CN108767437A - A kind of differential bipolar antenna based on substrate integration wave-guide - Google Patents
A kind of differential bipolar antenna based on substrate integration wave-guide Download PDFInfo
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- CN108767437A CN108767437A CN201810372483.6A CN201810372483A CN108767437A CN 108767437 A CN108767437 A CN 108767437A CN 201810372483 A CN201810372483 A CN 201810372483A CN 108767437 A CN108767437 A CN 108767437A
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 230000010354 integration Effects 0.000 title claims abstract description 14
- 230000005855 radiation Effects 0.000 claims abstract description 31
- 238000001465 metallisation Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 230000010287 polarization Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims 1
- 238000002955 isolation Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/106—Microstrip slot antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
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Abstract
The invention discloses a kind of differential bipolar antenna based on substrate integration wave-guide, including medium substrate, mutually orthogonal the first microstrip line and the second microstrip line is arranged in the medium substrate upper surface, intersection point is located at the central point of medium substrate, the medium substrate lower surface setting gap radiation structure and substrate integrated wave-guide cavity wave structure, the substrate integrated wave-guide cavity wave structure is connected with gap radiation structure, middle part and the gap radiation structure short circuit of second microstrip line.The present invention has good radiation characteristic.
Description
Technical field
The present invention relates to wireless communication fields, and in particular to a kind of differential bipolar antenna based on substrate integration wave-guide.
Background technology
The radio systems such as radio broadcasting, communication, telemetering, remote control and navigation are all to transmit letter using radio wave
Number, and the transmitting of radio wave and reception are all completed by antenna.Therefore antenna equipment be in radio system can not or
Scarce important component.Satellite and the communication technology develop very fast in recent years, and satellite broadcasting is also come China is universal, ku
Band satellite digital broadcasting just has small compared to wave band c, facilitates receptions, the advantages that small is interfered on ground.It needs sometimes in the communications
Transmit big information content, the low-frequency range of microwave current oneself through very crowded, ku wave bands and ka wave bands these high frequencies can only be turned to
Section transmits large information capacity, and the antenna of research ku wave bands has actual application value.
Substrate integrated waveguide technology be propose in recent years a kind of can be integrated in dielectric substrate have filter with low insertion loss and
The novel waveguide structure of the characteristics such as Low emissivity, it is by low loss dielectric substrate (such as LTCC that upper bottom surface is metal layer
Dielectric substrate) on, it opens periodical plated-through hole array and realizes.Substrate integrated wave guide structure inherits traditional waveguide device
The good characteristics such as high quality factor and high power capacity, while active and passive integration can be effectively realized again, using SIW realities
Entire microwave and millimeter wave system, can be produced on an encapsulating structure by the passive device of the existing high q-factor such as filter and duplexer
It is interior, make microwave and millimeter wave system compact, and substrate integrated wave guide structure can accurately be realized using PCB or LTCC techniques,
Compared with the microwave device of conventional waveguide form, processing cost is very cheap, thus microwave&millimeter-wave IC design and
Have broad application prospects in production.
Differential antennae changes the single port feed design of traditional antenna, straight to two feed ports using duplex feeding port
Connect input differential signal.Differential antennae has following advantage compared with traditional antenna：1) switching devices such as balun need not be used radio frequency
The differential signal of front end output is converted to single port signal, can effectively reduce loss of the signal in input port, improves day
The efficiency of line.2) differential antennae can directly connect with the differential signal of radio-frequency front-end system output, and radio-frequency front-end is made to possess higher
Integrated level.3) dual polarized antenna uses differential feed, can obtain higher difference interport isolation.
Invention content
In order to overcome shortcoming and deficiency of the existing technology, the present invention to provide a kind of difference based on substrate integration wave-guide
Dual polarized antenna.
The present invention is by using single-layer medium plate, two microstrip feed lines, " ten " word chiasma type gap structure and substrate collection
Be combined at wave-guide cavity wave structure, propose it is a kind of it is simple in structure, interport isolation is high, convenient for make realize substrate integrate wave
The differential bipolar antenna led.
