CN108428767A - A kind of more main grid half stacked wafer moudle row string methods - Google Patents
A kind of more main grid half stacked wafer moudle row string methods Download PDFInfo
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- CN108428767A CN108428767A CN201810279836.8A CN201810279836A CN108428767A CN 108428767 A CN108428767 A CN 108428767A CN 201810279836 A CN201810279836 A CN 201810279836A CN 108428767 A CN108428767 A CN 108428767A
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- string
- series connection
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- main grid
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000003466 welding Methods 0.000 claims abstract description 33
- 239000011521 glass Substances 0.000 claims abstract description 16
- 239000012528 membrane Substances 0.000 claims abstract description 16
- 238000003475 lamination Methods 0.000 claims abstract description 15
- 238000005520 cutting process Methods 0.000 claims abstract description 5
- 238000003698 laser cutting Methods 0.000 claims abstract description 5
- 238000013461 design Methods 0.000 claims abstract description 4
- 239000000945 filler Substances 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 238000000605 extraction Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 3
- 238000004132 cross linking Methods 0.000 claims description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 3
- 238000009432 framing Methods 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 239000004611 light stabiliser Substances 0.000 claims description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 11
- 239000004035 construction material Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of more main grid half stacked wafer moudles to arrange string method, includes the following steps：A, it is equal-sized half cell piece by full wafer laser cutting；B, utilize welding series welding at single string the half cell piece of well cutting in advance；C, after the completion of single string concatenation, 6 string battery strings are subjected to typesetting according to the string pitch requirements proper alignment of design on the glass for be laid with glued membrane；D, with busbar that single string series connection is integral after the completion of typesetting；The series connection of the string of tail portion 1,2,3,4 string series connection, 5,6 string series connection when E, connecting, and stem is 1 string simply connected, 2,3 string series connection, 4,5 string series connection, 6 string simply connecteds；F, after the completion of concatenation, above and below stem between busbar from the bottom up successively cushioning glued membrane, insulation filler strip, it is laid with back side glued membrane, backboard or back glass, stickup glass surface bar code etc. successively again and completes lamination operation, row of the invention string method effectively reduces component internal ohmic loss.
Description
Technical field
The present invention relates to photovoltaic module technical field, specially a kind of more main grid half stacked wafer moudles arrange string method.
Background technology
The different size that photovoltaic module is cut open by solar battery sheet or by laser cutting machine machine or steel-wire cutting machine
Solar cell combines composition.Due to electric current and voltage all very littles of monolithic solar cell piece, then we are him
First series connection obtain high voltage, then it is in parallel obtain high current after, pass through a diode（Prevent electric current from feeding back）Then it exports.Light
Lie prostrate component（Also it is solar panel）It is most heavy in core and the solar power system in solar power system
The part wanted.It is to convert solar energy into electrical energy, and be sent in accumulator and store, or push loaded work piece that it, which is acted on,；But
It is that, with the use of Miniature inverter, directly the current source of photovoltaic module can be transformed into the voltage source of 40V or so, just
It can drive in our life of appliance applications；Meanwhile photovoltaic module is being constantly brought forth new ideas, due to photovoltaic module it is in the field of business for
It is called made in China, it should have Created in China, and then the upgrading innovative product of photovoltaic module occur, such as photovoltaic ceramic tile, photovoltaic
Color steel tile, this kind of product can directly replace traditional construction material tile, also have the function of photovoltaic module, once step into general city
, certain impact will be caused to photovoltaic module and traditional construction material.
With the fast development of photovoltaic market, photovoltaic generation has become the outstanding person of new energy field, and photovoltaic module is made
For the carrier of solar power generation, the quality of its performance directly determines its competitiveness in photovoltaic generation market, for this purpose, vast
Photovoltaic people actively has developed various rule technologies, to improve component power as far as possible, adapts to market development.It is produced in numerous photovoltaic modulies
In product technology, lamination techniques due to it can make to arrange greater number of cell piece in unit area and with improving component power
Effect, so, lamination techniques are always the emphasis that vast photovoltaic people is studied.
So-called lamination is both to be interconnected battery in a manner of closer, the gap between battery is enabled to be preferably minimized, even
Edge is slightly overlapped, therefore more batteries can be laid in same unit area, and extinction area increases, to improve work(
Rate.But currently used laminating method is that adjacent cell piece edge is directly glued to glutinous series connection bunchiness using conducting resinl, using
Lamination typesetting is at stacked wafer moudle, though this technique has high power, low-loss advantage, operation is complicated, realizes that volume production is difficult, and
The technology is and less for the application of more main grid components at present mostly suitable for no main grid component, and existing special invention is a kind of new mostly main
More main grid technologies, lamination techniques, half chip technology can be combined together, obtain the photovoltaic group of higher power by grid half stacked wafer moudle
Part.
Invention content
The purpose of the present invention is to provide a kind of more main grid half stacked wafer moudles to arrange string method, to solve above-mentioned background technology
The problem of middle proposition.
To achieve the above object, the present invention provides the following technical solutions：A kind of more main grid half stacked wafer moudle row string methods,
Include the following steps：
A, it is equal-sized half cell piece by full wafer laser cutting；
B, utilize welding series welding at single string the half cell piece of well cutting in advance；
C, after the completion of single string concatenation, by 6 string battery strings according to the string pitch requirements proper alignment of design in the glass for being laid with glued membrane
Typesetting is carried out on glass；
D, with busbar that single string series connection is integral after the completion of typesetting, i.e., the welding that every string head and the tail stretch out is welded with busbar
Get up, is divided into stem welding series connection and tail portion welding series connection；
The series connection of the string of tail portion 1,2,3,4 string series connection, 5,6 string series connection when E, connecting, and stem is 1 string simply connected, 2,3 string series connection, 4,5 strings
Series connection, 6 string simply connecteds；
F, after the completion of concatenation, cushioning glued membrane, insulation filler strip successively from the bottom up between busbar above and below stem then are laid with successively
Back side glued membrane, backboard or back glass, stickup glass surface bar code etc. complete lamination operation, and EL is surveyed before being then laminated successively
It tries, be laminated, framing up, attaching wire box, test, the procedures such as final inspection can be completed more main grid half lamination finished Components and make.
Preferably, specific composition method is in the step C：Adjacent two string unidirectional positive and negative anodes when typesetting on the contrary,
Such as in terms of module backside head, it is followed successively by positive and negative-positive and negative-positive and negative alternating state from left to right, if p-type component, then head is gone here and there on a left side 1
Portion's welding is drawn from the cell piece back side, and tail portion is drawn from front, and a left side 2 is gone here and there head welding and drawn from cell piece front, and tail portion is from anti-
Face is drawn, and is alternately analogized successively；If N-type component, then 1 string head welding of a left side is from front extraction, and tail portion is drawn from the negative, a left side 2
String head welding is drawn from the negative, and tail portion is drawn from front.
Preferably, glued membrane is composed of the following components according to mass parts in the step C：Ethylene-vinyl acetate base is copolymerized
50-60 parts of object, 2-3 parts of crosslinking and curing agent, 2-5 parts of silane coupling agent, 1-3 parts of antioxidant, 2-4 parts of light stabilizer, rheology
1-3 parts of auxiliary agent.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention is by more main grid technologies and lamination techniques, half skill
Art combines together, not only has unique more main grid battery connection types, effectively reduces component internal ohmic loss, more important
Be to take full advantage of white space in component area, lifting assembly energy per unit area density, to obtain high power, high efficiency
The more main grid components of component.
Description of the drawings
Fig. 1 is overall structure of the present invention；
Fig. 2 is back laminate figure of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
- 2 are please referred to Fig.1, the present invention provides a kind of technical solution：A kind of more main grid half stacked wafer moudle row string methods, packet
Include following steps：
A, it is equal-sized half cell piece 1 by full wafer laser cutting；
B, by the half cell piece 1 of well cutting in advance using welding series welding at single string, when series connection, requires welding and cell piece surface
Main grid wire bonding is good, and is overlapped within the scope of adjacent two half battery edge certain size, and key problem in technology point is lap
Welding needs to flatten using forming machanism special in string welding machine, because conventional more main grid weldings are that have certain thickness, pressure
Flat is pressure break cell piece when avoiding being laminated in order to reduce the difference in height of lap cell piece；
C, after the completion of single string concatenation, by 6 string battery strings according to the string pitch requirements proper alignment of design in the glass for being laid with glued membrane
Typesetting is carried out on glass；
D, with busbar that single string series connection is integral after the completion of typesetting, i.e., the welding that every string head and the tail stretch out is welded with busbar
Get up, is divided into stem welding series connection and tail portion welding series connection；
The series connection of the string of tail portion 1,2,3,4 string series connection, 5,6 string series connection when E, connecting, and stem is 1 string simply connected, 2,3 string series connection, 4,5 strings
Series connection, 6 string simply connecteds；
F, after the completion of concatenation, cushioning glued membrane, insulation filler strip successively from the bottom up between busbar above and below stem then are laid with successively
Back side glued membrane, backboard or back glass, stickup glass surface bar code etc. complete lamination operation, and EL is surveyed before being then laminated successively
It tries, be laminated, framing up, attaching wire box, test, the procedures such as final inspection can be completed more main grid half lamination finished Components and make.
In the present invention, specific composition method is in step C：The unidirectional positive and negative anodes of adjacent two string are on the contrary, such as when typesetting
In terms of module backside head, it is followed successively by positive and negative-positive and negative-positive and negative alternating state from left to right, if p-type component, then head is gone here and there on a left side 1
Welding is drawn from the cell piece back side, and tail portion is drawn from front, and 2 string head welding of a left side is drawn from cell piece front, and tail portion is from the negative
It draws, alternately analogizes successively；If N-type component, then 1 string head welding of a left side is from front extraction, and tail portion is drawn from the negative, and a left side 2 is gone here and there
Head welding is drawn from the negative, and tail portion is drawn from front.
More main grid stacked wafer moudles of the present invention have unique more main grid battery connection types, effectively reduce group
Part internal resistance loses；More main grid stacked wafer moudles of the present invention, cell piece lamination arrangement, efficiently use component clear area
Domain, lifting assembly energy per unit area density can increase by 5% or so number of batteries piece in equal area, reach high power, efficiently
Rate purpose；Present invention can apply to conventional more main grid half stacked wafer moudles, the more main grid half stacked wafer moudles of convention transparent, double glass are more
The making of the multiple assemblies such as main grid half stacked wafer moudle, is applicable not only to p-type component, is equally applicable for N-type component；The present invention relates to
And more main grid stacked wafer moudles refer mainly to 12 main grid components, i.e., cell piece is designed with 12 main gate lines, but is equally applicable for other
The component of specification grid line, such as 4 grid, 5 grid components；More main grid stacked wafer moudles of the present invention can be related to requirement string according to domain
Run in version, i.e., single string concatenation half cell piece quantity is adjustable, and the single string quantity of monoblock unit concatenation is adjustable, generally even number
String.
In the present invention, glued membrane is composed of the following components according to mass parts in step C：Ethylene-vinyl acetate base co-polymer
50-60 parts, 2-3 parts of crosslinking and curing agent, 2-5 parts of silane coupling agent, 1-3 parts of antioxidant, 2-4 parts of light stabilizer, rheology help
1-3 parts of agent.The glued membrane that the present invention uses can improve the photoelectric conversion efficiency of battery, also improve weather-proof anti-ultraviolet ageing
Energy.
In conclusion the present invention combines more main grid technologies and lamination techniques, half chip technology together, not only have unique
More main grid battery connection types, effectively reduce component internal ohmic loss, it is often more important that take full advantage of in component area
White space, lifting assembly energy per unit area density, to obtain the more main grid components of high power, high efficiency component.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (3)
1. a kind of more main grid half stacked wafer moudles arrange string method, it is characterised in that：Include the following steps：
A, it is equal-sized half cell piece (1) by full wafer laser cutting；
B, utilize welding series welding at single string the half cell piece (1) of well cutting in advance；
C, after the completion of single string concatenation, by 6 string battery strings according to the string pitch requirements proper alignment of design in the glass for being laid with glued membrane
Typesetting is carried out on glass；
D, with busbar that single string series connection is integral after the completion of typesetting, i.e., the welding that every string head and the tail stretch out is welded with busbar
Get up, is divided into stem welding series connection and tail portion welding series connection；
The series connection of the string of tail portion 1,2,3,4 string series connection, 5,6 string series connection when E, connecting, and stem is 1 string simply connected, 2,3 string series connection, 4,5 strings
Series connection, 6 string simply connecteds；
F, after the completion of concatenation, cushioning glued membrane, insulation filler strip successively from the bottom up between busbar above and below stem then are laid with successively
Back side glued membrane, backboard or back glass, stickup glass surface bar code etc. complete lamination operation, and EL is surveyed before being then laminated successively
It tries, be laminated, framing up, attaching wire box, test, the procedures such as final inspection can be completed more main grid half lamination finished Components and make.
2. a kind of more main grid half stacked wafer moudles according to claim 1 arrange string method, it is characterised in that：The step C
In specific composition method be：Adjacent two string unidirectional positive and negative anodes when typesetting are past from a left side on the contrary, such as in terms of module backside head
The right side is followed successively by positive and negative-positive and negative-positive and negative alternating state, and if p-type component, then a left side 1 is gone here and there head welding and drawn from the cell piece back side, tail
Portion is drawn from front, and head welding is gone here and there from the extraction of cell piece front in a left side 2, and tail portion is drawn from the negative, is alternately analogized successively；If N
Type component then left 1 goes here and there head welding from front extraction, and tail portion is drawn from the negative, and 2 string head welding of a left side is drawn from the negative, tail portion
It is drawn from front.
3. a kind of more main grid half stacked wafer moudles according to claim 1 arrange string method, it is characterised in that：The step C
Middle glued membrane is composed of the following components according to mass parts：50-60 parts of ethylene-vinyl acetate base co-polymer, crosslinking and curing agent 2-3
Part, 2-5 parts of silane coupling agent, 1-3 parts of antioxidant, 2-4 parts of light stabilizer, 1-3 parts of auxiliary rheological agents.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810279836.8A CN108428767A (en) | 2018-04-01 | 2018-04-01 | A kind of more main grid half stacked wafer moudle row string methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810279836.8A CN108428767A (en) | 2018-04-01 | 2018-04-01 | A kind of more main grid half stacked wafer moudle row string methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108428767A true CN108428767A (en) | 2018-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810279836.8A Pending CN108428767A (en) | 2018-04-01 | 2018-04-01 | A kind of more main grid half stacked wafer moudle row string methods |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786479A (en) * | 2018-12-06 | 2019-05-21 | 中建材浚鑫科技有限公司 | A kind of preparation process of high power half component |
| CN110335915A (en) * | 2019-03-29 | 2019-10-15 | 一道新能源科技(衢州)有限公司 | A kind of half lamination solar components and preparation method thereof |
| CN112289889A (en) * | 2020-10-20 | 2021-01-29 | 无锡奥特维科技股份有限公司 | Battery string production method |
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| CN104617169A (en) * | 2013-11-05 | 2015-05-13 | 晶科能源有限公司 | Photovoltaic component |
| US20160268924A1 (en) * | 2015-03-12 | 2016-09-15 | Futurewei Technologies, Inc. | Multi-Level Inverter Apparatus and Method |
| CN205944116U (en) * | 2016-07-27 | 2017-02-08 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Polycrystalline silicon does not have main grid solar module |
| CN107507881A (en) * | 2017-08-30 | 2017-12-22 | 通威太阳能（安徽）有限公司 | A kind of photovoltaic half component internal protection circuit attachment structure |
-
2018
- 2018-04-01 CN CN201810279836.8A patent/CN108428767A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103441175A (en) * | 2013-08-13 | 2013-12-11 | 苏州盛康光伏科技有限公司 | Crystalline silicon photovoltaic module |
| CN104617169A (en) * | 2013-11-05 | 2015-05-13 | 晶科能源有限公司 | Photovoltaic component |
| US20160268924A1 (en) * | 2015-03-12 | 2016-09-15 | Futurewei Technologies, Inc. | Multi-Level Inverter Apparatus and Method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786479A (en) * | 2018-12-06 | 2019-05-21 | 中建材浚鑫科技有限公司 | A kind of preparation process of high power half component |
| CN110335915A (en) * | 2019-03-29 | 2019-10-15 | 一道新能源科技(衢州)有限公司 | A kind of half lamination solar components and preparation method thereof |
| CN112289889A (en) * | 2020-10-20 | 2021-01-29 | 无锡奥特维科技股份有限公司 | Battery string production method |
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Application publication date: 20180821 |