) resulting half component.
Embodiment 5:
A kind of preparation process of high power half component, the preparation process the following steps are included:
(1) it is parallel at full wafer cell piece main gate line half and is cut by laser using optical fiber laser edge, same
One position is cut 8 times, and depth of cut is the 70% of cell piece thickness, is then broken into two with one's hands, is obtained equal-sized cell piece half；
(2) the resulting cell piece half of 12 steps (1) is connected using welding and is welded into cell piece half string, and according to
The above method obtains 12 groups of cell piece half strings；
(3) the resulting 12 groups of cell piece half of step (2) are connected in series and parallel, obtains cell piece half group, cell piece half
Piece group has lead-out wire, is electrically connected between cell piece half group by lead-out wire；
(4) EVA adhesive film, the resulting cell piece half group of step (4), glue film and cover board, laying are successively laid on backboard
EVA adhesive film with a thickness of 0.5mm, backboard and cover board are the ultra-clear glasses with a thickness of 3.5mm, and cell piece half group, which has, draws
Line, lead-out wire extend to the outside of backboard and cover board, complete lamination operation, obtain half component；
(5) it is imaged by infrared camera, whether the cell piece half in the resulting half component of checking step (4) has crack
Piece, and reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, first vacuumizes, makes pressure-in laminating machine
1MPa, maintain 35min, then the lower room of laminating machine is vacuumized, upper chamber inflation, make chamber pressure -0.6MPa on laminating machine, under
Chamber pressure is -1MPa, maintains 25min, continues to vacuumize the lower room of laminating machine, upper chamber inflation, makes chamber pressure -
0.3MPa, lower chamber pressure are -1MPa, maintain 15min, continue to vacuumize the lower room of laminating machine, upper chamber inflation, make on laminating machine
Chamber pressure -0.2MPa, lower chamber pressure -1MPa, maintain 15min, temperature is then risen to 155 DEG C, in laminating machine pressure be -
Under 0.8MPa, 40min is maintained, makes glue film softening that cell piece half group to bond together with backboard and cover board；
(7) frame of 6061 aluminum alloy materials, thereto, cell piece are installed additional to the resulting half component of step (6)
The lead-out wire of half group is electrically connected with terminal box；
(8) secondary EL test is carried out to the resulting half component of step (7), is detected using anti-exposure camera, examined
Survey the electrical property of step (7) resulting half component.
Comparative example:
Half component is prepared according to the method for the embodiment of the present invention 3, except that using welding by 6 cell piece half
Series connection is welded into cell piece half string, and obtains 6 groups of cell piece half strings according to the method described above；Again by 6 groups of cell piece half strings
It is connected in series, obtains cell piece half group.
Effect example:
(1) laboratory sample: half component obtained by half component and comparative example obtained by the embodiment of the present invention 3.
(2) experimental method: using the solar components power measuring that product type is SMT-AAA to the electricity of laboratory sample
Performance is tested, and the results are shown in Table 1.
Table 1
Note: CTM value is the percentage of finger assembly output power Yu cell piece general power, it indicates the journey of component power loss
Degree, the higher degree for indicating component power loss of CTM value are smaller.
(3) experimental result: the CTM value of half component obtained by the embodiment of the present invention 3 is than half obtained by comparative example
The CTM value of component promotes 2.5%, and average output power promotes 6-7W, the results showed that, half obtained by the embodiment of the present invention 3
The resistance of component internal can be effectively reduced in component, to reduce the heating loss of component internal, so that the output power of component
It is promoted.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any label in claim should not be construed as limiting the claims involved.
Claims (8)
1. a kind of preparation process of high power half component, which is characterized in that the preparation process the following steps are included:
(1) preparation of cell piece half；
(2) preparation of cell piece half string；
(3) preparation of cell piece half group；
(4) preparation of half component；
(5) EL tests；
(6) laminating packaging；
(7) it frames up, attaching wire box；
(8) secondary EL test.