The present invention adopts the following technical scheme that：
A kind of differential bipolar antenna based on substrate integration wave-guide, including medium substrate, the medium substrate upper surface
Mutually orthogonal the first microstrip line and the second microstrip line be set, and intersection point is located at the central point of medium substrate, under the medium substrate
Gap radiation structure and substrate integrated wave-guide cavity wave structure, the substrate integrated wave-guide cavity wave structure and gap radiation is arranged in surface
Structure is connected, middle part and the gap radiation structure short circuit of second microstrip line.
The gap radiation structure be " ten " word chiasma type gap, two gaps using medium substrate central point as crosspoint,
+ 45 ° and -45 ° of directions in crosspoint are located at, gap radiation structure is about medium substrate central point and with medium substrate center
Point is symmetrical for the X-axis and Y-axis of origin.
The length and width all same in two gaps, slit width are 0.01 λ0-0.3λ0, a length of 0.5 λ in gap0-2
λ0；Wherein λ0For the corresponding free space wavelength in center of antenna resonant frequency place.
The crosspoint of the gap radiation structure is covered with four rectangle metal structures, four rectangle metal knots
A length of 0.1 λ of structure0-0.5λ0, width is 0.01 λ0-0.4λ0, to cross section+45 ° and -45 ° of directions into line width be 0.01 λ0-
0.2λ0Corner cut, wherein λ0For the corresponding free space wavelength in center of antenna resonant frequency place.
Setting metallization VIA and square gap in the substrate integrated wave-guide cavity wave structure, square gap is located at base
The bottom of piece integral waveguide cavity structure.
The middle part setting of second microstrip line and the first metallization VIA and second of radiating slot structure short circuit metallized
Hole.
First microstrip line and the second microstrip line are located at using medium substrate central point as the X-axis of origin and Y axis
On.
Further include external SMA heads, the external SMA heads have two groups, and one group of its internal and external conductor connects the first micro-strip respectively
Line and gap radiation structure feed gap, form vertical polarization electromagnetic wave；
Seam gap irradiation structure and the second microstrip line feed gap to another group of internal and external conductor respectively, form horizontal pole
Change electromagnetic wave.
The structure size of first microstrip line and the second microstrip line is identical, is connected by the different microstrip line of three sections of long width
It constitutes.
The gap radiation structure is fed by differential signal, is fed directly into that amplitude is equal and the difference of phase difference 180 degree
Signal.
Beneficial effects of the present invention：
The impedance relative bandwidth of the differential bipolar antenna of the substrate integration wave-guide of the present invention is more than 21%, interport isolation
More than 58dB, antenna pattern keeps stablizing, simple in structure, is easily worked, has good application prospect in wireless communication field.
Description of the drawings
Fig. 1 is the dimensional structure diagram of the present invention；
Fig. 2 is the vertical view of Fig. 1；
Fig. 3 is the side view of Fig. 1；
Fig. 4 is the vertical view of the gap radiation structure in Fig. 1；
Fig. 5 is the vertical view of the first microstrip line and the second microstrip line in Fig. 1；
Fig. 6 is the substrate integrated wave-guide cavity wave structure in Fig. 1；
Fig. 7 is impedance and the isolation frequency characteristic figure of the differential bipolar antenna of the substrate integration wave-guide of the present invention；
Fig. 8 is XOZ plane of the differential bipolar antenna of the substrate integration wave-guide of the present invention at frequency 14.5GHz
Antenna pattern；
Fig. 9 is YOZ plane of the differential bipolar antenna of the substrate integration wave-guide of the present invention at frequency 14.5GHz
Antenna pattern.
Specific implementation mode
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are not
It is limited to this.
Embodiment
As shown in figs 1 to 6, a kind of differential bipolar antenna based on substrate integration wave-guide, including medium substrate 1, it is described
Mutually orthogonal the first microstrip line 3a and the second microstrip line 3b is arranged in medium substrate upper surface, and intersection point is located at the center of medium substrate
Point, the first microstrip line are located at using medium substrate central point as in the X-axis of origin, the second microstrip line is located in Y-axis, the medium base
Plate lower surface setting gap radiation structure 2 and substrate integrated wave-guide cavity wave structure 5, gap radiation structure are located at medium substrate and base
The centre of piece integral waveguide cavity structure, and connect with substrate integrated wave-guide cavity wave structure, the interposition of second microstrip line
Install the first metallization VIA 4a and the second metallization VIA 4b and gap radiation structure short circuit, the first metallization VIA and the
The diameter range of two metallization VIAs is 0.005 λ0-0.2λ0。
The gap radiation structure 2 is " ten " word chiasma type gap, is made of two gaps, is with medium substrate central point
Crosspoint is located at+45 ° and -45 ° of directions in crosspoint, constitutes " ten " word chiasma type gap structure, intersect four of gap
End is in+45 ° and -45 °, and gap radiation structure is about medium substrate central point and using medium substrate central point as the X-axis of origin
And Y-axis is symmetrical.
The structure in two gaps and equal sized, slit width w1 ranging from 0.01 λ0-0.3λ0, the long w2 in gap ranging from 0.5
λ0-2λ0.Wherein λ0For the corresponding free space wavelength in center of antenna resonant frequency place.
Wherein λ0For the corresponding free space wavelength in center of antenna resonant frequency place.
Gap crosspoint carries out part covering with four rectangle metal structures, and four rectangle structures are about medium substrate
Center point symmetry, gap radiation structure are class petal design, and the width of rectangle metal structure is w3, a length of w4, to cross section
In+45 ° and -45 ° of directions into the corner cut that line width is w5, wherein the wide w3 of rectangle metal structure ranging from 0.01 λ0-0.4λ0,
Long w4 ranging from 0.1 λ0-0.5λ0, the wide w5 of corner cut ranging from 0.01 λ0-0.2λ0, angle is 45 degree.
Setting metallization VIA 6 and square gap 7 in the substrate integrated wave-guide cavity wave structure, square gap is located at
The bottom of substrate integrated wave-guide cavity wave structure, length of side W6 ranging from 0.15 λ0-0.25λ0。
The a height of d1*d1*h1 of medium substrate length and width, the substrate integrated wave-guide cavity wave structure 5 are located under medium substrate 1
Side and closely medium substrate 1, size d2*d2*h2.Metallization VIA 6 in substrate integrated wave-guide cavity wave structure 5, metallized
The diameter range in hole 6 is 0.005 λ0-0.2λ0, the opposite dielectric of the medium substrate 1 and substrate integrated wave-guide cavity wave structure 5 is normal
The thickness range of number ranging from 1-10, medium substrate 1 and substrate integrated wave-guide cavity wave structure 5 is 0.03 λ0-0.6λ0。
The first microstrip line 3a and the second microstrip line 3b is micro- by growing respectively s1, s2, s3 and wide respectively g1, g2, g3
Band line forms；The first microstrip line 3a is located in X-axis, and the second microstrip line 3b is located on Y axis, first microstrip line
Each parameter area of 3a and the second microstrip line 3b are ranging from：Ranging from 0.1 λ of s10-0.6λ0, ranging from 0.1 λ of s20-
0.6λ0, ranging from 0.1 λ of s30-0.3λ0, ranging from 0.02 λ of g10-0.2λ0, ranging from 0.02 λ of g20-0.2λ0, g3's
Ranging from 0.005 λ0-0.2λ0。
Impedance matching circuit between the first microstrip line 3a compositions and antenna, the second microstrip line 3b and the first gold medal
Categoryization via 4a and the second metallization VIA 4b collectively constitute the impedance matching circuit between antenna.
Further include external SMA heads, the external SMA heads have two groups, and one group of its internal and external conductor connects the first micro-strip respectively
Line and gap radiation structure feed the gap of gap irradiation structure, form vertical polarization electromagnetic wave；
Seam gap irradiation structure and the second microstrip line feed gap to another group of internal and external conductor respectively, form horizontal pole
Change electromagnetic wave.
The gap radiation structure is fed by differential signal, is fed directly into that amplitude is equal and the difference of phase difference 180 degree
Signal.
Specific size is as follows in the present embodiment：
Compares figure 7, Fig. 7 give when medium substrate 1, substrate integrated wave-guide cavity wave structure 5 are normal according to opposite dielectric respectively
Number is 2.2,3.55, thickness 0.508mm, 4mm；W1 is 0.224 λ in gap radiation structure 20, w2 λ0, w3 be 0.04 λ0、
W4 is 0.0925 λ0, w5 be 0.0165 λ0, w6 be 0.22 λ0, s1 be 0.55 λ0, s2 be 0.55 λ0, s3 be 0.23 λ0, g1 0.07
λ0, g2 be 0.07 λ0, g3 be 0.015 λ0When, pass through the reflectance factor and isolation frequency of the antenna that HFSS simulation softwares calculate
Rate characteristic.
Visible according to the result of Fig. 7, substrate integration wave-guide differential bipolar antenna is 13GHz-16GHz in working band
When return loss reach -10dB, opposite working band width is more than 21%, and isolation is more than 58dB, has the work of high-isolation
Characteristic.
Fig. 8,9 give when medium substrate area is 1.335 λ0*1.335λ0, substrate integrated wave-guide cavity wave area be 1.02
λ0*1.02λ0When, the antenna obtained using HFSS Software simulation calculations when working frequency is 14.5GHz, antenna in the faces XOZ and
The faces YOZ gain pattern.From Fig. 8,9, antenna has good radiation characteristic.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by changes, modifications, substitutions, combinations, simplifications,
Equivalent substitute mode is should be, is included within the scope of the present invention.
Claims (10)
1. a kind of differential bipolar antenna based on substrate integration wave-guide, which is characterized in that including medium substrate, the medium base
Mutually orthogonal the first microstrip line and the second microstrip line is arranged in plate upper surface, and intersection point is located at the central point of medium substrate, is given an account of
Matter base lower surface is arranged gap radiation structure and substrate integrated wave-guide cavity wave structure, the substrate integrated wave-guide cavity wave structure with
Gap radiation structure is connected, middle part and the gap radiation structure short circuit of second microstrip line.
2. differential bipolar antenna according to claim 1, which is characterized in that the gap radiation structure is handed over for " ten " word
Forked type gap, two gaps are located at+45 ° and -45 ° of directions in crosspoint, gap using medium substrate central point as crosspoint
Irradiation structure is symmetrical as the X-axis of origin and Y-axis about medium substrate central point and using medium substrate central point.
3. differential bipolar antenna according to claim 2, which is characterized in that the length and width in two gaps are equal
Identical, slit width is 0.01 λ0-0.3λ0, a length of 0.5 λ in gap0-2λ0；Wherein λ0To be corresponded at the center of antenna resonant frequency
Free space wavelength.
4. differential bipolar antenna according to claim 2, which is characterized in that use in the crosspoint of the gap radiation structure
Four rectangle metal structures are covered, a length of 0.1 λ of four rectangle metal structures0-0.5λ0, width is 0.01 λ0-0.4
λ0, to cross section+45 ° and -45 ° of directions into line width be 0.01 λ0-0.2λ0Corner cut, wherein λ0For the center of antenna resonance
The corresponding free space wavelength in frequency place.
5. differential bipolar antenna according to claim 1, which is characterized in that in the substrate integrated wave-guide cavity wave structure
Metallization VIA and square gap are set, and square gap is located at the bottom of substrate integrated wave-guide cavity wave structure.
6. differential bipolar antenna according to claim 1, which is characterized in that the middle part setting and radiation of the second microstrip line
The first metallization VIA and the second metallization VIA of gap structure short circuit.
7. differential bipolar antenna according to claim 1, which is characterized in that first microstrip line and the second microstrip line
It is located at using medium substrate central point as in the X-axis of origin and Y-axis.
8. differential bipolar antenna according to claim 1, which is characterized in that further include external SMA heads, it is described external
SMA heads have two groups, one group of its internal and external conductor connects the first microstrip line and gap radiation structure to be fed to gap respectively, shape
At vertical polarization electromagnetic wave；
Seam gap irradiation structure and the second microstrip line feed gap to another group of internal and external conductor respectively, form horizontal polarization electricity
Magnetic wave.
9. differential bipolar antenna according to claim 1, which is characterized in that first microstrip line and the second microstrip line
Structure size it is identical, connected and composed by three sections of different microstrip lines of long width.
10. differential bipolar antenna according to claim 1, which is characterized in that the gap radiation structure is believed by difference
Number feed, is fed directly into that amplitude is equal and the differential signal of phase difference 180 degree.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109659680A (en) * | 2018-12-11 | 2019-04-19 | 华南理工大学 | A kind of dual-band dual-polarized antenna based on substrate integration wave-guide |
| CN109742508A (en) * | 2019-01-17 | 2019-05-10 | 华南理工大学 | The certainly duplexing cavity-backed radiator antenna of high-gain and wireless telecom equipment |
| CN110112549A (en) * | 2019-05-29 | 2019-08-09 | 华南理工大学 | A kind of three frequency dual polarized antenna of differential feed |
| CN110444864A (en) * | 2019-08-02 | 2019-11-12 | 华南理工大学 | A kind of super-wide band high-gain millimeter wave differential feed encapsulating antenna |
| CN110890628A (en) * | 2019-10-28 | 2020-03-17 | 南京航空航天大学 | Differential end-fire antenna based on SIW structure |
| WO2020187146A1 (en) * | 2019-03-20 | 2020-09-24 | Oppo广东移动通信有限公司 | Millimeter wave module and electronic device |
| CN114006172A (en) * | 2021-10-19 | 2022-02-01 | 南京航空航天大学 | Dual-polarized single pulse antenna based on substrate integrated waveguide and strip line feed |
| CN114927864A (en) * | 2022-05-07 | 2022-08-19 | 中国电子科技集团公司第十三研究所 | Self-duplex antenna |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109659680A (en) * | 2018-12-11 | 2019-04-19 | 华南理工大学 | A kind of dual-band dual-polarized antenna based on substrate integration wave-guide |
| CN109659680B (en) * | 2018-12-11 | 2023-11-24 | 华南理工大学 | Dual-frequency dual-polarized antenna based on substrate integrated waveguide |
| CN109742508B (en) * | 2019-01-17 | 2023-11-17 | 华南理工大学 | High-gain self-duplex back cavity antenna and wireless communication equipment |
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| CN110112549A (en) * | 2019-05-29 | 2019-08-09 | 华南理工大学 | A kind of three frequency dual polarized antenna of differential feed |
| CN110112549B (en) * | 2019-05-29 | 2024-01-09 | 华南理工大学 | Differential feed three-frequency dual-polarized antenna |
| CN110444864B (en) * | 2019-08-02 | 2020-03-17 | 华南理工大学 | Ultra-wideband high-gain millimeter wave differential feed packaged antenna |
| CN110444864A (en) * | 2019-08-02 | 2019-11-12 | 华南理工大学 | A kind of super-wide band high-gain millimeter wave differential feed encapsulating antenna |
| CN110890628A (en) * | 2019-10-28 | 2020-03-17 | 南京航空航天大学 | Differential end-fire antenna based on SIW structure |
| CN114006172A (en) * | 2021-10-19 | 2022-02-01 | 南京航空航天大学 | Dual-polarized single pulse antenna based on substrate integrated waveguide and strip line feed |
| CN114927864B (en) * | 2022-05-07 | 2023-06-20 | 中国电子科技集团公司第十三研究所 | Self-duplex antenna |
| CN114927864A (en) * | 2022-05-07 | 2022-08-19 | 中国电子科技集团公司第十三研究所 | Self-duplex antenna |
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Application publication date: 20181106 |