CN109768090A - A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with embedded heterojunction diode self-shield - Google Patents
A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with embedded heterojunction diode self-shield Download PDFInfo
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- CN109768090A CN109768090A CN201910126536.0A CN201910126536A CN109768090A CN 109768090 A CN109768090 A CN 109768090A CN 201910126536 A CN201910126536 A CN 201910126536A CN 109768090 A CN109768090 A CN 109768090A
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Abstract
The invention discloses a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with embedded heterojunction diode self-shield; on the one hand heterojunction schottky diode structure is used on the basis of conventional groove profile field oxide device; i.e. polysilicon is directly contacted with silicon carbide; while reducing device manufacturing cost; the resistance in the region JFET is reduced to reduce the conduction loss of device; the uncontrollable integrity problem of Schottky barrier due to caused by schottky metal annealing temperature difference is eliminated, to reach the technique manufacture difficulty for reducing the silicon carbide groove profile field oxide device with diode structure.On the other hand, the problem of electric field strength of grid oxic horizon is effectively reduced using p-type protective layer in trench structure bottom, increases the reliability of device, alleviates between MOS device breakdown voltage and conducting resistance.
Description
Technical field
The invention belongs to field of semiconductor, and in particular to a kind of with embedded heterojunction diode self-shield
Silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device.
Background technique
Due to highdensity cellular, ultralow conducting resistance and outstanding switching characteristic, silicon carbide (SiC) groove MOSFET
It is widely used in power-supply system, excellent electrical characteristic is verified in many electric system application.So
And a critical issue of silicon carbide groove MOSFET is the gate oxide reliability for increasing channel bottom, but does not increase knot
The resistance in the region type field effect transistor (JFET).The silicon carbide groove MOSFET of improvement has p-type protective layer structure and current-carrying
Sub- diffusion layer (CSL), principle are respectively under trench oxide layer and channel using highly doped p+ layers and n-layer, and current power
Weigh one of gate oxide reliability and the solution of resistance in the region JFET.
As shown in Figure 1,1 is N-type substrate layer, 2 drift about typical silicon carbide groove profile field oxygen power MOS device construction for N-type
Area, 3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N-type source region, and 6 be grid oxide layer, and 7 be grid polycrystalline silicon, and 8 protect for P+
Sheath, 10 be source metal, and 11 be drain metal.The more traditional groove profile device of the structure can greatly reduce the electric field of grid oxic horizon
Intensity, and grid capacitance is reduced, increase devices switch speed.In general, when silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device is in electricity
When working in the system of source, silicon carbide schottky barrier diode (SiC SBD) answer it is connected in parallel, to prevent by silicon carbide groove profile field
There is P-type channel area, drift region and substrate form a parasitic body diode movement and cause body inside oxygen power MOS device construction
Diode deterioration, causes entire device reliability to reduce.A SiC schottky diode in parallel cause additional chip at
This, electric system loss and undesirable stray inductance.These factors are the design band of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device
Challenge newly is carried out.
On this basis, a kind of silicon carbide groove profile field oxide structure with built-in Schottky diode is suggested, and sees Fig. 2, and 1
It is N-type drift region for N-type substrate layer, 2,3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N-type source region, and 6 be grid oxygen
Layer, 7 be grid polycrystalline silicon, and 9 be P protective layer, and 10 be source metal, and 11 be drain metal, and 12 be schottky metal knot.Compare figure
1, the maximum improvement of the silicon carbide groove profile field oxide structure with built-in Schottky diode is to use integrated groove profile Schottky
Diode structure, therefore transistor size can be maximally reduced, it also lays the foundation for the miniaturization of system, related content
It can be seen that bibliography: Kobayashi, Yusuke, et al. " Body PiN diode inactivation with low on-
resistance achieved by a 1.2kV-class 4H-SiC SWITCH-MOS."2017 IEEE
International of Electron Devices Meeting(IEDM).IEEE,2017。
Therefore in order to further decrease the technique manufacture difficulty of the silicon carbide groove profile field oxide device with diode structure, delay
The problem of solving between device electric breakdown strength and conducting resistance has the silicon carbide groove profile field oxygen device of similar Schottky diode structure
The further research of part becomes worldwide research hotspot.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of silicon carbide tanks with embedded heterojunction diode self-shield
Type field oxygen power MOS (Metal Oxide Semiconductor) device.
For achieving the above object, the invention provides the following technical scheme:
1, a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with embedded heterojunction diode self-shield, the MOS device
Part successively includes drain metal 11, N-type substrate layer 1, N-type drift region 2, N-type carrier diffusion region 3, P-type channel layer from the bottom up
4, source metal 10, the MOS device are additionally provided with P protective layer 9, N-type source region 5, source polysilicon 8 and groove profile gate electrode,
The groove profile gate electrode uses splitting grid structure, and the P protective layer 9 is set to below groove profile gate electrode and side, the slot
Type gate electrode and the source polysilicon 8 share the P protective layer 9, the 9 semi-surrounding groove profile gate electrode of P protective layer and leakage
Pole polysilicon 8.
Preferably, the groove profile gate electrode includes grid oxide layer 6 and grid polycrystalline silicon 7, and the grid oxide layer 6 surrounds gate polycrystalline
Silicon 7.
Preferably, the grid polycrystalline silicon 7 is N-type or p-type polysilicon.
Preferably, the 8 semi-surrounding grid oxide layer 6 of source polysilicon or it is placed in the lower section of grid oxide layer 6.
Preferably, the part source electrode includes source polysilicon 8.
Preferably, the source polysilicon 8 is p-type polysilicon.
Preferably, the source polysilicon 8 is set to the lower part of the source metal 10.
Preferably, the groove profile gate electrode and the lower part of the source metal 10, the side of N-type source region 5, P-type channel layer 4
Side contact.
Preferably, the side of the N-type source region 5 is contacted with the side of the groove profile gate electrode, the bottom of the N-type source region 5
Portion is contacted with another side with the P-type channel layer 4, and the top of the N-type source region 5 and the lower part of the source metal 10 connect
Touching.
Preferably, the material of the P protective layer 9 is semiconductor material with wide forbidden band.
Preferably, the semiconductor material with wide forbidden band is GaN.
The beneficial effects of the present invention are:
1, a kind of silicon carbide groove profile field oxygen power MOS devices with embedded heterojunction diode self-shield disclosed by the invention
Groove profile gate electrode uses splitting grid structure in part, i.e. gate electrode is filled only with part trench structure, and another part formation one is different
Matter junction Schottky diode structure, i.e. source polysilicon are directly contacted with silicon carbide.This structure is on the one hand in the device system of reduction
It causes this while that can eliminate the uncontrollable reliability of Schottky barrier due to caused by schottky metal annealing temperature difference to ask
Topic；On the other hand, existing silicon carbide and silicon carbide are compared with the Built-in potential region that silicon carbide contact is formed due to polysilicon
It is small to contact the Built-in potential region formed, therefore silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device JFET resistance can be effectively reduced；
2, a kind of silicon carbide groove profile field oxygen power MOS devices with embedded heterojunction diode self-shield disclosed by the invention
Part uses p-type protective layer below groove profile grid, channel bottom can be effectively reduced on the basis of conventional groove profile field oxide device
Grid oxic horizon and heterojunction schottky diode structure electric field strength, to effectively increase device reliability.
Detailed description of the invention
In order to keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention provides following attached drawing:
Fig. 1 is conventional silicon carbide groove profile field oxide device structural schematic diagram；
Fig. 2 is the silicon carbide groove profile field oxide device structural schematic diagram with Schottky diode；
Fig. 3 is a kind of silicon carbide groove profile field oxygen power MOS devices with embedded heterojunction diode self-shield of the invention
Part structural schematic diagram；
Fig. 4 is the silicon carbide groove profile field oxygen power MOS that another kind of the invention has embedded heterojunction diode self-shield
Device architecture schematic diagram；
Wherein, 1 is N-type substrate layer, and 2 be N-type drift region, and 3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N-type
Source region, 6 be grid oxide layer, and 7 be grid polycrystalline silicon, and 8 be source polysilicon, and 9 be P protective layer, and 10 be source metal, and 11 be drain electrode gold
Belong to.
Specific embodiment
Below by a preferred embodiment of the present invention will be described in detail.The experiment of actual conditions is not specified in embodiment
Method, usually according to conventional conditions or according to the manufacturer's recommendations.
A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with embedded heterojunction diode self-shield, 1 is N-type substrate
Layer, 2 be N-type drift region, and 3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N-type source region, and 6 be grid oxide layer, and 7 be grid
Polysilicon, 8 be source polysilicon, and 9 be P protective layer, and 10 be source metal, and 11 be drain metal, and structure is as shown in Figures 3 and 4,
Wherein 8 semi-surrounding grid oxide layer of source polysilicon in Fig. 3, and source polysilicon 8 is placed in the lower section of grid oxide layer in Fig. 4.
A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with embedded heterojunction diode self-shield, the MOS device
Including from the bottom up successively including drain metal 11, N-type substrate layer 1, N-type drift region 2, N-type carrier diffusion region 3, P-type channel
Layer 4, source metal 10, are arranged P protective layer 9, N-type source region 5, groove profile gate electrode, the 9 semi-surrounding source polysilicon 8 of P protective layer
And grid.
Above-mentioned groove profile gate electrode includes grid oxide layer 6 and grid polycrystalline silicon 7 in the present invention, wherein the grid polycrystalline silicon 7 is N
Type or p-type polysilicon.
Above-mentioned polysilicon 8 is p-type polysilicon in the present invention.
Also have following positional relationship in MOS device structure of the invention: the groove profile source electrode is set to the source electrode
The lower part of metal 10；The groove profile gate electrode and the lower part of the source metal 10, the side of N-type source region 5, P-type channel layer 4
Side contact；The side of the N-type source region 5 is contacted with the side of the groove profile gate electrode, the bottom and the other side of N-type source region 5
Face is contacted with the P-type channel layer 4, the lower contacts on the top of the N-type source region 5 and the source metal 10.
In addition the material of the P protective layer 9 is semiconductor material with wide forbidden band, and the semiconductor material with wide forbidden band is GaN.
A kind of silicon carbide groove profile field oxygen power MOS devices with embedded heterojunction diode self-shield disclosed by the invention
Part is arranged p-type protective layer using groove profile gate electrode, entire grid can be effectively reduced on the basis of conventional groove profile field oxide device
The electric field strength of oxide layer increases the reliability of device；In addition one kind disclosed by the invention has embedded heterojunction diode certainly
Trench structure uses splitting grid structure in the silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device of protection, i.e. gate electrode only takes up part
Trench structure；With heterojunction schottky diode structure, i.e. polysilicon is directly contacted with silicon carbide.Reducing device JFET resistance
Meanwhile eliminating the uncontrollable integrity problem of Schottky barrier due to caused by schottky metal annealing temperature difference.
Finally, it is stated that preferred embodiment above is only used to illustrate the technical scheme of the present invention and not to limit it, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (10)
1. a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with embedded heterojunction diode self-shield, the MOS device from
Under up successively include drain metal (11), N-type substrate layer (1), N-type drift region (2), N-type carrier diffusion region (3), p-type ditch
Channel layer (4), source metal (10), which is characterized in that the MOS device is additionally provided with P protective layer (9), N-type source region (5), source electrode
Polysilicon (8), the groove profile gate electrode use splitting grid structure, P protective layer (9) the semi-surrounding groove profile gate electrode and source
Pole polysilicon (8).
2. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 1
MOS device, which is characterized in that the groove profile gate electrode includes grid oxide layer (6) and grid polycrystalline silicon (7), grid oxide layer (6) packet
Enclose grid polycrystalline silicon (7).
3. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 2
MOS device is it is characterized in that, the grid polycrystalline silicon (7) is N-type or p-type polysilicon.
4. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 1
MOS device, which is characterized in that source polysilicon (8) the semi-surrounding grid oxide layer (6) is placed in below grid oxide layer (6).
5. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 4
MOS device, which is characterized in that the source polysilicon (8) is p-type polysilicon.
6. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 1
MOS device, which is characterized in that the source polysilicon (8) is set to the lower part of the source metal (10).
7. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 1
MOS device, which is characterized in that the groove profile gate electrode and the lower part of the source metal (10), the side of N-type source region (5), P
The side of type channel layer (4) contacts.
8. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 1
MOS device, which is characterized in that the side of the N-type source region (5) is contacted with the side of the groove profile gate electrode, the N-type source region
(5) bottom is contacted with another side with the P-type channel layer (4), the top of the N-type source region (5) and the source metal
(10) lower contacts.
9. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 1
MOS device, which is characterized in that the material of the P protective layer (9) is semiconductor material with wide forbidden band.
10. a kind of silicon carbide groove profile field oxygen power with embedded heterojunction diode self-shield according to claim 9
MOS device, which is characterized in that the semiconductor material with wide forbidden band is GaN.
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| CN111029398A (en) * | 2019-11-24 | 2020-04-17 | 中电国基南方集团有限公司 | Groove type MOSFET power device and preparation method thereof |
| CN111403486A (en) * | 2020-03-30 | 2020-07-10 | 中国科学院微电子研究所 | Groove type MOSFET structure and manufacturing method thereof |
| CN117080269A (en) * | 2023-10-13 | 2023-11-17 | 深圳基本半导体有限公司 | Silicon carbide MOSFET device and preparation method thereof |
| CN117393585A (en) * | 2023-12-07 | 2024-01-12 | 深圳市冠禹半导体有限公司 | MOSFET device with high driving capability and driving circuit thereof |
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Application publication date: 20190517 |