CN105576057A - Solar cell module and preparation method thereof - Google Patents

Solar cell module and preparation method thereof Download PDF

Info

Publication number
CN105576057A
CN105576057A CN201510546524.5A CN201510546524A CN105576057A CN 105576057 A CN105576057 A CN 105576057A CN 201510546524 A CN201510546524 A CN 201510546524A CN 105576057 A CN105576057 A CN 105576057A
Authority
CN
China
Prior art keywords
cell piece
wire
cell
adjacent
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510546524.5A
Other languages
Chinese (zh)
Other versions
CN105576057B (en
Inventor
孙翔
王申存
薛金鑫
姜占锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BYD Co Ltd
Original Assignee
BYD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BYD Co Ltd filed Critical BYD Co Ltd
Priority to CN201510546524.5A priority Critical patent/CN105576057B/en
Priority to JP2017523431A priority patent/JP2017537469A/en
Priority to PCT/CN2015/093418 priority patent/WO2016066135A1/en
Priority to US14/928,863 priority patent/US20160126391A1/en
Priority to EP15855152.3A priority patent/EP3198656A4/en
Publication of CN105576057A publication Critical patent/CN105576057A/en
Application granted granted Critical
Publication of CN105576057B publication Critical patent/CN105576057B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433Particular geometry of the grid contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/0488Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/049Protective back sheets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/05Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a solar cell module and a preparation method thereof. The solar cell module comprises an upper glass board, a front adhesive film layer, a solar cell array, a back adhesive film layer and a backboard which are laminated in turn. The backboard is a water vapor insulating backboard. Water vapor transmittance of the water vapor insulating backboard is less than 0.1mg/m<2>/day. The solar cell array includes multiple cells and conductive wires. The adjacent cells are connected via the conductive wires. The front surface of each cell is provided with secondary gate lines. The conductive wires are welded with the secondary gate lines via a welding layer. The welding layer contains alloys which include Sn and Bi. According to the solar cell module, the connecting effect of the conductive wires and the cells can be enhanced so that photoelectric conversion efficiency can be guaranteed. Besides, the welded layer can be effectively sealed on the upper glass board, the front adhesive film layer, the back adhesive film layer and a lower glass or metal board so that the cell array can be effectively protected, attenuation of the solar cell module can be alleviated and the service life can be prolonged.

