CN109742508B - High-gain self-duplex back cavity antenna and wireless communication equipment - Google Patents
High-gain self-duplex back cavity antenna and wireless communication equipment Download PDFInfo
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- CN109742508B CN109742508B CN201910042486.8A CN201910042486A CN109742508B CN 109742508 B CN109742508 B CN 109742508B CN 201910042486 A CN201910042486 A CN 201910042486A CN 109742508 B CN109742508 B CN 109742508B
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- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000010586 diagram Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a high-gain self-duplex back cavity antenna and wireless communication equipment, wherein the antenna comprises a substrate integrated waveguide, the substrate integrated waveguide comprises a dielectric substrate, four metallized through hole columns and two independent metallized through holes, the four metallized through hole columns surround the periphery of the dielectric substrate, a first rectangular patch is arranged at the top of the dielectric substrate, and a second rectangular patch is arranged at the bottom of the dielectric substrate; the first diagonal both ends of first rectangle paster are equipped with first port and second port respectively, and the sculpture has two U-shaped gaps that the size is different on the first rectangle paster, and the great U-shaped gap of size is located between Y axle and the first port, and the less U-shaped gap of size is located between Y axle and the second port, two independent metallized through-holes are located between the less U-shaped gap of size and the second port to about X axisymmetry. The invention has the characteristics of simple structure, compact structure and high gain, and is easy to integrate with radio frequency modules of various wireless communication devices.
Description
Technical Field
The invention relates to an antenna, in particular to a high-gain self-duplex back cavity antenna and wireless communication equipment, and belongs to the technical field of antennas.
Background
With the rapid development of wireless communication systems, the demand for compact, lightweight, and high-performance dual-or multi-frequency antennas has also increased. Modern handheld wireless devices often operate under multiple communication standards, and therefore, the receiver requires a high-order diplexer to separate signals in different frequency bands. In addition, satellite transceiver systems have different uplink/downlink frequencies, with filters separating the signals transmitted from the signals received by the antenna. The self-duplex antenna has good isolation between ports of two working frequency bands, and a high-order duplexer is not needed to be additionally used, so that a system network of the radio frequency front end is miniaturized and simplified, the complexity of the system is reduced, the efficiency is improved, and the cost is reduced. Due to these prominent features, recent studies of self-duplex antennas are receiving increasing attention from researchers.
Disclosure of Invention
The invention aims to provide a high-gain self-duplex back cavity antenna which has the characteristics of simple structure, compact structure and high gain and is easy to integrate with radio frequency modules of various wireless communication devices.
It is another object of the present invention to provide a wireless communication device.
The aim of the invention can be achieved by adopting the following technical scheme:
the high-gain self-duplex back cavity antenna comprises a substrate integrated waveguide, wherein the substrate integrated waveguide comprises a dielectric substrate, four metallized through hole columns and two independent metallized through holes, the four metallized through hole columns surround the periphery of the dielectric substrate, a first rectangular patch is arranged at the top of the dielectric substrate, and a second rectangular patch is arranged at the bottom of the dielectric substrate;
the two ends of a first diagonal of the first rectangular patch are respectively provided with a first port and a second port, two U-shaped gaps with different sizes are etched on the first rectangular patch, the U-shaped gap with larger size is positioned between the Y axis and the first port, the U-shaped gap with smaller size is positioned between the Y axis and the second port, and the two independent metalized through holes are positioned between the U-shaped gap with smaller size and the second port and are symmetrical about the X axis; the coordinate system where the X axis and the Y axis are located is formed by clockwise rotation of 45 degrees of the coordinate system established by the central lines of the two adjacent sides of the first rectangular patch.
Further, the two U-shaped gaps each comprise a first rectangular section, a second rectangular section and a third rectangular section, the second rectangular section rotates anticlockwise by a certain angle around two vertexes of the first side of the first rectangular section and is connected with the first side of the first rectangular section, and the third rectangular section rotates clockwise by a certain angle around two vertexes of the second side of the first rectangular section and is connected with the second side of the second rectangular section.
Further, in the U-shaped gap with larger size, the anticlockwise rotation angle of the second rectangular section around the first side of the first rectangular section and the clockwise rotation angle of the third rectangular section around the second side of the first rectangular section are 45-50 degrees;
in the smaller U-shaped gap, the angle of counterclockwise rotation of the second rectangular section around the first side of the first rectangular section and the angle of clockwise rotation of the third rectangular section around the second side of the first rectangular section are both 55-60 degrees.
Further, in any one of the U-shaped slits, the length of the first rectangular section is larger than that of the second rectangular section and that of the third rectangular section, and the lengths of the second rectangular section and the third rectangular section are the same.
Further, in the U-shaped gap with larger size, the length of the first rectangular section is 4.5 mm-5.5 mm, and the lengths of the second rectangular section and the third rectangular section are 3 mm-4 mm;
in the U-shaped gap with smaller size, the length of the first rectangular section is 2.5 mm-3 mm, and the lengths of the second rectangular section and the third rectangular section are 1.5 mm-2 mm.
Further, in the two U-shaped gaps, the distance between the U-shaped gap with a larger size and the Y axis is 3 mm-4 mm, and the distance between the U-shaped gap with a smaller size and the Y axis is 7 mm-9 mm.
Further, two adjacent metallized via columns of the four metallized via columns are adjacent to the first port, and two other adjacent metallized via columns of the four metallized via columns are adjacent to the second port.
Further, four sides of the first rectangular patch are flush with four sides of the medium substrate in a one-to-one correspondence manner.
Further, in two opposite metallized through hole columns of the four metallized through hole columns, the distance between the centers of two adjacent metallized through holes is 1.55 mm-1.6 mm;
in the other two opposite metallized through hole columns of the four metallized through hole columns, the distance between the centers of two adjacent metallized through holes is 1.4 mm-1.5 mm.
Further, the diameter of the metallized through holes in the four metallized through hole columns is 0.6 mm-1 mm.
Further, the distance between the circle centers of the two independent metallized through holes and the X axis is 3 mm-5 mm, and the distance between the circle centers of the two independent metallized through holes and the Y axis is 12 mm-13 mm.
Further, the first port and the second port each comprise a microstrip line with a length of 7 mm-8 mm and a width of 5.5 mm-6.5 mm.
Further, the dielectric substrate was a Rogers RT 5880 having a thickness of 1.57mm, a dielectric constant of 2.2, and a loss tangent of 0.0009.
The other object of the invention can be achieved by adopting the following technical scheme:
a wireless communication device comprising the high gain self-duplex back cavity antenna described above.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the antenna, the TE120 mode and the TE220 mode are excited in the same cavity respectively, two frequency points which do not interfere with each other when the two ports are fed respectively are generated, and simulation results show that the gains of the low frequency point and the high frequency point respectively reach 6.1dBi and 5dBi.
2. The antenna can change low-frequency and high-frequency frequencies respectively by changing the width of the U-shaped gap with a larger size and the position of the independent metallized through hole between the U-shaped gap with a smaller size and the second port, so that the independent adjustment of the frequency is realized, and the isolation degree can still be kept above 20 dB.
Drawings
Fig. 1 is a block diagram of a high gain self-duplex back cavity antenna according to an embodiment of the invention.
Fig. 2 is an E-plane radiation field pattern at 7.52GHz for a high gain self-duplex back cavity antenna according to an embodiment of the invention.
Fig. 3 is an H-plane radiation field pattern at 7.52GHz for a high gain self-duplex back cavity antenna according to an embodiment of the invention.
Fig. 4 is a diagram of the E-plane radiation field at 9.84GHz for a high gain self-duplex back cavity antenna according to an embodiment of the invention.
Fig. 5 is an H-plane radiation field pattern at 9.84GHz for a high gain self-duplex back cavity antenna according to an embodiment of the invention.
Fig. 6 is an S-parameter diagram of a high gain self-duplex back cavity antenna according to an embodiment of the invention.
Fig. 7 is a diagram showing a variation of S parameter when the D4 value is changed by the high-gain self-duplex back cavity antenna according to the embodiment of the present invention.
Fig. 8 is a diagram of a variation of S parameter when the Ws1 value is changed by the high-gain self-duplex back cavity antenna according to the embodiment of the present invention.
Fig. 9 is a graph of gain variation in respective impedance bandwidths when the first Port1 and the second Port2 of the high-gain self-duplex back cavity antenna according to the embodiment of the invention are fed respectively.
The device comprises a 1-dielectric substrate, a 2-first metallized through hole array, a 3-second metallized through hole array, a 4-third metallized through hole array, a 5-fourth metallized through hole array, a 6-first independent metallized through hole, a 7-second independent metallized through hole, an 8-first rectangular patch, a 9-first port, a 10-second port, an 11-first U-shaped gap, a 12-second U-shaped gap and a 13-straight line.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Examples:
as shown in fig. 1, this embodiment provides a high-gain self-duplex back cavity antenna, which includes a substrate integrated waveguide, the substrate integrated waveguide includes a dielectric substrate 1, four metallized via columns and two independent metallized via holes, the four metallized via hole columns surround the periphery of the dielectric substrate 1 to form a circle of metallized via holes, the four metallized via hole columns are respectively a first metallized via hole column 2, a second metallized via hole column 3, a third metallized via hole column 4 and a fourth metallized via hole column 5, wherein the first metallized via hole column 2 is adjacent to the second metallized via hole column 3, the third metallized via hole column 4 is adjacent to the fourth metallized via hole column 5, the first metallized via hole column 2 is opposite to the fourth metallized via hole column 5, the second metallized via hole column 3 is opposite to the third metallized via hole column 4, the two independent metallized via holes are respectively a first independent metallized via hole 6 and a second independent metallized via hole 7, a first rectangular patch 8 is disposed on the top of the dielectric substrate 1, and a second rectangular patch (not shown) is disposed on the bottom of the dielectric substrate 1.
The dielectric substrate 1 has a rectangular shape, a thickness of 1.57mm, a dielectric constant of 2.2, and a loss tangent of 0.0009.
The four sides of the first rectangular patch 8 are flush with the four sides of the medium substrate 1 in a one-to-one correspondence manner, namely, the length and the width of the first rectangular patch 8 are flush with the length and the width of the medium substrate 1, the length L of the first rectangular patch 8 is 28.4mm, and the width w is 26.7mm; since the first rectangular patch 8 is rectangular in shape and has a first diagonal line and a second diagonal line, the central lines of two adjacent sides of the first rectangular patch 8 intersect at a point O, a coordinate system A0 is established on the basis, the coordinate system A0 is rotated 45 degrees clockwise to obtain the coordinate system a, the origin of the coordinate system a is O, the directions of the X axis and the Y axis of the coordinate system a are as shown in fig. 1, the first rectangular patch 8 is etched with a first U-shaped slit 11 and a second U-shaped slit 12, the sizes of the first U-shaped slit 11 and the second U-shaped slit 12 are different, the size of the first U-shaped slit 11 is larger than the size of the second U-shaped slit 12, the first U-shaped slit 11 is located between the Y axis and the first port 9, the second U-shaped slit 12 is located between the Y axis and the second port 10, the opening of the first U-shaped slit 11 faces the first port 9, i.e., the X axis negative direction, and the opening of the second U-shaped slit 12 faces the second port 10, i.e., the X axis positive direction.
Further, the first U-shaped slit 11 and the second U-shaped slit 12 each include a first rectangular section, a second rectangular section, and a third rectangular section; in the two U-shaped gaps, the widths of the first rectangular section, the second rectangular section and the third rectangular section are the same; in any U-shaped gap, the length of the first rectangular section is larger than that of the second rectangular section and the third rectangular section, and the lengths of the second rectangular section and the third rectangular section are the same.
In the first U-shaped slit 11, the widths Ws1 of the first rectangular section, the second rectangular section and the third rectangular section are 1.2mm, the first rectangular section is located in the middle, the length L1 of the first rectangular section is 5mm, the second rectangular section is located on the left side, the second rectangular section rotates 50 degrees anticlockwise around two vertexes on the left side (first side) of the first rectangular section and is connected with the left side of the first rectangular section, the third rectangular section is located on the right side, rotates 50 degrees clockwise around two vertexes on the right side (second side) of the first rectangular section and is connected with the right side of the first rectangular section, so that a U-shaped slit is obtained, and it can be seen that the included angles A1 of the second rectangular section, the third rectangular section and the first rectangular section are 50 degrees, and the lengths L2 of the second rectangular section and the third rectangular section are 3.2mm; furthermore, the first U-shaped slit 11 is symmetrical about the X-axis, and the distance D2 between the first U-shaped slit 11 and the Y-axis is 3.5mm.
In the second U-shaped slit 12, the widths Ws2 of the first rectangular section, the second rectangular section and the third rectangular section are 1.2mm, the first rectangular section is located in the middle, the length L1 of the first rectangular section is 2.6mm, the second rectangular section is located on the right, the second rectangular section rotates counterclockwise by 60 ° around two vertexes on the right (first side) of the first rectangular section and is connected with the right side of the first rectangular section, the third rectangular section is located on the left, rotates counterclockwise by 50 ° around two vertexes on the left (second side) of the first rectangular section and is connected with the left side of the first rectangular section, so that a U-shaped slit is obtained, and it can be seen that the included angle A2 between the second rectangular section, the third rectangular section and the first rectangular section is 60 °, and the length L2 of the second rectangular section and the third rectangular section is 1.8mm; further, the second U-shaped slit 12 is symmetrical about a straight line 13, the straight line 13 being parallel to the X-axis, and a distance D1 between it and the X-axis being 1.05mm, and a distance D3 between the second U-shaped slit 12 and the Y-axis being 8mm.
The first port 9 and the second port 10 each comprise a microstrip line, the microstrip line is a 50Ω microstrip line, the microstrip line of the first port 9 is symmetrical about the X-axis, the microstrip line of the second port 10 is symmetrical about the straight line 13, the gap width C1 between the microstrip line of the first port 9 and the microstrip line of the second port 10 and the first rectangular patch 8 is 0.8mm, the distance B1 between the microstrip line and the Y-axis is 14mm, the microstrip line length Lm is 7.5mm, and the width Wm is 6mm.
The first metallized through hole row 2, the second metallized through hole row 3, the third metallized through hole row 4 and the fourth metallized through hole row 5 are respectively parallel to four sides of the medium substrate 1, the diameter D of each metallized through hole of the first metallized through hole row 2, the second metallized through hole row 3, the third metallized through hole row 4 and the fourth metallized through hole row 5 is 0.8mm, the number of metallized through holes of the first metallized through hole row 2 and the second metallized through hole row 3 is 14 near the first port 9, two metallized through holes close to the first port 9 are symmetrical about the X axis, the distance E2 between the circle center and the X axis is 4.45mm, the distance B1-E1 between the circle center and the Y axis is 0.45mm, the number of metallized through holes of the third metallized through hole row 4 and the fourth metallized through hole row 5 near the second port 9 is 14, the number of metallized through holes of the fourth metallized through hole row 4 is 13, and the number of metallized through holes of the fourth metallized through hole row 5 is 14; in the first metallized via row 2 and the fourth metallized via row 5, the distance S1 between the centers of two adjacent metallized vias is 1.57mm, and in the second metallized via row 3 and the third metallized via row 4, the distance S2 between the centers of two adjacent metallized vias is 1.45mm.
The first independent metalized through hole 6 and the second independent metalized through hole 7 are located between the second U-shaped gap and the second port 10, and the first independent metalized through hole 6 and the second independent metalized through hole 7 are arranged near the second port 10 and symmetrical with respect to the X axis, the distance G2 between the center of the circle and the X axis is 4mm, and the distance D4 between the center of the circle and the Y axis is 12.8mm.
In the above embodiment, the first rectangular patch, the second rectangular patch, the first port and the second port are all made of metal materials, and the metal materials may be any one of aluminum, iron, tin, copper, silver, gold and platinum, or may be an alloy of any one of aluminum, iron, tin, copper, silver, gold and platinum.
FIGS. 2 and 3 are graphs of E-plane and H-plane radiation fields at 7.52GHz for the high-gain self-duplex back cavity antenna of the present embodiment, respectively; fig. 4 and 5 are respectively the E-plane and H-plane radiation field patterns of the high gain self-duplex back cavity antenna of this embodiment resonating at 9.84 GHz.
Fig. 6 is an S-parameter diagram of the high-gain self-duplex back cavity antenna of the present embodiment, and it can be seen from the diagram that the center resonance frequencies of the two pass bands are 7.52GHz and 9.84GHz, the impedance bandwidths of 10dB are 1.79% and 1.02%, respectively, and the isolation between the two ports is greater than 21dB.
Fig. 7 shows the S parameter change condition of the high-gain self-duplex back cavity antenna according to the embodiment when the D4 value is changed, the high frequency point is changed along with the change of D4 when the D4 value is changed, and the low frequency point is hardly changed; fig. 8 shows the S parameter change condition of the high-gain self-duplex back cavity antenna according to the present embodiment when the Ws1 value is changed, the low frequency point is changed along with the change of Ws1 when Ws1 is changed, and the high frequency point is hardly changed.
Fig. 9 shows the gain variation in the impedance bandwidth of the low frequency when the first Port1 is fed and the gain variation in the impedance bandwidth of the low frequency when the second Port2 is fed in the high-gain self-duplex back cavity antenna according to the present embodiment.
In summary, the antenna of the invention has the characteristics of simple structure, compact structure and high gain, and is easy to integrate with radio frequency modules of various wireless communication devices (such as mobile phones, tablet computers and the like).
The above-mentioned embodiments are only preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can make equivalent substitutions or modifications according to the technical solution and the inventive concept of the present invention within the scope of the present invention disclosed in the present invention patent, and all those skilled in the art belong to the protection scope of the present invention.
Claims (7)
1. The high-gain self-duplex back cavity antenna is characterized in that: the integrated waveguide comprises a substrate integrated waveguide, wherein the substrate integrated waveguide comprises a dielectric substrate, four metallized through hole columns and two independent metallized through holes, the four metallized through hole columns surround the periphery of the dielectric substrate, a first rectangular patch is arranged at the top of the dielectric substrate, and a second rectangular patch is arranged at the bottom of the dielectric substrate;
the two ends of a first diagonal of the first rectangular patch are respectively provided with a first port and a second port, two U-shaped gaps with different sizes are etched on the first rectangular patch, the U-shaped gap with larger size is positioned between the Y axis and the first port, the U-shaped gap with smaller size is positioned between the Y axis and the second port, and the two independent metalized through holes are positioned between the U-shaped gap with smaller size and the second port and are symmetrical about the X axis; the coordinate system where the X axis and the Y axis are located is formed by clockwise rotation of 45 degrees of the coordinate system established by the central lines of two adjacent sides of the first rectangular patch;
among the two U-shaped gaps, the distance between the U-shaped gap with the larger size and the Y axis is 3 mm-4 mm, and the distance between the U-shaped gap with the smaller size and the Y axis is 7 mm-9 mm;
two adjacent metallized through hole columns of the four metallized through hole columns are close to the first port, and the other two adjacent metallized through hole columns of the four metallized through hole columns are close to the second port;
the distance between the circle centers of the two independent metallized through holes and the X axis is 3 mm-5 mm, and the distance between the circle centers of the two independent metallized through holes and the Y axis is 12 mm-13 mm.