2. a kind of preparation process of high power half component according to claim 1, which is characterized in that the preparation process packet
Include following steps:
(1) full wafer cell piece is cut by laser, is broken into two with one's hands, obtain cell piece half；
(2) the resulting cell piece half series connection of step (1) is welded into cell piece half string；
(3) the resulting cell piece half of step (2) is connected in series and parallel, obtains cell piece half group；
(4) glue film, the resulting cell piece half group of step (4), glue film and cover board are successively laid on backboard, are completed lamination and are made
Industry obtains half component；
(5) one times EL is tested, and whether the cell piece half in the resulting half component of checking step (4) has crack piece, and rejects
Crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, is first vacuumized, room vacuumizes, upper chamber is filled under then keeping
Gas, then heating, pressure maintaining make glue film softening that solar battery string to bond together with backboard and cover board；
(7) frame, thereto are installed to the resulting half component of step (6) additional；
(8) secondary EL test, the electrical property of the resulting half component of detecting step (7).
3. a kind of preparation process of high power half component according to claim 2, which is characterized in that the preparation process packet
Include following steps:
(1) it is parallel at full wafer cell piece main gate line half and is cut by laser using optical fiber laser edge, then broken into two with one's hands,
Obtain equal-sized cell piece half；
(2) N number of step (1) resulting cell piece half series connection is welded into cell piece half string using welding, the N be greater than
Integer equal to 2, and M group cell piece half string is obtained according to the method described above, the M is the integer more than or equal to 2；
(3) the resulting M group cell piece half of step (2) is connected in series and parallel, obtains cell piece half group, the cell piece half
Group has lead-out wire, is electrically connected between the cell piece half group by lead-out wire；
(4) glue film, the resulting cell piece half group of step (4), glue film and cover board, the cell piece half are successively laid on backboard
Piece group has lead-out wire, and the lead-out wire extends to the outside of backboard and cover board, completes lamination operation, obtains half component；
(5) it is imaged by infrared camera, whether the cell piece half in the resulting half component of checking step (4) has crack piece,
And reject crack piece；
(6) the resulting half component of step (5) is placed in laminating machine, is first vacuumized, make pressure -1MPa in laminating machine, tieed up
20-35min is held, then the lower room of laminating machine is vacuumized, upper chamber inflation, makes chamber pressure -0.6MPa on laminating machine, lower chamber pressure
Power is -1MPa, maintains 15-25min, continues to vacuumize the lower room of laminating machine, upper chamber inflation, make chamber pressure -0.3MPa,
Lower chamber pressure is -1MPa, maintains 10-15min, continues to vacuumize the lower room of laminating machine, upper chamber inflation, makes chamber pressure on laminating machine
Power -0.2MPa, lower chamber pressure -1MPa maintain 10-15min, temperature are then risen to 140-155 DEG C, the pressure in laminating machine
To maintain 30-40min under -0.5~-0.8MPa, make glue film softening that cell piece half group and backboard and cover board are bonded in one
It rises；
(7) aluminum alloy frame, thereto are installed to the resulting half component of step (6) additional, the cell piece half group is drawn
Outlet is electrically connected with terminal box；
(8) secondary EL test is carried out to the resulting half component of step (7), is detected using anti-exposure camera, detection step
Suddenly the electrical property of (7) resulting half component.
4. a kind of preparation process of high power half component according to claim 3, it is characterised in that: the step (1)
It is middle to be cut by laser along full wafer cell piece main gate line half, it is cut 2-8 times in same position, depth of cut is battery
The 50-70% of piece thickness.
5. a kind of preparation process of high power half component according to any one of claim 2 to 4, it is characterised in that:
Glue film is any one in EVA adhesive film, PVB glue film, organic silica gel or POE film in the step (4).
6. a kind of preparation process of high power half component according to claim 5, it is characterised in that: the step (4)
It is middle laying glue film with a thickness of 0.2-0.5mm.
7. a kind of preparation process of high power half component according to claim 6, it is characterised in that: the step (4)
Dorsulum and cover board are the ultra-clear glasses with a thickness of 2.5-3.5mm.