Description

Solar module and preparation method thereof
Technical field
The present invention relates to area of solar cell, relate to solar module and preparation method thereof particularly.
Background technology
About conventional batteries sheet matrix, current primary structure: the silver-colored main grid of battery is welded with the back side of adjacent cell by welding, the slurry main component making grid line is the noble silver that price is higher, welding great majority are for being coated with the copper strips of leypewter, common component uses EVA as encapsulating film, use macromolecular material as backboard, find the following defect in long-term use.
First: backboard is the macromolecule back veneer material with certain water vapor transmittance, the steam in environment and corrosive gas can enter in assembly through backboard, corrosion cell sheet and welding, reduce assembly life-span; Second: the TPT backboard cost of better performances is very high, and common non-Tedler backboard is easy to occur xanthochromia, cracking, efflorescence etc. after a period of time uses, the power of assembly and life-span all can be affected, and the reason of the assembly lightning line found in the recent period is also this; 3rd, the resistance to wear of macromolecular material is lower, and in windy and dusty area, the anti-aging layer on backboard is worn very soon, and cause pet layer (or copper functional layer) to expose in atmosphere, and pet layer is more easy to wear, the resistance to wear of component integration is lower; 4th, backboard self is flexible material, overleaf for cell piece substantially without physical protection, when being under pressure or clashing into cell piece be easy to cracking; 5th, although with the addition of ultraviolet absorber in EVA, under be exposed to the sun in open air for a long time, ultraviolet absorber can be consumed gradually.Under ultraviolet light and steam comprehensive function, can there is xanthochromia of degrading in EVA, reduces component power and export, and produce the Small molecular such as acetic acid, can corrode welding and cell piece equally, shorten assembly life-span and lower efficiency.
In addition, cell piece and welding adopt Sn, Pb alloy to weld usually, but Sn, Pb alloy is because of containing Pb, and exist environment and pollute, non-green material, is unfavorable for promoting the use of.
Summary of the invention
The application makes the discovery of the following fact and problem and understanding based on inventor:
In correlation technique, the front of solar battery sheet is provided with main gate line and secondary grid line usually, for deriving the electric current that cell piece is produced by photoelectric effect or Photochemical effects.In order to improve the efficiency of cell piece, current solar breeder commercial city is being devoted to study the quantity how improving main gate line.Successful in prior art main grid is brought up to 3 from 2, be even increased to 5.
But in prior art, main gate line is that the slurry being expensive silver by printing main component is prepared from, and therefore, its preparation cost is very high, and the radical increasing silver-colored main gate line must cause the increase of cost.Meanwhile, the width large (such as, width reaches more than 2mm) of existing silver-colored main gate line, the radical increasing silver-colored main gate line also can increase to shading-area, causes the conversion efficiency of cell piece to reduce.
Therefore, from the angle reducing costs, reduce shading-area, in correlation technique, the script silver-colored main gate line be printed on cell piece is replaced with wire, as copper wire, welded with secondary grid line by copper wire, and then copper wire is as main gate line derived current.Owing to not re-using silver-colored main gate line, its cost can significantly reduce, and simultaneously because the diameter of copper wire is less, can reduce shading-area, therefore, further the quantity of main gate line can be risen to 10.This cell piece can be called many main grids cell piece or dereliction grid cell sheet, and wherein, wire substituted for silver-colored main grid in conventional solar cell sheet and welding.
And in area of solar cell, the structure of solar cell is also uncomplicated, but each structure is more crucial, and the preparation of main grid is considered due to the factor of each side, such as shading surface, conductance, equipment, technique, cost etc., cause it to be difficult point in solar battery technology and focus.Those skilled in the art are through the effort of several generations many times, solar battery sheet on the market is just made to become three main grid solar cells by two main grid solar cells at about 2007, a small amount of producer proposed the solar cell of four main grids at about 2014, the technology of many main grids is also the concept just proposed in recent years, but realize more difficult, do not have more ripe product yet.
The dereliction grid solar cell that the application proposes, without the need to arranging main gate line on cell piece, also without the need to welding, reduces cost, and can commercialization, and preparation is simple and easy to realize, and particularly cost is low, and equipment is simple, and can produce in batches, electricity conversion is high.Wire and the cell piece of dereliction grid solar cell disclosed in correlation technique can adopt the mode of welding to weld, because wire is thinner, there is larger stress, therefore larger requirement is existed to the adhesion of wire and cell piece, also larger requirement is there is in corresponding to weld layer, in correlation technique, that general employing is Sn, Pb alloy, but Sn, Pb alloy is because of containing Pb, exist environment and pollute, non-green material, the present inventor finds through long-term research experiment, Sn, Bi alloy has good application in this field, its cost is low, but the discovery surprising when concrete use its there is critical defect, in common component, wire is less than blackening in the time of one month, pass through test analysis, it is the oxidation due to alloy-layer, SnBi is the most oxidizable, show it and can not obtain practical application on product, but the low cost of SnBi alloy and low stain show again it for the easy-to-use weld layer alloying component of technique.
With reference to shown in Figure 15, Figure 15 being the polarization curve of Sn-Bi alloy and Sn-Pb alloy, wherein, test condition is: the area immersed by the sample of test in spirit of vinegar (pH value is about 6) is probably 20mm 2, comparison electrode is Sn, and namely adopt metal Sn to be reference electrode, the area of Sn-Bi Electrode used and Sn-Pb Electrode is 0.2cm 2.In figure, abscissa representative voltage (unit V), ordinate represents electric current (unit mA), and in forward voltage section, the polarization current produced under same polarizing voltage is large, is more easily oxidized.
Can find out by carrying out analysis to this polarization curve, under the same conditions, Sn-Bi alloy (shown in Figure 15 center line a) is not easy oxidized compared to Sn-Pb alloy (shown in Figure 15 center line b), namely the stability of Sn-Bi alloy is relatively higher, for the requirement of water vapor transmittance, the requirement of Sn-Bi alloy will lower than the requirement of Sn-Pb alloy.Specific to the solar cell of the application, usually Sn-Pb alloy is adopted to weld in this area, if adopt the relative higher Sn-Bi alloy of stability to weld, in theory, the backboard adopted when adopting Sn-Pb alloy to weld in solar cell, can meet the anti-oxidant requirement of Sn-Bi alloy when adopting Sn-Bi alloy to weld completely.
But present inventor finds through long-term experiment and research, and in wet condition, the oxidation rate of Sn-Bi alloy is higher than the oxidation rate of Sn-Pb alloy.For this reason, the steam breathability of inventor to the oxidation rate of Sn-Bi alloy and backboard can conduct in-depth research, and finds, when the water vapor transmittance of backboard is greater than 0.1mg/m 2during/day, the increase along with water vapor transmittance is sharply accelerated by the oxidation rate of Sn-Bi alloy, and when the water vapor transmittance of backboard is less than or equal to 0.1mg/m 2during/day, there is not marked change along with the change of water vapor transmittance in the oxidation rate of Sn-Bi alloy.
Thus, inventor selects water vapor transmittance lower than 0.1mg/m 2the back veneer material of/day; effectively can avoid the oxidation of Sn-Bi alloy material; can be good at intercepting the steam in environment, corrosive gas enters inside solar energy battery; avoid Sn-Bi alloy and can occur the phenomenon such as variable color, blackout because of oxidation under common encapsulation condition; affect solar battery life; thus energy available protecting Sn-Bi alloy; there will not be metachromatism; reduce the corrosion of solar cell; effectively protect solar cell; the solar cell that slows down is decayed, and extends solar battery life.
The application is intended to one of solve the problems of the technologies described above at least to a certain extent.
For this reason, the present invention proposes a kind of solar module, and this solar module manufacture is simple, cost is low, and electricity conversion is high.
The present invention also proposes a kind of preparation method of above-mentioned solar module.
The solar module of embodiment according to a first aspect of the present invention, comprise: upper glass plates stacked successively, front adhesive film, solar cell chip arrays, back side adhesive film and backboard, described backboard is steam insulating back panel, and the water vapor transmittance of described steam insulating back panel is less than or equal to 0.1mg/m 2/ day, described solar cell chip arrays comprises multiple cell piece and conductor wire, be connected by described conductor wire between adjacent cell sheet, the front of described cell piece has secondary grid line, described conductor wire is welded with described secondary grid line by weld layer, described weld layer contains alloy, and described alloy contains Sn and Bi.
According to the solar module of the embodiment of the present invention, secondary grid line on cell piece and conductor wire are weldingly connected by the weld layer of the alloy containing Sn and Bi, effectively can improve the connection effect of conductor wire and cell piece, ensure photoelectric conversion efficiency, unexpected discovery this kind of weld layer can well be applied in steam insulating back panel, upper glass plates, front adhesive film, back side adhesive film and steam insulating back panel such as glass or metallic plate can effective sealing weld layers, there will not be metachromatism, reduce the corrosion of cell piece array, available protecting protects cell piece array, slow down the decay of solar module, extend useful life, its cost is low simultaneously.
The preparation method of the solar module of embodiment according to a second aspect of the present invention, comprise: by upper glass plates, front adhesive film, described cell piece array, back side adhesive film and steam insulating back panel stack successively, and make the front of cell piece in the face of front adhesive film, the back side of cell piece is in the face of back side adhesive film, then carry out lamination and obtain described solar module, wherein said solar cell chip arrays comprises multiple cell piece and conductor wire, be connected by described conductor wire between adjacent cell sheet, the front of described cell piece has secondary grid line, described conductor wire is welded with described secondary grid line by weld layer, described weld layer contains alloy, described alloy contains Sn and Bi.
Accompanying drawing explanation
Fig. 1 is the floor map of the solar cell chip arrays according to the application's embodiment.
Fig. 2 is the schematic cross-section of the longitudinal direction of solar cell chip arrays according to the application's embodiment.
Fig. 3 is the schematic cross-section of the transverse direction of solar cell chip arrays according to the application's embodiment.
Fig. 4 is the schematic diagram wiry for the formation of conductor wire according to the embodiment of the present application.
Fig. 5 is the floor map of the solar cell chip arrays according to another embodiment of the application.
Fig. 6 is the floor map of the solar cell chip arrays according to the another embodiment of the application.
Fig. 7 is the schematic diagram of the reciprocation extension wiry according to the embodiment of the present application.
Fig. 8 is the schematic diagram of two cell pieces of solar cell chip arrays according to the embodiment of the present application.
Fig. 9 is that two cell pieces shown in Fig. 8 are formed by connecting by wire the schematic diagram of solar cell chip arrays.
Figure 10 is the schematic diagram of the solar module according to the embodiment of the present application.
Figure 11 is the schematic partial cross-sectional view of solar module shown in Figure 10.
Figure 12 is the schematic diagram according to the application's solar cell chip arrays of an embodiment again.
Figure 13 is the assembling schematic diagram of the solar cell chip module according to the application.
Figure 14 is the wire in tension schematic diagram of comparative example 1.
Figure 15 is the polarization curve of Sn-Bi alloy and Sn-Pb alloy.
Reference numeral:
Cell piece assembly 100;
Upper glass plates 10;
Front adhesive film 20;
Cell piece array 30; Cell piece 31; First cell piece 31A; Second cell piece 31B; Cell piece matrix 311; Secondary grid line 312; The secondary grid line 312A in front; The secondary grid line 312B in the back side; The secondary grid line 3121 in edge; Middle secondary grid line 3122; Weld part 3123; Back of the body electric field 313; Back electrode 314;
Conductor wire 32; Front side conductive line 32A; Back side conductor wire 32B; Wire body 321; Weld layer 322; Short grid line 33;
Back side adhesive film 40;
Steam insulating back panel 50; Reflecting coating 51;
U-shaped frame 60;
Terminal box 70;
Mounting blocks 80.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
In this application, in order to clearly describe with being convenient to, below part term is made an explanation.
Term " cell piece 31 " comprises cell piece matrix 311, the secondary grid line 312 be located on cell piece matrix 311 front, the back of the body electric field 313 being located at the back side of cell piece matrix 311 and the back electrode 314 be located on back of the body electric field 313, thus, secondary grid line 312 also can be called the secondary grid line 312 of cell piece 31, back of the body electric field 313 also can be called the back of the body electric field 313 of cell piece 31, and back electrode 314 also can be called the back electrode 314 of cell piece 31.
The intermediate products that " cell piece matrix 311 " such as can be obtained after the operations such as making herbs into wool, diffusion, etching edge, deposited silicon nitride layer by silicon chip, but it will be appreciated that, in the application, cell piece matrix 311 is not limited to be made up of silicon chip, such as, also can comprise thin-film solar cells matrix or other any suitable solar cell sheet matrixes 311.
In other words, cell piece 31 comprises silicon chip, to the back of the body electric field 313 of some processing layers of silicon chip surface, the secondary grid line of sensitive surface and shady face and back electrode 314, or equivalent other class solar cells not having front electrode, such as various hull cell: the non-crystalline silicon batteries such as amorphous silicon film battery (a-Si), cadmium-Te solar battery (CdTe), CIGS solar cell (CIGS), gallium arsenide solar cell, nano titanium oxide dye-sensitized solar cells.
The conductor wire 32 that term " battery unit " comprises cell piece 31 and is made up of wire S.
Term " solar cell chip arrays 30 " comprises multiple cell piece 31 and is connected with by adjacent cell sheet 31 and the conductor wire 32 be made up of wire S, and in other words, solar cell chip arrays 30 is arranged by multiple cell piece 31 be connected by conductor wire 32 and forms.
