CN109545840A - A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode - Google Patents
A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode Download PDFInfo
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- 239000011241 protective layer Substances 0.000 title claims abstract description 42
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 39
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 27
- 239000001301 oxygen Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 229920005591 polysilicon Polymers 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 28
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 108091006146 Channels Proteins 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000000137 annealing Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 3
- 230000001413 cellular effect Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Abstract
The invention discloses a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode; on the one hand on the basis of conventional groove profile field oxide device; p-type protective layer is shared using groove profile gate electrode and groove profile source electrode; cellular width can be effectively reduced, so that conducting resistance of the device in ON state be effectively reduced；On the other hand heterojunction schottky diode structure is used, i.e. polysilicon is directly contacted with silicon carbide, while reducing device manufacturing cost, eliminate the uncontrollable integrity problem of Schottky barrier due to caused by schottky metal annealing temperature difference, the purpose of the problem of to reach the technique manufacture difficulty for reducing the silicon carbide groove profile field oxide device with diode structure, alleviate between MOS device breakdown voltage and conducting resistance.
Description
Technical field
The invention belongs to field of semiconductor, and in particular to a kind of carbon with protective layer and heterojunction diode
SiClx groove profile field oxygen power MOS (Metal Oxide Semiconductor) device.
Background technique
Silicon carbide power device is because of its high voltage, low on-resistance, the electrical characteristics such as rapidly switches off, is widely used to
In power-supply system.Although its excellent electrical characteristic is verified in many electric system application, high chip
Cost and integrity problem still limit the status that they replace Si IGBT.And the integrity problem of grid oxic horizon is people
One of long-term focus of attention problem, and thus propose numerous alleviation contradictory schemes, wherein below the oxide structure of groove profile field
Placing p-type protective layer is considered as that one of the contradictory structure can be effectively relieved.
As shown in Figure 1,1 is N-type substrate layer, 2 drift about typical silicon carbide groove profile field oxygen power MOS device construction for N-type
Area, 3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N-type source region, and 6 be grid oxide layer, and 7 be grid polycrystalline silicon, and 9 protect for P
Sheath, 10 be source metal, and 11 be drain metal.The more traditional groove profile device of the structure can greatly reduce the electric field of grid oxic horizon
Intensity, and grid capacitance is reduced, increase devices switch speed.Tool inside the oxygen power MOS device construction of silicon carbide groove profile field
There is P-type channel area, drift region and substrate form a parasitic body diode.When inverter circuit uses, secondary post can be made full use of
Raw body diode conduction achievees the purpose that system compact to omit external fast recovery diode.However, as silicon carbide
Base device, compared with silicon-based devices, the Built-in potential of silicon carbide diode is higher, and in the case where conducting heavy current, body
Diode can deteriorate, and entire device reliability is caused to reduce.Therefore, in inverter circuit, usually one silicon carbide Xiao of inverse parallel
Special based diode.Then, the parasitic inductance that everything increases the usable floor area of chip again and the system integration generates.In carbon
In the case where SiClx high-speed switch, the parasitic inductance of very little can also bring unnecessary concussion to device.
On this basis, a kind of silicon carbide groove profile field oxide structure with built-in Schottky diode is suggested, and sees Fig. 2, and 1
It is N-type drift region for N type substrate layer, 2,3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N-type source region, and 6 be grid oxygen
Layer, 7 be grid polycrystalline silicon, and 9 be P protective layer, and 10 be source metal, and 11 be drain metal, and 12 be schottky metal knot.Compare figure
1, the maximum improvement of the silicon carbide groove profile field oxide structure with built-in Schottky diode is to use integrated groove profile Schottky
Diode structure, therefore transistor size can be maximally reduced, it also lays the foundation for the miniaturization of system, related content
It can be seen that bibliography: Kobayashi, Yusuke, et al. " Body PiN diode inactivation with low on-
resistance achieved by a 1.2kV-class 4H-SiC SWITCH-MOS."2017IEEE
International of Electron Devices Meeting(IEDM).IEEE,2017。
Therefore in order to further decrease the technique manufacture difficulty of the silicon carbide groove profile field oxide device with diode structure, delay
The problem of solving between device electric breakdown strength and conducting resistance has the further of the silicon carbide groove profile field oxide device of diode structure
Research becomes worldwide research hotspot.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of silicon carbide groove profile with protective layer and heterojunction diode
Field oxygen power MOS (Metal Oxide Semiconductor) device.
For achieving the above object, the invention provides the following technical scheme:
1, a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode, the MOS device
From the bottom up successively include drain metal 11, N-type substrate layer 1, N-type drift region 2, N-type carrier diffusion region 3, P-type channel layer 4,
Source metal 10, setting P protective layer 9, N-type source region 5, groove profile gate electrode and groove profile source electrode, the P protective layer 9 are set to
Below groove profile gate electrode and groove profile source electrode, the groove profile gate electrode and the groove profile source electrode share the P protective layer 9, institute
Groove profile source electrode is stated using heterojunction diode structure.
Preferably, the groove profile gate electrode includes grid oxide layer 6 and grid polycrystalline silicon 7.
Further, the grid polycrystalline silicon 7 is N-type or p-type polysilicon.
Preferably, the groove profile source electrode includes source polysilicon 8.
Further, the source polysilicon 8 is p-type polysilicon, and the material of the p-type polysilicon is nickel, titanium, gold or silver
One of metal or various metals mixture.
Preferably, the groove profile source electrode is set to the lower part of the source metal 10.
Preferably, the groove profile gate electrode and the lower part of the source metal 10, the side of N-type source region 5, P-type channel layer 4
Side contact.
Preferably, the side of the N-type source region 5 is contacted with the side of the groove profile gate electrode, and N-type source region 5 supports bottom
It is contacted with another side with the P-type channel layer 4, the lower contacts on the top of the N-type source region 5 and the source metal 10.
Preferably, the material of the P protective layer 9 is semiconductor material with wide forbidden band.
Further, the semiconductor material with wide forbidden band is GaN.
The beneficial effects of the present invention are:
1, a kind of silicon carbide groove profile field oxygen power MOS devices with protective layer and heterojunction diode disclosed by the invention
Part shares p-type protective layer using groove profile gate electrode and groove profile source electrode on the basis of conventional groove profile field oxide device, can be effective
Cellular width is reduced, so that conducting resistance of the device in ON state be effectively reduced；
2, a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode disclosed by the invention
Middle groove profile source electrode uses heterojunction schottky diode structure, i.e. polysilicon is directly contacted with silicon carbide, in the device system of reduction
It causes this while, eliminates the uncontrollable integrity problem of Schottky barrier due to caused by schottky metal annealing temperature difference.
Detailed description of the invention
In order to keep the purpose of the present invention, technical scheme and beneficial effects clearer, the present invention provides following attached drawing:
Fig. 1 is conventional silicon carbide groove profile field oxide device structural schematic diagram；
Fig. 2 is the silicon carbide groove profile field oxide device structural schematic diagram with Schottky diode；
Fig. 3 is a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode of the invention
Structural schematic diagram；
In figure, 1 is N-type substrate layer, and 2 be N-type drift region, and 3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N
Type source region, 6 be grid oxide layer, and 7 be grid polycrystalline silicon, and 8 be source polysilicon, and 9 be P protective layer, and 10 be source metal, and 11 be leakage
Pole metal, 12 be schottky metal knot.
Specific embodiment
Below by a preferred embodiment of the present invention will be described in detail.The experiment of actual conditions is not specified in embodiment
Method, usually according to conventional conditions or according to the manufacturer's recommendations.
A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode, structure such as Fig. 3 institute
Show, 1 is N-type substrate layer, and 2 be N-type drift region, and 3 be N-type carrier diffusion region, and 4 be P-type channel layer, and 5 be N-type source region, and 6 are
Grid oxide layer, 7 be grid polycrystalline silicon, and 8 be source polysilicon, and 9 be P protective layer, and 10 be source metal, and 11 be drain metal.
A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode, the MOS device packet
Include successively includes drain metal 11, N-type substrate layer 1, N-type drift region 2, N-type carrier diffusion region 3, P-type channel layer from the bottom up
4, source metal 10, setting P protective layer 9, N-type source region 5, groove profile gate electrode and groove profile source electrode, the P protective layer 9 are arranged
Below groove profile gate electrode and groove profile source electrode, the groove profile gate electrode and the groove profile source electrode share the P protective layer 9,
The groove profile source electrode uses heterojunction diode structure.
Above-mentioned groove profile gate electrode includes grid oxide layer 6 and grid polycrystalline silicon 7 in the present invention, wherein the grid polycrystalline silicon 7 is N
Type or p-type polysilicon.
Above-mentioned groove profile source electrode includes partially or without side wall field oxygen layer and source polysilicon 8, wherein the source in the present invention
Pole polysilicon 8 is p-type polysilicon, and the material of the p-type polysilicon is one of nickel, titanium, gold or silver metal or a variety of gold
Belong to mixture.
Also have following positional relationship in MOS device structure of the invention: the groove profile source electrode is set to the source electrode
The lower part of metal 10；The groove profile gate electrode and the lower part of the source metal 10, the side of N-type source region 5, P-type channel layer 4
Side contact；The side of the N-type source region 5 is contacted with the side of the groove profile gate electrode, and N-type source region 5 supports bottom and another
One side is contacted with the P-type channel layer 4, the lower contacts on the top of the N-type source region 5 and the source metal 10.
In addition the material of the P protective layer 9 is semiconductor material with wide forbidden band, and the semiconductor material with wide forbidden band is GaN.
A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode disclosed by the invention,
On the basis of conventional groove profile field oxide device, p-type protective layer is shared using groove profile gate electrode and groove profile source electrode, can be effectively reduced
Cellular width, so that conducting resistance of the device in ON state be effectively reduced；In addition disclosed by the invention a kind of with protective layer
Heterojunction schottky diode knot is used with groove profile source electrode in the silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device of heterojunction diode
Structure, i.e. polysilicon are directly contacted with silicon carbide, while reducing device manufacturing cost, are eliminated due to schottky metal annealing temperature
The uncontrollable integrity problem of Schottky barrier caused by degree difference.
Finally, it is stated that preferred embodiment above is only used to illustrate the technical scheme of the present invention and not to limit it, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (10)
1. a kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode, the MOS device is under
It up successively include drain metal (11), N-type substrate layer (1), N-type drift region (2), N-type carrier diffusion region (3), P-type channel
Layer (4), source metal (10), which is characterized in that setting P protective layer (9), N-type source region (5), groove profile gate electrode and groove profile source
Electrode, the P protective layer (9) are set to below groove profile gate electrode and groove profile source electrode, the groove profile gate electrode and the groove profile
Source electrode shares the P protective layer (9), and the groove profile source electrode uses heterojunction diode structure.
2. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 1
Device, which is characterized in that the groove profile gate electrode includes grid oxide layer (6) and grid polycrystalline silicon (7).
3. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 2
Device, which is characterized in that the grid polycrystalline silicon (7) is N-type or p-type polysilicon.
4. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 1
Device, which is characterized in that the groove profile source electrode includes source polysilicon (8).
5. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 4
Device, which is characterized in that the source polysilicon (8) is p-type polysilicon, and the material of the p-type polysilicon is nickel, titanium, Jin Huo
One of person's silver metal or various metals mixture.
6. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 1
Device, which is characterized in that the groove profile source electrode is set to the lower part of the source metal (10).
7. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 1
Device, which is characterized in that the groove profile gate electrode and the lower part of the source metal (10), the side of N-type source region (5), p-type ditch
The side of channel layer (4) contacts.
8. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 1
Device, which is characterized in that the side of the N-type source region (5) is contacted with the side of the groove profile gate electrode, and N-type source region (5) are supported
Bottom is contacted with another side with the P-type channel layer (4), top and the source metal (10) of the N-type source region (5)
Lower contacts.
9. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 1
Device, which is characterized in that the material of the P protective layer (9) is semiconductor material with wide forbidden band.
10. a kind of silicon carbide groove profile field oxygen power MOS with protective layer and heterojunction diode according to claim 9
Device, which is characterized in that the semiconductor material with wide forbidden band is GaN.
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| CN201811354615.9A CN109545840A (en) | 2018-11-14 | 2018-11-14 | A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode |
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| CN201811354615.9A CN109545840A (en) | 2018-11-14 | 2018-11-14 | A kind of silicon carbide groove profile field oxygen power MOS (Metal Oxide Semiconductor) device with protective layer and heterojunction diode |
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| CN110828555A (en) * | 2019-11-18 | 2020-02-21 | 重庆大学 | Asymmetric heterojunction silicon carbide groove type field oxygen power MOS device |
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| CN110828555A (en) * | 2019-11-18 | 2020-02-21 | 重庆大学 | Asymmetric heterojunction silicon carbide groove type field oxygen power MOS device |
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Application publication date: 20190329 |