8. a kind of preparation process of high power half component according to claim 7, it is characterised in that: the step (7)
The material of middle aluminum alloy frame is 6061 aluminium alloys or 6063 aluminium alloys.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811492778.3A CN109786479B (en) | 2018-12-06 | 2018-12-06 | Preparation process of high-power half-piece assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811492778.3A CN109786479B (en) | 2018-12-06 | 2018-12-06 | Preparation process of high-power half-piece assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109786479A true CN109786479A (en) | 2019-05-21 |
| CN109786479B CN109786479B (en) | 2021-01-01 |
Family
ID=66495753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811492778.3A Active CN109786479B (en) | 2018-12-06 | 2018-12-06 | Preparation process of high-power half-piece assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109786479B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180548A (en) * | 2019-12-24 | 2020-05-19 | 浙江宏阳新能源科技有限公司 | Efficient half-piece battery pack and preparation process thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130206213A1 (en) * | 2012-02-15 | 2013-08-15 | Alta Devices, Inc. | Photovoltaic module containing shingled photovoltaic tiles and fabrication processes thereof |
| CN106449825A (en) * | 2016-12-01 | 2017-02-22 | 无锡乐峰太阳能科技有限公司 | Preparation method for solar double-glass component |
| CN107452824A (en) * | 2017-08-14 | 2017-12-08 | 江阴艾能赛瑞能源科技有限公司 | A kind of new type solar energy half cell piece and its preparation method and application |
| CN108428767A (en) * | 2018-04-01 | 2018-08-21 | 格润智能光伏南通有限公司 | A kind of more main grid half stacked wafer moudle row string methods |
| CN108538941A (en) * | 2018-04-01 | 2018-09-14 | 格润智能光伏南通有限公司 | A kind of double glass photovoltaic modulies of half |
-
2018
- 2018-12-06 CN CN201811492778.3A patent/CN109786479B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130206213A1 (en) * | 2012-02-15 | 2013-08-15 | Alta Devices, Inc. | Photovoltaic module containing shingled photovoltaic tiles and fabrication processes thereof |
| CN106449825A (en) * | 2016-12-01 | 2017-02-22 | 无锡乐峰太阳能科技有限公司 | Preparation method for solar double-glass component |
| CN107452824A (en) * | 2017-08-14 | 2017-12-08 | 江阴艾能赛瑞能源科技有限公司 | A kind of new type solar energy half cell piece and its preparation method and application |
| CN108428767A (en) * | 2018-04-01 | 2018-08-21 | 格润智能光伏南通有限公司 | A kind of more main grid half stacked wafer moudle row string methods |
| CN108538941A (en) * | 2018-04-01 | 2018-09-14 | 格润智能光伏南通有限公司 | A kind of double glass photovoltaic modulies of half |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180548A (en) * | 2019-12-24 | 2020-05-19 | 浙江宏阳新能源科技有限公司 | Efficient half-piece battery pack and preparation process thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109786479B (en) | 2021-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0755080B1 (en) | A process of producing a semiconductor device | |
| US6175075B1 (en) | Solar cell module excelling in reliability | |
| CN102916067B (en) | Building material type double-sided glass photovoltaic component and manufacturing method thereof | |
| CN109301004A (en) | A kind of imbrication photovoltaic module and manufacturing method | |
| CN109728131A (en) | A kind of preparation process of high density imbrication component | |
| WO2012015031A1 (en) | Solar cell module | |
| CN205177858U (en) | Two -sided battery pack of no main grid | |
| CN109360863A (en) | A kind of novel stacked wafer moudle | |
| CN102013449A (en) | Making method of color solar photovoltaic assembly | |
| CN102254975A (en) | Flexible thin film solar cell and packaging method thereof | |
| CN105576057A (en) | Solar cell module and preparation method thereof | |
| CN113178501A (en) | Flexible photovoltaic module and preparation method thereof | |
| CN109786479A (en) | A kind of preparation process of high power half component | |
| CN110676345A (en) | Splicing method and assembly of crystalline silicon solar cell string | |
| CN206921838U (en) | A kind of light-weight solar component | |
| CN106711263A (en) | Solar cell module and manufacturing method thereof | |
| CN109166939A (en) | Photovoltaic glass and photovoltaic module | |
| CN209487524U (en) | Photovoltaic module | |
| CN115172535B (en) | Preparation method of photovoltaic module and photovoltaic module | |
| CN209471979U (en) | A kind of novel stacked wafer moudle | |
| CN205845972U (en) | The solar module of anti-current potential induction attenuation effect | |
| CN116404060A (en) | Photovoltaic conductive structure | |
| CN105449050A (en) | Manufacturing method for crystalline silicon solar cell assembly | |
| CN102544161A (en) | Back plate for metal wrap through (MWT) solar battery | |
| JPH11112007A (en) | Solar cell module and its manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |