CN111326860A - Low cross polarization dual-frequency cavity-backed antenna and wireless communication equipment - Google Patents
Low cross polarization dual-frequency cavity-backed antenna and wireless communication equipment Download PDFInfo
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- CN111326860A CN111326860A CN202010238881.6A CN202010238881A CN111326860A CN 111326860 A CN111326860 A CN 111326860A CN 202010238881 A CN202010238881 A CN 202010238881A CN 111326860 A CN111326860 A CN 111326860A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/526—Electromagnetic shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/06—Waveguide mouths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/50—Feeding or matching arrangements for broad-band or multi-band operation
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Abstract
The invention discloses a low cross polarization dual-frequency cavity-backed antenna and wireless communication equipment, wherein the antenna comprises a dielectric substrate, an upper metal layer, a lower metal layer and a metallized through hole array, wherein the upper metal layer is arranged on the upper surface of the dielectric substrate, the lower metal layer is arranged on the lower surface of the dielectric substrate, the metallized through hole array penetrates through the upper metal layer, the dielectric substrate and the lower metal layer, and the metallized through hole array, the upper metal layer and the lower metal layer jointly enclose a half-mold substrate integrated waveguide cavity; the dielectric substrate and the lower metal layer extend towards one side relative to the upper metal layer, an opening is formed in the extending part of the half-die substrate integrated waveguide cavity, and a gap is formed in one side, close to the opening, of the upper metal layer. The antenna of the invention reduces the volume of the dual-frequency antenna by utilizing a half-mode technology, has the good characteristic of low cross polarization, can well reduce the interference between systems during communication, has the characteristics of low profile and small volume, and is easy to integrate with a communication system with small volume.
Description
Technical Field
The invention relates to a dual-frequency antenna, in particular to a low cross polarization dual-frequency cavity-backed antenna and wireless communication equipment, which can work in an X wave band and belong to the field of wireless communication.
Background
With the rapid development of wireless communication systems, in the currently widely used wireless communication systems, signals are generally required to be transmitted in two frequency bands with a relatively large interval, and if two pairs of antennas are used to implement dual-band operation, the system occupation will increase, so the demand for compact, lightweight, and high-performance dual-band or multi-band antennas also increases. The substrate integrated waveguide is a planar waveguide structure, has the advantages of high power capacity, low insertion loss, low radiation loss and the like, and the derived structure, namely the half-mode substrate integrated waveguide and the like, keeps the original electric field distribution while reducing the area, and is widely applied to the miniaturization design of microwave devices such as power dividers, filters, antennas and the like. The half-mode dual-frequency antenna combines the requirements of modern communication on the dual-frequency antenna, and has the advantage of easy integration with a miniaturized system.
Disclosure of Invention
In view of the above, the present invention provides a low cross polarization dual-band cavity-backed antenna and a wireless communication device, where the antenna utilizes a half-mode technique to reduce the volume of the dual-band antenna, has a good characteristic of low cross polarization, can well reduce interference between systems during communication, and has the characteristics of low profile and small volume, and is easy to integrate with a communication system with a small volume.
The invention aims to provide a low cross polarization dual-frequency cavity-backed antenna.
Another object of the present invention is to provide a wireless communication device.
The purpose of the invention can be achieved by adopting the following technical scheme:
a low cross polarization dual-frequency cavity-backed antenna comprises a dielectric substrate, an upper metal layer, a lower metal layer and a metallized through hole array, wherein the upper metal layer is arranged on the upper surface of the dielectric substrate, the lower metal layer is arranged on the lower surface of the dielectric substrate, the metallized through hole array penetrates through the upper metal layer, the dielectric substrate and the lower metal layer, and the metallized through hole array, the upper metal layer and the lower metal layer jointly enclose a half-mode substrate integrated waveguide cavity; the dielectric substrate and the lower metal layer extend towards one side relative to the upper metal layer, an opening is formed in the extending part of the half-die substrate integrated waveguide cavity, and a gap is formed in one side, close to the opening, of the upper metal layer.
Further, the half-mode substrate integrated waveguide cavity is a U-shaped substrate integrated waveguide cavity.
Furthermore, a coaxial feed input port is arranged on the half-mode substrate integrated waveguide cavity.
Further, the distance between the center of the coaxial feed input port and the transverse part of the metallized through hole array is 3.2 mm-3.4 mm, and the distance between the center of the coaxial feed input port and one of the vertical parts of the metallized through hole array is 3.6 mm-3.8 mm.
Furthermore, the dielectric substrate adopts Rogers RT 5880, the thickness is 1 mm-1.4 mm, the dielectric constant is 2.2, and the loss tangent is 0.0009.
Furthermore, the transverse part of the metallized through hole array is parallel to one long side of the medium substrate, and the two vertical parts of the metallized through hole array are respectively parallel to the two short sides of the medium substrate.
Furthermore, in the metalized through hole array, twelve metalized through holes are arranged on the transverse part, and five metalized through holes are arranged on the two vertical parts.
Furthermore, in the metalized through hole array, the diameter of each metalized through hole is 0.6-1 mm, and the distance between the circle centers of two adjacent metalized through holes is 1.4-1.6 mm.
Furthermore, the length of the dielectric substrate, the length of the upper metal layer and the length of the lower metal layer are 17-18 mm, the width of the upper metal layer is 7-8 mm, and the width of the dielectric substrate and the width of the extension part of the lower metal layer relative to the upper metal layer are 4-8 mm.
Furthermore, the gap is a rectangular gap, the length of the rectangular gap is 10-11 mm, the width of the rectangular gap is 0.6-0.8 mm, and the distance between the rectangular gap and one side of the opening is 0.05-0.15 mm.
The other purpose of the invention can be achieved by adopting the following technical scheme:
a wireless communication device comprises the low cross polarization dual-frequency cavity-backed antenna.
Compared with the prior art, the invention has the following beneficial effects:
the antenna is provided with the upper metal layer and the lower metal layer on the upper surface and the lower surface of the dielectric substrate respectively, the metallized through hole array penetrates through the upper metal layer, the dielectric substrate and the lower metal layer, the metallized through hole array, the upper metal layer and the lower metal layer jointly enclose a half-mode substrate integrated waveguide cavity, and the half-mode substrate integrated waveguide is adopted to realize the dual-frequency antenna, so that the size of the antenna is effectively reduced, and the structure of the antenna is simplified; in addition, the antenna of the invention has very low cross polarization, the cross polarization ratio of the antenna at 9.45GHz and 11.58GHz is respectively larger than 23dB and 26dB, the interference can be effectively reduced in a communication system, and the working efficiency of the system is improved.
Drawings
Fig. 1 is a schematic perspective view of a low cross polarization dual-band cavity-backed antenna according to an embodiment of the present invention.
Fig. 2 is a schematic plane structure diagram of a low cross polarization dual-band cavity-backed antenna according to an embodiment of the present invention.
Fig. 3 is an E-plane radiation field pattern of the low cross-polarization dual-band cavity-backed antenna at 9.45GHz according to the embodiment of the invention.
Fig. 4 is an H-plane radiation field pattern of the low cross-polarization dual-band cavity-backed antenna at 9.45GHz according to the embodiment of the invention.
FIG. 5 is an E-plane radiation field pattern of the low cross-polarization dual-band cavity-backed antenna at 11.58GHz according to the embodiment of the invention
FIG. 6 is an H-plane radiation field pattern of the low cross polarization dual-band cavity-backed antenna at 11.58GHz according to the embodiment of the invention
Fig. 7 is an S-parameter and gain diagram of a low cross-polarization dual-band cavity-backed antenna according to an embodiment of the present invention.
The device comprises a dielectric substrate 1, an upper metal layer 2, a lower metal layer 3, a metallized through hole array 4, a slot 5 and a coaxial feed input port 6.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example (b):
as shown in fig. 1 and fig. 2, this embodiment provides a low cross polarization dual-band cavity-backed antenna, which can be applied to a wireless communication device, and includes a dielectric substrate 1, an upper metal layer 2, a lower metal layer 3, and a metalized through hole array 4, where the upper metal layer 2 covers an upper surface of the dielectric substrate 1, the lower metal layer 3 covers a lower surface of the dielectric substrate 1, the metalized through hole array 4 penetrates through the upper metal layer 2, the dielectric substrate 1, and the lower metal layer 3, and the metalized through hole array 4, the upper metal layer 1, and the lower metal layer 2 together enclose a half-mold substrate integrated waveguide cavity, the dielectric substrate 1 and the lower metal layer 3 extend to one side relative to the upper metal layer 2, the half-mold substrate integrated waveguide cavity forms an opening in the extending portion, and the upper metal layer 2 is provided with a slot 5 on one side.
Seen from the upper surface of the dielectric substrate 1, the metallized through hole array 4 surrounds the edges of the three sides of the upper metal layer 2, and the metallized through hole array 4 can be divided into a horizontal part and two vertical parts, wherein the horizontal part surrounds the upper edge of the upper metal layer 2, one vertical part surrounds the left edge of the upper metal layer 2, and the other vertical part surrounds the right edge of the upper metal layer 2, so that the half-die substrate integrated waveguide cavity is a U-shaped substrate integrated waveguide cavity.
Further, in the metallized through hole array 4, the direction of the transverse portion is set as the X-axis direction, the directions of the two vertical portions are set as the Y-axis direction, the transverse portion is parallel to one of the long sides of the dielectric substrate 1, i.e. the long side is parallel to the X-axis, and the two vertical portions are respectively parallel to the two short sides of the dielectric substrate 1, i.e. the two short sides are parallel to the Y-axis; specifically, twelve of the metallized through holes of the transverse portion and five of the metallized through holes of the two vertical portions.
In this embodiment, the diameter d of each metalized through hole is 0.8mm, and the distance s between the centers of two adjacent metalized through holes is 1.5 mm.
Furthermore, a coaxial feed input Port 6(Port1) is arranged on the half-mode substrate integrated waveguide cavity, the coaxial feed input Port 6 is connected with the 50 Ω coaxial line, independent feed is performed through the 50 Ω coaxial line, electromagnetic waves are excited in the half-mode substrate integrated waveguide cavity, and radiation is performed through the gap 5.
In this embodiment, the spacing Yc between the center of the coaxial feed input port 6 and the lateral portion of the metallized via array 4 is 3.3mm, and the spacing Xc between the center of the coaxial feed input port 6 and the vertical portion to the left of the metallized via array 4 is 3.7 mm.
Further, Rogers RT 5880, which has a rectangular cross-sectional shape, a thickness of 1.2mm, a dielectric constant of 2.2, and a loss tangent of 0.0009, was used as the dielectric substrate 1.
In this embodiment, the lengths of the dielectric substrate 1, the upper metal layer 2, and the lower metal layer 3 are flush with each other, the widths of the dielectric substrate 1 and the lower metal layer 3 are flush with each other, the length Lc of the dielectric substrate 1, the length Lc of the upper metal layer 2, and the width Wc of the upper metal layer 2 are 17.8mm, the width Wt of the extension portion of the dielectric substrate 1 and the lower metal layer 3 with respect to the upper metal layer 2 is 6mm, that is, the width of the dielectric substrate 1 and the width of the lower metal layer 3 are (Wc + Wt) ═ 7.2mm +6mm ═ 13.2 mm.
In this embodiment, the slit 5 is a rectangular slit parallel to the X axis, the length Ls is 10.4mm, the width Ws is 0.6mm, and the distance Wg between the slit 5 and the opening side is 0.1 mm.
In the above embodiment, the metal material used for the upper metal layer 2, the lower metal layer 3 and the metalized via array 4 may be any one of aluminum, iron, tin, copper, silver, gold and platinum, or an alloy of any one of aluminum, iron, tin, copper, silver, gold and platinum; the wireless communication device can be an electronic device such as a mobile phone and a tablet computer.
Fig. 3 and 4 are E-plane and H-plane radiation field patterns of the low cross-polarization dual-band cavity-backed antenna of the present embodiment resonating at 9.45GHz, respectively; fig. 5 and 6 are respectively the E-plane and H-plane radiation field patterns of the low cross-polarization dual-band cavity-backed antenna of this embodiment when resonating at 11.58 GHz; it can be seen that the front-to-back ratios of the low cross polarization dual-band cavity-backed antenna of this embodiment at two frequency points, 9.45GHz and 11.58GHz, are both greater than 10dB, and the cross polarization ratios are greater than 23dB and 26dB, respectively.
Fig. 7 is a graph of the S-parameter and the gain of the low cross-polarization dual-band cavity-backed antenna of this embodiment, the center resonant frequencies of the two pass-bands of the dual-band antenna are respectively 9.45GHz and 11.58GHz, the gains are respectively 4.43dBi and 4.64dBi, and the impedance bandwidths of 10dB are respectively 3.2% and 2.8%.
In summary, the antenna of the present invention has the upper metal layer and the lower metal layer respectively disposed on the upper and lower surfaces of the dielectric substrate, and the metallized through hole array penetrates through the upper metal layer, the dielectric substrate and the lower metal layer, and the metallized through hole array, the upper metal layer and the lower metal layer together enclose a half-die substrate integrated waveguide cavity, and a half-die substrate integrated waveguide is adopted to implement a dual-frequency antenna, thereby effectively reducing the size of the antenna and simplifying the structure of the antenna; in addition, the antenna of the invention has very low cross polarization, the cross polarization ratio of the antenna at 9.45GHz and 11.58GHz is respectively larger than 23dB and 26dB, the interference can be effectively reduced in a communication system, and the working efficiency of the system is improved.
The above description is only for the preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution and the inventive concept of the present invention within the scope of the present invention.
Claims (10)
1. A low cross polarization dual-band cavity backed antenna, characterized in that: the waveguide comprises a medium substrate, an upper metal layer, a lower metal layer and a metalized through hole array, wherein the upper metal layer is arranged on the upper surface of the medium substrate, the lower metal layer is arranged on the lower surface of the medium substrate, the metalized through hole array penetrates through the upper metal layer, the medium substrate and the lower metal layer, and the metalized through hole array, the upper metal layer and the lower metal layer jointly enclose a half-die substrate integrated waveguide cavity; the dielectric substrate and the lower metal layer extend towards one side relative to the upper metal layer, an opening is formed in the extending part of the half-die substrate integrated waveguide cavity, and a gap is formed in one side, close to the opening, of the upper metal layer.
2. The low cross-polarization dual-frequency cavity-backed antenna of claim 1, wherein: the half-mode substrate integrated waveguide cavity is a U-shaped substrate integrated waveguide cavity.
3. The low cross-polarization dual-frequency cavity-backed antenna of claim 1, wherein: and a coaxial feed input port is arranged on the half-mode substrate integrated waveguide cavity.
4. The low cross-polarization dual-frequency cavity-backed antenna of claim 3, wherein: the distance between the center of the coaxial feed input port and the transverse part of the metallized through hole array is 3.2-3.4 mm, and the distance between the center of the coaxial feed input port and one of the vertical parts of the metallized through hole array is 3.6-3.8 mm.
5. The low cross-polarization dual-frequency cavity-backed antenna according to any one of claims 1 to 4, wherein: the transverse part of the metallized through hole array is parallel to one long side of the medium substrate, and the two vertical parts of the metallized through hole array are respectively parallel to the two short sides of the medium substrate.
6. The low cross-polarization dual-frequency cavity-backed antenna according to any one of claims 1 to 4, wherein: in the metalized through hole array, twelve metalized through holes are arranged on the transverse part, and five metalized through holes are arranged on the two vertical parts.
7. The low cross-polarization dual-frequency cavity-backed antenna of claim 6, wherein: in the metalized through hole array, the diameter of each metalized through hole is 0.6-1 mm, and the distance between the circle centers of two adjacent metalized through holes is 1.4-1.6 mm.
8. The low cross-polarization dual-frequency cavity-backed antenna according to any one of claims 1 to 4, wherein: the length of the medium substrate, the length of the upper metal layer and the length of the lower metal layer are 17-18 mm, the width of the upper metal layer is 7-8 mm, and the width of the medium substrate and the width of the extension part of the lower metal layer relative to the upper metal layer are 4-8 mm.
9. The low cross-polarization dual-frequency cavity-backed antenna according to any one of claims 1 to 4, wherein: the gap is a rectangular gap, the length of the rectangular gap is 10-11 mm, the width of the rectangular gap is 0.6-0.8 mm, and the distance between the rectangular gap and one side of the opening is 0.05-0.15 mm.
10. A wireless communication device, characterized by: comprising a low cross-polarization dual-frequency cavity-backed antenna according to any of claims 1 to 9.
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Cited By (1)
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CN112134013A (en) * | 2020-11-23 | 2020-12-25 | 电子科技大学 | Broadband dual-polarization phased array antenna based on medium integration cavity |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112134013A (en) * | 2020-11-23 | 2020-12-25 | 电子科技大学 | Broadband dual-polarization phased array antenna based on medium integration cavity |
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