2. The high gain self-duplex back cavity antenna according to claim 1, wherein: the two U-shaped gaps comprise a first rectangular section, a second rectangular section and a third rectangular section, the second rectangular section rotates anticlockwise by a certain angle around two vertexes of the first side of the first rectangular section and is connected with the first side of the first rectangular section, and the third rectangular section rotates clockwise by a certain angle around two vertexes of the second side of the first rectangular section and is connected with the second side of the second rectangular section.
3. The high gain self-duplex back cavity antenna according to claim 2, wherein: in any U-shaped gap, the length of the first rectangular section is larger than that of the second rectangular section and the third rectangular section, and the lengths of the second rectangular section and the third rectangular section are the same.
4. The high gain self-duplex back cavity antenna according to claim 1, wherein: four sides of the first rectangular patch are flush with four sides of the medium substrate in a one-to-one correspondence manner.
5. The high gain self-duplex back cavity antenna according to any of claims 1-4, wherein: in two opposite metallized through hole columns of the four metallized through hole columns, the distance between the circle centers of two adjacent metallized through holes is 1.55 mm-1.6 mm;
in the other two opposite metallized through hole columns of the four metallized through hole columns, the distance between the centers of two adjacent metallized through holes is 1.4 mm-1.5 mm.
6. The high gain self-duplex back cavity antenna according to any of claims 1-4, wherein: the first port and the second port both comprise microstrip lines with the length of 7 mm-8 mm and the width of 5.5 mm-6.5 mm.
7. A wireless communication device, characterized in that: comprising a high gain self-duplex back cavity antenna according to any of claims 1-6.
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| CN110518350A (en) * | 2019-09-10 | 2019-11-29 | 北京理工大学 | A kind of circularly-polarized patch antenna of high-gain miniaturization |
| CN113922075B (en) * | 2021-10-13 | 2023-09-19 | 西华大学 | Slow wave substrate integrated waveguide duplex antenna based on high-order mode |
| CN114243276B (en) * | 2021-10-27 | 2022-10-28 | 北京邮电大学 | Novel self-duplex multi-band terahertz antenna |
| CN114927864B (en) * | 2022-05-07 | 2023-06-20 | 中国电子科技集团公司第十三研究所 | Self-duplex antenna |
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| CN101183743A (en) * | 2007-11-12 | 2008-05-21 | 杭州电子科技大学 | Single feedback low profile back cavity dual-frequency bilinear polarization antenna |
| CN106356620A (en) * | 2016-10-31 | 2017-01-25 | 东南大学 | Broadband polarization reconfigurable antenna |
| CN108767437A (en) * | 2018-04-24 | 2018-11-06 | 华南理工大学 | A kind of differential bipolar antenna based on substrate integration wave-guide |
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| RU2649871C2 (en) * | 2016-06-24 | 2018-04-05 | Общество с ограниченной ответственностью "Радио Гигабит" | Device of wireless communication with frequency-polarization distribution between transfer and receiver channels |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101183743A (en) * | 2007-11-12 | 2008-05-21 | 杭州电子科技大学 | Single feedback low profile back cavity dual-frequency bilinear polarization antenna |
| CN106356620A (en) * | 2016-10-31 | 2017-01-25 | 东南大学 | Broadband polarization reconfigurable antenna |
| CN108767437A (en) * | 2018-04-24 | 2018-11-06 | 华南理工大学 | A kind of differential bipolar antenna based on substrate integration wave-guide |
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