In solar cell chip arrays 30, wire S forms the conductor wire 32 of battery unit, broad understanding should be made between the surface that wire S extends in adjacent cell sheet 31, wire S can extend between the front of adjacent cell sheet 31, between the front that also can extend in a cell piece 31 in adjacent cell sheet 31 and the back side of another cell piece 31.When wire S extends between the front of a cell piece 31 in adjacent cell sheet 31 and the back side of another cell piece 31, conductor wire 32 can comprise extend in cell piece 31 front on and the front side conductive line 32A be electrically connected with the secondary grid line 312 of cell piece 31, and on the back side extending in cell piece 31 and the back side conductor wire 32B be electrically connected with the back electrode 314 of cell piece 31, the part of wire S between adjacent cell sheet 31 can be called connection conductor wire.
In this application, cell piece matrix 311, cell piece 31, battery unit, cell piece array 30 and solar module are only used to be convenient to describe, and can not be interpreted as the restriction to the application.
The all scopes disclosed in the application all comprise end points and can independently combine.The end points of the scope disclosed in the application and any value are all not limited to this accurate scope or value, and these scopes or value should be understood to the value comprised close to these scopes or value.
In this application, except as otherwise noted, directional terminology is as shown in the drawings upper and lower in " upper and lower " typically refers to; " front " refers to solar module one side towards light in application process, is also sensitive surface; " back side " refers to solar module one side back to light in application process.
The solar cell chip module according to the embodiment of the present application is specifically described below in conjunction with accompanying drawing.
As shown in figure 1 to figure 13, comprise upper glass plates 10 stacked successively, front adhesive film 20, solar cell chip arrays 30, back side adhesive film 40 and steam insulating back panel 50 according to the solar module of the embodiment of the present application, water vapor transmittance WVTR is less than or equal to 0.1mg/m 2/ day, preferably, the permeability rate of steam insulating back panel is 0, air penetrability is 0, and solar cell chip arrays 30 comprises multiple cell piece 31 and conductor wire 32, is connected between adjacent cell sheet 31 by described conductor wire 32, the front of cell piece 31 has secondary grid line 312, conductor wire 32 is welded with secondary grid line 312 by weld layer, and weld layer contains alloy, and alloy contains Sn and Bi.
In other words, solar module according to the embodiment of the present application comprises upper glass plates 10, front adhesive film 20, solar cell chip arrays 30, back side adhesive film 40 and steam insulating back panel 50 from top to bottom successively, wherein, solar cell chip arrays 30 is made up of at least two cell pieces 31, be connected by many conductor wires 32 between adjacent two cell pieces 31, conductor wire 32 is welded by the secondary grid line 312 of weld layer with the front of cell piece 31, and weld layer mainly comprises the alloy including Sn and Bi.
Conductor wire 32 and secondary grid line 312 are weldingly connected, and drift and rosin joint can not occur the conductor wire 32 in solar module, and show relatively high electricity conversion.
According to the solar module of the embodiment of the present application, steam insulating back panel 50 can be glass or metallic plate, and wherein, metallic plate can be aluminium sheet.
It should be noted that, the glass that the application adopts levels closely knit and steam insulating back panel, can be good at intercepting the steam in environment, corrosive gas enters component internal.And the low-melting alloy that the weld layer that conductor wire 32 welds with secondary grid line 312 adopts is the alloy containing Sn, Bi metal, its corrosion resistance is lower than the metal Sn on welding surface in traditional components, the phenomenon such as variable color, blackout can be there is because of oxidation under common encapsulation condition, affect assembly life-span.And the application is all-sealed structure, energy available protecting Sn, Bi alloy, there will not be metachromatism, reduce the corrosion of cell piece array 30, effectively protect cell piece array 30, the assembly that slows down is decayed, and extends assembly life-span.
Thus, according to the solar module 100 of the embodiment of the present application, secondary grid line 312 on cell piece 31 is weldingly connected by the weld layer of the alloy containing Sn and Bi with conductor wire 32, effectively can improve the connection effect of conductor wire 32 and cell piece 31, ensure photoelectric conversion efficiency, and upper glass plates 10, front adhesive film 20, back side adhesive film 40 and steam insulating back panel 50 can effective sealing weld layers, there will not be metachromatism, reduce the corrosion of cell piece array, available protecting protects cell piece array, slow down the decay of solar module, extend useful life.
According to an embodiment of the application, solar cell chip arrays 30 comprises multiple cell piece 31, be connected by wire between adjacent cell sheet 31, between the surface of the cell piece 31 of wire in adjacent cell sheet 31 and the surface of another cell piece 31, reciprocation extension is to form multiple conductor wire 32, the front of cell piece 31 is provided with secondary grid line 312, and conductor wire welds with secondary grid line 312.
Here, cell piece 31 forms battery unit with the conductor wire 32 be made up of the wire S extended on this cell piece 31 surface, in other words, solar cell chip arrays 30 according to the embodiment of the present application is made up of multiple battery unit, and the conductor wire 32 of multiple battery unit is made up of the wire S of reciprocation extension on the surface of adjacent cell sheet 31.
It is to be appreciated that in this application, term " reciprocation extension " also can be called " coiling ", can refer to that wire S extends along reciprocal stroke between the surface of cell piece 31.
In this application, " wire S reciprocation extension is between the surface of cell piece 31 " should make broad understanding, such as, wire S can between the surface of the cell piece 31 of reciprocation extension in adjacent cell sheet 31 and the surface of another cell piece 31, wire S also can extend through the surface of intermediate cell sheet 31 surface to last cell piece 31 of predetermined quantity from the surface of first cell piece 31, then return from the surface of last cell piece 31 and extend through the surface of surface to the first cell piece 31 of the intermediate cell sheet 31 of described predetermined quantity, repetition like this.
In addition, when cell piece 31 is in parallel by wire S, wire S can reciprocation extension on the front of cell piece, in the case, wire S forms the front side conductive line 32A of cell piece, alternatively, wire S reciprocation extension on the front of cell piece 31 and different wire S reciprocation extensions on the back side of cell piece 31, in the case, the wire S extended on cell piece 31 front forms front side conductive line 32A, and the wire S extending in the back side of cell piece 31 forms back side conductor wire 32B.
When cell piece 31 is one another in series by wire S, between the front of the cell piece 31 of wire S reciprocation extension in adjacent cell sheet 31 and the back side of another cell piece 31, in the case, the part that wire S extends on the front of a cell piece 31 forms front side conductive line 32A, and the part that wire S extends on the back side of another cell piece 31 adjacent forms back side conductor wire 32B.In this application, unless expressly stated otherwise, conductor wire 32 can be understood as front side conductive line 32A, back side conductor wire 32B, or front side conductive line 32A and back side conductor wire 32B.
Here, term " reciprocation extension " be can be understood as wire S extension " one back and forth " formation two conductor wires 32, two conductor wires 32 and is formed by an one metal wire S coiling, such as, adjacent two conductor wires form U-shaped structure or v-shaped structure, but the application is not limited to this.
According to the cell piece array 30 of the embodiment of the present application, multiplely be positioned at the conductor wire 32 on cell piece and be made up of the wire S of reciprocation extension, and be connected by conductor wire 32 between adjacent cell sheet 31, therefore, cell piece surface is without the need to printing expensive silver-colored main grid, and manufacturing process is simple, connects cell piece without the need to using welding, the secondary grid line of wire S and cell piece and the easy to connect of back electrode, the cost of cell piece reduces greatly.
In addition, when cell piece 31 is in parallel by wire S, wire S can reciprocation extension on the front of two cell pieces, in the case, wire S forms the front side conductive line 32A of two cell pieces of this parallel connection, alternatively, wire S reciprocation extension is on the front of a cell piece 31 and by another wire S reciprocation extension on the back side of this cell piece 31, in the case, the wire S extended on cell piece 31 front forms front side conductive line 32A, and the wire S extending in the back side of cell piece 31 forms back side conductor wire 32B.
According to embodiments of the invention, the front of cell piece 31 is provided with secondary grid line 312 and short grid line 33, the secondary grid line 3121 in edge that secondary grid line 312 comprises the secondary grid line 3122 in the centre crossing with conductor wire 32 and do not intersect with conductor wire 32, short grid line 33 is connected with the secondary grid line 3121 in edge, and short grid line 33 is connected with secondary grid line 3122 in the middle of conductor wire 32 or at least one.
The solar cell that the application connects for this type of conductor wire 32, the front of cell piece 31 arranges short grid line 33 and solves the precision problem that conductor wire 32 is connected with cell piece 31, prevent current loss, technique is simple, easily realizes, significantly reduces process costs.
Wherein, the secondary grid line 312 being positioned at a side surface of cell piece matrix 311 comprises two parts, wherein a part of secondary grid line 312 is crossing with conductor wire 32, the secondary grid line 312 of this part is positioned at the centre position of cell piece matrix 311 and forms middle secondary grid line 3122, and the secondary grid line 312 of another part is not crossing with conductor wire 32, the secondary grid line 312 of this part is positioned at the edge of the side away from conductor wire 32 of cell piece matrix 311, forms the secondary grid line 3121 in edge.
The secondary grid line 3121 in edge is provided with the short grid line 33 be connected with secondary grid line 3122 in the middle of conductor wire 32 or at least one, in specific embodiment, short grid line 33 is arranged in conductor wire 32 cannot arrive cell piece 31 edge portions in coiling arrangement process, can avoid cannot reaching in the process owing to arranging in conductor wire 32 coiling the secondary grid line 312 of the edge portions of cell piece 31 and the portion of electrical current waste that causes.
Alternatively, after wire is connected with cell piece 31, wire disconnects at the place of turning back that reciprocation extension is formed.
Preferably, the secondary grid line 3122 in centre that short grid line 33 is nearest with the secondary grid line 3121 in distance edge is connected.
In other embodiments of the application, short grid line 33 is connected with conductor wire 32.Preferably, the place of turning back that short grid line 33 is formed with the wire reciprocation extension on the front of cell piece 31 is connected, and can increase a solder joint, reduces the possibility that welding position, edge disconnects, further enhances the adhesion of wire and cell piece.Can be understood as being connected with the place of turning back herein short grid 33 and there is intersection point with the place of turning back, namely short grid 33 not stop at the place of turning back.
According to an embodiment of the application, short grid line 33 is perpendicular to secondary grid line 312.Short grid line 33 is preferably electrically connected with the bending part (end near edge portions) of the conductor wire 32 on the sensitive surface of cell piece 31, more preferably, arranges at least one short grid line 33 corresponding to each bending part.
Under normal circumstances, because the distance between the bending part of conductor wire 32 and the edge of cell piece 31 is shorter, the length of this short grid line 33 can be 1-10 millimeter usually, is preferably 2.4-7mm.The width of this short grid line 33 can be 0.05-0.5mm, and thickness can be 0.01-0.02mm.The radical of short grid line 33 is 3-40 root, is preferably 6-20 root.
The set-up mode of short grid line 33 can be identical with the secondary grid line 312 on the sensitive surface of cell piece 31, such as, can print by method for printing screen and secondary grid line 312 simultaneously, and the secondary grid line 3121 in during printing and front be same half tone, and its material can be silver-colored slurry.
Alternatively, after being connected with cell piece 31 by wire, wire disconnects at the place of turning back.Wire disconnects wire and forms multiple relatively independent conductor wire 32 after welding with cell piece 31 at the place of turning back wiry.
Wire is disconnected at the place of turning back wiry after wire welds with cell piece 31, make between multiple conductor wire 32 relatively independent, the stress between cell piece can be reduced, reduce the peeling force of wire and cell piece binding site, further increase the electricity conversion of solar cell chip arrays 30.
Therefore, according to the solar cell chip module 100 of the embodiment of the present application, cost is low, photoelectric conversion efficiency is high.
In some embodiments of the application, alternatively, alloy is also containing at least one metal be selected from Cu, In, Ag, Sb, Pb and Zn.
Preferably, with the total weight of this alloy for benchmark, the content of Bi is 15-60 % by weight, the content of the content of Sn to be the content of 30-75 % by weight, Cu be 0-20 % by weight, In is 0-40 % by weight, the content of Ag is 0-3 % by weight, the content of Sb is the content of 0-20 % by weight, Pb is 0-10 % by weight, and the content of Zn is 0-20 % by weight.
Further, alloy can for being selected from least one in 50%Sn-48%Bi-1.5%Ag-0.5%Cu, 58%Bi-42%Sn and 65%Sn-20%Bi-10%Pb-5%Zn.
It will be understood by those skilled in the art that, under the same conditions, Sn-Bi alloy is not easy oxidized compared to Sn-Pb alloy, and namely the stability of Sn-Bi alloy is relatively higher, for the requirement of water vapor transmittance, the requirement of Sn-Bi alloy will lower than the requirement of Sn-Pb alloy.Specific to the solar cell of the application, usually Sn-Pb alloy is adopted to weld in this area, if adopt the relative higher Sn-Bi alloy of stability to weld, in theory, the backboard adopted when adopting Sn-Pb alloy to weld in solar cell, can meet the anti-oxidant requirement of Sn-Bi alloy when adopting Sn-Bi alloy to weld completely.
But present inventor finds through long-term experiment and research, and in wet condition, the oxidation rate of Sn-Bi alloy is higher than the oxidation rate of Sn-Pb alloy.For this reason, the steam breathability of inventor to the oxidation rate of Sn-Bi alloy and backboard can conduct in-depth research, and finds, when the water vapor transmittance of backboard is greater than 0.1mg/m 2during/day, the increase along with water vapor transmittance is sharply accelerated by the oxidation rate of Sn-Bi alloy, and when the water vapor transmittance of backboard is less than or equal to 0.1mg/m 2during/day, there is not marked change along with the change of water vapor transmittance in the oxidation rate of Sn-Bi alloy.
And in order to solve the problem that SnBi alloy is easily oxidized, the glass that the application adopts levels closely knit and steam insulating back panel, and the water vapor transmittance of back veneer material is lower than 0.1mg/m 2/ day; effectively can avoid the oxidation of Sn-Bi alloy material; can be good at intercepting the steam in environment, corrosive gas enters inside solar energy battery, avoid Sn-Bi alloy and can occur the phenomenon such as variable color, blackout because of oxidation under common encapsulation condition, affect solar battery life; thus energy available protecting Sn-Bi alloy; there will not be metachromatism, reduce the corrosion of solar cell, effectively protect solar cell; the solar cell that slows down is decayed, and extends solar battery life.
Particularly, according to a kind of preferred implementation of the application, secondary grid line 312 and conductor wire 32 are by being located on secondary grid line 312 or coated weld layer on the metal filament welds.Alternatively, the position contacted with secondary grid line 312 and/or the back electrode 314 of cell piece 31 at conductor wire 32 is provided with weld layer, and more preferably, the position contacted with back electrode 314 at conductor wire 32 and the secondary grid line 312 of cell piece 31 is provided with weld layer.Weld layer only can be executed and be overlying on secondary grid line 312 and back electrode 314, also can execute and be overlying on conductor wire 32.
In cell piece array 30, the thickness of weld layer and the diameter ratio of conductor wire 32 (comprising front side conductive line 32A and back side conductor wire 32B) can be 0.02-0.5:1.
In this application, when the position contacted with secondary grid line 312 and/or the back electrode 314 of cell piece 31 at conductor wire 32 (comprising front side conductive line 32A and back side conductor wire 32B) is provided with weld layer, conductor wire 32 can be the wire of the non-clad welded layer of this area routine, such as copper wire.
In one embodiment, conductor wire 32 (comprising front side conductive line 32A and back side conductor wire 32B) has the wire of low-melting alloy layer for Surface coating.Low-melting alloy layer can be surface completely coated, also can surface portion coated.When low-melting alloy layer surface portion is coated, low-melting alloy layer is preferably formed in the position of welding with the secondary grid line 312 of cell piece 31 and/or back electrode 314.When low-melting alloy layer surface complete coated time, low-melting alloy layer can be coated on the periphery of wire body with the form of ring-type.The thickness of low-melting alloy layer can be selected in the larger context.Under preferable case, the thickness of low-melting alloy layer is 1-100 micron, is more preferably 1-30 micron.The low-melting alloy forming low-melting alloy layer can be the low-melting alloy of this area routine, and its fusing point can be 100-220 DEG C.Under preferable case, low-melting alloy is Bi-Sn-Pb alloy, such as Sn content is 40 % by weight, Bi content be 55 % by weight and Pb content be 5 % by weight namely alloy (also Sn40%-Bi55%-Pb5%).The thickness of low-melting alloy layer can be 0.001-0.06mm.The cross-sectional area of conductor wire 32 can be 0.01-0.5mm 2.The wire body that wire body can be commonly used for this area, as copper wire.
In cell piece array 30, cell piece 31 can adopt the cell piece 31 of this area routine, such as, can be polycrystalline silicon battery plate 31.Secondary grid line 312 on the sensitive surface of cell piece 31 can be silver, copper, tin, ashbury metal etc.The width of secondary grid line 312 can be 40-80 micron, and thickness can be 5-20 micron, and secondary grid line 312 can be 50-120 bar, and the spacing of adjacent two secondary grid lines 312 can be 0.5-3mm.The material of the back electrode 314 on the back side of cell piece 31 can be silver, copper, tin, ashbury metal etc., and back electrode 314 is generally banded, and its width can be 1-4mm, and thickness can be 5-20 micron.
Below with reference to the accompanying drawings solar cell chip arrays 30 according to the application's specific embodiment is described.
With reference to figure 1-3, the solar cell chip arrays 30 according to the application's specific embodiment is described.
In the embodiment shown in Fig. 1-3, show two cell pieces of solar cell chip arrays 30, in other words, two cell pieces 31 that the conductor wire 32 shown by being made up of wire S is connected with each other.
Be understandable that, cell piece 31 comprises cell piece matrix 311, the secondary grid line 312 (i.e. the secondary grid line 312A in front) be located on the front of cell piece matrix 311, the back electrode 314 being located at the back of the body electric field 313 on the back side of cell piece matrix 311 and being located on back of the body electric field 313.In this application, it will be appreciated that, unless expressly stated otherwise, back electrode 314 can be the back electrode of conventional batteries sheet, such as, starch printing by silver and formed, and also can be the secondary grid line 312B in the back side of the secondary grid line be similar on cell piece front side of matrix, also can be discrete multiple weld parts, in this application, unless expressly stated otherwise, secondary grid line refers to the secondary grid line 312 on the front of cell piece matrix 311.
As Figure 1-3, in this embodiment, solar cell chip arrays comprises two cell pieces (for convenience, referred to herein as the first cell piece 31A, second cell piece 31B), wire S reciprocation extension is at the front (sensitive surface of the first cell piece 31A, upper surface in Fig. 2) and the back side of the second cell piece 31B between, thus, wire S constitutes the front side conductive line of the first cell piece 31A and the back side conductor wire of the second cell piece 31B, and wire S welds with the secondary grid line of the first cell piece 31A and welds with the back electrode of the second cell piece 31B.
In an embodiment of the application, the back side of pond sheet matrix 311 is provided with back electrode 314, and wire and back electrode 314 are weldingly connected.
That is, in this embodiment, the front of cell piece matrix 311 is provided with the secondary grid line 312A in front, the back side of this cell piece matrix 311 is provided with back electrode 314, when conductor wire 32 is positioned at the front of cell piece matrix 311, conductor wire 32 is weldingly connected with the secondary grid line 312A in front, when conductor wire 32 is positioned at the back side of cell piece matrix 311, is then weldingly connected with the back electrode 314 at the back side of this cell piece matrix 311.
In certain embodiments, wire reciprocation extension 10-60 time between the first cell piece 31A and the second cell piece 31B, preferably, as shown in Figure 1, wire reciprocation extension 12 times is to form 24 conductor wires, and wire is single, in other words, single metal wire reciprocation extension forms 24 conductor wires 12 times, and the spacing between adjacent conductive line can be 2.5 millimeters-15 millimeters.According to this embodiment, compared with the conductor wire of conventional batteries sheet, quantity increases, thus reduces electric current from secondary grid line to the distance of conductor wire, decreases resistance, improves electricity conversion.In the embodiment shown in fig. 1, adjacent conductive line forms U-shaped structure, is convenient to coiling wiry thus.Alternatively, the application is not limited to this, and such as, adjacent conductive line also can form v-shaped structure.
More preferably, as shown in Figure 4, wire S comprises wire body 321 and the coated weld layer 322 of outer surface thereof, wire is welded with secondary grid line and/or back electrode by coated weld layer 322, thus, be convenient to the electrical connection of wire and secondary grid line and/or back electrode, avoid wire drift in connection procedure and affect photoelectric conversion efficiency.Certainly, the electrical connection of wire and cell piece can be carried out in the lamination process of solar module, also can carry out before being laminated, preferably, connect before being laminated.
Wherein it should be noted that, in this application, wire S refers to that reciprocation extension forms the wire of conductor wire 32 on cell piece 31, conductor wire 32 can comprise the weld layer 322 of wire body 321 and wire body 321 external sheath, namely wire S also can comprise wire body 321 and be coated on the outer field weld layer 322 of wire body 321, in the embodiment of the application, if without specified otherwise, wire refers to that reciprocation extension forms the wire S of conductor wire 32 on cell piece 31.
In certain embodiments, preferably, wire body 321 is copper wire, and certainly, wire S also can be copper wire, i.e. wire S not clad welded layer 322, but the application is not limited to this, and such as wire body 321 also can be aluminium wire.Preferably, wire S has circular cross section, and thus, more sunlight can be irradiated on cell piece matrix, improves photoelectric conversion efficiency further.
In certain embodiments, preferably, before wire contacts with cell piece, wire extends in a tensioned state, stretching by wire, after being connected with the secondary grid line and back electrode of cell piece, tensile force wiry can be discharged, avoid the conductor wire drift when preparing solar module thus further and affect photoelectric conversion efficiency.
Fig. 5 shows the schematic diagram of the cell piece array of another embodiment according to the application.As shown in Figure 5, wire reciprocation extension is between the front of the first cell piece 31A and the front of the second cell piece 31B, thus, wire forms the front side conductive line of the first cell piece 31A and the front side conductive line of the second cell piece 31B, in the case, first cell piece 31A and the second cell piece 31B is connected in parallel to each other, certainly, be understandable that, preferably, the back side conductor wire that the back electrode of the first cell piece 31A and the back electrode of the second cell piece 31B also can be formed by another wire reciprocation extension is connected, alternatively, the back electrode of the first cell piece 31A also can be connected by traditional mode with the back electrode of the second cell piece 31B.
Below with reference to Fig. 6, the solar cell chip arrays 30 according to another embodiment of the application is described.
Comprise n × m cell piece 31 according to the solar cell chip arrays 30 of the embodiment of the present application, in other words, multiple cell pieces 31 are arranged into the matrix form of n × m, and wherein n is columns, and m is row.More specifically, in this embodiment, 36 cell pieces 31 are arranged in 6 row and 6 rows, i.e. n=m=6.Be understandable that, the application is not limited to this, and such as, row and columns can be unequal.For convenience, in figure 6, along direction from left to right, cell piece 31 in same row's cell piece 31 is called the first, second, third, fourth, the 5th and the 6th cell piece 31 successively, along direction from the top down, the row of cell piece 31 is called the first, second, third, fourth, the 5th and the 6th row's cell piece 31 successively.
In same row's cell piece 31, wire reciprocation extension is between the surface of a cell piece 31 and the surface of another adjacent cell piece 31, in adjacent two row's cell pieces 31, between the surface of a cell piece 31 during the surface of the cell piece 31 of wire reciprocation extension in a row and a+1 arrange, and m-1 >=a >=1.
As shown in Figure 6, in concrete example, in same row's cell piece 31, wire reciprocation extension is between the front of a cell piece 31 and the back side of another adjacent cell piece 31, and thus, the cell piece 31 in same row is one another in series.In adjacent two row's cell pieces 31, wire reciprocation extension is in the front of the cell piece 31 of an end of arranging at a and between the back side of a cell piece 31 of the end that a+1 arranges, and adjacent two row's cell pieces 31 are one another in series thus.
More preferably, in adjacent two row's cell pieces 31, wire reciprocation extension is on the surface of the cell piece 31 of an end of arranging at a and between the surface of the cell piece 31 of the end that a+1 arranges, the end that an end of a row and a+1 arrange is positioned at the same side of matrix, such as in figure 6, the right side of matrix is positioned at.
More specifically, in the embodiment shown in fig. 6, in the first row, between the back side between the front of one one metal wire reciprocation extension first cell piece 31 and the second cell piece 31, between the back side between the front of the second one metal wire reciprocation extension second cell piece 31 and the 3rd cell piece 31, between the back side between the front of the 3rd one metal wire reciprocation extension the 3rd cell piece 31 and the 4th cell piece 31, between the back side between the front of the 4th one metal wire reciprocation extension the 4th cell piece 31 and the 5th cell piece 31, between the back side between the front of the 5th one metal wire reciprocation extension the 5th cell piece 31 and the 6th cell piece 31, thus, adjacent cell sheet 31 in first row is one another in series by corresponding wire.
Between the back side between the 6th cell piece 31 in the front of the 6th cell piece 31 in six roots of sensation wire reciprocation extension first row and adjacent second row, thus, first row and second row are one another in series, between the back side in the front of the 6th cell piece 31 in the 7th one metal wire reciprocation extension second row and second row between the 5th cell piece 31, between the back side in the front of the 5th cell piece 31 in the 8th one metal wire reciprocation extension second row and second row between the 4th cell piece 31, until between the back side in the front of the second cell piece 31 in the 11 one metal wire reciprocation extension second row and second row between the first cell piece 31, then, the front and the 3rd of the first cell piece 31 in the 12 one metal wire reciprocation extension second row arrange between the back side between the first cell piece 31, second row and the 3rd is arranged and is one another in series thus.Then, successively the 3rd row and the 4th is arranged and connect, 4th row and the 5th arranges and connects, 5th row and the 6th arranges and connects, complete the preparation of cell piece array 30 thus, in this embodiment, busbar is set in the left side of the left side of the first cell piece 31 of first row and the 6th the first cell piece 31 arranged, a busbar connects the conductor wire extended from the left side of the first cell piece 31 of first row, and another busbar connects the conductor wire extended from the left side of first cell piece 31 of the 6th row.
As shown in the figure and above-mentioned, connection between the cell piece of the embodiment of the present application adopts conductor wire series connection, conductor wire is all adopted to realize series connection between first row, second row, the 3rd row, the 4th row, the 5th row and the 6th row, as shown in the figure, alternatively, also can be in parallel for preventing the diode of spottiness between second row and the 3rd row, between the 4th row and the 5th row, the connection of diode can adopt the technology of well known to a person skilled in the art, such as busbar.
But, the application is not limited to this, such as, can connect between first row and second row, the 3rd row and the 4th row's series connection, the 5th row and the 6th row's series connection, second row and the 3rd row's parallel connection simultaneously, 4th row and the 5th row's parallel connection, in the case, can arrange in the left side of respective row or right side and arrange busbar respectively.
Alternatively, the cell piece 31 in same row can be in parallel, and such as, an one metal wire passes through the front of the second to the 6th cell piece 31 from the front reciprocation extension of the first cell piece 31 first row.
According to an embodiment of the application, the width of secondary grid line 312 is 40-80 micron, and thickness is 5-20 micron, and secondary grid line is 50-120 bar, and the spacing of adjacent pair grid line is 0.5-3mm.Thus, the secondary grid line 312 of this structure can weld with conductor wire 32 better, and improves photoelectric conversion efficiency.
Preferably, front adhesive film 20 and back side adhesive film 40 are silica gel, are through the ultraviolet light absorbed by EVA ultraviolet absorber, to be converted to electric energy relative to traditional its advantage of EVA encapsulating film, increase the output of photovoltaic module; Second point is that novel encapsulating film is very stable under UV-irradiation, and the Small molecular such as non-degradable generation acetic acid, corrosion cell sheet, weatherability is better.In addition, water vapor transmittance is adopted to be less than or equal to 0.1mg/m 2the steam insulating back panel of/day, and secondary grid line on cell piece and conductor wire are weldingly connected by the weld layer of the alloy containing Sn and Bi, effectively can improve the connection effect of conductor wire and cell piece, ensure photoelectric conversion efficiency.
The silica gel used in current pellosil assembly is a kind of thermoplastic membrane structure, is solid-state under normal temperature, and temperature is softened after raising gradually.And transparent liquid silica gel is a kind of two component silica gel, can be solidified into heat cured transparent silica gel 70 ~ 130 DEG C of laminated after two components are good with 1:1 Homogeneous phase mixing, laminating temperature is low, saves the energy, and contributes to the prolonged layer press life-span.The upper glass plates 10 of solar module of the present invention and backboard are all the glass of rigidity, to be more convenient for gluing and lamination than the Normal back plate of macromolecular material.Assembly temperature when reality uses may reach 80 ~ 100 DEG C, and at such a temperature, thermoplastic film can soften, and have certain mobility, and thermosetting film does not have this problem, and assembly heat resistance is higher.
As shown in Figure 10, further, the inner side of steam insulating back panel 50 is coated with the reflecting coating 51 of adularescent.The application is coated with the reflecting coating 51 of adularescent in the inner side of steam insulating back panel, the light reflection through cell piece 31 gap can be gone back to reduce encapsulation loss.
The application uses glass or metallic plate as backboard, compared with the macromolecule backboard of routine, has excellent decay resistance, weatherability and resistance to wear, by the electronic component of inside and external environment is completely isolated comes, extends assembly life-span.
In a preferred embodiment, the sealant sealing of butyl rubber or Oppanol is clamped between the outer of upper glass plates 10 and the outer of steam insulating back panel 50.
The application uses the butyl rubber or Oppanol that water vapor transmittance is extremely low inside most outer between layer glass, compensate for original photovoltaic module edge and encapsulating material is exposed to outer deficiency, in conjunction with the glass that levels is closely knit, can be good at intercepting the steam in environment, corrosive gas enters component internal, the assembly that slows down is decayed, and extends assembly life-span.
Further preferably, upper glass plates 10 and steam insulating back panel plate 50 outer utilize silica gel or butyl rubber or two-sided tape to fix by U-shaped frame 60, and are filled with fluid sealant between the outer of upper glass plates 10 and steam insulating back panel 50 and U-shaped frame 60.
The application uses silica gel or butyl rubber or two-sided tape to be fixed by U-shaped frame in the outer of layer glass, frame material is aluminium or macromolecular material.The assembly of this structure due to the corner of toughened glass easily stressed and cracked, fail safe is lower, transport and when installing risk larger.After using the protection of U-shaped rigid border, two edge of glass assembly and the impact resistant capability of corner have had and have improved greatly, and further enhance the sealing effectiveness of assembly.
As shown in figure 13, according to the solar module of the embodiment of the present application, also comprise terminal box 70, terminal box 70 is located at the edge of upper glass plates 10 and steam insulating back panel 50.
In the application, terminal box 70 is arranged on the edge of solar module, instead of at the perforate of the solar module back side or fluting, maintains the complete structure of back glass, and can not form stress concentration point, fail safe is higher.In addition, this distribution of terminal box 70 can reduce the length of the inner busbar of solar module and External cable relative to traditional components, provide cost savings, and decreases resistance increase power stage.
In the preparation process of the solar module provided in the application, first conductor wire 32 can be welded with the secondary grid line 312 on cell piece and back electrode, then each layer be carried out stacked and lamination.
A specific embodiment of the present invention, solar module 100 comprises upper cover plate 10, front adhesive film 20, cell piece array 30, back side adhesive film 40 and steam insulating back panel 50.Cell piece array 30 comprises multiple cell piece 31, be connected by many conductor wires 32 between adjacent cell sheet 31, conductor wire 32 is formed by the wire S of reciprocation extension between the surface of adjacent cell sheet, conductor wire 32 welds with secondary grid line, and front adhesive film 20 directly contacts with conductor wire 32 and is filled between adjacent conductor wire 32.
In other words, stacked upper cover plate 10, front adhesive film 20, cell piece array 30, back side adhesive film 40 and backboard 50 is successively comprised along the vertical direction according to the solar module 100 of the embodiment of the present application, cell piece array 30 comprises multiple cell piece 31 and the many conductor wires 32 being connected multiple cell piece 31, conductor wire 32 is made up of wire S, and wire S reciprocation extension is on the surface of adjacent two cell pieces 31.
Conductor wire 32 is electrically connected with cell piece 31, wherein, front adhesive film 20 on cell piece 31 directly contacts with conductor wire 32 and is filled between adjacent conductor wire 32, front adhesive film 20 both can play the effect of fixing conductor wire 32, conductor wire 32 can be completely cut off with outside air and steam again, thus avoid conductor wire 32 oxidized, ensure that photoelectric conversion efficiency.
Thus, according to the solar module 100 of the embodiment of the present application, replaced main gate line and the welding of conventional batteries sheet by the conductor wire 32 be made up of the wire S of reciprocation extension, reduce cost; The wire S of reciprocation extension decreases the number of the free end of wire S, and when arranging wire S, requisite space is little, and not by spatial limitation, the radical of the conductor wire 32 be made up of wire S reciprocation extension can significantly improve, and preparation is simple, can produce in batches; Front adhesive film 20 directly contacts with conductor wire 32 and is filled between adjacent conductor wire 32, effectively by isolated to conductor wire 32 and outside air, steam etc., can avoid the oxidation of conductor wire 32, effectively can ensure electricity conversion.
In some embodiments of the application, reciprocation extension between the front of the cell piece 31 of wire S in adjacent cell sheet 31 and the back side of another cell piece 31, front adhesive film 20 directly contacts with the conductor wire 32 on the front of a cell piece 31 and is filled between the adjacent conductive line 32 on the front of a cell piece 31, and back side adhesive film 40 directly contacts with the conductor wire 32 at the back side of another cell piece 31 and is filled between the adjacent conductive line 32 at the back side of another cell piece 31.
That is, in this application, adjacent two cell pieces 31 are connected by wire S-phase, and in adjacent two cell pieces 31, the front of a cell piece 31 and wire S-phase connect, and the back side of another cell piece 31 and wire S-phase connect.
Wherein, front adhesive film 20 on the cell piece 31 that front and wire S-phase connect directly contacts with the wire S in this cell piece 31 front and is filled between adjacent conductor wire 32, and the back side adhesive film 40 of the cell piece 31 that the back side connects with wire S-phase directly contacts with the wire S at this cell piece 31 back side and is filled between adjacent conductor wire 32 (as shown in Figure 2).
Thus, according to the solar module 100 of the embodiment of the present application, not only the conductor wire 32 in the front of a part of cell piece 31 can separate with the external world by front adhesive film 20, the conductor wire 32 at the back side of percentage of batteries sheet 31 also can separate with the external world by back side adhesive film 40, can ensure the photoelectric conversion efficiency of solar module 100 further.
In some embodiments of the application, the size for the cell piece of routine is 156mm × 156mm; The series resistance of solar module is 380-440 milliohm/60 slice, and simultaneously the application is not limited to 60, can be 30,72 etc., when being 456-528 milliohm for the series resistance of solar module when 72, and the excellent electrical property of battery.
In some embodiments of the application, the size for the cell piece of routine is 156mm × 156mm; The open circuit voltage of solar module is 37.5-38.5V/60 sheet, and same the application is not limited to 60, can be 30,72 etc.Short circuit current is 8.9-9.4A, and the number of short circuit current and cell piece has nothing to do.
In some embodiments of the application, the fill factor, curve factor of solar module is 0.79-0.82, and it is not by the size of cell piece and the impact of number, and it affects the electrical property of battery.
In some embodiments of the application, the size for the cell piece of routine is 156mm × 156mm; The operating voltage of solar module is 31.5-32V/60 sheet, and same the application is not limited to 60, can be 30,72 etc.Operating current is 8.4-8.6A, and the number of operating current and cell piece has nothing to do.
In some embodiments of the application, the size for the cell piece of routine is 156mm × 156mm; The conversion efficiency of solar module is 16.5-17.4%.Power is 265-280W/60 sheet.
Specifically describe the preparation method of the solar module according to the embodiment of the present application below.
Particularly, comprise the following steps according to the preparation method of the solar module of the embodiment of the present application:
By upper glass plates 10, front adhesive film 20, cell piece array 30, back side adhesive film 40 and steam insulating back panel 50 stack successively, and make the front of cell piece 31 in the face of front adhesive film 20, the back side of cell piece 31 is in the face of back side adhesive film, then carry out lamination and obtain solar module 100, wherein solar cell chip arrays 30 comprises multiple cell piece 31 and conductor wire 32, be connected by described conductor wire between adjacent cell sheet, the front of cell piece 31 has secondary grid line 312, conductor wire 32 is welded with secondary grid line 312 by weld layer, weld layer contains alloy, alloy contains Sn and Bi.
Front adhesive film 20 and back side adhesive film 40 can be the adhesive film that this area routine uses, and preferably, front adhesive film 20 and back side adhesive film 40 are thermosetting silica gel.In this application, thermosetting silica gel can adopt the product of this area routine use or prepare according to method well known to those skilled in the art.
Comprise according to the preparation method of the solar module 100 of the embodiment of the present application and first prepare cell piece array 30, then stacked upper cover plate 10, front adhesive film 20, cell piece array 30, back side adhesive film 40 and steam insulating back panel 50 successively, finally carries out lamination and obtains solar module 100.Be understandable that, the preparation of solar module 100 also comprises other steps, such as use the space between sealant sealing upper cover plate 10 and steam insulating back panel 50, and utilize U-shaped frame to be tightened together by said elements, this it is known to those skilled in the art that, is not described in detail here.
Concrete, the preparation of solar cell chip arrays 30 comprises and is connected with the surface electrical of described cell piece 31 and forms many conductor wires between the surface of cell piece 31 by wire reciprocation extension, and cell piece 31 adjacent thus connected by described many conductor wires and form cell piece array 30.
Particularly, as shown in Figure 7, in a tensioned state, by an one metal wire reciprocation extension 12 times.Then, as shown in Figure 8, the first cell piece 31A and the second cell piece 31B is prepared.Next, as shown in Figure 9, the front of the first cell piece 31A is connected with wire and the back side of the second cell piece 31B is connected with wire, form cell piece array 30 thus, two cell pieces 31 have been shown in Fig. 9, as mentioned above, when cell piece array 30 has multiple cell piece 31, utilize the wire of reciprocation extension to be connected at the back side of the front of a cell piece 31 with another adjacent cell piece 31, be connected with the back electrode wire of another cell piece 31 by the secondary grid line of a cell piece 31.Wire is by reciprocation extension under two clip tensionings laying respectively at these rhizoid two ends.
In the embodiment shown in fig. 9, adjacent cell sheet is one another in series, and as mentioned above, as required, adjacent cell sheet can be connected in parallel to each other by wire.
By the cell piece array 30 for preparing and upper cover plate 10, front adhesive film 20, back side adhesive film 40 and lower-glass or metallic plate 50 stacked successively, and make the front of described cell piece 31 in the face of the back side of described front adhesive film 20, described cell piece 31 in the face of back side adhesive film 40, then carry out lamination and obtain solar module 100.Be understandable that, wire welds with cell piece 31, and the connection of wire and cell piece 31 can be carried out in lamination process, certainly, also can first connect, rear lamination.
Wherein, according to the solar module of the embodiment of the present application in the preparation, wire is reciprocation extension in a tensioned state, and wire reciprocation extension is between the front of a cell piece 31 and the back side of another cell piece 31.Conductor wire 32 comprises the front side conductive line 32A be connected with the secondary grid line on the front of a cell piece 31 and back side conductor wire 32B be connected with the back electrode on the back side of a cell piece 31.Wire reciprocation extension 10-60 time, the spacing between adjacent two conductor wires is 2.5-15mm, and adjacent two conductor wires form U-shaped structure or v-shaped structure.
Alternatively, wire is one, cell piece 31 is arranged into the matrix form of n × m, wherein n is columns, and m is row, in same row's cell piece 31, make wire reciprocation extension between the surface of a cell piece 31 and the surface of another adjacent cell piece 31, in adjacent two row's cell pieces 31, between the surface of a cell piece 31 during the surface of the cell piece 31 of wire reciprocation extension in a row and a+1 are arranged, wherein m-1 >=a >=1.
Preferably, in adjacent two row's cell pieces 31, make wire reciprocation extension on the surface of the cell piece 31 of an end of arranging at a and between the surface of the cell piece 31 of the end that a+1 arranges, the end that an end of a row and a+1 arrange is positioned at the same side of matrix.
Further, in same row's cell piece 31, make wire reciprocation extension between the front of a cell piece 31 and the back side of another adjacent cell piece 31, in adjacent two row's cell pieces 31, make wire reciprocation extension in the front of the cell piece 31 of an end of arranging at a and between the back side of a cell piece 31 of the end that a+1 arranges, with adjacent two row's cell pieces 31 of connecting.
In some embodiments of the application, the wire of reciprocation extension between the adjacent cell sheet 31 of same row is one, and the wire of reciprocation extension between the cell piece 31 of adjacent row is one.Wire is copper wire, and wire has circular cross section.
In other words, following two steps are comprised according to the preparation method of the solar module of the embodiment of the present application:
(1) at least two cell pieces are arranged with a matrix type, and between adjacent two cell pieces 31, make conductor wire between the surface of a cell piece 31 and the surface of another cell piece 31 reciprocation extension to form collapsed shape, and the secondary grid line on the sensitive surface of a cell piece 31 is welded with conductor wire, the back electrode on the back side of another cell piece 31 is welded with conductor wire;
(2) cell piece array 30, back side adhesive film 40 and steam insulating back panel 50 that upper glass plates 10, front adhesive film 20, step (1) obtain are stacked from top to bottom successively, and make the sensitive surface of cell piece 31 in the face of front adhesive film 20, make the back side of cell piece 31 in the face of back side adhesive film 40, then carry out lamination.
In step (1), preferably, between contiguous two row's cell pieces 31, conductor wire is made to extend to the surface of a cell piece 31 in a+1 row from the surface of a cell piece 31 a row; More preferably, conductor wire is made to extend to the surface of the cell piece 31 of an end in a+1 row from the surface of the cell piece 31 of an end a row.
In one embodiment, further preferably, in same row's cell piece 31, conductor wire is made to extend to the back side of another adjacent cell sheet 31 from the sensitive surface bending of a cell piece 31; Between contiguous two row's cell pieces 31, conductor wire is made to extend to the back side of the cell piece 31 of the adjacent end in a+1 row from cell piece 31 sensitive surface of an end a row.
In another embodiment, further preferably, in same row's cell piece 31, conductor wire is made to extend to the sensitive surface of another adjacent cell sheet 31 from the back side bending of a cell piece 31; Between contiguous two row's cell pieces 31, conductor wire is made to extend to the sensitive surface of the cell piece 31 of the adjacent end in a+1 row from cell piece 31 back side of an end a row.
In step (1), conductor wire is coiling arrangement between same row's cell piece 31, and/or conductor wire coiling arrangement between adjacent two row's cell pieces 31.Most preferably, conductor wire between same row's cell piece 31 and adjacent two row cell pieces 31 between all adopt coiling to arrange mode.
In the preparation method of above-mentioned solar module, conductor wire, secondary grid line, wire, low-melting alloy layer, adhesive film, upper glass plates and steam insulating back panel etc. all with describe above identical.
Above-mentioned lamination process can carry out in laminating machine.The lamination process implemented in laminating machine generally includes low temperature and vacuumizes and two stages of hot pressing.
In the preparation method of above-mentioned solar module, welding can adopt the welding manner of this area routine to implement.Under preferable case, the mode of welding is contactless, and wherein, non-contact welding method refers to high-frequency welding or far infrared welding.Adopt contactless welding method can realize the welding of multiple-grid line structure cell piece 31, can avoid occurring rosin joint, and can prevent conductor wire from drifting about.
In some embodiments of the application, after upper glass plates 10, front adhesive film 20, cell piece array 30, back side adhesive film 40 and steam insulating back panel 50 being stacked successively lamination assembling, at the back side of steam insulating back panel 50 bonding mounting blocks 80, mounting blocks 80 is fixed on support.
In the application, the mounting means of solar module is different from the clamp-type installation of the edge that frame is installed or two glass assembly is more general of traditional components, adopt and to use at the back side of assembly that high strength bond is gluing connects four pieces of mounting blocks, mounting blocks is fixed by screws on support.The stressed of installation Assurance component of this mode more evenly enhances the ability of assembly bearing load, more safe and reliable.
In the application, the connected mode of cell piece array 30 is different from general components, the thin copper wire of single plating low-melting alloy is adopted to connect two panels dereliction grid cell sheet, the thin copper wire that can be understood as plating low-melting alloy instead of main grid on conventional crystalline silicon cell piece and welding, eliminates the busbar of the one end without lead-out wire simultaneously.Conveniently the thin copper wire of plating low-melting alloy is called conductor wire by us.This cell piece retains traditional first step front wire mark, and battery makes the grid line of bottom, and we still follow tradition and are called thin grid.Then by diverse ways, wire being bent into many conductor wires perpendicular to thin grid covers on thin grid, forms the conductive grid structure intersected.Compared with traditional three main grid technology, the cross section due to copper cash is circular, effective shading-area can be reduced, reduce ohmic loss simultaneously after making assembly, improves assembly gross power.Because the distribution of 20-30 bar main grid is more intensive, the contact between conductor wire and thin grid is a lot, and more optimize with the path of fine fisssure position electric current conduction hidden the splitting of silicon chip, the loss therefore caused due to fine fisssure is greatly reduced.What is more important is due to conductor wire material employing copper cash, and the ag material consumption of battery also will greatly reduce.
Example 1
Example 1 is for illustration of the example of the solar module 100 and preparation method thereof of the application.
(1) conductor wire is prepared
The surface of copper wire is adhered to one deck 50%Sn-48%Bi-1.5%Ag-0.5%Cu alloy-layer (fusing point is 160 DEG C), and wherein, the cross-sectional area of copper wire is 0.04mm 2, the thickness of alloy-layer is 16 microns, thus obtained conductor wire.
(2) solar module 100 is prepared
The POE adhesive film being of a size of 1630 × 980 × 0.5mm (melt temperature is 65 DEG C) is provided, and correspondingly provides the glass plate that is of a size of 1633 × 985 × 3mm and 60 chip sizes to be the polycrystalline silicon battery plate 31 of 156 × 156 × 0.21mm.Cell piece 31 has 91 secondary grid lines, and (material is silver, width is 60 microns, thickness is 9 microns), the secondary grid line of every bar runs through cell piece 31 substantially in the vertical, and the distance between adjacent pair grid line is 1.7mm, and the back side of cell piece 31 has 5 back electrodes, and (material is tin, width is 1.5 millimeters, thickness is 10 microns), every bar back electrode runs through cell piece 31 substantially in the vertical, and the distance between adjacent two back electrodes is 31mm.
60 cell pieces 31 are arranged with a matrix type (6 row 10 row), between two cell pieces 31 adjacent in same row, make one metal wire state reciprocation extension in tension between the front and the back side of another cell piece of a cell piece 31, two charge off nails are such as set, pin in each row is spaced, wire is reciprocation extension in a tensioned state between two charge ofves nails, wire is by reciprocation extension under two clip tensionings laying respectively at these rhizoid two ends, thus the conductor wire that formation 15 is parallel, and the secondary grid line of a cell piece 31 is welded with conductor wire, the back electrode of another cell piece 31 is welded with conductor wire, welding temperature is 180 DEG C, and the distance between the adjacent conductive line be parallel to each other is 9.9mm, thus by a row for 10 cell piece series connection, 6 rows this kind of battery strings is connected into array by busbar.By upper glass plates 10, lower glass plate, (water vapor transmittance is 0mg/mm 2* day) coat silica gel separately towards the one side of cell piece 31, stick butyl rubber sealant bar in the surrounding of silica gel.Then, upper glass plates, in the matrix form arrangement are stacked from top to bottom successively with multiple cell piece of welded wire and lower glass plate, wherein, make the sensitive surface of cell piece 31 in the face of front adhesive film 20, front adhesive film 20 directly contacts with conductor wire 32, makes the back side of cell piece 31 in the face of back side adhesive film 40, then puts into laminating machine and carry out lamination, front adhesive film 20 is filled between adjacent conductor wire 32, thus obtained solar module.
Example 2
Example 2 is with the difference of example 1:
Cell piece 31 is arranged with a matrix type, and between adjacent two cell pieces 31, adopt wire drawing mode as shown in figure 14, by the clip tensioning of 15 wires parallel to each other by every one metal wire end, cell piece is flattened, the tension force of clip is 2N, these 15 each root of wire parallel to each other are welded with the secondary grid line in the front of a cell piece 31 separately, and weld with the back electrode at the back side of another cell piece, and the distance between the adjacent conductive line be parallel to each other is 9.9mm.Thus obtained solar module.
Comparative examples 1
Comparative examples 1 is with the difference of example 1: arranged with a matrix type by cell piece, the wire that 15 are cascaded is pasted at transparent adhesive tape rete, wire is pasted on solar battery sheet, between adjacent two cell pieces, then wire connects the back side of the front of a cell piece and another cell piece, by upper glass plates, upper POE adhesive film, transparent adhesive tape rete, arrange in the matrix form and the multiple cell pieces be connected with wire, transparent adhesive tape rete, lower POE adhesive film and lower glass plate stack from top to bottom successively, thus obtained solar module.
Comparative examples 2
Comparative examples 2 is with the difference of example 1: backboard does not adopt glass and adopts PET plate, so obtained solar module.
Example 3
Method according to example 1 prepares solar module, is with the difference of example 1: reciprocation extension is to form 20 parallel conductor wires, and the distance between the adjacent conductive line be parallel to each other is 7mm.So obtained solar module.
Example 4
Method according to example 1 prepares solar module, is with the difference of example 1: alloy-layer is Sn40%-Bi55%-Pb5% (fusing point is 125 DEG C).So obtained solar module.
Example 5
Method according to example 1 prepares solar module, is with the difference of example 1: alloy-layer is 58%Bi-42%Sn.So obtained solar module.
Example 6
Method according to example 1 prepares solar module, is with the difference of example 1: alloy-layer is 65%Sn-20%Bi-10%Pb-5%Zn.So obtained solar module.
Example 7
Method according to example 3 prepares solar module, and the difference of example 3 is: the connected mode of array is: arrange between cell piece adjacent two, conductor wire to extend and the back side of the cell piece 31 of adjacent end portion is formed and is electrically connected in arranging with a+1 from the sensitive surface of cell piece of an end a (a >=1) row, for realizing the connection between adjacent two row's cell pieces, and for the conductor wire that connects adjacent two row's cell pieces 31 with for be connected this two arrange in the conductor wire of adjacent cell sheet 31 be mutually arranged vertically.So obtained solar module.
Example 8
Adopting the method identical with example 1 to prepare solar module, be water vapor transmittance is 0mg/mm unlike backboard 2* the aluminium backboard of day
Example 9
Adopting the method identical with example 1 to prepare solar module, be water vapor transmittance is 0mg/mm unlike backboard 2* the semi-tempered glass that the 2.5mm of day is thick
Example 10
Adopting the method identical with example 1 to prepare solar module, is that to be clamped with water vapor transmittance between double-deck TPT be 0.1mg/mm unlike backboard 2* the backboard of the PIB rubber layer of day.
Example 11
The method identical with example 1 is adopted to prepare solar module, unlike backboard for being that to be clamped with water vapor transmittance between double-deck TPT be 0.01mg/mm 2* the backboard of the PIB rubber layer of day.
Comparative examples 3
Adopting the method identical with example 1 to prepare solar module, be water vapor transmittance is 2270mg/mm unlike backboard 2* the TPT backboard of day.
Comparative examples 4
Adopting the method identical with example 1 to prepare solar module, be water vapor transmittance is 2400mg/mm unlike backboard 2* the PYE backboard of day.
Performance test
Hydrothermal aging (hot and humid): at (85 DEG C/85%RH) high temperature and humidity test case build-in test;
Tested object: the solar module obtained according to above-described embodiment and comparative example, hydrothermal aging (85 DEG C/85%RH) test result is in table 1.
Table 1
Wherein, OK represents: without bad order (as welding wire blackout, delamination etc.), DH1000h power attenuation is less than 2%, DH2000h power attenuation and is less than 5%.
Welding wire turns black, and refers to that the weld strength of welding wire and cell piece reduces, easily causes faulty soldered joint, affect security performance and the electrical property of assembly.
Performance test
PCT (accelerated hydrothermal aging): at (110 DEG C/100%RH/1.5atm) accelerated hydrothermal aging test chamber build-in test;
Tested object: the small sample identical with above-mentioned solar module packaged type.PCT (accelerated hydrothermal aging) (110 DEG C/100%RH/1.5atm) test result is in table 2.
Table 2
Wherein, OK represents: without bad order, and PCT50h power attenuation is less than 2%, PCT100h power attenuation and is less than 5%.
Test case 1
(1) whether drifted about by the wire in naked-eye observation method observation solar module;
(2) disclosed in IEC904-1, method adopts single flash operation simulator to test solar module prepared by above-mentioned example and comparative examples, and test condition is standard test condition (STC): light intensity is 1000W/m 2; Spectrum is AM1.5; Temperature is 25 DEG C, records the photoelectric conversion efficiency of each cell piece.
Result is as shown in table 3 below.
Table 3
Wherein, the ratio of the maximum power (open circuit voltage * short circuit current) when the maximum power point power that fill factor, curve factor represents solar module and zero internal resistance in theory, characterize the close degree of actual power to theoretical maximum power, this value is larger, illustrate that photoelectric conversion efficiency is higher, general series resistance is little, and fill factor, curve factor is just large; Photoelectric conversion efficiency is finger assembly (light intensity 1000W/m under standard illumination condition 2), light energy conversion is the ratio of electric energy by assembly; Series resistance is equivalent to the internal resistance of solar components, and its value is larger, and assembly property is poorer; Fill factor, curve factor, represent the actual maximum power of assembly and the ratio of theoretical maximum power, numerical value is larger, and assembly property is better; Open circuit voltage be assembly under standard illumination condition, voltage during open circuit; During short circuit current, assembly is under standard illumination condition, electric current during short circuit; Operating voltage be assembly under standard illumination condition, output voltage when working with maximum power; Operating current be assembly under standard illumination condition, output current when working with maximum power; Power be finger assembly under standard illumination condition, the maximum power that can reach.
As can be seen from the result of table 3, can not there is the problem of wire drift in the solar module of the embodiment of the present application, and can obtain relatively high photoelectric conversion efficiency, and place some months observation wire does not have variable color simultaneously.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of the instruction such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In describing the invention, the implication of " multiple " is two or more, unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score can comprise the first and second features and directly contact, also can comprise the first and second features and not be directly contact but by the other characterisation contact between them.And, fisrt feature second feature " on ", " top " and " above " comprise fisrt feature directly over second feature and oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " comprise fisrt feature directly over second feature and oblique upper, or only represent that fisrt feature level height is less than second feature.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention when not departing from principle of the present invention and aim, revising, replacing and modification.

Claims (29)

1. a solar module, it is characterized in that, comprise: upper glass plates stacked successively, front adhesive film, solar cell chip arrays, back side adhesive film and backboard, described backboard is steam insulating back panel, and the water vapor transmittance of described steam insulating back panel is less than or equal to 0.1mg/m 2/ day, described solar cell chip arrays comprises multiple cell piece and conductor wire, be connected by described conductor wire between adjacent cell sheet, the front of described cell piece has secondary grid line, described conductor wire is welded with described secondary grid line by weld layer, described weld layer contains alloy, and described alloy contains Sn and Bi.
2. solar module according to claim 1, is characterized in that, described steam insulating back panel is glass or metallic plate.
3. solar module according to claim 1, it is characterized in that, be connected by wire between adjacent cell sheet, between the surface of the cell piece of described wire in adjacent cell sheet and the surface of another cell piece, reciprocation extension is to form multiple described conductor wire.
4. solar module according to claim 1, is characterized in that, described alloy is also containing at least one metal be selected from Cu, In, Ag, Sb, Pb and Zn.
5. solar module according to claim 4, it is characterized in that, in described alloy, with the total weight of this alloy for benchmark, the content of Bi is 15-60 % by weight, the content of the content of Sn to be the content of 30-75 % by weight, Cu be 0-20 % by weight, In is 0-40 % by weight, the content of Ag is 0-3 % by weight, the content of Sb is the content of 0-20 % by weight, Pb is 0-10 % by weight, and the content of Zn is 0-20 % by weight.
6. solar module according to claim 5, is characterized in that, described alloy is selected from least one in 50%Sn-48%Bi-1.5%Ag-0.5%Cu, 58%Bi-42%Sn and 65%Sn-20%Bi-10%Pb-5%Zn.
7. the solar module according to any one of claim 1-6, is characterized in that, described wire is reciprocation extension between the front and the back side of another cell piece described of a described cell piece; The back side of described cell piece is provided with back electrode, and described wire welds with the back electrode of another cell piece described.
8. the solar module according to any one of claim 1-7, is characterized in that, described wire reciprocation extension 10-60 time; Spacing between adjacent conductive line is 2.5-15mm.
9. the solar module according to any one of claim 1-8, is characterized in that, described wire is one.
10. the solar module according to any one of claim 1-9, is characterized in that, described cell piece is arranged into the matrix form of n × m, and wherein n is columns, and m is row, and m-1 >=a >=1,
In same row's cell piece, described wire reciprocation extension is between the surface of a cell piece and the surface of another adjacent cell piece, in adjacent two row's cell pieces, between the surface of a cell piece during the surface of the cell piece of described wire reciprocation extension in a row and a+1 arrange.
11. solar modules according to claim 10, is characterized in that, in same row's cell piece, described wire reciprocation extension between the front of a cell piece and the back side of another adjacent cell piece,
Adjacent two row cell pieces in, described wire reciprocation extension in the front of the cell piece of an end of arrange at a and between the back side of a cell piece of the end that a+1 arranges, with connect adjacent two arrange cell pieces; The wire of reciprocation extension between the adjacent cell sheet of same row is one, and the wire of reciprocation extension between the cell piece of adjacent row is one.
12. solar modules according to any one of claim 1-11, is characterized in that, described wire reciprocation extension in a tensioned state before being connected with described cell piece.
13. solar modules according to any one of claim 1-12, it is characterized in that, described front adhesive film and described back side adhesive film are silica gel.
14. solar modules according to any one of claim 1-13, is characterized in that, the inner side of described steam insulating back panel is coated with the reflecting coating of adularescent.
15. solar modules according to any one of claim 1-14, is characterized in that, clamp the sealant sealing of butyl rubber or Oppanol between the outer of described upper glass plates and the outer of described steam insulating back panel.
16. solar modules according to claim 15, it is characterized in that, described upper glass plates and described steam insulating back panel outer utilize silica gel or butyl rubber or two-sided tape to fix by U-shaped frame, and are filled with fluid sealant between the outer of described upper glass plates and described lower-glass or metallic plate and described U-shaped frame.
17. solar modules according to claim 1, is characterized in that, described front adhesive film directly contacts with described conductor wire and is filled between adjacent conductor wire.
18. solar modules according to claim 1, it is characterized in that, reciprocation extension between the front of the cell piece of described wire in adjacent cell sheet and the back side of another cell piece, described front adhesive film directly contacts with the conductor wire on the front of a described cell piece and is filled between the adjacent conductive line on the front of a described cell piece, and described back side adhesive film directly contacts with the conductor wire at the back side of another cell piece described and is filled between the adjacent conductive line at the back side of another cell piece described.
19. solar modules according to any one of claim 1-18, it is characterized in that, the size of described cell piece is 156mm × 156mm; The series resistance of described solar module is 380-440 milliohm/60 slice.
20. solar modules according to any one of claim 1-19, it is characterized in that, the size of described cell piece is 156mm × 156mm; The open circuit voltage of described solar module is 37.5-38.5V/60 sheet; Short circuit current is 8.9-9.4A.
21. solar modules according to any one of claim 1-20, it is characterized in that, the fill factor, curve factor of described solar module is 0.79-0.82.
22. solar modules according to any one of claim 1-21, it is characterized in that, the size of described cell piece is 156mm × 156mm; The operating voltage of described solar module is 31.5-32V/60 sheet; Operating current is 8.4-8.6A.
23. solar modules according to any one of claim 1-22, it is characterized in that, the size of described cell piece is 156mm × 156mm; The conversion efficiency of described solar module is 16.5-17.4%; Power is 265-280W/60 sheet.
The preparation method of 24. 1 kinds of solar modules, is characterized in that, comprising:
By upper glass plates, front adhesive film, described cell piece array, back side adhesive film and steam insulating back panel stack successively, and make the front of cell piece in the face of front adhesive film, the back side of cell piece is in the face of back side adhesive film, then carry out lamination and obtain described solar module, wherein said solar cell chip arrays comprises multiple cell piece and conductor wire, be connected by described conductor wire between adjacent cell sheet, the front of described cell piece has secondary grid line, described conductor wire is welded with described secondary grid line by weld layer, described weld layer contains alloy, described alloy contains Sn and Bi.
The preparation method of 25. solar modules according to claim 24, it is characterized in that, be connected by wire between adjacent cell sheet, between the surface of the cell piece of described wire in adjacent cell sheet and the surface of another cell piece, reciprocation extension is to form multiple described conductor wire; Described wire is welded with the secondary grid line on the front of a described cell piece and described wire is connected with the backplate on the back side of another cell piece described.
The preparation method of 26. solar modules according to claim 24, is characterized in that, described wire is one.
The preparation method of 27. solar modules according to claim 24, is characterized in that, described wire reciprocation extension in a tensioned state.
The preparation method of 28. solar modules according to claim 24, is characterized in that, described cell piece is arranged into the matrix form of n × m, and wherein n is columns, and m is row,
In same row's cell piece, described wire reciprocation extension is between the surface of a cell piece and the surface of another adjacent cell piece, in adjacent two row's cell pieces, between the surface of a cell piece during the surface of the cell piece of described wire reciprocation extension in a row and a+1 arrange, and m-1 >=a >=1; In adjacent two row's cell pieces, described wire reciprocation extension is on the surface of the cell piece of an end of arranging at a and between the surface of the cell piece of the end that a+1 arranges, and the end that an end of described a row and described a+1 arrange is positioned at the same side of described matrix.
The preparation method of 29. solar modules according to any one of claim 24-28, it is characterized in that, the wire of reciprocation extension between the adjacent cell sheet of same row is one, and the wire of reciprocation extension between the cell piece of adjacent row is one.
CN201510546524.5A 2014-10-31 2015-08-31 Solar cell module and preparation method thereof Active CN105576057B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201510546524.5A CN105576057B (en) 2014-10-31 2015-08-31 Solar cell module and preparation method thereof
JP2017523431A JP2017537469A (en) 2014-10-31 2015-10-30 Solar cell module and manufacturing method thereof
PCT/CN2015/093418 WO2016066135A1 (en) 2014-10-31 2015-10-30 Solar cell module and manufacturing method thereof
US14/928,863 US20160126391A1 (en) 2014-10-31 2015-10-30 Solar cell module and manufacturing method thereof
EP15855152.3A EP3198656A4 (en) 2014-10-31 2015-10-30 Solar cell module and manufacturing method thereof

Applications Claiming Priority (21)

Application Number Priority Date Filing Date Title
CN201410606601 2014-10-31
CN2014106066750 2014-10-31
CN201410608577 2014-10-31
CN2014106066074 2014-10-31
CN201410608580 2014-10-31
CN201410608579X 2014-10-31
CN2014106066017 2014-10-31
CN2014106084693 2014-10-31
CN2014106067005 2014-10-31
CN201410606607 2014-10-31
CN2014106085766 2014-10-31
CN201410606675 2014-10-31
CN201410608469 2014-10-31
CN2014106085770 2014-10-31
CN201410606700 2014-10-31
CN2014106085802 2014-10-31
CN201410608579 2014-10-31
CN201410608576 2014-10-31
CN201510085666 2015-02-17
CN2015100856666 2015-02-17
CN201510546524.5A CN105576057B (en) 2014-10-31 2015-08-31 Solar cell module and preparation method thereof

Publications (2)

Publication Number Publication Date
CN105576057A true CN105576057A (en) 2016-05-11
CN105576057B CN105576057B (en) 2018-06-26

Family

ID=55856636

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510546524.5A Active CN105576057B (en) 2014-10-31 2015-08-31 Solar cell module and preparation method thereof

Country Status (4)

Country Link
EP (1) EP3198656A4 (en)
JP (1) JP2017537469A (en)
CN (1) CN105576057B (en)
WO (1) WO2016066135A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106229356A (en) * 2016-08-31 2016-12-14 连云港神舟新能源有限公司 A kind of many main grids double-side solar cell assembly
CN106299001A (en) * 2016-09-07 2017-01-04 珠海格力电器股份有限公司 A kind of photovoltaic module of anti-PID effect
CN107984140A (en) * 2017-11-14 2018-05-04 宁波市富星电子有限公司 A kind of double-glass solar energy assembly battery strings welder
CN112201720A (en) * 2020-09-30 2021-01-08 浙江晶科能源有限公司 Solar cell module preparation method and solar cell module
CN113471362A (en) * 2021-05-18 2021-10-01 宣城先进光伏技术有限公司 Interconnection process method of perovskite battery
WO2022033322A1 (en) * 2020-08-10 2022-02-17 苏州阿特斯阳光电力科技有限公司 Photovoltaic module

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114883426A (en) * 2022-04-26 2022-08-09 中威新能源(成都)有限公司 Solar cell interconnection method, solar cell and solar cell module
CN114975646A (en) * 2022-05-31 2022-08-30 杭州福斯特应用材料股份有限公司 Conductive adhesive film, manufacturing method thereof and back contact solar cell

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1679174A (en) * 2002-08-29 2005-10-05 达伊4能量有限公司 Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module
US20100193029A1 (en) * 2008-12-15 2010-08-05 Stephen Murphy Solar Module with Encapsulated Edge
CN101919066A (en) * 2007-12-18 2010-12-15 达伊4能量有限公司 Photovoltaic module with edge access to pv strings, interconnection method, apparatus, and system
CN103199137A (en) * 2013-03-13 2013-07-10 袁奇英 Welding strip used in low-temperature welding mode and used for solar photovoltaic module
CN203085560U (en) * 2013-02-07 2013-07-24 凡登(常州)新型金属材料技术有限公司 Isomeric photovoltaic solder strip
CN203205448U (en) * 2013-03-12 2013-09-18 凡登(常州)新型金属材料技术有限公司 Photovoltaic solder strip
CN103794672A (en) * 2013-02-07 2014-05-14 凡登(常州)新型金属材料技术有限公司 Heterogeneous photovoltaic solder strip and manufacturing method thereof
CN203746873U (en) * 2013-12-27 2014-07-30 比亚迪股份有限公司 Photovoltaic cell module
CN203826404U (en) * 2014-04-23 2014-09-10 保定市易通光伏科技有限公司 Solar photovoltaic assembly and solder strip thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146464A (en) * 2002-10-22 2004-05-20 Sharp Corp Solar cell, its manufacturing method, inter-connector therefor, string, and module
JP2004288677A (en) * 2003-03-19 2004-10-14 Sharp Corp Solar battery module subassembly and double glass solar battery module
JP2005191319A (en) * 2003-12-25 2005-07-14 Kyocera Corp Solar cell module
CN201112398Y (en) * 2007-08-28 2008-09-10 比亚迪股份有限公司 Solar energy battery components
US20090283137A1 (en) * 2008-05-15 2009-11-19 Steven Thomas Croft Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions
JP2011009392A (en) * 2009-06-25 2011-01-13 Toyo Aluminium Kk Backside protecting sheet for solar cell module
CN102082192B (en) * 2009-11-27 2014-12-03 比亚迪股份有限公司 Solar battery backing film, preparation method thereof and solar battery
US8356640B1 (en) * 2010-01-14 2013-01-22 Mia Solé Apparatuses and methods for fabricating wire current collectors and interconnects for solar cells
US20120125393A1 (en) * 2010-11-22 2012-05-24 Miasole Photovoltaic Device and Method and System for Making Photovoltaic Device
WO2013024892A1 (en) * 2011-08-17 2013-02-21 富士フイルム株式会社 Solar cell back sheet, method for manufacturing same, and solar cell module
CN103022201A (en) * 2011-09-27 2013-04-03 杜邦公司 Crystal silicon solar battery module and manufacturing method thereof
CN103208547A (en) * 2012-01-13 2013-07-17 比亚迪股份有限公司 Solar cell module
WO2014045909A1 (en) * 2012-09-22 2014-03-27 株式会社ノリタケカンパニーリミテド Solar cell module, and method for producing same
JP2014103220A (en) * 2012-11-19 2014-06-05 Hitachi Chemical Co Ltd Solar battery and solar battery module
JP6050661B2 (en) * 2012-11-21 2016-12-21 長州産業株式会社 Photovoltaic generator manufacturing method
CN203746874U (en) * 2013-12-27 2014-07-30 比亚迪股份有限公司 Solar cell module
CN104064608B (en) * 2014-05-28 2016-08-24 晶澳(扬州)太阳能科技有限公司 A kind of without main grid back contact solar cell assembly and preparation method thereof
CN104037265B (en) * 2014-06-18 2016-06-15 陕西众森电能科技有限公司 A kind of method of HIT solar cell and electrode preparation and series connection

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1679174A (en) * 2002-08-29 2005-10-05 达伊4能量有限公司 Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module
CN101919066A (en) * 2007-12-18 2010-12-15 达伊4能量有限公司 Photovoltaic module with edge access to pv strings, interconnection method, apparatus, and system
US20100193029A1 (en) * 2008-12-15 2010-08-05 Stephen Murphy Solar Module with Encapsulated Edge
CN203085560U (en) * 2013-02-07 2013-07-24 凡登(常州)新型金属材料技术有限公司 Isomeric photovoltaic solder strip
CN103794672A (en) * 2013-02-07 2014-05-14 凡登(常州)新型金属材料技术有限公司 Heterogeneous photovoltaic solder strip and manufacturing method thereof
CN203205448U (en) * 2013-03-12 2013-09-18 凡登(常州)新型金属材料技术有限公司 Photovoltaic solder strip
CN103199137A (en) * 2013-03-13 2013-07-10 袁奇英 Welding strip used in low-temperature welding mode and used for solar photovoltaic module
CN203746873U (en) * 2013-12-27 2014-07-30 比亚迪股份有限公司 Photovoltaic cell module
CN203826404U (en) * 2014-04-23 2014-09-10 保定市易通光伏科技有限公司 Solar photovoltaic assembly and solder strip thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106229356A (en) * 2016-08-31 2016-12-14 连云港神舟新能源有限公司 A kind of many main grids double-side solar cell assembly
CN106299001A (en) * 2016-09-07 2017-01-04 珠海格力电器股份有限公司 A kind of photovoltaic module of anti-PID effect
CN107984140A (en) * 2017-11-14 2018-05-04 宁波市富星电子有限公司 A kind of double-glass solar energy assembly battery strings welder
CN107984140B (en) * 2017-11-14 2019-10-29 宁波市富星电子有限公司 A kind of double-glass solar energy assembly battery strings welder
WO2022033322A1 (en) * 2020-08-10 2022-02-17 苏州阿特斯阳光电力科技有限公司 Photovoltaic module
CN112201720A (en) * 2020-09-30 2021-01-08 浙江晶科能源有限公司 Solar cell module preparation method and solar cell module
CN113471362A (en) * 2021-05-18 2021-10-01 宣城先进光伏技术有限公司 Interconnection process method of perovskite battery

Also Published As

Publication number Publication date
WO2016066135A1 (en) 2016-05-06
JP2017537469A (en) 2017-12-14
EP3198656A1 (en) 2017-08-02
EP3198656A4 (en) 2017-11-22
CN105576057B (en) 2018-06-26

Similar Documents

Publication Publication Date Title
CN105576057A (en) Solar cell module and preparation method thereof
CN106206809A (en) Solar module and preparation method thereof
CN207800614U (en) A kind of stacked tile type solar photovoltaic assembly
CN204946915U (en) Solar module
US20160126391A1 (en) Solar cell module and manufacturing method thereof
US10529868B2 (en) Solar cell array, solar cell module and manufacturing method thereof
CN209087866U (en) Photovoltaic module
CN204834636U (en) Solar wafer array, solar module
EP3198655A1 (en) Solar cell array, solar cell module and manufacturing method thereof
CN103035766A (en) Acid corrosion resistance thin-film solar battery component
CN102544161A (en) Back plate for metal wrap through (MWT) solar battery
CN204905263U (en) Solar wafer array, solar module
CN206379357U (en) A kind of diode, the photovoltaic cell string and photovoltaic module for configuring diode
CN206878009U (en) A kind of electrode of solar battery and solar cell
CN204885175U (en) Solar wafer array, solar module
WO2016065931A1 (en) Solar cell array, solar cell module and manufacturing method thereof
WO2016065946A1 (en) Solar cell array, solar cell module and manufacturing method thereof
WO2016065937A1 (en) Solar cell module and manufacturing method thereof
WO2016065949A1 (en) Solar cell array, solar cell module and manufacturing method thereof
WO2016065948A1 (en) Solar cell unit, conductive wire, array, cell module and manufacturing method thereof
WO2016065941A1 (en) Solar cell unit, conductive wire, array, cell module and manufacturing method thereof
WO2016065933A1 (en) Solar cell, solar cell module and manufacturing method thereof
CN117525194A (en) Solar cell interconnection structure and interconnection method
WO2016065953A1 (en) Solar cell module and manufacturing method thereof
WO2016065944A1 (en) Solar cell module and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant